CN103971866B - Rheostat with filtration structure - Google Patents
Rheostat with filtration structure Download PDFInfo
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- CN103971866B CN103971866B CN201410213764.9A CN201410213764A CN103971866B CN 103971866 B CN103971866 B CN 103971866B CN 201410213764 A CN201410213764 A CN 201410213764A CN 103971866 B CN103971866 B CN 103971866B
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- Prior art keywords
- rheostat
- resistive layer
- oxide
- resistance
- filter structure
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Links
- 238000001914 filtration Methods 0.000 title abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000011787 zinc oxide Substances 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 22
- 239000002245 particle Substances 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 13
- 238000005245 sintering Methods 0.000 claims abstract description 11
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 92
- 239000011229 interlayer Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 7
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 7
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 6
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000005368 silicate glass Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- 239000005365 phosphate glass Substances 0.000 claims description 4
- 239000005385 borate glass Substances 0.000 claims description 3
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 3
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052810 boron oxide Inorganic materials 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 13
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 11
- 229910052763 palladium Inorganic materials 0.000 description 6
- 210000001161 mammalian embryo Anatomy 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000010422 painting Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000003837 high-temperature calcination Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 3
- 229910001948 sodium oxide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 210000002257 embryonic structure Anatomy 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a rheostat with a filtration structure; by using resistive paste with a specific formula, a zinc oxide varistor and a resistance layer are co-fired in a sintering process; the resistance layer is sintered in a rheostat main body, so that the rheostat is low in manufacturing cost; the components of the resistive paste consist of 60wt%-70wt% of glass powder and 30wt%-40wt% of conductive particle; the conductive particle consists of 97wt%-99wt% of ruthenium dioxide (RuO2) and 1wt%-3wt% of silver palladium (Ag/Pd) alloy.
Description
Technical field
The present invention relates to a kind of rheostat, particularly one kind have preventing electro-static discharge (ESD) and protection Electromagnetic Interference concurrently
(EMI) bifunctional rheostat.
Background technology
Surge absorber (or claiming rheostat) is the overvoltage or surging protection of electronic building brick, electronic circuit or electronic equipment
Component.As science and technology is showing improvement or progress day by day, the operating frequency of electronic product is more and more high, and size is more and more little, the interference of electromagnetic noise
Problem is also more complicated.Therefore, give rheostat and have difunctional (hereafter general term has the rheostat of filter structure) concurrently, except tool originally
Outside preventing electro-static discharge function, also have filter function concurrently to protect Electromagnetic Interference, be recent fashion trend.
The rheostat of tool filter structure, is possess capacitive function using rheostatic main body, and rheostatic main body is combined
After resistive layer, that is, the RC wave filters for taking into account protection Electromagnetic Interference function are collectively formed, can be with effectively solving electronic product electromagnetism
The problem of interference.
The rheostatic main body, is, with zinc oxide as main component, and to add bismuth (Bi), antimony in the fabrication process
(Sb), the oxide such as silicon (Si), cobalt (Co), manganese (Mn), chromium (Cr), makes after 900~1100 DEG C of high-temperature calcinations of sintered temperature;
And the resistive layer is to use general resistance paste after screen painting, then 700~900 DEG C of calcining heat treatments of temperature are bestowed, made
Resistance paste solidifies and becomes the resistive layer combined with rheostatic main body.
In the fabrication process, (900~1100 DEG C) heat treatment temperatures higher than resistive layer of the sintering temperature of rheostat main body
(700~900 DEG C), both are not heat-treated within the scope of same temperature, therefore the rheostat main body of tool filter structure and electricity
Resistance layer can not carry out common burning, constructively, the inside for causing the resistive layer to be sintered in the rheostat main body need
Until rheostat main body calcining make after, then screen painting resistive layer and resistive layer is bestowed secondary heat treatment processing.More specifically
For, this result will cause the resistive layer to be sintered in the rheostatic body exterior surface, or, using different
Preparation method, the rheostatic main body and the resistive layer are individually separated making stand-alone assembly, reuse surface mount (SMT) skill
Art is combined into one two components.
