TW201313947A - 處理氣流之裝置 - Google Patents

處理氣流之裝置 Download PDF

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TW201313947A
TW201313947A TW101125893A TW101125893A TW201313947A TW 201313947 A TW201313947 A TW 201313947A TW 101125893 A TW101125893 A TW 101125893A TW 101125893 A TW101125893 A TW 101125893A TW 201313947 A TW201313947 A TW 201313947A
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annular surface
liquid
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outer annular
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Sergey Alexandrovich Voronin
Christopher James Philip Clements
John Leslie Bidder
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Edwards Ltd
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Abstract

本發明係關於處理一氣流12之裝置10。一電漿產生器14產生一電漿焰16。一第一入口18將該氣流輸送至該裝置中。一反應室20位於該電漿產生器之下游，在該反應室中處理氣體。一第二入口22將一液體32接收至該裝置中用於在該反應室之一內表面26上方建立一液體堰24以抵抗固體沈積物在該內表面上之累積。一堰導板28具有一外部環形表面30，該外部環形表面30用於將液體引導過該內表面及與該外部表面流動連通之一內部環形表面34，以使得液體自該外部表面流動至該內部表面以抵抗該內部表面上之沈積。

Description

處理氣流之裝置
本發明係關於處理一氣流之裝置。本發明尤其適用於對自半導體或平板顯示器行業中所使用之一處理室排放之一氣流之處理。
半導體器件之製作中之一主要步驟係藉由汽相前驅物之化學反應在一半導體基板上形成一薄膜。用於在一基板上沈積一薄膜之一種習知技術係化學汽相沈積(CVD)，其通常係電漿增強。在此技術中，處理氣體經供應至裝納基板之一處理室且起反應以在該基板之表面上方形成一薄膜。經供應至該處理室以形成一薄膜之氣體之實例包含但不限於：用於形成一層氮化矽膜之矽烷及氨；用於形成一SiON膜之矽烷、氨及一氧化二氮；用於形成一層氧化矽膜之TEOS及氧氣與臭氧中之一者；以及用於形成一層氧化鋁膜之Al(CH3)3及水蒸汽。
自一處理室排放之氣體可使用一電漿減量器件以高效率且以一相對低成本加以處理。在電漿減量處理中，使氣流流動至一高密度電漿中且在密集條件下該氣流內之電漿物種經受高能電子衝擊從而導致解離成為可與氧氣或氫氣組合以產生相對穩定之副產物之反應性物種。
在產生固體副產物(舉例而言，在矽烷或TEOS氧化期間為矽石)之氣體之電漿減量期間，位於電漿焰之下游之反應室中已遇到阻塞問題。該室通常由直徑約30 mm且長度 90 mm至150 mm之一管組成。反應室之用途係將熱氣體容納於一有限體積中以允許發生減量反應。然而，當使(舉例而言)矽烷、TEOS或有機矽烷減量時該室可因(舉例而言)矽石粒子附著至內表面而變得阻塞。
避免粒子附著至該室之壁之一種方法係在其表面上方形成一水堰。然而，電極(陽極)與反應室之間仍然存在電漿反應器之「乾燥」區域，且電極自身需要額外清洗。
本發明提供一種處理一氣流之裝置，其包括：一電漿產生器，其用於產生一電漿焰；一第一入口，其用於將該氣流輸送至該裝置中；及一反應室，其位於該電漿產生器之下游，在該反應室中藉由該所產生電漿焰處理該氣流；一第二入口，其用於將一液體接收至該裝置中用於在該反應室之一內表面上方建立一液體堰以抵抗來自電漿處理之固體沈積物在該內表面上之累積；及一引流器，亦即一堰導板，其具有與該第二入口流動連通且相對於該反應室之該內表面定位之一外部環形表面，該外部環形表面用於將該液體引導過該反應室之該內表面，其中該引流器進一步包括與該引流器之該外部環形表面流動連通之一內部環形表面以使得液體可流過該引流器之該內部環形表面以抵抗該引流器之該內部環形表面上之沈積。
在一第二態樣中，本發明提供一種引流器，亦即一種堰導板，其具有一外部環形表面，該引流器在使用中將經配置而與一液體入口流動連通且相對於一反應室之內表面定 位以用於將液體引導過該反應室之該內表面，其中該引流器進一步包括與該外部環形表面流動連通之一內部環形表面以使得該液體可流過該內部環形表面以抵抗該引流器之該內部環形表面上之沈積。
為充分理解本發明，現在將參考隨附圖式闡述僅以實例方式給出之本發明之某些實施例。
參照圖1，裝置10經展示用於處理一氣流12。該裝置包括用於產生一電漿焰16之一電漿產生器14。一第一入口18將氣流12輸送至該裝置中。一反應室20係位於電漿產生器之下游，在該反應室中藉由所產生電漿焰處理氣流。某些氣體可在反應室之外部處理。
