CN110634637B - Thick film resistor paste with resistance value range of 1M omega/□ -10M omega/□ and preparation method thereof - Google Patents

Thick film resistor paste with resistance value range of 1M omega/□ -10M omega/□ and preparation method thereof Download PDF

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Publication number
CN110634637B
CN110634637B CN201910830324.0A CN201910830324A CN110634637B CN 110634637 B CN110634637 B CN 110634637B CN 201910830324 A CN201910830324 A CN 201910830324A CN 110634637 B CN110634637 B CN 110634637B
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glass composition
weight
percentage
phase component
film resistor
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CN110634637A (en
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邱基华
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Chaozhou Three Circle Group Co Ltd
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Chaozhou Three Circle Group Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

The invention discloses a thick film resistor paste with a resistance range of 1M omega/□ -10M omega/□ based on divisional application of' CN 201700099898988, the invention discloses the thick film resistor paste, the electrical property of the obtained resistor paste is not deteriorated after the thick film resistor paste with the resistance range of 1M omega/□ and the thick film resistor paste with the resistance range of 10M omega/□ are mixed in any proportion, the good mixing property is realized, any resistance between two adjacent resistance levels can be obtained by adjusting the mixing proportion of the adjacent resistance levels, an intermediate resistance level is not required to be prepared, and the production and manufacturing cost is reduced. The invention also discloses a preparation method of the thick film resistor paste with the resistance range of 1M omega/□ -10M omega/□.

Description

Thick film resistor paste with resistance value range of 1M omega/□ -10M omega/□ and preparation method thereof
Technical Field
The invention relates to a resistor paste based on a divisional application of 'CN 2017000998988 thick film resistor paste', in particular to a thick film resistor paste with the resistance range of 1M omega/□ -10M omega/□ and a preparation method thereof.
Background
The thick film resistor paste is used as a raw material for producing the chip resistor, and the paste is required to have a wider resistance range and can meet the requirement of producing the chip resistor with the resistance of 0.1 omega-10M omega. The existing resistance paste is divided according to resistance values, each 1 order of magnitude is one grade, and the target resistance value is obtained by mixing adjacent resistance value grades with different proportions.
The problems existing in the production process of the conventional thick-film resistor paste are as follows:
1) after some resistance levels are mixed, the electrical performance (EDS, size effect) is deteriorated, and in order to meet the performance requirement of the sheet resistor, the requirements on the process conditions of the subsequent processing after mixing are more strict, for example, at 820-880 ℃, the TCR (temperature coefficient of resistance) of the adjacent resistance levels can be kept at +/-100 ppm, and after mixing, the TCR exceeds 100ppm and even reaches 400ppm under the same conditions;
2) some adjacent resistance steps do not yield a good resistance curve when mixed directly, so there are often intermediate resistance steps, which results in increased costs.
The reasons for the above problems are: because the resistance values of adjacent resistance steps have magnitude difference, the following method is generally adopted when the resistance value is increased by one magnitude order: 1. the content of the powder with high conductivity in the system is reduced; 2. using a conductive phase of lower conductivity or reducing the ratio of conductive phases; 3. the content of the total conductive phase in the system is reduced, and the glass content is improved; 4. the content of glass capable of improving the resistance value in the components is increased; to ensure the electrical performance, the ratio of the conductive phase to the glass phase, the composition of the glass phase should be within a certain range, and the difference between the conductive phase and the glass phase between two adjacent phases is large, so the electrical performance will be deteriorated when mixed.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide thick film resistor paste with good mixing performance.
In order to achieve the purpose, the invention adopts the technical scheme that: a thick film resistive paste comprising a glass composition;
the glass composition comprises at least two of glass composition a, glass composition B, glass composition C, and glass composition D;
the glass composition A comprises the following components in percentage by weight: 10-50% of PbO and SiO2 35～55％、CaO 5～30％、Al2O3 1～20％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、CaO、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition A is at least 95%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40～75％、BaO 0～15％、SrO 0～20％、Na2O 0～10％、K2O 0～10％、Al2O3 1～15％、B2O31-25% and ZnO 0-10%, the SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3And the sum of the weight percentages of ZnO in the glass composition B is at least 95%;
the glass composition C comprises the following components in percentage by weight: 50-88% of PbO and SiO210～30％、Al2O31～10％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition C is at least 95%;
the glass composition D comprises the following components in percentage by weight: 60-88% of PbO and SiO2 10～35％、Al2O3 1～10％、B2O31-10% and 0-20% of transition metal oxide, wherein the transition metal oxide comprises CuO and MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of (1).
In general, the glass composition A cannot obtain good performance when used alone, and at least one of the glass composition B and the glass composition C needs to be matched to obtain good electrical performance and a wider process use window. The addition of glass composition D controls the TCR of the system of thick film resistor paste.
Preferably, in glass composition D, the transition metal oxide is present in an amount of 0 to 15 weight percent, too much resulting in unstable glass formation, easy devitrification and reduced resistance durability.
The invention also provides thick film resistor paste with the resistance range of 0.1 omega/□ -1 omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 0.1 omega/□ and the thick film resistor paste with the resistance of 1 omega/□;
the thick film resistor paste with the resistance value of 0.1 omega/□ and the thick film resistor paste with the resistance value of 1 omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the solid-phase component of the resistance slurry with the resistance value of 0.1 omega/□ comprises at least one of a solid-phase component a and a solid-phase component b;
the solid phase component a comprises the following components in percentage by weight: 20-60% of Ag, 5-65% of Pd and RuO20-20% and 5-30% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 5-20%, the weight percentage of the glass composition B is 20-50%, the weight percentage of the glass composition C is 30-70%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component b comprises the following components in percentage by weight: 20-60% of Ag, 5-65% of Pd and RuO20-20%, 5-30% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 5-20%, the weight percentage of the glass composition B is 20-50%, and the weight percentage of the glass composition C is 30-70%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component b, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the thick film resistor paste with the resistance value of 1 omega/□ comprises at least one of a solid phase component c and a solid phase component d;
the solid phase component c comprises the following components in percentage by weight: 20-50% of Ag, 5-50% of Pd and RuO20-20% and 5-40% of glass composition; the glass composition comprises glassGlass composition a, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-30%, the weight percentage of the glass composition B is 0-30%, the weight percentage of the glass composition C is 30-70%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component d comprises the following components in percentage by weight: 20-50% of Ag, 5-50% of Pd and RuO20-20%, 5-40% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-30%, the weight percentage of the glass composition B is 0-30%, and the weight percentage of the glass composition C is 30-70%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component d, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 1 omega/□ and the thick film resistor paste with the resistance value of 0.1 omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase components of the glass phase and the conductive phase in the thick film resistor paste with the resistance value of 1 omega/□ and the thick film resistor paste with the resistance value of 0.1 omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 0.1 omega/□ -1 omega/□, wherein the thick film resistor paste with the resistance range of 0.1 omega/□ -1 omega/□ is formed by mixing the thick film resistor paste with the resistance of 0.1 omega/□ and the thick film resistor paste with the resistance of 1 omega/□.
