TW201315776A - 光半導體裝置 - Google Patents
光半導體裝置 Download PDFInfo
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- TW201315776A TW201315776A TW101130422A TW101130422A TW201315776A TW 201315776 A TW201315776 A TW 201315776A TW 101130422 A TW101130422 A TW 101130422A TW 101130422 A TW101130422 A TW 101130422A TW 201315776 A TW201315776 A TW 201315776A
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- optical semiconductor
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- semiconductor device
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- resin composition
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Abstract
本發明之目的係提供一種作為封裝樹脂之加成硬化型聚矽氧樹脂組成物之硬化物之變色受到抑制且反射效率之耐久性優異之光半導體裝置。本發明提供一種光半導體裝置,其係以加成硬化型聚矽氧樹脂組成物封裝連接於經鍍銀之銅製導線架之光半導體元件之光半導體裝置,其特徵為前述加成硬化型聚矽氧樹脂組成物含有(A)含有芳基及烯基,且不含環氧基之有機聚矽氧烷,(B)一分子中具有至少兩個氫矽烷基(SiH基),且為具有芳基之有機氫聚矽氧烷,且於構成單位中含有30莫耳%以上之HR2SiO0.5單位之有機氫聚矽氧烷:前述成分(B)中之氫矽烷基相對於前述成分(A)中之烯基之莫耳比成為0.70~1.00之量,以及(C)氫矽烷化觸媒:觸媒量。
Description
本發明係關於光半導體裝置,且係關於利用加成硬化型聚矽氧樹脂組成物封裝之光半導體裝置。
最近,光的強度較強且發熱較大的高亮度發光二極體(LED)已被商品化,且已被廣泛使用。
該種LED裝置係使用與導線架一體成形之杯狀預模製封裝,將LED安裝於其內部,且以封裝樹脂將其封裝而製造。此時,為了確保LED安裝時之導電性及提高LED之反射效率,通常導線架之母材係使用銅,且對其施以鍍銀,但為了降低製造成本,故有使鍍銀之厚度變薄之傾向。
另一方面,對於封裝樹脂,對其性質上要求硬化物具有透明性,一般係使用由雙酚A型環氧樹脂或脂環式環氧樹脂等環氧樹脂及酸酐系硬化劑所組成之環氧樹脂組成物(專利文獻1、專利文獻2)。然而,該環氧樹脂組成物之硬化物由於對具有短波長之光線之透射性低,故耐光耐久性低,或產生因光劣化而著色之問題。
因此,已提案以一分子中含有至少兩個與氫矽烷基(SiH基)具有反應性之碳-碳雙鍵之有機化合物、一分子中含有至少兩個SiH基之矽化合物、及氫矽烷基化觸媒所組成之加成硬化型聚矽氧樹脂組成物作為封裝樹脂(專利
文獻3、專利文獻4)。然而,該加成硬化型聚矽氧樹脂組成物之硬化物(封裝樹脂)在與上述之銅上施以薄鍍銀之導線架之組合中,銀離子會擴散至薄鍍敷層中,並到達封裝樹脂層且變色成茶色,導致亮度下降,故產生LED裝置品質下降之問題。亦即,實際狀況為即使使用該種加成硬化型聚矽氧樹脂組成物,仍無法獲得其硬化物之變色受到抑制、且反射效率之耐久性優異之LED裝置。
[專利文獻1]日本專利第3241338號公報
