200427167 玖、發明說明： 【發明所屬之技術領域】 本發明係有關於一種過電壓保護裝置，其尤指一種 、 扁平式過電壓保護裝置，係揭露一運用氣體放電原理， · 透過同一平面之放電電極及一放電空間，且其為一種表 面黏著型態的過電壓保護元件，並進一步將氣體放電技 術與金屬氧化物變阻器（Meta卜Oxide Varistor，MOV)整 合在一起，形成一顆兼具兩種技術優點的微型過電壓保 護元件。 【先前技術】 钃 按電子及電機成品遭遇的暫態型過電壓型態，基本 上可分為三大類：靜電、雷擊及交流電源的突波。靜電 是一種瞬間高電壓，停留時間為奈秒(ns)級；雷擊的特 ^是高電流，停留時間是微秒（#s)級；交流電源的突波 停留時間最長，為毫秒(ms)級，也是這三種過電壓型態 中破壞能量最大的。 針對以上過電壓型態，現今工業上已有多種不同技 術方式的保護元件，多層次保護電子電機產品及使用者 0 的安全。以半導體製作的雪崩二極體，常使用在低電壓 的電子產品上防護靜電，其優點是反應速度快，缺點是 無法承受大電流，且漏電流及電容值偏大。閘流體 (Thyristor)是另一種以半導體技術製作的過電壓保護 兀件’可以承受一百安培以上的大電流，反應速度快， 但漏電流及電容值較大，通常使用於通信產品的雷擊保 護。金屬氧化物變阻器<;M〇v)是一種廣泛使用的突波吸收 為’通常疋以氧化鋅為主體，摻雜氧化级等其他氧化物 經高溫燒結而成，反應速度快及耐高電流，但漏電流及 電容值較大，而且經大電流多次衝擊後，其特性會衰變。 氣體放電管是密封的中空圓柱體結構，利用氣^分子在 高電壓下解離及撞擊其他氣體分子以傳遞電流的原理， 吸收突波。和其他保護元件比較’氣體放電管的财電流 能力最大’漏電流及電容值最低，但缺點是反應速度慢 而且啟動電壓較高，目前主要應用於雷擊及交流電源的 突波吸收。 以上依據不同技術的過電壓保護元件各有其優缺 點，沒有一種是完美理想的。工業上應用有時將兩種不 同技術的元件一起搭配使用，使其優缺點互補。外型上， 二極體、閘流體（Thyristor)及金屬氧化物變阻器（mov) 皆能提供扁平式產品，可以表面黏著型態固定在電路板 上二但反觀氣體放電管的圓柱體結構，卻不方便以表面 黏著方式固定在電路板上，而且高度太高，更不適合電 子產品輕薄短小的應用要求。 第一圖是習知技術的氣體放電管，包含兩個圓柱形的 主要電極第一放電電極102，及第二放電電極1〇4，，有 時會增加第三放電電極106，，電極材料通常是由銅構成 的’電極表面有時會塗佈一層特殊材料1〇〇，以增加放電 效能。放電空間是由中空的絕緣圓柱體200，和300，所 構成’其材質通常是90%以上純度的氧化鋁陶瓷。絕緣圓 柱體200’和3〇〇’的兩端，一般是以鎢或其金屬燒結一 層薄膜210’ ，作為絕緣體和電極結合的底材。絕緣體和 電極的結合，通常是使用銅_銀合金的薄片310，，在真 二爐中通入N性氣體，升南溫度使銅一銀合金薄片炼化， 冷卻後即將惰性氣體密封在腔體410，内。使用的惰性氣 體一般是氬氣和氖氣，有時會添加氦氣或其他氣體 放電特性。 " 有些氣體放電管會在絕緣體的内壁以半導體材料塗 佈一些線條109’來改進放電的反應速度。放電電極的間 距、電極的表面材質型態，以及氣體的種類和壓力是決 定氣體放電的重要因素。氣體放電管的電極間距八和B， 般疋控制在〇· 5-1· 〇毫米（mm)。當兩個電極間的電壓 高過額定值時，過電壓經由兩電極之間的氣體放電以疏 導，電極102’和1〇4，經由間距A，電極102，和1〇6, 經由間距B，電極1〇4，和1〇6，也經由間距b。 現今工業上使用之氣體放電管的外形尺寸，兩個電 極的產品最小外形是5*5毫米（mm，直徑*長度），三個電 極的產品最小外形約為6*8毫米（腿，直徑*長度）。通常 是經由引線110’ 、120，與130，，以插件方式固定在 電路板上’但是高度太高，整體尺寸太大，不適於電子 產品輕薄短小的應用要求。 因此’如何針對上述問題而提出一種新穎扁平式之 過電壓保護裝置，不僅可改善習知之氣體放電管的圓柱 體結構’卻不方便以表面黏著方式固定在電路板上，而 且高度太高之缺點，長久以來一直是使用者殷切盼望的。 【發明内容】 本發明之主要目的，在於提供一種扁平式過電壓保 護裝置’以平面型基板為載具，將至少兩個放電電極製 作黏結於基板上，且在放電電極的前端及其附近區域製 作一個中空的放電空間，以氣體放電方式吸收突波，以 具備耐電流、低電容值及低漏電流等特性。因其為一扁 平式產品，可以使用表面黏著方式固定在電路板上，以 符合電子產品輕薄短小之要求。 本發明之另一目的，在於提供一種反應速度快的扁 平式過電壓保護裝置，其係以金屬氧化物變阻器（M0V)的 材料製作基板，在基板的上下兩面製作電極，上方電極 與下方電極部分重疊，形成至少一個以基板厚度為導通 路徑的變阻器。然後在變阻器上方電極之上面製作一絕 緣層與氣體放電裝置’將氣體放電與金屬氧化物變阻琴 (MOV)兩種過電壓保護技術，並聯整合成單顆微形元件， 使其遇到高速度的過電壓脈衝時，反應快的變阻器先啟 動以壓制過電壓，讓反應速度慢的氣體放電裝置有足約 時間反應，以疏導後續的大電流。 本發明之再一目的，在於提供一種扁平式過電壓保 護裝置，其放電電極以薄膜方式製作在同一個平面上， 電極的間距儘可能縮小，以降低啟動電壓及提升反應速 度，以期將氣體放電的技術，運用到高速度的靜電保護。 【實施方式】 本發明係為一種扁平式過電壓保護的裝置，基本上 以氣體放電方式，保護電子及電機成品，使其免於受到 靜電、雷擊以及交流電源突波等暫態型過電壓的侵害。 其作法是將放電電極製作在一個平面型絕緣基板上，結 ，中空的放電㈣’並叫雜錄氣體密封 本 Μ的創新，更可以金屬氧化物變阻器的材料為美板本 電技術與金屬氧化物變阻器成為並聯i構的 以金屬氧化物變阻器改進氣體放電反 及習知技術氣體放電管的圓柱體結 不方便以表面黏著方定在電路板上，而 度太尚之缺點。 n 百先，請錢第二A 第二B圖，其係為本發明 之放電電極配置及製作之示意圖；如圖所示，本發明至 少兩個放電電極之第—電極⑽、第二電極1G4和第三電 極106，置放於同-平面，可以直接製作在基板上’· 該基板200係平面型態，可使用純度9〇%以上之氧化紹陶 变基板或平板玻璃。放電電極可以薄膜方法製造，在整 片基板2GG上先f作-層㈣的鉻姐當作黏結層，再 製作主要的電極材料銅、鎳或其他金屬；也可以在電極 ^料上再製作-層抗氧化金屬，例如白金。金屬層製作 完成後’再塗佈光阻和曝光顯影，並酬金屬膜製作出 預設的電極形狀及間距。 、放電電極必須具備—定的厚度，至少要u^Um) 二上’才能夠承受過電壓的高電流及多次使用後的電極 損耗。增加電極厚度比較經濟的方法是先以薄膜製程製 作出-層很薄的電極後，再以化學電鍍方法加厚。以薄 膜製私製作，f極關距可以作得非常小，1()微米（㈣ 或更小，最適用於高速度高電壓但能量較低的靜電保護。 200427167 本發明至少兩個放電電極之第一電極1〇2、第二電極 104和第三電極1〇6，也可以使用厚膜印刷方式製作。以 網版或鋼版印刷方法將銀-鈀導電膠直接印製到基板2〇〇 ’ 上’經過高溫去除其中的溶劑和黏結劑並燒結銀—把合金 - 即成為電極。故電極係直接黏結在基板上，其間距可以 做到250微米（//m)，電極的厚度約為1〇—3〇微米（#m)。 該至少兩個放電電極之第一電極1〇2、第二電極1〇4 和第三電極106配置在同一個平面上，因此當電極放電 時，電漿有可能沉積在電極之間，造成漏電流或短路現 象。通常放電電極間距愈小，疏導的能量愈大，重複工 < 作次數愈多，則電極之間漏電流或短路現象愈明顯。為 解決此一顧慮，得在兩電極之間製作一層财溫的絕緣層 108，隔離相鄰的兩個電極，避免沉積下來的電漿直接連 接到電極。耐溫絕緣層1〇8可以是聚亞醯胺 (Polyimide)、玻璃或其他氧化物，例如氧化鋁、氧化矽 等，以網版、鋼版印刷或曝光顯影及蝕刻方法製作，電 極放電的間距A和B則由絕緣層log的寬度決定。 放電電極經過多次使用後會產生損耗，尤其是在陰 極端，因此電極必須具備一定的厚度。過電壓的能量愈書 大，保護裝置重複工作的次數愈多，則電極厚度必須愈 厚。第三A圖及第三β圖係本發明另一製作電極之方法， 至少兩個放電電極之第一電極102、第二電極1〇4和第三 電極106,可以使用薄銅片，厚度約5〇—5〇〇微米（/zm)， 再加以電鑛耐氧化金屬，例如鑛鎳再鑛金。電極的形狀 和間距A和B的形成，可以兩種方式製作；其一是將整 10 蝕^金屬溥片以黏結層600和基板200結合，再以化學 用^式製作出預設的電極形狀與間距A和B。其二是使 黏ΙΪί成型的金屬薄片以黏結層6〇〇和基板200結合； 1Qf㈢/00的材料可為玻璃。該第一電極102、第二電極 产的f 一電極1〇6的前端得懸浮在基板200之上，其高 g略等於黏結層_的高度，其目的在於避免電極放 =日守產生的電漿沉積在電極之間，而造成相鄰兩電極之 間漏電流或短路。 