CN109695028B - 氧化锌薄膜及其制备方法、发光器件 - Google Patents
氧化锌薄膜及其制备方法、发光器件 Download PDFInfo
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- CN109695028B CN109695028B CN201710985528.2A CN201710985528A CN109695028B CN 109695028 B CN109695028 B CN 109695028B CN 201710985528 A CN201710985528 A CN 201710985528A CN 109695028 B CN109695028 B CN 109695028B
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 191
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 99
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000243 solution Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 150000002978 peroxides Chemical class 0.000 claims abstract description 24
- 239000011701 zinc Substances 0.000 claims abstract description 22
- 239000002243 precursor Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 239000012266 salt solution Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 62
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000008139 complexing agent Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 9
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 8
- -1 alcohol amine Chemical class 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 150000004972 metal peroxides Chemical class 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 23
- 239000001301 oxygen Substances 0.000 abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 abstract description 23
- 230000007547 defect Effects 0.000 abstract description 11
- 230000005855 radiation Effects 0.000 abstract description 9
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 19
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 12
- 238000004528 spin coating Methods 0.000 description 11
- 238000003756 stirring Methods 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 6
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 4
- 229920001230 polyarylate Polymers 0.000 description 4
- 238000006068 polycondensation reaction Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000003751 zinc Chemical class 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000004246 zinc acetate Substances 0.000 description 3
- 239000011592 zinc chloride Substances 0.000 description 3
- 235000005074 zinc chloride Nutrition 0.000 description 3
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 3
- 229940105296 zinc peroxide Drugs 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 2
- 229940007718 zinc hydroxide Drugs 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910015711 MoOx Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052956 cinnabar Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007863 gel particle Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000007530 organic bases Chemical group 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C—CHEMISTRY; METALLURGY
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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- C23C18/125—Process of deposition of the inorganic material
- C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
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Abstract
本发明属于显示器件领域,提供了氧化锌薄膜及其制备方法、发光器件。本发明,将锌前驱体盐溶液络合后混合后加入过氧化物,反应得到氧化锌晶体颗粒溶液,并将氧化锌晶体颗粒溶液在基板上成膜,得到氧化锌薄膜,从而减少氧化锌薄膜的内部氧空位和表面氧缺陷,使得电子空穴对的辐射组合减少,提高电子传输性能。此外,该制备方法工艺简单,成本低,可实现大面积和大规模生产。
Description
技术领域
本发明属于显示器件领域,尤其涉及氧化锌薄膜及其制备方法、发光器件。
背景技术
氧化锌(ZnO)是一种Ⅱ-Ⅵ族宽禁带半导体材料,具有较大的激子束缚能,可以在室温下实现紫外光的受激发射,为短波长发光器件应用提供了广阔的发展前景。ZnO优异的特性和广泛的应用依赖于高质量、低成本的ZnO薄膜的制备。ZnO薄膜的制备方法有很多,包括有分子束外延、脉冲激光沉积、金属有机化学气相沉积、溅射、喷雾热解和溶胶-凝胶等。其中,溶胶-凝胶法与其他方法相比具有众多优点,如工艺简单、设备低廉、可大面积成膜、掺杂的范围宽(包括掺杂的量和种类),化学计量准确且易于改性,最重要的是摆脱了真空系统的束缚,大大降低了生产成本。
然而,现有的溶胶-凝胶法制备的ZnO薄膜存在有一些问题:ZnO薄膜内部容易存在氧空位,薄膜表面存在氧缺陷,使得电子空穴对的辐射组合减少,因而降低电子传输性能。
发明内容
本发明的目的在于提供一种氧化锌薄膜及其制备方法、发光器件,旨在解决现有的ZnO薄膜内部氧空位和表面氧缺陷,使得电子空穴对的辐射组合减少而降低电子传输性能的问题。
本发明提供了一种氧化锌薄膜的制备方法,所述制备方法包括如下步骤:
提供锌前驱体盐溶液,混合加入络合剂后,混合加入过氧化物,形成过氧化物混合反应体系,反应得到氧化锌晶粒溶液;
提供基板,将所述氧化锌晶粒溶液在所述基板上成膜,得到所述氧化锌薄膜。
本发明提供了一种氧化锌薄膜,所述氧化锌薄膜由如上所述制备方法制备获得。
本发明提供了一种发光器件,包括电子传输层材料,电子传输层材料含有如上所述的氧化锌薄膜。
