TW201246516A - Chip type tandem electrostatic suppression protection element and manufacturing method thereof - Google Patents
Chip type tandem electrostatic suppression protection element and manufacturing method thereof Download PDFInfo
- Publication number
- TW201246516A TW201246516A TW100116776A TW100116776A TW201246516A TW 201246516 A TW201246516 A TW 201246516A TW 100116776 A TW100116776 A TW 100116776A TW 100116776 A TW100116776 A TW 100116776A TW 201246516 A TW201246516 A TW 201246516A
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy
- electrode
- type
- air
- protection element
- Prior art date
Links
- 230000001629 suppression Effects 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 20
- 230000003068 static effect Effects 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 239000002861 polymer material Substances 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000003353 gold alloy Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- -1 Chin Inorganic materials 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 239000003822 epoxy resin Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910018054 Ni-Cu Inorganic materials 0.000 claims 1
- 229910018481 Ni—Cu Inorganic materials 0.000 claims 1
- 229910001260 Pt alloy Inorganic materials 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 208000028659 discharge Diseases 0.000 description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Elimination Of Static Electricity (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100116776A TW201246516A (en) | 2011-05-13 | 2011-05-13 | Chip type tandem electrostatic suppression protection element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100116776A TW201246516A (en) | 2011-05-13 | 2011-05-13 | Chip type tandem electrostatic suppression protection element and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201246516A true TW201246516A (en) | 2012-11-16 |
| TWI411099B TWI411099B (enExample) | 2013-10-01 |
Family
ID=48094567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100116776A TW201246516A (en) | 2011-05-13 | 2011-05-13 | Chip type tandem electrostatic suppression protection element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201246516A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI616044B (zh) * | 2016-08-02 | 2018-02-21 | 久尹股份有限公司 | 靜電保護元件及其製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI281842B (en) * | 2005-01-11 | 2007-05-21 | Ta I Technology Co Ltd | Manufacture method for multiple-circuit chip with protruding electrode |
| US7733620B2 (en) * | 2006-07-19 | 2010-06-08 | Ta-I Technology Co., Ltd | Chip scale gas discharge protective device and fabrication method of the same |
| TWM361840U (en) * | 2008-07-23 | 2009-07-21 | Ta I Technology Co Ltd | Chip type electric static discharge (ESD) protection element with gas chamber covering micro gap between electrodes |
-
2011
- 2011-05-13 TW TW100116776A patent/TW201246516A/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI616044B (zh) * | 2016-08-02 | 2018-02-21 | 久尹股份有限公司 | 靜電保護元件及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI411099B (enExample) | 2013-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4697306B2 (ja) | 静電気対策部品およびその製造方法 | |
| KR20130142951A (ko) | 후막 전극의 제조 방법 | |
| US7733620B2 (en) | Chip scale gas discharge protective device and fabrication method of the same | |
| JP5206415B2 (ja) | 静電気対策部品およびその製造方法 | |
| JP6864113B2 (ja) | 感電保護素子、その製造方法及びこれを具備した携帯用電子装置 | |
| CN102792534B (zh) | 静电保护部件及其制造方法 | |
| TW201021346A (en) | Over-voltage protecting device and method for making thereof | |
| JP2009267202A (ja) | 静電気対策部品 | |
| CN100568409C (zh) | 可变电阻 | |
| CN218336527U (zh) | 静电抑制器 | |
| JP6079880B2 (ja) | Ｅｓｄ保護装置 | |
| CN105340141B (zh) | Esd保护装置 | |
| JP5884949B2 (ja) | サージ保護デバイス、その製造方法、および、それを含む電子部品 | |
| TWI253881B (en) | Chip-type micro air-gap discharge protection device and manufacturing method thereof | |
| CN101202422A (zh) | 芯片型空气放电保护组件及其制备方法 | |
| TWI303477B (enExample) | ||
| JP2010027636A (ja) | 静電気対策部品 | |
| CN107086097B (zh) | 贴片电阻元件以及贴片电阻元件组件 | |
| JP2010182560A (ja) | 電子部品の製造方法 | |
| JP2016076426A (ja) | 静電気対策素子 | |
| TWI278985B (en) | A low trigger voltage ESD protection device | |
| CN201107849Y (zh) | 具有中空气隙过电压保护机构的rc滤波组件 | |
| TW517423B (en) | Transient over-voltage protection device structure | |
| TWI695402B (zh) | 片式熔斷器及其製造方法 | |
| KR101027122B1 (ko) | 정전방전 보호소자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |