TWI384500B - Composition of varistors and process for manufacturing varistors made from the same - Google Patents
Composition of varistors and process for manufacturing varistors made from the same Download PDFInfo
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Description
本發明利用核殼結構來製作過電壓保護元件的陶瓷材料，其中核的部分主要由半導體或導體材料所組成，而殼的部分則是由適當組成的玻璃材料所組成。 The invention utilizes a core-shell structure to fabricate a ceramic material of an overvoltage protection component, wherein the core portion is mainly composed of a semiconductor or a conductor material, and the shell portion is composed of a suitably composed glass material.
半導體技術的發展，大量運用半導體零件的設備、控制器及通訊產品也迅速發展，並且使產品進一步產生多功能化及小型化。另一方面，使用這些半導體零件的設備或是線路，會因半導體元件對過電壓、突波及雜訊的脆弱性，不可避免的也會受到傷害。如何提供一個穩定的線路電壓，保護這類半導體元件使其免於受不正常過電壓雜訊破壞是一個重要課題。為了解決這個問題，開發一種具有對過電壓及雜訊敏感，且可吸收大電流、價格又不貴的元件是各廠家努力的方向。 With the development of semiconductor technology, equipment, controllers, and communication products that make extensive use of semiconductor components are also rapidly developing, and the products are further multi-functionalized and miniaturized. On the other hand, devices or circuits using these semiconductor components are inevitably damaged by the fragility of the semiconductor components to overvoltages, surges, and noise. How to provide a stable line voltage and protect such semiconductor components from abnormal over-voltage noise is an important issue. In order to solve this problem, it is a direction for manufacturers to develop a component that is sensitive to overvoltage and noise, and can absorb large current and is inexpensive.
有相當多的系統具有突波吸收器的功能，例如SrTiO3、SiC、ZnO、Fe2O3、SnO2、TiO2、BaTiO3及Diode等，但各系統的突波吸收或是靜電吸收能力也不相同，加上因為各種特性的限制，並非所有的材料均具有商品化的機會。 There are quite a few systems with the functions of surge absorbers, such as SrTiO 3 , SiC, ZnO, Fe 2 O 3 , SnO 2 , TiO 2 , BaTiO 3 and Diode, but the surge absorption or electrostatic absorption capability of each system. It is also different, and because of the limitations of various characteristics, not all materials have the opportunity to be commercialized.
矽基二極體主要是利用PN介面來產生突波吸收器的功能，因此，元件具有方向性且有較高崩潰電壓產品，元件有較小的突波吸收能力的缺點，而ZnO、TiO2、SnO2、SrTiO3突波吸收器主要是利用半導化的晶粒及晶界絕緣層來產生突波吸收器的特性，但是TiO2突波吸收器需較高溫燒結，才有需求的特性。主要因SnO2突波吸收器也須高溫燒結，而且材料的燒結性較差。SrTiO3突波吸收器除了需高溫燒結外，還有需使用還原氣氛燒結的問題。Fe2O3及BaTiO3突波吸收器的特性主要來自電極與陶瓷體間的界面，故元件的電性特性較差且不易做高壓元件。 The ruthenium-based diode mainly uses the PN interface to generate the function of the surge absorber. Therefore, the component has directionality and has a high breakdown voltage product, and the component has the disadvantage of small swell absorption capability, and ZnO, TiO 2 The SnO 2 and SrTiO 3 surge absorbers mainly use semi-conducting grains and grain boundary insulating layers to produce the characteristics of the surge absorber, but the TiO 2 surge absorber requires higher temperature sintering to have the required characteristics. . The SnO 2 surge absorber is also mainly sintered at a high temperature, and the sinterability of the material is poor. In addition to high-temperature sintering, the SrTiO 3 surge absorber has a problem of sintering using a reducing atmosphere. The characteristics of the Fe 2 O 3 and BaTiO 3 surge absorbers mainly come from the interface between the electrodes and the ceramic body, so the electrical characteristics of the components are poor and it is difficult to make high voltage components.
