CN110504075A - A kind of Standard resistance range is 10k Ω/ ~ 100k Ω/ thick-film resistor paste and preparation method thereof - Google Patents

A kind of Standard resistance range is 10k Ω/ ~ 100k Ω/ thick-film resistor paste and preparation method thereof Download PDF

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Publication number
CN110504075A
CN110504075A CN201910830322.1A CN201910830322A CN110504075A CN 110504075 A CN110504075 A CN 110504075A CN 201910830322 A CN201910830322 A CN 201910830322A CN 110504075 A CN110504075 A CN 110504075A
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glass composition
weight percentage
thick
component
film resistor
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CN110504075B (en
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邱基华
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Chaozhou Three Circle Group Co Ltd
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Chaozhou Three Circle Group Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Glass Compositions (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

The present invention is the divisional application based on " a kind of thick-film resistor paste of CN2017000998988 ", it is 10k Ω/~100k Ω/ thick-film resistor paste the invention discloses a kind of Standard resistance range, after using thick-film resistor paste and the resistance value of 10k Ω/ to mix for the thick-film resistor paste of 100k Ω/ with arbitrary proportion, the electrical property of obtained resistance slurry will not all deteriorate, with good mixed performance, and the mixed proportion by adjusting adjacent resistance value shelves, any resistance value between adjacent two grades of resistance values can be obtained, it does not need to prepare intermediate resistance value shelves again, reduce manufacturing cost.The invention also discloses the preparation methods that a kind of Standard resistance range is 10k Ω/~100k Ω/ thick-film resistor paste.

Description

A kind of Standard resistance range be 10k Ω/~100k Ω/ thick-film resistor paste and its Preparation method
Technical field
The present invention is the divisional application based on " a kind of thick-film resistor paste of CN2017000998988 ", is related to a kind of resistance Slurry, and in particular to a kind of Standard resistance range is 10k Ω/~100k Ω/ thick-film resistor paste and preparation method thereof.
Background technique
Raw material of the thick-film resistor paste as production plate resistor, it is desirable that slurry has wider Standard resistance range, can be full 0.1 Ω of foot production~10M Ω resistance value piece resistance demand.Existing resistance slurry is divided by resistance value, and every 1 order of magnitude is one grade, By mixing the adjacent resistance value shelves of different proportion, to obtain target resistance value.
Thick-film resistor paste is in the problem of production process of plate resistor at present:
1) electrical property (EDS, dimensional effect) can deteriorate after certain resistance value shelves mixing, and to meet the performance requirement of piece resistance, The process conditions requirement for mixing the processing of the road Hou Duihou is more harsh, such as at 820~880 DEG C, TCR (the resistance temperature of adjacent resistance value shelves Degree coefficient) it can be maintained at ± 100ppm, and after mixing, TCR can be even up to 400ppm beyond 100ppm under similarity condition；
2) certain adjacent resistance value shelves can not obtain good resistance value curve after directly mixing, so often there is centre Resistance value shelves, this will lead to the increase of cost.
The reason of causing the above problem to occur, is: since there are the difference of the order of magnitude, every liter of resistance values for adjacent resistance value shelves resistance value High an order of magnitude generally can all use following methods: 1, reducing content of the high powder of conductivity in system；2, using electricity The lower conductive phase of conductance or the ratio table for reducing conductive phase；3, in reduction system total conductive phase content, improve amount of glass；4, increase Add the content that the glass of resistance value can be improved in component；Guarantee electrical property, the proportion of conductive phase, glass phase, the ingredient of glass phase It must guarantee in a certain range, and adjacent two grades of conductive phases, glass phases differ greatly, so can band incoming call when mixing The deterioration of performance.
Summary of the invention
It is provided a kind of with good mixed performance it is an object of the invention to overcome the shortcomings of the prior art place Thick-film resistor paste.
To achieve the above object, the technical scheme adopted by the invention is as follows: a kind of thick-film resistor paste, include glass combination Object；
The glass composition includes in glass composition A, glass composition B, glass composition C and glass composition D At least two；
The glass composition A includes the component of following weight percentage: PbO 10~50%, SiO235~55%, CaO 5~30%, Al2O31~20%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、CaO、Al2O3、B2O3 It is at least 95% with the sum of weight percentage of the ZnO in glass composition A；
The glass composition B includes the component of following weight percentage: SiO240~75%, BaO 0~15%, SrO 0~20%, Na2O 0~10%, K2O 0~10%, Al2O31~15%, B2O31~25% and ZnO 0~10%, institute State SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3It is at least with the sum of weight percentage of the ZnO in glass composition B 95%；
The glass composition C includes the component of following weight percentage: PbO 50~88%, SiO210~30%, Al2O31~10%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、Al2O3、B2O3With ZnO in glass composition C In the sum of weight percentage be at least 95%；
The glass composition D includes the component of following weight percentage: PbO 60~88%, SiO210~35%, Al2O31~10%, B2O31~10% and transition metal oxide 0~20%, the transition metal oxide include CuO, MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of.
Good performance can not be obtained when glass composition A is used alone under normal conditions, glass composition need to be cooperated B, at least one of glass composition C could obtain good electrical property and wider array of technique and use window.Glass composition The TCR of the system of the controllable thick-film resistor paste of the addition of D.
Preferably, in glass composition D, the weight percentage of the transition metal oxide is 0~15%, too much It will lead to that form glass unstable, being easy crystallization simultaneously causes resistance endurance quality to decline.
