201250037 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種真空蒸鍍裝置及真空蒸鍍方法。 【先前技術】 作為有機電致發光（Electro Luminescence，EL)元件等之 有機層之製造方法，已知有真空蒸鍍法。通常真空蒸鍍法 以如下方式進行，即於真空環境下，使基板與欲成膜之蒸 鍵材料對向配置’將蒸鍍材料加熱至蒸氣壓溫度而使所獲 得之蒸發物質附著於基板表面。通常使用粉體作為蒸鑛材 料。 作為加熱蒸鍵材料之方法，有對收納有蒸鑛材料之容器 進行加熱之方法、及將加熱體載置於蒸鍍材料上並以電子 束、感應加熱、加熱器等對加熱體進行加熱之方法（參照專 利文獻1)。 [先前技術文獻] [專利文獻] [專利文獻1]專利第4001296號公報（請求項1及圖〇 【發明内容】 [發明所欲解決之問題] 對容器進行加熱之方法中，對容器整體進行加熱且自下 方加熱蒸鍍材料，故於蒸鍍材料整體變熱之後，會自表面 發生乳化。就此種方法而言，存在由於長時間使用使得某 鍍材料因熱而劣化之情形。因此’存在即便為少量亦欲減 少加熱部分之課題。 156321.doc 201250037 ==龍料制料上之枝中1可僅㈣_ ;蒸鍍材料之…故可抑制材料之劣化。然而專利文 己載之方法中’如圖12所示’加熱體55僅載置於蒸鍍 材=上。因此’若蒸鐘材料53不斷蒸發而導致蒸鑛材料 3減>、，則存在加熱體55會因蒸崎料減少而傾斜之虞。 若加熱體55傾斜，則與加熱體55接觸之接著材⑽之面積 減少’從而導致加熱效率降低。χ，於欲成膜之物質為炼 融材料之情形時’因於蒸發之前一度炼融，故亦存在加执 體55沉沒於蒸鍍材料53中之虞。若加熱體“沉沒於蒸鍍材 科，則成為加熱蒸鍍材料整體，從而有可 鍍材料53劣化。 本發明絲於此種情況而完成者，其目的在於提供一種 可抑制因加熱引起之蒸㈣料之劣化，且可更穩定地將蒸 錄材料蒸鐘於對象構件之真空频裝置及真空蒸鑛方法。 [解決問題之技術手段] 為解決上述課題，本發明提供一種真空蒸鑛裝置，其包 括.容器’其具有開口咅P ’且可收納蒸鍍材料；及複數個 熱源，其於該容器中收納有上述蒸鍍材料之情形時，以與 上述蒸鍍材料接觸之方式固定配置於上述容器内，且可自 外=卩個別地進行加熱控制。 根據上述發明，藉由使熱源與蒸鍍材料直接接觸，可效 率佳地加熱蒸鍍材料。因此，可抑制由熱源所產生之總熱 量，從而可抑制因加熱引起之蒸鍍材料之劣化。因熱源於 谷器内分割配置有複數個，故與對容器整體進行加熱之情 156321.doc 201250037 形相比’各熱源之大小變小。藉此，控制蒸鍍速率之響應 性提高°又’因熱源固定配置於容器内，故不會因蒸鍍材 料之量而傾斜或沉沒。各熱源可自外部個別地進行加熱控 制。藉此’即便於不斷氣化而導致蒸鍍材料之總量發生變 化之情形時’亦可抑制對蒸鍍材料過度加熱，並且可使蒸 锻材料氣化。 於上述發明之一態樣中，亦可進而包括配設於上述容器 之上述開口部且具有1個以上之孔之蓋構件》 根據上述發明之一態樣’於容器之開口部設置形成有1 個以上之孔之蓋構件，藉此經氣化之蒸氣材料通過上述孔 而釋放至容器之外。藉此，經氣化之蒸鍍材料亦可自除進 仃加熱之熱源之正上方以外之位置釋放至容器外。因此， 可使所釋放之蒸鍍材料之分佈穩定化。 於上述發明之—態樣中，較佳為包括加熱上述蓋構件之 加熱機構。 藉由包括加熱機構，於經氣化之蒸鍍材料通過蓋構件之 孔時’可防止蒸鑛材料附著於該孔而使孔堵塞。 於上述發明之一態樣中，上述容器亦可包括將熱源與熱 源之間隔開之隔熱構件。 由此，可抑制未加熱之部分之蒸鍍材料之溫度上升，因 此可抑制蒸鑛材料之劣化。 於上述為明之一態樣中，上述容器包括具有氣體通用口 之蒸發至，上述複數個熱源亦可分別固定配置於上述蒸發 室内。 15632 丨.doc 201250037 由此’可減少熱源之露出部分，因此可抑制經其他熱源 加熱而氣化之蒸鍍材料附著於非加熱時之溫度較低之熱 源。 於上述發明之-態樣中，較佳為進而包括：測量部，其 測量自上述容器釋放之經氣化之蒸鍍材料之量；及控制 部，其根據以上述測量部測量之經氣化之蒸鍍㈣之量之 變化而對上述熱源進行加熱控制。 藉由設為上述構成，可根據蒸鍍材料之氣化量而對熱源 進行加熱控制，因此可使自開σ部釋放之蒸鐘材料之量穩 定化。 又，本發明提供一種真空蒸錄方法，其包括：於具有開 口部且内部固定配置有可個別地進行加熱控制之複數個熱 源之容器中’以與上述熱源接觸之方式填充蒸鐘材料之步 驟；及於上述複數個熱源中僅使用特定熱源加熱蒸鑛㈣ 之第1加熱步驟；及停止利用 > 用上述特疋熱源之加熱而開始利 用與上述蒸錢材料接觸之其他熱源之加熱之第2加熱步驟。 據上述毛月，藉由使熱源與蒸鑛材料直接接觸，可效 !佳地加熱蒸鐘材科。因此，可抑制由熱源所產生之㈣ 。罝。因可自外部對各熱源個別地進行加熱控制，故可使容 ::二1:位置移動。於第1加熱步驟，’僅以特定熱源加 材料。若蒸錄材料不斷氣化，則特定熱源與蒸鑛材 ;之觸面積減少’但藉由開始以其他 埶 :氣化效率穩定化。此時，㈣用特定熱源之加：而： 此’可抑制過度加熱。又，藉由部分性地加熱所填充之： 156321.doc 201250037 鐘材料而可止處於未使用之部位之蒸鑛材料之劣化。 ;上發月之態樣中，較佳為於第2加熱步驟之前進而包 括測量自上述容器釋放之經氣化之蒸鑛材料之量之測量步 驟並根據上述所測量之蒸鑛材料之量之變化而開始上述 其他熱源之加熱。 、藉由包括上述步驟’可根據蒸鐘材料之氣化量而對熱源 進仃加熱控制，因此可使自開口部釋放之蒸鍍材 定化。 德 又’本發明提供-種真空蒸鍍裝置，其包括：容器，其 :有開口 且可收納蒸鍍材料；及至少1個熱源，其於上述 合益中收納有上述蒸鐘材料之情料，與上述諸材料隔 開間隔而配設於上述蒸鍍材料之開口部側之表面；且藉由 上述熱源而氣化之上述蒸鍍材料可越過上述熱源並朝：上 述開口部移動。 根據上述發明’熱源隔開間隔而配設於蒸链材料上，因 I7便於不斷氣化而導致蒸鑛材料之剩餘量發生變化之情 形時’熱源亦不會傾斜或沉沒於蒸鐘材料I藉此，可再 現性佳地使蒸鑛材料氣化。x，因無需加熱所填充之幕鑛 材料整體，故可防止未使用之部位之蒸鑛材料之劣化。又， 較之對谷器整體進行加熱， 化0 可以較少之熱量使蒸鍍材料氣 α於上述發明之—態樣中，較佳為進而包括配設於上述容 器之上述開口部且具有1個以上之孔之蓋構件。 藉由於容器之開口部配設蓋構件，可使經氣化之蒸鍍材 156321.doc 201250037 料釋放至容器外時之蒸鍍材料之分佈穩定化。 於上述發明之一態樣中，較佳為包括加熱上述蓋構件之 加熱機構。 藉由包括加熱機構，於經氣化之蒸鍍材料通過蓋構件之 孔時，可防止蒸鍍材料附著於該孔而使孔堵塞。 [發明之效果] 。、根據本發明，藉由將熱源固定於容器内，熱源不會傾斜 或’儿沒而可更穩定地將蒸鍍材料蒸鍍於對象構件。根據本 發明，藉由使可個別地進行加熱控制之熱源接觸於蒸鍍材 料而可部分性地加熱蒸鍍材料，因&，可抑制蒸錢材料 之劣化。根據本發明，藉由隔開間隔而將熱源配置於蒸鍍 材料之附近，可於表面上加熱蒸鍍材料，因此可抑制蒸鍍 材料之劣化。 …又 【實施方式】 以下參照圖4對本發明《真空蒸鍵I置及真空蒸锻方法 之一實施形態進行說明。 [第1實施形態] 圖1係表不第1實施形態之真空蒸鍍裝置之概略剖面圖。 真空蒸鍵裝置1包括真空腔室2、收納蒸鐘材料3之容器4及 固定於容器4内之複數個熱源5。 真空腔室2係可自外部搬入搬出基板6且可減壓地構成。 於真空腔室2内，藉由基板保持部（未圖示）而將基板6保持於 上部。 容器4形成為具有開口部之箱形狀，其包含例如欽或不鐘 15632l.doc 201250037 鋼等金>|。#||4以㈤口部朝向基板6之板面且底面成為水 平之方式配置於真空腔室2内。 於蒸鍍材料3收納於容器4内之情形時，以與蒸鍍材科3 接觸之方式於容器4内配置有複數個熱源5。熱源5設為w 容器4内配置複數個且可與容器4上表面（開口部）隔開特定 距離間隔之大小。熱源5之數量及配置可根據容器4之大小 或使用之蒸鍍材料3之種類等而適當地設定。例如於容器4 之底面互相隔開間隔而固定有複數個熱源5。複數個熱源5 係可釋放能夠使蒸鐘材料3氣化之熱量者。例如熱源5具有 可於自室溫至400t，至少自約200t至々啊之範圍内加熱 ?篇鐘材料3之性能。複數個熱源5可自外部個別地進行加熱 控制詳細而s，熱源5設為使用鎳鉻合金線進行電阻加熱 荨。較佳為熱源5係如護套式等般受到覆蓋。 亦可於容器4之開口部配設蓋構件7。蓋構件7包含金屬， 例如包含與容器相同之材質，且具有！個以上之孔8。孔8 之數量、孔8之大小及孔8之配置等可根據容器4之大小、蒸 2材料3之種類、熱源5之數量及熱源5之配置等而適當設 疋。猎由包括蓋構件7，可使自容器4釋放之經氣化之蒸錄 材料之分佈均勻化。 蓋構件7亦可配置有複數個。圖2係表示蓋構件7之配置 例於圖2中’蓋構件7a、7b於熱源5之上方隔開間隔而配 置有上下2層。藉由設為此種構成，可使自容器4釋放之經 氣化之蒸鍍材料3之分佈更均勻化。 較佳為蓋構件7包括對自身(特別是孔8)進行加熱之加熱 156321.doc •9- t 201250037 機構（未圖示）。加执檣描 ^ , …機構係與例如熱源5相同地設為護套加 熱器或碳加熱器等。 笮 容器4亦可包括將隔„ ^開間隔而固定於容器4内之複數個埶 源5之熱源與熱源之間 *’’、 隔開之隔熱構件9。隔熱構件9設為包 .SUS等金屬之有光澤之板或包含熱導率較低之陶究材料 之板等。隔熱構件9之厚度及大小可根據熱源5之種類、孰 源與熱源之距離等而適當設定，例示包括隔熱構件9 之谷益4之剖面圖。於圖3中，隔熱構件9具有較熱源5大之 剖面積’至少可阻隔自熱源5釋放之熱朝向水平方向移動。 如圖4所示’隔熱構件9亦可分別配置於箱形狀之容器之X 方向及Υ方向。藉由包括隔熱構件9,可阻隔熱自加熱中所 使用之熱源向處於距該熱源較遠之位置之蒸鑛材料傳遞。 藉此，可抑制位於加熱中未使用之熱源之周邊之蒸鍍材料 之溫度上升’從而可抑制劣化。 真二蒸鍍裝置1較佳為包括測量經氣化之蒸鍍材料之量 之測量部及對熱源進行加熱控制之控制部（未圖示）。 於加熱蒸鍍材料3使其氣化時，測量部可測量自容器4釋 放之經氣化之蒸鍍材料之量。例如測量部設為設置於開口 部附近之晶體振盪器式之成膜速率監視器等。 控制部可根據以測量部所測量之經氣化之蒸鍍材料之變 化而對熱源5進行加熱控制。例如於熱源5為藉由通電而發 電之電阻加熱加熱器之情形時’為使成膜速率保持於固 疋’藉由將速率信號設為PV(Process Value，實際）值、將速 率之目標值設為SV(Setpoint Value，設定）值、且將作為熱 -10- 156321.doc ⑧ 201250037 源5之加熱源之電阻加熱加熱器之電流量設為 MV(Manipulate Value，輸出）值之PID(Pr〇p〇rti〇n 心201250037 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a vacuum evaporation apparatus and a vacuum evaporation method. [Prior Art] A vacuum vapor deposition method is known as a method for producing an organic layer such as an organic electroluminescence (EL) device. Generally, the vacuum evaporation method is carried out in such a manner that the substrate is placed opposite to the vapor-bonding material to be film-formed in a vacuum environment, and the vapor-deposited material is heated to a vapor pressure temperature so that the obtained evaporated substance adheres to the surface of the substrate. . Powder is usually used as a steaming material. As a method of heating the steaming material, there is a method of heating a container containing the steamed material, and placing the heating body on the vapor deposition material, and heating the heating body by electron beam, induction heating, heater, or the like. Method (refer to Patent Document 1). [Prior Art Document] [Patent Document] [Patent Document 1] Patent No. 4001296 (Requirement 1 and Fig. [Explanation] [Problems to be Solved by the Invention] In the method of heating a container, the entire container is subjected to Since the vapor deposition material is heated and heated from below, the entire vapor deposition material is emulsified from the surface. In this method, there is a case where a certain plating material is deteriorated by heat due to long-term use. Even if it is a small amount, it is intended to reduce the problem of heating. 