The invention also provides thick film resistor paste with the resistance range of 1 omega/□ -10 omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 1 omega/□ and the thick film resistor paste with the resistance of 10 omega/□;
the thick film resistor paste with the resistance value of 1 omega/□ and the thick film resistor paste with the resistance value of 10 omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick film resistor paste with the resistance value of 1 omega/□ comprises at least one of a solid phase component c and a solid phase component d;
the solid phase component c comprises the following components in percentage by weight: 20-50% of Ag, 5-50% of Pd and RuO20 to 20 percent and glass composition 5 to E40 percent; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-30%, the weight percentage of the glass composition B is 0-30%, the weight percentage of the glass composition C is 30-70%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component d comprises the following components in percentage by weight: 20-50% of Ag, 5-50% of Pd and RuO20-20%, 5-40% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-30%, the weight percentage of the glass composition B is 0-30%, and the weight percentage of the glass composition C is 30-70%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component d, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the solid phase component e comprises the following components in percentage by weight: 10-40% of Ag, 0-20% of Pd and RuO220-50% of glass composition and 20-60% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-40%, the weight percentage of the glass composition C is 20-60%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component f comprises the following componentsThe components with the weight percentage content are as follows: 10-40% of Ag, 0-20% of Pd and RuO220-50%, 20-60% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-40%, and the weight percentage of the glass composition C is 20-60%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component f, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 1 omega/□ and the thick film resistor paste with the resistance value of 10 omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with the resistance value of 10 omega/□ and the thick film resistor paste with the resistance value of 1 omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 1 omega/□ -10 omega/□, wherein the thick film resistor paste with the resistance range of 1 omega/□ -10 omega/□ is formed by mixing the thick film resistor paste with the resistance of 1 omega/□ and the thick film resistor paste with the resistance of 10 omega/□.
The invention also provides thick film resistor paste with the resistance range of 10 omega/□ -100 omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 10 omega/□ and the thick film resistor paste with the resistance of 100 omega/□;
the thick film resistor paste with the resistance value of 10 omega/□ and the thick film resistor paste with the resistance value of 100 omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick film resistor paste with the resistance value of 10 omega/□ comprises at least one of a solid phase component e and a solid phase component f;
the solid phase component e comprises the following components in percentage by weight: 10-40% of Ag, 0-20% of Pd and RuO220-50% of glass composition and 20-60% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-40%, the weight percentage of the glass composition C is 20-60%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component f comprises the following components in percentage by weight: 10-40% of Ag, 0-20% of Pd and RuO220-50%, 20-60% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-40%, and the weight percentage of the glass composition C is 20-60%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component f, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the thick film resistor paste with the resistance value of 100 omega/□ comprises at least one of a solid phase component g and a solid phase component h;
the solid phase component g comprises the following components in percentage by weight: 0-20% of Ag, 0-10% of Pd, and RuO220-50% of glass composition and 30-70% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 20-50%, the weight percentage of the glass composition C is 10-40%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component h comprises the following components in percentage by weight: 0-20% of Ag, 0-10% of Pd, and RuO220-50%, 30-70% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the glassThe weight percentage of the composition A is 10-40%, the weight percentage of the glass composition B is 20-50%, and the weight percentage of the glass composition C is 10-40%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component h, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 10 omega/□ and the thick film resistor paste with the resistance value of 100 omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with 10 omega/□ and the thick film resistor paste with the resistance value of 100 omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 10 omega/□ -100 omega/□, wherein the thick film resistor paste with the resistance range of 10 omega/□ -100 omega/□ is formed by mixing the thick film resistor paste with the resistance of 10 omega/□ and the thick film resistor paste with the resistance of 100 omega/□.
The invention also provides thick film resistor paste with the resistance range of 100 omega/□ -1 k omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 100 omega/□ and the thick film resistor paste with the resistance of 1k omega/□;
the thick film resistor paste with the resistance value of 100 omega/□ and the thick film resistor paste with the resistance value of 1k omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick film resistor paste with the resistance value of 100 omega/□ comprises at least one of a solid phase component g and a solid phase component h;
the solid phase component g comprises the following components in percentage by weight: 0-20% of Ag, 0-10% of Pd, and RuO220-50% of glass composition and 30-70% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 20-50%, the weight percentage of the glass composition C is 10-40%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component h comprises the following components in percentage by weight: 0-20% of Ag, 0-10% of Pd, and RuO220-50%, 30-70% of glass composition and 0.1-27% of inorganic filler; the glass composition comprises a glass composition A, a glass composition B and glassA glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 20-50%, and the weight percentage of the glass composition C is 10-40%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component h, the weight percentage of CuO is 0.1-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the solid phase component i comprises the following components in percentage by weight: RuO2 5～30％、Pb2Ru2O60-30% and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-50%, the weight percentage of the glass composition C is 15-50%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component j comprises the following components in percentage by weight: RuO2 5～30％、Pb2Ru2O60-30%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-50%, and the weight percentage of the glass composition C is 15-50%; the inorganic filler contains CuO and MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component j, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 1k omega/□ and the thick film resistor paste with the resistance value of 100 omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with the resistance value of 1k omega/□ and the thick film resistor paste with the resistance value of 100 omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 100 omega/□ -1 k omega/□, wherein the thick film resistor paste with the resistance range of 100 omega/□ -1 k omega/□ is formed by mixing the thick film resistor paste with the resistance of 100 omega/□ and the thick film resistor paste with the resistance of 1k omega/□.
The invention also provides thick film resistor paste with the resistance range of 1k omega/□ -10 k omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 1k omega/□ and the thick film resistor paste with the resistance of 10k omega/□;
the thick film resistor paste with the resistance value of 1k omega/□ and the thick film resistor paste with the resistance value of 10k omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick film resistor paste with the resistance value of 1k omega/□ comprises at least one of a solid phase component i and a solid phase component j;
the solid phase component i comprises the following components in percentage by weight: RuO2 5～30％、Pb2Ru2O60-30% and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-50%, the weight percentage of the glass composition C is 15-50%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component j comprises the following components in percentage by weight: RuO2 5～30％、Pb2Ru2O60-30%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 10-50%, and the weight percentage of the glass composition C isThe content is 15-50%; the inorganic filler contains CuO and MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component j, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the thick film resistor paste with the resistance value of 10k omega/□ comprises at least one of a solid phase component k and a solid phase component l;
the solid phase component k comprises the following components in percentage by weight: RuO2 0～20％、Pb2Ru2O610-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 20-50%, the weight percentage of the glass composition B is 20-50%, the weight percentage of the glass composition C is 10-40%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component l comprises the following components in percentage by weight: RuO2 0～20％、Pb2Ru2O610-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 20-50%, the weight percentage of the glass composition B is 20-50%, and the weight percentage of the glass composition C is 10-40%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component l, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 1k omega/□ and the thick film resistor paste with the resistance value of 10k omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with the resistance value of 10k omega/□ and the thick film resistor paste with the resistance value of 1k omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 1k omega/□ -10 k omega/□, wherein the thick film resistor paste with the resistance range of 1k omega/□ -10 k omega/□ is formed by mixing the thick film resistor paste with the resistance of 1k omega/□ and the thick film resistor paste with the resistance of 10k omega/□.
The invention also provides thick film resistor paste with the resistance range of 10k omega/□ -100 k omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 10k omega/□ and the thick film resistor paste with the resistance of 100k omega/□;
the thick film resistor paste with the resistance value of 10k omega/□ and the thick film resistor paste with the resistance value of 100k omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick film resistor paste with the resistance value of 10k omega/□ comprises at least one of a solid phase component k and a solid phase component l;
the solid phase component k comprises the following components in percentage by weight: RuO2 0～20％、Pb2Ru2O610-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 20-50%, the weight percentage of the glass composition B is 20-50%, the weight percentage of the glass composition C is 10-40%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component l comprises the following components in percentage by weight: RuO2 0～20％、Pb2Ru2O610-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 20-50%, the weight percentage of the glass composition B is 20-50%,the weight percentage content of the glass composition C is 10-40%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component l, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the thick film resistor paste with the resistance value of 100k omega/□ comprises at least one of a solid phase component m and a solid phase component n;
the solid phase component m comprises the following components in percentage by weight: RuO2 0～10％、Pb2Ru2O618-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, the weight percentage of the glass composition C is 10-30%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component n comprises the following components in percentage by weight: RuO2 0～10％、Pb2Ru2O618-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, and the weight percentage of the glass composition C is 10-30%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component n, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 100k omega/□ and the thick film resistor paste with the resistance value of 10k omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with 10k omega/□ and the thick film resistor paste with the resistance value of 100k omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 10k omega/□ -100 k omega/□, wherein the thick film resistor paste with the resistance range of 10k omega/□ -100 k omega/□ is formed by mixing the thick film resistor paste with the resistance of 10k omega/□ and the thick film resistor paste with the resistance of 100k omega/□.