本发明提供的氧化锌薄膜及其制备方法、发光器件,通过在锌前驱体盐溶液络合后混合加入过氧化物,反应得到氧化锌晶体颗粒溶液,并将氧化锌晶体颗粒溶液在基板上成膜,得到氧化锌薄膜,从而减少ZnO晶粒的内部氧空位和表面氧缺陷,使得电子空穴对的辐射组合减少,提高电子传输性能。此外,该制备方法工艺简单,成本低,可实现大面积和大规模生产。本发明提供的发光器件,其电子传输层材料含有如上所述的氧化锌薄膜,能够提高电子传输性能,增强器件的发光效率。
附图说明
图1是本发明的实施例提供的发光器件的结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
在本发明的描述中,需要理解的是,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
本发明实施例提供了氧化锌薄膜的制备方法。该制备方法包括如下步骤:
步骤S11:提供锌前驱体盐溶液,混合加入络合剂后,混合加入过氧化物,形成混合反应体系,反应得到氧化锌晶粒溶液。
在本发明实施例中,锌前驱体盐溶液在25℃-40℃条件下和络合剂存在的条件下水解反应生成氢氧化锌,氢氧化锌缩聚形成氧化锌颗粒,由于生成氧化锌颗粒的反应速率非常快,需要在混合加入络合剂后迅速加入过氧化物形成过氧化物混合反应体系,反应过程中,过氧化物可迅速氧化锌前驱体盐溶液中的锌离子生成过氧化锌ZnO2,ZnO2容易分解为氧化锌ZnO小粒子,ZnO颗粒容易聚集在ZnO小粒子上长大为ZnO晶粒,在室温条件下,即可得到表面形貌紧实致密,颗粒粒径分布均匀,晶粒边界清晰的氧化锌晶粒。并且,反应过程中,过氧化物逐渐分解,氧原子能填补氧化锌晶粒生长过程中形成的氧空位,使氧化锌凝胶颗粒中氧空位减少,同时过量的氧原子会降低表面氧缺陷的形成,使得电子空穴对的辐射组合减少,提高电子传输性能,增强器件的发光效率。
在本发明实施例中,锌前驱体盐溶液由按浓度为0.2mol/L-1mol/L将锌盐溶解于有机溶剂中恒温搅拌后获得,其中恒温搅拌溶解的温度一般选用40℃-80℃;为了充分搅拌解溶,优选搅拌时间为2h-4h。锌盐为可溶性无机锌盐或可溶性有机锌盐,包括但不限于醋酸锌、硝酸锌、氯化锌、硫酸锌、二水合乙酸锌中的一种;有机溶剂包括但不限于乙二醇甲醚、丙二醇甲醚、异丙醇、乙醇、丙醇、丁醇、丙酮中的一种;络合剂为有机碱,包括但不限于醇、胺和醇胺中的至少一种,例如乙醇胺、乙二醇、二乙醇胺、三乙醇胺、乙二胺中的至少一种,其中,由于乙醇胺、二乙醇胺作为络合剂时,络合能力适中,且其强碱性可以延缓溶胶较强的自然水解和沉降,因此在实际应用中优选乙醇胺、二乙醇胺作为络合剂。
在本发明实施例中,混合加入的络合剂和锌离子的摩尔比影响ZnO的分散情况,优选地,按络合剂和锌前驱体盐溶液中的锌离子的摩尔比为(1.8-2.5):1加入所述络合剂,以此可以获得分散均匀的ZnO颗粒,使得后续获得的ZnO薄膜紧实致密且表面颗粒分布均匀。当络合剂和锌离子的摩尔比小于1.8:1时,络合剂的量不足,容易团聚得到粒径较大的ZnO颗粒,其分散性不好;当络合剂和锌离子的摩尔比大于2.5:1时,络合剂的量过高,使溶液的碱性较强而降低Zn(OH)2的小分子发生团聚使Zn(OH)2发生缩聚反应生成ZnO颗粒的反应速度。
在本发明实施例中,经发明人实验发现,过氧化物的加入量对于氧化锌薄膜的形貌的影响很大,混合反应过程中,保持按过氧化物的质量与混合反应体系的总质量之比为0.2%-1%,混合加入的过氧化物,后续成膜的效果最佳。这是因为:(1)反应过程中水解反应生成Zn(OH)2,Zn(OH)2团聚并缩合生成ZnO颗粒;(2)过氧化物可迅速氧化锌前驱体盐溶液中的锌离子生成过氧化锌ZnO2,ZnO2分解为氧化锌ZnO小粒子;(3)ZnO颗粒在ZnO小粒子生长成ZnO晶粒的过程几乎同时进行,只是由于过氧化物氧化锌离子生成过氧化锌ZnO2的过程相对更快,ZnO小粒子作为晶粒声场的位点必须适量才能形成紧实致密,粒分布均匀,晶粒边界清晰的晶粒。并且,过量过氧化物的加入将导致后续退火处理阶段体系中残留的过氧化物中氧气放出,薄膜失重较多,产生很大的残余应力,薄膜易发生龟裂。
在本发明实施例中,当过氧化物混合加入时,温度过高过氧化物易于分解,例如过氧化氢在50℃时易于分解,因此为了避免过氧化物自身分解速度过快而来不及填补缺陷,优选地将溶液的反应温度控制为25℃-40℃。同时,在此温度范围中对溶液进行保温搅拌,使得前驱体溶液中胶粒分散更加均匀,由于反应是在室温下进行,无需加热,反应条件简单可控。