156321.doc 201250037 ==1 of the material on the material of the dragon material can only be (4) _; the material of the vapor deposition material can inhibit the deterioration of the material. 'As shown in Fig. 12', the heating body 55 is only placed on the vapor deposition material =. Therefore, if the steaming material 53 is continuously evaporated to cause the vaporized material 3 to decrease, the heating body 55 may be vaporized. If the heating body 55 is inclined, the area of the bonding material (10) that is in contact with the heating body 55 is reduced, resulting in a decrease in heating efficiency. When the material to be formed is a smelting material, Evaporation Once the smelting is performed, the squeezing material 53 is sunk in the vapor deposition material 53. If the heating body is "sinked in the vapor deposition material, the entire vapor deposition material is heated, and the platable material 53 is deteriorated. The wire is completed in such a case, and an object thereof is to provide a vacuum frequency device and a vacuum steaming method which can suppress deterioration of steaming (four) material due to heating, and can more stably vaporize the steaming material to the target member. [Means for Solving the Problems] In order to solve the above problems, the present invention provides a vacuum distillation apparatus comprising: a container having an opening 咅P′ and accommodating a vapor deposition material; and a plurality of heat sources housed in the container In the case of the vapor deposition material described above, it is fixedly disposed in the container so as to be in contact with the vapor deposition material, and can be individually controlled from the outside. The heat source and the vapor deposition material are directly used according to the above invention. The contact can efficiently heat the vapor deposition material, thereby suppressing the total heat generated by the heat source, thereby suppressing deterioration of the vapor deposition material due to heating. Since there are a plurality of internal divisions, the size of each heat source is smaller than that of heating the entire container 156321.doc 201250037. Thereby, the responsiveness of controlling the vapor deposition rate is improved, and the heat source is fixedly disposed in the container. Therefore, it does not tilt or sink due to the amount of vapor deposition material. Each heat source can be individually controlled from the outside, so that 'even when the total amount of vapor deposition material changes due to continuous gasification' The overheating of the vapor deposition material can be suppressed, and the vapor-forged material can be vaporized. In one aspect of the invention, a cover member having one or more holes disposed in the opening of the container may be further included. According to one aspect of the invention, a cover member having one or more holes formed in the opening of the container is provided, whereby the vaporized vapor material is released to the outside of the container through the hole. Thereby, the vaporized material which is vaporized can be released to the outside of the container at a position other than directly above the heat source for heating. Therefore, the distribution of the evaporated evaporation material can be stabilized. In the above aspect of the invention, it is preferable to include a heating means for heating the cover member. By including the heating means, when the vaporized vapor-deposited material passes through the hole of the cover member, the vapor-deposited material can be prevented from adhering to the hole to block the hole. In one aspect of the invention, the container may further include a heat insulating member that separates the heat source from the heat source. Thereby, the temperature rise of the vapor-deposited material in the unheated portion can be suppressed, so that deterioration of the vapor-deposited material can be suppressed. In one aspect as described above, the container includes evaporation from a gas universal port, and the plurality of heat sources may be fixedly disposed in the evaporation chamber. 15632 丨.doc 201250037 Thus, the exposed portion of the heat source can be reduced, so that the vapor deposition material vaporized by the heating of other heat sources can be prevented from adhering to the heat source having a lower temperature when not heated. In the above aspect of the invention, it is preferable to further include: a measuring unit that measures an amount of the vaporized vapor-deposited material released from the container; and a control unit that is vaporized according to the measuring unit The heat source is heated and controlled by the change in the amount of vapor deposition (four). According to the above configuration, since the heat source can be heated and controlled according to the vaporization amount of the vapor deposition material, the amount of the vapor material released from the σ portion can be stabilized. Further, the present invention provides a vacuum vapor deposition method comprising the steps of: filling a steaming material in contact with the heat source in a container having an opening and internally fixedly disposed with a plurality of heat sources individually controllable for heating control; And heating, in the plurality of heat sources, using only a specific heat source to heat the steam (4); and stopping the use of > heating by using the heat source of the special heat source to start heating with