It is 0.1 Ω/~1 Ω/ thick-film resistor paste the present invention also provides a kind of Standard resistance range, the resistance slurry Material is 0.1 Ω/ thick-film resistor paste by resistance value and resistance value is that 1 Ω/ thick-film resistor paste is made；
The resistance value is 0.1 Ω/ thick-film resistor paste and resistance value is that 1 Ω/ thick-film resistor paste includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；
The resistance value be 0.1 Ω/ resistance slurry solid-phase component include solid-phase component a and solid-phase component b in extremely Few one kind；
The solid-phase component a includes the component of following weight percentage: Ag 20~60%, Pd 5~65%, RuO2 0 ~20% and glass composition 5~30%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 5~20%, institute The weight percentage for stating glass composition B is 20~50%, the weight percentage of the glass composition C is 30~ The weight percentage of 70%, the glass composition D are 1~20%；
The solid-phase component b includes the component of following weight percentage: Ag 20~60%, Pd 5~65%, RuO2 0 ~20%, glass composition 5~30% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 5~ The weight percentage of 20%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 30~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component b, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The resistance value is that 1 Ω/ thick-film resistor paste includes at least one of solid-phase component c and solid-phase component d；
The solid-phase component c includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO2 0 ~20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, The weight percentage of the glass composition B is 0~30%, the weight percentage of the glass composition C is 30~ The weight percentage of 70%, the glass composition D are 1~20%；
The solid-phase component d includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO2 0 ~20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2's Weight percentage is 0~2%, ZrSiO4Weight percentage be 0~13%.
It uses above-mentioned 0.1 Ω/ thick-film resistor paste and resistance value is 1 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.
Pass through the glass phase that control 0.1 Ω/ thick-film resistor paste and resistance value are in 1 Ω/ thick-film resistor paste With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.Solvent Terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate can be selected from And dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 0.1 Ω/~1 Ω/ thick-film resistor paste Method, the Standard resistance range are that 0.1 Ω/~1 Ω/ thick-film resistor paste uses resistance value for 0.1 Ω/ thick-film resistor Slurry and resistance value are that 1 Ω/ thick-film resistor paste mixes.
It is 1 Ω/~10 Ω/ thick-film resistor paste the present invention also provides a kind of Standard resistance range, the resistance slurry Material is 1 Ω/ thick-film resistor paste by resistance value and resistance value is that 10 Ω/ thick-film resistor paste is made；
The resistance value be 1 Ω/ thick-film resistor paste and resistance value be 10 Ω/ thick-film resistor paste include solid phase at Point and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35~ 75:25~65；
The resistance value is that 1 Ω/ thick-film resistor paste includes at least one of solid-phase component c and solid-phase component d；
The solid-phase component c includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO2 0 ~20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, The weight percentage of the glass composition B is 0~30%, the weight percentage of the glass composition C is 30~ The weight percentage of 70%, the glass composition D are 1~20%；
The solid-phase component d includes the component of following weight percentage: Ag 20~50%, Pd 5~50%, RuO2 0 ~20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2's Weight percentage is 0~2%, ZrSiO4Weight percentage be 0~13%；
The solid-phase component e includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO2 20~50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass group Close object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is The weight percentage of 20~60%, the glass composition D are 1~20%；
The solid-phase component f includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO2 20~50%, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition include glass composition A, Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10 The weight percentage of~40%, the glass composition B are 10~40%, the weight percentage of the glass composition C It is 20~60%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5's Weight percentage is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
It uses above-mentioned 1 Ω/ thick-film resistor paste and resistance value is that 10 Ω/ thick-film resistor paste is mixed with arbitrary proportion After conjunction, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value shelves Mixed proportion, any resistance value between adjacent two grades of resistance values can be obtained, do not need to prepare intermediate resistance value shelves again, reduce production Manufacturing cost.
By control 1 Ω/ thick-film resistor paste and resistance value be 10 Ω/ thick-film resistor paste in glass phase and The glass phase constituent of conductive phase so that glass phase each component can control in a certain range after mixing, while controlling conductive phase Variation ratio, avoid adjacent two grades of conductive phases biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.Solvent Terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate can be selected from And dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
It is the preparation method of 1 Ω/~10 Ω/ thick-film resistor paste the present invention also provides above-mentioned Standard resistance range, The Standard resistance range is that 1 Ω/~10 Ω/ thick-film resistor paste uses resistance value for 1 Ω/ thick-film resistor paste and resistance Value is that 10 Ω/ thick-film resistor paste mixes.
It is 10 Ω/~100 Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is 10 Ω/ thick-film resistor paste by resistance value and resistance value is that 100 Ω/ thick-film resistor paste is made；
The resistance value is 10 Ω/ thick-film resistor paste and resistance value is that 100 Ω/ thick-film resistor paste includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；
The resistance value is that 10 Ω/ thick-film resistor paste includes at least one of solid-phase component e and solid-phase component f；
The solid-phase component e includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO2 20~50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass group Close object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is The weight percentage of 20~60%, the glass composition D are 1~20%；
The solid-phase component f includes the component of following weight percentage: Ag 10~40%, Pd 0~20%, RuO2 20~50%, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition include glass composition A, Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10 The weight percentage of~40%, the glass composition B are 10~40%, the weight percentage of the glass composition C It is 20~60%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5's Weight percentage is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The resistance value is that 100 Ω/ thick-film resistor paste includes at least one of solid-phase component g and solid-phase component h；
The solid-phase component g includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO2 20 ~50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 20~50%, the weight percentage of the glass composition C is 10~ The weight percentage of 40%, the glass composition D are 1~20%；
The solid-phase component h includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO2 20 ~50%, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
It uses above-mentioned 10 Ω/ thick-film resistor paste and resistance value is 100 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.
