TW201323496A - 拋光墊用胺基甲酸酯樹脂組成物及聚胺基甲酸酯拋光墊 - Google Patents

拋光墊用胺基甲酸酯樹脂組成物及聚胺基甲酸酯拋光墊 Download PDF

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Publication number
TW201323496A
TW201323496A TW101134971A TW101134971A TW201323496A TW 201323496 A TW201323496 A TW 201323496A TW 101134971 A TW101134971 A TW 101134971A TW 101134971 A TW101134971 A TW 101134971A TW 201323496 A TW201323496 A TW 201323496A
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TW
Taiwan
Prior art keywords
polishing pad
polishing
acid
aerosil
urethane
Prior art date
Application number
TW101134971A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshiyuki Oda
Hiroshi Suzaki
Original Assignee
Dainippon Ink & Chemicals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Ink & Chemicals filed Critical Dainippon Ink & Chemicals
Publication of TW201323496A publication Critical patent/TW201323496A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L75/00—Compositions of polyureas or polyurethanes; Compositions of derivatives of such polymers
    • C08L75/04—Polyurethanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/08—Processes
    • C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
    • C08G18/12—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW101134971A 2011-10-19 2012-09-24 拋光墊用胺基甲酸酯樹脂組成物及聚胺基甲酸酯拋光墊 TW201323496A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011229669A JP2013086217A (ja) 2011-10-19 2011-10-19 研磨パッド用ウレタン樹脂組成物、ポリウレタン研磨パッド及びポリウレタン研磨パッドの製造方法

Publications (1)

Publication Number Publication Date
TW201323496A true TW201323496A (zh) 2013-06-16

Family

ID=48102466

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134971A TW201323496A (zh) 2011-10-19 2012-09-24 拋光墊用胺基甲酸酯樹脂組成物及聚胺基甲酸酯拋光墊

Country Status (4)

Country Link
JP (1) JP2013086217A (enrdf_load_stackoverflow)
KR (1) KR20130043060A (enrdf_load_stackoverflow)
CN (1) CN103059551B (enrdf_load_stackoverflow)
TW (1) TW201323496A (enrdf_load_stackoverflow)

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JP5821133B2 (ja) * 2012-03-29 2015-11-24 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法
JP2015059199A (ja) * 2013-09-20 2015-03-30 Dic株式会社 ウレタン組成物及び研磨材
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
CN104261726B (zh) * 2014-09-18 2016-02-03 蓝思科技股份有限公司 一种光学玻璃双面精加工专用研磨垫及其制备方法
JP6504385B2 (ja) * 2014-12-15 2019-04-24 Dic株式会社 研磨パッド
CN104742031B (zh) * 2015-04-07 2017-11-17 蓝思科技（长沙）有限公司 一种调节研磨垫磨削切削力的组合物、方法及模具
CN104772693B (zh) * 2015-04-20 2017-10-17 蓝思科技（长沙）有限公司 一种用于加工超硬陶瓷的金刚石研磨垫及其制备方法
WO2017175894A1 (ko) * 2016-04-06 2017-10-12 케이피엑스케미칼 주식회사 연마패드 제조 방법
CN109311138B (zh) * 2016-06-16 2021-06-22 Dic株式会社 研磨垫、研磨垫的制造方法和研磨方法
CN106985061A (zh) * 2017-03-21 2017-07-28 安徽禾臣新材料有限公司 一种适用于精打磨的吸附垫
KR101949905B1 (ko) * 2017-08-23 2019-02-19 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
KR101949911B1 (ko) * 2017-09-11 2019-02-19 에스케이씨 주식회사 다공성 폴리우레탄 연마패드 및 이의 제조방법
US11642752B2 (en) 2017-09-11 2023-05-09 Sk Enpulse Co., Ltd. Porous polyurethane polishing pad and process for preparing the same
SG11202103983YA (en) * 2018-11-09 2021-05-28 Kuraray Co Polyurethane for use in polishing layer, polishing layer, polishing pad, and method for modifying polishing layer
JP7331453B2 (ja) * 2019-05-17 2023-08-23 Dic株式会社 多孔体の製造方法
TWI791157B (zh) * 2019-07-12 2023-02-01 美商Ｃｍｃ材料股份有限公司 採用聚胺及環己烷二甲醇固化劑之研磨墊
CN111534079A (zh) * 2020-05-27 2020-08-14 安徽禾臣新材料有限公司 聚氨脂高抛研磨材料及其制备方法
CN112094493A (zh) * 2020-08-14 2020-12-18 沈阳化工大学 一种纳米改性热塑性聚氨酯弹性体抛光材料及其制备方法
CN114806483A (zh) * 2020-09-30 2022-07-29 九天起宏(江苏)检测有限公司 一种单组分热塑性聚氨酯胶粘剂及其制备方法
CN114874409A (zh) * 2022-04-26 2022-08-09 江苏利宏科技发展有限公司 一种基于聚醚多元醇的聚氨酯树脂及其制备方法
CN114957965A (zh) * 2022-07-07 2022-08-30 福建长泰万泰矿物制品有限公司 一种高耐热聚氨酯组合物、聚氨酯盘及其制备方法
CN115319649B (zh) * 2022-09-03 2023-08-04 深圳市永霖科技有限公司 一种用于玻璃抛光pu抛光砂纸及其制备方法
CN116444977B (zh) * 2023-06-16 2023-09-05 山东一诺威聚氨酯股份有限公司 聚氨酯弹性体及利用其制备抛光磨块的方法
CN119426743B (zh) * 2025-01-10 2025-04-18 合肥真萍电子科技有限公司 一种晶圆级回流焊设备

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JP2002113662A (ja) * 2000-10-04 2002-04-16 Sinto Brator Co Ltd 回転テーブル及び噴射ノズルの制御方法
JP3826702B2 (ja) * 2000-10-24 2006-09-27 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
US20040224622A1 (en) * 2003-04-15 2004-11-11 Jsr Corporation Polishing pad and production method thereof
JP2005068168A (ja) * 2003-08-21 2005-03-17 Kanebo Ltd ガラス研磨ポリウレタンパッド用２液型組成物、該組成物を用いたガラス研磨ポリウレタンパッド、及びその製造方法
JP4635054B2 (ja) * 2005-01-24 2011-02-16 ルブリゾル アドバンスド マテリアルズ， インコーポレイテッド ナノ粒子／ポリウレタンコンボジットの水性分散物
US9951054B2 (en) * 2009-04-23 2018-04-24 Cabot Microelectronics Corporation CMP porous pad with particles in a polymeric matrix
KR101352235B1 (ko) * 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법
JP4636347B1 (ja) * 2009-06-29 2011-02-23 Ｄｉｃ株式会社 研磨パッド用２液型ウレタン樹脂組成物、ポリウレタン研磨パッド、及びポリウレタン研磨パッドの製造方法
CN101812229B (zh) * 2010-04-02 2012-06-20 宜兴市新光科技有限公司 隔热减震防护膜及其制造方法

Also Published As

Publication number Publication date
KR20130043060A (ko) 2013-04-29
CN103059551A (zh) 2013-04-24
JP2013086217A (ja) 2013-05-13
CN103059551B (zh) 2017-06-06

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