JP2014529492A - ガス流処理装置 - Google Patents
ガス流処理装置 Download PDFInfo
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- JP2014529492A JP2014529492A JP2014525482A JP2014525482A JP2014529492A JP 2014529492 A JP2014529492 A JP 2014529492A JP 2014525482 A JP2014525482 A JP 2014525482A JP 2014525482 A JP2014525482 A JP 2014525482A JP 2014529492 A JP2014529492 A JP 2014529492A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 30
- 239000007787 solid Substances 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 32
- 239000007789 gas Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
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- B03C3/00—Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/341—Arrangements for providing coaxial protecting fluids
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2252/00—Absorbents, i.e. solvents and liquid materials for gas absorption
- B01D2252/10—Inorganic absorbents
- B01D2252/103—Water
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01D2257/00—Components to be removed
- B01D2257/10—Single element gases other than halogens
- B01D2257/106—Ozone
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01D2257/00—Components to be removed
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- B01D2257/00—Components to be removed
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- B01D2257/402—Dinitrogen oxide
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Abstract
Description
12 ガス流
14 プラズマ発生器
16 プラズマフレア
18 第1入口
20 反応チャンバ
22 第2入口
24 大きい方の流体堰(水堰、主堰)
26 反応チャンバの内部表面
28 フローディレクタ
30 環状外表面
34 環状内表面
38 小さい方の水堰
40、46、48 バリヤ表面
Claims (11)
- ガス流を処理する装置において、プラズマフレアを発生するプラズマ発生器と、ガス流を装置内に導入する第1入口と、プラズマ発生器の下流側の反応チャンバとを有し、該反応チャンバ内では、発生されたプラズマフレアによりガス流が処理され、装置内に液体を受入れるための第2入口を有し、該第2入口は、反応チャンバの内部表面上に液体堰を確立して、プラズマ処理から生じる固体堆積物が内部表面上に蓄積するのを防止し、フローディレクタを更に有し、該フローディレクタは、第2入口と流れ連通しかつ前記内部表面に対向して配置された環状外表面と、該環状外表面と流れ連通している環状内表面とを備え、液体が環状内表面上を流れて該環状内表面上に蒸着することを防止することを特徴とするガス流処理装置。
- 前記第2入口は、液体が、第2入口から環状外表面上をほぼ接線方向に流れるようにフローディレクタに対して整合されていることを特徴とする請求項1記載のガス流処理装置。
- 前記フローディレクタは、環状内表面および環状外表面とプラズマ発生器との間に配置されたバリヤ表面を有し、環状内表面および環状外表面により指向された液体によりプラズマ発生器が濡れることを防止することを特徴とする請求項1または2記載のガス流処理装置。
- 前記バリヤ表面には孔が形成され、該孔を通ってプラズマフレアが反応チャンバ内に進入できることを特徴とする請求項3記載のガス流処理装置。
- 前記環状内表面および環状外表面は、バリヤ表面から下流側方向に垂下したほぼ環状の壁により形成されていることを特徴とする請求項3または4記載のガス流処理装置。
- 前記環状内表面および環状外表面は環状壁に形成された切断部を介して流れ連通しており、切断部は、環状外表面からの液体を環状内表面に対してほぼ接線方向に指向させる形状を有していることを特徴とする請求項4記載のガス流処理装置。
- 前記切断部は、環状壁を貫通する、接線方向に整合したボアにより形成されていることを特徴とする請求項6記載のガス流処理装置。
- 前記環状外表面は、反応チャンバの直径より小さくかつ反応チャンバに近接する直径を有し、これにより、環状外表面30の周囲に指向された液体が反応チャンバの内部表面上にほぼ接線方向に導かれて、実質的に全ての内部表面に亘って液体堰が確立されることを特徴とする請求項6記載のガス流処理装置。
- 前記フローディレクタが炭化ケイ素で作られていることを特徴とする請求項1〜8のいずれか1項記載のガス流処理装置。
- 請求項1〜9のいずれか1項記載のガス流処理装置に使用されることを特徴とするフローディレクタ。
- 環状外表面を有するフローディレクタにおいて、環状外表面は、使用時に液体入口と流れ連通するように配置されかつ反応チャンバの内部表面上に液体を指向させるように反応チャンバの内部表面に対して位置決めされており、環状内表面を更に有し、該環状内表面は、液体が環状内表面上を流れて、フローディレクタの環状内表面上に蒸着することを防止するように環状外表面と流れ連通していることを特徴とするフローディレクタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1114172.8A GB2493750A (en) | 2011-08-17 | 2011-08-17 | Apparatus for treating a gas stream |
GB1114172.8 | 2011-08-17 | ||
PCT/GB2012/051630 WO2013024247A1 (en) | 2011-08-17 | 2012-07-11 | Apparatus for treating a gas stream |
Publications (2)
Publication Number | Publication Date |
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JP2014529492A true JP2014529492A (ja) | 2014-11-13 |
JP6120288B2 JP6120288B2 (ja) | 2017-04-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2014525482A Active JP6120288B2 (ja) | 2011-08-17 | 2012-07-11 | ガス流処理装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9512518B2 (ja) |
EP (1) | EP2744587B1 (ja) |