Pass through the glass phase that control 10 Ω/ thick-film resistor paste and resistance value are in 100 Ω/ thick-film resistor paste With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 10 Ω/~100 Ω/ thick-film resistor paste Method, the Standard resistance range are that 10 Ω/~100 Ω/ thick-film resistor paste uses resistance value for 10 Ω/ thick-film resistor Slurry and resistance value are that 100 Ω/ thick-film resistor paste mixes.
It is 100 Ω/~1k Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range The thick-film resistor paste that slurry is 100 Ω/ thick-film resistor paste by resistance value and resistance value is 1k Ω/ is made；
The thick-film resistor paste that the resistance value is 100 Ω/ thick-film resistor paste and resistance value is 1k Ω/ includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；
The resistance value is that 100 Ω/ thick-film resistor paste includes at least one of solid-phase component g and solid-phase component h；
The solid-phase component g includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO2 20 ~50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 20~50%, the weight percentage of the glass composition C is 10~ The weight percentage of 40%, the glass composition D are 1~20%；
The solid-phase component h includes the component of following weight percentage: Ag 0~20%, Pd 0~10%, RuO2 20 ~50%, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The solid-phase component i includes the component of following weight percentage: RuO25~30%, Pb2Ru2O60~30% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component j includes the component of following weight percentage: RuO25~30%, Pb2Ru2O60~30%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 10~50%, the weight percentage of the glass composition C is 15~ 50%；The inorganic filler includes CuO, MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component j, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~ 13%.
It uses above-mentioned 100 Ω/ thick-film resistor paste and resistance value is the thick-film resistor paste of 1k Ω/ with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.
Pass through the glass phase that control 100 Ω/ thick-film resistor paste and resistance value are in the thick-film resistor paste of 1k Ω/ With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 100 Ω/~1k Ω/ thick-film resistor paste Method, the Standard resistance range are that 100 Ω/~1k Ω/ thick-film resistor paste uses resistance value for 100 Ω/ thick film electricity The thick-film resistor paste that resistance paste and resistance value are 1k Ω/ mixes.
It is 1k Ω/~10k Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 1k Ω/ and resistance value are 10k Ω/；
The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 1k Ω/ are 10k Ω/ includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；
The thick-film resistor paste that the resistance value is 1k Ω/ includes at least one of solid-phase component i and solid-phase component j；
The solid-phase component i includes the component of following weight percentage: RuO25~30%, Pb2Ru2O60~30% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component j includes the component of following weight percentage: RuO25~30%, Pb2Ru2O60~30%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 10~50%, the weight percentage of the glass composition C is 15~ 50%；The inorganic filler includes CuO, MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component j, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~ 13%；
The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；
The solid-phase component k includes the component of following weight percentage: RuO20~20%, Pb2Ru2O610~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage: RuO20~20%, Pb2Ru2O610~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~ The weight percentage of 50%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component l, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage It is 0~13%.
It uses the thick-film resistor paste of above-mentioned 1k Ω/ and resistance value is the thick-film resistor paste of 10k Ω/ with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.
By controlling thick-film resistor paste and the resistance value of 1k Ω/ as the glass phase in the thick-film resistor paste of 10k Ω/ With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 1k Ω/~10k Ω/ thick-film resistor paste Method, the Standard resistance range are that 1k Ω/~10k Ω/ thick-film resistor paste uses resistance value for the thick-film resistor of 1k Ω/ The thick-film resistor paste that slurry and resistance value are 10k Ω/ mixes.
It is 10k Ω/~100k Ω/ thick-film resistor paste, the electricity the present invention also provides a kind of Standard resistance range Resistance paste is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 10k Ω/ and resistance value are 100k Ω/；
The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 10k Ω/ are 100k Ω/ includes solid Phase constituent and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent= 35~75:25~65；
The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；
The solid-phase component k includes the component of following weight percentage: RuO20~20%, Pb2Ru2O610~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage: RuO20~20%, Pb2Ru2O610~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~ The weight percentage of 50%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component l, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage It is 0~13%；
The resistance value is that the thick-film resistor paste of 100k Ω/ includes at least one in solid-phase component m and solid-phase component n Kind；
The solid-phase component m includes the component of following weight percentage: RuO20~10%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage: RuO20~10%, Pb2Ru2O618~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 30~60%, and the weight percentage of the glass composition C is 10~30%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component n, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage It is 0~13%.
It uses the thick-film resistor paste of above-mentioned 10k Ω/ and resistance value is the thick-film resistor paste of 100k Ω/ arbitrarily to compare After example mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance It is worth the mixed proportion of shelves, any resistance value between adjacent two grades of resistance values can be obtained, do not need to prepare intermediate resistance value shelves again, reduce Manufacturing cost.
By controlling thick-film resistor paste and the resistance value of 10k Ω/ as the glass in the thick-film resistor paste of 100k Ω/ Mutually with the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while control is led The variation ratio of electric phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the systems that a kind of above-mentioned Standard resistance range is 10k Ω/~100k Ω/ thick-film resistor paste Preparation Method, the Standard resistance range are that 10k Ω/~100k Ω/ thick-film resistor paste uses resistance value for the thickness of 10k Ω/ The thick-film resistor paste that film resistance slurry and resistance value are 100k Ω/ mixes.
It is 100k Ω/~1M Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 100k Ω/ and resistance value are 1M Ω/；
The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 100k Ω/ are 1M Ω/ includes solid Phase constituent and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent= 35~75:25~65；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component m and solid-phase component n；
The solid-phase component m includes the component of following weight percentage: RuO20~10%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage: RuO20~10%, Pb2Ru2O618~ 50%, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~ The weight percentage of 40%, the glass composition B are 30~60%, and the weight percentage of the glass composition C is 10~30%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component n, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage It is 0~13%；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；
The solid-phase component o includes the component of following weight percentage: RuO20~5%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component p includes the component of following weight percentage: RuO20~5%, Pb2Ru2O618~50%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 30~60%, the weight percentage of the glass composition C is 10~ 20%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component p, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~ 13%.
