TW201334047A - Die ejecting method, die ejecting unit, die pick-up method, and die pick-up apparatus - Google Patents
Die ejecting method, die ejecting unit, die pick-up method, and die pick-up apparatus Download PDFInfo
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- TW201334047A TW201334047A TW101109790A TW101109790A TW201334047A TW 201334047 A TW201334047 A TW 201334047A TW 101109790 A TW101109790 A TW 101109790A TW 101109790 A TW101109790 A TW 101109790A TW 201334047 A TW201334047 A TW 201334047A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/756—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/75611—Feeding means
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Abstract
Description
本發明提供一種晶粒頂出方法、一種晶粒頂出單元、一種晶粒頂取方法及一種晶粒頂取裝置。更特別的是,本發明係有關於自切割膠帶頂出一晶粒之一種晶粒頂出方法,晶圓所分割成複數晶粒之一晶圓係附著於一切割膠帶,一種晶粒頂出單元用於實現前述方法,一種晶粒頂取方法用於自切割膠帶拿取晶粒,並且一種晶粒頂取裝置包括晶粒頂出單元及用於自切割膠帶拿取晶粒。 The invention provides a die ejection method, a die ejector unit, a die topping method and a die plucking device. More particularly, the present invention relates to a method for ejecting a die from a dicing tape, wherein the wafer is divided into a plurality of dies, and the wafer is attached to a dicing tape, and a die is ejected. The unit is used to implement the foregoing method, a die topping method for picking up the die from the dicing tape, and a die ejector device comprising a die ejector unit and for taking the die from the dicing tape.
一般而言,藉由重覆執行一連續製造程序可將半導體裝置係形成於用以做為一半導體基底之一矽晶圓上。隨後,經由一切割程序可對於半導體裝置進行分割,並且經由一晶粒結合製程將半導體裝置結合至一基底上。 In general, a semiconductor device can be formed on a wafer as a semiconductor substrate by repeatedly performing a continuous manufacturing process. Subsequently, the semiconductor device can be divided via a dicing process, and the semiconductor device is bonded to a substrate via a die bonding process.
用於執行晶粒結合製程之一裝置可包括一晶粒結合裝置,此晶粒結合裝置用於晶圓所分割成複數晶粒之一晶圓中拿取一晶粒而將所選晶粒附著於一基底。晶粒結合裝置可包括一平台單元、一晶粒頂出單元及一頂取單元,其中,平台單元係用於支承晶圓所附著之一晶圓環,晶粒頂出單元係垂直地移動而選擇性地將一晶粒分離於平台單元所支承之晶圓,頂取單元係用於自晶圓拿取晶粒。 The apparatus for performing a die bonding process may include a die bonding device for dividing a wafer into a plurality of dies to take a die and attach the selected die On a substrate. The die bonding device can include a platform unit, a die ejector unit, and a ejector unit, wherein the platform unit is configured to support one of the wafer rings attached to the wafer, and the die ejector unit moves vertically A die is selectively separated from the wafer supported by the platform unit, and the top take-up unit is used to take the die from the wafer.
於晶粒頂出單元中,當晶粒厚度逐漸減少時,包含於晶粒頂出單元中之一頂出銷係實際上接觸於晶粒,如此對 於晶粒造成一物理衝擊。因此,例如可能於晶粒產生破裂之損壞將造成晶粒之誤差。 In the die ejector unit, when the grain thickness is gradually reduced, one of the ejector pins included in the die ejector unit is actually in contact with the die, so A physical impact is caused on the grains. Therefore, for example, damage that may occur in the rupture of the crystal grains will cause an error in the crystal grains.
本發明提供可防止一晶粒產生衝擊之一晶粒頂出方法。 The present invention provides a method of crystallizing the crystal which can prevent the impact of a grain.
本發明亦提供可防止一晶粒產生衝擊之一晶粒頂出單元。 The present invention also provides a die ejector unit that prevents a grain from being impacted.
本發明亦提供可防止一晶粒產生衝擊之一晶粒頂取方法。 The present invention also provides a method of crystal grain picking which can prevent the impact of a grain.
本發明亦提供可防止一晶粒產生衝擊之一晶粒頂取裝置。 The present invention also provides a die ejector device that prevents the impact of a grain.
依照一示範實施例,一晶粒頂出方法包括:整體而論向下真空吸附一切割膠帶,一晶圓所分割成具有一邊緣區域及一中心區域之至少一晶粒係附著於切割膠帶;相對於其它區域下將對應於晶粒之邊緣區域之切割膠帶之一第一區域進行相對地升高;以及吹送空氣至對應於晶粒之中心區域之切割膠帶之一第二區域之上以利用一空氣流將晶粒分離於切割膠帶。 According to an exemplary embodiment, a die ejector method includes: vacuum-adsorbing a dicing tape as a whole, wherein a wafer is divided into at least one die having an edge region and a central region attached to the dicing tape; Relatively raising a first region of one of the dicing tapes corresponding to the edge regions of the dies relative to the other regions; and blowing air to a second region of one of the dicing tapes corresponding to the central region of the dies to utilize An air stream separates the grains from the dicing tape.
空氣之吹送包括對於具有自切割膠帶之第二區域之一中心朝向外側壓力漸增之空氣進行供應。 Air blowing includes supplying air with increasing pressure toward the outside of the center of the second region of the self-cutting tape.
相對於其它區域下對切割膠帶之第一區域之相對地升高可包括關閉切割膠帶之第二區域以形成一封閉區域以導引空氣流。 Relatively raising the first region of the dicing tape relative to other regions may include closing the second region of the dicing tape to form a closed region to direct air flow.
相對於其它區域下對切割膠帶之第一區域之相對地升高係可利用具有一流體通道之一升降元件而執行,具有一向上漸增直徑之流體通道用以導引空氣流。 The relative elevation of the first region of the dicing tape relative to the other regions can be performed using a lifting element having a fluid passageway having an upwardly increasing diameter fluid passage for directing air flow.
依照另一示範實施例,一晶粒頂出單元係設置用於自一切割膠帶頂出一晶粒,位於切割膠帶之一晶圓所分割成具有一邊緣區域及一中心區域之至少一晶粒。晶粒頂出單元包括一本體、一升降元件及一空氣吹送件。整體而論,本體包括一空心及一吸附孔,空心之形狀係對應於晶粒之形狀,吸附孔配置用於真空吸附切割膠帶。升降元件係垂直移動設置於本體之空心中且內具有一流體通道。升降元件係配置用於升高對應於晶粒之邊緣區域之切割膠帶之一第一區域。空氣吹送件係配置用於經由升降元件之流體通道將空氣吹送至對應於晶粒之中心區域之切割膠帶之一第二區域之上。 According to another exemplary embodiment, a die ejector unit is provided for ejecting a die from a dicing tape, and the wafer at one of the dicing tapes is divided into at least one die having an edge region and a central region. . The die ejector unit includes a body, a lifting element and an air blowing member. In general, the body includes a hollow and an adsorption hole, the shape of the hollow corresponds to the shape of the crystal grain, and the adsorption hole is configured for vacuum adsorption of the cutting tape. The lifting element is vertically disposed in the hollow of the body and has a fluid passage therein. The lifting element is configured to raise a first region of the cutting tape corresponding to an edge region of the die. The air blowing member is configured to blow air over the second region of one of the cutting tapes corresponding to a central region of the die via a fluid passage of the lifting member.
升降元件之流體通道可包括一向上漸增直徑。 The fluid passage of the lifting element can include an upwardly increasing diameter.