[專利文獻2]日本特開平7-25987號公報
[專利文獻3]日本特開2002-327126號公報
[專利文獻4]日本特開2002-338833號公報
本發明係鑑於上述問題而完成者,其目的係提供一種作為封裝樹脂的含芳基之加成硬化型聚矽氧樹脂組成物之硬化物之變色受到抑制,且反射效率之耐久性優異之光半導體裝置。
本發明為一種光半導體裝置,其為以加成硬化型聚矽
氧樹脂組成物封裝連接於經鍍銀之銅製導線架之光半導體元件之光半導體裝置,其特徵為前述加成硬化型聚矽氧樹脂組成物含有(A)含有芳基及烯基,且不含環氧基之有機聚矽氧烷,(B)一分子中具有至少兩個氫矽烷基(SiH基),且為具有芳基之有機氫聚矽氧烷,且於構成單位中含有30莫耳%以上之HR2SiO0.5單位(R為不含脂肪族不飽和鍵之相同或不同之一價烴基)之有機氫聚矽氧烷:前述成分(B)中之氫矽烷基相對於前述成分(A)中之烯基之莫耳比(SiH基/烯基)成為0.70~1.00之量,以及(C)氫矽烷化觸媒:觸媒量。
依據該加成硬化型聚矽氧樹脂組成物與鍍銀之銅製導線架之組合,可提供作為封裝樹脂之加成硬化型聚矽氧樹脂組成物之硬化物之變色受到抑制,且反射效率之耐久性優異之光半導體裝置。
另外,前述加成硬化型聚矽氧樹脂組成物中之(A)成分較好為聚矽氧樹脂與矽氧油之混合物。藉由成為聚矽氧樹脂與矽氧油之混合物,而成為具有作為封裝樹脂更適度之硬度、強度、彈性、衝擊強度等。
另外,前述加成硬化型聚矽氧樹脂組成物中之(B)成分較好為以下述式(B1)及/或(B2)表示之有機氫聚矽氧烷。藉由使用該有機氫聚矽氧烷可進一步降低因銀離子造成之硬化物之變色。
再者,前述加成硬化型聚矽氧樹脂組成物較好為含有(D)接著賦予劑者,尤其(D)成分較好為一分子中含有芳基、烯基及環氧基之有機聚矽氧烷。
據此,成為接著性更高之加成硬化型聚矽氧樹脂組成物。
又,本發明於前述導線架使用施以電漿處理者時更為有效。
藉由該電漿處理,可成為加成硬化型聚矽氧樹脂組成物之潤濕性高之導線架,而提高接著性。儘管經活性化之銀溶出於表面,但藉由調節SiH基與烯基之莫耳比,可提供耐變色性優異之半導體裝置。
另外,前述光半導體裝置具有以在內部底面配置前述導線架之方式一體成形之杯狀預模製封裝,且
前述預模製封裝之內部中,前述光半導體元件之電極係透過導電性接著劑及導電性導線與前述導線架連接,而安裝前述半導體元件,或透過焊料凸塊使前述光半導體元件之電極面朝下與前述導線架一起連接,使前述半導體元件經覆晶安裝者,前述預模製封裝之內部係以前述加成硬化型聚矽氧樹脂組成物封裝者。
且,前述光半導體裝置為配置有前述導線架之基板,且以前述加成硬化型聚矽氧樹脂組成物使安裝有透過導電性接著劑及導電性導線連接於該導線架之前述光半導體元件之基板成形、硬化、並經切割者。
該種光半導體裝置為加成硬化型聚矽氧樹脂組成物之硬化物之變色受到抑制,且反射效率之耐久性優異之光半導體裝置。
如以上說明,依據本發明可提供作為封裝樹脂之加成硬化型聚矽氧樹脂組成物之硬化物之變色受到抑制,且反射效率之耐久性優異之光半導體裝置。
以下針對本發明更詳細加以說明。如上述,要求開發出加成硬化型聚矽氧樹脂組成物之硬化物之變色受到抑制,且反射效率之耐久性優異之光半導體裝置。
本發明人等為達成上述目的而進行積極檢討之結果,認為加成硬化型聚矽氧樹脂組成物之硬化物(封裝樹脂)與銅上施以薄的鍍銀之導線架之組合中,銀離子會擴散到薄的鍍敷層上,到達鍍敷層界面或封裝樹脂層。認為變色成茶色之原因為鍍銀表面之銀因熱等而氧化成為銀離子並溶出,與樹脂中之SiH反應而成為還原奈米銀藉此引起變色,並發現藉由使氫矽烷基相對於加成硬化型聚矽氧樹脂組成物中之烯基之莫耳比成為0.70~1.00,可抑制銀之析出,且可獲得其硬化物之變色受到抑制且反射效率之耐久性優異之光半導體裝置,因而完成本發明。以下更詳細說明本發明。