The invention also provides thick film resistor paste with the resistance range of 100k omega/□ -1M omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 100k omega/□ and the thick film resistor paste with the resistance of 1M omega/□;
the thick film resistor paste with the resistance value of 100k omega/□ and the thick film resistor paste with the resistance value of 1M omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick film resistor paste with the resistance value of 1M omega/□ comprises at least one of a solid phase component M and a solid phase component n;
the solid phase component m comprises the following components in percentage by weight: RuO2 0～10％、Pb2Ru2O618-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, the weight percentage of the glass composition C is 10-30%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component n comprises the following components in percentage by weight: RuO2 0～10％、Pb2Ru2O618-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, and the glass groupThe weight percentage of the compound B is 30-60%, and the weight percentage of the glass composition C is 10-30%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component n, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the thick-film resistor paste with the resistance value of 1M omega/□ comprises at least one of a solid-phase component o and a solid-phase component p;
the solid phase component o comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O618-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, the weight percentage of the glass composition C is 10-20%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component p comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O618-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, and the weight percentage of the glass composition C is 10-20%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component p, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 1M omega/□ and the thick film resistor paste with the resistance value of 100k omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with the resistance value of 1M omega/□ and the thick film resistor paste with the resistance value of 100k omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 100k omega/□ -1M omega/□, wherein the thick film resistor paste with the resistance range of 100k omega/□ -1M omega/□ is formed by mixing the thick film resistor paste with the resistance of 100k omega/□ and the thick film resistor paste with the resistance of 1M omega/□.
The invention also provides thick film resistor paste with the resistance range of 1M omega/□ -10M omega/□, wherein the resistor paste is prepared from the thick film resistor paste with the resistance of 1M omega/□ and the thick film resistor paste with the resistance of 10M omega/□;
the thick film resistor paste with the resistance value of 1M omega/□ and the thick film resistor paste with the resistance value of 10M omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick-film resistor paste with the resistance value of 1M omega/□ comprises at least one of a solid-phase component o and a solid-phase component p;
the solid phase component o comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O618-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, the weight percentage of the glass composition C is 10-20%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component p comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O618-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is10-40%, 30-60% of the glass composition B by weight and 10-20% of the glass composition C by weight; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component p, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the thick film resistor paste with the resistance value of 10M omega/□ comprises at least one of a solid phase component q and a solid phase component r;
the solid phase component q comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O610-40% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 40-60%, the weight percentage of the glass composition C is 10-20%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component r comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O610-40%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 40-60%, and the weight percentage of the glass composition C is 10-20%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component r, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage of the component (A) is 0-13%.
After the thick film resistor paste with the resistance value of 10M omega/□ and the thick film resistor paste with the resistance value of 1M omega/□ are mixed in any proportion, the electrical property of the obtained resistor paste cannot be deteriorated, the resistor paste has good mixing performance, any resistance value between two adjacent resistance values can be obtained by adjusting the mixing proportion of the adjacent resistance values, an intermediate resistance value is not required to be prepared, and the production and manufacturing cost is reduced.
By controlling the glass phase and the glass phase component of the conductive phase in the thick film resistor paste with the resistance value of 10M omega/□ and the thick film resistor paste with the resistance value of 1M omega/□, the components of the glass phase can be controlled within a certain range after mixing, and the variation proportion of the conductive phase is controlled, so that the large proportion difference between two adjacent conductive phases is avoided as much as possible.
Preferably, the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
Preferably, the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0-20%.
The resin can be completely volatilized and decomposed at 400-600 ℃; the solvent has a uniform volatilization curve at 100-400 ℃, so that cracks or bubbles cannot be generated on the film-formed resin, and the surface appearance defects after sintering cannot be caused. The solvent may be selected from terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate and dioctyl phthalate.
Preferably, the resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
The invention also provides a preparation method of the thick film resistor paste with the resistance range of 1M omega/□ -10M omega/□, wherein the thick film resistor paste with the resistance range of 1M omega/□ -10M omega/□ is formed by mixing the thick film resistor paste with the resistance of 1M omega/□ and the thick film resistor paste with the resistance of 10M omega/□.
The invention has the beneficial effects that: the invention provides thick film resistor paste, the thick film resistor can obtain any resistance value between adjacent resistance values by mixing the thick film resistor paste of nine adjacent resistance values of 0.1 omega/□, 1 omega/□, 10 omega/□, 100 omega/□, 1k omega/□, 10k omega/□, 100k omega/□, 1M omega/□ and 10M omega/□ in the range of 0.1 omega/□ -10M omega/□, the paste mixing of the adjacent resistance values has good mixing performance, the electrical performance is not deteriorated after mixing, and the specific expression is that: (1) the resistance obtained after mixing can be kept at the TCR of +/-100 ppm, and particularly can still ensure the TCR of +/-100 ppm at the sintering temperature of 820-880 ℃; (2) the electrostatic performance after mixing is between the two resistance levels and cannot exceed the two resistance levels after mixing. The resistance paste obtained by mixing the resistance pastes of adjacent resistance levels according to any ratio has the precious metal content lower than that of a commercial product in a low resistance section (0.1 omega, 1 omega and 10 omega), but has equivalent performance, so the cost is low, the cost performance is higher, and the production cost is greatly reduced.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
In an embodiment of the 0.1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: ag 20%, Pd 65% and glass composition 15%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 5 weight percent, the content of the glass composition B is 24 weight percent, the content of the glass composition C is 70 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O35％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 15％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 2
In an embodiment of the 0.1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: ag 60%, Pd 5%, RuO220% and glass composition 15%; the glass composition comprises a glass composition A, a glass composition B, a glass composition C and a glass groupCompound D; in the glass composition, the content of the glass composition A is 20 weight percent, the content of the glass composition B is 50 weight percent, the content of the glass composition C is 20 weight percent, and the content of the glass composition D is 10 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、Al2O315% and B2O310％；
The glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 3
In an embodiment of the 0.1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: ag 60%, Pd 15%, RuO220% and glass composition 5%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 20 weight percent, the content of the glass composition B is 50 weight percent, the content of the glass composition C is 20 weight percent, and the content of the glass composition D is 10 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、K2O 10％、Al2O315％、B2O325% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is CuO and MnO2A mixture of (a).