空氣吹送件更可包括一空氣供應來源及一空氣供應線路,空氣供應來源係配置用於供應空氣至升降元件之流體通道中,空氣供應線路係配置用於允許升降元件之流體通道及空氣供應來源相互連通。於此,晶粒頂出單元更可包括一真空吸附件,真空吸附件配置用於經由升降元件之流體通道以吸附切割膠帶,其中,真空吸附件包括一真空吸附線路及一真空吸附來源,真空吸附線路係分支於空氣供應線路,真空吸附來源係連通於真空吸附線路,真空吸附線路係配置用於經由升降元件之流體通道吸附切割膠帶之 第二區域。 The air blowing member may further comprise an air supply source and an air supply line configured to supply air to the fluid passage of the lifting element, the air supply line being configured to allow the fluid passage and the air supply source of the lifting element Connected to each other. Wherein, the die ejector unit further comprises a vacuum absorbing member configured to adsorb the dicing tape via the fluid passage of the lifting member, wherein the vacuum absorbing member comprises a vacuum absorbing line and a vacuum absorbing source, and the vacuum The adsorption line is branched from the air supply line, the vacuum adsorption source is connected to the vacuum adsorption line, and the vacuum adsorption line is configured to adsorb the cutting tape through the fluid passage of the lifting element. Second area.
本體之吸附孔可具有一環形狀。 The adsorption hole of the body may have a ring shape.
依照另一示範實施例,一晶粒頂取方法包括:支承一切割膠帶,位於切割膠帶之一晶圓所分割成具有一邊緣區域及一中心區域之至少一晶粒;向上真空吸附晶粒;整體而論向下真空吸附切割膠帶;相對於其它區域下將對應於晶粒之邊緣區域之切割膠帶之一第一區域進行相對地升高;吹送空氣至對應於晶粒之中心區域之切割膠帶之一第二區域之上以利用一空氣流將晶粒分離於切割膠帶;以及自切割膠帶拿取晶粒。於此,空氣之吹送包括對於具有自切割膠帶之第二區域之一中心朝向外側壓力漸增之空氣進行供應。 According to another exemplary embodiment, a die topping method includes: supporting a dicing tape, wherein one of the dicing tapes is divided into at least one die having an edge region and a central region; and vacuum absorbing the die upward; In general, vacuum-cutting the dicing tape; relatively raising a first region of one of the dicing tapes corresponding to the edge regions of the dies relative to other regions; blowing air to the dicing tape corresponding to the central region of the dies One of the second regions is used to separate the die from the dicing tape using an air stream; and the die is taken from the dicing tape. Here, the blowing of air includes supplying air having an increasing pressure toward the outside of the center of the second region of the self-cut tape.
此外,整體而論向下真空吸附切割膠帶是在向上吸附晶粒之後執行。 Further, the vacuum suction dicing tape as a whole is performed after the crystal grains are adsorbed upward.
依照再一示範實施例,一晶粒頂取裝置包括一平台單元、一晶粒頂出單元及一頂取單元。平台單元係配置用於支承一切割膠帶及一晶圓環,位於切割膠帶之一晶圓所分割成複數晶粒,切割膠帶係附著於晶圓環。晶粒頂出單元係設置在藉由平台單元所支承之晶圓下方,晶粒頂出單元係可垂直地移動以選擇性地將複數晶粒分離於切割膠帶。頂取單元係配置用於對藉由晶粒頂出單元所選至少一晶粒進行拿取。晶粒頂出單元包括一本體、一升降元件及一空氣吹送件,其中,整體而論本體包括一空心及一吸附孔,空心之形狀係對應於晶粒之形狀,吸附孔配置用於真空吸 附切割膠帶,升降元件係垂直移動設置於本體之空心中且內具有一流體通道;升降元件係配置用於升高對應於晶粒之邊緣區域之切割膠帶之一第一區域;空氣吹送件係配置用於經由升降元件之流體通道將空氣吹送至對應於晶粒之中心區域之切割膠帶之一第二區域之上。 According to still another exemplary embodiment, a die ejector device includes a platform unit, a die ejector unit, and a ejector unit. The platform unit is configured to support a dicing tape and a wafer ring, and the wafer is cut into a plurality of dies on one of the dicing tapes, and the dicing tape is attached to the wafer ring. The die ejector unit is disposed under the wafer supported by the platform unit, and the die ejector unit is vertically movable to selectively separate the plurality of dies from the dicing tape. The ejector unit is configured to take at least one die selected by the die ejector unit. The die ejector unit comprises a body, a lifting element and an air blowing member, wherein the overall body comprises a hollow and an adsorption hole, the hollow shape corresponds to the shape of the die, and the adsorption hole is configured for vacuum suction. Attaching a cutting tape, the lifting element is vertically disposed in the hollow of the body and has a fluid passage therein; the lifting element is configured to raise a first region of the cutting tape corresponding to the edge region of the die; the air blowing component is A fluid passageway through the lifting element is configured to blow air over a second region of one of the cutting tapes corresponding to a central region of the die.
以下將配合所附圖式針對本發明所示之實施例進行詳述如下。然而,本發明可採用多種不同形式具體化且不應被解釋為受限於此所提出之實施例。更確切地說,利用所提供實施例使得本發明揭露詳細及完整且將本發明之範圍完全地表達給任何熟習此項技藝者。為清楚表示,圖式中之層次及區域之尺寸及相對尺寸可採用增大方式進行說明。 The embodiments shown in the present invention will be described in detail below with reference to the accompanying drawings. However, the invention may be embodied in many different forms and should not be construed as being limited to the embodiments. Rather, the invention is to be considered as illustrative and complete and the scope of the invention is fully disclosed to those skilled in the art. For the sake of clarity, the dimensions and relative dimensions of the layers and regions in the drawings may be described in an enlarged manner.
應當理解的是,當稱一元件或層係“位在”另一元件或層“之上(on)”或“連接至”另一元件或層時,元件或層係可直接位在另一元件或層上或直接連接至另一元件或層,或是可能以介於元件或層間呈現。相反地,當稱一元件係“直接位在”或另一元件或層“之上(directly on)”或“直接連接至”另一元件或層時則不會出現介於元件或層間呈現。全文中之同樣的參考符號係指同樣的元件。於其中所使用之“及/或(and/or)”一詞包括一或更多相關所例項目之任何及所有組合。 It will be understood that when an element or layer is "on" or "on" or "connected" to another element or layer, the element or layer can be Elements or layers may be directly connected to another element or layer, or may be presented between elements or layers. In contrast, when an element is referred to as “directly on,” or “directly on,” or “directly connected to,” or “directly connected to” another element or layer. The same reference symbols in the text refer to the same elements. The term "and/or" as used herein includes any and all combinations of one or more of the associated items.
應當理解的是,雖然於此所使用之第一、第二、第三 等用詞來描述各種元件、構件、區域、層及/或段,但這些元件、構件、區域、層及/或段不因此而受限於這些用詞。這些用詞僅是用於將一元件、構件、區域、層或段區分於另一區域、層或段。因此,在不脫離本發明之教導下,以下所討論之一第一元件、一第一構件、一第一區域、一第一層或一第一段可稱為一第二元件、一第二構件、一第二區域、一第二層或一第二段。 It should be understood that although the first, second, and third are used herein Or <RTI ID=0.0>>>""""""" These terms are only used to distinguish one element, component, region, layer or segment to another region, layer or segment. Therefore, one of the first elements, a first member, a first region, a first layer, or a first segment discussed below may be referred to as a second component, a second component, without departing from the teachings of the present invention. a member, a second region, a second layer, or a second segment.