如前所述，電性特性較佳的產品，如以ZnO、TiO2、SnO2、SrTiO3 等原料製作的突波吸收器，其突波吸收特性的產生機構，主要來自半導化的晶粒與晶界絕緣層的介面，而這些晶界絕緣層主要是由結晶相所組成，例如晶界相為α-Bi2O3、Na2O或是SrTiO3等，故元件的製作過程一定需要經較高溫燒結才能完成。 As mentioned above, products with better electrical properties, such as surge absorbers made of ZnO, TiO 2 , SnO 2 , SrTiO 3 , etc., have a mechanism for generating the shock absorption characteristics, mainly from semi-conductive grains. Interfacial with the grain boundary insulating layer, and these grain boundary insulating layers are mainly composed of a crystalline phase, for example, the grain boundary phase is α-Bi 2 O 3 , Na 2 O or SrTiO 3 , etc., so the fabrication process of the component is necessary It can be completed by higher temperature sintering.
本發明提出一種新的陶瓷材料配方組成，具有核殼結構，利用導體或是半導體材料當作陶瓷材料的核結構，而具有絕緣特性的玻璃材料當作陶瓷材料的殼結構的主要成分。所述陶瓷材料具突波吸收特性，可用於製作突波吸收器元件，且在元件的製作過程，可以使用較低溫度燒結，又一般燒結溫度約600~1000℃。突波吸收器元件的電氣特性可以由所述陶瓷材料的核結構的材料晶粒大小與特性、殼結構的材料厚度、殼結構的材料絕緣阻抗、甚至突波吸收器的兩平行電極間的間距及電極材料的重疊面積等參數決定。 The invention proposes a new ceramic material composition composition, having a core-shell structure, using a conductor or a semiconductor material as a core structure of a ceramic material, and a glass material having an insulating property as a main component of a shell structure of a ceramic material. The ceramic material has a surge absorption characteristic and can be used for fabricating a surge absorber element, and in the fabrication process of the component, sintering can be performed at a lower temperature, and the sintering temperature is generally about 600 to 1000 °C. The electrical characteristics of the surge absorber element may be determined by the grain size and characteristics of the core structure of the ceramic material, the material thickness of the shell structure, the material insulation resistance of the shell structure, and even the spacing between the two parallel electrodes of the surge absorber. And the parameters such as the overlapping area of the electrode material are determined.
本發明利用核殼結構來製作過電壓保護元件的陶瓷材料配方組成，其中核的部分(以下稱核材料)主要由半導體或導體材料所組成，而殼的部分(以下稱殼材料)則是由玻璃等絕緣材料所組成。其中構成核材料的半導體材料可以是下面任一種的其中一或兩種以上所組成，如SiC、SrTiO3、Fe2O3、SnO2、TiO2、ZnO等；而構成核材料的導體材料可以是下面任一種的其中一或兩種以上所組成，如Al、Ag、Pt、Pd、Ni、Cu、Fe、Au等。又構成殼材料的玻璃絕緣材料可以是一般矽玻璃、硼玻璃、矽鋁玻璃、磷玻璃或鉛玻璃等材料。 The invention utilizes a core-shell structure to form a ceramic material composition of an over-voltage protection component, wherein a core portion (hereinafter referred to as a nuclear material) is mainly composed of a semiconductor or a conductor material, and a portion of the shell (hereinafter referred to as a shell material) is composed of It consists of insulating materials such as glass. The semiconductor material constituting the core material may be composed of one or more of any one of the following, such as SiC, SrTiO3, Fe2O3, SnO2, TiO2, ZnO, etc.; and the conductor material constituting the core material may be any of the following One or two or more compositions such as Al, Ag, Pt, Pd, Ni, Cu, Fe, Au, and the like. Further, the glass insulating material constituting the shell material may be a material such as general bismuth glass, borosilicate glass, bismuth aluminum glass, phosphor glass or lead glass.
本發明的主要目的是提供一種具有突波吸收器特性的陶瓷材料配方組成，而且所述陶瓷材料配方可以應用於製成單層型、積層型突波吸收器，尤其是促成突波吸收器元件的電氣可以視需要任意調整。 The main object of the present invention is to provide a ceramic material formulation having a surge absorber characteristic, and the ceramic material formulation can be applied to form a single layer type, laminated type surge absorber, especially to promote a surge absorber element. The electrical can be adjusted as needed.
