CN102709010A - Multilayer varistor and preparation method for same - Google Patents
Multilayer varistor and preparation method for same Download PDFInfo
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- CN102709010A CN102709010A CN2012101881144A CN201210188114A CN102709010A CN 102709010 A CN102709010 A CN 102709010A CN 2012101881144 A CN2012101881144 A CN 2012101881144A CN 201210188114 A CN201210188114 A CN 201210188114A CN 102709010 A CN102709010 A CN 102709010A
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- zno
- sio
- sno
- porcelain
- ball milling
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Abstract
The invention discloses a multilayer varistor and a preparation method for the same. The multilayer varistor comprises a varistor body and an internal electrode in a porcelain body, wherein the varistor body consists of a ZnO-Bi2O3-SiO2-SnO2 porcelain system; and the internal electrode is a pure Ag electrode. The varistor is high in electrical property and low in production cost.
Description
Technical field
The present invention relates to electronic devices and components, relate in particular to a kind of multilayer pressure sensitive resistor and preparation method thereof.
Background technology
Along with popularizing of mobile communication equipment; Volume reduce the reduction with required supply voltage; The protection of its anti-overvoltage, Electrostatic Discharge is become become more and more important, and also obtained application widely as the multilayer chip varistor of the first-selected element of best element of surge protection in the circuit and ESD protection.At present, produce multilayer chip varistor porcelain system and inner electrode system in the world and mainly contain following four kinds of situation:
1, ZnO-Bi
2O
3System, pure Pd of electrodes use or Pd30/Ag70 system in it, the shortcoming that these two kinds of systems combine mainly contains 4 points:
Bi element in the porcelain body and the Pd element generation chemical reaction in the interior electrode have certain harmful effect to the electrical property of product.
production cost is high, exceeds more than 3 times than electrode in the pure Ag.The product firing temperature of
this system is higher; Generally, be unfavorable for saving energy and reduce the cost more than 1000 ℃.4. voltage gradient is higher than 450V/mm, not too is fit to produce the product of pressure sensitive voltage 5V series.
2, ZnO-Pr
6O
11System, the pure Pt of electrodes use in it, the shortcoming that these two kinds of systems combine mainly contains 2 points:
1. production cost is high, exceeds more than 10 times than electrode in the pure Ag.2. the product sintering temperature is very high, more than 1280 ℃, is unfavorable for saving energy and reduce the cost.
3, ZnO-V
2O
5System, interior electrodes use Pd/Ag alloy, shortcoming: the non-constant of the electrical property of product (non linear coefficient is low, leakage current is big, anti-current impact difference etc.), poor reliability, interior electrode contains Pd, the production cost height.
4, ZnO-glass system, interior electrodes use Pd/Ag alloy, shortcoming: the non-constant of the electrical property of product, voltage gradient is higher than more than the 700V/mm, and interior electrode contains Pd, and production cost is high.
Summary of the invention
The technical problem that the present invention will solve provides that a kind of production cost is low, the multilayer pressure sensitive resistor of good electrical property and preparation method thereof.
The technical problem that the present invention will solve realizes through following technical scheme: a kind of multilayer pressure sensitive resistor, comprise the piezo-resistance body, and the interior electrode in the porcelain body, described piezo-resistance body is by ZnO-Bi
2O
3-SiO
2-SnO
2Be that the porcelain system is formed, described interior electrode is pure Ag electrode.Described ZnO-Bi
2O
3-SiO
2-SnO
2Be the porcelain system, its concrete mole formula constituent is ZnO 87.5～92.8mol%, Bi
2O
30.5～3.0 mol%, SiO
20.5～2.5mol%, SnO
20.5～2.0mol%, Sb
2O
30.5～2.0mol%, TiO
20.5～2.5mol%, Co
3O
40.3～1.0mol%, MnCO
30.5～1.0mol%, Cr
2O
30.2～0.5mol%, Nd
2O
30.01～0.1mol%, Al (NO
3)
3.9H
2O 0.003～0.01mol%.
The present invention also provides the preparation method of above-mentioned multilayer pressure sensitive resistor; Comprise batching, batching ball milling, curtain coating, moulding, drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end, plating, test step, it is characterized in that: described batching ball milling is the Bi in will filling a prescription earlier
2O
3, SiO
2, SnO
2, Sb
2O
3, TiO
2, Co
3O
4, MnCO
3, Cr
2O
3, Nd
2O
3, Al (NO
3)
3.9H
2After the O mixing and ball milling, and then with main material ZnO batching ball milling.In the described sintering circuit, under 880 ℃～960 ℃ temperature, be incubated 5 ± 1 hours.