It uses the thick-film resistor paste of above-mentioned 100k Ω/ and resistance value is the thick-film resistor paste of 1M Ω/ arbitrarily to compare After example mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance It is worth the mixed proportion of shelves, any resistance value between adjacent two grades of resistance values can be obtained, do not need to prepare intermediate resistance value shelves again, reduce Manufacturing cost.
By controlling thick-film resistor paste and the resistance value of 100k Ω/ as the glass in the thick-film resistor paste of 1M Ω/ Mutually with the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while control is led The variation ratio of electric phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the systems that a kind of above-mentioned Standard resistance range is 100k Ω/~1M Ω/ thick-film resistor paste Preparation Method, the Standard resistance range are that 100k Ω/~1M Ω/ thick-film resistor paste uses resistance value for the thickness of 100k Ω/ The thick-film resistor paste that film resistance slurry and resistance value are 1M Ω/ mixes.
It is 1M Ω/~10M Ω/ thick-film resistor paste, the resistance the present invention also provides a kind of Standard resistance range Slurry is made by the thick-film resistor paste that the thick-film resistor paste that resistance value is 1M Ω/ and resistance value are 10M Ω/；
The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 1M Ω/ are 10M Ω/ includes solid phase Ingredient and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35 ~75:25~65；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；
The solid-phase component o includes the component of following weight percentage: RuO20~5%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component p includes the component of following weight percentage: RuO20~5%, Pb2Ru2O618~50%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 30~60%, the weight percentage of the glass composition C is 10~ 20%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component p, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~ 13%；
The thick-film resistor paste that the resistance value is 10M Ω/ includes at least one of solid-phase component q and solid-phase component r；
The solid-phase component q includes the component of following weight percentage: RuO20~5%, Pb2Ru2O610~40% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 40~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component r includes the component of following weight percentage: RuO20~5%, Pb2Ru2O610~40%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 40~60%, the weight percentage of the glass composition C is 10~ 20%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In In the solid-phase component r, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~ 13%.
It uses the thick-film resistor paste of above-mentioned 1M Ω/ and resistance value is the thick-film resistor paste of 10M Ω/ with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can be obtained any resistance value between adjacent two grades of resistance values, does not need to prepare intermediate resistance value shelves again, reduce life Produce manufacturing cost.
By controlling thick-film resistor paste and the resistance value of 1M Ω/ as the glass phase in the thick-film resistor paste of 10M Ω/ With the glass phase constituent of conductive phase, so that glass phase each component can control in a certain range after mixing, while conduction is controlled The variation ratio of phase avoids adjacent two grades of conductive phases from biggish ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~ 70:30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it not will lead to generate slight crack or bubble on the resin of film forming in this way, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides the preparations that a kind of above-mentioned Standard resistance range is 1M Ω/~10M Ω/ thick-film resistor paste Method, the Standard resistance range are that 1M Ω/~10M Ω/ thick-film resistor paste uses resistance value for the thick-film resistor of 1M Ω/ The thick-film resistor paste that slurry and resistance value are 10M Ω/ mixes.
The beneficial effects of the present invention are: the present invention provides a kind of thick-film resistor paste, thick-film resistor of the present invention Can by mixing 0.1 Ω/~10M Ω/ within the scope of 0.1 Ω/, 1 Ω/, 10 Ω/, 100 Ω/, 1k Ω/, 10k Ω/, 100k Ω/, the adjacent resistance value shelves of 1M Ω/ and 10M Ω/ nine thick-film resistor paste obtain adjacent resistance value Between any resistance value, adjacent resistance value shelves slurry mixing have good mixed performance, electrical property will not deteriorate after mixing, tool Body is embodied in: (1) resistance obtained after mixing is able to maintain in TCR in ± 100ppm, especially in 820 DEG C~880 DEG C sintering temperature Under degree, still ensure that TCR in ± 100ppm；(2) antistatic property is between two resistance value shelves after mixing, without being more than mixing Two resistance value shelves.The resistance slurry that the resistance slurry of adjacent resistance value shelves is mixed to get with any ratio, low-resistance section (0.1 Ω, 1 Ω, 10 Ω), bullion content is lower than commercial product, but performance is suitable, so at low cost, cost performance with higher, significantly Reduce production cost.
Specific embodiment
To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment to the present invention It is described further.
Embodiment 1
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: Ag 20%, Pd 65% and glass composition 15%；Institute Stating glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass group It closes in object, the weight percentage of the glass composition A is 5%, and the weight percentage of the glass composition B is The weight percentage of 24%, the glass composition C are 70%, and the weight percentage of the glass composition D is 1%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 15%, SrO 20%, Na2O 10%, K2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 2
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
Solid-phase component includes the component of following weight percentage: Ag 60%, Pd 5%, RuO220% and glass combination Object 15%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In In the glass composition, the weight percentage of the glass composition A is 20%, the weight hundred of the glass composition B Dividing content is 50%, and the weight percentage of the glass composition C is 20%, and the weight percent of the glass composition D contains Amount is 10%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO275%, Al2O315% and B2O3 10%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 3
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
Solid-phase component includes the component of following weight percentage: Ag 60%, Pd 15%, RuO220% and glass group Close object 5%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In In the glass composition, the weight percentage of the glass composition A is 20%, the weight hundred of the glass composition B Dividing content is 50%, and the weight percentage of the glass composition C is 20%, and the weight percent of the glass composition D contains Amount is 10%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO240%, K2O 10%, Al2O3 15%, B2O325% and ZnO 10%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is CuO and MnO2Mixture.
