KR100598717B1 - Source for depositing organic EL device comprising the haeting means arranged unequally - Google Patents

Source for depositing organic EL device comprising the haeting means arranged unequally Download PDF

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KR100598717B1
KR100598717B1 KR1020040011792A KR20040011792A KR100598717B1 KR 100598717 B1 KR100598717 B1 KR 100598717B1 KR 1020040011792 A KR1020040011792 A KR 1020040011792A KR 20040011792 A KR20040011792 A KR 20040011792A KR 100598717 B1 KR100598717 B1 KR 100598717B1
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cell
heating means
deposition source
deposition
source
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KR20050083308A (en
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이걸희
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엘지전자 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Abstract

본 발명은 유기 전계 발광 소자의 증착을 위한 증착원에 관한 것으로서, 특히 가열수단을 불균일하게 배치하여 증착원 내부의 온도를 일정하게 유지할 수 있도록 하는 증착원에 관한 것이다. 본 발명에 따른 증착원은, 증착재료를 내부에 수용하며, 기화된 증착재료가 배출되도록 노즐부가 상판에 형성된 셀; 및 상기 셀의 주변을 전 높이에 걸쳐 나선형으로 감싸되, 하부보다 상부가 조밀한 상태로 배치된 가열수단을 포함하는 것을 특징으로 한다. 상기 증착원은, 상기 가열수단을 둘러싸도록 형성된 외벽을 더 포함하는 것이 바람직하며, 상기 셀 및 가열수단의 상판을 덮도록 형성된 커버를 더 포함하는 것도 바람직하다. 또한, 상기 증착원은, 상기 셀 및 가열수단의 사이에 위치하며, 상기 셀의 하부만을 둘러싸도록 형성된 내벽을 더 포함하는 것이 바람직하다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition source for deposition of an organic electroluminescent device, and more particularly, to a deposition source for uniformly arranging heating means to maintain a constant temperature inside the deposition source. The deposition source according to the present invention includes a cell accommodating a deposition material therein, and a nozzle portion formed on the upper plate to discharge vaporized deposition material; And heating means helically wrapped around the cell over the entire height, the heating means being disposed at a higher density than the lower portion. Preferably, the deposition source further includes an outer wall formed to surround the heating means, and further includes a cover formed to cover the upper plate of the cell and the heating means. In addition, the deposition source, preferably located between the cell and the heating means, further comprises an inner wall formed to surround only the lower portion of the cell.

증착원, 가열수단Evaporation source, heating means

Description

불균일하게 배치된 가열수단을 포함하는 유기 전계 발광 소자의 증착원{Source for depositing organic EL device comprising the haeting means arranged unequally}Source for depositing organic EL device comprising the haeting means arranged unequally}

도 1은 종래의 증착원에 대한 단면도.1 is a cross-sectional view of a conventional deposition source.

도 2는 본 발명의 바람직한 실시예에 따른 증착원에 대한 단면도.2 is a cross-sectional view of a deposition source according to a preferred embodiment of the present invention.

본 발명은 유기 전계 발광 소자의 증착을 위한 증착원에 관한 것으로서, 특히 가열수단을 불균일하게 배치하여 증착원 내부의 온도를 일정하게 유지할 수 있도록 하는 증착원에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition source for deposition of an organic electroluminescent device, and more particularly, to a deposition source for uniformly disposing heating means to maintain a constant temperature inside the deposition source.

도 1은 종래의 유기 전계 발광 소자의 증착원의 단면도이다. 도시된 증착원은 셀(cell)형 증착원이며, 원통형의 셀(1)은 그 내부에 증착재료(M1)를 보유한다.1 is a cross-sectional view of a deposition source of a conventional organic electroluminescent device. The illustrated deposition source is a cell-type deposition source, and the cylindrical cell 1 holds the deposition material M1 therein.

셀(1) 내부에 보유된 증착재료(M1)는 셀(1) 외부와 일정한 간격을 둔 채로 나선형으로 배치되며 셀(1) 외부를 둘러싼 가열수단(2)으로부터 나오는 열에 의해 가열되어 기화된다. 기화된 증착재료(M2)는 노즐부(1b)를 통과하여 증착원의 상부에 위치한 기판에 증착이 된다. The vapor deposition material M1 retained inside the cell 1 is helically disposed at regular intervals from the outside of the cell 1 and is heated and vaporized by heat from the heating means 2 surrounding the outside of the cell 1. The vaporized deposition material M2 passes through the nozzle portion 1b and is deposited on a substrate located above the deposition source.