another heat source in contact with the steaming material 2 heating step. According to the above-mentioned Maoyue, by directly contacting the heat source with the steamed mineral material, it is effective to heat the steamed clock material. Therefore, it is possible to suppress (4) generated by the heat source. Hey. Since the heat sources can be individually controlled from the outside, the position can be moved. In the first heating step, the material is only added with a specific heat source. If the steaming material is continuously vaporized, the specific heat source and the steamed material will have a reduced contact area, but will be stabilized by other gasification efficiency. At this time, (4) the addition of a specific heat source: and: this can suppress excessive heating. Moreover, by partial heating, it is filled with: 156321.doc 201250037 The material can be deteriorated by the steamed mineral material in the unused portion. Preferably, before the second heating step, the measuring step of measuring the amount of the vaporized vaporized material released from the container is further included and the amount of the distilled mineral material measured according to the above The heating of the other heat sources mentioned above is started. By including the above step ', the heat source can be heated and controlled according to the amount of vaporization of the steaming material, so that the vapor deposition material released from the opening can be defined. The present invention provides a vacuum evaporation apparatus comprising: a container having an opening and accommodating an evaporation material; and at least one heat source accommodating the above-mentioned steaming material in the above-mentioned benefits And the surface of the vapor deposition material is disposed on the surface of the vapor deposition material at a distance from the material; and the vapor deposition material vaporized by the heat source passes over the heat source and moves toward the opening. According to the above invention, the heat source is disposed on the steamed chain material at intervals, and when the residual amount of the steamed ore material changes due to the convenience of continuous gasification of I7, the heat source does not tilt or sink in the steaming material I. Thus, the reproducibility of the vaporized material is vaporized. x, since it is not necessary to heat the entire curtain mineral material to be filled, it is possible to prevent deterioration of the steamed ore material in the unused portion. Further, the heating of the whole of the granules is carried out, and the amount of heat of the vapor-deposited material gas α is less than that of the above-described invention, and preferably includes the opening portion of the container and has 1 More than one cover member for the hole. By arranging the lid member in the opening of the container, the vapor deposition material can be stabilized when the vaporized vapor-deposited material 156321.doc 201250037 is released outside the container. In one aspect of the invention described above, it is preferred to include a heating mechanism for heating the cover member. By including the heating means, when the vaporized vapor-deposited material passes through the hole of the cover member, it is possible to prevent the vapor deposition material from adhering to the hole and clogging the hole. [Effects of the Invention]. According to the present invention, by fixing the heat source in the container, the heat source can be vapor-deposited to the target member more stably without tilting or aging. According to the present invention, the vapor deposition material can be partially heated by bringing the heat source which can be individually controlled by heating into contact with the vapor deposition material, whereby deterioration of the vapor deposition material can be suppressed. According to the present invention, since the heat source is disposed in the vicinity of the vapor deposition material at intervals, the vapor deposition material can be heated on the surface, so that deterioration of the vapor deposition material can be suppressed. [Embodiment] Hereinafter, an embodiment of the vacuum evaporation key I and vacuum steaming method of the present invention will be described with reference to Fig. 4 . [First Embodiment] Fig. 1 is a schematic cross-sectional view showing a vacuum vapor deposition apparatus according to a first embodiment. The vacuum evaporation key device 1 includes a vacuum chamber 2, a container 4 for accommodating the vapor material 3, and a plurality of heat sources 5 fixed in the container 4. The vacuum chamber 2 can be carried in and out of the substrate 6 from the outside and can be configured to be decompressed. In the vacuum chamber 2, the substrate 6 is held in the upper portion by a substrate holding portion (not shown). The container 4 is formed in a box shape having an opening portion containing, for example, gold or the like, such as Chin or No. 15632l.doc 201250037 steel. #||4 is disposed in the vacuum chamber 2 so that the (5) mouth faces the plate surface of the substrate 6 and the bottom surface is horizontal. When the vapor deposition material 3 is housed in the container 4, a plurality of heat sources 5 are disposed in the container 4 so as to be in contact with the vapor deposition material. The heat source 5 is set to have a plurality of spaces in the w container 4 and can be spaced apart from the upper surface (opening portion) of the container 4 by a specific distance. The number and arrangement of the heat sources 5 can be appropriately set depending on the size of the container 4 or the type of the vapor deposition material 3 to be used. For example, a plurality of heat sources 5 are fixed to each other at intervals on the bottom surface