Rheostat 10 shown in Fig. 1 and Fig. 2, by resistive layer the outer surface of rheostat main body is sintered in, and is the first tool
The rheostat prior art of filter structure, its construction include a rheostat main body 11, a resistive layer 16, an insulating protective layer 17,
More than one group of external electrode 18a and 18b and two ground connection external electrode 19a and 19b.Wherein, the rheostat main body 11 is by one
First substrate 12, a ground electrode layer 13, an inner electrode layer 14 and a second substrate 15 sequentially coincide and sinter and form;The change
The inner electrode layer 14 of resistance device main body 11, with zinc oxide as main component, be provided with more than one group with respect to and separate interior electrode 14a and
14b, and be connected respectively with corresponding external electrode 18a and 18b, with character of changing of resistence.
The resistive layer 16 corresponds to the interior electrode 14a and 14b positions and is formed at the overhead surface of the second substrate 15,
Reuse the insulating protective layer 17 to be covered in above the resistive layer 16, to protect the resistive layer 16, and the resistive layer
16 two ends are connected respectively with corresponding external electrode 18a and 18b, and then connect respectively with corresponding interior electrode 14a and 14b
Connect so that the resistive layer 16 constitutes one group of RC wave filter with the inner electrode layer 14;The ground electrode layer 13 is with zinc oxide
For main component, and it is provided with electrode 13a and 13b in ground connection and is connected respectively with corresponding ground connection external electrode 19a and 19b, with structure
Into the earthed circuit for being parallel to RC wave filters, and the tool filter function of the rheostat 10 is caused to protect Electromagnetic Interference.
Rheostat 20 shown in Fig. 3, by rheostat and resistive layer stand-alone assembly is separately formed, and is second tool filter structure
Rheostat prior art, its construction at least include a variable resistance device assembly 21, a resistance substrate 22 and two external electrodes 25, its
In, the variable resistance device assembly 21 has character of changing of resistence, and the resistance substrate 22 is provided with more than one resistive layer 23 above and two connect
Ground electrode 24, is combined into one the variable resistance device assembly 21 and the resistance substrate 22 with surface mount (SMT) technology, then is made
The interior electrode (figure is not painted) of the variable resistance device assembly 21 and the resistive layer 23 of the resistance substrate 22 are connected in parallel with external electrode 25,
To constitute one group of RC wave filter, meanwhile, the earth electrode 24 of the resistance substrate 22 is parallel to RC filters through being electrically connected with composition
The earthed circuit of ripple device so that the rheostat 20 has filter function to protect Electromagnetic Interference.
Rheostat 10 and 20 disclosed in above-mentioned prior art, have preventing electro-static discharge (ESD) concurrently and protection electromagnetic wave is done
Disturb that (EMI) is difunctional, but its shortcoming is rheostat main body and resistive layer can not carry out common burning, and resistive layer can not be sintered in described
The inside of rheostat main body, therefore cost of manufacture is relatively higher.
The content of the invention
In view of this, present invention is primarily targeted at a kind of resistance paste of tool special formulation of exploitation, makes except being applied to
Into outside rheostatic resistive layer, its characteristic also includes the temperature that resistance paste burns till resistive layer being adjusted to close rheostat main body
900~1100 DEG C of high-temperature calcination temperature, in sintering process, rheostat main body and resistive layer can carry out common burning, and by resistance
Layer is sintered in the inside of the rheostat main body.
The component prescription of the resistance paste, including the glass powder and the conducting particles of 50~10wt% of 50~90wt%,
Wherein, the glass powder is with silica (SiO2) it is main component, may be selected from silicate glass, sillico aluminate glass, boron
Silicate glass, phosphate glass or plumbite glass, and depending on being actually needed, can separately add aluminum oxide (Al2O3), zinc oxide
(ZnO), calcium oxide (CaO), barium monoxide (BaO), bismuth oxide (Bi2O3), magnesia (MgO), titanium oxide (TiO2), niobium oxide
(Nb2O5), boron oxide (B2O3), potassium oxide (K2) or sodium oxide molybdena (Na O2O one or more oxides);The conducting particles
By the ruthenic oxide (RuO of 97~99wt%2) and 3~1wt% silver-colored palladium (Ag/Pd) alloy composition.