本發明的另一目的是提供一種電壓可任意調整的突波吸收器的製造方法，利用精確控制核材料的晶粒尺寸大小、殼材料的絕 緣層厚度、殼材料的絕緣層電阻率及電極重疊面積等參數來調整元件的微觀結構及製程中的生胚厚度，以調整製造出來的突波吸收器元件的電氣特性。 Another object of the present invention is to provide a method for manufacturing a surge absorber with arbitrarily adjustable voltage, which utilizes precise control of the grain size of the core material and the shell material. Parameters such as the thickness of the edge layer, the resistivity of the insulating layer of the shell material, and the overlap area of the electrodes are used to adjust the microstructure of the element and the thickness of the green body in the process to adjust the electrical characteristics of the manufactured surge absorber element.
本發明的另一目的是提供一種精確控制突波吸收器電壓的製造方法，由於使用的陶瓷材料配方組成的殼材料是可低溫燒結的玻璃材料且與核材料幾乎沒有反應，故可以精確的控制最終產品的微觀結構，因此，可以精確的控制元件的電氣特性。 Another object of the present invention is to provide a manufacturing method for accurately controlling the voltage of a surge absorber. Since the shell material composed of the ceramic material formulation is a low-temperature sintered glass material and has little reaction with the nuclear material, it can be precisely controlled. The microstructure of the final product, therefore, allows precise control of the electrical characteristics of the component.
如第一圖所示，本發明的陶瓷材料的微結構，具有核殼結構，其配方組成主要是選用導體或是半導體材料當作核材料1，另外選擇玻璃材料當作殼材料2。上述陶瓷材料可以以一般標準陶瓷製程做成單一陶瓷元件，且所製成的陶瓷元件具有優異的突波吸收特性，可以應用於製作過電壓保護元件。 As shown in the first figure, the microstructure of the ceramic material of the present invention has a core-shell structure, and its formulation mainly uses a conductor or a semiconductor material as the core material 1, and a glass material is selected as the shell material 2. The above ceramic material can be made into a single ceramic component in a general standard ceramic process, and the ceramic component produced has excellent surge absorption characteristics and can be applied to fabricate an overvoltage protection component.
本發明的陶瓷材料配方組成使用導體材料為核材料1時，可以是下列金屬的一種或兩種以上或者是它們的合金的組合，這些金屬包括Fe、Al、Ni、Cu、Ag、Au、Pt、Pd等。又本發明的陶瓷材料配方組成使用半導體材料為核材料1時，可以是下列半導化材料的一種或兩種以上的組合ZnO、SrTiO3、SiC、TiO2、SnO2、Si、GaAs等。又本發明所述的核材料1也可以是上述所述導體材料與半導化材料的組合物；本發明的陶瓷材料配方組成的殼材料2，可選用矽酸鹽玻璃、硼玻璃、矽鋁玻璃、磷玻璃或是鉛玻璃等玻璃材料。 When the ceramic material formulation composition of the present invention uses the conductor material as the core material 1, it may be one or more of the following metals or a combination of alloys thereof including Fe, Al, Ni, Cu, Ag, Au, Pt. , Pd, etc. Further, when the ceramic material composition of the present invention is a core material 1 using a semiconductor material, it may be one or a combination of two or more of the following semiconductor materials: ZnO, SrTiO3, SiC, TiO2, SnO2, Si, GaAs, or the like. The core material 1 of the present invention may also be a combination of the above-mentioned conductor material and semi-conductive material; the shell material 2 composed of the ceramic material formula of the invention may be selected from bismuth silicate glass, borosilicate glass and bismuth aluminum. Glass materials such as glass, phosphor glass or lead glass.
又本發明的陶瓷材料製造流程如下，首先選擇適當的金屬導體或半導體化的金屬氧化物或是一般的半導體材料為核材料1，含浸具有適當組成的矽玻璃、硼玻璃、鉛玻璃或磷玻璃等玻璃材料配方為殼材料2的溶膠中，利用異質析出的方式使前述導體或是半導體化材料的晶粒表面包覆一層含玻璃配方的材料層，接著將包覆完成的組合物，以500~900℃煅燒0.5~8hr，使包覆在導體或是半導體表面的含玻璃成分的無機或有機材料層轉化為玻璃層。 如此，即製作出具有核殼結構的陶瓷粉體。上述的配方組成，得經由成型的步驟，製成突波吸收器的生胚，這個生胚可以是單層型或是積層型，再將生胚以600~1000℃的溫度燒結0.5~4hr。 The ceramic material manufacturing process of the present invention is as follows. First, an appropriate metal conductor or a semiconductor metal oxide or a general semiconductor material is selected as the core material 1, impregnated with a suitable composition of bismuth glass, borosilicate glass, lead glass or phosphor glass. When the glass material is formulated as a sol of the shell material 2, the surface of the crystal of the conductor or the semiconductor material is coated with a layer of a material containing a glass formulation by heterogeneous precipitation, and then the finished composition is 500. The calcination is carried out at ~900 ° C for 0.5-8 hr to convert the glass-containing inorganic or organic material layer coated on the conductor or the semiconductor surface into a glass layer. Thus, a ceramic powder having a core-shell structure was produced. The above formula consists of forming a green body of a surge absorber through a molding step. The raw embryo may be a single layer type or a laminated type, and the raw embryo is sintered at a temperature of 600 to 1000 ° C for 0.5 to 4 hours.