Example 4
In an embodiment of the 0.1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: 20% of Ag, 40% of Pd and RuO210%, glass composition 20% and inorganic filler 10%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 20 weight percent, the content of the glass composition B is 50 weight percent, and the content of the glass composition C is 30 weight percent; the inorganic filler contains CuO and MnO2And ZrSiO4(ii) a In the solid phase component, the weight percentage of CuO is 2%, and MnO23% by weight of ZrSiO4The weight percentage content of the compound is 5 percent;
the glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 5
In an embodiment of the 0.1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: 55% of Ag, 13% of Pd, 5% of glass composition and 27% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 5 weight percent, the content of the glass composition B is 25 weight percent, and the content of the glass composition C is 70 weight percent; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4(ii) a In the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2Is 2% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glassThe glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、K2O 8％、Al2O312％、B2O310% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 6
In an embodiment of the 1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: 20% of Ag, 50% of Pd and 30% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 30 percent by weight, the content of the glass composition B is 30 percent by weight, the content of the glass composition C is 30 percent by weight, and the content of the glass composition D is 10 percent by weight;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 7
In an embodiment of the 1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: 50% of Ag, 5% of Pd and RuO25% and glass composition 40%; the glass composition comprises glass composition a, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 29 weight percent, the content of the glass composition C is 70 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 8
In an embodiment of the 1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: 40% of Ag, 20% of Pd and 40% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 30 weight percent, the content of the glass composition B is 20 weight percent, the content of the glass composition C is 45 weight percent, and the content of the glass composition D is 5 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 35％、SrO 10％、Na2O 10％、、Al2O31％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is MnO2。
Example 9
In an embodiment of the 1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: 20% of Ag, 40% of Pd and RuO210%, glass composition 20% and inorganic filler 10%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 10% by weight, andthe weight percentage of the glass composition B is 30 percent, and the weight percentage of the glass composition C is 60 percent; the inorganic filler contains CuO and MnO2And ZrSiO4(ii) a In the solid phase component, the weight percentage of CuO is 2%, and MnO23% by weight of ZrSiO4The weight percentage content of the compound is 5 percent;
the glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 10
In an embodiment of the 1 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: ag 550%, Pd 13%, glass composition 5% and inorganic filler 27%; the glass composition comprises glass composition A and glass composition C; in the glass composition, the content of the glass composition A is 30% by weight, and the content of the glass composition C is 70% by weight; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4(ii) a In the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2Is 2% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 11
According to an embodiment of the 10 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid phase component and an organic phase component, and the weight ratio of the solid phase component to the organic phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: ag 10%, Pd 20%, RuO220% and glass composition 50%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 40 weight percent, the content of the glass composition C is 30 weight percent, and the content of the glass composition D is 20 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 12
According to an embodiment of the 10 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid phase component and an organic phase component, and the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: 30% of Ag and RuO250% and 20% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 10 weight percent, the content of the glass composition C is 40 weight percent, and the content of the glass composition D is 10 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 15％、、Al2O315％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following weight percentThe components of the content: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 13
According to an embodiment of the 10 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid phase component and an organic phase component, and the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: ag 40%, Pd 20%, RuO220% and glass composition 20%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 19 weight percent, the content of the glass composition B is 10 weight percent, the content of the glass composition C is 70 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、Na2O 10％、K2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is MnO2。
Example 14
According to an embodiment of the 10 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid phase component and an organic phase component, and the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: ag 13% and RuO240%, glass composition 20% and inorganic filler 27%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 40 weight percent, and the content of the glass composition C is 50 weight percent; the inorganic filler contains MnO2、Nb2O5、SiO2、ZrO2And ZrSiO4(ii) a In the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2Is 2% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 15
According to an embodiment of the 10 Ω/□ thick-film resistor paste of the present invention, the thick-film resistor paste includes a solid phase component and an organic phase component, and the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: ag 20%, Pd 20%, RuO220%, glass composition 20% and inorganic filler 20%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 10 weight percent, and the content of the glass composition C is 50 weight percent; the inorganic filler contains CuO and MnO2、ZrO2And ZrSiO4(ii) a In the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight of ZrO2Is 2 percent by weight, ZrSiO4The content of (B) is 12% by weight.
The glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 16
In an embodiment of the thick-film resistor paste of 100 Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: RuO250% and glass composition 50%; the glassThe composition comprises glass composition A, glass composition B, glass composition C and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 30 weight percent, the content of the glass composition C is 40 weight percent, and the content of the glass composition D is 20 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O35％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 17
In an embodiment of the thick-film resistor paste of 100 Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: 20% of Ag, 10% of Pd and RuO220% and glass composition 50%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the glass compositionThe content of the substance A is 40 percent by weight, the content of the glass composition B is 30 percent by weight, the content of the glass composition C is 10 percent by weight, and the content of the glass composition D is 20 percent by weight;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 15％、SrO 5％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 18
In an embodiment of the thick-film resistor paste of 100 Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: ag 10%, Pd 10%, RuO250% and 30% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 14 weight percent, the content of the glass composition B is 50 weight percent, the content of the glass composition C is 35 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、SrO 10％、Na2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is Ta2O5。
Example 19
In an embodiment of the thick-film resistor paste of 100 Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: RuO250%, glass composition 30% and inorganic filler 20%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 30 weight percent, and the content of the glass composition C is 30 weight percent; the inorganic filler is CuO or Nb2O5、TiO2、ZrO2And ZrSiO4In the solid phase component, CuO accounts for 3 wt%, and Nb accounts for2O53% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The content of (B) is 11% by weight.
The glass composition A comprises the following components in percentage by weight: PbO 20%、SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 20
In an embodiment of the thick-film resistor paste of 100 Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: 20% of Ag, 10% of Pd and RuO220%, glass composition 10% and inorganic filler 27%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 20 weight percent, and the content of the glass composition C is 40 weight percent; the inorganic filler is CuO or MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4A mixture of (a); in the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2Is 2% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 21
In an embodiment of the 1k Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: RuO2 5％、Pb2Ru2O630% and glass composition 65%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 50 weight percent, the content of the glass composition C is 20 weight percent, and the content of the glass composition D is 20 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 22
In an embodiment of the 1k Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO230% and glass composition 70%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 10 weight percent, the content of the glass composition C is 45 weight percent, and the content of the glass composition D is 5 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 15％、Al2O315％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 23
In an embodiment of the 1k Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 5％、Pb2Ru2O615% and glass composition 80%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 39 weight percent, the content of the glass composition C is 50 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、SrO 10％、Na2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is Ta2O5、TiO2And ZrO2A mixture of (a).
Example 24
In an embodiment of the 1k Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: RuO2 30％、Pb2Ru2O610%, glass composition 50% and inorganic filler 10%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 50 weight percent, and the content of the glass composition C is 40 weight percent; the inorganic filler is CuO or ZrO2And ZrSiO4A mixture of (a); in the solid phase component, the weight percentage of CuO is 1 percent, ZrO2Is 2 percent by weight, ZrSiO4The content of (B) is 7% by weight.
The glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 25
In an embodiment of the 1k Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following componentsThe components by weight percentage are as follows: RuO25%, glass composition 63% and inorganic filler 32%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 10 weight percent, and the content of the glass composition C is 50 weight percent; the inorganic filler is CuO or MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4A mixture of (a); in the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2In a weight percent of 2%, Ta2O5Is 5% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 26
According to one embodiment of the 10k Ω/□ thick-film resistor paste, the thick-film resistor paste includes solid-phase components and organic-phase components, and the weight ratio of the solid-phase components to the organic-phase components is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O650% and glass composition 50%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 20 percent by weight, the content of the glass composition B is 20 percent by weight, the content of the glass composition C is 40 percent by weight, and the content of the glass composition D is 20 percent by weight;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 27
According to one embodiment of the 10k Ω/□ thick-film resistor paste, the thick-film resistor paste includes solid-phase components and organic-phase components, and the weight ratio of the solid-phase components to the organic-phase components is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 20％、Pb2Ru2O610% and glass groupCompound 70%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 50 weight percent, the content of the glass composition B is 39 weight percent, the content of the glass composition C is 10 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 15％、Al2O315％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 28
According to one embodiment of the 10k Ω/□ thick-film resistor paste, the thick-film resistor paste includes solid-phase components and organic-phase components, and the weight ratio of the solid-phase components to the organic-phase components is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 10％、Pb2Ru2O610% and glass composition 80%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 45 percent, the weight percentage of the glass composition B is 35 percent, the weight percentage of the glass composition C is 10 percent, and the glass groupThe weight percentage content of the compound D is 10 percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、Na2O 10％、K2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is Ta2O5、TiO2And ZrO2A mixture of (a).