於此所使用之例如“較低的(lower)”、“較高的(upper)”及其類似之空間相對用詞係針對圖式所描繪之一元件或特徵與另一元件或特徵之關係進行易於敘述之說明。應當理解的是,除了在圖式中所描繪之方位,空間相關用詞是用以包含使用或操作中之裝置之不同方位。舉例而言,如果對於圖式中之裝置進行翻轉,描述為“在”其它元件“下面(below)”或“在”其它元件“之下(beneath)”之元件及或特徵於是便定向為“在”其它元件“上面(above)”或特徵。因此,例子中之“在下面(below)”可包含在上面及在下面之方位。裝置可採用別種方法進行定向(轉動90度或以其它方位進行轉動),並且依照於此所使用之空間相對描述符號進行說明。 The terms "lower", "upper", and the like, as used herein, are used to refer to one of the elements or features depicted in the drawings. Make an easy-to-narrative description. It will be understood that the spatially relative terms are used to encompass different orientations of the device in use or operation. For example, elements and/or features that are described as "below" or "beneath" other elements in the <RTIgt; "above" or feature in "other elements." Therefore, the "below" in the examples may be included above and below. The device may be oriented (rotated 90 degrees or rotated in other orientations) by other methods and described in relation to the spatially relative descriptive symbols used herein.
於此所使用之專用術語之目的僅在於用於說明特定實施例且並非用於限定本發明。除非在內文中以別種方法清楚地說明,於此所使用之單數型式“一(a)”、“一(an)”and“這(the)”係同樣地包括複數型式。應當更理解的是,於說明書中所使用之用詞“包括(comprises)”及/或 “包括(comprising,)”詳細指明所述特徵、完整的事物、步驟、操作、元件及/或組件之存在,但不排除一或更多其它特徵、完整的事物、步驟、操作、元件、組件及/或其群組之存在或增加。 The specific terminology used herein is for the purpose of illustration and description The singular forms "a", "an", and "the" are used in the <RTI ID=0.0> </ RTI> </ RTI> <RTIgt; It should be further understood that the terms "comprises" and/or are used in the specification. "Comprising" is used to indicate the existence of the described features, the details, the steps, the operations, the components and/or components, but does not exclude one or more other features, complete things, steps, operations, components, components And/or the existence or addition of its group.
除非採用別種方法對於用詞進行定義,否則於此所使用之所有用詞(包括技術及科學用詞)是具有如同本發明所屬之技藝中之任何熟習者所共同理解的意義。應當更理解的是,除非於此對於這些用詞明確地進行定義,這些在所共同使用字典中所定義之用詞的意義係應解釋為與其相關技藝之內容中之意義是一致的,並且這些用詞不應被解釋為一種具有理想或過度正式之意義。 All terms used herein, including technical and scientific terms, have the meaning as commonly understood by one of ordinary skill in the art to which the invention pertains, unless otherwise defined. It should be understood that unless the terms are explicitly defined herein, the meaning of the terms defined in the commonly used dictionary should be interpreted as being consistent with the meaning of the content of the related art, and these Words should not be interpreted as having an ideal or overly formal meaning.
於此所述之本發明之示範實施例是參照剖面圖示,這些剖面圖示係為本發明之理想實施例(及中間結構)之示意圖示。舉例而言,就示範實施例其本身而論,由於製造技術及/或公差造成圖示之形狀產生變化是可預期的。因此,於此處圖解之本發明之示範實施例不應被解釋為受限於區域之特定形狀,而是包括了製造結果之形狀的變化。本質上,於圖示中所圖解之區域及其形狀非用於圖解一裝置之一區域之真實形狀且非用於限制本發明之範圍。 The exemplary embodiments of the present invention are described herein with reference to the accompanying drawings, which are schematic representations of the preferred embodiments (and intermediate structures) of the invention. For example, variations in the shapes of the illustrations as a result of manufacturing techniques and/or tolerances are contemplated as far as the exemplary embodiments are concerned. Accordingly, the exemplary embodiments of the invention, as illustrated herein, are not to be construed as limited In essence, the regions illustrated in the figures and their shapes are not intended to illustrate the true shape of one of the regions of the device and are not intended to limit the scope of the invention.
第1圖係為根據一示範實施例說明一晶粒頂出方法之一流程圖。 1 is a flow chart illustrating a method of die ejecting according to an exemplary embodiment.
請參閱第1圖,於根據一示範實施例之一晶粒頂出方法中,一晶圓所分割成複數晶粒之一晶圓係附著於一切割膠帶,於操作S110中之切割膠帶係向下真空吸附。因此, 整體而論是對於切割膠帶進行平坦吸附。舉例而言,整體而論,為了執行真空吸附製程(S110),切割膠帶下方所定義之一吸附孔周圍的空氣可經引入通過吸附孔,如此可將切割膠帶吸附在具有吸附孔之一本體上。請參閱第4圖,各晶粒具有一邊緣區域及一中心區域。 Referring to FIG. 1 , in a die ejector method according to an exemplary embodiment, a wafer is divided into a plurality of dies, and a wafer is attached to a dicing tape, and the dicing tape is oriented in operation S110. Vacuum adsorption. therefore, Overall, it is a flat adsorption of the dicing tape. For example, as a whole, in order to perform the vacuum adsorption process (S110), air around one of the adsorption holes defined under the dicing tape may be introduced through the adsorption hole, so that the dicing tape may be adsorbed on one body having the adsorption hole. . Referring to FIG. 4, each of the crystal grains has an edge region and a central region.
於操作S120中,相對於其它區域下將對應於晶粒之邊緣區域之切割膠帶之一第一區域進行相對地升高。舉例而言,切割膠帶之第一區域具有一封閉帶形狀。因此,晶粒之邊緣區域可局部地分離於切割膠帶。 In operation S120, a first region of one of the dicing tapes corresponding to the edge regions of the dies is relatively raised relative to the other regions. For example, the first region of the dicing tape has a closed band shape. Therefore, the edge regions of the grains can be partially separated from the dicing tape.
於一示範實施例中,為了升高切割膠帶之第一區域,則對於設置在切割膠帶之第一區域下方之一升降元件進行升高。於此,當升高升降元件時,應力係局部地集中於切割膠帶之第一區域。以下將針對升降元件進行詳述。 In an exemplary embodiment, to raise the first region of the dicing tape, one of the lifting elements disposed below the first region of the dicing tape is raised. Here, when the lifting element is raised, the stress is locally concentrated on the first region of the dicing tape. The lifting element will be described in detail below.
於操作S130中,將空氣吹送至對應於晶粒之中心區域之切割膠帶之一第二區域之上以利用一空氣流將晶粒分離於切割膠帶。那就是在操作S120中,晶粒之邊緣區域係可局部地分離於切割膠帶,並且隨後將空氣吹送至切割膠帶之第二區域之上,如此將第二區域分離於切割膠帶。 In operation S130, air is blown onto a second region of one of the dicing tapes corresponding to a central region of the die to separate the die from the dicing tape with an air flow. That is, in operation S120, the edge region of the die is partially separable from the dicing tape, and then air is blown onto the second region of the dicing tape, thus separating the second region from the dicing tape.
依照一示範實施例之空氣吹送程序,一空氣壓力可由切割膠帶之第二區域之一中心朝向其外側而漸增。因此,切割膠帶之鄰接於第一區域之第二區域之最外部分係可先分離於切割膠帶。相繼地,晶粒係自切割膠帶朝向第二區域之中心而連續地分離。 According to the air blowing program of an exemplary embodiment, an air pressure may be gradually increased from the center of one of the second regions of the dicing tape toward the outer side thereof. Thus, the outermost portion of the dicing tape adjacent the second region of the first region can be separated from the dicing tape first. Successively, the die is continuously separated from the dicing tape towards the center of the second zone.
集中於切割膠帶之第一區域之應力可藉由供應朝向於 第二區域之最外部分之具有最高壓力之空氣而分散。因此,可避免於晶粒內產生破裂的情況。 Focusing on the first region of the dicing tape can be biased by the supply The outermost portion of the second region is dispersed by the air having the highest pressure. Therefore, it is possible to avoid the occurrence of cracks in the crystal grains.