若是最終產品是一般單層型則按照單層型元件的標準方法來製造單層型突波吸收器。將前述製備完成的煅燒粉體，加入適當的黏結劑、分散劑後，以成型壓力約10000PSI的壓力成型，再經過排膠過程後，以600~1100℃燒0.5~4hr，製成陶瓷熟胚，接著再於熟胚上下兩面塗佈上導電銀漿，經500~800℃還原處理後，製成單層型突波吸收器。 If the final product is a general single layer type, a single layer type surge absorber is manufactured in accordance with the standard method of the single layer type element. The calcined powder prepared as described above is added to a suitable binder and dispersant, and then formed at a molding pressure of about 10,000 PSI, and then subjected to a debinding process, and then fired at 600 to 1100 ° C for 0.5 to 4 hr to prepare a ceramic cooked embryo. Then, the conductive silver paste is coated on the upper and lower sides of the cooked embryo, and is subjected to reduction treatment at 500 to 800 ° C to prepare a single-layer type surge absorber.
又若是最終產品是積層型則按照積層元件的標準方法來製造如第二圖所示的積層型突波吸收器。將前述製備完成的煅燒粉體，加入適當的黏結劑、分散劑、塑性劑及有機溶劑等，調製成含配方粉體的漿料，再以刮刀成型的方法，製作生胚薄帶。同時控制漿料的黏度、刮刀厚度等參數來調整製程中的生胚厚度，製作出厚度15~200um的生胚薄帶。接著將生胚薄帶切出預定尺寸，在其上印上如鉑、銀、鈀、金、銠及以上任兩種貴金屬所組成的合金當作內電極3，然後將印刷內電極3完成的生胚，以內電極端部交錯出現的方式堆疊在一起，於覆蓋上下蓋後，經熱水均壓製程後，按照事先設定的位置進行切割，製作成生胚晶粒。 Further, if the final product is a laminated type, the laminated surge absorber as shown in Fig. 2 is produced in accordance with the standard method of the laminated element. The calcined powder prepared as described above is added to a suitable binder, a dispersant, a plasticizer, an organic solvent, etc. to prepare a slurry containing the formula powder, and then a raw metal strip is prepared by a doctor blade method. At the same time, the parameters such as the viscosity of the slurry and the thickness of the blade are controlled to adjust the thickness of the green embryo in the process, and a green embryo strip having a thickness of 15 to 200 um is produced. Next, the raw embryo strip is cut out to a predetermined size, and an alloy composed of platinum, silver, palladium, gold, rhodium, and any two noble metals is printed thereon as the internal electrode 3, and then the inner electrode 3 is printed. The raw embryos are stacked in such a manner that the ends of the inner electrodes are staggered, and after covering the upper and lower covers, after the hot water is pressed, the cutting is performed according to the preset position to prepare the green embryo grains.
