1231637^ 玖、發明說明： 【發明所屬之技術領域】 本發明係有關於一種過電壓保護裝置，其尤指一種 扁平式過電壓保護裝置，係揭露一運用氣體放電原理， 透過同一平面之放電電極及一放電空間，且其為一種表 面黏著型態的過電壓保護元件，並進一步將氣體放電技 術與金屬乳化物變阻益（Metal-Oxide Varistor, MOV)整 合在一起，形成一顆兼具兩種技術優點的微型過電壓保 護元件。 【先前技術】 按電子及電機成品遭遇的暫態型過電壓型態，基本 上可分為三大類：靜電、雷擊及交流電源的突波。靜電 是一種瞬間高電壓，停留時間為奈秒（ns)級；雷擊的特 色是高電流，停留時間是微秒（AS)級；交流電源的突波 停留時間最長，為毫秒(ms)級，也是這三種過電壓型態 中破壞能量最大的。 針對以上過電壓型態，現今工業上已有多種不同技 術方式的保護元件，多層次保護電子電機產品及使用者 的安全。以半導體製作的雪崩二極體，常使用在低電壓 的電子產品上防護靜電，其優點是反應速度快，缺點是 無法承受大電流，且漏電流及電容值偏大。閘流體 (Thyristor)是另一種以半導體技術製作的過電壓保護 兀件’可以承受一百安培以上的大電流，反應速度快， 但漏電流及電容值較大，通常使用於通信產品的雷擊保 護。金屬氧化物變阻器（MOV)是一種廣泛使用的突波吸收 1231637 器’通常是以氧化鋅為主體，摻雜氧化纽等其他氧化物 經南溫燒結而成，反應速度快及财rij電流，但漏電流及 電容值較大，而且經大電流多次衝擊後，其特性會衰變。 氣體放電管是密封的中空圓柱體結構，利用氣體分子在 高電壓下解離及撞擊其他氣體分子以傳遞電流的原理， 吸收突波。和其他保護元件比較，氣體放電管的财電流 能力最大，漏電流及電容值最低，但缺點是反應速度慢 而且啟動電壓較高，目前主要應用於雷擊及交流電源的 突波吸收。 以上依據不同技術的過電壓保護元件各有其優缺 點’沒有一種是完美理想的。工業上應用有時將兩種不 同技術的元件一起搭配使用，使其優缺點互補。外型上， 二極體、閘流體（Thyristor)及金屬氧化物變阻器（MOV) 皆能提供扁平式產品，可以表面黏著型態固定在電路板 上’但反觀氣體放電管的圓柱體結構，卻不方便以表面 黏著方式固定在電路板上，而且高度太高，更不適合電 子產品輕薄短小的應用要求。 第一圖是習知技術的氣體放電管，包含兩個圓柱形的 主要電極第一放電電極1〇2，及第二放電電極1〇4，，有 時會增加第三放電電極1〇6，，電極材料通常是由銅構成 的’電極表面有時會塗佈一層特殊材料100，以增加放電 效能°放電空間是由中空的絕緣圓柱體200，和300，所 構成’其材質通常是90%以上純度的氧化鋁陶瓷。絕緣圓 柱體200’和3〇〇，的兩端，一般是以鎢或其金屬燒結一 I薄膜210’ ’作為絕緣體和電極結合的底材。絕緣體和 電極的結合，通常是使用銅-銀合金的薄片310，，在真 Ϊ231637 空爐中通入惰性氣體，升高溫度使銅一銀合金薄片熔化， 冷卻彳惰性氣體密封在腔體410，内。使用的惰性氣 體-般是氬氣和氖氣，有時會添純減其他氣體以= 放電特性。 有些氣體放電管會在絕緣體的内壁以半導體材料涂 佈一些線條109’來改進放電的反應速度。放電電極的^ 距、電極的表面材質型態，以及氣體的種類和壓力是^ 定氣，放電的重要因素。氣體放電管的電極間距 二般疋，制在〇· 5-ΐ· 〇毫米（隨）。當兩個電極間的電壓 咼過額定值時，過電壓經由兩電極之間的氣體放 導，電極1〇2’和1〇4，經由間距Α，電極1〇2，和 經由間距Β，電極104，和106，也經由間距β。 現今工業上使用之氣體放電管的外形尺寸，兩個雷 極的產品最小外形是5*5毫米（ram，直徑*長度），三個雷 極的產品最小外形約為6*8毫米（mm，直徑*長度 a =??:120:與i3。’，以插件方式固;i 但疋间度太咼，整體尺寸太大，不適於 產品輕薄短小的應用要求。 、 因此，如何針對上述問題而提出一種新穎扁 夕 二=倾裴置，不僅可改善習知之氣體放電管的：柱 體二構，卻不方便以表面黏著方式固定在電路板上，而 且鬲度太高之缺點，長久以來一直是使用者殷切盼望的。 【發明内容】 本發明之主要目的，在於提供一種扁平式過電壓僻 «置’卩平面型基板為載具，將至少兩個放電電極潔 7 1231637 ，結於基板上，且在放電電_前端及其附近 作-個中空的放電㈣’以氣體放電方式吸收突波1 具備耐電流、低電容值及低漏電流等特性。因其為一 平式產品’可以使用表面黏著方式固定在電路^上，以 符合電子產品輕薄短小之要求。 、本發明之另一目的，在於提供一種反應速度快的扁 平式過電壓保護裝置，其係以金屬氧化物變阻器（M〇v)的 材料製作基板，在基板的上下兩面製作電極，上方電極 與下方電極部分4疊，形成至少—個以基板厚度為導通 路徑的變阻器。然後在變阻器上方電極之上面製作一絕 緣層與氣體放電裝置，將氣體放電與金屬氧化物變阻器 (MOV)兩種過電壓保護技術，並聯整合成單顆微形元件， 使其遇到高速度的過電壓脈衝時，反應快的變阻器先啟 動以壓制過電壓，讓反應速度慢的氣體放電裝置有足夠 時間反應，以疏導後續的大電流。 ^ 本發明之再一目的，在於提供一種扁平式過電壓保 護裝置，其放電電極以薄膜方式製作在同一個平面上， 電極的間距儘可能縮小，以降低啟動電壓及提升反應速 度，以期將氣體放電的技術，運用到高速度的靜電保護。 【實施方式】 本發明係為一種扁平式過電壓保護的裝置，基本上 以氣體放電方式，保護電子及電機成品，使其免於受到 靜電'雷擊以及交流電源突波等暫態型過電壓的侵害。 其作法是將放電電極製作在一個平面型絕緣基板上，結 1231637 構中空的放電空間，並以玻璃將惰性氣體密封。由於本 發明的創新，更可以金屬氧化物變阻器的材料為基板， 整合氣體放電技術與金屬氧化物變阻器成為並聯結構的 單一顆微型元件，以金屬氧化物變阻器改進氣體放電反 應速度慢的缺失，以及習知技術氣體放電管的圓柱體結 構，卻不方便以表面黏著方式固定在電路板上，而且高 度太高之缺點。 首先，請參閱第二A圖及第二B圖，其係為本發明 之放電電極配置及製作之示意圖；如圖所示，本發明至 少兩個放電電極之第一電極1〇2、第二電極1〇4和第三電 極106，置放於同一平面，可以直接製作在基板2〇〇上； 該基板200係平面型態，可使用純度9〇%以上之氧化鋁陶 瓷基板或平板玻璃。放電電極可以薄膜方法製造，在整 片基板200上先製作一層很薄的鉻或鈦當作黏結層，再 製作主要的電極材料銅、鎳或其他金屬；也可以在電極 材料上再製作一層抗氧化金屬，例如白金。金屬層製作 完成後，再塗佈光阻和曝光顯影，並蝕刻金屬膜製作出 預設的電極形狀及間距。 放電電極必須具備一定的厚度，至少要1微米（//m) 以上，才能夠承受過電壓的高電流及多次使用後的電極 才貝耗。增加電極厚度比較經濟的方法是先以薄膜製程製 作出一層很溥的電極後，再以化學電鍍方法加厚。以薄 臈製程製作，電極的間距可以作得非常小，1Q微米（扉) 或更小，最適用於高速度高電壓但能量較低的靜電保護。 1231637 本發明至少兩個放電電極之第一電極1〇2、第二電極 104和第三電極106，也可以使用厚膜印刷方式製作。以 網版或鋼版印刷方法將銀-鈀導電膠直接印製到基板2〇〇 上，經過高溫去除其中的溶劑和黏結劑並燒結銀〜鈀合金 即成為電極。故電極係直接黏結在基板上，其間距可以 做到250微米（#m)，電極的厚度約為1〇—3〇微米（#m)。 ‘ 該至少兩個放電電極之第一電極102、第二電極ι〇4 ' 和第三電極106配置在同一個平面上，因此當電極放電 、 時，電漿有可能沉積在電極之間，造成漏電流或短路現 象。通常放電電極間距愈小，疏導的能量愈大，重複工 _ 作次數愈多，則電極之間漏電流或短路現象愈明顯。為 解決此一顧慮’得在兩電極之間製作一層财溫的絕緣^ 108，隔離相鄰的兩個電極，避免沉積下來的電漿直接連 接到電極。耐溫絕緣層108可以是聚亞醯胺 (Polyimide)、玻璃或其他氧化物，例如氧化鋁、氧化石夕 等，以網版、鋼版印刷或曝光顯影及姓刻方法製作，電 極放電的間距A和B則由絕緣層108的寬度決定。 放電電極經過多次使用後會產生損耗，尤其是在陰 極端，因此電極必須具備一定的厚度。過電壓的能量命 _ 大，保護裝置重複工作的次數愈多，則電極厚度必須愈 · 厚。第三A圖及第二B圖係本發明另一製作電極之方、去， 至少兩個放電電極之第一電極102、第二電極和第r · 電極106，可以使用薄銅片，厚度約50-500微米（以心， 再加以電鍍耐氧化金屬，例如鍍鎳再鍍金。電極的形狀 和間距A和B的形成’可以兩種方式製作；其一是將整 10 Ϊ231637 _黏結層_和基板2GG結合，再以化學 田1 =式襄作出預設的電極形狀與間距A和B。其二是估 先成型的金屬薄片以黏結層600和基板200結合； 600的材料可為玻璃。該第一電極102、第二電極 ϋ第二電極1〇6的前端得懸浮在基板2〇〇之上，其 士 =等於黏結層_的高度，其目的在於避免電極放 :產生的電漿沉積在電極之間，而造成相鄰兩電極 間漏電流或短路。 以上有關於本發明放電電極配置及製作方法之實施 J所有的放電電極，直接製作在基板上，或是以黏結 層和基板結合。在相同製程下完成製作，尺寸可以精密 才工制，電極間之間距Α和β也可以製作的比習知技術的 氣體放電管小。 再者’喷參閱第四圖’其係為本發明之中空放電空間 、、、°構和放電装置之示意圖；如圖所示，該放電電極製作完 成後’接著分別在基板200與絕緣板700的四周製作封口 玻璃500，再將基板2〇〇與絕緣板7〇〇對位疊合並熔化玻 璃’使得絕緣板700在電極的上方形成一個中空結構，並 以封口玻璃500在四周密封，形成中空的放電空間。最後 印製端電極110、120和130，即成為一個完整的放電裝 置。 絕緣板700是耐溫的絕緣板，可使用純度90%以上的 氧化铭陶瓷基板或平板玻璃，厚度約〇· 5毫米（mm)。絕緣 板700上得製作一個凹陷的區域71〇，包含所有放電電極 的前端，以增大放電空間的高度。封口玻璃500的主要成 11 1231637 份是氧化鉛和氧化硼，是破璃粉末和溶劍及黏結劑均 拌而成的玻璃膏，先以網版或鋼版印刷的方式 2〇〇與絕緣板7G0的四周。再移人烤箱中，在攝氏⑽〜土細 ，溫度下揮發溶劑；再以攝氏獅〜權度在含有氧氣的氣 氛下’將#纟!續氧化成二氧化碳和水蒸氣去除；最後再升 溫至玻璃的熔化點，將玻璃顆粒熔化連結，熔化點通常^ 攝氏400〜600度，依玻璃的種類而異。 