於一示範實施例中,當升高升降元件時,升降元件可關閉切割膠帶之第二區域而形成用於導引空氣流之一流體通道。那就是當相對於切割膠帶之其它區域下對於切割膠帶之一第一區域進行相對地升高時,升降元件之內側壁及切割膠帶之第二區域可形成一封閉區域。在後續空氣吹送程序(S130)中可利用封閉區域對於空氣流進行導引。 In an exemplary embodiment, when the lifting element is raised, the lifting element can close the second region of the cutting tape to form a fluid passage for directing air flow. That is, when the first region of one of the dicing tapes is relatively raised relative to other regions of the dicing tape, the inner side wall of the lifting member and the second region of the dicing tape may form a closed region. The enclosed area can be used to guide the air flow in a subsequent air blowing procedure (S130).
於一示範實施例中,具有一向上漸增直徑之用以導引空氣流之一流體通道可形成於升降元件中。因此,當供應至切割膠帶之整體表面之空氣抵達封閉區域之最上位置時,於切割膠帶之第二區域之最外部分產生一相對高壓力。因此,切割膠帶之鄰接於第一區域之第二區域之最外部分可先分離於切割膠帶。 In an exemplary embodiment, a fluid passageway having an upwardly increasing diameter for directing air flow may be formed in the lifting element. Therefore, when the air supplied to the entire surface of the dicing tape reaches the uppermost position of the closed region, a relatively high pressure is generated at the outermost portion of the second region of the dicing tape. Thus, the outermost portion of the dicing tape adjacent the second region of the first region may be first separated from the dicing tape.
依照一示範實施例之晶粒頂出方法,對應於晶粒之邊緣區域之切割膠帶之第一區域係可相對於其它區域進行相對地升高而局部地將晶粒之邊緣區域分離於切割膠帶。隨後,空氣吹送程序係可在對應於晶粒之中心區域之切割膠帶之第二區域之上執行,如此將晶粒之中心區域分離於切割膠帶。因此,在不需物理接觸下可將晶粒之中心區域分離於切割膠帶。此外,空氣吹送程序係可在切割膠帶之第二區域之上執行以分散集中在晶粒之第一區域之應力。因此,可避免於切割膠帶之第一區域內產生破裂的情況。 According to the die ejecting method of an exemplary embodiment, the first region of the dicing tape corresponding to the edge region of the die can be relatively raised relative to the other regions to locally separate the edge regions of the die from the dicing tape. . Subsequently, the air blowing process can be performed over the second region of the dicing tape corresponding to the central region of the die, thus separating the central region of the die from the dicing tape. Thus, the central region of the die can be separated from the dicing tape without physical contact. Additionally, an air blowing process can be performed over the second region of the dicing tape to disperse the stress concentrated in the first region of the die. Therefore, it is possible to avoid the occurrence of cracks in the first region of the dicing tape.
第2圖表示依照一示範實施例之一晶粒頂出單元之一 剖面圖。第3圖表示第2圖之晶粒頂出單元之一平面圖。第4圖表示第2圖之一晶粒之一平面圖。 Figure 2 shows one of the die ejector units in accordance with an exemplary embodiment. Sectional view. Fig. 3 is a plan view showing one of the die ejecting units of Fig. 2. Figure 4 is a plan view showing one of the crystal grains of Fig. 2.
請參閱第2、3、4圖,依照一示範實施例之一晶粒頂出單元100包括一本體110、一升降元件130及一空氣吹送件150。晶粒頂出單元100係設置於一切割膠帶20下方,晶圓所分割成複數晶粒10之晶圓係附著於切割膠帶20。晶粒頂出單元100係選擇性地將各晶粒10分離於切割膠帶20。晶粒10可藉由一邊緣區域11及邊緣區域11所圍繞之一中心區域15所分隔。 Referring to FIGS. 2, 3, and 4, a die ejector unit 100 includes a body 110, a lifting element 130, and an air blowing member 150, in accordance with an exemplary embodiment. The die ejector unit 100 is disposed under a dicing tape 20, and the wafer in which the wafer is divided into the plurality of dies 10 is attached to the dicing tape 20. The die ejector unit 100 selectively separates the dies 10 from the dicing tape 20. The die 10 can be separated by a central region 15 surrounded by an edge region 11 and an edge region 11.
晶粒頂出單元100之本體110係設置於切割膠帶20下方。具體地,晶粒頂出單元100之本體110係設置於所選晶粒10下方。於本體110中係垂直地定義一空心113,空心113之形狀對應於晶粒10之形狀。升降元件130係垂直可移動地設置於本體110之空心113內側。 The body 110 of the die ejector unit 100 is disposed below the dicing tape 20. Specifically, the body 110 of the die ejector unit 100 is disposed below the selected die 10 . A hollow 113 is defined vertically in the body 110, and the shape of the hollow 113 corresponds to the shape of the die 10. The lifting element 130 is vertically movably disposed inside the hollow 113 of the body 110.
另外,整體而論,於本體110內係定義至少一吸附孔115,藉此對於切割膠帶20進行真空吸附。整體而論,本體110之吸附孔115具有一環形狀,藉此對於切割膠帶20進行真空吸附。另一方面,本體110之吸附孔115係可設置為複數,並且在此方式下之分別具有環形狀複數吸附孔115係可相互間隔。 In addition, as a whole, at least one adsorption hole 115 is defined in the body 110, thereby vacuum-adsorbing the dicing tape 20. In general, the adsorption hole 115 of the body 110 has a ring shape, whereby vacuum suction is applied to the dicing tape 20. On the other hand, the adsorption holes 115 of the body 110 may be provided in plural, and in this manner, the respective plurality of adsorption holes 115 having ring shapes may be spaced apart from each other.
升降元件130係垂直可移動地設置於本體110之空心113內側。於升降元件130內係定義一流體通道135。升降元件130係相對於其它區域下對於切割膠帶20之一第一區域進行相對地升高。那就是,整體而論,於切割膠帶20處 於真空吸附之一狀態下,經升高之升降元件130係相對地升高晶粒10之邊緣區域11。因此,對應於切割膠帶20之第一區域之晶粒10之邊緣區域11係可局部地分離於切割膠帶20。 The lifting element 130 is vertically movably disposed inside the hollow 113 of the body 110. A fluid passage 135 is defined in the lifting element 130. The lifting element 130 is relatively raised relative to the first region of one of the dicing tapes 20 under other regions. That is, overall, at the cutting tape 20 In one of the vacuum adsorption states, the elevated lifting element 130 relatively raises the edge region 11 of the die 10. Therefore, the edge region 11 of the die 10 corresponding to the first region of the dicing tape 20 can be partially separated from the dicing tape 20.
舉例而言,升降元件130係可具有對應於切割膠帶20之第一區域之一頂表面。當對於升降元件130進行升高時,則可對於對應於切割膠帶20之第一區域之晶粒10之邊緣區域11進行選擇性升高。 For example, the lifting element 130 can have a top surface that corresponds to one of the first regions of the dicing tape 20. When the lifting element 130 is raised, the edge region 11 of the die 10 corresponding to the first region of the dicing tape 20 can be selectively raised.
空氣吹送件150係連接於流體通道135。當空氣供應至切割膠帶之第二區域之上時,空氣吹送件150係可將空氣吹送至切割膠帶之第二區域之上。因此,當位於晶粒10之邊緣區域11分離於切割膠帶20之一狀態時,晶粒10之中心區域15係可分離於切割膠帶20。 The air blowing member 150 is coupled to the fluid passage 135. When air is supplied over the second region of the dicing tape, the air blowing member 150 can blow air over the second region of the dicing tape. Therefore, when the edge region 11 located in the die 10 is separated from the state of one of the dicing tapes 20, the central region 15 of the die 10 can be separated from the dicing tape 20.