以上有關於本發明放電電極配置及製作方法之實施200427167 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an overvoltage protection device, in particular, a flat-type overvoltage protection device, which discloses the principle of using a gas discharge to discharge through the same plane An electrode and a discharge space, which is a surface-adhesive overvoltage protection element, and further integrates the gas discharge technology with a metal oxide varistor (MOV) to form a combination of both Technical advantages of miniature overvoltage protection components. [Previous technology] 钃 According to the transient overvoltage types encountered by electronic and motor products, they can basically be divided into three categories: static electricity, lightning strikes and surges from AC power supplies. Static electricity is an instantaneous high voltage with a residence time in the nanosecond (ns) class; lightning strikes are characterized by high currents and the residence time is in the microsecond (#s) class; AC power surges have the longest residence time in milliseconds (ms) Level, is also the largest destruction energy of these three types of overvoltage. In view of the above over-voltage types, there are many different protection methods in the industry today to protect the safety of electronic motor products and users 0 at multiple levels. Avalanche diodes made of semiconductors are often used to protect static electricity on low-voltage electronic products. The advantages are fast response times, the disadvantage is that they cannot withstand large currents, and the leakage current and capacitance values are large. Thyristor is another kind of overvoltage protection element made by semiconductor technology. It can withstand a large current of more than 100 amps and has a fast response speed, but the leakage current and capacitance are large. It is usually used for lightning protection of communication products. . Metal oxide varistor < Mov) is a widely used surge absorber which is usually made of zinc oxide as the main body and doped with other oxides such as oxide grades after high temperature sintering, with fast reaction speed and high current resistance. , But the leakage current and capacitance value are large, and its characteristics will decay after a large current impact. The gas discharge tube is a sealed hollow cylinder structure. It uses the principle that gas molecules dissociate under high voltage and impinge on other gas molecules to transfer current, and absorb surges. Compared with other protection components, the gas discharge tube has the highest current capacity and the lowest leakage current and capacitance value. However, it has the disadvantages of slow response speed and high starting voltage. At present, it is mainly used for surge absorption of surges and AC power supplies. The above-mentioned overvoltage protection components based on different technologies have their own advantages and disadvantages, and none of them is perfect. Industrial applications sometimes use two different technology components together to complement their advantages and disadvantages. In appearance, the diode, the thyristor, and the metal oxide varistor (mov) can all provide flat products, which can be fixed on the circuit board with a surface-adhesive type. However, in contrast to the cylindrical structure of the gas discharge tube, It is inconvenient to be fixed on the circuit board by surface adhesion, and the height is too high, which is not suitable for the requirements of light, thin and short electronic products. The first figure is a conventional gas discharge tube, which includes two cylindrical main electrodes, a first discharge electrode 102 and a second discharge electrode 104, and sometimes a third discharge electrode 106 is added. The electrode material is usually The electrode surface, which is made of copper, is sometimes coated with a special material 100 to increase the discharge efficiency. The discharge space is composed of hollow insulating cylinders 200 and 300, and its material is usually an alumina ceramic with a purity of 90% or more. The ends of the insulating cylinders 200 'and 300' are generally sintered with tungsten or a metal film 210 'as a substrate for bonding the insulator and the electrode. The combination of insulator and electrode is usually made of copper_silver alloy sheet 310. N-type gas is passed into the real furnace. The temperature of the south is to refine the copper-silver alloy sheet. After cooling, the inert gas is sealed in the cavity. 410, within. The inert gases used are generally argon and neon, and sometimes helium or other gaseous discharge characteristics are added. " Some gas discharge tubes will coat lines 109 'with semiconductor material on the inner wall of the insulator to improve the reaction speed of the discharge. Discharge electrode spacing, electrode surface material type, and the type and pressure of the gas are important factors that determine the gas discharge. The electrode spacing of the gas discharge tube is eight and B, and generally 疋 is controlled at 0. 