Compared with prior art, the present invention adopt 1, ZnO-Bi
2O
3-SiO
2-SnO
2Be the porcelain system, utilize nanometer technology and liquid-phase sintering principle, through adding low melting point additive such as Bi
2O
3, SiO
2, SnO
2Form the sintering temperature that cenotype reduces porcelain Deng the formation solid solution or with principal crystalline phase, technology is simple, and production cost is low, and is effective.2, through suitably reducing the ratio such as the Sb of grain inhibitor
2O
3Or interpolation grain growth agent such as TiO
2Waiting the voltage gradient that reduces porcelain is 300V/mm (reducing more than the 150V/mmm than prior art voltage gradient), is fit to produce the product below the pressure sensitive voltage 8V.3, because the coefficient of expansion of silver paste of inner electrode is bigger than ZnO porcelain body, thereby matching between the two is relatively poor, through in silver-colored slurry system, adding 10～30% inorganic glass materials such as Bi
2O
3, SiO
2,ZnO etc. help to reduce the coefficient of expansion of silver slurry, thereby guarantee both shrinkages and the consistency of the coefficient of expansion, prevent that segregation phenomenon from appearring in silver layer and dielectric layer, and realization silver layer and dielectric layer are combined closely, and improve the overall performance of product.4, because the interior pulp material of the present invention does not contain Pd; Therefore chemical reaction does not take place in porcelain material and interior electrode; Can not produce destruction, so some main electric parameters of product will increase, can reach (prior art:＞1 μ A) below the 1 μ A like leakage current to the electrical property of product; Limit voltage ratio can reach that (prior art:＞1.50), peak current density can reach 5000A/cm below 1.50
2(prior art: 3500A/cm
2) etc.5, the present invention is owing to the pure Ag of interior electrodes use, and its production cost can descend 75% than prior art.6, the sintering temperature of product of the present invention can be reduced to 880 ℃, and is lower more than 100 ℃ than prior art, helps saving energy and reduce the cost.
Embodiment
Purport of the present invention is to adopt ZnO-Bi
2O
3-SiO
2-SnO
2Be the porcelain system, with pure Ag as interior electrode, the utilization nanometer technology, liquid phase sintering technology, the chip component production technology is developed have low-temperature sintering (880 ℃), low cost, low-voltage gradient (300V/mm), high performance multilayer chip varistor.Below in conjunction with embodiment content of the present invention is done further to detail, mentioned content is not to qualification of the present invention among the embodiment, and material prescription is selected to suit measures to local conditions and the result is not had substantial influence.
Embodiment 1
A kind of multilayer pressure sensitive resistor comprises the piezo-resistance body, and the interior electrode in the porcelain body, and described piezo-resistance body is by ZnO-Bi
2O
3-SiO
2-SnO
2Be that the porcelain system is formed, described interior electrode is pure Ag electrode.Described ZnO-Bi
2O
3-SiO
2-SnO
2Be the porcelain system, its concrete mole formula constituent is ZnO 91.0mol%, Bi
2O
32.0 mol%, SiO
21.0mol%, SnO
21.0mol%, Sb
2O
31.2mol%, TiO
21.5mol%, Co
3O
41.0mol%, MnCO
30.7mol%, Cr
2O
30.5mol%, Nd
2O
30.05mol%, Al (NO
3)
3.9H
2O 0.006mol%.Its preparation method comprises batching, batching ball milling, curtain coating, moulding, drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end, plating, test, one-tenth product examine, braid/packing, warehouse-in operation, and described batching ball milling is the Bi in will filling a prescription earlier
2O
3, SiO
2, SnO
2, Sb
2O
3, TiO
2, Co
3O
4, MnCO
3, Cr
2O
3, Nd
2O
3, Al (NO
3)
3.9H
2After the O mixing and ball milling, and then with main material ZnO batching ball milling.Process 0402 products, wherein thickness of dielectric layers is designed to 25 μ m, 8 layers of the numbers of plies, and 880 ℃ of sintering temperatures are incubated 5 hours.The product unit for electrical property parameters is good, and is as shown in table 1 below:
Table 1
Embodiment 2
Porcelain and element technology are with embodiment 1, and product specification is 0805 product, and wherein thickness of dielectric layers is designed to 50 μ m, 5 layers of the numbers of plies, and 880 ℃/5h of sintering temperature,
The product unit for electrical property parameters is good, and is as shown in table 2:
Table 2
Embodiment 3
Porcelain and element technology are with embodiment 1, and product specification is 1812 products, and wherein thickness of dielectric layers is designed to 100 μ m, 10 layers of the numbers of plies, and 880 ℃/5h of sintering temperature,
The product unit for electrical property parameters is good, and is as shown in table 3:
Table 3
1-3 can find out from table, the pressure-sensitive device that the present invention makes, and the main electric parameters performance is good.
Claims (4)
1. a multilayer pressure sensitive resistor comprises the piezo-resistance body, and the interior electrode in the porcelain body, and it is characterized in that: described piezo-resistance body is by ZnO-Bi
2O
3-SiO
2-SnO
2Be that the porcelain system is formed, described interior electrode is pure Ag electrode.
