TWI253881B - Chip-type micro air-gap discharge protection device and manufacturing method thereof - Google Patents

Abstract

A chip-type micro air-gap discharge protection device and manufacturing method thereof are provided. A ceramic substrate is covered with a plurality of layers including two separated discharge electrodes. A hollowed air chamber is formed in a micro gap between the two discharge electrodes, so as to construct a micro air-gap discharge protection device.

Description

1253881

V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method of fabricating a wafer-type micro air gap discharge protection element, and more particularly to a method of forming a small gap between two main discharge electrodes. The middle air chamber constitutes a micro air gap discharge protection ς 曰 型 type discharge protection element and a manufacturing method thereof.曰曰[Prior Art] Over-voltage protection or discharge protection components have been widely used in various electronic system products such as telephones, fax machines, and data machines, especially in the lines of electronic and audio-visual equipment, to avoid voltage abnormalities or Electrostatic discharge (ESD) causes damage to components caused by damage to components such as electronic devices. Among them, the protection design of electrostatic discharge has almost become a common requirement on electronic devices. • In order to meet the requirements of electrostatic discharge for electronic products, the industry has developed a wide range of ESD protection components, such as Transient Voltage Suppress Diode (TVSD) components, laminated voltage A varistor (Mul ti_Layer Vari st〇r, MLV) component is provided for use as a line protection design; and in the line s, the operator has also applied such as shielding (ie 1 di ng ) protection, gap discharge ( Gap Discharge), Capacitor charging and discharging, etc., to solve the design problem of electrostatic discharge protection. In many solutions to the electrostatic discharge protection design, in the case of a printed circuit board layout (PC B Layout), a gap discharge electrode structure as shown in FIG. 1A is designed directly at the electrostatic discharge protection set point, and is printed on the circuit. The substrate is manufactured with the electrostatic discharge protection designer, which is the most costly

V. DESCRIPTION OF THE INVENTION (2) Low mode has also been widely used in many designs. Figure 1A shows a printed circuit board 1〇, and a line is formed on the line nj1 where the discharge protection mechanism is to be provided. At the time of the factory, the shape of the gap 13 is #, and then another sharp-shaped electric electrode J is grounded (Ground); 2 J test 1B, t is caused by electric shock i5, etc. If the electrostatic discharge indicates that the curve 2〇 appears in the line i1, the gap 13 between the main discharge electrodes 12a and 1bb generates a hit/beck phenomenon, so the amplitude of the abnormal voltage must be limited to The curve 丨 2 1 kg is acceptable to the extent that it protects the line 11. With the design of the power generation and discharge protection 'after analysis t ' we can find that it has the following disadvantages: (1) gap in the technique f 13 width size production is limited by the static = "capacity limit, so to make this gap wide, small, there will be problems that cannot be achieved. (2) Since the gap 1 q production scale, the I degree size can not be made very small, the breakdown voltage relative to the gap width ^ person inch will be high, so the protection of the circuit is applicable. For circuits that require lower breakdown voltage protection, it will not be used to understand, deduct, and lower the protection requirements of porcelain semiconductors. 'Use pure semiconductors or ceramics, and have more absorbers (SUrge abS〇rber) components. Has been developed Γ 1) a too surnamed two geeks, is as follows: On # #许许愿愿2 0 04一31 01 6: With a relevant _ 』 a "surge absorber", as in the first 2 A picture, package