疋1231637 ^ 发明, Description of the invention: [Technical field to which the invention belongs] The present invention relates to an overvoltage protection device, particularly a flat overvoltage protection device, which discloses a discharge electrode that uses the principle of gas discharge and passes through the same plane. And a discharge space, which is a surface-adhesive overvoltage protection element, and further integrates gas discharge technology with Metal-Oxide Varistor (MOV) to form a combination of two This kind of technology has the advantages of miniature overvoltage protection element. [Previous technology] According to the transient overvoltage types encountered by electronic and motor finished products, they can basically be divided into three categories: static electricity, lightning strikes, and surges from AC power supplies. Static electricity is an instantaneous high voltage with a residence time of the nanosecond (ns) level. Lightning strikes are characterized by high currents and a residence time of the microsecond (AS) level. The surge stay time of AC power sources is the longest, which is in the millisecond (ms) level. It is also the largest destruction energy of these three types of overvoltage. In response to the above over-voltage types, there are many different protection methods in the industry today to protect the safety of electronic motor products and users at multiple levels. Avalanche diodes made of semiconductors are often used to protect static electricity on low-voltage electronic products. The advantages are fast response times, the disadvantage is that they cannot withstand large currents, and the leakage current and capacitance values are large. Thyristor is another kind of overvoltage protection element made by semiconductor technology. It can withstand a large current of more than 100 amps and has a fast response speed, but the leakage current and capacitance are large. It is usually used for lightning protection of communication products. . Metal oxide varistor (MOV) is a widely used surge absorber 1231637. It is usually made of zinc oxide and doped with other oxides such as doped oxide and sintered at South temperature. The reaction speed is fast and the current is high. Leakage current and capacitance value are large, and its characteristics will decay after repeated impact of large current. The gas discharge tube is a sealed hollow cylinder structure. It uses the principle that gas molecules dissociate under high voltage and impinge on other gas molecules to transmit current, and absorb surges. Compared with other protection components, the gas discharge tube has the largest current capacity, the lowest leakage current and the lowest capacitance value. However, its shortcomings are its slow response speed and high startup voltage. At present, it is mainly used for surge absorption of surges and AC power supplies. Each of the above-mentioned overvoltage protection elements based on different technologies has its advantages and disadvantages, and none of them is perfect. Industrial applications sometimes use two different technology components together to complement their advantages and disadvantages. In appearance, diodes, thyristors and metal oxide varistors (MOVs) can all provide flat products, which can be fixed on the circuit board by surface adhesion. But in contrast to the cylindrical structure of gas discharge tubes, It is inconvenient to be fixed on the circuit board by surface adhesion, and the height is too high, which is not suitable for the requirements of light, thin and short electronic products. The first figure is a conventional gas discharge tube, which includes two cylindrical main electrodes, a first discharge electrode 102 and a second discharge electrode 104, and sometimes a third discharge electrode 106 is added. The electrode material is usually made of copper. The electrode surface is sometimes coated with a special material 100 to increase the discharge efficiency. The discharge space is made of hollow insulating cylinders 200 and 300. The material is usually 90%. Alumina ceramics of above purity. The ends of the insulating cylinders 200 'and 300' are generally made of tungsten or a metal sintered I film 210 '' as a substrate for bonding the insulator and the electrode. The combination of the insulator and the electrode is usually a