本發明為一種光半導體裝置,其為以加成硬化型聚矽氧樹脂組成物之硬化物封裝連接於經鍍銀之銅製導線架之光半導體元件之光半導體裝置,其特徵為前述加成硬化型聚矽氧樹脂組成物含有(A)含有芳基及烯基,且不含環氧基之有機聚矽氧烷,(B)一分子中具有至少兩個氫矽烷基(SiH基),且為具有芳基之有機氫聚矽氧烷,且於構成單位中含有30莫耳%以上之HR2SiO0.5單位(R為不含脂肪族不飽和鍵之相同或不同之一價烴基)之有機氫聚矽氧烷:前述成分(B)中之氫矽烷基相對於前述成分(A)中之烯基之莫耳
比(SiH基/烯基)成為0.70~1.00之量,以及(C)氫矽烷化觸媒:觸媒量。
此處,前述光半導體裝置具有以在內部底面配置前述導線架之方式一體成形之杯狀預模製封裝,且前述預模製封裝之內部中,前述光半導體元件之電極係透過導電性接著劑及導電性導線與前述導線架連接,而安裝前述半導體元件,或透過焊料凸塊使前述光半導體元件之電極面朝下與前述導線架一起連接,而使前述半導體元件經覆晶安裝者,前述預模製封裝之內部係以前述加成硬化型聚矽氧樹脂組成物之硬化物封裝者。
且,前述光半導體裝置為配置有前述導線架之基板,且以前述加成硬化型聚矽氧樹脂組成物使安裝有透過導電性接著劑及導電性導線連接於該導線架之前述光半導體元件之基板成形、硬化、並經切割者。
該光半導體裝置成為加成硬化型聚矽氧樹脂組成物之硬化物變色受到抑制且反射效率之耐久性優異之光半導體裝置。首先,針對上述光半導體裝置之構造參照圖式具體加以說明。
圖1及2為本發明之光半導體裝置之第一樣態、第二樣態之光半導體裝置之概略剖面圖。圖1所示之光半導體裝置1-1為在以內部底面配置導線架6之方式一體成形成為杯狀之預模製封裝2內部中,透過導電性接著劑4及導電性導線5將未圖示之光半導體元件之電極連接於前述導
線架6上,而安裝光半導體元件3,同時以封裝樹脂7封裝前述預模製封裝2內部而成者。
圖2所示之光半導體裝置1-2為在以內部底面配置導線架6之方式一體成形成為杯狀之預模製封裝2內部中,透過焊料凸塊8將未圖示之光半導體元件3之電極面朝下一起連接於前述導線架6上,而FC(覆晶)安裝光半導體元件3,同時以封裝樹脂7封裝前述預模製封裝2內部而成者。
此處,上述導線架6係使用於母材之銅上經0.5~5μm鍍銀者。且,封裝樹脂7係使用加成硬化型聚矽氧樹脂組成物之硬化物。
且,圖3、4為本發明之光半導體裝置之第三樣態及第四樣態之光半導體裝置之概略剖面圖。圖3所示之光半導體裝置1-3,與圖4所示之光半導體裝置1-4均於保護薄膜9上配置導線架6,且透過導電性接著劑4使光半導體元件3之電極與前述導線架6連接,而安裝光半導體元件3,同時以封裝樹脂7藉由直接成形而封裝該導線架面而成者。
本發明之半導體裝置中使用之加成硬化型聚矽氧樹脂組成物為含有上述成分(A)~(C)者。
成分(B)係成分(B)中之氫矽烷基相對於成分(A)中之烯基之莫耳比(SiH基/烯基)為0.70~1.00,該比例對於封裝樹脂之耐久地防止變色至為重要。較好為0.75~1.00,最好為0.80~1.00。
上述莫耳比未達0.7時組成物之硬化反應無法充分進行,封裝樹脂之特性變不充分,且莫耳比超過1.00時,未反應之氫矽烷基會大量殘留在硬化物中。據此認為導線架之母材之銀界面之銀離子擴散到鍍銀表面或擴散至封裝樹脂中,利用銀離子與未反應之氫矽烷基之還原反應,而恢復成銀,此時會恢復成黃褐色之奈米銀。此導線架母材之銅之朝鍍銀表面或封裝樹脂擴散後之氧化還原反應結果係促進奈米銀自導線架母材之溶出反應,尤其是使封裝樹脂變成黃色~茶色,成為半導體裝置之發光元件亮度降低之原因。
尤其認為由於甲基聚矽氧樹脂等之氣體透過性高,故即使例如銀離子溶出,仍不會內存而會朝大氣中擴散故而不會變色。且,環氧樹脂由於氣體透過性極低,故可防止鍍銀表面或封裝樹脂表面之銀離子之溶出。然而,透明性優異之含有芳基之聚矽氧樹脂之氣體透過性係顯示上述樹脂中間之透過性,故認為銀離子容易內存於樹脂內部或鍍銀表面。