於一示範實施例中,空氣吹送件150包括一空氣供應來源151及一空氣供應線路153。 In an exemplary embodiment, air blowing member 150 includes an air supply source 151 and an air supply line 153.
空氣供應來源151係供應空氣至升降元件130之流體通道135中。舉例而言,空氣供應來源151可包括一空氣泵。 The air supply source 151 supplies air into the fluid passage 135 of the lifting element 130. For example, the air supply source 151 can include an air pump.
空氣供應線路155可連通於流體通道135及空氣供應來源151。一第一閥件153係可設置於空氣供應線路155中。第一閥件153係可開啟空氣供應線路155以控制空氣吹送件150之一操作。 The air supply line 155 can be in communication with the fluid passage 135 and the air supply source 151. A first valve member 153 can be disposed in the air supply line 155. The first valve member 153 is capable of opening the air supply line 155 to control operation of one of the air blowing members 150.
依照一示範實施例,晶粒頂出單元100更可包括一真空吸附件160,其中,真空吸附件160包括一真空吸附線 路165及一真空吸附來源161。真空吸附件160係可吸附切割膠帶20之一第二區域。整體而論,當操作晶粒頂出單元100時,真空吸附件150係真空吸附切割膠帶20。隨後,在升高升降元件130以相對地升高切割膠帶之第一區域後便停止真空吸附件160之一操作。相繼地,利用操作空氣吹送件150將空氣吹送至切割膠帶20之第二區域。因此,所選晶粒10係可分離於切割膠帶20。 According to an exemplary embodiment, the die ejecting unit 100 further includes a vacuum adsorbing member 160, wherein the vacuum adsorbing member 160 includes a vacuum adsorption line. Road 165 and a vacuum adsorption source 161. The vacuum adsorbing member 160 is capable of adsorbing a second region of one of the dicing tapes 20. In general, when the die ejecting unit 100 is operated, the vacuum adsorbing member 150 is a vacuum suction cutting tape 20. Subsequently, one of the operations of the vacuum adsorbing member 160 is stopped after raising the lifting member 130 to relatively raise the first region of the cutting tape. Successively, air is blown to the second region of the dicing tape 20 by the operating air blowing member 150. Thus, the selected die 10 can be separated from the dicing tape 20.
舉例而言,真空吸附線路165係分支於空氣供應線路155。真空吸附來源161係設置於真空吸附線路165之一端部上。真空吸附來源161係用於經由真空吸附線路165及升降元件130之流體通道135吸附切割膠帶20之第二區域。 For example, vacuum adsorption line 165 branches off to air supply line 155. The vacuum adsorption source 161 is disposed on one end of the vacuum adsorption line 165. The vacuum adsorption source 161 is for adsorbing the second region of the dicing tape 20 via the vacuum adsorption line 165 and the fluid passage 135 of the lifting element 130.
於一示範實施例中,流體通道134可具有一向上漸增直徑。因此,當操作空氣吹送件150時,於流體通道135中之空氣之一壓力係自切割膠帶20之第二區域之一中心朝向外側而漸增。因此,切割膠帶之第二區域之最外部分具有一相對高空氣壓力,並且切割膠帶之第二區域之一中心部分則具有一相對低空氣壓力。因此,晶粒10係可自切割膠帶之外側朝向其第二區域之中心而連續地分離。 In an exemplary embodiment, fluid passage 134 can have an upwardly increasing diameter. Therefore, when the air blowing member 150 is operated, one of the pressures of the air in the fluid passage 135 is gradually increased from the center of one of the second regions of the cutting tape 20 toward the outside. Thus, the outermost portion of the second region of the dicing tape has a relatively high air pressure and the central portion of one of the second regions of the dicing tape has a relatively low air pressure. Therefore, the die 10 can be continuously separated from the outer side of the dicing tape toward the center of the second region thereof.
第5圖表示依照一實施例之一晶粒頂取方法之一流程圖。 Figure 5 is a flow chart showing one of the die topping methods in accordance with an embodiment.
請參閱第5圖,依照一示範實施例之一晶粒頂取方法,於操作S210中係對於一切割膠帶進行支承。舉例而言,切割膠帶可利用一平台進行支承。晶圓所分割成複數 晶粒之一晶圓係附著於切割膠帶。 Referring to FIG. 5, a die topping method according to an exemplary embodiment supports a dicing tape in operation S210. For example, the dicing tape can be supported using a platform. Wafer is divided into plural One of the die wafers is attached to the dicing tape.
於操作S220中,各晶粒係向上真空吸附。利用真空力量經由形成於一頂取單元之一吸附孔吸附晶粒以達到拿取晶粒。因此,具有一相對薄厚度之晶粒的硬度是可增加的。如此一來,即使是在後續晶粒頂出製程中將一物理力施加於晶粒,此同樣可防止於晶粒內產生破裂。 In operation S220, each of the crystal grains is vacuum-adsorbed upward. The crystal grains are adsorbed through the adsorption holes formed in one of the top extraction units by vacuum force to obtain the crystal grains. Therefore, the hardness of the crystal grains having a relatively thin thickness can be increased. In this way, even if a physical force is applied to the crystal grains in the subsequent die ejecting process, the cracking in the crystal grains can be prevented.
隨後,於操作S230中,切割膠帶係向下真空吸附。整體而論是對於切割膠帶進行平坦吸附。舉例而言,整體而論,為了執行真空吸附製程(S230),形成於切割膠帶下方之吸附孔周圍的空氣可經引入通過吸附孔,如此可將切割膠帶吸附在具有吸附孔之一本體上。請參閱第4圖,各晶粒具有一邊緣區域及一中心區域。 Subsequently, in operation S230, the cutting tape is vacuum-adsorbed downward. Overall, it is a flat adsorption of the dicing tape. For example, in general, in order to perform the vacuum adsorption process (S230), air formed around the adsorption holes below the dicing tape may be introduced through the adsorption holes, so that the dicing tape may be adsorbed on one of the bodies having the adsorption holes. Referring to FIG. 4, each of the crystal grains has an edge region and a central region.
於操作S240中,相對於其它區域下將對應於晶粒之邊緣區域之切割膠帶之一第一區域進行相對地升高。舉例而言,切割膠帶之第一區域具有一封閉帶形狀。因此,晶粒之邊緣區域可局部地分離於切割膠帶。 In operation S240, a first region of one of the dicing tapes corresponding to the edge regions of the dies is relatively raised relative to the other regions. For example, the first region of the dicing tape has a closed band shape. Therefore, the edge regions of the grains can be partially separated from the dicing tape.
於一示範實施例中,為了升高切割膠帶之第一區域,則對於設置在切割膠帶之第一區域下方之一升降元件進行升高。升降元件係設置在對應於切割膠帶之第一區域之一位置。於此,當升高升降元件時,應力係局部地集中於切割膠帶之第一區域。以下將針對升降元件進行詳述。 In an exemplary embodiment, to raise the first region of the dicing tape, one of the lifting elements disposed below the first region of the dicing tape is raised. The lifting element is disposed at a position corresponding to one of the first regions of the dicing tape. Here, when the lifting element is raised, the stress is locally concentrated on the first region of the dicing tape. The lifting element will be described in detail below.
於操作S250中,將空氣吹送至對應於晶粒之中心區域之切割膠帶之一第二區域之上以利用一空氣流將晶粒分離於切割膠帶。那就是在操作S240中,晶粒之邊緣區域係可 局部地分離於切割膠帶,並且隨後將空氣吹送至切割膠帶之第二區域之上,藉此將切割膠帶朝向第二區域之中心而連續地分離切割膠帶之第二區域於最外部份。 In operation S250, air is blown onto a second region of one of the dicing tapes corresponding to a central region of the die to separate the die from the dicing tape with an air flow. That is, in operation S240, the edge region of the die is Partially separated from the dicing tape, and then air is blown onto the second region of the dicing tape, thereby continuously separating the second region of the dicing tape from the outermost portion toward the center of the second region.