接下來，將上述生胚晶粒置於燒結爐中進行燒結，以燒結條件為600~1100℃燒0.5~4hr後，製成如第二圖所示的於微結構上具有核殼結構的陶瓷晶粒4；其中，該陶瓷晶粒4的核結構6是由半導體或是導體所組成，而該陶瓷晶粒4的殼結構7則由具有絕緣體特性的玻璃層所組成。然後再對該陶瓷晶粒4具有內電極3外露的兩端上，披覆上銀漿(Ag)形成外端電極5，再將上述組合物以500~900℃還原，如此即製作完成如第二圖所示的積層型晶片突波吸收器。 Next, the raw embryo grains are placed in a sintering furnace for sintering, and after sintering at 600 to 1100 ° C for 0.5 to 4 hr, a ceramic having a core-shell structure on the microstructure as shown in the second figure is formed. The crystal grain 4 is composed of a semiconductor or a conductor, and the shell structure 7 of the ceramic crystal grain 4 is composed of a glass layer having an insulator property. Then, the ceramic crystal grain 4 has the exposed ends of the internal electrode 3, and is coated with silver paste (Ag) to form the outer end electrode 5, and then the above composition is reduced at 500 to 900 ° C, so that the preparation is completed. The laminated wafer surge absorber shown in Fig. 2.
接著測量上述完成的突波吸收器元件的電氣特性，包括元件的基本電性，如崩潰電壓V1mA，非線性指數α、漏電流iL，ESD耐量、抑制電壓等電器特性。其中元件的ESD耐量是指元件承受 靜電後，V1mA位移量在±10%以內的最大突波電流值。 Next, the electrical characteristics of the completed surge absorber element are measured, including the basic electrical properties of the component, such as breakdown voltage V 1mA , nonlinear exponent α, leakage current i L , ESD tolerance, suppression voltage, and the like. The ESD tolerance of the component is the maximum surge current value of the V 1mA displacement within ±10% after the component is subjected to static electricity.
選擇粒度大小為0.6~1.0um的碳化矽粉，將其浸泡在以矽酸乙脂為主體的透明有機溶液中，利用控制溶液PH的方式，使含玻璃成分的化合物，均勻析出在碳化矽粉體的表面上，接著將粉體取出烘乾後，以600℃的溫度，煅燒2hr，製作成包覆矽酸鹽玻璃的碳化矽粉體。 The niobium carbide powder having a particle size of 0.6 to 1.0 um is selected and immersed in a transparent organic solution mainly composed of ethyl citrate, and the glass-containing compound is uniformly precipitated in the niobium carbide powder by controlling the pH of the solution. On the surface of the body, the powder was taken out and dried, and then calcined at a temperature of 600 ° C for 2 hr to prepare a niobium silicate powder-coated niobium carbide powder.
將前述煅燒後的粉末加入適當的分散劑、塑性劑、黏劑及有機溶劑，將其調製成有機漿料，同時控制漿料的黏度在一定範圍，以利後續薄帶成型的厚度控制。利用括刀成型技術，控制刮刀厚度及漿料黏度，製造出厚度15~200um的生胚薄帶。接著將6層印有內電極的生胚薄帶按照內電極交錯的方式堆疊，又為了降低產品的漏電流及增加產品的穩定性，於上述組合物的上下各加上5層未印內電極的薄帶，然後，將整組組合物，於70℃ 3000PSI的壓力壓合在一起。接著，按照預定位置切割，製成生胚晶粒。 The calcined powder is added to a suitable dispersing agent, a plasticizer, an adhesive, and an organic solvent to prepare an organic slurry, and the viscosity of the slurry is controlled to a certain extent to facilitate thickness control of the subsequent ribbon forming. The blade forming technology is used to control the thickness of the blade and the viscosity of the slurry to produce a green embryo strip having a thickness of 15 to 200 um. Then, 6 layers of green thin strips printed with internal electrodes are stacked in a staggered manner, and in order to reduce the leakage current of the product and increase the stability of the product, 5 layers of unprinted internal electrodes are added on the upper and lower sides of the above composition. The strip was then pressed together at a pressure of 3000 PSI at 70 °C. Next, the raw embryo grains are formed by cutting at a predetermined position.
再將前述生胚晶粒以900℃燒結2hr，接著將燒結後的陶瓷晶粒的內電極外露端披覆上銀漿，再於800℃處理0.5hr。如此即可產出尺寸大小為1.0*0.5*0.5的積層型突波吸收器。 The green embryo grains were sintered at 900 ° C for 2 hr, and then the exposed ends of the sintered ceramic crystal grains were coated with silver paste, and then treated at 800 ° C for 0.5 hr. Thus, a laminated surge absorber having a size of 1.0*0.5*0.5 can be produced.