5-1 · 0 millimeters (mm). When the voltage between the two electrodes is higher than the rated value, the overvoltage is conducted through the gas discharge between the two electrodes, the electrodes 102 'and 104, via the gap A, the electrodes 102, and 106, via the gap B The electrodes 104 and 106 are also via the pitch b. The size of the gas discharge tube used in industry today. The minimum shape of the product with two electrodes is 5 * 5 mm (mm, diameter * length), and the minimum size of the product with three electrodes is about 6 * 8 mm (leg, diameter * length). It is usually fixed on the circuit board by plug-in means 110 ′, 120, and 130 through the leads 110 ′, but the height is too high, and the overall size is too large, which is not suitable for the requirements of thin, light and short electronic products. Therefore, 'how to propose a novel flat overvoltage protection device for the above problems can not only improve the cylindrical structure of the conventional gas discharge tube', but it is inconvenient to be fixed on the circuit board by surface adhesion, and the height is too high. , Has long been the eager hope of users. [Summary of the Invention] The main object of the present invention is to provide a flat over-voltage protection device, which uses a flat substrate as a carrier, and at least two discharge electrodes are bonded to the substrate, and the front end of the discharge electrode and the vicinity thereof are bonded. Make a hollow discharge space and absorb the surge by gas discharge to have the characteristics of current resistance, low capacitance and low leakage current. Because it is a flat product, it can be fixed on the circuit board by surface adhesion to meet the requirements of lightness, thinness and shortness of electronic products. Another object of the present invention is to provide a flat overvoltage protection device with a fast response speed. The flat overvoltage protection device is made of a metal oxide varistor (M0V) material, and electrodes are formed on the upper and lower sides of the substrate. The upper electrode and the lower electrode portion Overlap to form at least one varistor with the substrate thickness as the conduction path. Then, an insulation layer and a gas discharge device are fabricated on the upper electrode of the varistor. The two kinds of overvoltage protection technologies, gas discharge and metal oxide varistor (MOV), are integrated in parallel to form a single micro-shaped component, which makes it encounter high voltage. When the over-voltage pulse is at a high speed, the fast-response varistor is activated first to suppress the over-voltage, so that the gas-discharge device with a slow response has a sufficient time to respond to divert the subsequent large current. Yet another object of the present invention is to provide a flat overvoltage protection device in which the discharge electrodes are made on the same plane in a thin film manner, and the distance between the electrodes is reduced as much as possible to reduce the starting voltage and increase the reaction speed, so as to discharge the gas. Technology, applying high-speed electrostatic protection. [Embodiment] The present invention is a flat-type overvoltage protection device, which basically protects the finished products of electronics and motors by means of gas discharge from transient overvoltages such as static electricity, lightning strikes, and AC power surges. Violation. The method is to make the discharge electrode on a flat-type insulating substrate. The junction and hollow discharge ㈣ 'is also called the innovation of the hybrid gas seal, and the material of the metal oxide rheostat can be the US board technology and metal oxidation. The physical varistor becomes a parallel structure with metal oxide varistors to improve gas discharge. Conventional technology. The cylindrical junction of the gas discharge tube is inconvenient to be fixed on the circuit board by surface adhesion, and the disadvantage is too high. Baixian, please ask for the second A, second B, which is a schematic diagram of the configuration and fabrication of the discharge electrode of the present invention; as shown, the first electrode ⑽ and the second electrode 1G4 of at least