Example 29
According to one embodiment of the 10k Ω/□ thick-film resistor paste, the thick-film resistor paste includes solid-phase components and organic-phase components, and the weight ratio of the solid-phase components to the organic-phase components is: solid phase components: organic phase component 50: 50;
the solid phase component contains the following component Pb in percentage by weight2Ru2O618%, glass composition 50% and inorganic filler 32%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 20 weight percent, the content of the glass composition B is 50 weight percent, and the content of the glass composition C is 30 weight percent; the inorganic filler is CuO or MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4The mixture of (1);in the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2In a weight percent of 2%, Ta2O5Is 5% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 30
According to one embodiment of the 10k Ω/□ thick-film resistor paste, the thick-film resistor paste includes solid-phase components and organic-phase components, and the weight ratio of the solid-phase components to the organic-phase components is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: RuO2 5％、Pb2Ru2O610%, glass composition 80% and inorganic filler 5%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 50 weight percent, the content of the glass composition B is 20 weight percent, and the content of the glass composition C is 30 weight percent; the inorganic filler is CuO and MnO2A mixture of (a); in the solid phase component, the weight percentage of CuO is 2 percent,MnO2the weight percentage content of the (B) is 3 percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 31
In an embodiment of the thick-film resistor paste of 100k Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O620% and glass composition 80%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 60 weight percent, the content of the glass composition C is 10 weight percent, and the content of the glass composition D is 20 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 32
In an embodiment of the thick-film resistor paste of 100k Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 10％、Pb2Ru2O620% and glass composition 70%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 34 weight percent, the content of the glass composition C is 25 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 5％、Na2O 10％、Al2O3 15％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weightDividing into: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 33
In an embodiment of the thick-film resistor paste of 100k Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O650% and glass composition 50%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 60 weight percent, the content of the glass composition C is 20 weight percent, and the content of the glass composition D is 10 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、SrO 10％、K2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O3 6％And 8% of a transition metal oxide, the transition metal oxide being Ta2O5、TiO2And ZrO2A mixture of (a).
Example 34
In an embodiment of the thick-film resistor paste of 100k Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O618%, glass composition 50% and inorganic filler 32%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 60 weight percent, and the content of the glass composition C is 30 weight percent; the inorganic filler is CuO or MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4The mixture of (1); in the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2In a weight percent of 2%, Ta2O5Is 5% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%; the glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass compositionC comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 35
In an embodiment of the thick-film resistor paste of 100k Ω/□ of the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: RuO2 10％、Pb2Ru2O625%, glass composition 60% and inorganic filler 5%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 30 weight percent, the content of the glass composition B is 60 weight percent, and the content of the glass composition C is 10 weight percent; the inorganic filler is MnO2And ZrSiO4A mixture of (a); in the solid phase component, MnO2Is 2 percent by weight, ZrSiO4The content of (B) is 3% by weight.
The glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 36
In an embodiment of the 1M Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O650% and glass composition 50%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 60 weight percent, the content of the glass composition C is 20 weight percent, and the content of the glass composition D is 10 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 37
In an embodiment of the 1M Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 10％、Pb2Ru2O620% and glass composition 70%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 44 weight percent, the content of the glass composition C is 15 weight percent, and the content of the glass composition D is 1 weight percent;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 15％、Al2O315％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 38
In an embodiment of the 1M Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 15％、Pb2Ru2O635% and glass composition 60%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass compositionThe glass composition A is 40 weight percent, the glass composition B is 20 weight percent, the glass composition C is 25 weight percent, and the glass composition D is 15 weight percent;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 22 75％、Na2O 10％、K2O 10％、Al2O3 1％、B2O31% and ZnO 3%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is Ta2O5、TiO2And ZrO2A mixture of (a).
Example 39
In an embodiment of the 1M Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O645%, glass composition 50% and inorganic filler 5%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 30 weight percent, and the content of the glass composition C is 20 weight percent; the inorganic fillerThe material contains Nb2O5(ii) a Among the solid phase components, Nb2O5Is 3% by weight of Ta2O5The weight percentage content of (A) is 2%;
the glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 40
In an embodiment of the 1M Ω/□ thick-film resistor paste according to the present invention, the thick-film resistor paste includes a solid-phase component and an organic-phase component, and the weight ratio of the solid-phase component to the organic-phase component is: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: pb, Pb2Ru2O618%, glass composition 50% and inorganic filler 32%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 60 weight percent, and the content of the glass composition C is 30 weight percent; the inorganic filler is CuO or MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4A mixture of (a); in the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2In a weight percent of 2%, Ta2O5Is 5% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 40％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
EXAMPLE 41
According to an embodiment of the 10M omega/□ thick-film resistor paste, the thick-film resistor paste comprises a solid-phase component and an organic-phase component, wherein the weight ratio of the solid-phase component to the organic-phase component is as follows: solid phase components: the organic phase component is 35: 65;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O610% and glass composition 90%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 10 weight percent, the content of the glass composition B is 60 weight percent, the content of the glass composition C is 10 weight percent, and the content of the glass composition D is 20 weight percent;
the glass composition A comprises the following components in percentage by weight: 10% of PbO and SiO2 35％、CaO 30％、Al2O320% and B2O3 5％；
The glassThe glass composition B comprises the following components in percentage by weight: SiO 22 40％、SrO 20％、Na2O 10％、K2O 10％、Al2O3 5％、B2O35% and ZnO 10%;
the glass composition C comprises the following components in percentage by weight: PbO 88% and SiO210％、Al2O31% and B2O3 1％；
The glass composition D comprises the following components in percentage by weight: PbO 60%, SiO2 10％、Al2O38％、B2O32 percent and 20 percent of transition metal oxide, wherein the transition metal oxide is CuO or MnO2、Nb2O5、Ta2O5、TiO2And ZrO2A mixture of (a).
Example 42
According to an embodiment of the 10M omega/□ thick-film resistor paste, the thick-film resistor paste comprises a solid-phase component and an organic-phase component, wherein the weight ratio of the solid-phase component to the organic-phase component is as follows: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: RuO2 5％、Pb2Ru2O635% and glass composition 60%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 40% by weight, the content of the glass composition B is 49% by weight, the content of the glass composition C is 10% by weight, and the content of the glass composition D is 1% by weight;
the glass composition A comprises the following components in percentage by weight: PbO 50%, SiO2 35％、CaO 5％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40％、BaO 15％、Al2O315％、B2O325% and ZnO 5%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 88% and SiO2 10％、Al2O31% and B2O3 1％。
Example 43
According to an embodiment of the 10M omega/□ thick-film resistor paste, the thick-film resistor paste comprises a solid-phase component and an organic-phase component, wherein the weight ratio of the solid-phase component to the organic-phase component is as follows: solid phase components: organic phase composition 75: 25;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O640% and glass composition 60%; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the content of the glass composition A is 20 percent by weight, the content of the glass composition B is 40 percent by weight, the content of the glass composition C is 20 percent by weight, and the content of the glass composition D is 20 percent by weight;
the glass composition A comprises the following components in percentage by weight: 30% of PbO and SiO2 40％、CaO 5％、Al2O3 5％、B2O310% and ZnO 10%;
the glass composition B comprises the following components in percentage by weight: SiO 2270％、SrO 10％、K2O 10％、Al2O3 1％、B2O31% and ZnO 8%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO230％、Al2O31％、B2O39% and ZnO 10%;
the glass composition D comprises the following components in percentage by weight: PbO 50%, SiO2 28％、Al2O38％、B2O36 percent and 8 percent of transition metal oxide, wherein the transition metal oxide is Ta2O5、TiO2And ZrO2A mixture of (a).