然後，測量積層型突波吸收器元件的各項基本電性，包括崩潰電壓V1mA，非線性指數α、漏電流iL，ESD吸收能量、抑制電壓等電器特性，以評估元件的實用性。結果如表一及表二所示。其中表一為添加不同量玻璃對元件特性的影響。由樣品1~5的結果顯示元件具有突波吸收器的特性。此外，當玻璃添加量增加時，元件具有較高的崩潰電壓值及非線性指數值增加，而元件的漏電流值降低，又當玻璃添加量大於20%，元件的漏電流降到較低的數值且可通過8KV靜電測試。表二顯示不同生胚厚度，900℃燒結的電性，結果顯示元件的崩潰電壓值和生胚薄帶成正比關係，薄帶厚度愈厚則元件的崩潰電壓值愈高。 Then, the basic electrical properties of the laminated surge absorber element, including the breakdown voltage V 1mA , the nonlinearity index α, the leakage current i L , the ESD absorption energy, the suppression voltage, and the like, are measured to evaluate the practicality of the component. The results are shown in Tables 1 and 2. Table 1 shows the effect of adding different amounts of glass on the characteristics of the components. The results from samples 1 to 5 show that the element has the characteristics of a surge absorber. In addition, when the amount of glass added increases, the component has a higher breakdown voltage value and the nonlinear index value increases, and the leakage current value of the component decreases, and when the glass addition amount is greater than 20%, the leakage current of the component drops to a lower level. Value and can pass the 8KV static test. Table 2 shows the thickness of different green embryos and the electrical properties of sintering at 900 °C. The results show that the breakdown voltage of the component is proportional to the thin strip of the raw embryo. The thicker the thickness of the ribbon, the higher the breakdown voltage of the component.
由上述表一及表二的結果顯示透過管控玻璃添加量及薄帶成型厚度，我們可以製作出電壓任意可調的積層突波吸收器。 From the results of Tables 1 and 2 above, it is shown that through the addition of the control glass and the thickness of the ribbon, we can produce a laminated surge absorber with an adjustable voltage.
利用如前所述的方法，將構成核的原料改成半導化鈦酸鍶粉末，而殼的原料改成硼玻璃。同樣先進行半導化鈦酸鍶粉體的包覆玻璃層過程，接著進行晶片元件製程，先以刮刀成型製造出厚度50um的生胚，再製成具有2層內電極的生胚晶粒，接著以850℃ 2hr燒結，再製成常見0402積層型突波吸收元件。元件的電氣特性如表三所示，其結果顯示元件具有積層型突波吸收器的性質。 The raw material constituting the core was changed to a semi-conductive barium titanate powder by the method as described above, and the raw material of the shell was changed to borosilicate glass. Similarly, the process of coating the glass layer of the semi-conductive barium titanate powder is carried out first, followed by the wafer component process, and the green embryo having a thickness of 50 μm is first formed by doctor blade, and the green embryo grain having two internal electrodes is prepared. Then, it was sintered at 850 ° C for 2 hr, and then made into a common 0402 laminated type surge absorber. The electrical characteristics of the components are shown in Table 3. The results show that the components have the properties of a laminated surge absorber.
同樣利用如前所述的方法，將構成核的原料改成金屬鎳粉末，而殼的原料改成矽玻璃。同樣先進行金屬鎳粉體的包覆玻璃層過程，接著進行晶片元件製程，先以刮刀成型製造出30um的生胚，製成內電極為2層的生胚晶粒，接著以800℃ 2hr燒結，再製成常見0402積層型突波吸收元件。元件的電氣特性如表四所示，其結果顯示元件具有積層型突波吸收器的性質，而且元件可承受8KV靜電測試。 Similarly, the raw material constituting the core was changed to metallic nickel powder by the method as described above, and the raw material of the shell was changed to bismuth glass. Similarly, the process of coating the glass layer of the metal nickel powder is carried out first, followed by the wafer component process, and a 30 um green embryo is first formed by doctor blade to prepare two layers of green embryo grains, followed by sintering at 800 ° C for 2 hr. , and then made a common 0402 laminated surge absorber. The electrical characteristics of the components are shown in Table 4. The results show that the components have the properties of a laminated surge absorber and the components can withstand an 8KV electrostatic test.