另一方面,藉由使莫耳比成為0.7~1.00,由於硬化反應充分進行故成為作為封裝樹脂為充分者。且,由於未反應之氫矽烷基並未殘留於硬化物中,故即使自導線架產生
之銀離子擴散到鍍銀表面或封裝樹脂內部,亦不會與未反應之氫矽烷基反應。據此,尤其不會使封裝樹脂變色,亦不會使光半導體裝置之發光元件亮度降低。以下針對加成硬化型聚矽氧樹脂組成物之各成分加以說明。
本發明之加成硬化型聚矽氧樹脂組成物之成分(A)為含有芳基及烯基,且不含環氧基之有機聚矽氧烷,例如可以下述平均組成式(1)表示。
R1 a(R2)b(R3)cSiO(4-a-b-c)/2 (1)(式中,a為0.3~1.0,較好為0.4~0.8,b為0.05~1.5,較好為0.2~0.8,c為0.05~0.8,較好為0.05~0.3之數,但a+b+c=0.5~2.0,更好為0.5~1.6。
上述平均組成式(1)中,R1為碳數6~14,較好為碳數6~10之芳基,最好為苯基。R2為碳數1~10,較好為碳數1~6之除芳基、烯基以外之經取代或未經取代之一價烴基。該等R2列舉為甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、辛基、壬基、癸基等烷基;苄基、苯乙基、苯丙基等芳烷基及該等基之氫原子之一部分或全部經氟、溴、氯等鹵原子、氰基等取代者,例如氯甲基、氯丙基、溴乙基、三氟丙基等經鹵素取代之烷基,及氰乙基等,較好為甲基。
上述平均組成式(1)中,R3為碳數2~8,較好為碳數2~6之烯基。該等R3列舉為乙烯基、烯丙基、丙烯
基、異丙烯基、丁烯基、己烯基、環己烯基、辛烯基等,其中以乙烯基或烯丙基較佳。
至於該等有機聚矽氧烷列舉為具有直鏈狀之矽氧油及/或分支構造之聚矽氧樹脂。
矽氧油一般為主鏈由二有機矽氧烷單位((R4)2SiO2/2單位)之重複所成,具有分子鏈之兩末端以三有機矽氧烷基((R4)3SiO1/2單位)封鎖之直鏈狀構造之有機聚矽氧烷(前述式中R4意指上述之R1、R2或R3)。其中以下述平均組成式(2)表示之分子鏈二末端之矽原子上各具有一個以上之乙烯基之直鏈狀有機聚矽氧烷,且在25℃之黏度為10~1,000,000mPa.s,較好為1000~50000mPa.s者,就作業性、硬化性等之觀點而言較佳。黏度可利用旋轉黏度計測定。
矽氧油之情況,與矽原子鍵結之取代基(形成矽氧烷鍵之氧原子除外)之芳基含量較好為5莫耳%以上,更好為8~60莫耳%,最好為10~50莫耳%。
至於該成分(A)之有機聚矽氧烷具體而言列舉為下
述者。
又,成分(A)之有機聚矽氧烷之聚矽氧樹脂為分子內具有以SiO2單位(Q單位)及/或R4SiO1.5單位(T單位)表示之分支構造者。
聚矽氧樹脂之情況,與矽原子鍵結之取代基(形成矽氧烷鍵之氧原子除外)之芳基含量較好為5莫耳%以上,
更好為10~80莫耳%,最好為20~70莫耳%。
具體例示為由SiO2單位、R4 3SiO0.5單位(M單位)所組成之聚矽氧樹脂,由R4SiO1.5單位所組成之聚矽氧樹脂,由R4SiO1.5單位、R4 2SiO單位(D單位)所組成之聚矽氧樹脂,由R4SiO1.5單位、R4 2SiO單位、R4 3SiO0.5單位所組成之聚矽氧樹脂等。
又,該有機聚矽氧烷較好為以GPC測量之聚苯乙烯換算之重量平均分子量為500~100,000之範圍者。
此處,樹脂構造之有機聚矽氧烷可藉由以習知方法使對應之含有水解性基之矽烷或矽氧烷單獨或一起水解而獲得。
此處,導入Q單位之原料列舉為矽酸鈉、矽酸烷酯、聚矽酸烷酯、四氯化矽等。
導入T單位之原料列舉為甲基三氯矽烷、苯基三氯矽烷、環己基三氯矽烷、甲基三甲氧基矽烷、苯基三甲氧基矽烷、環己基三甲氧基矽烷、甲基三乙氧基矽烷、苯基三乙氧基矽烷、環己基三乙氧基矽烷等。
