TW201330062A - 用於製備一多層結晶結構之方法及接合結構 - Google Patents

用於製備一多層結晶結構之方法及接合結構 Download PDF

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Publication number
TW201330062A
TW201330062A TW102110416A TW102110416A TW201330062A TW 201330062 A TW201330062 A TW 201330062A TW 102110416 A TW102110416 A TW 102110416A TW 102110416 A TW102110416 A TW 102110416A TW 201330062 A TW201330062 A TW 201330062A
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TW
Taiwan
Prior art keywords
layer
donor
group
implanted
bonding
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TW102110416A
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English (en)
Chinese (zh)
Inventor
戴爾Ａ 懷特
傑瑞菲Ｌ 利伯特
Original Assignee
Ｍｅｍｃ電子材料公司
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Application filed by Ｍｅｍｃ電子材料公司 filed Critical Ｍｅｍｃ電子材料公司
Publication of TW201330062A publication Critical patent/TW201330062A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24174—Structurally defined web or sheet [e.g., overall dimension, etc.] including sheet or component perpendicular to plane of web or sheet

Landscapes

  • Element Separation (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Recrystallisation Techniques (AREA)
TW102110416A 2009-12-30 2010-12-29 用於製備一多層結晶結構之方法及接合結構 TW201330062A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29096109P 2009-12-30 2009-12-30

Publications (1)

Publication Number Publication Date
TW201330062A true TW201330062A (zh) 2013-07-16

Family

ID=43587555

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102110416A TW201330062A (zh) 2009-12-30 2010-12-29 用於製備一多層結晶結構之方法及接合結構
TW099146704A TWI430339B (zh) 2009-12-30 2010-12-29 用於製備一多層結晶結構之方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW099146704A TWI430339B (zh) 2009-12-30 2010-12-29 用於製備一多層結晶結構之方法

Country Status (8)

Country Link
US (2) US8367519B2 (https=)
EP (2) EP2519965B1 (https=)
JP (2) JP5591949B2 (https=)
KR (1) KR20120117843A (https=)
CN (1) CN103026460A (https=)
SG (1) SG181986A1 (https=)
TW (2) TW201330062A (https=)
WO (1) WO2011082079A1 (https=)

Cited By (1)

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TWI509681B (zh) * 2013-11-15 2015-11-21 All Ring Tech Co Ltd Method and apparatus for processing on wafers

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US8796054B2 (en) * 2012-05-31 2014-08-05 Corning Incorporated Gallium nitride to silicon direct wafer bonding
JP6024400B2 (ja) 2012-11-07 2016-11-16 ソニー株式会社 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール
US9281233B2 (en) * 2012-12-28 2016-03-08 Sunedison Semiconductor Limited Method for low temperature layer transfer in the preparation of multilayer semiconductor devices
US9496128B1 (en) 2015-10-15 2016-11-15 International Business Machines Corporation Controlled spalling utilizing vaporizable release layers
SG11202009989YA (en) 2018-04-27 2020-11-27 Globalwafers Co Ltd Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate

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FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
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FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI509681B (zh) * 2013-11-15 2015-11-21 All Ring Tech Co Ltd Method and apparatus for processing on wafers

Also Published As

Publication number Publication date
CN103026460A (zh) 2013-04-03
US20130137241A1 (en) 2013-05-30
JP2013516767A (ja) 2013-05-13
JP5591949B2 (ja) 2014-09-17
KR20120117843A (ko) 2012-10-24
SG181986A1 (en) 2012-08-30
WO2011082079A1 (en) 2011-07-07
JP2013175787A (ja) 2013-09-05
US20110159665A1 (en) 2011-06-30
TWI430339B (zh) 2014-03-11
US8367519B2 (en) 2013-02-05
EP2733735A2 (en) 2014-05-21
TW201140662A (en) 2011-11-16
EP2733735A3 (en) 2014-07-23
EP2519965A1 (en) 2012-11-07
EP2519965B1 (en) 2014-10-01

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