Example 44
According to an embodiment of the 10M omega/□ thick-film resistor paste, the thick-film resistor paste comprises a solid-phase component and an organic-phase component, wherein the weight ratio of the solid-phase component to the organic-phase component is as follows: solid phase components: organic phase component 50: 50;
the solid phase component comprises the following components in percentage by weight: pb2Ru2O610%, 80% of glass composition and 10% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 40 weight percent, and the content of the glass composition C is 20 weight percent; the inorganic filler is ZrO2And ZrSiO4A mixture of (a); in the solid phase component, ZrO2Is 2 percent by weight, ZrSiO4The content of (B) is 8% by weight.
The glass composition A comprises the following components in percentage by weight: PbO 20% and SiO2 35％、CaO 22％、Al2O3 10％、B2O35% and ZnO 8%;
the glass composition B comprises the following components in percentage by weight: SiO 22 60％、BaO 12％、SrO 8％、Na2O 10％、K2O 2％、Al2O35％、B2O32% and ZnO 1%;
the glass composition C comprises the following components in percentage by weight: PbO 71% and SiO2 10％、Al2O37％、B2O36% and ZnO 6%.
Example 45
According to an embodiment of the 10M omega/□ thick-film resistor paste, the thick-film resistor paste comprises a solid-phase component and an organic-phase component, wherein the weight ratio of the solid-phase component to the organic-phase component is as follows: solid phase components: organic phase component 60: 40;
the solid phase component comprises the following components in percentage by weight: RuO2 8％、Pb2Ru2O610%, glass composition 50% and inorganic filler 32%; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the content of the glass composition A is 40 weight percent, the content of the glass composition B is 50 weight percent, and the content of the glass composition C is 10 weight percent; the inorganic filler is CuO or MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4A mixture of (a); in the solid phase component, the weight percentage of CuO is 3%, MnO2Is 3% by weight, Nb2O5Is 3% by weight of SiO2In a weight percent of 2%, Ta2O5Is 5% by weight of TiO2Is 1% by weight of ZrO2Is 2 percent by weight, ZrSiO4The weight percentage content of (A) is 13%; the glass composition A comprises the following components in percentage by weight: PbO 10%, SiO240％、CaO 30％、Al2O3 10％、B2O35% and ZnO 5%;
the glass composition B comprises the following components in percentage by weight: SiO 22 50％、BaO 10％、SrO 14％、Na2O 8％、K2O 3％、Al2O3 5％、B2O34% and ZnO 6%;
the glass composition C comprises the following components in percentage by weight: PbO 50%, SiO2 30％、Al2O310％、B2O38% and ZnO 2%.
Example 46
An example of the 0.46 Ω/□ thick-film resistor paste of the present invention was prepared by mixing the 0.1 Ω/□ thick-film resistor paste of example 1 and the 1 Ω/□ thick-film resistor paste of example 6 in a weight ratio of 1: 1.
Example 47
An example of the 0.63 Ω/□ thick-film resistor paste of the present invention was prepared by mixing the 0.1 Ω/□ thick-film resistor paste of example 5 and the 1 Ω/□ thick-film resistor paste of example 9 in a weight ratio of 1: 4.
Example 48
An example of the 5.9 Ω/□ thick-film resistor paste of the present invention was prepared by mixing the 1 Ω/□ thick-film resistor paste of example 5 and the 10 Ω/□ thick-film resistor paste of example 13 in a weight ratio of 3: 7.
Example 49
An example of the 2.3 Ω/□ thick-film resistor paste of the present invention was prepared by mixing the 1 Ω/□ thick-film resistor paste of example 9 and the 10 Ω/□ thick-film resistor paste of example 11 in a weight ratio of 7: 3.
Example 50
An example of the 81.3 Ω/□ thick-film resistor paste of the present invention was prepared by mixing the 10 Ω/□ thick-film resistor paste of example 11 and the 100 Ω/□ thick-film resistor paste of example 19 at a weight ratio of 1: 4.
Example 51
An example of a 15.9 Ω/□ thick-film resistor paste according to the present invention was prepared by mixing the 10 Ω/□ thick-film resistor paste of example 13 and the 100 Ω/□ thick-film resistor paste of example 17 in a weight ratio of 4: 1.
Example 52
An example of 823.1 Ω/□ thick-film resistor paste according to the present invention was prepared by mixing 100 Ω/□ thick-film resistor paste according to example 17 and 1k Ω/□ thick-film resistor paste according to example 21 in a weight ratio of 1: 9.
Example 53
An example of the 134.8 Ω/□ thick-film resistor paste of the present invention was prepared by mixing the 100 Ω/□ thick-film resistor paste of example 19 with the 1k Ω/□ thick-film resistor paste of example 24 in a weight ratio of 9: 1.
Example 54
An example of a 4.12k Ω/□ thick film resistor paste according to the present invention was prepared by mixing 1k Ω/□ thick film resistor paste as described in example 21 and 10k Ω/□ thick film resistor paste as described in example 30 in a weight ratio of 1: 1.
Example 55
An example of a 7.48k Ω/□ thick film resistor paste according to the present invention was prepared by mixing 1k Ω/□ thick film resistor paste as described in example 24 and 10k Ω/□ thick film resistor paste as described in example 27 in a weight ratio of 1: 4.
Example 56
An example of a 72.8k Ω/□ thick film resistor paste according to the present invention was prepared by mixing the 10k Ω/□ thick film resistor paste described in example 30 and the 100k Ω/□ thick film resistor paste described in example 31 in a weight ratio of 3: 7.
Example 57
An example of a 24.3k Ω/□ thick film resistor paste according to the present invention was prepared by mixing the 10k Ω/□ thick film resistor paste described in example 30 and the 100k Ω/□ thick film resistor paste described in example 35 in a weight ratio of 7: 3.
Example 58
An example of 671.7 kQ/□ thick-film resistor paste according to the invention was prepared by mixing 100 kQ/□ thick-film resistor paste according to example 31 and 1 MQ/□ thick-film resistor paste according to example 40 in a weight ratio of 1: 4.
Example 59
An example of 187.9 kQ/□ thick film resistor paste of the present invention was prepared by mixing 100 kQ/□ thick film resistor paste of example 35 and 1 MQ/□ thick film resistor paste of example 40 in a weight ratio of 4: 1.
Example 60
An example of a 7.97M Ω/□ thick film resistor paste of the present invention was prepared by mixing 1M Ω/□ thick film resistor paste of example 40 and 10M Ω/□ thick film resistor paste of example 45 in a weight ratio of 1: 9.
Example 61
An example of a 4.1M Ω/□ thick film resistor paste according to the present invention was prepared by mixing the 1M Ω/□ thick film resistor paste of example 40 and the 10M Ω/□ thick film resistor paste of example 45 in a weight ratio of 4: 6.
Comparative example 1
A comparative example of the thick-film resistor paste of the present invention is a commercially available thick-film resistor paste of 0.1 Ω/□.
Comparative example 2
A comparative example of a thick-film resistor paste according to the present invention, this comparative example is a commercially available thick-film resistor paste of 1 Ω/□.