two discharge electrodes of the present invention It is placed on the same plane as the third electrode 106, and can be directly fabricated on the substrate. The substrate 200 is a planar type, and an oxide-shaft ceramic substrate or flat glass with a purity of more than 90% can be used. The discharge electrode can be manufactured by a thin film method. On the entire substrate 2GG, the chromium layer is first made as a bonding layer, and then the main electrode material is copper, nickel, or other metals. It can also be made on the electrode material. Layer of anti-oxidant metal, such as platinum. After the production of the metal layer is completed, the photoresist and exposure are developed, and the metal film is prepared to have a preset electrode shape and pitch. 2. The discharge electrode must have a certain thickness, at least u ^ Um) to be able to withstand the high current of overvoltage and the electrode loss after repeated use. It is more economical to increase the thickness of the electrode by first making a thin-layer electrode in a thin film process, and then thickening it by chemical plating. Made of thin film, the f-pole clearance can be made very small, 1 (micron (㈣) or less, most suitable for high-speed, high-voltage but low-energy electrostatic protection. 200427167 One of at least two discharge electrodes of the present invention The first electrode 102, the second electrode 104, and the third electrode 106 can also be produced using a thick film printing method. The silver-palladium conductive paste is directly printed on the substrate 200 by a screen printing method or a stencil printing method. '上' After high temperature removes the solvent and adhesive and sinters the silver-turning the alloy into an electrode. Therefore, the electrodes are directly bonded to the substrate, and the distance between them can be 250 microns (// m). The thickness of the electrode is about 10-30 micrometers (#m). The first electrode 102, the second electrode 104, and the third electrode 106 of the at least two discharge electrodes are arranged on the same plane. The slurry may be deposited between the electrodes, causing leakage current or short circuit. Generally, the smaller the distance between the discharge electrodes, the greater the energy for grooming, and the greater the number of repetitions, the more obvious the leakage current or short circuit between the electrodes. To address this concern, A layer of financial insulation layer 108 is made between the electrodes to isolate the two adjacent electrodes, so that the deposited plasma is not directly connected to the electrodes. The temperature-resistant insulation layer 108 can be polyimide, glass or Other oxides, such as alumina and silicon oxide, are produced by screen printing, stencil printing or exposure development and etching methods, and the distance A and B between electrode discharges is determined by the width of the insulating layer log. After the discharge electrode has been used for many times There will be losses, especially at the cathode, so the electrode must have a certain thickness. The greater the energy of the overvoltage, the more the protective device is repeatedly operated, the thicker the electrode must be. The third A picture and the third β The figure shows another method for making electrodes according to the present invention. At least two discharge electrodes, a first electrode 102, a second electrode 104, and a third electrode 106, can use a thin copper sheet with a thickness of about 50-500 microns ( / zm), and then add anti-oxidation metal, such as ore nickel and then gold. The shape of the electrode and the formation of the distance A and B can be produced in two ways. 600 and 200 substrates Then, a predetermined electrode shape and a distance A and B are made by chemical formula. The second is to combine the bonded metal sheet with the bonding layer 600 and the substrate 200; the material of 1Qf㈢ / 00 may be glass. The front end of the f-electrode 106 produced by the first electrode 102 and the second electrode must be suspended above the substrate 200, and its height g is slightly equal to the height of the adhesive layer _. The slurry is deposited between the electrodes, causing leakage current or short circuit between two adjacent electrodes. The above is the implementation of the discharge electrode configuration and manufacturing method of the present invention.