of the container 4. A plurality of heat sources 5 are capable of releasing heat capable of vaporizing the vapor material 3. For example, the heat source 5 has the property of heating the material of the material 3 from room temperature to 400 t, at least from about 200 t to about 々. A plurality of heat sources 5 can be individually heated from the outside to control in detail, and the heat source 5 is set to be electrically heated by a nickel-chromium alloy wire. Preferably, the heat source 5 is covered like a sheath. A cover member 7 may be disposed in the opening of the container 4. The cover member 7 contains a metal, for example, containing the same material as the container, and has! More than 8 holes. The number of the holes 8, the size of the holes 8, and the arrangement of the holes 8 can be appropriately set depending on the size of the container 4, the type of the vapor 2 material 3, the number of heat sources 5, and the arrangement of the heat source 5. Hunting includes a cover member 7 to homogenize the distribution of the vaporized vaporized material released from the container 4. The cover member 7 may be provided with a plurality of members. Fig. 2 shows an arrangement example of the cover member 7. In Fig. 2, the cover members 7a and 7b are disposed at intervals above the heat source 5, and two upper and lower layers are disposed. With such a configuration, the distribution of the vaporized vapor deposition material 3 released from the container 4 can be made more uniform. Preferably, the cover member 7 includes heating to heat itself (especially the hole 8) 156321.doc • 9-t 201250037 mechanism (not shown). The mechanism is the same as the heat source 5, and is a sheath heater or a carbon heater. The crucible container 4 may further comprise a heat insulating member 9 which is separated from the heat source of the plurality of sources 5 and the heat source in the container 4 by a gap therebetween. The heat insulating member 9 is provided as a package. A shiny plate of a metal such as SUS or a plate containing a ceramic material having a low thermal conductivity, etc. The thickness and size of the heat insulating member 9 can be appropriately set according to the type of the heat source 5, the distance between the source and the heat source, and the like, exemplifying A cross-sectional view of the Guyi 4 including the heat insulating member 9. In Fig. 3, the heat insulating member 9 has a larger sectional area than the heat source 5, which at least blocks the heat released from the heat source 5 from moving in the horizontal direction. The heat insulating members 9 may be respectively disposed in the X direction and the Υ direction of the box-shaped container. By including the heat insulating member 9, the heat source used for heating from the heat can be prevented from being steamed to a position farther from the heat source. The mineral material is transferred. Thereby, the temperature rise of the vapor deposition material located around the heat source not used for heating can be suppressed, thereby suppressing deterioration. The true vapor deposition apparatus 1 preferably includes a vapor deposition material for measuring vaporization. Measurement unit of the quantity and control of heating control of the heat source (not shown) When the vapor deposition material 3 is heated to vaporize, the measuring unit can measure the amount of the vaporized vapor-deposited material released from the container 4. For example, the measuring portion is a crystal oscillation provided near the opening portion. The film forming rate monitor, etc. The control unit can heat-control the heat source 5 according to the change of the vaporized material measured by the measuring unit. For example, the heat source 5 is a resistance heating generated by energization. In the case of a heater, 'to keep the film formation rate at a fixed time' by setting the rate signal to PV (Process Value), setting the target value of the rate to SV (Setpoint Value), and As the heat -10- 156321.doc 8 201250037 source 5 of the heating source of the resistance heating heater current amount is set to MV (Manipulate Value, output) value of PID (Pr〇p〇rti〇n heart
Differentiation，比例積分微分）控制等而進行加熱控制。 繼而，對本實施形態之真空蒸鍵方法進行❸月。圖5係表 示說明本實施形態之真空蒸鍍方法之圖。 本實施形態之真空蒸鍍方法包括：將蒸鍍材料3填充至容 器4之步驟；及加熱蒸鍍材料3之第丨加熱步驟及第2加熱步 驟。 …、 (1)將蒸鍍材料3填充至容器4之步驟（圖5(a)) 以蒸鍍材料.3與熱源5接觸之方式，將蒸鍍材料3自開口部 1〇填充至容器4内。例如於將熱源5固定於容器底面之情形 時，將覆蓋所有熱源5之上部之程度（即掩埋熱源之程度）之 量的蒸鍵材料3填充於熱源5之周邊。又，於填充時，無需 以蒸鍍材料完全覆蓋熱源5，亦不必均等地填充於所有熱源 5。因此，亦可根據需要之蒸發量而僅將蒸鍍材料填充於一 部分熱源5之周邊。所填充之蒸鍍材料3設為若加熱則熔融 並蒸發或昇華之種類之有機材料（例如A丨q 3等）。通常以粉體 提供上述有機材料。 將基板6搬入至真空腔室2内，以基板6之板面與容器*之 開口部10對向之方式而使基板6保持於基板保持部（未圖 示）。其後，對真空腔室2内進行減壓。於真空腔室2内達到 特定真空度例如⑺一匕至丨❹一以時，停止減壓。 (2)第1加熱步驟（圖5(b)) 繼而，開始利用特定熱源5a之加熱。以蒸發量成為固定 15632l.doc 201250037 之方式控制熱源5a並使其發熱，或者以使所加熱之材料之 度成為固定之方式控制熱源5a並使其發熱。由熱源53釋 放之熱量傳遞至接觸於熱源5 a或位於熱源5 a附近之蒸鐘材 料3而使該蒸鍍材料3氣化。經氣化之蒸鍍材料丨丨自開口部 1〇釋放至容器4外，並附著於基板6之板面。自熱源5上部至 容器4上部（開口部丨0)為止隔有特定距離間隔。因此，藉由 熱源5a加熱而氣化之蒸鍍材料9於到達開口部1〇附近之前 於基板6之板面方向充分擴散並釋放至容器外。釋放至容器 外之經氣化之蒸鍍材料11之量為大致固定。 若藉由熱源5a使蒸链材料3不斷氣化，則接觸於熱源㈣ 位於熱源5a附近之蒸錢材料3減少。於使朝向蒸鐘材料化 =輸^量大致㈣之方式進行加熱之情形時1接觸於敎 源域位於熱源5a附近之蒸錢材料之量低於特定量，則釋 放至谷料之經氣化之蒸鍍材料之量減少。於第i加熱步 驟中，釋放至容器外之經氣化之蒸㈣ 之前實施第2加熱步驟。 里變動（心） 之= 加量熱開始時序可藉由根據所使用之蒸錄_ 之孰量等預蒸鐘材料3之氣化特性、自熱源域放 …里專預先叶异出達到上述 較佳為於以测量部寻疋量之時間而加以設定。 經氣化之蒸錢：之先二加熱步驟中之釋放至容器外之 (減少）之情形時，開㈣所測量之蒸錢材料之量變化 ⑺第2加熱步帮叫)熱步鄉。 於第2加熱步驟中停止利用熱源⑽行加熱，並且開始利 i5632l.doc J2· ⑧ 201250037 用其他熱源5b進行加熱。所謂停止加熱係指例如停止向熱 源5a供給電力，於加熱停止時，自熱源“之放熱亦可未完 全停止。熱源5b以朝向蒸鍍材料3之熱輸入量大致固定之= 式釋放熱。由熱源5b所釋放之熱傳遞至接觸於熱源扑或位 於熱源5b附近之蒸鍍材料3，並使該蒸鍍材料3氣化。經氣 化之蒸鍍材料11自開口部丨〇釋放至容器4外並附著於基板6 之板面。通過第1加熱步驟及第2加熱步驟，釋放至容器外 之經氣化之蒸鍵材料11之量大致固定。 可根據所配置之熱源5之數量而重複實施第2加熱步驟。 詳細而言，於藉由熱源5b之加熱而氣化並釋放至容器外之 蒸鍍材料之量U發生變化之前，停止熱源5b之加熱，並開 始熱源5c之加熱。開始熱源5c之加熱之時序較佳為根據測 量部之測量結果而設定。如此，以配置有複數個之熱源5 依序加熱蒸鐘材料3。 再者，於對真空腔室2内進行減壓之前，亦可包括於容器 4之開口部1〇配設蓋構件7之步驟。使用適當之機構將蓋構 件7固定於容器上。如圖6所示般，藉由包括蓋構件7而自容 器之出口分散，因此可使經氣化之蒸鍍材料丨丨之分佈均勻 化。 