TW201300310A - 具有奈米圖案的磊晶基板及發光二極體的製作方法 - Google Patents

具有奈米圖案的磊晶基板及發光二極體的製作方法 Download PDF

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Publication number
TW201300310A
TW201300310A TW100122659A TW100122659A TW201300310A TW 201300310 A TW201300310 A TW 201300310A TW 100122659 A TW100122659 A TW 100122659A TW 100122659 A TW100122659 A TW 100122659A TW 201300310 A TW201300310 A TW 201300310A
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TW
Taiwan
Prior art keywords
epitaxial substrate
barrier layer
zinc
light
nano pattern
Prior art date
Application number
TW100122659A
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English (en)
Chinese (zh)
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TWI410371B (enExample
Inventor
Xin-Ming Luo
shi-chang Xu
Original Assignee
Aceplux Optotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Aceplux Optotech Inc filed Critical Aceplux Optotech Inc
Priority to TW100122659A priority Critical patent/TW201300310A/zh
Priority to CN201110349563.8A priority patent/CN102856446B/zh
Priority to US13/447,977 priority patent/US8697460B2/en
Publication of TW201300310A publication Critical patent/TW201300310A/zh
Application granted granted Critical
Publication of TWI410371B publication Critical patent/TWI410371B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Electroluminescent Light Sources (AREA)
TW100122659A 2011-06-28 2011-06-28 具有奈米圖案的磊晶基板及發光二極體的製作方法 TW201300310A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW100122659A TW201300310A (zh) 2011-06-28 2011-06-28 具有奈米圖案的磊晶基板及發光二極體的製作方法
CN201110349563.8A CN102856446B (zh) 2011-06-28 2011-11-08 具有纳米结构的磊晶基板及发光二极管的制作方法
US13/447,977 US8697460B2 (en) 2011-06-28 2012-04-16 Methods for pattering an epitaxial substrate and forming a light-emitting diode with nano-patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100122659A TW201300310A (zh) 2011-06-28 2011-06-28 具有奈米圖案的磊晶基板及發光二極體的製作方法

Publications (2)

Publication Number Publication Date
TW201300310A true TW201300310A (zh) 2013-01-01
TWI410371B TWI410371B (enExample) 2013-10-01

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Family Applications (1)

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TW100122659A TW201300310A (zh) 2011-06-28 2011-06-28 具有奈米圖案的磊晶基板及發光二極體的製作方法

Country Status (3)

Country Link
US (1) US8697460B2 (enExample)
CN (1) CN102856446B (enExample)
TW (1) TW201300310A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653665B (zh) 2017-01-10 2019-03-11 鴻海精密工業股份有限公司 一種採用矽基底生長氮化鎵磊晶層的方法

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KR101286211B1 (ko) * 2012-02-16 2013-07-15 고려대학교 산학협력단 발광 소자 제조 방법 및 이를 이용하여 제조된 발광 소자
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
TW201347231A (zh) * 2012-05-04 2013-11-16 Lextar Electronics Corp 發光二極體元件
KR101372413B1 (ko) * 2012-10-12 2014-03-10 삼성코닝정밀소재 주식회사 패턴 기판 제조방법
CN104425661B (zh) * 2013-08-22 2017-03-01 展晶科技(深圳)有限公司 发光二极管及其制造方法
JP6325366B2 (ja) * 2014-06-20 2018-05-16 エバック株式会社 合成樹脂製ホースの製造方法とその装置
CN107305918B (zh) * 2016-04-21 2019-04-12 元鸿（山东）光电材料有限公司 用于紫外光发光二极管的基板及该基板的制造方法
CN109695028B (zh) * 2017-10-20 2020-12-25 Tcl科技集团股份有限公司 氧化锌薄膜及其制备方法、发光器件
TWI728846B (zh) * 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板

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JP3327811B2 (ja) * 1997-05-13 2002-09-24 キヤノン株式会社 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子及び半導体素子基板の製造方法
JP2006509260A (ja) * 2002-12-09 2006-03-16 ピクセリジェント・テクノロジーズ・エルエルシー ナノサイズの半導体粒子をベースとするプログラム可能なフォトリソグラフィマスクおよび可逆性フォトブリーチング可能な材料、ならびにそれらの用途
KR100631905B1 (ko) * 2005-02-22 2006-10-11 삼성전기주식회사 질화물 단결정 기판 제조방법 및 이를 이용한 질화물 반도체 발광소자 제조방법
TWI303115B (en) * 2006-04-13 2008-11-11 Epistar Corp Semiconductor light emitting device
CN100587919C (zh) * 2007-08-22 2010-02-03 中国科学院半导体研究所 用于氮化物外延生长的纳米级图形衬底的制作方法
US8961681B2 (en) * 2008-03-10 2015-02-24 Tata Chemicals Limited Process for the preparation of nano zinc oxide particles
TW200950181A (en) * 2008-05-28 2009-12-01 Genesis Photonics Inc Thermal/electric separation LED
TWM386591U (en) * 2009-07-30 2010-08-11 Sino American Silicon Prod Inc Nano patterned substrate and epitaxial structure
CN101624208A (zh) * 2009-07-31 2010-01-13 天津大学 基于配位化学反应原理的制备氧化锌纳米线阵列的方法
US8577267B2 (en) * 2010-11-16 2013-11-05 Xerox Corporation Transparent intermediate transfer members containing zinc oxide, polyarylsulfone, and polyetheramine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653665B (zh) 2017-01-10 2019-03-11 鴻海精密工業股份有限公司 一種採用矽基底生長氮化鎵磊晶層的方法

Also Published As

Publication number Publication date
US8697460B2 (en) 2014-04-15
CN102856446B (zh) 2015-01-21
US20130005060A1 (en) 2013-01-03
CN102856446A (zh) 2013-01-02
TWI410371B (enExample) 2013-10-01

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