例，所有的放電電極，直接製作在基板上，或是以黏結 層和基板結合。在相同製程下完成製作，尺寸可以精密 控制’電_之_ Α#α B也可以製作的比習知技術的 氣體放電管小。For example, all discharge electrodes are directly fabricated on the substrate, or they are bonded to the substrate with an adhesive layer. The production is completed under the same process, and the size can be precisely controlled. '电 _ 之 _ Α # α B can also be made smaller than the gas discharge tube of the conventional technology.
再者’請參閱第四圖，其係為本發明之中空放電空間 、、、口構和放電裴置之示意圖；如圖所示，該放電電極製作完 成後，接著分別在基板200與絕緣板700的四周製作封口 玻璃500，再將基板200與絕緣板700對位疊合並熔化玻 璃’使得絕緣板7〇〇在電極的上方形成一個中空結構，並 以封口玻璃5 0 0在四周密封，形成中空的放電空間。最後 印製端電極110、120和130，即成為一個完整的放電裝 置。 絕緣板700是耐溫的絕緣板，可使用純度9〇%以上的 氧化銘陶瓷基板或平板玻璃，厚度約〇· 5毫米（mm)。絕緣 板700上得製作一個凹陷的區域γιο，包含所有放電電極 的前端，以增大放電空間的高度。封口玻璃5〇〇的主要成 11 200427167 份是氧化鉛和氧化硼，是玻璃粉末和溶劑及黏結劑均勻攪 拌而成的玻璃膏，先以網版或鋼版印刷的方式印製在基板 200與絕緣板700的四周。再移入烤箱中，在攝氏1〇〇〜2〇() ^ 度溫度下揮發溶劑，·再以攝氏300〜400度在含有氧氣的氣 - 氛下，將黏結劑氧化成二氧化碳和水蒸氣去除，·最後再升 溫至玻璃的熔化點，將玻璃顆粒熔化連結，熔化點通常是 攝氏400〜600度，依玻璃的種類而異。 冷卻後的基板200與絕緣板700分別有一層封口玻 璃500覆蓋在其四周，·再將基板2〇〇與絕緣板7〇〇對位 疊合，置入真空爐中，通入惰性氣體，控制適當的氣壓 值，並加溫至玻璃的熔化點，讓封口玻璃5〇〇熔化連結， 冷卻後即將惰性氣體密封在内。封口玻璃5〇〇在真空爐 加溫熔化的過程中，若不通入任何氣體，冷卻後的密封 放電空間則成為真空狀態。 本發明至少兩個放電電極之第一電極1〇2、第二電極 104和第二電極1〇6的後端延伸至基板2〇〇的邊緣，藉由 相對應之第一端電極11〇、第二端電極12〇和第三端電極 130對外連接。端電極的材料常用的是含銀導電膠，塗佈 在基板上預設的位置，經過加溫去除其中的溶劑和黏結 m 劑，即成一固態的導電膜，有時另外以電鍍方式鍍上鎳 及焊錫，以增加元件對電路板的黏結強度。 故本發明放電裝置之主要構造包括：一平面型基板 200 至少兩個放電電極之第一電極102、第二電極1〇4 =第^電極106，其係黏結於該基板上，且彼此之間相距 一適當距離；一中空的放電空間410,包含所有放電電極 12 200427167 的刖端’係以絕緣板700在電極的上方形成中空社. 並以封口玻璃_在其四周密封；以及至少兩個端 之第一端電極no、第二端電極120和第三端電極13〇，. 係黏結於該基板上，且個別與放電電極之第一電極1〇2、 弟一電極104和苐二電極106的後端一對^一連接。 再者’反應速度較丨艾是氣體放電的一項缺點，以— $ 250伏特（V)的氣體放電管為例，在直流電時的啟動電 壓（DC Sparkover)為250伏特；但是在每微秒1〇〇伏特 (100V///S)電壓脈衝時，啟動電壓為475伏特；在每微 秒1000伏特（1000V//zs)電壓脈衝時必須700伏特才能 啟動。工業上應用的氣體放電管的直流電啟動電壓，大 部份是介於75伏特至600伏特之間，少部份是1〇〇〇伏 特以上。 金屬氧化物變阻器（Meta卜Oxide Varistor, MOV)的 反應速度快，屬於奈秒（ns)級，和氣體放電裝置並聯在 一起，可以彌補氣體放電反應速度慢的缺點。變阻器的 崩潰電壓可以設計略局於氣體放電的直流電啟動電壓， 遇到直流或低速度的過電壓脈衝時，氣體放電啟動，但 _ 變阻器不動作；若遇到高速度的過電壓脈衝時，變阻器 先啟動，讓氣體放電裝置有足夠的時間啟動。當氣體放 電啟動後，其電弧電壓非常低’約20伏特，遠低於變阻 器的崩潰電壓，所以變阻器關閉，過電壓的後續電流由 氣體放電疏導。 變阻器的崩潰電壓也可以設計略低於氣體放電的直 13 200427167 ，無論是直流電或是脈_過電壓時，總 :二動;但隨著電流增大’變阻器的電壓也隨 動雜後’氣體放電裝置啟動以疏導後續』 阻為關閉。氣體放電裝置和變阻器的並聯結構還有另 :-項：處是萬一氣體放電裝置漏氣或破裂以致無法正 吊作寸麦阻器還可以提供備位電路保護的功能。 ί 文了將氣體放電技術與金屬氧化物變阻器（Mov)整 S在I形成一顆兼具兩種技術優點的微型過電壓保 護裝置。請參閱第五A圖至第五C圖，其係為本發明^ 放電裝置與變阻器結合之示意圖；如圖所示，其主要構 造包含一平面型基板200，係由變阻器材料燒結研磨而 成，厚度約〇· 5毫米（匪）。基板200的兩面分別印製至 少一個上電極140、150與至少一個下電極160、17〇。工 業上常用之金屬氧化物變阻器的材料，是以氧化鋅粉末 為主體，添加氧化鉍、氧化鈷和氧化錳等其他粉末，均 句授拌後’經由攝氏1000度左右的高溫燒結而成。燒結 後的氧化鋅晶粒大小約5〜30微米（Am)，是一種半導性 材料；絕緣的氧化鉍燒結後則析出在氧化鋅的晶界，厚 度非常薄，約1〇〇奈米（nm)以下。一個氣化鋅晶界的障 礙電壓約3〜4伏特（V)，因此氧化鋅變阻器的崩潰電壓是 由電流流經晶界數目的多少決定，也就是由氧化鋅晶粒 的大小和變阻器的厚度決定。Furthermore, please refer to the fourth figure, which is a schematic diagram of the hollow discharge space, the structure, and the discharge structure of the present invention. As shown in the figure, after the discharge electrode is completed, it is then placed on the substrate 200 and the insulation plate, respectively. The sealing glass 500 is made around 700, and the substrate 200 and the insulating plate 700 are aligned and merged to melt the glass, so that the insulating plate 700 forms a hollow structure above the electrode, and is sealed with sealing glass 500 around it to form Hollow discharge space. Finally, the terminal electrodes 110, 120, and 130 are printed to form a complete discharge device. The insulating plate 700 is a temperature-resistant insulating plate. An oxide ceramic substrate or flat glass having a purity of 90% or more can be used, and the thickness is about 0.5 millimeters (mm). A recessed area γι must be made on the insulating plate 700, including the front ends of all the discharge electrodes to increase the height of the discharge space. The main components of sealing glass 500 are 11 200427167 parts are lead oxide and boron oxide, which are glass pastes that are evenly mixed with glass powder, solvent and adhesive. They are first printed on the substrate 200 and Around the insulating plate 700. Then move it into the oven and volatilize the solvent at a temperature of 100 ~ 20 ° C, and then oxidize the adhesive to carbon dioxide and water vapor at a temperature of 300 ~ 400 ° C in an atmosphere containing oxygen, · Finally, the temperature is raised to the melting point of the glass, and the glass particles are melted and connected. The melting point is usually 400 to 600 degrees Celsius, which varies according