copper-silver alloy sheet 310. An inert gas is passed into the true furnace 231637 empty furnace, the temperature is increased to melt the copper-silver alloy sheet, and the cooling / inert gas is sealed in the cavity 410. Inside. The inert gases used are generally argon and neon, and sometimes other gases are added to reduce the discharge characteristics. Some gas discharge tubes will have lines 109 'coated with semiconductor material on the inner wall of the insulator to improve the reaction speed of the discharge. The distance between the discharge electrodes, the surface material type of the electrode, and the type and pressure of the gas are important factors in determining the gas and discharge. The electrode spacing of the gas discharge tube is generally 疋, made at 0.5-0.5mm (with). When the voltage between the two electrodes exceeds the rated value, the overvoltage is conducted through the gas discharge between the two electrodes, electrodes 102 ′ and 104, via the distance A, the electrode 102, and via the distance B, The electrodes 104, and 106 are also via a pitch β. The outer dimensions of the gas discharge tubes used in industry today. The minimum outer shape of two Thunderbolt products is 5 * 5 mm (ram, diameter * length), and the minimum outer shape of three Thunderbolt products is approximately 6 * 8 mm (mm, Diameter * length a = ??: 120: and i3. ', Fixed by plug-in method; i but the interval is too large, the overall size is too large, and it is not suitable for light and short applications of the product. Therefore, how to address the above problems This paper proposes a new type of flat-bodied structure, which can not only improve the conventional gas discharge tube: the cylindrical structure of the cylinder, but it is not convenient to be fixed on the circuit board by surface adhesion, and the shortcomings are too high. [Explanation] The main object of the present invention is to provide a flat over-voltage remote-controlled flat substrate as a carrier, and at least two discharge electrodes should be cleaned on the substrate. And, a hollow discharge is made at the front end of the discharge power and near it. 'The surge is absorbed by the gas discharge method. 1 It has the characteristics of current resistance, low capacitance and low leakage current. Because it is a flat product, you can use the table. The surface adhesive method is fixed on the circuit ^ to meet the requirements of lightness, thinness and shortness of electronic products. Another object of the present invention is to provide a flat overvoltage protection device with fast response speed, which is a metal oxide varistor (M〇 v) The substrate is made of materials. The electrodes are made on the upper and lower sides of the substrate. The upper electrode and the lower electrode part 4 are stacked to form at least one varistor with the substrate thickness as the conduction path. Then an insulating layer and a gas are made on the upper electrode of the varistor. Discharge device, which integrates gas discharge and metal oxide varistor (MOV) overvoltage protection technology in parallel to integrate into a single micro-shaped element. When it encounters a high-speed overvoltage pulse, the fast-response varistor starts first to suppress The over-voltage allows the gas discharge device with a slow response time to react enough to divert the subsequent large current. ^ Another object of the present invention is to provide a flat over-voltage protection device, the discharge electrodes of which are made in a thin film. On a plane, the distance between the electrodes should be as small as possible to reduce the starting voltage and increase the response speed. In order to apply the technology of gas discharge to high-speed electrostatic protection. [Embodiment] The present invention is a flat overvoltage protection device, which basically protects the finished products of electronics and motor from gas discharge by means of gas discharge. Affected by transient overvoltages such as static lightning and AC power surges. The method is to make the discharge electrode on a flat insulating substrate, construct a hollow discharge space with 1231637, and seal the inert gas with glass. Because The innovation of the invention can further use the material of the metal oxide varistor as the substrate, integrate the gas discharge technology and the metal oxide