導入含有烯基之M單位之原料列舉為下述者。
至於導入不含烯基之M單位之原料列舉為下述者。
(A)成分較好併用聚矽氧樹脂與矽氧油。藉由併
用,成為作為封裝劑之硬度、彈性、耐龜裂性等特性更優異者,同時亦改善表面觸黏性。較佳之調配比例以質量比計,聚矽氧樹脂:矽氧油較好為95~30:5~70,更好為90~40:10~60,最好為90~50:10~50。
本發明之加成硬化型聚矽氧樹脂組成物之成分(B)為一分子中具有至少兩個氫矽烷基(SiH基),且具有芳基之有機氫聚矽氧烷,且為構成單位中含30莫耳%以上之HR2SiO0.5單位(R為不含脂肪族不飽和鍵之相同或不同之一價烴基)之有機氫聚矽氧烷。
該成分(B)為交聯劑,且為該成分(B)中之氫矽烷基(SiH基)與成分(A)中之烯基藉由加成反應而形成硬化物之有機氫聚矽氧烷。
該種有機氫聚矽氧烷只要是一分子中具有兩個以上,較好具有三個以上之氫矽烷基(SiH基)者即可,其中較好為以下述平均組成式(3)表示之一分子中以具有至少兩個(通常為2~300個),較好具有3個以上(例如3~200個)之與矽原子鍵結之氫原子(SiH基)者。
He(R)fSiO(4-e-f)/2 (3)(式中,R為不含脂肪族不飽和鍵之相同或不同之一價烴基,e及f為滿足0.001≦e<2,0.7≦f≦2,且0.8≦e+f≦3之數)。
上述平均組成式(3)中,R較好為不含脂肪族不飽
和鍵之相同或不同之碳原子數1~10,最好為碳原子數1~7之一價烴基,列舉為例如甲基等低級烷基、苯基等芳基等之以前述平均組成式(1)之取代基R2例示者。
且,e及f為滿足0.001≦e<2,0.7≦f≦2,且0.8≦e+f≦3之數,較好為0.05≦e≦1,0.8≦f≦2,且1≦e+f≦2.7之數。與矽原子鍵結之氫原子之位置並無特別限制,可為分子之末端亦可為非末端。
該有機氫聚矽氧烷列舉為叁(二甲基氫矽氧烷)甲基矽烷、叁(二甲基氫矽氧烷)苯基矽烷、1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基環四矽氧烷、兩末端三甲基矽氧烷基封端之甲基氫聚矽氧烷、兩末端三甲基矽氧烷基封端之二甲基矽氧烷.甲基氫矽氧烷共聚物、兩末端二甲基氫矽氧烷基封端之二甲基聚矽氧烷、兩末端二甲基氫矽氧烷基封端之二甲基矽氧烷.甲基氫矽氧烷共聚物、兩末端三甲基聚矽氧基封端之甲基氫矽氧烷.二苯基矽氧烷共聚物、兩末端三甲基矽氧基封端之甲基氫矽氧烷.二苯基矽氧烷.二甲基矽氧烷共聚物、(CH3)2HSiO1/2單位與SiO4/2單位所成之共聚物、(CH3)2HSiO1/2單位與SiO4/2單位及(C6H5)SiO3/2單位所成之共聚物等。
另外,亦可利用使用以下述構造表示之單位獲得之有機氫聚矽氧烷。
該有機氫聚矽氧烷列舉為下述者。
其中,成分(B)之有機氫聚矽氧烷之分子構造可為直鏈狀、環狀、分支狀、三次元網狀構造之任一種,但可使用一分子中之矽原子數(或聚合度)為3~1,000,尤其是3~300者。
該有機氫聚矽氧烷通常可為藉由使如RSiHCl2、R3SiCl、R2SiCl2、R2SiHCl(R係如前述)之氯矽烷水解,或使水解獲得之矽氧烷平衡化而獲得。
其中,藉由使用末端具有HR2SiO0.5單位之有機氫聚矽氧烷,不僅提高反應性,且容易引起與銀離子或氧化銅之還原反應。因此,成分(B)中之氫矽烷基相對於成分(A)中之烯基之莫耳比(SiH基/烯基)若為0.70~1.00之量,則反應性高之末端R2HSiO0.5單位與成分(A)中
之烯基進行加成反應而消失,故不會引起變色。因此末端R2HSiO0.5單位在全部(B)成分中之構成單位中需含30莫耳%以上。未達30莫耳以上時反應性低使分支狀氫聚有機矽氧烷變多,會成為反應性慢之樹脂。