Page 6 1253881 V. DESCRIPTION OF THE INVENTION (3) A cylindrical ceramic component 2 is provided, the surface of which is covered with a conductive film 3 and has a pair of electrodes 5 and 6, and a cylindrical ceramic 70 coated with a conductive film. A narrow and deep recess 7 is formed in the member 2, and the outer side of the structure is sealed by the glass tube 8. The space inside the glass tube 8 is an inert gas such as argon (A r ). (2) International Patent W〇2 0 04/ 07 76 3 2 (PCT/JP20 04/0 02445): It is not disclosed as a “surge absorber” as shown in Figure 2B, including a cylinder type The ceramic insulating tube 15 is filled with gas, and the sealing surge absorbs 70 pieces 11. The end faces of the insulating tube 15 have a terminal electrode 16. The wave absorbs 70 pieces of 1 1 cylindrical insulating material. The whole is covered with a conductive film 2, and has a discharge gap 中央 at the center portion thereof, and is a conductive buffer material 17 between the terminal electrode 16 and the surge absorbing element η. (3) US Patent No. 6, 731, 490 Β 2 (Patent date is May 4, 2-4): The "surge absorber" disclosed is as shown in the figure, including The terminal electrode 212, the glass tube 213, and the surge absorbing element 211. The surface of the surge absorbing member 211 has a conductive film 21 〇 and a discharge gap. The glass tube 2 1 3 is formed into a square tube filled with an inert gas g. 'Breakage voltage is high, I use "=receive!! It has the difficulty of miniaturization, collapse circuit, etc., which requires lower breakdown voltage protection.] The invention has the effect of solving the influence of the surge on the μμμμ μ. Disadvantages 'The present invention is intended to provide a type of discharge protection element,

Page 7 1253881 V. Description of invention

^ Ϊ I is realized by the manufacturing technology of the wafer, so it can be made into a wafer type, so that the port is suitable for the current electric circuit. The width of the discharge protection element produced by the wafer manufacturing technology of the present invention can be made small, so that the collapse voltage of the crucible is not too high compared with the gap. The protection applied to various circuits is another object of the present invention. This kind of discharge protection component of the AI-A wafer type can not only be made into a small one, but also can be made into a surface adhesion 35, which is extremely convenient to use, and another purpose of the month. Bean system=^ Invented by the discharge protection component, the discharge protection component is much simplified because of its simple structure, and the cost is greatly reduced due to the result of the system=large vonization. The detailed configuration of the invention, the steps of the manufacturing method, and the functions and functions thereof will be further described in the following description of the drawings. [Detailed Embodiments of the Invention] For the structure of the device, please see 苐3 A [a) to 41 (b). The embodiments are merely illustrative of the possible embodiments of the present invention, and the present invention is not to be understood as being limited by the embodiments, and those skilled in the art can naturally change the embodiments without departing from the present invention. The spirit and scope of the invention. ^ [Example 1]

Referring to Figures 3A(a) to 3j(b), first, the first terminal electrode connecting conductors 301a and 301b are formed on one of the ceramic substrates 3 (e.g., 3A(a), 3A).

Page 8 1253881 V. Description of invention (5) = diagram / kg); Secondly, on the ceramic substrate 3. . On the other side, the first end is made of J-guided a, 3 02b (such as Chuan Caution) Erguang; 乍" 3 ceramic substrate 3 °. The central design position is formed with micro-gap 1 time and K buffer layer 3〇3 (as in 3cu), %(8) as shown in the figure or turning over (3; ί ^ the arc withstand capability to contain the conductor material of the (Pd) pole conductor 304, and the second of your two 'mountain 以上Make the main discharge electric μ, 3⁄4 . ^ , " make the electrode connection with the conductors 301a, 301b connected == two =:),))); at the same time, in order to avoid the 1 gap 3 0 6 in the main release Lei ^ qn L J J and the burr, first on the electric body to produce 1 unnecessary layer second buffer layer 305 Γ Γ 冉 冉 冉 以 以 以 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石 钻石Then, the cut is made to traverse the second slow; the layer 30 cuts the mountain process to the central crevice of the structure 3. 6 and its depth is equal to the second: the width is 〜3. The inter-electrode conductor 304 is cut into the left, ', ί layer 30 3, at which time the main discharge of the inner layer 3 〇 4b (such as 3F (a), 3F (, b) one or two main discharge, the electrode 3 〇 4a , tt^304a ^ 3 0 4b ^ ^ , Fa1 0 6 hair material 307 (such as 3G (a), 3Gi ^ / underheating into the gas domain i made between the coating 1 electrode 3 0 4a, 304b It is formed: outside the main enemy „3. 8... over the other; as in the 31st 2 9 2 3〇9 no, the bottom end of the Tao competition plate is made, the end electrode is connected (:)