varistor into a single micro-element in a parallel structure, use the metal oxide varistor to improve the lack of slow gas discharge reaction speed, and The cylinder structure of the prior art gas discharge tube is disadvantageous in that it is inconvenient to be fixed on the circuit board by surface adhesion, and the height is too high. First, please refer to the second diagram A and the second diagram B, which are schematic diagrams of the arrangement and fabrication of the discharge electrode of the present invention; as shown, the first electrode 102 and the second electrode of the at least two discharge electrodes of the present invention The electrode 104 and the third electrode 106 are placed on the same plane, and can be directly fabricated on the substrate 2000. The substrate 200 is a planar type, and an alumina ceramic substrate or flat glass with a purity of 90% or more can be used. The discharge electrode can be manufactured by a thin film method. On the entire substrate 200, a thin layer of chromium or titanium is firstly used as a bonding layer, and then the main electrode material is copper, nickel, or other metals. Alternatively, a layer of resistive material can be made on the electrode material. Oxidized metals, such as platinum. After the fabrication of the metal layer is completed, photoresist and exposure are developed, and the metal film is etched to produce a preset electrode shape and pitch. The discharge electrode must have a certain thickness, at least 1 micron (// m) or more, to be able to withstand the high current of overvoltage and the electrode is consumed after repeated use. It is more economical to increase the thickness of the electrode by first making a very thin layer of electrode through a thin film process, and then thickening it by chemical plating. It is made by thin 臈 process, and the electrode pitch can be made very small, 1Q micron (扉) or less, which is most suitable for high-speed, high-voltage but low-energy electrostatic protection. 1231637 The first electrode 102, the second electrode 104, and the third electrode 106 of the at least two discharge electrodes of the present invention can also be produced by a thick film printing method. The silver-palladium conductive adhesive is directly printed on the substrate 2000 by a screen printing method or a stencil printing method. After high temperature, the solvent and the binder are removed and the silver-palladium alloy is sintered to become an electrode. Therefore, the electrodes are directly bonded to the substrate, and the distance between them can be 250 micrometers (#m), and the thickness of the electrodes is about 10-30 micrometers (#m). 'The first electrode 102, the second electrode ι04 and the third electrode 106 of the at least two discharge electrodes are arranged on the same plane, so when the electrodes are discharged, the plasma may be deposited between the electrodes, causing Leakage current or short circuit. Generally, the smaller the distance between the discharge electrodes, the greater the energy for grooming and the greater the number of repeated operations, the more obvious the leakage current or short circuit between the electrodes. To address this concern, a layer of financial insulation must be made between the two electrodes to isolate the two adjacent electrodes and prevent the deposited plasma from directly connecting to the electrodes. The temperature-resistant insulating layer 108 may be polyimide, glass, or other oxides, such as alumina, stone oxide, etc., and is produced by screen printing, stencil printing or exposure development and engraving methods, and the distance between electrode discharges. A and B are determined by the width of the insulating layer 108. Discharge electrodes are subject to loss after repeated use, especially at the cathode, so the electrodes must have a certain thickness. The energy of the overvoltage is large. The more times the protective device is repeatedly operated, the thicker the electrode must be. The third diagram A and the second diagram B are another method of making electrodes according to the present invention. The first electrode 102, the second electrode, and the r-th electrode 106 of at least two discharge electrodes can use thin copper sheets with a thickness of about 50-500 microns (with the heart, and then plated with an oxidation-resistant metal, such as