依照一示範實施例之空氣吹送程序,一空氣壓力可由切割膠帶之第二區域之一中心朝向其外側而漸增。因此,切割膠帶之鄰接於第一區域之第二區域之最外部分係可先分離於切割膠帶。相繼地,晶粒係自切割膠帶朝向第二區域之中心而連續地分離。再者,集中於切割膠帶之第一區域之應力可藉由供應朝向於第二區域之最外部分之具有最高壓力之空氣而分散。因此,可避免於晶粒內產生破裂的情況。 According to the air blowing program of an exemplary embodiment, an air pressure may be gradually increased from the center of one of the second regions of the dicing tape toward the outer side thereof. Thus, the outermost portion of the dicing tape adjacent the second region of the first region can be separated from the dicing tape first. Successively, the die is continuously separated from the dicing tape towards the center of the second zone. Furthermore, the stress concentrated on the first region of the dicing tape can be dispersed by supplying the air having the highest pressure toward the outermost portion of the second region. Therefore, it is possible to avoid the occurrence of cracks in the crystal grains.
於一示範實施例中,當升高升降元件時,升降元件可關閉切割膠帶之第二區域而形成用於導引一空氣流之一封閉區域。那就是當相對於升降元件之其它區域下對於切割膠帶之一第一區域進行相對地升高時,升降元件及切割膠帶之第二區域可形成封閉區域。在一後續空氣吹送程序(S250)中可利用封閉區域對於空氣流進行導引。 In an exemplary embodiment, when the lifting element is raised, the lifting element can close the second region of the cutting tape to form a closed area for guiding an air flow. That is, the second region of the lifting element and the dicing tape can form a closed area when the first region of one of the dicing tapes is raised relative to the other regions of the lifting element. The enclosed area can be used to guide the air flow in a subsequent air blowing procedure (S250).
於一示範實施例中,具有一向上漸增直徑之用以導引當升高升降元件時之空氣流之一流體通道可形成於升降元件中。因此,當供應至切割膠帶之整體表面之空氣抵達封閉區域之最上位置時,於切割膠帶之第二區域之最外部分係會產生一相對高壓力。因此,切割膠帶之鄰接於第一區域之第二區域之最外部分係可先分離於切割膠帶。 In an exemplary embodiment, a fluid passage having an upwardly increasing diameter for guiding a flow of air as the lifting element is raised may be formed in the lifting element. Therefore, when the air supplied to the entire surface of the dicing tape reaches the uppermost position of the closed region, a relatively high pressure is generated at the outermost portion of the second region of the dicing tape. Thus, the outermost portion of the dicing tape adjacent the second region of the first region can be separated from the dicing tape first.
隨後,在程序S250中,經由切割膠帶拿取晶粒。因此, 晶粒頂取程序便可完成。 Subsequently, in the process S250, the crystal grains are taken through the dicing tape. therefore, The die picking process can be completed.
依照一示範實施例之一晶粒頂取方法,對應於晶粒之邊緣區域之切割膠帶之第一區域係可相對於其它區域進行升高而局部地將晶粒之邊緣區域分離於切割膠帶。隨後,空氣吹送程序係可在對應於晶粒之中心區域之切割膠帶之第二區域之上執行,如此將晶粒之中心區域分離於切割膠帶。因此,在不需物理接觸下可將晶粒之中心區域分離於切割膠帶。此外,空氣吹送程序係可在切割膠帶之第二區域之上執行以分散集中在晶粒之第一區域之應力。因此,可避免於切割膠帶之第一區域內產生破裂的情況。 According to a die topping method of an exemplary embodiment, the first region of the dicing tape corresponding to the edge region of the die can be raised relative to the other regions to locally separate the edge regions of the die from the dicing tape. Subsequently, the air blowing process can be performed over the second region of the dicing tape corresponding to the central region of the die, thus separating the central region of the die from the dicing tape. Thus, the central region of the die can be separated from the dicing tape without physical contact. Additionally, an air blowing process can be performed over the second region of the dicing tape to disperse the stress concentrated in the first region of the die. Therefore, it is possible to avoid the occurrence of cracks in the first region of the dicing tape.
第6圖表示依照一實施例之一晶粒頂取裝置之一剖面圖。 Figure 6 is a cross-sectional view showing one of the die ejector devices in accordance with an embodiment.
請參閱第6圖,依照一示範實施例之一晶粒頂取裝置200包括一平台單元280、一晶粒頂出單元205及一頂取單元290。 Referring to FIG. 6 , a die ejector device 200 includes a platform unit 280 , a die ejector unit 205 , and a ejector unit 290 .
平台單元280用於支承一切割膠帶20,附著於切割膠帶20之一晶圓所分割成複數晶粒。平台單元280用於支承一晶圓環(未圖示)以握持切割膠帶20。 The platform unit 280 is used to support a dicing tape 20, and the wafer attached to one of the dicing tapes 20 is divided into a plurality of dies. The platform unit 280 is used to support a wafer ring (not shown) to hold the dicing tape 20.
晶粒頂出單元205係設置於平台單元280之下方。晶粒頂出單元205係對於切割膠帶20之各晶粒進行分離。 The die ejector unit 205 is disposed below the platform unit 280. The die ejector unit 205 separates the respective dies of the dicing tape 20.
晶粒頂出單元205包括一本體210、一升降元件230及一空氣吹送件250。晶粒頂出單元205係設置於切割膠帶20之下方,晶圓所分割成複數晶粒之晶圓係附著於切割膠帶20。晶粒頂出單元205係選擇性地將晶粒10分離於 切割膠帶20。晶粒10可藉由一邊緣區域11及邊緣區域11所圍繞之一中心區域15所分隔(參閱第4圖)。 The die ejector unit 205 includes a body 210, a lifting element 230, and an air blowing member 250. The die ejector unit 205 is disposed under the dicing tape 20, and the wafer into which the wafer is divided into a plurality of dies is attached to the dicing tape 20. The die ejector unit 205 selectively separates the die 10 from Cutting tape 20. The die 10 can be separated by a central region 15 surrounded by an edge region 11 and an edge region 11 (see Figure 4).
本體210係設置於切割膠帶20之下方。具體地,晶粒頂出單元205之本體210係設置於所選晶粒10下方。於本體210中係垂直地定義一空心213,空心213之形狀對應於晶粒10之形狀。升降元件230係垂直可移動地設置於本體210之空心213內側。 The body 210 is disposed below the dicing tape 20. Specifically, the body 210 of the die ejector unit 205 is disposed under the selected die 10 . A hollow 213 is defined vertically in the body 210, and the shape of the hollow 213 corresponds to the shape of the die 10. The lifting element 230 is vertically movably disposed inside the hollow 213 of the body 210.
另外,整體而論,於本體210內係定義至少一吸附孔215,藉此對於切割膠帶20進行真空吸附。整體而論,本體210之吸附孔215具有一環形狀,藉此對於切割膠帶20進行真空吸附。另一方面,本體210之吸附孔215係可設置為複數,並且在此方式下之分別具有環形狀複數吸附孔115係可相互間隔。 In addition, as a whole, at least one adsorption hole 215 is defined in the body 210, thereby vacuum-adsorbing the dicing tape 20. In general, the adsorption hole 215 of the body 210 has a ring shape, whereby the dicing tape 20 is vacuum-adsorbed. On the other hand, the adsorption holes 215 of the body 210 may be provided in plural, and in this manner, the respective plurality of adsorption holes 115 having ring shapes may be spaced apart from each other.