Comparative example 3
A comparative example of a thick-film resistor paste according to the present invention, this comparative example is a commercially available thick-film resistor paste of 10 Ω/□.
Comparative example 4
A comparative example of the thick-film resistor paste of the present invention is a commercially available thick-film resistor paste of 100 Ω/□.
Comparative example 5
A comparative example of a thick-film resistor paste according to the present invention, this comparative example is a commercially available thick-film resistor paste of 1 kOmega/□.
Comparative example 6
A comparative example of a thick-film resistor paste according to the present invention, this comparative example is a commercially available thick-film resistor paste of 10 kOmega/□.
Comparative example 7
A comparative example of a thick-film resistor paste according to the present invention, this comparative example is a commercially available thick-film resistor paste of 100 kO/□.
Comparative example 8
A comparative example of the thick-film resistor paste of the present invention is a commercially available 1M Ω/□ thick-film resistor paste.
Comparative example 9
A comparative example of a thick-film resistor paste according to the present invention, this comparative example is a commercially available thick-film resistor paste of 10M Ω/□.
Comparative example 10
A comparative example of the thick-film resistor paste of the present invention, which is prepared by mixing the thick-film resistor paste of 100 Ω/□ described in comparative example 4 and the thick-film resistor paste of 1k Ω/□ described in comparative example 5 in a ratio of 1:9 by weight ratio.
Comparative example 11
A comparative example of the thick-film resistor paste of the present invention, which is prepared by mixing the thick-film resistor paste of 1k Ω/□ described in comparative example 5 and the thick-film resistor paste of 10k Ω/□ described in comparative example 6 in a ratio of 1:4 by weight ratio.
Comparative example 12
A comparative example of the thick-film resistor paste of the present invention, which is prepared by mixing the 10k Ω/□ thick-film resistor paste of comparative example 6 and the 100k Ω/□ thick-film resistor paste of comparative example 7:3 by weight ratio.
Comparative example 13
A comparative example of the thick-film resistor paste of the present invention, which is prepared by mixing the thick-film resistor paste of 100k Ω/□ described in comparative example 7 and the thick-film resistor paste of 1Mk Ω/□ described in comparative example 8 in a ratio of 1:4 by weight ratio.
Comparative example 14
A comparative example of the thick-film resistor paste of the present invention, which is prepared by mixing the thick-film resistor paste of 1M Ω/□ described in comparative example 8 and the thick-film resistor paste of 10Mk Ω/□ described in comparative example 9 in a ratio of 1:9 by weight ratio. Example 62
The thick film resistor pastes according to the examples and comparative examples were formed into resistors and tested for the square resistance value, cold resistance temperature coefficient value (CTCR), hot resistance temperature coefficient value (HTCR), temperature coefficient width of resistance (TCR width ═ HTCR-CTCR), ESD, wherein the 0.1 Ω and 1 Ω resistance values were tested in a 300-square pattern, and the other resistance values were tested in a 1-square pattern, with each square size being 0.5mm x 0.5mm, and 30 samples were taken for each test group and tested, and the average value was taken, wherein,
Figure BDA0002187934840000281
R-55℃、R25℃、R155℃respectively, the resistance values were measured at-55 deg.C, 25 deg.C and 155 deg.C. The test conditions of the ESD were: size 0.5mm, resistance was discharged at + -3kV, 3 times at 3kV respectively, then 3 times at-3 kV, with 1s interval between each time, and resistance values before and after the test were recorded. The results of testing resistors made from the thick film resistor pastes described in the examples and comparative examples are shown in table 1.
Table 1 testing of resistors made from thick film resistor pastes as described in examples and comparative examples
Figure BDA0002187934840000282
Figure BDA0002187934840000291
As can be seen from table 1, in examples 46 to 61, the prepared resistors TCR are relatively stable by using the thick film resistor paste formed by mixing the two thick film resistor pastes with adjacent resistances, and the ESD is between the thick film resistor pastes with adjacent resistances, which means that the electrical property of the paste obtained by mixing the adjacent resistances of the thick film resistor paste is between the thick film resistor pastes with adjacent resistances.
Testing the Ag, Pd and RuO of the thick film resistor paste of comparative examples 1-32Waiting for the content of the noble metal, and testing the square resistance value, TCR and ESD performance of the thick film resistor slurry of 1-9 at different temperatures; the thick film resistor pastes described in comparative example 10 and example 52, comparative example 11 and example 55, comparative example 12 and example 57, comparative example 13 and example 58, and comparative example 14 and example 60 were tested for square resistance, TCR, and ESD performance at different temperatures, and the results are shown in tables 2 and 3.
TABLE 2 Performance testing of thick film resistor pastes described in comparative examples 1 to 9
Figure BDA0002187934840000292
Figure BDA0002187934840000301
Table 3 comparative testing of mixing Properties of thick film resistor pastes described in comparative and examples
Figure BDA0002187934840000302
As can be seen from Table 2, for the low-resistance grade, under the condition of approximately same performance, the noble metal content of the formula is lower, so the cost is low, and the cost performance is higher; high resistance grade, and the performance is superior to that of the commercial product. In table 3, as can be seen from the comparison of comparative example 10 and example 52, comparative example 11 and example 55, comparative example 12 and example 57, comparative example 13 and example 58, and comparative example 14 and example 60, the resistance obtained by mixing the adjacent resistances of the thick film resistance paste according to the present invention has better electrical properties, lower resistance change rate, more stable temperature sensitivity and TCR, less EDS, and better performance than the commercial products in all aspects, compared to the resistance obtained by mixing the adjacent resistances of the commercial resistance paste.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims (7)

1. The thick film resistor paste with the resistance range of 1M omega/□ -10M omega/□ is characterized in that the resistor paste is prepared from thick film resistor paste with the resistance of 1M omega/□ and thick film resistor paste with the resistance of 10M omega/□;
the thick film resistor paste with the resistance value of 1M omega/□ and the thick film resistor paste with the resistance value of 10M omega/□ comprise solid phase components and organic phase components, wherein the weight ratio of the solid phase components to the organic phase components is as follows: solid phase components: 35-75: 25-65 parts of organic phase component;
the thick-film resistor paste with the resistance value of 1M omega/□ comprises at least one of a solid-phase component o and a solid-phase component p;
the solid phase component o comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O618-50% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, the weight percentage of the glass composition C is 10-20%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component p comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O618-50%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 30-60%, and the weight percentage of the glass composition C is 10-20%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component p, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4In weight percent ofThe amount is 0-13%;
the thick film resistor paste with the resistance value of 10M omega/□ comprises at least one of a solid phase component q and a solid phase component r;
the solid phase component q comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O610-40% of glass composition and 50-80% of glass composition; the glass composition comprises glass composition A, glass composition B, glass composition C, and glass composition D; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 40-60%, the weight percentage of the glass composition C is 10-20%, and the weight percentage of the glass composition D is 1-20%;
the solid phase component r comprises the following components in percentage by weight: RuO2 0～5％、Pb2Ru2O610-40%, 50-80% of glass composition and 0.1-32% of inorganic filler; the glass composition comprises glass composition A, glass composition B and glass composition C; in the glass composition, the weight percentage of the glass composition A is 10-40%, the weight percentage of the glass composition B is 40-60%, and the weight percentage of the glass composition C is 10-20%; the inorganic filler contains CuO and MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of; in the solid phase component r, the weight percentage of CuO is 0-3%, and MnO is20-3 wt% of Nb2O50-3% by weight of SiO20-2% by weight of Ta2O50-5 wt% of TiO2In an amount of 0 to 1% by weight, ZrO20-2% by weight of ZrSiO4The weight percentage content of the compound is 0-13%;
the glass composition A comprises the following components in percentage by weight: 10-50% of PbO and SiO2 35～55％、CaO 5～30％、Al2O3 1～20％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、CaO、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition A is at least 95%;
the glass composition B comprises the following components in percentage by weight: SiO 22 40～75％、BaO 0～15％、SrO 0～20％、Na2O 0～10％、K2O 0～10％、Al2O3 1～15％、B2O31-25% and ZnO 0-10%, the SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3And the sum of the weight percentages of ZnO in the glass composition B is at least 95%;
the glass composition C comprises the following components in percentage by weight: 50-88% of PbO and SiO210～30％、Al2O31～10％、B2O31-10% of ZnO and 0-10% of PbO and SiO2、Al2O3、B2O3And the sum of the weight percentages of ZnO in glass composition C is at least 95%;
the glass composition D comprises the following components in percentage by weight: 60-88% of PbO and SiO2 10～35％、Al2O31～10％、B2O31-10% and 0-20% of transition metal oxide, wherein the transition metal oxide comprises CuO and MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of (1).