nickel and then gold. The shape and spacing of the electrodes A and B can be formed in two ways; one is to make a whole 10 Ϊ231637 _bonding layer_ and The substrate 2GG is combined, and then the chemical electrode 1 = formula is used to make a preset electrode shape and spacing A and B. The second is to estimate the first formed metal sheet to be bonded with the adhesive layer 600 and the substrate 200; the material of 600 can be glass. The The front ends of the first electrode 102 and the second electrode 206 must be suspended above the substrate 2000, and its height is equal to the height of the adhesive layer _. The purpose is to prevent the electrode from being deposited: Between the electrodes, causing leakage current or short circuit between two adjacent electrodes. The above is the implementation of the discharge electrode configuration and manufacturing method of the present invention. All the discharge electrodes are directly fabricated on the substrate, or they are bonded to the substrate with an adhesive layer. Finished in the same process The size can be precisely manufactured, and the distance between the electrodes A and β can also be made smaller than that of the conventional gas discharge tube. Furthermore, 'see the fourth figure for spraying', which is the hollow discharge space of the present invention, Schematic diagram of the structure and discharge device; as shown in the figure, after the completion of the production of the discharge electrode, 'the sealing glass 500 is then made around the substrate 200 and the insulating plate 700, and the substrate 200 and the insulating plate 700 are Bit stacking and melting glass' makes the insulating plate 700 form a hollow structure above the electrode, and is sealed around with sealing glass 500 to form a hollow discharge space. Finally, the terminal electrodes 110, 120 and 130 are printed to become a complete Discharge device. Insulating plate 700 is a temperature-resistant insulating plate. An oxide ceramic substrate or flat glass with a purity of 90% or more can be used. The thickness is about 0.5 millimeters (mm). A recessed area 71 can be made on the insulating plate 700. Including the front ends of all discharge electrodes to increase the height of the discharge space. The main components of the sealing glass 500 are 1212637 parts, which are lead oxide and boron oxide, glass breaking powder, melting sword, and bonding. The glass paste mixed with the agent is first printed on the screen or steel plate in the form of 2000 and around the insulating plate 7G0. Then it is moved into the oven, and the solvent is evaporated at a temperature of ⑽ Celsius to a fine soil, and the temperature is then Celsius Under the atmosphere containing oxygen, it will continue to oxidize # 纟! To remove carbon dioxide and water vapor; finally, it will heat up to the melting point of the glass and fuse the glass particles, the melting point is usually 400 ~ 600 degrees Celsius, according to The type of glass varies.
冷卻後的基板200與絕緣板700分別有一層封口破 璃500覆蓋在其四周，·再將基板2〇〇與絕緣板7卯對位 疊合，置入真空爐中，通入惰性氣體，控制適當的氣壓 值，並加溫至玻璃的熔化點，讓封口玻璃5〇〇熔化連結， 冷卻後即將惰性氣體密封在内。封口玻璃刚在真空爐 加溫熔化的過程中，若不通入任何氣體，冷卻後的密封 放電空間則成為真空狀態。After cooling, the substrate 200 and the insulating plate 700 are respectively covered with a layer of sealing and breaking glass 500, and then the substrate 200 and the insulating plate 7 卯 are superimposed and placed in a vacuum furnace, and an inert gas is passed in to control Appropriate air pressure value, and warm to the melting point of the glass, let the sealing glass 500 melt and join, after cooling, the inert gas is sealed inside. The sealing glass has just been cooled and melted in the vacuum furnace. If no gas is passed in, the sealed discharge space after cooling will be in a vacuum state.