在本发明实施例中,当过氧化物为H2O2时,H2O2时呈弱酸性,30%H2O2的酸碱度为pH=5左右;当过氧化物为金属过氧化物时,过氧化物为遇水容易生成金属氢氧化物和H2O2,使反应体系呈偏碱性。反应过程中,pH值过高会导致体系中溶胶的水解和缩聚速度减慢;pH值过低将制约水解和缩聚过程中氢离子的形成(Zn(OH)2+2H2O→Zn(OH)4 2-+2H+, 从而生成粒径较大的Zn(OH)2小分子团簇,导致缩聚反应不完全,最终导致薄膜中可能存在部分Zn(OH)2。因此,优选的,反应过程中pH值保持在6-9。其中,pH调节剂包括但不限于冰醋酸、氨水、稀硝酸、稀盐酸中的一种。
步骤S12:提供基板,将氧化锌晶粒溶液在基板上成膜,得到氧化锌薄膜。
在本发明实施例中,将氧化锌晶粒溶液在基板上成膜的步骤包括:将氧化锌晶粒溶液沉积在基板上,在250℃-350℃条件下退火成膜。一方面,由氧化锌晶粒溶液形成的膜层,改善了溶胶凝胶法制备ZnO薄膜的成膜过程,获得紧实致密且薄膜表面颗粒分布均匀的ZnO薄膜,减少薄膜内部氧空位和表面氧缺陷,使得电子空穴对的辐射组合减少,提高电子传输性能;另一方面,通过退火处理使得氧化锌晶粒更优生长且成膜更加均匀。
具体地,将氧化锌晶粒溶液滴加到基板上,旋涂并进行250℃-350℃的退火处理,形成氧化锌薄膜。其中,基板根据实际应用进行选取,例如可以是ITO导电玻璃,或者,当氧化锌薄膜应用于发光器件时,基板可以是正置结构发光器件的发光层或者是倒置结构发光器件的阳极。
为了得到高质量的氧化锌薄膜,在将氧化锌晶粒溶液滴加到基板之前,制备方法中还包括:对基板进行预处理。具体地,将基板用清洁剂清洗,初步去除表面存在的污渍,随后依次在去离子水、丙酮、无水乙醇、去离子水中分别超声清洗20min,以除去表面存在的杂质,最后用高纯氮气吹干,即获得预处理的基板。
以下进一步说明氧化锌薄膜的制备方法:
实施例一:下面以利用醋酸锌、乙醇、乙醇胺、过氧化氢为例进行详细介绍。
将醋酸锌溶解到50ml的乙醇溶液中,形成0.2mol/L-1mol/L的浓度。在充分搅拌之后,控制恒温40℃,滴入适量乙醇胺(乙醇胺与锌的摩尔比为1.8-2.5:1)。然后,保持体系中w(H2O2)=0.2%-1%加入H2O2质量分数为30%的H2O2溶液,氨水调节pH值(6<pH<9),保温搅拌2h-4h,形成前驱体溶液。将前驱体溶液滴到ITO基片,旋涂并在250℃-350℃进行退火处理成膜。
实施例二:下面以硝酸锌、异丙醇、二乙醇胺、过氧化钠为例进行详细介绍。
将硝酸锌溶解到50ml的异丙醇溶液中,形成0.2mol/L-1mol/L的浓度,在充分搅拌之后,控制恒温40℃,滴入适量二乙醇胺(二乙醇胺与锌的摩尔比为2:1)。然后,保持体系中w(Na2O2)=0.2%-1%加入Na2O2,稀硝酸调节pH值(6<pH<9),保温搅拌2h-4h,形成前驱体溶液。将前驱体溶液滴到ITO基片,旋涂并在250℃-350℃进行退火处理成膜。
实施例三:下面以利用氯化锌、甲醇、三乙醇胺、过氧化钾为例进行详细介绍。
将氯化锌溶解到50ml的甲醇溶液中,形成0.2mol/L-1mol/L的浓度,在充分搅拌之后,控制恒温40℃,滴入适量三乙醇胺(三乙醇胺与锌的摩尔比为2:1)。然后,保持体系中w(K2O2)=0.2%-1%加入K2O2,稀盐酸调节pH值(6<pH<9),保温搅拌2h-4h,形成前驱体溶液。将前驱体溶液滴到ITO基片,旋涂并在250℃-350℃进行退火处理成膜。
本发明实施例提供的氧化锌薄膜的制备方法,将锌前驱体盐溶液络合后混合后加入过氧化物,反应得到氧化锌晶体颗粒溶液,并将氧化锌晶体颗粒溶液在基板上成膜,得到氧化锌薄膜,从而减少ZnO晶粒的内部氧空位和表面氧缺陷,使得电子空穴对的辐射组合减少,提高电子传输性能。此外,该制备方法工艺简单,成本低,可实现大面积和大规模生产。
本发明实施例提供了一种氧化锌薄膜,该氧化锌薄膜由如上文所述的方法制备获得,其内部氧空位和表面氧缺陷已经得到改善甚至消除,具有较高的电子传输性能。
本发明实施例提供了一种发光器件,包括电子传输层材料,该电子传输层材料含有如上文所述方法制备的氧化锌薄膜。其中,发光器件可以为正置结构也可以为倒置结构。
以正置结构的发光器件为例,如图1所示,发光器件包括依次设置的衬底1、底电极2、空穴传输层3、发光层4、电子传输层5以及顶电极6,电子传输层5含有按照上述氧化锌薄膜的制备方法制备获得的氧化锌薄膜。
在本发明实施例中,衬底1的选用不受限制,可以采用柔性衬底,也可以采用硬质衬底,柔性衬底包括但不限于聚对苯二甲酸乙二醇酯(PET)、聚对苯二甲酸乙二醇酯(PEN)、聚醚醚酮(PEEK)、聚苯乙烯(PS)、聚醚砜(PES)、聚碳酸酯(PC)、聚芳基酸酯(PAT)、聚芳酯(PAR)、聚酰亚胺(PI)、聚氯乙烯(PV)、聚乙烯(PE)、聚乙烯吡咯烷酮(PVP)、纺织纤维中的一种或多种;硬质衬底包括但不限于玻璃、金属箔片中的一种或多种。