to the type of glass. After cooling, the substrate 200 and the insulating plate 700 are covered with a layer of sealing glass 500 respectively, and then the substrate 200 and the insulating plate 700 are superposed and placed in a vacuum furnace, and an inert gas is passed in to control Appropriate air pressure value, and warm to the melting point of the glass, let the sealing glass 500 melt and join, after cooling, the inert gas is sealed inside. When the sealing glass 500 is heated and melted in the vacuum furnace, the sealed discharge space after cooling will be in a vacuum state if no gas is passed in. The rear ends of the first electrode 102, the second electrode 104, and the second electrode 106 of the at least two discharge electrodes of the present invention extend to the edge of the substrate 200, and the corresponding first end electrodes 110, The second terminal electrode 120 and the third terminal electrode 130 are externally connected. The material of the terminal electrode is usually a silver-containing conductive adhesive, which is coated on a predetermined position on the substrate, and the solvent and the adhesive agent are removed by heating to form a solid conductive film, and sometimes nickel is plated by electroplating. And solder to increase the bonding strength of the components to the circuit board. Therefore, the main structure of the discharge device of the present invention includes: a flat substrate 200, at least two first electrodes 102 and second electrodes 104 = 106th electrodes, which are bonded to the substrate and between each other. A proper distance from each other; a hollow discharge space 410 containing all discharge electrodes 12 200427167. The end of the electrode is formed by an insulating plate 700 above the electrode. A hollow society is formed with sealing glass _ around it; and at least two ends The first terminal electrode no, the second terminal electrode 120, and the third terminal electrode 13 are bonded to the substrate and are individually connected to the first electrode 102, the first electrode 104, and the second electrode 106 of the discharge electrode. The back end is connected one-to-one. Furthermore, the response speed is a disadvantage of gas discharge. Taking a gas discharge tube of $ 250 volts (V) as an example, the starting voltage (DC Sparkover) at DC is 250 volts; but at every microsecond When the voltage is 100 volts (100V /// S), the starting voltage is 475 volts; when the voltage is 1000 volts per microsecond (1000V // zs), the voltage must be 700 volts to start. The DC start-up voltage of gas discharge tubes used in industry is mostly between 75 volts and 600 volts, and a small part is more than 1,000 volts. Metal Oxide Varistors (Meta Oxide Varistor, MOV) have fast response speed, belong to the nanosecond (ns) class, and are connected in parallel with the gas discharge device, which can make up for the shortcoming of the slow gas discharge reaction speed. The breakdown voltage of the varistor can be designed to be slightly lower than the DC starting voltage of the gas discharge. When encountering a DC or low-speed overvoltage pulse, the gas discharge starts, but the varistor does not operate; if it encounters a high-speed overvoltage pulse, the varistor Start first and allow enough time for the gas discharge device to start. When the gas discharge is started, its arc voltage is very low, about 20 volts, which is much lower than the breakdown voltage of the varistor, so the varistor is turned off, and the subsequent current of the overvoltage is channeled by the gas discharge. The rupture voltage of the varistor can also be designed to be slightly lower than that of the gas discharge. 13 200427167, whether it is DC or pulse_overvoltage, the total: two movements; but as the current increases, 'the varistor voltage also moves with the hybrid' gas The discharge device is activated to clear the subsequent resistance. The parallel structure of the gas discharge device and the varistor has another:-item: in case the gas discharge device leaks or ruptures so that it cannot be suspended upside down, the resistor can also provide the function of standby circuit protection. This paper describes the integration of gas discharge technology and metal oxide varistor (Mov) into a miniature overvoltage protection device with both technical advantages. Please