Embodiment 4
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component of following weight percentage: Ag 20%, Pd 40%, RuO210%, glass Composition 20% and inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 20%, the glass composition B's Weight percentage is 50%, and the weight percentage of the glass composition C is 30%；The inorganic filler include CuO, MnO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 2%, MnO2Weight percentage be 3%, ZrSiO4Weight percentage be 5%；
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 5
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component includes the component of following weight percentage: Ag 55%, Pd 13%, glass composition 5% With inorganic filler 27%；The glass composition includes glass composition A, glass composition B and glass composition C；Described In glass composition, the weight percentage of the glass composition A is 5%, the weight percentage of the glass composition B It is 25%, the weight percentage of the glass composition C is 70%；The inorganic filler includes CuO, MnO2、Nb2O5、 SiO2、TiO2、ZrO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percent contain Amount is 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, K2O 8%, Al2O312%, B2O310% and ZnO 10%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 6
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste described in the present embodiment include Solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent =35:65；
Solid-phase component includes the component of following weight percentage: Ag 20%, Pd 50% and glass composition 30%；Institute Stating glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass group It closes in object, the weight percentage of the glass composition A is 30%, and the weight percentage of the glass composition B is The weight percentage of 30%, the glass composition C are 30%, and the weight percentage of the glass composition D is 10%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 7
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste described in the present embodiment include Solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent =75:25；
The solid-phase component includes the component of following weight percentage: Ag 50%, Pd 5%, RuO25% and glass Composition 40%；The glass composition includes glass composition A, glass composition C and glass composition D；In the glass In composition, the weight percentage of the glass composition A is 29%, and the weight percentage of the glass composition C is The weight percentage of 70%, the glass composition D are 1%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 8
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste described in the present embodiment include Solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent =75:25；
The solid-phase component includes the component of following weight percentage: Ag 40%, Pd 20% and glass composition 40%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；Institute It states in glass composition, the weight percentage of the glass composition A is 30%, the weight percent of the glass composition B Content is 20%, and the weight percentage of the glass composition C is 45%, the weight percentage of the glass composition D It is 5%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 35%, SrO 10%, Na2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is MnO2。
Embodiment 9
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste described in the present embodiment include Solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent =50:50；
The solid-phase component includes the component of following weight percentage: Ag 20%, Pd 40%, RuO210%, glass Composition 20% and inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 10%, the glass composition B's Weight percentage is 30%, and the weight percentage of the glass composition C is 60%；The inorganic filler include CuO, MnO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 2%, MnO2Weight percentage be 3%, ZrSiO4Weight percentage be 5%；
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 10
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste described in the present embodiment include Solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent =60:40；
The solid-phase component includes the component of following weight percentage: Ag550%, Pd 13%, glass composition 5% With inorganic filler 27%；The glass composition includes glass composition A and glass composition C；In the glass composition, The weight percentage of the glass composition A is 30%, and the weight percentage of the glass composition C is 70%；It is described Inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4；In the solid-phase component, the weight hundred of CuO Dividing content is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percent contain Amount is 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 11
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: Ag 10%, Pd 20%, RuO220% and glass group Close object 50%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 10%, the weight of the glass composition B Percentage composition is 40%, and the weight percentage of the glass composition C is 30%, the weight percent of the glass composition D Content is 20%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 12
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: Ag 30%, RuO250% and glass composition 20%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；Institute It states in glass composition, the weight percentage of the glass composition A is 40%, the weight percent of the glass composition B Content is 10%, and the weight percentage of the glass composition C is 40%, the weight percentage of the glass composition D It is 10%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 15%, Al2O3 15%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 13
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: Ag 40%, Pd 20%, RuO220% and glass Glass composition 20%；The glass composition includes glass composition A, glass composition B, glass composition C and glass combination Object D；In the glass composition, the weight percentage of the glass composition A is 19%, the glass composition B's Weight percentage is 10%, and the weight percentage of the glass composition C is 70%, the weight of the glass composition D Percentage composition is 1%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO275%, Na2O 10%, K2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is MnO2。
Embodiment 14
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component of following weight percentage: Ag 13%, RuO240%, glass composition 20% and inorganic filler 27%；The glass composition includes glass composition A, glass composition B and glass composition C；In In the glass composition, the weight percentage of the glass composition A is 10%, the weight hundred of the glass composition B Dividing content is 40%, and the weight percentage of the glass composition C is 50%；The inorganic filler includes MnO2、Nb2O5、 SiO2、ZrO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 15
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component includes the component of following weight percentage: Ag 20%, Pd 20%, RuO220%, glass Composition 20% and inorganic filler 20%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 40%, the glass composition B's Weight percentage is 10%, and the weight percentage of the glass composition C is 50%；The inorganic filler include CuO, MnO2、ZrO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 12%.