가열수단(2)은 전기저항값이 높은 물질로서 전류를 인가시킴으로서 열이 발생된다. 가열수단(2)으로부터 발생된 열은 복사되어 셀(1) 내부를 가열한다. 가열수단(2)은 셀(1)의 전 높이에 대하여 고르게 복사열을 가하게 되나, 셀(1)의 상판(1a) 및 노즐부(1b)는 가열수단(2)에 의하여 둘러싸여 있지 않으므로 복사열이 공급되지 않는다.The heating means 2 generates heat by applying a current as a substance having a high electrical resistance value. Heat generated from the heating means 2 is radiated to heat the inside of the cell 1. The heating means 2 applies radiant heat evenly with respect to the entire height of the cell 1, but since the top plate 1a and the nozzle part 1b of the cell 1 are not surrounded by the heating means 2, radiant heat is supplied. It doesn't work.

따라서, 셀의 상판(1a) 및 노즐부(1b)에는 상대적으로 낮은 온도가 형성되며, 복사열에 의해 기화된 증착재료 증기(M2)가 낮은 온도의 노즐부(1b)를 통해 방출되는 과정에서 일부가 노즐부(1b)에 미리 증착이 된다. 증착재료 증기(M2)가 노즐부(1b)에 증착되는 현상이 반복됨에 따라 노즐부(1b)는 증착재료에 의해 막히게 되며, 이에 따라 증착이 중단되는 문제점이 발생한다.Therefore, a relatively low temperature is formed in the upper plate 1a and the nozzle portion 1b of the cell, and partly in the process of evaporating vapor deposition material vapor M2 by the radiant heat through the low temperature nozzle portion 1b. Is deposited in advance on the nozzle portion 1b. As the phenomenon in which the deposition material vapor M2 is deposited on the nozzle unit 1b is repeated, the nozzle unit 1b is blocked by the deposition material, thereby causing a problem in that deposition is stopped.

본 발명이 이루고자 하는 기술적 과제는, 셀 상부를 통해 외부로 발산되는 열손실을 상쇄시키기 위하여 셀 상부에 상대적으로 더 많은 열을 가함으로서 셀 내부 온도가 전체적으로 일정하게 유지되도록 하고, 이에 따라 노즐부 주변에서 증착재료 증기가 응고되는 현상이 방지되도록 하는 증착원을 제공하는데 있다.The technical problem to be achieved by the present invention is to apply relatively more heat to the upper part of the cell in order to offset the heat loss dissipated to the outside through the upper part of the cell so that the internal temperature of the cell is kept constant throughout the nozzle portion, thereby The present invention provides a deposition source to prevent the phenomenon of vapor deposition of vapor deposition material.

상기 기술적 과제를 해결하기 위한 본 발명에 따른 증착원은, 증착재료를 내부에 수용하며, 기화된 증착재료가 배출되도록 노즐부가 상판에 형성된 셀; 및 상기 셀의 주변을 전 높이에 걸쳐 나선형으로 감싸되, 하부보다 상부가 조밀한 상태로 배치된 가열수단을 포함하는 것을 특징으로 한다.Deposition source according to the present invention for solving the above technical problem, the cell receiving the deposition material therein, the cell formed in the nozzle portion on the top plate to discharge the vaporized deposition material; And heating means helically wrapped around the cell over the entire height, the heating means being disposed at a higher density than the lower portion.

상기 증착원은, 상기 가열수단을 둘러싸도록 형성된 외벽을 더 포함하는 것이 바람직하며, 상기 셀 및 가열수단의 상판을 덮도록 형성된 커버를 더 포함하는 것도 바람직하다.Preferably, the deposition source further includes an outer wall formed to surround the heating means, and further includes a cover formed to cover the upper plate of the cell and the heating means.

또한, 상기 증착원은, 상기 셀 및 가열수단의 사이에 위치하며, 상기 셀의 하부만을 둘러싸도록 형성된 내벽을 더 포함하는 것이 바람직하다.In addition, the deposition source, preferably located between the cell and the heating means, further comprises an inner wall formed to surround only the lower portion of the cell.

이하 첨부도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설명한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 바람직한 실시예에 따른 증착원의 단면도로서, 본 실시예에 따른 증착원은 셀(11), 가열수단(12), 커버(13), 외벽(14) 및 내벽(15)으로 구성되어 있다.2 is a cross-sectional view of a deposition source according to a preferred embodiment of the present invention, wherein the deposition source according to the present embodiment includes a cell 11, a heating means 12, a cover 13, an outer wall 14, and an inner wall 15. It consists of.