refer to FIGS. 5A to 5C, which are schematic diagrams of a combination of a discharge device and a varistor according to the present invention; as shown in the figure, its main structure includes a planar substrate 200, which is sintered and ground from a varistor material. The thickness is about 0.5 mm (bandit). At least one upper electrode 140, 150 and at least one lower electrode 160, 170 are printed on both sides of the substrate 200, respectively. The metal oxide varistor materials commonly used in the industry are mainly zinc oxide powder, and other powders such as bismuth oxide, cobalt oxide, and manganese oxide are added, and they are sintered at a high temperature of about 1000 degrees Celsius. The sintered zinc oxide has a grain size of about 5 to 30 microns (Am) and is a semiconducting material; the insulating bismuth oxide precipitates on the grain boundaries of zinc oxide after sintering, and the thickness is very thin, about 100 nm ( nm) or less. The barrier voltage of a vaporized zinc grain boundary is about 3 to 4 volts (V), so the breakdown voltage of a zinc oxide varistor is determined by the number of currents flowing through the grain boundaries, that is, the size of the zinc oxide grains and the thickness of the varistor. Decide.
完成至少一個上電極14〇、150與至少一個下電極 心L 14 200427167 160、170後即成為變阻器。上、下電極的製作可用銀_ 鈀導電膠，以網版或鋼版印刷方法印製在平面型基板2〇〇 上，再經由攝氏900度左右的高溫燒結成為導^的厚膜 電極。上電極140和下電極170的前端重疊（長度L2木寬 度W1) ’上電極150和下電極160、17〇的前端也有重疊 的區域（長度L1*寬度W2，長度L2*寬度W2)，上電極與 下電極的電流經由重疊的區域形成至少一個以基板厚^ 為導通路徑的變阻器。上下兩個電極之間的電^值是二 重疊區域的面積和基板200的厚度η決定，面積俞大， 厚度愈小，則電容值愈大。上下兩個電極之間的崩潰電 壓疋由基板200的氧化鋅晶粒大小和基板厚度η決定， 例如氧化鋅平均晶粒大小為10微米（/zm)，基板厚度是 0. 5毫米（mm ’ 500微米）’則上電極ho和下電極wo之 間的崩潰電壓約為150〜200伏_ 5〇個晶粒* ( 3_4) 伏特/晶界]。當上下兩電極間的電壓值超過額定的崩 潰電壓後’電流即導通’隨著電流增大， 電壓值也增大。 N w 在Μ阻器的上平面覆蓋一絕緣層62Q後，就成為上 述之放電裝置實施例中的平面型絕緣基板咖。絕緣声 620覆蓋在上電極14〇、150之上面，其材料可么 =氧化物。然後在絕緣層㈣的上面製作至；兩個^ 1電極之第—電極102、第二電錢4和第三電極106， 再以絕緣板_在電極的上方形成中空結構，並製作封 口玻璃5GG在其四周。接著移人真空爐中並通入惰性氣 15 :’炫化封口玻璃形成密封的中空放電空間410，即完成 虱體放電裝置。端電極110、120和130將變阻器和氣體 敌電兩個裝置連接在一起，形成並聯的結構。端電極110 ，接放電電極102和變阻器的上電極140、下電極16〇 ; 電極120則連接放電電極1 〇4和變阻器的下電極17〇。 ^以放電電極102和1〇4組成的氣體放電裴置，與電極 40和170組成的變阻器形成並聯的結構。After completing at least one upper electrode 14 and 150 and at least one lower electrode core L 14 200427167 160 and 170, it becomes a rheostat. The upper and lower electrodes can be made of silver palladium conductive paste, printed on a flat substrate 200 by screen printing or stencil printing, and then sintered at a high temperature of about 900 degrees Celsius to form a conductive thick film electrode. The front ends of the upper electrode 140 and the lower electrode 170 overlap (length L2, wood width W1) 'The front ends of the upper electrode 150 and the lower electrodes 160, 170 also have overlapping areas (length L1 * width W2, length L2 * width W2), the upper electrode The current flowing through the lower electrode forms at least one varistor with the substrate thickness as a conduction path through the overlapping area. The electrical value between the upper and lower electrodes is determined by the area of the overlapping region and the thickness η of the substrate 200. The area is larger. The smaller the thickness, the larger the capacitance value. The breakdown voltage between the upper and lower electrodes 基板 is determined by the size of the zinc oxide grains of the substrate 200 and the thickness of the substrate η, for example, the average grain size of zinc oxide is 10 microns (/ zm), and the thickness of the substrate is 0.5 mm (mm ' 500 microns) 'then the breakdown voltage between the upper electrode ho and the lower electrode wo is about 150 ~ 200 volts_50 grains * (3_4 volts / grain boundary)]. When the voltage between the upper and lower electrodes exceeds the rated collapse voltage, the 'current is turned on' and as the current increases, the voltage value also increases. After N w is covered with an insulating layer 62Q on the upper surface of the M resistor, it becomes a planar insulating substrate in the above-mentioned embodiment of the discharge device. The insulating sound 620 covers the upper electrodes 14 and 150, and can the material be an oxide. Then, it is made on the insulating layer ；; the first electrode of the two ^ 1 electrodes-the electrode 102, the second battery 4 and the third electrode 106, and then an insulating plate is used to form a hollow structure above the electrode, and a