本發明至少兩個放電電極之第一電極1〇2、第二電極 104和第二電極1〇6的後端延伸至基板2〇〇的邊緣，藉由 相對應之第一端電極110、第二端電極12〇和第三端電極 130對外連接。端電極的材料常用的是含銀導電膠，塗佈 在基板上預設的位置，經過加溫去除其中的溶劑和黏結 劑後即成一固態的導電膜，有時另外以電鍍方式鍍上鎳 及焊錫，以增加元件對電路板的黏結強度。 故本發明放電裝置之主要構造包括：一平面型基板 200 ;至少兩個放電電極之第一電極1〇2、第二電極1〇4 和第，電極106，其係黏結於該基板上，且彼此之間相距 一適當距離；一中空的放電空間41〇，包含所有放電電極 12 1231637 的前端，係以絕緣板700在電極的上方形成中空結構， 並以封口玻璃5GG在其©周密封；以及至少兩個端電極 之第一端電極110、第二端電極12〇和第三端電極13〇， 係黏結於該基板上，且個別與放電電極之第一電極1〇2、 第二電極104和第三電極106的後端一對一連接。 再者，反應速度較慢是氣體放電的一項缺點，以一 個250伏特（V)的氣體放電管為例，在直流電時的啟動電 壓（DC Sparkover)為250伏特；但是在每微秒1〇〇伏特 (100V///S)電壓脈衝時，啟動電壓為475伏特；在每微 秒1000伏特（1000V///S)電壓脈衝時必須7〇〇伏特才能 啟動。工業上應用的氣體放電管的直流電啟動電壓，大 部份是介於75伏特至600伏特之間，少部份是1〇〇〇伏 特以上。 金屬氧化物變阻器（Meta卜Oxide Varistor，MOV)的 反應速度快，屬於奈秒（ns)級，和氣體放電裝置並聯在 一起，可以彌補氣體放電反應速度慢的缺點。變阻器的 崩潰電壓可以設計略高於氣體放電的直流電啟動電壓， 遇到直流或低速度的過電壓脈衝時，氣體放電啟動，但 麦阻器不動作；若遇到高速度的過電壓脈衝時，變阻器 先啟動’讓氣體放電裝置有足夠的時間啟動。當氣體放 電啟動後’其電弧電壓非常低，約2〇伏特，遠低於變阻 為、的崩潰電壓，所以變阻器關閉，過電壓的後續電流由 氣體放電疏導。 變阻器的崩潰電壓也可以設計略低於氣體放電的直 13 1231637 $欠動電壓，無論是直流電或是脈衝的 疋變阻器头, 之辦·者動，但隨著電流增大，變阻器的電壓也隨 : 當變阻器的電壓增大超過氣體放電的直流電啟 二壓後，氣體放電裝置啟動以疏導後續的高電流，變 外:則_。氣體放電裝置和變阻H的並聯結構還有另 項好處是萬一氣體放電裝置漏氣或破裂以致無法正 吊工作時’變阻11還可以提供備位f路保護的功能。 人故可將氣體放電技術與金屬氧化物變阻器（MOV)整 二在起，形成一顆兼具兩種技術優點的微型過電壓保 蔓破置δ月參閱第五A圖至第五c圖，其係為本發明之 =電裝置與變阻器結合之示意圖；如圖所示，其主要構 造包含一平面型基板200，係由變阻器材料燒結研磨而 ,，厚度約0.5毫米（mm)。基板2〇〇的兩面分別印製至 夕個上電極140 ' 150與至少一個下電極、17〇。工 業上常用之金屬氧化物變阻器的材料，是以氧化鋅粉末 為主體，添加氧化鉍、氧化鈷和氧化錳等其他粉末，均 勻攪拌後，經由攝氏1000度左右的高溫燒結而成。燒結 後的氧化辞晶粒大小約5〜30微米（//m )，是一種半導性 材料，絕緣的氧化錢燒結後則析出在氧化鋅的晶界，厚 度非常薄，約100奈米（nm)以下。一個氣化辞晶界的障 礙電壓約3〜4伏特（V)，因此氧化辞變阻器的崩潰電壓是 由電流流經晶界數目的多少決定，也就是由氧化鋅晶粒 的大小和變阻器的厚度決定。 完成至少一個上電極140、150與至少一個下電極 14 1231637 :60、170後即成為變阻器。上、下電極的製作可用銀— 吧導電膠，以網版或鋼版印刷方法印製在平面型基板· 上’再經由攝氏_度左右的高温燒結成為導電的厚膜 電極。上電極140和下電極170的前端重疊（長度L2*寬 度W1)，上電極150和下電極16〇、17〇的前端也有重疊 的區域（長度L1*寬度W2，長度L2*寬度W2)，上電極與 下電極的電流經由重疊的區域形成至少一個以基板厚^ 為導通路徑的變阻器。上下兩個電極之間的電容值是由 重疊區域的面積和基板200的厚度H決定，面積愈大， 厚度愈小，則電容值愈大。上下兩個電極之間的崩潰電 壓是由基板200的氧化辞晶粒大小和基板厚度Η決定， 例如氧化鋅平均晶粒大小為10微米（#m)，基板厚度是 〇· 5宅米（mm，500微米），則上電極140和下電極170之 間的崩潰電壓約為150〜200伏特（V) [ 50個晶粒*( 3-4) 伏特/晶界]。當上下兩電極間的電壓值超過額定的崩 潰電壓後，電流即導通，隨著電流增大，兩電極之間的 電壓值也增大。 在變阻器的上平面覆蓋一絕緣層620後，就成為上 述之放電裝置實施例中的平面型絕緣基板2〇〇。絕緣層 620覆蓋在上電極、15〇之上面，其材料可為玻璃或 其他氧化物。然後在絕緣層620的上面製作至少兩個放 電電極之第一電極102、第二電極104和第三電極106.， 再以絕緣板7〇〇在電極的上方形成中空結構，並製作封 口玻璃500在其四周。接著移入真空爐中並通入惰性氣 15 •1231637 體’溶化封口玻璃形成密封的中空放電空間4i〇，即完成 氣體放電裝置。端電極110、120和130將變阻器和氣體 放電兩個裝置連接在一起，形成並聯的結構。端電極110 連接放電電極102和變阻器的上電極140、下電極16〇 ; 端電極120則連接放電電極104和變阻器的下電極17〇。 所以放電電極102和1〇4組成的氣體放電裝置，與電極 140和170組成的變阻器形成並聯的結構。 · 如以上說明，有關於本發明之微型過電壓保護裝 . ====== 置，製作小尺寸且表面黏著型態的氣體放電裝置，並進 一步整合氣體放電和金屬氧化物變阻器成為單顆的扁平 春 面板大小約100* 100毫米（mm)， ，上面佈置很 多顆相同的元件，製作完成後，再以鑽石 割方式，分離成單顆元件。 再以鑽石刀片或雷射切The rear ends of the first electrode 102, the second electrode 104, and the second electrode 106 of the at least two discharge electrodes of the present invention extend to the edge of the substrate 200, and the corresponding first end electrode 110, The second terminal electrode 120 and the third terminal electrode 130 are externally connected. The material of the terminal electrode is usually a silver-containing conductive adhesive, which is coated on a predetermined position on the substrate. After heating, the solvent and adhesive are removed to form a solid conductive film. Sometimes, nickel and nickel are plated by electroplating. Solder to increase the bonding strength of the component to the circuit board. Therefore, the main structure of the discharge device of the present invention includes: a planar substrate 200; a first electrode 102, a second electrode 104, and a first electrode 106 of at least two discharge electrodes, which are bonded to the substrate, and A proper distance from each other; a hollow discharge space 41o, which contains the front ends of all discharge electrodes 12 1231637, is formed with a hollow structure over the electrodes by an insulating plate 700, and is sealed with a sealing glass 5GG on its periphery; and The first, second, and third end electrodes 110, 120, and 13 of the at least two end electrodes are adhered to the substrate and are individually connected to the first electrode 102 and the second electrode 104 of the discharge electrode. One-to-one connection with the rear end of the third electrode 106. Furthermore, the slow response is a disadvantage of gas discharge. Take a 250 volt (V) gas discharge tube as an example. The start-up voltage (DC Sparkover) at DC is 250 volts; but at 1 microsecond When the voltage pulse is 0 volts (100V /// S), the starting voltage is 475 volts; at a voltage pulse of 1000 volts per microsecond (1000V /// S), it must be 700 volts to start. The DC start-up voltage of gas discharge tubes used in industry is mostly between 75 volts and 600 volts, and a small part is more than 1,000 volts. Metal Oxide Varistors (Meta Oxide Varistor, MOV) have fast response speed, belong to the nanosecond (ns) class, and are connected in parallel with the gas discharge device, which can make up for the shortcoming of the slow gas discharge reaction speed. The breakdown voltage of the rheostat can be designed to be slightly higher than the DC starting voltage of the gas discharge. When encountering a