셀(11)은 원통형으로 형성되어 있으며, 그 내부에는 증착재료(M1)가 공급된다. 셀의 상판(11a)에는 노즐부(11b)가 형성되어 있으며, 이를 통하여 기화된 증착재료 증기(M2)가 배출된다. The cell 11 is formed in a cylindrical shape, and the vapor deposition material M1 is supplied therein. The nozzle portion 11b is formed on the upper plate 11a of the cell, through which the vaporized deposition material vapor M2 is discharged.

셀(11)의 재질은 증착재료의 특성과 산화 특성등을 고려하여 선택되며, 주로 Ti 또는 SUS가 사용된다.The material of the cell 11 is selected in consideration of the characteristics of the deposition material and the oxidation characteristics, mainly Ti or SUS is used.

가열수단(12)은 스프링 형태로 구성된다. 즉, 셀(11)과 일정 간격을 유지한 채로 셀(11)을 감싸며, 셀(11)의 전 높이에 걸쳐 나선형으로 상승되도록 배치된다. 가열수단(12)의 간격 즉, 피치는 상승방향으로 향할수록 그 간격이 줄어드는 형상으로 되어, 셀(11)의 하부보다 상부에서 더 조밀한 상태로 배치된다.The heating means 12 is configured in the form of a spring. That is, the cell 11 is wrapped while being kept at a predetermined distance from the cell 11 and disposed to spiral up over the entire height of the cell 11. The space | interval of the heating means 12, ie, pitch becomes a shape where the space | interval reduces as it goes to an upward direction, and is arrange | positioned in the denser state from the upper part than the lower part of the cell 11.

가열수단(12)은 전기저항값이 큰 재료로 이루어지며, 전류가 인가됨에 따라 저항열이 발생된다.The heating means 12 is made of a material having a large electric resistance value, and heat of resistance is generated as a current is applied.

커버(13)는 노즐부(11b)에 대응되는 위치를 제외하고, 셀(11) 및 가열수단(12)을 덮도록 형성된 부재이다. 이는 상부로 배출되는 열을 감소시키기 위하여 셀(11)의 상판(11a)의 상부에 위치된다.The cover 13 is a member formed to cover the cell 11 and the heating means 12 except for the position corresponding to the nozzle portion 11b. It is located on top of the top plate 11a of the cell 11 to reduce the heat discharged to the top.

외벽(14)은 가열수단(12)을 둘러싸도록 형성되어, 가열수단(12)에서 발생되는 복사열이 외부로 방출되지 않고, 셀(11) 쪽으로 향할 수 있도록 하는 기능을 수행한다.The outer wall 14 is formed to surround the heating means 12, so that radiant heat generated from the heating means 12 can be directed toward the cell 11 without being discharged to the outside.

내벽(15)은 셀(11)과 가열수단(12) 사이에 위치하며, 셀(11)의 하부에만 형성되어, 셀(11)의 하부로 가는 복사열을 감소시키는 기능을 수행한다.The inner wall 15 is located between the cell 11 and the heating means 12, is formed only in the lower portion of the cell 11, and serves to reduce the radiant heat to the lower portion of the cell (11).

본 실시예에 따른 증착원은, 가열수단의 피치가 셀(11)의 상부로 갈수록 감소되어 가열수단(12)이 조밀하게 배치되는 형상이므로, 상대적으로 셀(11)의 상부에는 많은 양의 복사열이 전달되며, 셀(11)의 하부에는 적은 양의 복사열이 전달된다.In the deposition source according to the present embodiment, since the pitch of the heating means decreases toward the upper portion of the cell 11 and the heating means 12 are densely arranged, a relatively large amount of radiant heat is placed on the upper portion of the cell 11. Is transferred, and a small amount of radiant heat is transferred to the bottom of the cell (11).

셀(11)의 상판(11a) 및 노즐부(11b)는 가열수단(12)에 의해 둘러싸여 있지 않으므로, 열이 셀(11)의 상판(11a)을 통해 외부로 방출되나, 가열수단(12)을 셀(11)의 상부에 더 많은 열이 공급되도록 배치함으로서 방출되는 열과 더 많이 공급된 열이 상쇄되어 결국 셀(11) 내부는 전체적으로 일정한 온도가 유지되는 상태가 된다.Since the top plate 11a and the nozzle portion 11b of the cell 11 are not surrounded by the heating means 12, heat is released to the outside through the top plate 11a of the cell 11, but the heating means 12 By disposing the heat supply to the upper part of the cell 11, the emitted heat and the supplied heat are canceled so that the inside of the cell 11 maintains a constant temperature as a whole.