2. The thick film resistor paste of claim 1 having a resistivity in the range of 1 MOmega/□ -10 MOmega/□, wherein the transition metal oxide is present in the glass composition D in an amount of 0-15% by weight.
3. The thick film resistor paste of claim 1 having a resistance value in the range of 1 Μ Ω/□ -10 Μ Ω/□, wherein the weight ratio of the solid phase component to the organic phase component is: solid phase components: organic phase components of 50-70: 30 to 50.
4. The thick film resistor paste of claim 1 having a resistance value ranging from 1M Ω/□ to 10M Ω/□, wherein the organic phase component comprises a resin and a solvent, and the weight percentage of the resin in the organic phase component is 0 to 20% and is not 0.
5. The thick film resistor paste of claim 4 having a resistance value in the range of 1 MOmega/□ -10 MOmega/□, wherein said resin is at least one of methyl cellulose, ethyl cellulose, acrylic resin and epoxy resin.
6. The thick film resistor paste of claim 4 having a resistance value ranging from 1M Ω/□ to 10M Ω/□, wherein the solvent is at least one of terpineol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate, and dioctyl phthalate.
7. The method for preparing the thick-film resistor paste with the resistance range of 1M omega/□ -10M omega/□ according to any one of claims 1-6, wherein the thick-film resistor paste with the resistance range of 1M omega/□ -10M omega/□ is formed by mixing the thick-film resistor paste with the resistance range of 1M omega/□ and the thick-film resistor paste with the resistance range of 10M omega/□.
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CN111739675B (en) * 2020-06-19 2021-03-05 潮州三环（集团）股份有限公司 Thick film resistor paste
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CN112086254B (en) * 2020-08-12 2021-12-21 西安宏星电子浆料科技股份有限公司 Environment-friendly thick-film resistor paste
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Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974304A (en) * 1975-03-03 1976-08-10 General Electric Company Method of making a voltage responsive switch
JPS55140201A (en) * 1979-04-19 1980-11-01 Hitachi Ltd Composition for thick film thermistor
US4539223A (en) * 1984-12-19 1985-09-03 E. I. Du Pont De Nemours And Company Thick film resistor compositions
CN86108011B (en) * 1986-11-15 1988-10-26 国营宏明无线电器材厂 Linear thick-film negative temp. coefficient thermistor
US4961999A (en) * 1988-07-21 1990-10-09 E. I. Du Pont De Nemours And Company Thermistor composition
JP2777206B2 (en) * 1989-07-20 1998-07-16 住友金属鉱山株式会社 Manufacturing method of thick film resistor
JP2970713B2 (en) * 1991-12-25 1999-11-02 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Thick film resistor composition
JP3253121B2 (en) * 1992-03-30 2002-02-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Thick film resistor composition
EP0628974A2 (en) * 1993-06-07 1994-12-14 E.I. Du Pont De Nemours & Company Incorporated Thick film resistor composition
US5491118A (en) * 1994-12-20 1996-02-13 E. I. Du Pont De Nemours And Company Cadmium-free and lead-free thick film paste composition
JPH09162016A (en) * 1995-12-12 1997-06-20 Matsushita Electric Ind Co Ltd Zinc oxide varistor, manufacture thereof and crystalline glass composition for coating use which is used for that
JPH11195505A (en) * 1997-12-26 1999-07-21 E I Du Pont De Nemours & Co Thick-film resistor and manufacture thereof
KR100369565B1 (en) * 1999-12-17 2003-01-29 대주정밀화학 주식회사 Resistive paste composition for the formation of electrically heat-generating layer
JP4722318B2 (en) * 2000-06-05 2011-07-13 ローム株式会社 Chip resistor
US6860000B2 (en) * 2002-02-15 2005-03-01 E.I. Du Pont De Nemours And Company Method to embed thick film components
US20040113127A1 (en) * 2002-12-17 2004-06-17 Min Gary Yonggang Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto
CN1744238A (en) * 2004-09-01 2006-03-08 Tdk株式会社 Glass composition for thick film resistor paste, thick film resistor paste, thick-film resistor, and electronic device
TW200639880A (en) * 2005-02-21 2006-11-16 Tdk Corp Thick-film resistor and its production process
JP5406277B2 (en) * 2008-04-18 2014-02-05 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Resistor composition using Cu-containing glass frit
US8628695B2 (en) * 2008-04-18 2014-01-14 E I Du Pont De Nemours And Company Surface-modified ruthenium oxide conductive material, lead-free glass(es), thick film resistor paste(s), and devices made therefrom
CN101727997A (en) * 2008-10-23 2010-06-09 银锐明 YBCO thick film resistor slurry
CN101800101A (en) * 2009-04-30 2010-08-11 中国振华集团云科电子有限公司 Manufacturing method of positive temperature coefficient chip resistor
WO2012176696A1 (en) * 2011-06-21 2012-12-27 住友金属鉱山株式会社 Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element
CN104464991B (en) * 2013-09-12 2017-06-06 中国振华集团云科电子有限公司 A kind of preparation method of linear semistor slurry
CN103971866B (en) * 2014-05-20 2017-04-12 立昌先进科技股份有限公司 Rheostat with filtration structure
CN105321642B (en) * 2014-07-31 2017-12-08 中国振华集团云科电子有限公司 A kind of preparation method of high TCR low square resistances LINEAR N TC resistance slurries
CN107293352B (en) * 2014-09-12 2019-06-14 昭荣化学工业株式会社 Thick-film resistor body and its manufacturing method
MY183351A (en) * 2014-09-12 2021-02-18 Shoei Chemical Ind Co Resistive composition
JP6642786B2 (en) * 2015-04-07 2020-02-12 日本電気硝子株式会社 Composite powder material
CN104916345B (en) * 2015-05-25 2017-06-13 电子科技大学 A kind of thick-film resistor paste and preparation method thereof
CN105741903B (en) * 2016-05-06 2017-04-05 西安电子科技大学 A kind of preparation method of the modified ruthenic oxide thick-film resistor paste of Ag doping
CN105976894A (en) * 2016-07-27 2016-09-28 东莞珂洛赫慕电子材料科技有限公司 Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof
CN106328251A (en) * 2016-08-18 2017-01-11 陆川县华鑫电子厂 Thick film resistor paste and preparation method thereof
CN106710758B (en) * 2017-01-17 2019-01-22 中国振华集团云科电子有限公司 A kind of preparation method of the linear negative temperature coefficient thermistor of thick film sheet type
CN107731340B (en) * 2017-08-31 2019-06-07 潮州三环（集团）股份有限公司 A kind of thick-film resistor paste conductive paste material

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