Another main purpose of the present invention is a kind of rheostat of tool filter structure of exploitation, has preventing electro-static discharge and prevents
Shield Electromagnetic Interference is difunctional, is structurally characterized in that rheostatic inside is provided with resistive layer, and the rheostatic concrete structure includes one
Zinc oxide varistor, is provided with more than one group external electrode and one group of ground connection external electrode outside it, and the zinc oxide varistor is one
Body structure, is internally provided with:
One inner electrode layer, be provided with more than one group with respect to and separate interior electrode, and be connected respectively with corresponding external electrode;
One resistance interlayer, is provided with more than one resistive layer, and the two ends of each resistive layer connect respectively with corresponding external electrode
Connect, and the composition of each resistive layer, include following component:
A) glass powder of 50~90wt%, selected from silicate glass, sillico aluminate glass, borate glass, phosphate
Glass or plumbite glass;And
B) conducting particles of 50~10wt%, by the ruthenic oxide (RuO of 97~99wt%2) and 3~1wt% silver-colored palladium
(Ag/Pd) alloy composition;And
One ground electrode layer, is provided with two earth electrodes, is connected respectively with corresponding ground connection external electrode.
As the presently preferred embodiments, the composition of the resistive layer of the resistance interlayer, by the glass powder and 40 of 60~70wt%
The conducting particles of~30wt% replaces.
As the presently preferred embodiments, the glass powder in the resistive layer composition of the resistance interlayer, can separately add selected from oxidation
Aluminium (Al2O3), zinc oxide (ZnO), calcium oxide (CaO), barium monoxide (BaO), bismuth oxide (Bi2O3), magnesia (MgO), titanium oxide
(TiO2), niobium oxide (Nb2O5), boron oxide (B2O3), potassium oxide (K2) or sodium oxide molybdena (Na O2O one or more oxidations)
Thing.
As the presently preferred embodiments, the rheostatic resistive layer of the tool filter structure, its resistance value is between 10 Ω~80k
Ω。
As the presently preferred embodiments, the rheostatic resistive layer of the tool filter structure, its resistance value is between 50 Ω~1200
Ω。
As the presently preferred embodiments, the rheostatic resistive layer of the tool filter structure, its resistance value is between 50 Ω~200
Ω。
The rheostat of the tool filter structure of the present invention, has the advantages that:
1. in terms of the sintering process of zinc oxide varistor, zinc oxide varistor can carry out common burning with resistive layer, manufacture
Cost is relatively cheap;
2. in configuration aspects, resistive layer is sintered in into the inside of rheostat main body, it is possible to reduce solder joint and increase rheostat
The reliability of product, can especially reduce the volume of rheostat product, meet light, thin, short, little trend and requirement.
Description of the drawings
Fig. 1 is the rheostat prior-art illustration of the first tool filter structure.
Fig. 2 is the rheostat exploded view of the tool filter structure of Fig. 1.
Fig. 3 is the rheostat prior-art illustration of second tool filter structure.
Fig. 4 is the rheostat schematic diagram of the tool filter structure of the present invention.
Fig. 5 is the rheostat exploded view of the tool filter structure of Fig. 4.
Reference
The rheostat of 10 ... tool filter structures
11 ... rheostat main bodys
12 ... first substrates
13 ... ground electrode layers
Electrode in 13a, 13b ... ground connection
14 ... inner electrode layers
The interior electrode of 14a, 14b ...
15 ... second substrates
16 ... resistive layers
17 ... insulating protective layers
18a, 18b ... external electrode
19a, 19b ... are grounded external electrode
The rheostat of 20 ... tool filter structures
21 ... variable resistance device assemblies
22 ... resistance substrates
23 ... resistive layers
24 ... earth electrodes
25 ... external electrodes
The rheostat of 30 ... tool filter structures
31 ... zinc oxide varistors
32a ... lower floors varistor
32b ... middle levels varistor
32c ... upper stratas varistor
33 ... resistance interlayers
34 ... resistive layers
35 ... ground electrode layers
35a, 35b ... earth electrode
36 ... inner electrode layers
The interior electrode of 36a, 36b ...