또한, 외부로 방출되는 열을 감소시키기 위한 보조적인 수단으로 커버(13)를 셀(11) 및 가열수단(12)에 덮는 것이 바람직하다. 커버(13)에 의해 셀(11)의 상부 로 방출되는 열이 차단됨으로서, 셀(11) 상부의 온도가 감소되는 것이 방지된다.In addition, it is preferable to cover the cell 11 and the heating means 12 with the cover 13 as an auxiliary means for reducing the heat released to the outside. The heat emitted to the top of the cell 11 by the cover 13 is blocked, thereby preventing the temperature of the top of the cell 11 from being reduced.

셀(11)의 하부로 공급되는 열을 감소시키기 위해 내벽(15)을 셀(11)과 가열수단(12) 사이에 하부 부분에만 위치시키는 것도 바람직하다. 이를 통해 상대적으로 셀(11)의 하부 부분으로의 열전달을 감소시킴으로서 셀(11) 내부의 온도를 전체적으로 일정하게 유지하는 것이 가능해진다.It is also preferable to place the inner wall 15 only in the lower part between the cell 11 and the heating means 12 in order to reduce the heat supplied to the bottom of the cell 11. This makes it possible to keep the temperature inside the cell 11 constant throughout by relatively reducing heat transfer to the lower part of the cell 11.

이상에서 설명한 바와 같이, 본 발명에 의한 증착원은 가열수단을 셀의 하부보다 상부에 조밀하게 배치함으로서 상부로 공급되는 열을 상대적으로 증가시켜 상부에서 외부로 방출되는 열과 상쇄되도록 하여 셀의 내부가 균일한 온도로 유지되도록 하고, 이에 따라 기화된 증착재료 증기가 노즐부에 응고되는 것을 방지하는 효과를 갖는다.As described above, the deposition source according to the present invention by densely disposing the heating means in the upper portion than the lower portion of the cell to increase the heat supplied to the upper portion to offset the heat emitted from the upper to the outside to the inside of the cell It is maintained at a uniform temperature, and thus has an effect of preventing vaporized vapor deposition material vapor from solidifying to the nozzle portion.

Claims (4)

증착재료를 내부에 수용하며, 기화된 증착재료가 배출되도록 노즐부가 상판에 형성된 셀; 및 A cell accommodating the deposition material therein and having a nozzle portion formed on the upper plate to discharge vaporized deposition material; And 상기 셀의 주변을 전 높이에 걸쳐 나선형으로 감싸되, 하부보다 상부가 조밀한 상태로 배치된 가열수단을 포함하는 것을 특징으로 하는 증착원.And a heating means wrapped around the cell in a spiral over the entire height, the heating means disposed in a denser state than the lower portion. 제 1 항에 있어서, 상기 증착원은 The method of claim 1, wherein the deposition source is 상기 가열수단을 둘러싸도록 형성된 외벽을 더 포함하는 것을 특징으로 하는 증착원.Deposition source further comprises an outer wall formed to surround the heating means. 제 1 항에 있어서, 상기 증착원은The method of claim 1, wherein the deposition source is 상기 셀 및 가열수단의 상판을 덮도록 형성된 커버를 더 포함하는 것을 특징으로 하는 증착원.Deposition source further comprises a cover formed to cover the top plate of the cell and the heating means. 제 1 항에 있어서, 상기 증착원은 The method of claim 1, wherein the deposition source is 상기 셀 및 가열수단의 사이에 위치하며, 상기 셀의 하부만을 둘러싸도록 형성된 내벽을 더 포함하는 것을 특징으로 하는 증착원. And an inner wall positioned between the cell and the heating means, the inner wall being formed so as to surround only the lower part of the cell.
KR1020040011792A 2004-02-23 2004-02-23 Source for depositing organic EL device comprising the haeting means arranged unequally KR100598717B1 (en)

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WO2017111384A1 (en) 2015-12-23 2017-06-29 주식회사 포스코 Vacuum deposition device for high-speed coating

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KR102221552B1 (en) * 2020-07-15 2021-03-02 삼성디스플레이 주식회사 Deposition source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017111384A1 (en) 2015-12-23 2017-06-29 주식회사 포스코 Vacuum deposition device for high-speed coating

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