於上述蓋構件7包括加熱機構之情形時，經第丨加熱步驟 及第2加熱步驟加熱蓋構件7 ^由此，經氣化之蒸鍍材料^ ^ 通過蓋構件7之孔8時不會冷卻，因此可防止經氣化之蒸鍍 材料11附著於孔8而使孔8堵塞。 [第2實施形態] 156321.doc 13 201250037 本實施形態之真空蒸鍍裝置除收納蒸鍍材料之容器為雙 層結構以外，其他構成與第1實施形態相同。 圖7係表示本實施形態之容器之概略剖面圖。容器24包 括.第1容器24a，其收納蒸鍍材料且固定有複數個熱源25 ; 及第2容器24b，其覆蓋第！容器2乜之外側。 第1容器24a設為具有開口部之箱形狀，包含例如鈦或不 鏽鋼等金屬。於第1容器24a之内部，與第1實施形態相同地 配置有複數個熱源25。第2容器24b除設為可完全收納第1 谷器24a且具有較第1容器24a深之深度之大小以外，其他構 成與第1容器24a相同。第1容器24a及第2容器24b之大小可 適當設定。 第1容器24a以開口部朝向相同之方式配置於第2容器2仆 内。第1容器24a及第2容器24b以各自之開口部均朝向基板 之板面且各底面成為水平之方式配置於真空腔室内。 於第1容器24a及第2容器24b之各自之開口部分別配置有 蓋構件27a、27b。蓋構件27a、27b可使用與第i實施形態相 同者。蓋構件27a、27b之孔28a、28b於配置蓋構件27a、27b 時以不上下重疊之方式配置即可。孔28&及孔28b之數量及 大小亦可不同。藉由設為此種構成，可使自第2容器2仆釋 放之經氣化之蒸鍍材料之分佈均勻化。 [第3實施形態] 本實施形態之真空蒸鍍裝置除收納蒸鍍材料之容器包括 蒸發室以外，其他構成與第〗實施形態相同。 圖8係表示本實施形態之容器34之概略剖面圖。容器μ 15632 丨.doc -14- 201250037 包括與熱源35之數量相對應之數量之蒸發室31。蒸發室3ι 包含SUS等金屬或氧化鋁等陶瓷材料。有時使用熱導率較 低之陶瓷材料等形成向其他獨立空間之熱傳遞較低之結構 即可。蒸發室31於其内部形成有獨立之空間。蒸發室^具 有朝向容器34之開口部30開放之氣體通用口 32。 於本實施形態中，複數個熱源35分別個別地配置於蒸發 室内31。若藉由熱源35加熱蒸錢材料，則經氣化之蒸鐘材 料經由上述氣體通用口 32自開口部釋放至容器外。 第1加熱步驟中使用之熱源以存在於其周圍之蒸鍍材料 減少而使其露出之狀態降溫。根據本實施形態，熱源35配 置於蒸發室31内’因此可防止第2加熱步驟中經氣化之蒸鑛 材料附著於如上述般以露出狀態降溫之熱源或其附近。藉 此’第2加熱步驟中經氣化之蒸鑛材料效率佳地蒸鑛於基 板。 [第4實施形態] 本實施形態之真空蒸鍍裝置包括真空腔室、收納蒸鍍材 料之容器、及固定於容器内之熱源。 真空腔室係可自外部搬入搬出基板且可減壓地構成。於 真空腔室内’藉由基板保持部而將基板保持於上部。 圖9係表示第4實施形態之固定有熱源45之容器44之概略 剖面圖。圖係表示圖9所示之容器44之俯視概略圖。 容器44設為具有開口部4G之箱形狀，其包含例如欽或不 鏽鋼等金屬。、容器44以開口部4〇朝向基板之板面且底面成 為水平之方式配置於真空腔室内。 156321.doc -15- 201250037 於容器納有蒸鍍材料43之情形時，熱源45與蒸鐘 材料4 3之上表面隔開間隔而配置於與蒸鍍材料4 3之上表面 (開口部侧之表面）對向之位置。例如將熱源45固定於容器44 之側面。熱源45亦可沿上下方向或左右方向移動地固定於 容器44之側面。 熱源45設為藉由該熱源45加熱並氣化之諸材料49可朝 向開口部40移動之形狀。㈣為可對填充於容器44内之蒸 艘材料43之整個上表面進行加熱地配置熱源45。例如圖⑺ 所示’較佳為使細長之熱源45為婉蜒之配置。熱源45係可 釋放能夠使蒸鑛材料43氣化之熱量者。例如熱源45具有可 於自室溫至4〇代，至少自約2G(rc至彻。c之範圍内加熱蒸 鐘材料之性能。可自外部對熱源45進行加熱控制。詳細而 言’熱源45設為使用錦豸合金線等進行電阻加熱等。較佳 為熱源45係如護套式等般受到覆蓋。熱源45可為一體式， 或亦可為複數個熱源並列配置者。 亦可於容器441口部4〇配設有蓋構件47。蓋構件47包 含金屬，例如包含與容器相同之材質，且具有_以上之孔 48。孔48之數量、孔48之大小及孔48之配置等可根據容器 料之以、、蒸鍍材料43之種類、熱源45之數量及熱源45之 配置等而適田a又定。圖! i係表示蓋構件47之配置例。藉由 包括蓋構件47而可使釋放至容器外之經氣化之蒸鍍材料49 之分佈均勻化。 亦可與第1實施形態相同地配置有複數個蓋構件47。 較佳為蓋構件47包括對自身（特別是孔）進行加熱之加熱 156321.doc -16· 201250037 機構。加熱機構與例如熱源45相同地設為護套加熱器或碳 加熱器等。 較佳為真空蒸鍍裝置包括測量經氣化之蒸鍍材料之量之 測量部及對熱源進行加熱控制之控制部。 於加熱蒸鍍材料使其氣化時，測量部可測量自容器釋放 之經氣化之蒸鑛材料之量。例如測量部設為設置於開口部 附近之晶體振盪器式之成膜速率監視器等。 控制部可根據以測量部測量之經氣化之蒸鍍材料之變化 而對熱源45進行加熱控制。例如於熱源45設為藉由通電而 發電之電阻加熱加熱器之情形時，為使成膜速率保持於固 定’藉由將速率信號設為PV値、速率之目標值設為SV値' 作為熱源4 5之加熱源之電阻加熱加熱器之電流量設為μv 値之PID控制等而進行加熱控制。 繼而’對本實施形態之真空蒸鍍方法進行說明。 首先’將蒸鍍材料43自開口部40填充至容器44内《所填 充之蒸鍍材料43之量設為填充之後之蒸鍍材料43之上表面 不與熱源45接觸之程度。於熱源45可沿上下方向移動之情 形時，亦可將熱源45之高度調整為蒸鍍材料43之上表面不 與熱源45接觸之高度。所填充之蒸鍍材料43為若加熱則熔 融並蒸發或昇華之種類之有機材料（例如Alb等通常以粉 體提供上述有機材料。 將基板搬入至真空腔室内，以使基板面與容器之開口部 對向之方式使其保持於基板保持部。其後，對真空腔室内 進行減壓。於真空腔室内達到特定真空度例如 15632l.doc 17 201250037 時停止減壓。 繼而，開始利用熱源45進行加熱。由熱源45釋放之熱輻 射傳導至蒸鍍材料43之上表面，從而使該蒸鍍材料Μ氣 化。經氣化之蒸鍍材料49越過熱源45自開口部4〇釋放至容 器44外並附著於基板之板面。 使熱源45之發熱量逐漸增加即可。或者於熱源45可沿上 下方向移動之情形時，亦可以使熱源45之發熱量保持固定 且熱源45與蒸鍍材料43之上表面之距離成為大致固定之方 式，使熱源45之高度逐漸下降。 再者，於對真空腔室内進行減壓之前，亦可包括將蓋構 件47配設於容器之開口部之步驟。使用適當之機構將蓋構 件47固定於容器44上。 於上述蓋構件47包括加熱機構之情形時，於以熱源45進 行加熱時加熱蓋構件47。由此，經氣化之蒸鍍材料49通過 蓋構件47之孔48時不會冷卻，因此，可防止經氣化之蒸鍍 材料49附著於孔48而使孔48堵塞。 根據本實施形態’將熱源45配置於蒸鍍材料43之表面附 近進行加熱，因此與對蒸鍍材料整體進行加熱之情形相 比可以較少之熱1使蒸鍵材料4 3氣化。又，自熱源4 5釋 放之熱優先利用於使表面附近之蒸鍍材料43氣化，因此可 抑制位於距熱源45較遠之位置之蒸錄材料43之溫度上升， 從而可抑制劣化。 【圖式簡單說明】 圖1係第1實施形態之真空蒸鍍裝置之概略剖面圖； 156321.doc ⑧ 201250037 圖2係表示蓋構件之配置例之圖； 圖3係包括隔熱構件之容器之剖面圖； 圖4係包括隔熱構件之容器之立體圖； 圖係說明第!實施形態之真空蒸鍍方法之圖； 圖6係第i實施形態之包括蓋構件之容器之概略剖面圖； 圖7係第2貫施形態之容器之概略剖面圖； 圖8係第3貫施形態之容器之概略剖面圖； 圖9係第4實施形態之容器之概略剖面圖； 圖10係圖9中所示之容器之概略俯視圖； 圖11係第4實施形態之包括蓋構件之容器之概略剖面 圖；及 圖12係先前之真空蒸鍍裝置之部分概略剖面圖。 【主要元件符號說明】 1 真空蒸鍍裝置 2 真空腔室 3 、 43 、 53 蒸鍍材料 4、24、34、44 容器 5、5a、5b、5c、25、35、45、55 熱源 6 基板 7、7a、7b、27a、27b、47 蓋構件 8、28a、28b ' 48 孔 9 隔熱構件 10、40 開口部 Π ' 49 經氣化之蒸鍍材料 156321.doc -19- 201250037 24a 第1容器 24b 第2容器 31 蒸發室 32 氣體通用口 X、Y 方向 156321.doc -20·Differentiation, proportional integral differential) control, etc. for heating control. Then, the vacuum steaming method of the present embodiment is carried out for a month. Fig. 5 is a view showing the vacuum vapor deposition method of the embodiment. The vacuum vapor deposition method of this embodiment includes a step of filling the vapor deposition material 3 into the container 4, and a second heating step and a second heating step of heating the vapor deposition material 3. (1) a step of filling the vapor deposition material 3 into the container 4 (Fig. 5 (a)), the vapor deposition material 3 is filled from the opening portion 1 to the container 4 so that the vapor deposition material .3 is in contact with the heat source 5 Inside. For example, when the heat source 5 is fixed to the bottom surface of the container, the amount of the vapor-bonding material 3 covering the upper portion of all the heat sources 5 (i.e., the extent to which the heat source is buried) is filled around the heat source 5. Further, at the time of filling, it is not necessary to completely cover the heat source 5 with the vapor deposition material, and it is not necessary to uniformly fill all the heat sources 5. Therefore, only the vapor deposition material can be filled around the periphery of a part of the heat source 5 in accordance with the required evaporation amount. The vapor-deposited material 3 to be filled is an organic material (for example, A丨q 3 or the like) of a type which is melted and evaporated or sublimed when heated. The above organic materials are usually supplied in powder form. The substrate 6 is carried into the vacuum chamber 2, and the substrate 6 is held by the substrate holding portion (not shown) so that the plate surface of the substrate 6 faces the opening 10 of the container *. Thereafter, the inside of the vacuum chamber 2 is depressurized. When a specific degree of vacuum is reached in the vacuum chamber 2, for example, (7) to 丨❹, the pressure reduction is stopped. (2) First heating step (Fig. 5(b)) Then, heating by the specific heat source 5a is started. The heat source 5a is controlled to heat up so that the amount