CN101800101A - Manufacturing method of positive temperature coefficient chip resistor - Google Patents

Abstract

The invention discloses a manufacturing method of a positive temperature coefficient chip resistor, which belongs to the field of chip resistor manufacturing methods; and the invention aims to provide a manufacturing method of a position temperature coefficient resistor with small temperature coefficient offset. The manufacturing method comprises surface and back electrode and resistor manufacturing, envelopment, resistance adjustment, splitting, burning, end coating and electroplating; the specific method comprises the following steps: surface and back electrode printing, electrode sintering, resistor printing, resistor sintering, primary glass printing, primary glass sintering, laser resistance adjustment, secondary glass printing, primary splitting, electrode end coating, end electrode sintering, secondary splitting, nickel plating and plated tin-lead alloy. The resistor manufactured through the method has small temperature coefficient offset, high precision, low cost and above 95 percent pass rate; and therefore, the manufacturing method is an ideal method for manufacturing the positive temperature coefficient chip resistor.

Description

The manufacture method of positive temperature coefficient chip resistor

Technical field:

The present invention relates to a kind of manufacture method of resistor, relate in particular to a kind of resistor manufacture method with fuse protection function.

Background technology:

PTC resistor is called for short PTC, and it is the resistive element that adopts semiconductive ceramic technology to make.Its characteristic is in the positive temperature coefficient scope, and when the electric current that flows through resistance increased, electrical power increased thereupon, and temperature rises high thereupon, and resistance increases, thereby causes that electric current reduces, and electrical power reduces.The temperature rise that causes when electrical power is during with the heat radiation balance, and temperature, resistance all no longer change.This automatic control function of PTC is usually used in Current Control, temperature control of electronic equipment etc.Along with development of electronic technology, electronic equipment has proposed more and more higher requirement to PTC resistor, the positive temperature coefficient chip resistor that adopts the conventional method manufacturing at present can not satisfy accurate day by day electronic equipment requirement because of its temperature coefficient offset amount is big, precision is lower.

Summary of the invention:

At the above-mentioned defective that exists in the prior art, the present invention aims to provide the manufacture method of the little positive temperature coefficient chip resistor of a kind of temperature coefficient offset amount.

To achieve these goals, the technical solution used in the present invention comprises that the making of table electrode, back electrode making, resistive element making, laser resistor trimming, glass encapsulating, sintering, sliver, end are coated with, electroplate; It is characterized in that concrete grammar is as follows:

1) according to a conventional method at ceramic substrate surface printing table electrode, guarantee to reach 15～25 μ after the print thickness drying, and the maximum of table electrode film and poor≤5 μ of minimum value;

2) according to a conventional method at ceramic substrate back up back electrode, guarantee to reach 10～20 μ after the print thickness drying, and the maximum of back electrode film and minimum value poor≤5 μ;

3) will be printed with 850 ± 2 ℃ of sintering 8～12min of ceramic substrate that show electrode, back electrode;

4) the ceramic substrate surface printing resistive element behind sintering guarantees to reach 15～25 μ after the print thickness drying, and the maximum of resistive film and minimum value poor≤5 μ; Resistance slurry is b by weight by high value slurry and low resistance slurry: mixed (1-b) forms:

$b=\frac{\lg \frac{R_S\×K}{R_L\×N}}{\lg \frac{R_H}{R}}$

In the formula: R _SBe target resistance, R _LBe the resistance of low-resistance side, R _HBe the resistance of high resistant side, N is a number formulary, and K is 0.6～1 preparation coefficient; Wherein, high value slurry, the low resistance slurry slurry preparation of PTC resistor routinely;

5) will be printed with 850 ± 2 ℃ of sintering 8～12min of ceramic substrate of resistive element;

6) print glass according to a conventional method one time on the surface of resistive element, guarantee to reach 15～25 μ after the print thickness drying, and the maximum ga(u)ge of a glass-film and minimum thickness poor≤5 μ;

7) will be printed with 600 ± 2 ℃ of sintering 5～9min of ceramic substrate of a glass-film;

8) according to a conventional method resistive element is carried out laser resistor trimming, make its resistance reach required target resistance and precision;

9) according to a conventional method in vitreous surface printing secondary glass, guarantee to reach 30～70 μ after the print thickness drying, and the maximum ga(u)ge of secondary glass film and minimum thickness poor≤5 μ;

10) ceramic substrate that will be printed with secondary glass film sliver according to a conventional method, and, guarantee that brushing thickness is 0.1～0.3mm, drying at the end coating termination electrode of sliver bar;

11) will be coated with 600 ± 2 ℃ of sintering 5～9min of sliver bar that are brushed with the termination electrode film;

12) secondary sliver, nickel plating, tin-lead plating according to a conventional method.

Compared with the prior art, the present invention makes full use of the chip thick-film resistor manufacture method of comparative maturity owing to adopt the material technique scheme, therefore can reduce the product temperature coefficient skew, improve the product precision, reduce cost; The positive temperature coefficient chip resistor qualification rate that this method is made is more than 95%.