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 16
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: RuO250% and glass composition 50%；The glass Composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass composition In, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 30%, institute The weight percentage for stating glass composition C is 40%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 17
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: Ag 20%, Pd 10%, RuO220% and glass Glass composition 50%；The glass composition includes glass composition A, glass composition B, glass composition C and glass combination Object D；In the glass composition, the weight percentage of the glass composition A is 40%, the glass composition B's Weight percentage is 30%, and the weight percentage of the glass composition C is 10%, the weight of the glass composition D Percentage composition is 20%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 15%, SrO 5%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 18
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: Ag 10%, Pd 10%, RuO250% and glass Glass composition 30%；The glass composition includes glass composition A, glass composition B, glass composition C and glass combination Object D；In the glass composition, the weight percentage of the glass composition A is 14%, the glass composition B's Weight percentage is 50%, and the weight percentage of the glass composition C is 35%, the weight of the glass composition D Percentage composition is 1%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO275%, SrO 10%, Na2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5。
Embodiment 19
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component of following weight percentage: RuO250%, glass composition 30% and inorganic Filler 20%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass group It closes in object, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is The weight percentage of 30%, the glass composition C are 30%；The inorganic filler is CuO, Nb2O5、TiO2、ZrO2With ZrSiO4Mixture, in the solid-phase component, the weight percentage of CuO is 3%, Nb2O5Weight percentage be 3%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 11%.
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 20
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor paste, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component includes the component of following weight percentage: Ag 20%, Pd 10%, RuO220%, glass Composition 10% and inorganic filler 27%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 40%, the glass composition B's Weight percentage is 20%, and the weight percentage of the glass composition C is 40%；The inorganic filler be CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 21
A kind of embodiment of 1k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: RuO25%, Pb2Ru2O630% and glass composition 65%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；Institute It states in glass composition, the weight percentage of the glass composition A is 10%, the weight percent of the glass composition B Content is 50%, and the weight percentage of the glass composition C is 20%, the weight percentage of the glass composition D It is 20%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 22
A kind of embodiment of 1k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO230% and glass composition 70%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is 10%, The weight percentage of the glass composition C is 45%, and the weight percentage of the glass composition D is 5%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 15%, Al2O3 15%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 23
A kind of embodiment of 1k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO25%, Pb2Ru2O615% and glass group Close object 80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 10%, the weight of the glass composition B Percentage composition is 39%, and the weight percentage of the glass composition C is 50%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO275%, SrO 10%, Na2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 24
A kind of embodiment of 1k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component of following weight percentage: RuO230%, Pb2Ru2O610%, glass group Close object 50% and inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10%, the weight of the glass composition B Measuring percentage composition is 50%, and the weight percentage of the glass composition C is 40%；The inorganic filler is CuO, ZrO2With ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 7%.
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 25
A kind of embodiment of 1k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component includes the component of following weight percentage: RuO25%, glass composition 63% and inorganic Filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass group It closes in object, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is The weight percentage of 10%, the glass composition C are 50%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2's Weight percentage is 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percent Content is 13%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 26
A kind of embodiment of 10k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: Pb2Ru2O650% and glass composition 50%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 20%, and the weight percentage of the glass composition B is 20%, The weight percentage of the glass composition C is 40%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 27
A kind of embodiment of 10k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO220%, Pb2Ru2O610% and glass group Close object 70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 50%, the weight of the glass composition B Percentage composition is 39%, and the weight percentage of the glass composition C is 10%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 15%, Al2O3 15%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 28
A kind of embodiment of 10k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO210%, Pb2Ru2O610% and glass group Close object 80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 45%, the weight of the glass composition B Percentage composition is 35%, and the weight percentage of the glass composition C is 10%, the weight percent of the glass composition D Content is 10%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO275%, Na2O 10%, K2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 29
A kind of embodiment of 10k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component Pb of following weight percentage2Ru2O618%, glass composition 50% and nothing Machine filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In composition, the weight percentage of the glass composition A is 20%, and the weight percentage of the glass composition B is The weight percentage of 50%, the glass composition C are 30%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4In mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2 Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Amount percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight hundred Dividing content is 13%；
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 30
A kind of embodiment of 10k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component includes the component of following weight percentage: RuO25%, Pb2Ru2O610%, glass combination Object 80% and inorganic filler 5%；The glass composition includes glass composition A, glass composition B and glass composition C；In In the glass composition, the weight percentage of the glass composition A is 50%, the weight hundred of the glass composition B Dividing content is 20%, and the weight percentage of the glass composition C is 30%；The inorganic filler is CuO and MnO2It is mixed Close object；In the solid-phase component, the weight percentage of CuO is 2%, MnO2Weight percentage be 3%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 31
A kind of embodiment of 100k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase Ingredient=35:65；
Solid-phase component includes the component of following weight percentage: Pb2Ru2O620% and glass composition 80%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 60%, The weight percentage of the glass composition C is 10%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 32
A kind of embodiment of 100k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase Ingredient=75:25；
The solid-phase component includes the component of following weight percentage: RuO210%, Pb2Ru2O620% and glass group Close object 70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 34%, and the weight percentage of the glass composition C is 25%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 5%, Na2O 10%, Al2O315%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 33
A kind of embodiment of 100k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase Ingredient=75:25；
The solid-phase component includes the component of following weight percentage: Pb2Ru2O650% and glass composition 50%； The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass In composition, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is The weight percentage of 60%, the glass composition C are 20%, and the weight percentage of the glass composition D is 10%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO275%, SrO 10%, K2O 10%, Al2O31%, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 34
A kind of embodiment of 100k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase Ingredient=50:50；
The solid-phase component includes the component of following weight percentage: Pb2Ru2O618%, 50% and of glass composition Inorganic filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In glass composition, the weight percentage of the glass composition A is 10%, the weight percentage of the glass composition B It is 60%, the weight percentage of the glass composition C is 30%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4In mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2 Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Amount percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight hundred Dividing content is 13%；The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 35
A kind of embodiment of 100k Ω/ thick-film resistor paste of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase Ingredient=60:40；
The solid-phase component includes the component of following weight percentage: RuO210%, Pb2Ru2O625%, glass group Close object 60% and inorganic filler 5%；The glass composition includes glass composition A, glass composition B and glass composition C； In the glass composition, the weight percentage of the glass composition A is 30%, the weight of the glass composition B Percentage composition is 60%, and the weight percentage of the glass composition C is 10%；The inorganic filler is MnO2And ZrSiO4 Mixture；In the solid-phase component, MnO2Weight percentage be 2%, ZrSiO4Weight percentage be 3%.