2. multilayer pressure sensitive resistor according to claim 1 is characterized in that: described ZnO-Bi
2O
3-SiO
2-SnO
2Be the porcelain system, its concrete mole formula constituent is ZnO 87.5～92.8mol%, Bi
2O
30.5～3.0 mol%, SiO
20.5～2.5mol%, SnO
20.5～2.0mol%, Sb
2O
30.5～2.0mol%, TiO
20.5～2.5mol%, Co
3O
40.3～1.0mol%, MnCO
30.5～1.0mol%, Cr
2O
30.2～0.5mol%, Nd
2O
30.01～0.1mol%, Al (NO
3)
3.9H
2O 0.003～0.01mol%.
3. the preparation method of a multilayer pressure sensitive resistor according to claim 1 and 2; Comprise batching, batching ball milling, curtain coating, moulding, drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end, plating, test step, it is characterized in that: described batching ball milling is the Bi in will filling a prescription earlier
2O
3, SiO
2, SnO
2, Sb
2O
3, TiO
2, Co
3O
4, MnCO
3, Cr
2O
3, Nd
2O
3, Al (NO
3)
3.9H
2After the O mixing and ball milling, and then with main material ZnO batching ball milling.
4. preparation method according to claim 3 is characterized in that: in the described sintering circuit, under 880 ℃～960 ℃ temperature, be incubated 5 ± 1 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210188114.4A CN102709010B (en) | 2012-06-08 | 2012-06-08 | Multilayer varistor and preparation method for same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210188114.4A CN102709010B (en) | 2012-06-08 | 2012-06-08 | Multilayer varistor and preparation method for same |
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| CN102709010A true CN102709010A (en) | 2012-10-03 |
| CN102709010B CN102709010B (en) | 2015-03-25 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396116A (en) * | 2013-08-13 | 2013-11-20 | 广东风华高新科技股份有限公司 | Zinc-oxide piezoresistor raw material, preparation method thereof and piezoresistor |
| CN103646738A (en) * | 2013-12-13 | 2014-03-19 | 中国西电电气股份有限公司 | Preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN105355429A (en) * | 2015-10-13 | 2016-02-24 | 广州创天电子科技有限公司 | Voltage-sensitive ceramic powder and obtained piezoresistor |
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| US5369390A (en) * | 1993-03-23 | 1994-11-29 | Industrial Technology Research Institute | Multilayer ZnO varistor |
| CN1165125A (en) * | 1995-08-31 | 1997-11-19 | 松下电器产业株式会社 | Zinc oxide ceramics composition and its manufacture method and zinc oxide nonlinear resistance |
| CN101239819A (en) * | 2007-09-14 | 2008-08-13 | 中国南玻集团股份有限公司 | Method for preparing sheet type multilayer zinc oxide pressure-sensitive electric resistance ceramic powder |
| CN102351527A (en) * | 2011-07-13 | 2012-02-15 | 温州益坤电气有限公司 | Formula of low-cost resistor disc for zinc oxide arrester |
| CN102476949A (en) * | 2011-11-10 | 2012-05-30 | 中国科学院过程工程研究所 | Method for preparing electrical property-controllable zinc oxide (ZnO) piezoresistor material at low temperature |
-
2012
- 2012-06-08 CN CN201210188114.4A patent/CN102709010B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369390A (en) * | 1993-03-23 | 1994-11-29 | Industrial Technology Research Institute | Multilayer ZnO varistor |
| CN1165125A (en) * | 1995-08-31 | 1997-11-19 | 松下电器产业株式会社 | Zinc oxide ceramics composition and its manufacture method and zinc oxide nonlinear resistance |
| CN101239819A (en) * | 2007-09-14 | 2008-08-13 | 中国南玻集团股份有限公司 | Method for preparing sheet type multilayer zinc oxide pressure-sensitive electric resistance ceramic powder |
| CN102351527A (en) * | 2011-07-13 | 2012-02-15 | 温州益坤电气有限公司 | Formula of low-cost resistor disc for zinc oxide arrester |
| CN102476949A (en) * | 2011-11-10 | 2012-05-30 | 中国科学院过程工程研究所 | Method for preparing electrical property-controllable zinc oxide (ZnO) piezoresistor material at low temperature |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396116A (en) * | 2013-08-13 | 2013-11-20 | 广东风华高新科技股份有限公司 | Zinc-oxide piezoresistor raw material, preparation method thereof and piezoresistor |
| CN103396116B (en) * | 2013-08-13 | 2014-10-01 | 广东风华高新科技股份有限公司 | Zinc-oxide piezoresistor raw material, preparation method thereof and piezoresistor |
| CN103646738A (en) * | 2013-12-13 | 2014-03-19 | 中国西电电气股份有限公司 | Preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN103646738B (en) * | 2013-12-13 | 2016-08-24 | 中国西电电气股份有限公司 | A kind of preparation method of high-resistance layer for side surface of zinc oxide resistor disc |
| CN105355429A (en) * | 2015-10-13 | 2016-02-24 | 广州创天电子科技有限公司 | Voltage-sensitive ceramic powder and obtained piezoresistor |
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| Publication number | Publication date |
|---|---|
| CN102709010B (en) | 2015-03-25 |
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