38a, 38b ... external electrode
39a, 39b ... are grounded external electrode
Specific embodiment
As shown in Figures 4 and 5, the rheostat 30 of tool filter structure of the invention, be with the scraper processing procedure of mature and
Strip is molded (tape casting) and slurry is made into a sheet by a sheet thin raw embryo, then the thin raw embryo of storehouse number makes the life of predetermined thickness
Embryo strip, through screen printing technology, distinguishes printed resistor layer 34, earth electrode 35a and 35b or interior on different thin raw embryos
Electrode 36a and 36b, sequentially overlap different raw embryo strips and screen painting Different electrodes, then through pressing, cutting and sinter raw embryo
After the processing procedures such as crystal grain, the crystal grain processing completed to sintering is draped over one's shoulders in the resistive layer 34 of crystal grain and the exposed junction of interior electrode 36a and 36b
Be covered with external electrode 38a and 38b, to a crystal grain earth electrode 35a and 35b exposed junction coating on be grounded external electrode 39a and
After 39b, then through reductive heat treatment, that is, the rheostat 30 of the tool filter structure is obtained.
The characteristics of rheostat 30 of the tool filter structure of the present invention, including:Resistive layer is sintered in rheostat main body
Portion;In sintering process, rheostat main body can carry out common burning with resistive layer, and obtained rheostat has protection electrostatic concurrently and puts
Electric (ESD) and protection Electromagnetic Interference (EMI) are difunctional.
The rheostat 30 of the tool filter structure, its concrete structure includes more than 31, one group dispatch from foreign news agency of a zinc oxide varistor
Pole 38a and 38b and one group of ground connection external electrode 39a and 39b.
As shown in figure 5, the zinc oxide varistor 31 is integrated, its inside connects comprising a resistance interlayer 33,
The inner electrode layer 36 of ground electrode layer 35 and.The microstructure of the zinc oxide varistor 31, by zinc oxide grain and intercrystalline
Grain boundary layer is constituted, including the Method of ZnO raw material and the auxiliary material of the most 2.5~10mol% of total addition level of 90~97.5mol%,
Wherein, one of which of the auxiliary material selected from bismuth (Bi), antimony (Sb), silicon (Si), cobalt (Co), manganese (Mn) or chromium (Cr) oxide
Or more than one mixing.
For convenience of description, with the resistance interlayer 33 inside the zinc oxide varistor 31, ground electrode layer 35 and interior electrode
Layer 36 is boundary, the zinc oxide varistor 31 of integral structure is distinguished into into three parts coincides and form, including lower floor's varistor
32a, a middle level varistor 32b and a upper strata varistor 32c.
The zinc oxide varistor 31 of the present invention, according to the difference of resistance interlayer 33, ground electrode layer 35 and inner electrode layer 36
Position arrangement, and there are different embodiments.The resistance interlayer 33 is arranged on the position inside zinc oxide varistor 31, may be selected
Arrange between the middle level varistor 32b and the upper strata varistor 32c, or be alternatively provided at the middle level varistor 32b and
Between lower floor's varistor 32a.
The one of which specific embodiment of the zinc oxide varistor 31, as shown in figure 5, resistance interlayer 33 is between lower floor
Between varistor 32a and middle level varistor 32b, and ground electrode layer 35 and inner electrode layer 36 then between middle level varistor 32b and on
Between layer varistor 32c;Another kind of specific embodiment is to exchange the position of resistance interlayer 33 and ground electrode layer 35 or exchange
The position of resistance interlayer 33 and inner electrode layer 36.
The resistance interlayer 33 is provided with more than one resistive layer 34, is formed by the resistance paste sintering of tool special formulation;It is described
The physical property of resistance paste, close with the physical property of the zinc oxide varistor 31, the sintering temperature of the resistance paste is between 900~1100
DEG C, it is to reach rheostat main body 31 and resistance in sintering process Jie Jin the high-temperature calcination temperature of the zinc oxide varistor 31
Layer 34 can carry out the guardian technique of common burning, be also that resistive layer 34 is sintered in the key skill inside rheostat main body 31
Art.