of evaporation becomes fixed 15632l.doc 201250037, or the heat source 5a is controlled to be heated so that the degree of the heated material becomes fixed. The heat released from the heat source 53 is transferred to the steaming material 3 which is in contact with the heat source 5a or in the vicinity of the heat source 5a to vaporize the vapor deposition material 3. The vaporized vapor deposition material is released from the opening 1 to the outside of the container 4 and adhered to the surface of the substrate 6. There is a certain distance interval from the upper portion of the heat source 5 to the upper portion (opening portion 丨0) of the container 4. Therefore, the vapor deposition material 9 vaporized by the heat source 5a is sufficiently diffused and released to the outside of the container in the direction of the board surface of the substrate 6 before reaching the vicinity of the opening portion 1A. The amount of vaporized vapor-deposited material 11 released to the outside of the container is substantially constant. When the vapor chain material 3 is continuously vaporized by the heat source 5a, the vapor-moulding material 3 which is in contact with the heat source (4) in the vicinity of the heat source 5a is reduced. When the heating material is heated toward the steaming material = the amount of the material is substantially (four), the amount of the steaming material that is in contact with the source region near the heat source 5a is less than a specific amount, and then the gasification is released to the grain. The amount of vapor deposition material is reduced. In the i-th heating step, the second heating step is carried out before being released to the vaporized vapor (4) outside the vessel. In the change (heart) = the amount of heat start timing can be achieved by the gasification characteristics of the pre-steaming material 3, such as the amount of steam used, and the self-heating source area. It is set by the time when the measurement department searches for the amount. The gasified steamed money: the amount of the steamed material measured by the opening (4) in the case of the first (second) heating step released to the outside of the container (7) The second heating step is called). In the second heating step, the heating by the heat source (10) is stopped, and the heating is started by the other heat source 5b. i5632l.doc J2·8 201250037. The term "stop heating" means, for example, that the supply of electric power to the heat source 5a is stopped. When the heating is stopped, the heat release from the heat source may not be completely stopped. The heat source 5b releases heat in a manner in which the amount of heat input to the vapor deposition material 3 is substantially constant. The heat released by the heat source 5b is transferred to the vapor deposition material 3 which is in contact with the heat source or located near the heat source 5b, and vaporizes the vapor deposition material 3. The vaporized vapor deposition material 11 is released from the opening portion to the container 4 The surface of the substrate 6 is adhered to the surface of the substrate 6. The amount of vaporized vapor-bonding material 11 released to the outside of the container is substantially constant by the first heating step and the second heating step. The number of heat sources 5 can be repeated according to the number of heat sources 5 arranged. The second heating step is carried out. Specifically, before the amount U of the vapor deposition material vaporized by the heat source 5b and released to the outside of the container is changed, the heating of the heat source 5b is stopped, and the heating of the heat source 5c is started. The timing of heating of the heat source 5c is preferably set according to the measurement result of the measuring unit. Thus, the steaming material 3 is sequentially heated by a plurality of heat sources 5 arranged. Further, before the pressure is reduced in the vacuum chamber 2 Or The step of arranging the cover member 7 in the opening 1 of the container 4. The cover member 7 is fixed to the container by a suitable mechanism. As shown in Fig. 6, the cover member 7 is dispersed from the outlet of the container. Therefore, the distribution of the vaporized vapor deposition material can be made uniform. When the cover member 7 includes the heating mechanism, the cover member 7 is heated by the second heating step and the second heating step. Since the vapor deposition material ^ ^ is not cooled by the hole 8 of the lid member 7, it is possible to prevent the vapor-deposited vapor deposition material 11 from adhering to the hole 8 and clogging the hole 8. [Second Embodiment] 156321.doc 13 201250037 The vacuum vapor deposition apparatus of the present embodiment has the same configuration as that of the first embodiment except that the container in which the vapor deposition material is housed has a double-layer structure. Fig. 7 is a schematic cross-sectional view showing the container of the embodiment. The container 24a is provided with a vapor deposition material and a plurality of heat sources 25 are fixed, and the second container 24b covers the outer side of the second container. The first container 24a has a box shape having an opening and contains, for example, titanium or stainless steel. Metal, etc. in the first container 24a In the same manner as in the first embodiment, a plurality of heat sources 25 are disposed. The second container 24b is configured to be able to completely accommodate the first barr 24a and has a depth deeper than that of the first container 24a. The size of the first container 24a and the second container 24b can be appropriately set. The first container 24a is disposed in the second container 2 so that the opening portion faces the same. The first container 24a