1253881 V. Description of invention (6)

3 〇 1 a, 3 0 2 a — terminal electrode 3 1 0 a, and terminal electrode 310b connecting the bottom end, the other end of the terminal electrode connecting conductor 301b, 032b; finally, as in 3J (a), 3J ( b) As shown in the figure, the solder interface layer 3 1 1 a, 3 11 b ' is formed on the terminal electrodes 31A, 310b by an electroplating process to complete the entire wafer type micro air gap discharge protection element. [Example 2]

Please refer to the 4A(a) to 41(b) diagram. First, the first terminal electrode connection conductors 4〇ia, 4〇lb (for example, 4A(a), 4A (b) Fig.); secondly, a second end > electrode connection conductors 40 2a, 422b are formed on the other side of the ceramic substrate 4, and one of the terminal electrode connection conductors 402a extends slightly toward the center (e.g. 4B(a) and 4B(b) are not included; and are made of a conductor material containing at least 丨〇% or more of palladium (Pd) or platinum (pt) at a design position in the center of the ceramic substrate 4〇〇. The main discharge electrode (for example, 1# = +4(::(1))) is connected to the conductor 4102a for the solid-state electrode connection, and the main discharge electrode 4 is provided at the center with the pressure-resistant insulating material 403. Part of the 〇4a is exposed to the remaining area of the main discharge electrode 4 04a. The insulating material 403 is made thicker. A spleen $翩+ ^ The same pressure resistance size is 5~? The gap weight T of the V discharge electrode is controlled between 5 and 25 (for example, the 4D(a), 4 is filled in the reserved hole 4 05, and it is easy to be replaced by a thin (such as 4EU). Fig.======================================================================================================== And the electrode is connected to the sintering process, and the small hole 4 () 5 is reserved for use, and the flat material r raw material 枓 4〇7 is burned out to form.

1253881 V. INSTRUCTIONS (7) "一^- Middle air chamber 40 9 (as shown in Figures 4F(a) and 4F(b)); at this time, the air chamber is replaced by main discharge electrodes 40 4a, 4 04b The high-voltage insulation material 4〇3 is completely covered; the coated protective layer 4〇8 is formed on the entire main structural area (as shown in Figures 4G(a) and 4G(b)); and the 4H (a) ), 4H (b), square; Tao Jing board to create a connection bottom, terminal electrode connection conductors 4 〇 1 & 402a - terminal electrode conductor 4 10a, and connection bottom, terminal electrode connection The end electrode conductor 41〇b at the other end of the conductors 401b, 40 2b is finally formed on the terminal electrode connecting conductors 41〇a, 4 1 0 b by electroplating as shown in the figure "(a), 4 1(b)". The solder interface layer 4 11 a, 4 1 1 b is formed, thus completing the entire wafer type 10 micro air gap discharge protection element. As described above, the wafer type micro air gap discharge protection element of the present invention is configured. The utility model is characterized in that: it has a ceramic substrate 3〇〇, • a pair of first end electrode connecting conductors 3 0 1 a, 3 0 1 b at the ends of one side of the substrate, a pair is located a second end electrode connecting conductors 302a and 302b at both end portions of the other surface of the substrate, and a first buffer layer 3 〇3 disposed between the second vertical electrode connecting conductors on the surface of the substrate, a pair a main discharge electrode 3〇4a, 304b separated from the second terminal electrode by a left gap in the air chamber 309, and a second overlying main discharge electrode conductor 404 The buffer layer 3〇5 is coated on the main protective electrode 3〇, the second protective layer 308 of the second end electrode connecting conductors 3〇2a and 302b of the 304b portion, and the pair is disposed on both end faces of the substrate 3 and connected The terminal electrodes 31A and 31B of the first and second terminal electrode connecting conductors 301a and 302a, and a pair of soldering interface layers 3i and 311b provided on the terminal electrodes 310a and 310b. The above wafer type micro air gap discharge protection component, wherein the second end is electrically