據此,成分(B)可組合兩種以上而使用。該等中,較好使用以下述式(B1)、(B2)表示之有機氫聚矽氧烷。
尤其,併用(B1)與(B2)較好,其比率以重量比計為99:1~50:50,最好為95:5~60:40。
又,與(B)之矽原子直接鍵結之取代基(形成矽氧烷鍵之氧除外)之5~70莫耳%為芳基,最好為苯基。該加成硬化型聚矽氧樹脂組成物成為透明性高,更適合光半導體裝置者。
成分(C)為產生加成硬化型聚矽氧樹脂組成物之加成硬化反應之觸媒。
該觸媒有鉑系、鈀系、銠系等者,但就成本之觀點而言較好為鉑、鉑黑、氯化鉑酸等鉑系者,可列舉為例如H2PtCl6.mH2O、K2PtCl6、KHPtCl6.mH2O、K2PtCl4、K2PtCl4.mH2O、PtO2.mH2O(m為正整數)等,或該等與烯烴等烴類、醇類或含有乙烯基之有機聚矽氧烷之錯合物等,該等可單獨使用亦可組合兩種以上使用。
該等觸媒成分之調配量宜為硬化有效量即所謂觸媒量,通常為前述成分(A)之合計量每100質量份,以鉑族金屬之質量換算計以0.1~1,000ppm,尤其以0.5~200ppm之範圍使用。
又,前述加成硬化型聚矽氧樹脂組成物較好為含有(D)接著賦予劑者。接著賦予劑列舉為乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、2-(3,4-環氧基環己基)乙基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙
氧基矽烷、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷、3-巰基丙基三甲氧基矽烷等矽烷偶合劑,或分子中具有環氧基、甲基丙烯醯氧基、胺基、巰基、烷氧基等反應性基之矽氧烷等,較好為具有環氧基之矽烷偶合劑、具有環氧基之矽氧烷,最好為一分子中含有芳基、烯基及環氧基之有機聚矽氧烷。一分子中含有芳基、烯基及環氧基之有機聚矽氧烷可例示為以下述通式表示者。該等接著賦予劑可單獨使用,亦可混合兩種以上使用。
該接著賦予劑之調配量相對於(A)成分100質量份較好為0.1~20質量份,更好為0.2~10質量份,最好為0.5~5質量份。調配量太少時會有接著性提高效果不足之情況,即使過多亦無進一步提高接著性之效果,而有對成本不利之情況。
本發明中使用之加成硬化型聚矽氧樹脂組成物雖以上述成分(A)~(C)為必要成分,但該等中亦可視需要調配習知之各種添加劑。
該等添加劑列舉為發煙二氧化矽、發煙二氧化鈦等補強性無機填充劑,碳酸鈣、矽酸鈣、二氧化鈦、氧化鐵、碳黑、氧化鋅等非補強性無機填充劑,BHT、維他命B等抗氧化劑,受阻胺等光劣化防止劑,乙烯基醚類、乙烯醯胺類、環氧樹脂、氧雜環丁烷類、苯二甲酸烯丙酯類、己二酸乙烯酯等反應性稀釋劑等。
加成硬化型聚矽氧樹脂組成物可藉由同時或分別視需要邊施以加熱處理邊攪拌、溶解、混合及分散上述成分(A)~(C)及所需之上述其他成分而獲得。
但,通常以在使用前不進行硬化反應之方式,將成分(A)及成分(C)、與成分(B)分成二液儲存,且在使用時使二液混合並硬化。進行分成該二液之理由係因為若成分(B)與成分(C)同時調配時則有脫氫反應之危險性故而必須避免之故。且,亦可少量添加乙炔醇等之硬化抑制劑作成單液使用。
攪拌等之操作中使用之裝置並無特別限制,可使用具備攪拌、加熱裝置之雷撌機、三軸輥、球磨機、行星式混練機等。且,亦可適當組合該等裝置。
又,所得加成硬化型聚矽氧樹脂組成物之以旋轉黏度
計測定之在25℃之黏度為100~10,000,000mPa.s,最好為300~500,000mPa.s。
如此獲得之加成硬化型聚矽氧樹脂組成物由於依需要藉由加熱而直接硬化,具有高的透明性,且對於LCP等封裝材料或金屬基板之接著極佳,故對光半導體元件之封裝有效,至於光半導體元件列舉為例如LED、光二極體、CCD、CMOS、光耦合器等,對LED之封裝尤其有效。
