TW201349567A - 發光元件及其製造方法 - Google Patents
發光元件及其製造方法 Download PDFInfo
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- TW201349567A TW201349567A TW102106144A TW102106144A TW201349567A TW 201349567 A TW201349567 A TW 201349567A TW 102106144 A TW102106144 A TW 102106144A TW 102106144 A TW102106144 A TW 102106144A TW 201349567 A TW201349567 A TW 201349567A
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- TW
- Taiwan
- Prior art keywords
- zno
- light
- layer
- fine particles
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011859 microparticle Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000005245 sintering Methods 0.000 claims abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 342
- 239000010419 fine particle Substances 0.000 claims description 173
- 239000011787 zinc oxide Substances 0.000 claims description 168
- 238000000034 method Methods 0.000 claims description 30
- 239000002245 particle Substances 0.000 claims description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 238000010298 pulverizing process Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 35
- 239000010409 thin film Substances 0.000 abstract description 25
- 239000010410 layer Substances 0.000 description 119
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010891 electric arc Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001748 luminescence spectrum Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- -1 or the like Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021474 group 7 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005453 pelletization Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H01L33/28—
-
- H01L33/0087—
-
- H01L33/18—
-
- H01L33/26—
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012037567 | 2012-02-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201349567A true TW201349567A (zh) | 2013-12-01 |
Family
ID=49005893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102106144A TW201349567A (zh) | 2012-02-23 | 2013-02-22 | 發光元件及其製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6004404B2 (ja) |
TW (1) | TW201349567A (ja) |
WO (1) | WO2013125719A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7470361B2 (ja) * | 2020-01-16 | 2024-04-18 | 株式会社S-Nanotech Co-Creation | 光電変換素子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4470237B2 (ja) * | 1998-07-23 | 2010-06-02 | ソニー株式会社 | 発光素子,発光装置および表示装置並びに発光素子の製造方法 |
JP2000244015A (ja) * | 1999-02-23 | 2000-09-08 | Murata Mfg Co Ltd | 発光素子 |
JP2001210865A (ja) * | 2000-01-22 | 2001-08-03 | Sony Corp | 発光素子およびその製造方法 |
JP5277430B2 (ja) * | 2007-03-29 | 2013-08-28 | 国立大学法人島根大学 | 酸化亜鉛系発光素子 |
-
2013
- 2013-02-22 TW TW102106144A patent/TW201349567A/zh unknown
- 2013-02-25 WO PCT/JP2013/054702 patent/WO2013125719A1/ja active Application Filing
- 2013-02-25 JP JP2014500969A patent/JP6004404B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2013125719A1 (ja) | 2013-08-29 |
JP6004404B2 (ja) | 2016-10-12 |
JPWO2013125719A1 (ja) | 2015-07-30 |
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