The special component of the resistance paste (or resistive layer 34), including the glass powder and 50~10wt% of 50~90wt%
Conducting particles, preferably comprise the glass powder of 60~70wt% and the conducting particles of 40~30wt%.Wherein, the conduction
Particle by 97~99wt% ruthenic oxide (RuO2) and 3~1wt% silver-colored palladium (Ag/Pd) alloy composition;The glass powder
With silica (SiO2) it is main component, may be selected from silicate glass, sillico aluminate glass, borate glass, phosphate glass
Glass or plumbite glass, and depending on being actually needed, can separately add aluminum oxide (Al2O3), zinc oxide (ZnO), calcium oxide (CaO), oxidation
Barium (BaO), bismuth oxide (Bi2O3), magnesia (MgO), titanium oxide (TiO2), niobium oxide (Nb2O5), boron oxide (B2O3), oxidation
Potassium (K2) or sodium oxide molybdena (Na O2O one or more oxides).
The resistance value of the resistive layer 34, preferably between 50 Ω~1200 Ω, is most preferably situated between 10 Ω~80k Ω
In 50 Ω~200 Ω.The resistance value of the resistive layer 34, can fit according to the screen painting width of resistive layer 34, length, thickness
Degree adjustment, the printed pattern width of resistive layer 34 is wider, and resistance value is lower, and printed pattern length is longer, and resistance value is higher, printing
Thickness profile is thicker, and resistance value is lower.
The inner electrode layer 36 is arranged on the inside of the zinc oxide varistor 31, that is, arranges the middle level varistor
Between 32b and the upper strata varistor 32c, or it is arranged between the middle level varistor 32b and lower floor's varistor 32a.
The inner electrode layer 36 be provided with more than one group with respect to and separate interior electrode 36a and 36b, and with corresponding dispatch from foreign news agency
38a and 38b connect respectively for pole, with character of changing of resistence.
The two ends of the resistive layer 34 of the resistance interlayer 33, are also connected respectively with corresponding external electrode 38a and 38b, enter
And constitute with the interior electrode 36a and 36b of the inner electrode layer 36 and be connected in parallel, and constitute one group of RC wave filter.
The ground electrode layer 35 is arranged on the inside of the zinc oxide varistor 31, that is, arranges the middle level variable resistance
Between body 32b and the upper strata varistor 32c, or it is arranged between the middle level varistor 32b and lower floor's varistor 32a,
And the ground electrode layer 35 is provided with electrode 35a and 35b in two ground connection, distinguishes with corresponding ground connection external electrode 39a and 39b
After connection, then the earthed circuit for being parallel to the RC wave filters is constituted so that the rheostat 30 of the tool filter structure of the present invention is simultaneous
Tool filter function.
Electrode 35a and 35b, interior electrode 36a and 36b, external electrode 38a and 38b or ground connection external electrode 39a in the ground connection
And the electrode material of 39b, can select the materials such as silver (Ag), copper (Cu) or silver palladium alloy.
Embodiment 1-9
In the special component and ratio of table 1, allocate standby for the resistance paste of embodiment 1-9 respectively, wherein glass powder
From with silica (SiO2) for main component silicate glass;The conductive particle of embodiment 1 is selected by the two of 99wt%
Ruthenium-oxide (RuO2) and 1wt% silver-colored palladium (Ag/Pd) alloy composition;The conductive particle of embodiment 2-8 is selected by the two of 98wt%
Ruthenium-oxide (RuO2) and 2wt% silver-colored palladium (Ag/Pd) alloy composition;The conductive particle of embodiment 9 is from the dioxy by 97wt%
Change ruthenium (RuO2) and 3wt% silver-colored palladium (Ag/Pd) alloy composition.
The identical component zinc oxide slurry for embodiment 1-9 is allocated, using the resistance of embodiment 1-9 during common burning
Cream, is respectively prepared the rheostat 30 of the tool filter structure of embodiment 1-9, and its structure is as shown in Figures 4 and 5.
The rheostat 30 of the tool filter structure of embodiment 1-9, has preventing electro-static discharge (ESD) and protection Electromagnetic Interference concurrently
(EMI) difunctional, processing procedure feature is that rheostat main body 31 carries out common burning with resistive layer 34 in sintering process, is structurally characterized in that electricity
Resistance layer 34 is sintered in the inside of rheostat main body 31, and then as shown in table 1, resistance value is between 10 Ω~80k Ω for electrical characteristic.