一第二入口22將一液體32(通常係水)接收至該裝置中用於在反應室20之一內表面26上方建立一液體堰24以抵抗來自電漿處理之固體沈積物在內表面26上之累積。在此實例中，反應室通常係圓柱形。
一引流器通常展示於28處且在圖2及圖3中更詳細地予以展示。引流器可與反應室形成整體或可由經調適以裝配至一處理裝置中之一插入件組成。引流器具有與第二入口22流動連通之一外部環形表面30且相對於反應室之內表面26定位用於將水引導過該內表面以建立水堰24。如圖1中藉由小箭頭36所展示，引流器亦具有與外部環形表面30流動連通之一內部環形表面34，以使得引導液體流動且流過內部環形表面34以抵抗該內部環形表面上之沈積。流過內部 環形表面之液體建立一小水堰38，其首先流過該內部環形表面且然後由於重力下落以併入較大水堰24中。因此，一水堰係建立於引流器之內部表面及外部表面二者上。圖3中更詳細地展示內部環形表面與外部環形表面之間的流動連通。
引流器28具有一障壁表面40，該障壁表面40位於內部環形表面34及外部環形表面30(一方面)與電漿產生器14(另一方面)之間用於阻止因水堰24、38流過內部環形表面及外部環形表面而潤濕電漿產生器。此實例中之障壁表面係通常徑向向內延伸之一凸緣以在水堰24、38與電漿產生器之間提供一實體障壁。障壁表面防止發生於電漿產生器之損壞。障壁表面定義一孔隙42，電漿焰16可穿過該孔隙延伸至反應室中。該孔隙應當足夠大以使電漿焰通常不接觸其，否則其可因熱電漿而變得降級。
內部及外部環形表面係由沿一下游方向自障壁表面40下垂之一大體環形壁44形成。如圖1中所展示，取決於裝置之總尺寸，環形壁通常正交於障壁表面延伸約10 mm至20 mm。圖2及圖3更詳細地展示引流器28。內部環形表面34通常係圓柱形而在此實例中外部環形表面30具有一彎曲面用於將來自液體入口22之液體引導過反應室之內壁。障壁表面係由藉由自環形壁44之上游邊緣垂直延伸之兩個凸緣形成之第一表面46及第二表面48構成。障壁表面46抵抗自主堰24逆流之水之通行而障壁表面48抵抗自較小堰38逆流之水之通行。表面46、48並非如圖1中所展示之配置之情 形一樣對準。
圖3展示引流器28在使用中且係在引流器處向上游觀看之一剖面圖。水32以通常與引流器之環形形狀相切之一角度穿過入口22輸送至裝置中。外部環形表面30引導水穿過其完整圓周以便在反應室之360°範圍上方建立一水堰24。反應室20之外部環形表面30與內表面26一起形成沿著其輸送水之一環形通道。彎曲外部環形表面亦逐漸沿一向下方向引導水。環形壁44中之一間斷50允許在引流器之內部環形表面34與外部環形表面30之間的流動連通36。間斷可係環形壁之圓周中之任何類型之中斷，舉例而言一通孔或通道，然而間斷應經組態以使得將在外部環形表面上方循環之某些但並非所有水引導過內部環形表面。以此方式，外部環形表面係不缺乏在反應室之完整圓周範圍上方建立主水堰所需之水。相反地，必須將充足水輸送至內部環形表面以在內部表面之完整環形範圍上方建立一水堰。具有較佳地小於入口22的一半之一導率之一通孔可係較佳。
此通道之大小經選擇以最佳化繞中心孔口之水之流動。若通道過大，則高流量之水進入該中心空口且形成導致電漿焰之有害冷卻之一噴霧。若通道過小，則進入中心孔口之水係不足以完全洗滌孔口之內壁及防止固體附著/堆積。
在圖3中所展示之實例中，通孔係沿切線方向對準以將水沿一大體切線方向輸送至內部環形表面34上以在該內部環形表面之完整圓周範圍上方建立較小水堰38。通孔位於 如下之一位置中亦較佳：該位置與入口22大體正相對或至少不緊接於入口22之下游以使得在壓力下經輸送至裝置中之水不會被迫直接自入口22至通孔50。
外部環形表面具有小於反應室之直徑之一直徑且緊鄰近於該反應室以使得將繞外部環形表面引導之液體大體沿切線方向轉移至反應室之內表面上以使得在實質上全部內表面上方建立液體堰。在1巴至1.5巴之一水入口壓力下，已發現外部環形表面與反應室之內部壁之間一2 mm間隔產生良好結果。
如以上所指示，引流器可係位於反應室之口處之一插入件。為了確保熱穩健性及防止腐蝕，引流器(亦稱作一堰導板)可自經燒結之碳化矽製造。此材料以及其他陶瓷具有一高熱穩定性且因此適合於鄰近電漿焰定位，其中溫度可達到1500℃。碳化矽亦在化學上抵抗來自半導體工業中廣泛使用之含有鹵素之化學品(尤其，氟及HF)之侵蝕。
10‧‧‧裝置
12‧‧‧氣流
14‧‧‧電漿產生器
16‧‧‧電漿焰
18‧‧‧第一入口
20‧‧‧反應室
22‧‧‧入口/液體入口/第二入口
24‧‧‧水堰/液體堰/較大水堰/主堰
26‧‧‧內表面
28‧‧‧引流器/堰導板
30‧‧‧外部環形表面
32‧‧‧液體/水
34‧‧‧內部環形表面
36‧‧‧流動連通
38‧‧‧水堰/較小水堰/小水堰
40‧‧‧障壁表面
42‧‧‧孔隙
44‧‧‧環形壁
46‧‧‧第一表面/表面/障壁表面
48‧‧‧第二表面/表面/障壁表面
50‧‧‧間斷/通孔
圖1係處理一氣流之裝置之一示意性表示；圖2展示該裝置之一引流器；且圖3展示在使用中之引流器。
10‧‧‧裝置
12‧‧‧氣流
14‧‧‧電漿產生器
16‧‧‧電漿焰
18‧‧‧第一入口
20‧‧‧反應室
22‧‧‧入口/液體入口/第二入口
24‧‧‧水堰/液體堰/較大水堰/主堰
26‧‧‧內表面
28‧‧‧引流器/堰導板
30‧‧‧外部環形表面
32‧‧‧液體/水
34‧‧‧內部環形表面
36‧‧‧流動連通
38‧‧‧水堰/較小水堰/小水堰
40‧‧‧障壁表面
42‧‧‧孔隙
44‧‧‧環形壁

