TW201335070A - 阻擋層形成用組成物、阻擋層、太陽電池用基板的製造方法以及太陽電池元件的製造方法 - Google Patents

阻擋層形成用組成物、阻擋層、太陽電池用基板的製造方法以及太陽電池元件的製造方法 Download PDF

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Publication number
TW201335070A
TW201335070A TW102100934A TW102100934A TW201335070A TW 201335070 A TW201335070 A TW 201335070A TW 102100934 A TW102100934 A TW 102100934A TW 102100934 A TW102100934 A TW 102100934A TW 201335070 A TW201335070 A TW 201335070A
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TW
Taiwan
Prior art keywords
barrier layer
forming
composition
metal
group
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TW102100934A
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English (en)
Chinese (zh)
Inventor
Akihiro Orita
Masato Yoshida
Takeshi Nojiri
Yasushi Kurata
Mitsunori Iwamuro
Shigeru Nobe
Yuuhei Okada
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Hitachi Chemical Co Ltd
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Publication of TW201335070A publication Critical patent/TW201335070A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
TW102100934A 2012-01-10 2013-01-10 阻擋層形成用組成物、阻擋層、太陽電池用基板的製造方法以及太陽電池元件的製造方法 TW201335070A (zh)

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Application Number Priority Date Filing Date Title
JP2012002633 2012-01-10

Publications (1)

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TW201335070A true TW201335070A (zh) 2013-09-01

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TW102100934A TW201335070A (zh) 2012-01-10 2013-01-10 阻擋層形成用組成物、阻擋層、太陽電池用基板的製造方法以及太陽電池元件的製造方法
TW102100925A TW201339248A (zh) 2012-01-10 2013-01-10 遮罩形成用組成物、太陽電池用基板的製造方法以及太陽電池元件的製造方法

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JP (4) JP5339012B1 (ja)
CN (2) CN104319296A (ja)
TW (2) TW201335070A (ja)
WO (2) WO2013105603A1 (ja)

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WO2013105603A1 (ja) * 2012-01-10 2013-07-18 日立化成株式会社 バリア層形成用組成物、バリア層、太陽電池用基板の製造方法及び太陽電池素子の製造方法
JP5567163B2 (ja) * 2012-01-26 2014-08-06 日本合成化学工業株式会社 拡散防止層形成用塗布液およびそれを用いたドーパント拡散層付き半導体基板の製法、並びに太陽電池の製法
JP6105978B2 (ja) * 2013-03-08 2017-03-29 日産化学工業株式会社 半導体ウェハの不純物熱拡散処理プロセス
KR102124920B1 (ko) * 2013-08-02 2020-06-19 도레이 카부시키가이샤 마스크 페이스트 조성물, 이것을 사용해서 얻어지는 반도체 소자 및 반도체 소자의 제조 방법
CN103646991A (zh) * 2013-11-28 2014-03-19 奥特斯维能源（太仓）有限公司 P型晶体硅双面电池的制备方法
CN103646992A (zh) * 2013-11-28 2014-03-19 奥特斯维能源（太仓）有限公司 一种p型晶体硅双面电池的制备方法
KR20180118609A (ko) * 2016-02-25 2018-10-31 데이진 가부시키가이샤 이온 주입 마스크 형성용 분산체, 이온 주입 마스크의 형성 방법 및 반도체 디바이스 제조 방법
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TW201800415A (zh) * 2016-06-28 2018-01-01 日立化成股份有限公司 鈍化層形成用組成物、帶鈍化層的半導體基板、帶鈍化層的半導體基板的製造方法、太陽電池元件、太陽電池元件的製造方法以及太陽電池
CN111403537B (zh) * 2018-12-27 2021-05-25 江苏日托光伏科技股份有限公司 一种基于碱抛的选择性发射极电池正面保护方法

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WO2013105603A1 (ja) * 2012-01-10 2013-07-18 日立化成株式会社 バリア層形成用組成物、バリア層、太陽電池用基板の製造方法及び太陽電池素子の製造方法

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Publication number Publication date
JP5339011B1 (ja) 2013-11-13
WO2013105603A1 (ja) 2013-07-18
WO2013105601A1 (ja) 2013-07-18
CN104067395A (zh) 2014-09-24
JP2013168677A (ja) 2013-08-29
JP2013219372A (ja) 2013-10-24
JP5339012B1 (ja) 2013-11-13
TW201339248A (zh) 2013-10-01
JPWO2013105601A1 (ja) 2015-05-11
CN104319296A (zh) 2015-01-28
JPWO2013105603A1 (ja) 2015-05-11

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