1253881 V. INSTRUCTION DESCRIPTION (8) One of the pole connecting conductors may extend over the center of the substrate to the pole connecting conductors, respectively forming a base portion connected by conductors, and the end portions are oppositely placed to discharge the two main discharging electrodes 404a Between 4 04b, the 4 0 3 'high-voltage insulation material is above 4 〇3, and there are _ again. According to the above two examples, 4 points are known: 1 · Bidirectional alignment electrode structure, which can be used by diamond The cutting method is very easy to discharge the gap discharge electrode 1 〇 ~ 3 0 # m. 2. ff laminated electrode structure, the size of the electrode electrode between the gap discharge electrodes can be extremely small by layer printing f: The purpose of low-voltage protection design needs to be early, the structure needs to be clear, the above In the two cases, if the invention is based on the invention, the invention has not gone beyond the specification and the drawings; In the spirit of the cymbal, the second terminal electrode is connected to the second terminal electrode & electrode 404a, t a high withstand voltage insulating material discharge aperture 40 5 . ♦ ♦ Having the following excellent cuts or the size control between the lasers to the thickness control mode, it is up to 5~2 5 # m. The breakdown voltage device can be provided to function in accordance with the preferred implementation of the ESD, and should be in the 1253881 of the present invention. FIG. 1A is a structural diagram of a conventional gap discharge technique. Figure 1B is a graphical representation of the voltage suppression of the conventional gap discharge technique. Fig. 2A to Fig. 2C are explanatory diagrams of the premature patent of the gap discharge. 3A(a) to 3(b) are diagrams showing the manufacturing process and apparatus of the first embodiment of the present invention. 4A(a) to 4(b) are diagrams showing the construction process and apparatus of the second embodiment of the present invention. [Comparison of component names and symbols in the drawing] > 1 0 : Printed circuit board 1 1 · Lines 12a, 12b: Tip discharge electrode 13 : Gap 15 : Electric shock 2 0, 21 : Curve 2 : Cylindrical ceramic element 3 : Conductive film 5, 6: electrode 7: recess ί 8 : glass tube 11 surge absorbing element 12 conductive film 13 cylindrical insulating material 15 cylindrical ceramic insulating tube

Page 13 1253881 Brief description of the diagram 16: Terminal electrode 1 7 : Conductive buffer material Μ : Discharge gap 21 0 : Conductive film 2 1 1 : Surge absorbing element 2 1 2 : Terminal electrode 21 3 : Glass tube G: Inert Gas 300, 400: ceramic substrate p 301a, 301b: first terminal electrode connecting conductors 302a, 302b: second terminal electrode connecting conductor 3 0 3 : first buffer layer 304 · main discharge electrode conductors 304a, 304b, 404a 404b: main discharge electrode • 3 0 5 : second buffer layer 3 0 6 , 4 0 6 : gap 3 0 7 , 4 0 7 : volatile material 3 0 8 , 4 0 8 : protective layer 309 , 409 ·• Middle air chamber • 3 1 0 a, 3 1 0 b : terminal electrodes 311a, 311b, 411a, 411b: solder interface layers 401a, 401b, 402a, 40 2b: terminal electrode connection conductor 4 0 3 : high withstand voltage insulating material 4 0 5 : discharge porosity

Page 14 1253881 Schematic description 41 Oa, 410b: terminal electrode conductor liiii Page 15

Claims (1)