and the second container 24b are respectively provided. The opening portions are disposed in the vacuum chamber so as to face the plate surface of the substrate, and the bottom surfaces thereof are horizontal. The cover members 27a and 27b are disposed in the respective openings of the first container 24a and the second container 24b. The cover members 27a and 27b are provided. The same as in the i-th embodiment can be used. The holes 28a and 28b of the cover members 27a and 27b may be disposed so as not to overlap each other when the cover members 27a and 27b are disposed. The number and size of the holes 28 & and the holes 28b may also vary. With such a configuration, the distribution of the vaporized vapor-deposited material discharged from the second container 2 can be made uniform. [Third Embodiment] The vacuum vapor deposition apparatus of the present embodiment has the same configuration as that of the first embodiment except that the container in which the vapor deposition material is housed includes the evaporation chamber. Fig. 8 is a schematic cross-sectional view showing the container 34 of the embodiment. The container μ 15632 丨.doc -14- 201250037 includes an evaporation chamber 31 in an amount corresponding to the number of heat sources 35. The evaporation chamber 31 includes a ceramic material such as SUS or a ceramic material such as alumina. It is sometimes possible to use a ceramic material having a lower thermal conductivity to form a structure having a lower heat transfer to other independent spaces. The evaporation chamber 31 has a separate space formed therein. The evaporation chamber has a gas universal port 32 that opens toward the opening 30 of the container 34. In the present embodiment, a plurality of heat sources 35 are individually disposed in the evaporation chamber 31. When the steamed material is heated by the heat source 35, the vaporized vapor material is released from the opening to the outside of the container through the gas universal port 32. The heat source used in the first heating step is cooled in a state where the vapor deposition material existing around it is reduced and exposed. According to the present embodiment, the heat source 35 is disposed in the evaporation chamber 31. Therefore, it is possible to prevent the vaporized ore material in the second heating step from adhering to the heat source or the vicinity thereof which is cooled in the exposed state as described above. By this, the vaporized ore material vaporized in the second heating step is efficiently vaporized on the substrate. [Fourth embodiment] The vacuum vapor deposition apparatus of the present embodiment includes a vacuum chamber, a container for storing the vapor deposition material, and a heat source fixed in the container. The vacuum chamber can be carried in and out from the outside and can be configured to be decompressed. The substrate is held in the upper portion by the substrate holding portion in the vacuum chamber. Fig. 9 is a schematic cross-sectional view showing a container 44 to which a heat source 45 is fixed in the fourth embodiment. The figure shows a top plan view of the container 44 shown in Fig. 9. The container 44 is formed in a box shape having an opening portion 4G, and contains a metal such as chin or stainless steel. The container 44 is disposed in the vacuum chamber such that the opening 4 〇 faces the plate surface of the substrate and the bottom surface is horizontal. 156321.doc -15-201250037 When the vapor deposition material 43 is contained in the container, the heat source 45 is disposed on the upper surface of the vapor deposition material 43 at a distance from the upper surface of the vapor material 43 (opening side) Surface) the position of the opposite direction. For example, the heat source 45 is fixed to the side of the container 44. The heat source 45 is also movably fixed to the side surface of the container 44 in the vertical direction or the left-right direction. The heat source 45 is formed in a shape in which the materials 49 heated and vaporized by the heat source 45 are movable toward the opening portion 40. (4) The heat source 45 is disposed to heat the entire upper surface of the vapor material 43 filled in the container 44. For example, as shown in Fig. (7), it is preferable that the elongated heat source 45 is disposed in a crucible. The heat source 45 is capable of releasing heat capable of vaporizing the vaporized material 43. For example, the heat source 45 has the property of heating the steaming material from room temperature to 4 ,, at least from about 2G (rc to dec. c. The heat source 45 can be heated and controlled from the outside. In detail, the heat source 45 is provided. The heat source 45 is preferably covered by a sheath type, etc., and the heat source 45 may be integrated, or may be arranged in parallel with a plurality of heat sources. The mouth member 4 is provided with a cover member 47. The cover member 47 comprises a metal, for example, containing the same material as the container, and has a hole 48 of _ above. The number of the holes 48, the size of the hole 48, and the arrangement of the holes 48 may be according to the container. The material, the type of the vapor deposition material 43, the number of heat sources 45, and the arrangement of the heat source 45, etc., are determined. Fig. 1 shows an arrangement example of the cover member 47. By including the cover member 47, The distribution of the vaporized vapor deposition material 49 released to the outside of the container is uniformized. A plurality of cover members 47 may be disposed in the same manner as in the first embodiment. Preferably, the cover member 47 includes itself (especially a hole). Heating heating 156321.doc -16· 201250037 Agency The heating means is, for example, a sheath heater, a carbon heater or the like, similarly to the heat source 45. Preferably, the vacuum evaporation apparatus includes a measuring unit that measures the amount of the vaporized material that has been vaporized and controls the heating control of the heat source. When the vapor deposition material is heated to vaporize, the measuring portion can measure the amount of the vaporized vaporized material released from the container. For example, the measuring portion is set to a crystal oscillator type film forming rate disposed near the opening portion. The control unit can heat-control the heat source 45 according to the change of the vaporized material that is vaporized by the measuring unit. For example, when the heat source 45 is a resistance heating heater that generates electricity by energization, In order to keep the film formation rate fixed, by setting the rate signal to PV値, the target value of the rate is set to SV値' as the heating source of the heat source 45, the current amount of the resistance heating heater is set to μv 値 PID control Then, the heating control is performed. Next, the vacuum vapor deposition method of the present embodiment will be described. First, the vapor deposition material 43 is filled into the container 44 from the opening 40. The amount of the vapor deposition material 43 filled is set to be filled. The surface of the vapor deposition material 43 after charging is not in contact with the heat source 45. When the heat source 45 is movable in the up and down direction, the height of the heat source 45 may be adjusted so that the upper surface of the vapor deposition material 43 is not in contact with the heat source 45. The height of the contact. The vapor deposition material 43 to be filled is an organic material of a type which is melted and evaporated or sublimated when heated (for example, Alb or the like generally supplies the above organic material as a powder. The substrate is carried into a vacuum chamber to make the substrate surface The vacuum holding chamber is decompressed while facing the opening of the container. Thereafter, the vacuum chamber is decompressed. When the vacuum chamber reaches a specific degree of vacuum, for example, 15632 l.doc 17 201250037, the pressure reduction is stopped. Heating is performed using heat source 45. The heat radiation released by the heat source 45 is conducted to the upper surface of the vapor deposition material 43, so that the vapor deposition material is vaporized. The vaporized material 49 is released from the opening portion 4A to the outside of the container 44 and adheres to the plate surface of the substrate. The heat generation amount of the heat source 45 can be gradually increased. Alternatively, when the heat source 45 is movable in the up-and-down direction, the heat generation amount of the heat source 45 can be kept constant, and the distance between the heat source 45 and the upper surface of the vapor deposition material 43 can be substantially fixed, and the height of the heat source 45 can be gradually lowered. Further, before the pressure reduction in the vacuum chamber, the step of disposing the cover member 47 on the opening of the container may be included. The cover member 47 is secured to the container 44 using a suitable mechanism. In the case where the cover member 47 includes a heating mechanism, the cover member 47 is heated while being heated by the heat source 45. Thereby, the vaporized vapor-deposited material 49 does not cool when passing through the hole 48 of the lid member 47. Therefore, it is possible to prevent the vapor-deposited vapor deposition material 49 from adhering to the hole 48 and clogging the hole 48. According to the present embodiment, since the heat source 45 is disposed in the vicinity of the surface of the vapor deposition material 43 and heated, the steamed material 4 3 can be vaporized with less heat than in the case where the entire vapor deposition material is heated. Further, since the heat released from the heat source 45 is preferentially used to vaporize the vapor deposition material 43 in the vicinity of the surface, it is possible to suppress the temperature rise of the vapor recording material 43 located farther from the heat source 45, thereby suppressing deterioration. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a vacuum vapor deposition apparatus according to a first embodiment; 156321.doc 8 201250037 Fig. 2 is a view showing an arrangement example of a cover member; Fig. 3 is a container including a heat insulating member; Fig. 4 is a perspective view of a container including a heat insulating member; Fig. 6 is a view showing a vacuum vapor deposition method according to a second embodiment; Fig. 6 is a schematic sectional view showing a container including a cover member according to an i-th embodiment; Figure 2 is a schematic cross-sectional view of a container in a third embodiment; Figure 9 is a schematic cross-sectional view of a container in a fourth embodiment; Figure 10 is a schematic view of the container in the fourth embodiment; Fig. 11 is a schematic cross-sectional view showing a container including a cover member according to a fourth embodiment; and Fig. 12 is a partially schematic cross-sectional view showing a vacuum vapor deposition device of the prior art. [Explanation of main component symbols] 1 Vacuum evaporation apparatus 2 Vacuum chambers 3, 43, and 53 Evaporation materials 4, 24, 34, 44 Containers 5, 5a, 5b, 5c, 25, 35, 45, 55 Heat source 6 Substrate 7 , 7a, 7b, 27a, 27b, 47 cover member 8, 28a, 28b ' 48 hole 9 heat insulating member 10, 40 opening portion 49 ' 49 vaporized material vaporized material 156321.doc -19- 201250037 24a first container 24b second container 31 evaporation chamber 32 gas common port X, Y direction 156321.doc -20·