封裝方法係依據光半導體元件之種類而採用習知方法,加成硬化型聚矽氧樹脂組成物之硬化條件並無特別限制,但通常係在室溫~250℃,較好為60~200℃,通常為1分鐘~10小時,較好為10分鐘~6小時左右下硬化。
又,鍍銀之導線架為了提高上述加成硬化型聚矽氧樹脂組成物之潤濕性,較好預先施以表面處理。進行該表面處理時,就作業性或設備之保全等之觀點而言,以紫外線處理、臭氧處理、電漿處理等乾式法較佳,最好為電漿處理。如此,經電漿處理之導線架成為加成硬化型聚矽氧樹脂組成物之潤濕性高之導線架。
又,前述導線架可為未施以電漿處理者,該情況下就作業性或設備成本之觀點而言較佳。
以如上述獲得之加成硬化型聚矽氧樹脂組成物之硬化
物封裝之光半導體裝置,如上述,由於硬化物中並未殘留未反應之氫矽烷基,結果可提供硬化物之變色受到抑制且反射效率之耐久性優異之光半導體裝置。
以下基於實施例及比較例,具體說明本發明,但本發明並不受下述實施例之限制。
如表1所記載調配下列各種材料,均勻混練獲得各種加成化型聚矽氧樹脂組成物,同時使之在150℃、4小時之條件下加熱、成型,藉此製作10mm(長)×60mm(寬)×1mm(厚)之各種試驗片。
使用如此獲得之試驗片,朝其厚度方向照射450nm波長之光,以目視觀察光透過之外觀。且,依據JIS K 6301,測定拉伸強度、硬度(使用A型、D型彈性試驗機測定)及伸長率。結果一併示於表1。
1)乙烯基苯基樹脂1:具有由(C6H5)SiO1.5單位80莫耳%、(CH3)2ViSiO0.5單位20莫耳%所成之樹脂構造之乙烯基苯基樹脂(乙烯當量0.140mol/100g)
2)乙烯基苯基樹脂2:具有由(C6H5)SiO1.5單位70莫耳%、(CH3)2ViSiO0.5單位30莫耳%所成之樹脂構造之
乙烯基苯基樹脂(乙烯當量0.198mol/100g)
3)乙烯基苯基油1:以下述平均組成式(i)表示之乙烯基苯基油(乙烯基當量0.0185mol/100g)
(z=30,x=68)
4)乙烯基苯基油2:以上述平均組成式(i)表示之乙烯基苯基油(z=9,x=19)(乙烯基當量0.0590mol/100g)
5)苯基氫聚矽氧烷1:以下述平均組成式(ii)表示之苯基氫聚矽氧烷。氫氣產生量94.02ml/g(0.420mol/100g)
(n=2)
6)苯基氫聚矽氧烷2:以下述平均組成式(iii)表示之苯基氫聚矽氧烷。氫氣產生量170.24ml/g(0.760mol/100g)
(n=2)
7)苯基氫聚矽氧烷3:以下述平均組成式(iv)表示之苯基氫聚矽氧烷。氫氣產生量169.8ml/g(0.758mol/100g)
(q=17,r=38)
8)鉑觸媒:鉑觸媒:鉑-二乙烯基四甲基二矽氧烷錯合物之二甲基二苯基聚矽氧烷(兩末端以二甲基乙烯基矽烷基封端者)之溶液[鉑原子含量:1質量%]
9)接著賦予劑1:以下述式(v)表示之接著賦予劑
(式中,h=1、2或3,j=1或2、R=氫原子、甲基或異丙基之化合物之混合物)。
10)接著賦予劑2:以下述式(vi)表示之接著賦予劑
(式中,j=1或2、k=1、2或3、R=氫原子、甲基或異丙基之化合物之混合物,s=0.2、t=0.5、u=0.3)
如表1所示,實施例1~5及比較例1、2中見到充分之物理特性(硬度、拉伸強度、伸長率)。另一方面,比較例3未見到充分之物理特性,且比較例3之拉伸強度及伸長率較差。
又,使用上述實施例1~5及比較例1~3之各種加成硬化型聚矽氧樹脂組成物,製作LED裝置且進行變色度之評價。
亦即,對於底面配置施以厚度2μm之銀鍍敷之銅製導線架之杯狀LED用預模製封裝(3mm×3mm×1mm,開口部之直徑2.6mm),在減壓下進行Ar電漿(輸出100W,照射時間10秒)處理,使用銀膏(導電性接著劑)將InGaN系藍色發光元件之電極連接於該底面之該導線架上,同時以金導線將該發光元件之相對電極連接於相對導線架上,將各種加成硬化型聚矽氧樹脂組成物充填於封裝開口部中,在60℃硬化1小時,接著在150℃硬化4小時進行封裝。