Embodiment:

The invention will be further described below in conjunction with specific embodiment:

1) according to a conventional method at ceramic substrate surface printing table electrode, 125 ℃ of dry 10min; Guarantee to reach 15～25 μ after the print thickness drying, and the maximum of table electrode film and poor≤5 μ of minimum value;

2) according to a conventional method at ceramic substrate back up back electrode, 125 ℃ of dry 10min; Guarantee to reach 10～20 μ after the print thickness drying, and the maximum of back electrode film and minimum value poor≤5 μ;

3) will be printed with 850 ± 2 ℃ of sintering 8～12min of ceramic substrate that show electrode film and back electrode film;

4) the ceramic substrate surface printing resistive element behind sintering, 125 ℃ of dry 10min; Guarantee to reach 15～25 μ after the print thickness drying, and the maximum of resistive film and minimum value poor≤5 μ; Resistance slurry is b by weight by high value slurry and low resistance slurry: mixed (1-b) forms:

$b=\frac{\lg \frac{R_S\×K}{R_L\×N}}{\lg \frac{R_H}{R}}$

In the formula: R _SBe target resistance, R _LBe the resistance of low-resistance side, R _HBe the resistance of high resistant side, N is a number formulary, and K is 0.6～1 preparation coefficient; Wherein, high value slurry, the low resistance slurry slurry preparation of PTC resistor routinely;

5) will be printed with 850 ± 2 ℃ of sintering 8～12min of ceramic substrate of resistive film;

6) print glass according to a conventional method one time on the surface of resistive element, 125 ℃ of dry 10min; Guarantee to reach 15～25 μ after the print thickness drying, and the maximum ga(u)ge of a glass-film and minimum thickness poor≤5 μ;

7) will be printed with 600 ± 2 ℃ of sintering 5～9min of ceramic substrate of a glass-film;

8) according to a conventional method resistive element is carried out laser resistor trimming, make its resistance reach required target resistance and precision;

9) according to a conventional method in Vitrea surface printing secondary glass once, 125 ℃ of dry 10min; Guarantee to reach 30～70 μ after the print thickness drying, and the maximum ga(u)ge of secondary glass film and minimum thickness poor≤5 μ;

10) ceramic substrate that will be printed with secondary glass film sliver according to a conventional method, and, guarantee that brushing thickness is 0.1～0.3mm, 25 ℃ of dry 10min at sliver bar end coating brushing termination electrode;

11) will be coated with 600 ± 2 ℃ of sintering 5～9min of sliver bar that are brushed with the termination electrode film;

12) secondary sliver, nickel plating, tin-lead plating according to a conventional method.

In above-mentioned steps, the electrode slurry of printing table electrode, back electrode, termination electrode, and all slurry compound method of thick-film resistor preparations routinely of slurry of printing glass, secondary glass.

Claims (1)

1. the manufacture method of a positive temperature coefficient chip resistor comprises that the making of table electrode, back electrode making, resistive element making, laser resistor trimming, glass encapsulating, sintering, sliver, end are coated with, electroplate; It is characterized in that concrete grammar is as follows:

1) according to a conventional method at ceramic substrate surface printing table electrode, guarantee to reach 15～25 μ after the print thickness drying, and the maximum of table electrode film and poor≤5 μ of minimum value;

2) according to a conventional method at ceramic substrate back up back electrode, guarantee to reach 10～20 μ after the print thickness drying, and the maximum of back electrode film and minimum value poor≤5 μ;

3) will be printed with 850 ± 2 ℃ of sintering 8～12min of ceramic substrate that show electrode, back electrode;

4) the ceramic substrate surface printing resistive element behind sintering guarantees to reach 15～25 μ after the print thickness drying, and the maximum of resistive film and minimum value poor≤5 μ; Resistance slurry is b by weight by high value slurry and low resistance slurry: mixed (1-b) forms:

$b=\frac{\lg \frac{R_S\×K}{R_L\×N}}{\lg \frac{R_H}{R}}$

In the formula: R _SBe target resistance, R _LBe the resistance of low-resistance side, R _HBe the resistance of high resistant side, N is a number formulary, and K is 0.6～1 preparation coefficient; Wherein, high value slurry, the low resistance slurry slurry preparation of PTC resistor routinely;

5) will be printed with 850 ± 2 ℃ of sintering 8～12min of ceramic substrate of resistive element;

6) print glass according to a conventional method one time on the surface of resistive element, guarantee to reach 15～25 μ after the print thickness drying, and the maximum ga(u)ge of a glass-film and minimum thickness poor≤5 μ;

7) will be printed with 600 ± 2 ℃ of sintering 5～9min of ceramic substrate of a glass-film;

8) according to a conventional method resistive element is carried out laser resistor trimming, make its resistance reach required target resistance and precision;

9) according to a conventional method in vitreous surface printing secondary glass, guarantee to reach 30～70 μ after the print thickness drying, and the maximum ga(u)ge of secondary glass film and minimum thickness poor≤5 μ;

10) ceramic substrate that will be printed with secondary glass film sliver according to a conventional method, and, guarantee that brushing thickness is 0.1～0.3mm, drying at the end coating termination electrode of sliver bar;

11) will be coated with 600 ± 2 ℃ of sintering 5～9min of sliver bar that are brushed with the termination electrode film;

12) secondary sliver, nickel plating, tin-lead plating according to a conventional method.