在本发明实施例中,底电极2由常规的阳极材料制成,优选地可以是ITO导电玻璃。
在本发明实施例中,空穴传输层3由本领域常规的空穴传输材料制成,空穴传输层的传输材料可以包括NiO、CuO、CuS、VOx、WOx、MoOx中的至少一种,或者包括TFB、PVK、Poly-TPD、TCTA、CBP中的至少一种,亦可以是其它高性能的空穴传输材料。
在本发明实施例中,发光层4的材料主要为常见的红、绿、蓝、黄光量子点以及红外和紫外光量子点中的至少一种,具体可以是CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe、GaAs、GaP、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、CuInS、CuInSe、以及各种核壳结构量子点或合金结构量子点中的至少一种。
在本发明实施例中,电子功能层5用于传输电子,包括由上一实施例制备方法制备获得的氧化锌薄膜,由于氧化锌薄膜紧实致密、薄膜表面颗粒分布均匀,且薄膜内部氧空位和表面氧缺陷得到改善,因而电子空穴对的辐射组合减少,电子传输性能提高,使得器件的发光效率得到增强。
在本发明实施例中,顶电极6材料的选用不受限制,可以为Ag、Al、Cu、Au以及合金电极中的一种。该层的厚度优选为50nm-150nm,然后器件进行简单的封装。
举例性地,本发明实施例提供的发光器件可由如下方法制备获得:
S21.提供一含有ITO的衬底,将衬底置于匀胶机上,用配制好的空穴传输材料的溶液旋涂成膜;通过调节溶液的浓度、旋涂速度和旋涂时间来控制膜厚,然后在适当温度下热退火处理。
S22.在空穴传输层上,将配制好一定浓度的发光物质溶液旋涂成膜,通过调节溶液的浓度、旋涂速度和旋涂时间来控制发光层的厚度,优选地为20-60nm,在适当温度下干燥。
S23.在发光层上,将本发明的氧化锌晶粒溶液旋涂成膜,在250℃-350℃温度下退火成膜。此步骤可以在空气中退火,或者在氮气氛围中退火,具体根据实际需要选择退火氛围。
S24.将沉积完各功能层的衬底置于蒸镀仓中通过掩膜板热蒸镀一层15-25nm的金属银或者铝作为阴极,或者使用纳米Ag线或者Cu线,具有较小的电阻使得载流子能顺利的注入。将得到的QLED进行封装处理,其中,封装处理可采用常用的机器封装,也可以采用手动封装。优选的,封装处理的环境中,氧含量和水含量均低于0.1ppm,以保证器件的稳定性。
在本发明实施例提供的发光器件,由于电子传输层中氧化锌薄膜紧实致密、薄膜表面颗粒分布均匀,且薄膜内部氧空位和表面氧缺陷得到改善,因而电子空穴对的辐射组合减少,电子传输性能提高,使得器件的发光效率得到增强。
以上仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (7)
1.一种氧化锌薄膜的制备方法,其特征在于,所述制备方法为如下步骤:
提供锌前驱体盐溶液,在25℃-40℃条件下,混合加入络合剂后,混合加入过氧化物,形成混合反应体系,继续反应2-4h得到氧化锌晶粒溶液;
提供基板,将所述氧化锌晶粒溶液在所述基板上成膜,得到所述氧化锌薄膜;
其中,在反应得到氧化锌晶粒溶液的步骤中,反应温度为25℃-40℃;
形成混合反应体系,反应得到氧化锌晶粒溶液的步骤中,反应过程中的pH值为6-9;
所述过氧化物质量与所述混合反应体系总质量之比为0.2-1:100;
络合剂与锌前驱体盐溶液中的锌离子的摩尔比为(1.8-2.5):1。
2.如权利要求1所述的制备方法,其特征在于,所述络合剂选自醇、胺和醇胺中的至少一种。
3.如权利要求1所述的制备方法,其特征在于,将所述氧化锌晶粒溶液在所述基板上成膜的步骤为:
将所述氧化锌晶粒溶液沉积在所述基板上,在250℃-350℃条件下退火成膜。
4.如权利要求1所述的制备方法,其特征在于,所述过氧化物选自过氧化氢、金属过氧化物中的一种或多种。
5.如权利要求1所述的制备方法,其特征在于,所述锌前驱体盐溶液中锌离子浓度为0.2mol/L-1mol/L。
6.一种氧化锌薄膜,其特征在于,所述氧化锌薄膜由如权利要求1-5任一项所述制备方法制备获得。
7.一种发光器件,包括电子传输层材料,其特征在于,所述电子传输层材料含有如权利要求6所述的氧化锌薄膜。
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