將如此獲得之LED裝置放置在100℃環境下500小時後,以目視調查封裝內之鍍銀表面附近之變色度。且,將上述LED裝置放置在85℃濕度85%環境下500小時後,以目視觀察封裝內之鍍銀表面附近之變色度。結果示於表2。
如表2所示,實施例6~10中在封裝內之鍍銀表面附近未見到變色。另一方面,比較例4~6中在封裝內之鍍銀表面附近變成茶色,相對於實施例6~10以目視觀察見到明顯發光強度降低。且,關於比較例6,雖然在封裝內之鍍銀表面附近略變成茶色,但相對於實施例6~10以目視觀察未見到明顯發光強度降低。
又,本發明並不限於上述實施形態。上述實施形態為例示,凡具有與本發明之申請專利範圍中所記載之技術想法實質相同之構成且發揮相同作用效果者,均包含在本發明之技術範圍內。
1-1~4‧‧‧光半導體裝置
2‧‧‧預模製封裝
3‧‧‧光半導體元件
4‧‧‧導電性接著劑
5‧‧‧導電性導線
6‧‧‧導線架
7‧‧‧封裝樹脂
8‧‧‧焊料凸塊
9‧‧‧保護薄膜
圖1為本發明之光半導體裝置之第一樣態之概略剖面圖。
圖2為本發明之光半導體裝置之第二樣態之概略剖面圖。
圖3為本發明之光半導體裝置之第三樣態之概略剖面圖。
圖4為本發明之光半導體裝置之第四樣態之概略剖面圖。
1-1‧‧‧光半導體裝置
2‧‧‧預模製封裝
3‧‧‧光半導體元件
4‧‧‧導電性接著劑
5‧‧‧導電性導線
6‧‧‧導線架
7‧‧‧封裝樹脂
Claims (8)
- 一種光半導體裝置,其為以加成硬化型聚矽氧樹脂組成物之硬化物封裝連接於經鍍銀之銅製導線架之光半導體元件之光半導體裝置,其特徵為前述加成硬化型聚矽氧樹脂組成物含有(A)含有芳基及烯基,且不含環氧基之有機聚矽氧烷,(B)一分子中具有至少兩個氫矽烷基(SiH基),且為具有芳基之有機氫聚矽氧烷,且於構成單位中含有30莫耳%以上之HR2SiO0.5單位(R為不含脂肪族不飽和鍵之相同或不同之一價烴基)之有機氫聚矽氧烷:前述成分(B)中之氫矽烷基相對於前述成分(A)中之烯基之莫耳比(SiH基/烯基)成為0.70~1.00之量,以及(C)氫矽烷化觸媒:觸媒量。
- 如申請專利範圍第1項之光半導體裝置,其中前述(B)成分為以下述式(B1)及/或(B2)表示之有機氫聚矽氧烷,
- 如申請專利範圍第1或2項之光半導體裝置,其中前述(A)成分為聚矽氧樹脂與矽氧油之混合物。
- 如申請專利範圍第1或2項之光半導體裝置,其係含有特徵為一分子中含有芳基、烯基及環氧基之有機聚矽氧烷的(D)接著賦予劑者。
- 如申請專利範圍第3項之光半導體裝置,其係含有特徵為一分子中含有芳基、烯基及環氧基之有機聚矽氧烷的(D)接著賦予劑者。
- 如申請專利範圍第1或2項之光半導體裝置,其中前述導線架為經施以電漿處理者。
- 如申請專利範圍第1或2項之光半導體裝置,其中前述光半導體裝置具有以在內部底面配置前述導線架之方式一體成形之杯狀預模製封裝,且前述預模製封裝之內部中,前述光半導體元件之電極係透過導電性接著劑及導電性導線與前述導線架連接,以安裝前述半導體元件,或透過焊料凸塊使前述光半導體元件之電極面朝下與前述導線架一起連接,以使前述半導體元件經覆晶安裝者, 前述預模製封裝之內部係以前述加成硬化型聚矽氧樹脂組成物封裝者。
- 如申請專利範圍第1或2項之光半導體裝置,其中前述光半導體裝置為配置有前述導線架之基板,且以前述加成硬化型聚矽氧樹脂組成物使安裝有透過導電性接著劑及導電性導線連接於該導線架之前述光半導體元件之基板成形、硬化、並經切割者。
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