升降元件230係垂直可移動地設置於本體210之空心213內側。於升降元件230內係定義一流體通道235。升降元件230係相對於其它區域下對於切割膠帶20之一第一區域進行升高。那就是,整體而論,於切割膠帶20處於真空吸附之一狀態下,經升高之升降元件230係相對地升高晶粒10之邊緣區域11。因此,對應於切割膠帶20之第一區域之晶粒10之邊緣區域11係可局部地分離於切割膠帶20。 The lifting element 230 is vertically movably disposed inside the hollow 213 of the body 210. A fluid passage 235 is defined in the lifting element 230. The lifting element 230 is raised relative to the first region of one of the dicing tapes 20 relative to other regions. That is, overall, in the state in which the dicing tape 20 is in vacuum adsorption, the elevated lifting element 230 relatively raises the edge region 11 of the die 10. Therefore, the edge region 11 of the die 10 corresponding to the first region of the dicing tape 20 can be partially separated from the dicing tape 20.
舉例而言,升降元件230係可具有對應於切割膠帶20之第一區域之一頂表面。當對於升降元件230進行升高時,則可對於對應於切割膠帶20之第一區域之晶粒10之邊緣區域11進行選擇性升高。 For example, the lifting element 230 can have a top surface that corresponds to one of the first regions of the dicing tape 20. When the lifting element 230 is raised, the edge region 11 of the die 10 corresponding to the first region of the dicing tape 20 can be selectively raised.
空氣吹送件250係連接於流體通道235。當空氣供應至切割膠帶之第二區域之上時,空氣吹送件250係可將空氣吹送至切割膠帶之第二區域之上。因此,當位於晶粒10之邊緣區域11分離於切割膠帶20之一狀態時,藉由空氣吹送件250可將晶粒10之中心區域15分離於切割膠帶20。 The air blowing member 250 is coupled to the fluid passage 235. When air is supplied over the second region of the dicing tape, the air blowing member 250 can blow air over the second region of the dicing tape. Therefore, when the edge region 11 of the die 10 is separated from one of the dicing tapes 20, the central region 15 of the die 10 can be separated from the dicing tape 20 by the air blowing member 250.
於一示範實施例中,空氣吹送件250包括一空氣供應來源251及一空氣供應線路255。 In an exemplary embodiment, air blowing member 250 includes an air supply source 251 and an air supply line 255.
依照一示範實施例,晶粒頂出單元205更可包括一真空吸附件260,其中,真空吸附件260包括一真空吸附線路265及一真空吸附來源261。另外,一第二閥件263係可設置於空氣供應線路265中。真空吸附件260係可吸附切割膠帶20。當操作晶粒頂出單元205時,真空吸附件260係真空吸附切割膠帶2之第二區域。隨後,在升高升降元件230以相對地升高切割膠帶之第一區域後便停止真空吸附件260之一操作。相繼地,利用操作空氣吹送件250將空氣吹送至切割膠帶20之第二區域。因此,所選晶粒10係可分離於切割膠帶20。 According to an exemplary embodiment, the die ejecting unit 205 further includes a vacuum adsorbing member 260, wherein the vacuum adsorbing member 260 includes a vacuum adsorption line 265 and a vacuum adsorption source 261. Additionally, a second valve member 263 can be disposed in the air supply line 265. The vacuum adsorbing member 260 can adsorb the cutting tape 20. When the die ejecting unit 205 is operated, the vacuum adsorbing member 260 vacuum-adsorbs the second region of the dicing tape 2. Subsequently, one of the operations of the vacuum adsorbing member 260 is stopped after the lifting member 230 is raised to relatively raise the first region of the cutting tape. Successively, air is blown to the second region of the dicing tape 20 by the operating air blowing member 250. Thus, the selected die 10 can be separated from the dicing tape 20.
於一示範實施例中,流體通道235可具有一向上漸增直徑。因此,當操作空氣吹送件250時,於流體通道235中之空氣之一壓力係自切割膠帶20之第二區域之一中心朝向外側而漸增。 In an exemplary embodiment, fluid passage 235 can have an upwardly increasing diameter. Therefore, when the air blowing member 250 is operated, one of the pressures of the air in the fluid passage 235 is gradually increased from the center of one of the second regions of the cutting tape 20 toward the outside.
頂取單元290係可移動地設置於平台單元280上方。頂取單元290係對於自切割膠帶20所分離之晶粒10進行拿取。另外,頂取單元290係可對於附著於切割膠帶20之 晶粒10進行吸附,藉此以補足晶粒10之硬度。 The jacking unit 290 is movably disposed above the platform unit 280. The topping unit 290 picks up the die 10 separated from the dicing tape 20. In addition, the topping unit 290 can be attached to the cutting tape 20 The crystal grains 10 are adsorbed to complement the hardness of the crystal grains 10.
第7、8、9圖表示第6圖之晶粒頂取裝置之一操作之剖面圖。 Figures 7, 8, and 9 show cross-sectional views of one of the operation of the die pick-up device of Figure 6.
請參閱第7圖,平台單元280支承切割膠帶20,並且隨後頂取單元290係向上真空吸附晶粒10。舉例而言,利用真空力量經由定義於一頂取單元290之一吸附孔對於晶粒10進行向上真空吸附。因此,具有一相對薄厚度之晶粒10的硬度是可增加的。如此一來,即使是在後續晶粒頂出製程中將一物理力施加於晶粒10,此同樣可防止於晶粒10內產生破裂。 Referring to Figure 7, the platform unit 280 supports the dicing tape 20, and then the ejector unit 290 vacuum absorbing the die 10 upward. For example, the die 10 is subjected to upward vacuum adsorption via a suction hole defined by one of the top extraction units 290 using vacuum force. Therefore, the hardness of the crystal grains 10 having a relatively thin thickness can be increased. As a result, even if a physical force is applied to the die 10 in the subsequent die ejecting process, cracking in the die 10 can be prevented.
當操作真空吸附件260時,真空吸附件260係經由真空吸附線路265及流體通道235對於切割膠帶20進行向上真空吸附。整體而論是對於切割膠帶20進行平坦地吸附。 When the vacuum adsorbing member 260 is operated, the vacuum adsorbing member 260 performs upward vacuum adsorption of the cutting tape 20 via the vacuum adsorption line 265 and the fluid passage 235. Overall, the dicing tape 20 is flatly adsorbed.
隨後,相對於其它區域下升高升降元件230而將對應於晶粒10之邊緣區域之切割膠帶20之第一區域進行相對地升高。因此,晶粒10之邊緣區域可局部地分離於切割膠帶20。 Subsequently, the first region of the dicing tape 20 corresponding to the edge region of the die 10 is relatively raised relative to the other regions by raising the lifting member 230. Therefore, the edge region of the die 10 can be partially separated from the dicing tape 20.
於此,升降元件230係設置在對應於切割膠帶20之第一區域之一位置。於此,當升降元件230升高時,應力係局部地集中於切割膠帶20之第一區域。 Here, the lifting element 230 is disposed at a position corresponding to one of the first regions of the dicing tape 20. Here, when the lifting element 230 is raised, the stress is locally concentrated on the first region of the dicing tape 20.
當操作空氣吹送件250時,利用一空氣流流動通過空氣供應線路255及流體通道235使得空氣吹送至對應於晶粒10之中心區域之切割膠帶20之第二區域之上。因此,升降元件230係升高而局部地將晶粒10之邊緣區域分離於 切割膠帶20。於此,便停止真空吸附件260之操作。 When the air blowing member 250 is operated, an air flow is passed through the air supply line 255 and the fluid passage 235 to blow air over the second region of the dicing tape 20 corresponding to the central region of the die 10. Therefore, the lifting element 230 is raised to locally separate the edge regions of the die 10 from Cutting tape 20. Here, the operation of the vacuum adsorbing member 260 is stopped.