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 36
A kind of embodiment of 1M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: Pb2Ru2O650% and glass composition 50%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 60%, The weight percentage of the glass composition C is 20%, and the weight percentage of the glass composition D is 10%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 37
A kind of embodiment of 1M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO210%, Pb2Ru2O620% and glass group Close object 70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 44%, and the weight percentage of the glass composition C is 15%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 15%, Al2O3 15%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 38
A kind of embodiment of 1M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO215%, Pb2Ru2O635% and glass group Close object 60%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 20%, and the weight percentage of the glass composition C is 25%, the weight percent of the glass composition D Content is 15%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO275%, Na2O 10%, K2O 10%, Al2O31%, B2O31% and ZnO3%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 39
A kind of embodiment of 1M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component of following weight percentage: Pb2Ru2O645%, 50% and of glass composition Inorganic filler 5%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In composition, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is The weight percentage of 30%, the glass composition C are 20%；The inorganic filler includes Nb2O5；In the solid-phase component In, Nb2O5Weight percentage be 3%, Ta2O5Weight percentage be 2%；
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 40
A kind of embodiment of 1M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component include following weight percentage component:, Pb2Ru2O618%, 50% and of glass composition Inorganic filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In glass composition, the weight percentage of the glass composition A is 10%, the weight percentage of the glass composition B It is 60%, the weight percentage of the glass composition C is 30%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2's Weight percentage is 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percent Content is 13%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO240%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 41
A kind of embodiment of 10M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=35:65；
Solid-phase component includes the component of following weight percentage: Pb2Ru2O610% and glass composition 90%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 60%, The weight percentage of the glass composition C is 10%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage: PbO 10%, SiO235%, CaO 30%, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage: SiO240%, SrO 20%, Na2O 10%, K2O 10%, Al2O35%, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage: PbO 60%, SiO210%, Al2O3 8%, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 42
A kind of embodiment of 10M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: RuO25%, Pb2Ru2O635% and glass group Close object 60%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 49%, and the weight percentage of the glass composition C is 10%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage: PbO 50%, SiO235%, CaO 5%, Al2O31%, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO240%, BaO 15%, Al2O3 15%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 88%, SiO210%, Al2O31% And B2O31%.
Embodiment 43
A kind of embodiment of 10M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=75:25；
The solid-phase component includes the component of following weight percentage: Pb2Ru2O640% and glass composition 60%； The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass In composition, the weight percentage of the glass composition A is 20%, and the weight percentage of the glass composition B is The weight percentage of 40%, the glass composition C are 20%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage: PbO 30%, SiO240%, CaO 5%, Al2O35%, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage: SiO270%, SrO 10%, K2O 10%, Al2O31%, B2O31% and ZnO 8%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O31%, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage: PbO 50%, SiO228%, Al2O3 8%, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 44
A kind of embodiment of 10M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=50:50；
The solid-phase component includes the component of following weight percentage: Pb2Ru2O610%, 80% and of glass composition Inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In glass composition, the weight percentage of the glass composition A is 40%, the weight percentage of the glass composition B It is 40%, the weight percentage of the glass composition C is 20%；The inorganic filler is ZrO2And ZrSiO4Mixture； In the solid-phase component, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 8%.
The glass composition A includes the component of following weight percentage: PbO 20%, SiO235%, CaO 22%, Al2O310%, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage: SiO260%, BaO 12%, SrO 8%, Na2O 10%, K2O 2%, Al2O35%, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage: PbO 71%, SiO210%, Al2O37%, B2O36% and ZnO 6%.
Embodiment 45
A kind of embodiment of 10M Ω/ thick-film resistor paste of the present invention, thick-film resistor paste packet described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic to coordinate Point=60:40；
The solid-phase component includes the component of following weight percentage: RuO28%, Pb2Ru2O610%, glass combination Object 50% and inorganic filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 50%, and the weight percentage of the glass composition C is 10%；The inorganic filler is CuO, MnO2、 Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight percentage be 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4 Weight percentage be 13%；The glass composition A includes the component of following weight percentage: PbO 10%, SiO2 40%, CaO 30%, Al2O310%, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage: SiO250%, BaO 10%, SrO 14%, Na2O 8%, K2O 3%, Al2O35%, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage: PbO 50%, SiO230%, Al2O310%, B2O38% and ZnO 2%.
Embodiment 46
A kind of embodiment of 0.46 Ω of the present invention/ thick-film resistor paste, 0.1 Ω as described in embodiment 1/ thick film 1 Ω described in resistance slurry and embodiment 6/ thick-film resistor paste is mixed to prepare by the weight ratio of 1:1.
Embodiment 47
A kind of embodiment of 0.63 Ω of the present invention/ thick-film resistor paste, 0.1 Ω as described in embodiment 5/ thick film 1 Ω described in resistance slurry and embodiment 9/ thick-film resistor paste is mixed to prepare by the weight ratio of 1:4.
Embodiment 48
A kind of embodiment of 5.9 Ω of the present invention/ thick-film resistor paste, 1 Ω as described in embodiment 5/ thick film electricity 10 Ω described in resistance paste and embodiment 13/ thick-film resistor paste is mixed to prepare by the weight ratio of 3:7.
Embodiment 49
A kind of embodiment of 2.3 Ω of the present invention/ thick-film resistor paste, 1 Ω as described in embodiment 9/ thick film electricity 10 Ω described in resistance paste and embodiment 11/ thick-film resistor paste is mixed to prepare by the weight ratio of 7:3.