Claims (11)

  1. 一種處理一氣流之裝置，其包括：一電漿產生器，其用於產生一電漿焰；一第一入口，其用於將該氣流輸送至該裝置中；及一反應室，其位於該電漿產生器之下游，在該反應室中藉由該所產生電漿焰處理該氣流；一第二入口，其用於將一液體接收至該裝置中用於在該反應室之一內表面上方建立一液體堰以抵抗來自電漿處理之固體沈積物在該內表面上之累積；及一引流器，其具有與該第二入口流動連通且相對於該內表面定位之一外部環形表面，該外部環形表面用於將該液體引導過該內表面及與該外部環形表面流動連通之一內部環形表面，以使得液體可流過該內部環形表面以抵抗該內部環形表面上之沈積。
  2. 如請求項1之裝置，其中該第二入口係相對於該引流器成角度以使得將液體自該第二入口大體沿切線方向輸送過該外部環形表面。
  3. 如請求項1之裝置，該引流器具有一障壁表面，該障壁表面位於該內部環形表面及該外部環形表面與該電漿產生器之間，用於阻止因由該內部環形表面及該外部環形表面所引導之液體而潤濕該電漿產生器。
  4. 如請求項3之裝置，其中該障壁表面定義一孔隙，該電漿焰可穿過該孔隙延伸至該反應室中。
  5. 如請求項3之裝置，其中該內部環形表面及該外部環形表面係由沿一下游方向自該障壁表面下垂之一大體環形 壁形成。
  6. 如請求項4之裝置，其中該內部環形表面及該外部環形表面係透過該環形壁中之一間斷流動連通，該環形壁經塑形以相對於該內部環形表面沿一大體切線方向自該外部環形表面引導液體。
  7. 如請求項6之裝置，其中該間斷係由穿過該環形壁之經沿切線方向對準之一孔形成。
  8. 如請求項6之裝置，其中該外部環形表面具有小於該反應室之直徑之一直徑且緊鄰近於該反應室以使得將繞該外部環形表面引導之液體大體沿切線方向轉移至該反應室之該內表面上以使得在實質上全部該內表面上方建立該液體堰。
  9. 如請求項1之裝置，其中該引流器係由碳化矽製成。
  10. 一種在如請求項1之裝置中或用於該裝置之引流器。
  11. 一種引流器，其具有一外部環形表面，該引流器在使用中將經配置而與一液體入口流動連通且相對於一反應室之內表面定位以用於將液體引導過該反應室之該內表面，其中該引流器進一步包括與該外部環形表面流動連通之一內部環形表面以使得該液體可流過該內部環形表面以抵抗該引流器之該內部環形表面上之沈積。
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