sealing glass 5GG is produced. Around it. Then, move into a vacuum furnace and pass in an inert gas 15: ′ dazzle the sealing glass to form a sealed hollow discharge space 410 to complete the lice discharge device. The terminal electrodes 110, 120, and 130 connect the two devices of the varistor and the gas enemy, forming a parallel structure. The terminal electrode 110 is connected to the discharge electrode 102 and the upper electrode 140 and the lower electrode 160 of the varistor; the electrode 120 is connected to the discharge electrode 104 and the lower electrode 170 of the varistor. ^ A gas discharge composed of discharge electrodes 102 and 104 is arranged in parallel with a varistor composed of electrodes 40 and 170.
如以上說明，有關於本發明之微型過電壓保護裝 j，製作小尺寸且表面黏著型態的氣體放電裝置，並進 步整合氣體放電和金屬氧化物變阻器成為單顆的扁平 過電壓保護裝置，以金屬氧化物變阻器改電 應速度慢的較。生產±比較贿驗妓以整片面 夕反製作，面板大傾娜_毫米（mm)，上面佈置很 目同的元件，製作完成後，再以鑽石刀片或雷射切 °j方式，分離成單顆元株。 可供二Ϊ土货、一具有新顆性、進步性As described above, the micro-overvoltage protection device j of the present invention is used to make a small-sized and surface-adhesive gas discharge device, and to integrate the gas discharge and metal oxide varistor into a single flat overvoltage protection device. Metal oxide varistor should be slower to change electricity. Production ± Comparative bribery prostitutes are made on the entire surface, the panel is large _ millimeters (mm), the same components are arranged on the top, and after the production is completed, it is separated into single pieces by diamond blade or laser cutting ° j. Yuanyuan strain. Available for second-hand goods, one with newness and progress
要丄利爰用 並非用來限明之實施例而已 飾，均應包括於本發明之中物_=為與 16 200427167 【圖式簡單說明】 第一圖：習知技術之氣體放電管示意圖； 第二A圖：本發明之放電電極配置及製作之上視圖； 第二B圖：本發明之電極間絕緣層之示意圖； 第三A圖··本發明之另一放電電極配置及製作之正視圖； 第三B圖：本發明之另一放電電極配置及製作之第三A圖 之正視截面圖； 第四圖：本發明之放電裝置之正視截面圖； 第五A圖：本發明以金屬氧化物變阻器的材料製作基板 之上視圖， 第五B圖：本發明以金屬氧化物變阻器的材料製作基板 之第五A圖之正視截面圖； 第五C圖：本發明整合放電裝置與金屬氧化物變阻器之 正視截面圖； 17 200427167 【圖號簡單說明】 102’第一放電電極 104’第二放電電極 106’第三放電電極 109’半導性材料線條 100’特殊材料 200’中空絕緣圓柱體 210’金屬薄膜 300’中空絕緣圓柱體 310’金屬薄片 410’中空腔體 102第一放電電極 104第二放電電極 106第三放電電極 108電極間絕緣層 110第一端電極 120第二端電極 130第三端電極 140變阻器上電極 150變阻器上電極 160變阻器下電極 170變阻器下電極 200基板 410放電空間 500封口玻璃 600黏結層 620絕緣層 700絕緣板 710凹陷區域 A 電極間距 B 電極間距 Η 基板厚度 W1寬度 W2寬度 L1長度 L2長度In order to make good use of the examples which are not used to limit the details, they should be included in the present invention. _ = 为 与 16 200427167 [Simplified illustration of the diagram] The first picture: a schematic diagram of a conventional gas discharge tube; Figure A: Top view of the configuration and fabrication of the discharge electrode of the present invention; Figure B: The schematic view of the insulation layer between the electrodes of the present invention; Figure A: The front view of the configuration and manufacture of another discharge electrode of the present invention Figure 3B: a front cross-sectional view of a third A drawing of another discharge electrode configuration and fabrication of the present invention; Figure 4: a front cross-sectional view of a discharging device of the present invention; Figure 5A: the present invention uses metal oxidation Top view of the substrate of the material varistor, Fifth B: the front sectional view of the fifth A of the substrate made of the material of the metal oxide varistor according to the present invention; Fifth C: the integrated discharge device and the metal oxide of the present invention Front sectional view of rheostat; 17 200427167 [Simplified description of drawing number] 102 'first discharge electrode 104' second discharge electrode 106 'third discharge electrode 109' semi-conductive material line 100 'special material 200' Hollow insulating cylinder 210 'Metal film 300' Hollow insulating cylinder 310 'Metal sheet 410' Hollow cavity 102 First discharge electrode 104 Second discharge electrode 106 Third discharge electrode 108 Insulating layer 110 between electrodes First end electrode 120th Second terminal electrode 130 Third terminal electrode 140 Rheostat upper electrode 150 Rheostat upper electrode 160 Rheostat lower electrode 170 Rheostat lower electrode 200 Substrate 410 Discharge space 500 Sealing glass 600 Adhesive layer 620 Insulation layer 700 Insulation plate 710 Recessed area A Electrode distance B Electrode distance厚度 Substrate thickness W1 width W2 width L1 length L2 length
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