TW201248337A - Light exposure device and light shield board - Google Patents

Light exposure device and light shield board Download PDF

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Publication number
TW201248337A
TW201248337A TW101116688A TW101116688A TW201248337A TW 201248337 A TW201248337 A TW 201248337A TW 101116688 A TW101116688 A TW 101116688A TW 101116688 A TW101116688 A TW 101116688A TW 201248337 A TW201248337 A TW 201248337A
Authority
TW
Taiwan
Prior art keywords
microlens array
light
pattern
exposure
microlens
Prior art date
Application number
TW101116688A
Other languages
English (en)
Chinese (zh)
Inventor
Toshinari Arai
Kazushige Hashimoto
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of TW201248337A publication Critical patent/TW201248337A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW101116688A 2011-05-16 2012-05-10 Light exposure device and light shield board TW201248337A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011109765A JP5825470B2 (ja) 2011-05-16 2011-05-16 露光装置及び遮光板

Publications (1)

Publication Number Publication Date
TW201248337A true TW201248337A (en) 2012-12-01

Family

ID=47176745

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101116688A TW201248337A (en) 2011-05-16 2012-05-10 Light exposure device and light shield board

Country Status (3)

Country Link
JP (1) JP5825470B2 (ja)
TW (1) TW201248337A (ja)
WO (1) WO2012157409A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6131607B2 (ja) * 2013-01-21 2017-05-24 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
JP6497056B2 (ja) * 2014-12-12 2019-04-10 三菱電機株式会社 液晶表示装置の製造方法
JP6428839B2 (ja) * 2017-04-20 2018-11-28 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
CN115457299B (zh) * 2022-11-14 2023-03-31 中国科学院光电技术研究所 传感芯片投影光刻机匹配方法
CN118657110B (zh) * 2024-08-21 2024-11-29 合肥晶合集成电路股份有限公司 一种版图结构的形成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3348467B2 (ja) * 1993-06-30 2002-11-20 株式会社ニコン 露光装置及び方法
JPH09244255A (ja) * 1996-03-13 1997-09-19 Nikon Corp 液晶用露光装置
JP4092753B2 (ja) * 1997-10-22 2008-05-28 株式会社ニコン 走査型露光装置及び走査露光方法
JP2004335864A (ja) * 2003-05-09 2004-11-25 Nikon Corp 露光装置及び露光方法
JP2005221596A (ja) * 2004-02-04 2005-08-18 Dainippon Screen Mfg Co Ltd パターン描画装置
US7061581B1 (en) * 2004-11-22 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4773160B2 (ja) * 2005-08-24 2011-09-14 株式会社ブイ・テクノロジー 露光装置
JP2007108559A (ja) * 2005-10-17 2007-04-26 Nikon Corp 走査型露光装置及びデバイスの製造方法
JP4764237B2 (ja) * 2006-04-11 2011-08-31 株式会社ブイ・テクノロジー 露光装置
JP2008197226A (ja) * 2007-02-09 2008-08-28 Fujifilm Corp ポジ型感光性組成物及びパターン形成方法
US8009269B2 (en) * 2007-03-14 2011-08-30 Asml Holding N.V. Optimal rasterization for maskless lithography
JP5034632B2 (ja) * 2007-04-12 2012-09-26 株式会社ニコン パターンジェネレータ、パターン形成装置及びパターン生成方法
KR20090040531A (ko) * 2007-10-22 2009-04-27 삼성전자주식회사 노광 장치 및 그 제어방법
JP5224341B2 (ja) * 2008-05-15 2013-07-03 株式会社ブイ・テクノロジー 露光装置及びフォトマスク
JP5493403B2 (ja) * 2008-06-19 2014-05-14 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5190609B2 (ja) * 2008-08-21 2013-04-24 株式会社ブイ・テクノロジー 露光装置及びそれに使用するフォトマスク
JP5382412B2 (ja) * 2008-10-24 2014-01-08 株式会社ブイ・テクノロジー 露光装置及びフォトマスク
JP5397748B2 (ja) * 2009-02-25 2014-01-22 株式会社ニコン 露光装置、走査露光方法、およびデバイス製造方法
JP5760292B2 (ja) * 2011-02-28 2015-08-05 株式会社ブイ・テクノロジー マイクロレンズアレイを使用した露光装置

Also Published As

Publication number Publication date
WO2012157409A1 (ja) 2012-11-22
JP2012242454A (ja) 2012-12-10
JP5825470B2 (ja) 2015-12-02

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