Table 1
Claims (6)
1. it is a kind of tool filter structure rheostat, its have preventing electro-static discharge and protection Electromagnetic Interference it is difunctional, the change
Resistance device includes a zinc oxide varistor, more than one group external electrode and one group of ground connection external electrode is provided with outside it, it is characterised in that institute
State zinc oxide varistor to be integrated, be internally provided with:
One inner electrode layer, be provided with more than one group with respect to and separate interior electrode, and be connected respectively with corresponding external electrode;
One resistance interlayer, is provided with more than one resistive layer, and the two ends of each resistive layer are connected respectively with corresponding external electrode, and
The composition of each resistive layer, is formed by the sintering of the resistance paste with following special component:
A) glass powder of 50~90wt%, selected from silicate glass, sillico aluminate glass, borate glass, phosphate glass
Or plumbite glass;And
B) conducting particles of 50~10wt%, is made up of the ruthenic oxide of 97~99wt% and the silver palladium alloy of 3~1wt%;And
One ground electrode layer, is provided with two earth electrodes, is connected respectively with corresponding ground connection external electrode.
2. it is according to claim 1 tool filter structure rheostat, it is characterised in that the resistive layer of the resistance interlayer
Composition, is replaced by the glass powder of 60~70wt% and the conducting particles of 40~30wt%.
3. it is according to claim 1 and 2 tool filter structure rheostat, it is characterised in that the glass powder separately adds
Selected from aluminum oxide, zinc oxide, calcium oxide, barium monoxide, bismuth oxide, magnesia, titanium oxide, niobium oxide, boron oxide, potassium oxide or oxygen
Change one or more oxides of sodium.
4. the rheostat of tool filter structure according to claim 3, wherein, the resistance value of the resistive layer between 10 Ω~
80kΩ。
5. the rheostat of tool filter structure according to claim 3, wherein, the resistance value of the resistive layer between 50 Ω~
1200Ω。
6. the rheostat of tool filter structure according to claim 3, wherein, the resistance value of the resistive layer between 50 Ω~
200Ω。
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US4959262A (en) * | 1988-08-31 | 1990-09-25 | General Electric Company | Zinc oxide varistor structure |
HK1021066A1 (en) * | 1996-06-03 | 2000-05-26 | Matsushita Electric Ind Co Ltd | Method for manufacturing varistor |
TW200820532A (en) * | 2006-10-20 | 2008-05-01 | Bee Fund Biotechnology Inc | The composition of varistors |
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JP3528037B2 (en) * | 1998-12-24 | 2004-05-17 | 株式会社村田製作所 | Manufacturing method of glass ceramic substrate |
JP2003229302A (en) * | 2002-02-01 | 2003-08-15 | Toshiba Corp | Voltage nonlinear resistor |
JP4571164B2 (en) * | 2007-03-28 | 2010-10-27 | 立昌先進科技股▲分▼有限公司 | Ceramic materials used for protection against electrical overstress and low capacitance multilayer chip varistors using the same |
US8263432B2 (en) * | 2007-05-17 | 2012-09-11 | Bee Fund Biotechnology Inc. | Material composition having core-shell microstructure used for varistor |
EP1993109B1 (en) * | 2007-05-18 | 2014-06-04 | SFI Electronics Technology Inc. | Surge absorbing material with a further electrical function |
CN101630553B (en) * | 2009-07-17 | 2011-10-12 | 立昌先进科技股份有限公司 | Preparation method of zinc oxide varister |
CN102024541A (en) * | 2010-12-09 | 2011-04-20 | 深圳顺络电子股份有限公司 | Multilayer chip varistor and manufacturing method thereof |
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US4959262A (en) * | 1988-08-31 | 1990-09-25 | General Electric Company | Zinc oxide varistor structure |
HK1021066A1 (en) * | 1996-06-03 | 2000-05-26 | Matsushita Electric Ind Co Ltd | Method for manufacturing varistor |
CN1133180C (en) * | 1996-06-03 | 2003-12-31 | 松下电器产业株式会社 | Method for manufacturing varistor |
TW200820532A (en) * | 2006-10-20 | 2008-05-01 | Bee Fund Biotechnology Inc | The composition of varistors |
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