利用如前所述的方法，將構成核的原料改成金屬銅粉末，而殼的原料改成矽玻璃。同樣先進行金屬銅粉體的包覆玻璃層過程，接著進行晶片元件製程，先以刮刀成型製造出50um的生胚，製成內電極為2層的生胚晶粒，接著以700℃ 2hr燒結，再製成常見0402積層型突波吸收器元件。元件的電氣特性如表四所示.，其結果顯示元件具有積層型突波吸收器的性質，而且元件可承受8KV靜電測試。 The raw material constituting the core was changed to metallic copper powder by the method as described above, and the raw material of the shell was changed to bismuth glass. Similarly, the process of coating the glass layer of the metal copper powder is carried out first, followed by the wafer component process, and 50 μm of the green embryo is first formed by doctor blade to prepare two layers of raw embryo grains, followed by sintering at 700 ° C for 2 hr. , and then made a common 0402 laminated type surge absorber element. The electrical characteristics of the components are shown in Table 4. The results show that the components have the properties of a laminated surge absorber and the components can withstand an 8KV electrostatic test.
接著我們研究一下，使用原料粒度對元件電性的影響，同樣利用如前所述的方法，先以不同顆粒大小，0.5~10μm的SiC當作 核材料，接著進行矽玻璃層包覆過程，然後再製作厚度約50μm的生胚薄帶，最後製成尺寸為0402的積層型突波吸收器元件。元件的電氣特性如表五所示，其結果顯示元件的崩潰電壓和核的原始粒度有關，使用粉末粒度較細的原料，元件有較低的崩潰電壓值。 Next, we will study the effect of the particle size on the electrical properties of the device, and also use the method described above to first treat SiC with different particle sizes of 0.5-10 μm. The core material is then subjected to a glass-line coating process, and then a green thin strip having a thickness of about 50 μm is produced, and finally a laminated surge absorber element having a size of 0402 is formed. The electrical characteristics of the components are shown in Table 5. The results show that the breakdown voltage of the component is related to the original particle size of the core. The material with a finer particle size has a lower breakdown voltage value.
綜合上面所述的實施例，我們發現具有核殼結構的積層型突波吸收器元件，具有相當不錯的突波吸收器特性，且元件的電氣特性和核材料的晶粒大小、殼結構的厚度、殼結構的絕緣阻抗、兩平行電極間的間距及電極材料的重疊面積等參數有關。 In summary of the above-described embodiments, we have found that a laminated swell absorber element having a core-shell structure has quite good swell absorber characteristics, and the electrical characteristics of the element and the grain size of the core material and the thickness of the shell structure. The insulation resistance of the shell structure, the spacing between the two parallel electrodes, and the overlapping area of the electrode material are related.
1‧‧‧核材料 1‧‧‧Nuclear material
2‧‧‧殼材料 2‧‧‧Shell material
3‧‧‧內電極 3‧‧‧ internal electrodes
4‧‧‧陶瓷晶粒 4‧‧‧Ceramic grains
5‧‧‧外端電極 5‧‧‧External electrode
6‧‧‧核結構 6‧‧‧ nuclear structure
7‧‧‧殼結構 7‧‧‧Shell structure
第一圖為本發明的陶瓷材料的微結構具核殼結構的示意圖。 The first figure is a schematic view of the microstructure of the ceramic material of the present invention having a core-shell structure.
第二圖為本發明的積層型突波吸收器示意圖及其陶瓷晶粒的微結構具核殼結構的示意圖。 The second figure is a schematic view of a laminated type surge absorber of the present invention and a microstructure of the ceramic crystal grain having a core-shell structure.
3‧‧‧內電極 3‧‧‧ internal electrodes
4‧‧‧陶瓷晶粒 4‧‧‧Ceramic grains
5‧‧‧外端電極 5‧‧‧External electrode
6‧‧‧核結構 6‧‧‧ nuclear structure
7‧‧‧殼結構 7‧‧‧Shell structure
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| US3846345A (en) * | 1969-10-06 | 1974-11-05 | Owens Illinois Inc | Electroconductive paste composition and structures formed therefrom |
| EP0115050A1 (en) * | 1982-12-24 | 1984-08-08 | Kabushiki Kaisha Toshiba | Varistor |
| TW500707B (en) * | 2001-06-05 | 2002-09-01 | Jen-Jia Jou | Electrode material and manufacture method of ceramic co-fired component |
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| Publication number | Publication date |
|---|---|
| TW200820532A (en) | 2008-05-01 |
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