JP (1) | JP6120288B2 (ja) |
KR (1) | KR101993487B1 (ja) |
CN (1) | CN103747848B (ja) |
GB (1) | GB2493750A (ja) |
TW (1) | TWI563117B (ja) |
WO (1) | WO2013024247A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105879599A (zh) * | 2014-12-24 | 2016-08-24 | 苏州超等环保科技有限公司 | 一种防爆式等离子有机废气处理装置 |
GB2535528A (en) * | 2015-02-23 | 2016-08-24 | Edwards Ltd | Apparatus for treating gas |
US10584873B1 (en) * | 2016-05-06 | 2020-03-10 | David Bacon | Flare gas assembly |
Citations (5)
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US3149222A (en) * | 1962-08-21 | 1964-09-15 | Giannini Scient Corp | Electrical plasma-jet apparatus and method incorporating multiple electrodes |
WO2001091896A1 (fr) * | 2000-05-29 | 2001-12-06 | Three Tec Co., Ltd. | Appareil de traitement d'objets et dispositif a plasma dote de cet appareil |
US20030012718A1 (en) * | 2001-07-11 | 2003-01-16 | Battelle Memorial Institute | Processes and apparatuses for treating halogen-containing gases |
JP2004209373A (ja) * | 2002-12-27 | 2004-07-29 | Youth Engineering Co Ltd | 放電の始動方法、この始動方法を利用した被処理物の処理方法、及びこの始動方法を利用した被処理物の処理装置 |
WO2008093442A1 (ja) * | 2007-01-30 | 2008-08-07 | Kanken Techno Co., Ltd. | ガス処理装置 |
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DE3810820A1 (de) * | 1988-03-30 | 1989-10-12 | Hoechst Ceram Tec Ag | Verfahren zur herstellung von gleitkoerpern mit hohlkammern |
IT1275660B1 (it) | 1994-11-15 | 1997-10-17 | Enel Spa | Assieme di un distributore di acqua di lavaggio e di una piastra di captazione |
US5833888A (en) * | 1996-12-31 | 1998-11-10 | Atmi Ecosys Corporation | Weeping weir gas/liquid interface structure |
KR100982608B1 (ko) * | 2005-06-14 | 2010-09-15 | 유리 미하일로비치 고로보이 | 이산화 티타늄 합성 장치 및 플라즈마 화학 반응기 |
DE102005033585A1 (de) * | 2005-07-19 | 2007-02-01 | Bosch Rexroth Aktiengesellschaft | Registerregelung |
KR101036734B1 (ko) * | 2005-10-31 | 2011-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 공정 저감 반응로 |
GB0523947D0 (en) | 2005-11-24 | 2006-01-04 | Boc Group Plc | Microwave plasma system |
JP5194026B2 (ja) | 2007-11-22 | 2013-05-08 | 株式会社アドテック プラズマ テクノロジー | プラズマ処理装置 |
US8323386B2 (en) | 2009-10-16 | 2012-12-04 | Midwest Research Institute, Inc. | Apparatus and method for electrostatic particulate collector |
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2011
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3149222A (en) * | 1962-08-21 | 1964-09-15 | Giannini Scient Corp | Electrical plasma-jet apparatus and method incorporating multiple electrodes |
WO2001091896A1 (fr) * | 2000-05-29 | 2001-12-06 | Three Tec Co., Ltd. | Appareil de traitement d'objets et dispositif a plasma dote de cet appareil |
US20030012718A1 (en) * | 2001-07-11 | 2003-01-16 | Battelle Memorial Institute | Processes and apparatuses for treating halogen-containing gases |
JP2004209373A (ja) * | 2002-12-27 | 2004-07-29 | Youth Engineering Co Ltd | 放電の始動方法、この始動方法を利用した被処理物の処理方法、及びこの始動方法を利用した被処理物の処理装置 |
WO2008093442A1 (ja) * | 2007-01-30 | 2008-08-07 | Kanken Techno Co., Ltd. | ガス処理装置 |
Also Published As
Publication number | Publication date |
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EP2744587A1 (en) | 2014-06-25 |
CN103747848A (zh) | 2014-04-23 |
KR20140064867A (ko) | 2014-05-28 |
TWI563117B (en) | 2016-12-21 |
TW201313947A (zh) | 2013-04-01 |
GB2493750A (en) | 2013-02-20 |
EP2744587B1 (en) | 2015-06-24 |
WO2013024247A1 (en) | 2013-02-21 |
CN103747848B (zh) | 2016-04-06 |
US20150027373A1 (en) | 2015-01-29 |
GB201114172D0 (en) | 2011-10-05 |
KR101993487B1 (ko) | 2019-06-26 |
JP6120288B2 (ja) | 2017-04-26 |
US9512518B2 (en) | 2016-12-06 |
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