1253881 Case No. 94109428 曰Revised VI. Patent Application Range - 1. A wafer type micro air gap discharge protection element comprising: a ceramic substrate; a pair of first end electrode connecting conductors at one end of one side of the substrate; a second end electrode connecting conductor located at an end of the other side of the substrate; a first buffer layer disposed between the second end electrode connecting conductors on the surface of the substrate; a pair of main discharge electrodes separated by an air chamber in a micro gap and connected at both ends to the second end electrode; a second buffer layer overlying the main discharge electrode conductor; and a main discharge a second protective layer of the second terminal electrode connecting conductor of the electrode portion; and a pair of conductors for connecting the first and second terminal electrodes to the both end faces of the substrate. 2. The component of claim 1, wherein the intermediate air chamber is between the two main discharge electrodes, and the gap has a size ranging from 5 to 3 0 // m. 3. The component of claim 1, wherein one of the second end electrode connecting conductors extends toward the center of the substrate, and the two second end electrodes 4 are connected to the conductors to form a base portion and the The second end electrode connection is connected by a conductor, and the main discharge electrode of the end phase is heavy. The two main discharge electrodes are between the two main discharge electrodes, and there is a *^ Nancaobao insulation material, and the Nanbeibao insulation material is ^^ and has Discharge pores. 4. If the components mentioned in item 1 or 3 of the patent application are applied, Page 16 1253881 Case No. 94109428 曰 Fixes included Sixth, the scope of application for patents - the outer side of the electrode is covered and covered by the solder interface layer. The method for manufacturing a wafer type micro air gap discharge protection element comprises the steps of: fabricating a first end electrode connecting conductor on one side of a ceramic substrate; forming a second end electrode connecting conductor on the other side of the ceramic substrate; on the ceramic substrate Forming a first buffer layer required for micro-gap fabrication at a central design position; making a main discharge electrode with a conductor material containing at least 10% or more of palladium (Pd) or platinum (Pt), and making it and the terminal electrode The connecting conductors are connected to be short-circuited; firstly, the main discharge electrode conductor is coated with a second buffer layer; then, a gap spanning the two ends of the second buffer layer is cut in the central portion of the structure. The main discharge electrode conductor is cut into two main discharge electrodes, left and right. In the main discharge electrode region of the micro-gap, a volatile material which is easily become a gas due to heat is filled; a protective layer is formed on the entire main structure region. Before the completion of the protective layer, the heating process is used to heat the obtained substrate structure to completely volatilize the material, and at this time between the main discharge electrodes Forming a middle air chamber, and the outer portion of the gas chamber is completely covered by the protective layer; forming a connecting bottom portion on the end surface of the ceramic plate, a terminal electrode at one end of the end electrode connecting conductor, and a terminal electrode connecting the bottom end and the other end of the end electrode connecting conductor; And, in the electroplating process, the solder interface layer is formed on the terminal electrode. Page 17 1253881 _ Case No. 941Q9428 VI. Scope of Application 曰 Amendment Included 6. Method for manufacturing wafer type micro air gap discharge protection element The following steps: Making a first end electrode connection conductor on one side of a ceramic substrate; A second end electrode connecting conductor is formed on the other side of the substrate, wherein one of the second end electrode connecting conductors extends slightly toward the center; and the center of the ceramic substrate is designed to contain palladium (P d ) or platinum (P t a conductive material having an amount of at least 10% or more to form a main discharge electrode connected to a conductor for connecting the second terminal electrode; A small hole is left in the central portion of the high-voltage insulating material to expose a portion of the main discharge electrode, and the remaining area of the main discharge electrode is completely covered; the hole is filled in the reserved hole and is easily heated by the heat. And become a volatile material of gas; making another main discharge electrode with a conductor material containing at least 10% or more of palladium (Pd) or platinum (Pt), in addition to connecting the conductor for connecting the front end electrode, and sintering at the same time The process will reserve the volatile material in the small hole to form a middle air chamber; make a protective layer on the entire main structure area; make a connection bottom on the end surface of the ceramic plate, and use the first and second end electrode connection 4 conductor a terminal electrode of one end, and a terminal electrode conductor connecting the bottom, the first and second ends, the other end of the electrode connecting conductor, and the solder interface layer formed on the terminal electrode connecting conductor. Page 18