DC or low-speed overvoltage pulse, the gas discharge starts, but the wheat resistor does not operate; if it encounters a high-speed overvoltage pulse, The varistor starts first 'to allow sufficient time for the gas discharge device to start. When the gas discharge is started, its arc voltage is very low, about 20 volts, which is much lower than the varistor breakdown voltage, so the varistor is turned off, and the subsequent current of the overvoltage is channeled by the gas discharge. The rupture voltage of the varistor can also be designed to be slightly lower than the direct discharge voltage of the gas discharge. No matter if it is a direct current or a pulsed chirped varistor head, it will move, but as the current increases, the varistor voltage also changes. : When the voltage of the varistor increases beyond the second voltage of the DC discharge of the gas discharge, the gas discharge device starts to divert the subsequent high current. The parallel structure of the gas discharge device and the variable resistance H has another advantage in that in the event that the gas discharge device leaks or ruptures so that it cannot work in the upright position, the 'variable resistance 11' can also provide the function of backup f-circuit protection. People can combine gas discharge technology and metal oxide varistor (MOV) to form a miniature overvoltage protection circuit with both technical advantages. See Figures 5A to 5c. It is a schematic diagram of the combination of an electric device and a varistor according to the present invention; as shown in the figure, its main structure includes a planar substrate 200, which is sintered and ground by a varistor material, and has a thickness of about 0.5 millimeters (mm). The two sides of the substrate 200 are printed to one upper electrode 140'150 and at least one lower electrode 170. The metal oxide varistor materials commonly used in the industry are mainly zinc oxide powder, and other powders such as bismuth oxide, cobalt oxide, and manganese oxide are added, and they are uniformly stirred and sintered at a high temperature of about 1000 degrees Celsius. The size of the oxidized crystal grains after sintering is about 5 ~ 30 micrometers (// m), which is a semiconductive material. After sintering, the insulating oxides precipitate on the grain boundaries of zinc oxide. The thickness is very thin, about 100 nm ( nm) or less. The barrier voltage of a gaseous crystal grain boundary is about 3 ~ 4 volts (V). Therefore, the breakdown voltage of an oxidative rheological resistor is determined by the number of currents flowing through the grain boundary, that is, the size of the zinc oxide grains and the thickness of the varistor. Decide. After completing at least one upper electrode 140, 150 and at least one lower electrode 14 1231637: 60, 170, it becomes a rheostat. The upper and lower electrodes can be made of silver-bar conductive paste, printed on a flat substrate by screen printing or stencil printing, and then sintered at a high temperature of about _ ° C to become a conductive thick-film electrode. The front ends of the upper electrode 140 and the lower electrode 170 overlap (length L2 * width W1), and the front ends of the upper electrode 150 and the lower electrodes 16 and 17 also have overlapping areas (length L1 * width W2, length L2 * width W2). The current of the electrode and the lower electrode forms at least one varistor with the substrate thickness ^ as the conduction path through the overlapping area. The capacitance value between the upper and lower electrodes is determined by the area of the overlapping area and the thickness H of the substrate 200. The larger the area and the smaller the thickness, the larger the capacitance value. The breakdown voltage between the upper and lower electrodes is determined by the oxide grain size of the substrate 200 and the thickness of the substrate. For example, the average grain size of zinc oxide is 10 microns (#m), and the thickness of the substrate is 0.5 m² (mm). , 500 microns), the collapse voltage between the upper electrode 140 and the lower electrode 170 is about 150 ~ 200 volts (V) [50 grains * (3-4) volts / grain boundary]. When the voltage between the upper and lower electrodes exceeds the rated collapse voltage, the current is conducted. As the current increases, the voltage between the two electrodes also