當空氣吹送件250將空氣吹送至切割膠帶20之第二區域之上時,空氣壓力係自切割膠帶20之第二區域之中心朝向外側而漸增。因此,切割膠帶20之鄰接於第一區域之第二區域之最外部分係可先分離於切割膠帶20。相繼地,晶粒10係自切割膠帶朝向第二區域之中心而連續地分離。集中於切割膠帶之第一區域之應力可藉由供應朝向於第二區域之最外部分之具有最高壓力之空氣而分散。因此,可避免於晶粒10內產生破裂的情況。 When the air blowing member 250 blows air over the second region of the dicing tape 20, the air pressure gradually increases from the center of the second region of the dicing tape 20 toward the outside. Therefore, the outermost portion of the dicing tape 20 adjacent to the second region of the first region can be separated from the dicing tape 20 first. Successively, the die 10 is continuously separated from the dicing tape toward the center of the second zone. The stress concentrated on the first region of the dicing tape can be dispersed by supplying the air having the highest pressure toward the outermost portion of the second region. Therefore, it is possible to avoid the occurrence of cracks in the crystal grains 10.
頂取單元290拿取分離之晶粒10。因此,晶粒頂取程序便可完成。 The ejector unit 290 takes the separated dies 10. Therefore, the die picking process can be completed.
如上所述,於根據示範實施之晶粒頂出方法、晶粒頂出單元、晶粒頂取方法及晶粒頂取裝置,對應於晶粒之邊緣區域之切割膠帶之第一區域係可先升高,並且隨後利用空氣流將空氣吹送至對應於晶粒之中心區域之切割膠帶之第二區域之上而將晶粒分離於切割膠帶。因此,晶粒係可自切割膠帶之第一區域朝向其第二區域之中心而連續地分離。另外,利用空氣吹方法將晶粒分離於切割膠帶下可防止晶粒受到衝擊。因此,可避免於晶粒內產生破裂的情況。 As described above, in the die ejector method, the die ejector unit, the die ejector method, and the die ejector device according to the exemplary implementation, the first region of the dicing tape corresponding to the edge region of the die may be Raised, and then the air is blown onto the second region of the dicing tape corresponding to the central region of the die to separate the die from the dicing tape. Thus, the die can be continuously separated from the first region of the dicing tape toward the center of its second region. In addition, the use of an air blowing method to separate the crystal grains under the dicing tape prevents the crystal grains from being impacted. Therefore, it is possible to avoid the occurrence of cracks in the crystal grains.
雖然本發明已以較佳實施例揭露如上,然其並非用以限制本發明,任何熟習此項技藝者,在不脫離本發明之精神和範圍內,當可做更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and the present invention can be modified and retouched without departing from the spirit and scope of the present invention. The scope of protection is subject to the definition of the scope of the patent application attached.
10‧‧‧晶粒 10‧‧‧ grain
100‧‧‧晶粒頂出單元 100‧‧‧ die ejector unit
11‧‧‧邊緣區域 11‧‧‧Edge area
110‧‧‧本體 110‧‧‧ body
115‧‧‧吸附孔 115‧‧‧Adsorption holes
130‧‧‧升降元件 130‧‧‧ lifting element
135‧‧‧流體通道 135‧‧‧ fluid passage
15‧‧‧中心區域 15‧‧‧Central area
150‧‧‧空氣吹送件 150‧‧‧Air blowing parts
151‧‧‧空氣供應來源 151‧‧‧Source of air supply
153‧‧‧第一閥件 153‧‧‧First valve
155‧‧‧空氣供應線路 155‧‧‧Air supply line
160‧‧‧真空吸附件 160‧‧‧Vacuum Adsorbers
161‧‧‧真空吸附來源 161‧‧‧Vacuum adsorption source
165‧‧‧真空吸附線路 165‧‧‧vacuum adsorption line
20‧‧‧切割膠帶 20‧‧‧Cut Tape
200‧‧‧晶粒頂取裝置 200‧‧‧Cell topping device
205‧‧‧晶粒頂出單元 205‧‧‧ die ejector unit
210‧‧‧本體 210‧‧‧ body
213‧‧‧空心 213‧‧‧ hollow
215‧‧‧吸附孔 215‧‧‧Adsorption holes
230‧‧‧升降元件 230‧‧‧ lifting element
235‧‧‧流體通道 235‧‧‧ fluid passage
250‧‧‧空氣吹送件 250‧‧‧Air blowing parts
251‧‧‧空氣供應來源 251‧‧ Air source
255‧‧‧空氣供應線路 255‧‧‧Air supply line
260‧‧‧真空吸附件 260‧‧‧vacuum absorber
261‧‧‧真空吸附來源 261‧‧‧Vacuum adsorption source
263‧‧‧第二閥件 263‧‧‧Second valve
265‧‧‧真空吸附線路 265‧‧‧vacuum adsorption line
280‧‧‧平台單元 280‧‧‧ platform unit
290‧‧‧頂取單元 290‧‧‧Capture unit
OFF‧‧‧關閉 OFF‧‧‧Close
ON‧‧‧開啟 ON‧‧‧Open
S110、S120、S130‧‧‧操作 S110, S120, S130‧‧‧ operations
S210、S220、S230、S240、S250、S260‧‧‧操作 S210, S220, S230, S240, S250, S260‧‧‧ operations
以下將配合所附圖式針對本發明之相關較佳實施例進行詳述如下:第1圖表示依照一實施例之一晶粒頂出方法之一流程圖;第2圖表示依照一實施例之一晶粒頂出單元之一剖面圖;第3圖表示第2圖之晶粒頂出單元之一平面圖;第4圖表示第2圖之一晶粒之一平面圖;第5圖表示依照一實施例之一晶粒頂取方法之一流程圖;第6圖表示依照一實施例之一晶粒頂取裝置之一剖面圖;以及第7、8、9圖表示第6圖之晶粒頂取裝置之一操作之剖面圖。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings in which: FIG. 1 is a flow chart showing one of the die-out methods according to an embodiment; FIG. 2 is a view showing an embodiment according to an embodiment. a sectional view of a die ejector unit; Fig. 3 is a plan view of a die ejector unit of Fig. 2; Fig. 4 is a plan view of a die of Fig. 2; and Fig. 5 is a plan view showing a die according to an embodiment A flow chart of one of the die topping methods; FIG. 6 is a cross-sectional view showing one of the die ejector devices according to an embodiment; and FIGS. 7, 8, and 9 are the die plucking of FIG. A cross-sectional view of the operation of one of the devices.
S110‧‧‧向下真空吸附一切割膠帶 S110‧‧‧Under vacuum adsorption of a cutting tape
S120‧‧‧相對地升高一第一區域 S120‧‧‧ relatively elevated a first area
S130‧‧‧吹送空氣至一第二區域而將一晶粒分離於切割膠帶 S130‧‧‧Blow air to a second area to separate a die from the cutting tape
Claims (13)
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KR1020120015355A KR101190442B1 (en) | 2012-02-15 | 2012-02-15 | Method of ejecting a die from a wafer, die ejecting unit and method of picking up a die and apparatus of picking up a die |
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TWI731450B (en) * | 2018-10-31 | 2021-06-21 | 南韓商細美事有限公司 | Die ejecting apparatus |
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TWI633613B (en) * | 2015-11-20 | 2018-08-21 | 環維電子(上海)有限公司 | SiP MODULE MANUFACTURING PROCESS, PICK-UP PROCESS AND APPARATUS, AND EMI SHIELDING LAYER MANUFACTURING PROCESS |
TWI731450B (en) * | 2018-10-31 | 2021-06-21 | 南韓商細美事有限公司 | Die ejecting apparatus |
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TWI606505B (en) | 2017-11-21 |
CN103258749B (en) | 2016-07-06 |
KR101190442B1 (en) | 2012-10-11 |
CN103258749A (en) | 2013-08-21 |
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