increases. After the upper surface of the varistor is covered with an insulating layer 620, it becomes a planar insulating substrate 200 in the embodiment of the discharge device described above. The insulating layer 620 covers the upper electrode and 150, and the material may be glass or other oxides. Then, the first electrode 102, the second electrode 104, and the third electrode 106 of at least two discharge electrodes are fabricated on the insulating layer 620, and a hollow structure is formed over the electrodes with an insulating plate 700, and a sealing glass 500 is fabricated. Around it. Then move into the vacuum furnace and pass in an inert gas 15 • 1231637 The body ’s melting sealing glass forms a sealed hollow discharge space 4i0, and the gas discharge device is completed. The terminal electrodes 110, 120, and 130 connect the varistor and the gas discharge device together to form a parallel structure. The terminal electrode 110 is connected to the discharge electrode 102 and the upper electrode 140 and the lower electrode 160 of the varistor; the terminal electrode 120 is connected to the discharge electrode 104 and the lower electrode 170 of the varistor. Therefore, the gas discharge device composed of the discharge electrodes 102 and 104 is formed in parallel with the varistor composed of the electrodes 140 and 170. · As explained above, there is the micro-overvoltage protection device of the present invention. ====== device, to make a small size and surface-adhesive gas discharge device, and further integrate the gas discharge and metal oxide varistor into a single piece The flat spring panel has a size of about 100 * 100 millimeters (mm). Many identical components are arranged on it. After the production is completed, it is separated into a single component by diamond cutting. Cut with a diamond blade or laser
16 1231637 j圖式簡單說明】 f 一圖：習知技術之氣體放電管示意圖； ，二A圖：本發明之放電電極配置及製作之上視圖； ，二β圖··本發明之電極間絕緣層之示意圖； Α圖··本發明之另一放電電極配置及製作之正視圖； 第二B圖：本發明之另一放電電極配置及製作之第三A圖 之正視截面圖； 第四圖··本發明之放電裝置之正視截面圖； 第五A圖·本發㈣金屬氧化物變阻^的材料製作絲 之上視圖； 第五B圖：本發明以金屬氧化物變阻器的材基板 之第五A圖之正視截面圖； 第五C圖：本發明整合放電裝置與金屬氧 正視截面圖； 17 1231637 【圖號簡單說明】 102’第一放電電極 104’第二放電電極 106’第三放電電極 109’半導性材料線條 100’特殊材料 200’中空絕緣圓柱體 210’金屬薄膜 300’中空絕緣圓柱體 310’金屬薄片 410’中空腔體 102第一放電電極 104第二放電電極 106第三放電電極 108電極間絕緣層 110第一端電極 120第二端電極 130第三端電極 140變阻器上電極 150變阻器上電極 160變阻器下電極 170變阻器下電極 200基板 410放電空間 500封口玻璃 600黏結層 620絕緣層 700絕緣板 710凹陷區域 A 電極間距 B 電極間距 Η 基板厚度 W1寬度 W2寬度 L1長度 L2長度16 1231637 j Schematic illustration] f Picture 1: Schematic diagram of the gas discharge tube of the conventional technology; Figure 2A: Top view of the arrangement and fabrication of the discharge electrode of the present invention; Figure 2; · Insulation between the electrodes of the present invention Schematic diagram of the layers; Figure A. Front view of another discharge electrode configuration and fabrication of the present invention; Second Figure B: Front sectional view of the third A figure of another discharge electrode configuration and fabrication of the present invention; Fourth figure ·· Front sectional view of the discharge device of the present invention; Fig. 5A · Top view of the material production wire of the metal oxide varistors of the present invention; Fig. 5B: The substrate of the metal oxide varistors of the present invention The fifth sectional view of Figure A is a front view; the fifth sectional view of Figure C: a front sectional view of an integrated discharge device and metal oxygen of the present invention; 17 1231637 [Simplified description of the drawing number] 102 'first discharge electrode 104' second discharge electrode 106 'third Discharge electrode 109 'Semi-conductive material line 100' Special material 200 'Hollow insulating cylinder 210' Metal film 300 'Hollow insulating cylinder 310' Metal foil 410 'Hollow cavity 102 First discharge electrode 104 Second discharge 106 Third discharge electrode 108 Inter-electrode insulation layer 110 First end electrode 120 Second end electrode 130 Third end electrode 140 Varistor upper electrode 150 Varistor upper electrode 160 Varistor lower electrode 170 Varistor lower electrode 200 Substrate 410 Discharge space 500 Sealing glass 600 Adhesive layer 620 Insulation layer 700 Insulation plate 710 Depression area A Electrode pitch B Electrode pitch Η Substrate thickness W1 width W2 width L1 length L2 length
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