Embodiment 50
A kind of embodiment of 81.3 Ω of the present invention/ thick-film resistor paste, 10 Ω as described in embodiment 11/ thick film 100 Ω described in resistance slurry and embodiment 19/ thick-film resistor paste is mixed to prepare by the weight ratio of 1:4.
Embodiment 51
A kind of embodiment of 15.9 Ω of the present invention/ thick-film resistor paste, 10 Ω as described in embodiment 13/ thick film 100 Ω described in resistance slurry and embodiment 17/ thick-film resistor paste is mixed to prepare by the weight ratio of 4:1.
Embodiment 52
A kind of embodiment of 823.1 Ω of the present invention/ thick-film resistor paste, 100 Ω as described in embodiment 17/ are thick 1k Ω/ thick-film resistor paste described in film resistance slurry and embodiment 21 is mixed to prepare by the weight ratio of 1:9.
Embodiment 53
A kind of embodiment of 134.8 Ω of the present invention/ thick-film resistor paste, 100 Ω as described in embodiment 19/ are thick 1k Ω/ thick-film resistor paste described in film resistance slurry and embodiment 24 is mixed to prepare by the weight ratio of 9:1.
Embodiment 54
A kind of embodiment of 4.12k Ω/ thick-film resistor paste of the present invention, 1k Ω/ as described in embodiment 21 are thick 10k Ω/ thick-film resistor paste described in film resistance slurry and embodiment 30 is mixed to prepare by the weight ratio of 1:1.
Embodiment 55
A kind of embodiment of 7.48k Ω/ thick-film resistor paste of the present invention, 1k Ω/ as described in embodiment 24 are thick 10k Ω/ thick-film resistor paste described in film resistance slurry and embodiment 27 is mixed to prepare by the weight ratio of 1:4.
Embodiment 56
A kind of embodiment of 72.8k Ω/ thick-film resistor paste of the present invention, 10k Ω/ as described in embodiment 30 are thick 100k Ω/ thick-film resistor paste described in film resistance slurry and embodiment 31 is mixed to prepare by the weight ratio of 3:7.
Embodiment 57
A kind of embodiment of 24.3k Ω/ thick-film resistor paste of the present invention, 10k Ω/ as described in embodiment 30 are thick 100k Ω/ thick-film resistor paste described in film resistance slurry and embodiment 35 is mixed to prepare by the weight ratio of 7:3.
Embodiment 58
A kind of embodiment of 671.7k Ω/ thick-film resistor paste of the present invention, 100k Ω/ as described in embodiment 31 1M Ω/ thick-film resistor paste described in thick-film resistor paste and embodiment 40 is mixed to prepare by the weight ratio of 1:4.
Embodiment 59
A kind of embodiment of 187.9k Ω/ thick-film resistor paste of the present invention, 100k Ω/ as described in embodiment 35 1M Ω/ thick-film resistor paste described in thick-film resistor paste and embodiment 40 is mixed to prepare by the weight ratio of 4:1.
Embodiment 60
A kind of embodiment of 7.97M Ω/ thick-film resistor paste of the present invention, 1M Ω/ as described in embodiment 40 are thick 10M Ω/ thick-film resistor paste described in film resistance slurry and embodiment 45 is mixed to prepare by the weight ratio of 1:9.
Embodiment 61
A kind of embodiment of 4.1M Ω/ thick-film resistor paste of the present invention, 1M Ω/ thick film as described in embodiment 40 10M Ω/ thick-film resistor paste described in resistance slurry and embodiment 45 is mixed to prepare by the weight ratio of 4:6.
Comparative example 1
A kind of comparative example of thick-film resistor paste of the present invention, this comparative example are commercially available 0.1 Ω/ thick-film resistor slurry Material.
Comparative example 2
A kind of comparative example of thick-film resistor paste of the present invention, this comparative example are commercially available 1 Ω/ thick-film resistor slurry Material.
Comparative example 3
A kind of comparative example of thick-film resistor paste of the present invention, this comparative example are commercially available 10 Ω/ thick-film resistor slurry Material.
Comparative example 4
A kind of comparative example of thick-film resistor paste of the present invention, this comparative example are commercially available 100 Ω/ thick-film resistor slurry Material.
Comparative example 5
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 1k Ω/ are starched Material.
Comparative example 6
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 10k Ω/ are starched Material.
Comparative example 7
A kind of comparative example of thick-film resistor paste of the present invention, this comparative example are the thick-film resistor of commercially available 100k Ω/ Slurry.
Comparative example 8
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 1M Ω/ are starched Material.
Comparative example 9
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 10M Ω/ are starched Material.
Comparative example 10
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 1k Ω/ described in 4 100 Ω/ thick-film resistor paste and comparative example 5 is mixed with the weight ratio of 1:9 It closes and obtains.
Comparative example 11
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 10k Ω/ described in the thick-film resistor paste and comparative example 6 of the 5 1k Ω/ is mixed with the weight ratio of 1:4 It closes and obtains.
Comparative example 12
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 100k Ω/ described in the thick-film resistor paste and comparative example 7 of the 6 10k Ω/ is with the weight ratio of 7:3 It is obtained by mixing.
Comparative example 13
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 1Mk Ω/ described in the thick-film resistor paste and comparative example 8 of the 7 100k Ω/ is with the weight ratio of 1:4 It is obtained by mixing.
Comparative example 14
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 10Mk Ω/ described in the thick-film resistor paste and comparative example 9 of the 8 1M Ω/ is mixed with the weight ratio of 1:9 It closes and obtains.Embodiment 62
Thick-film resistor paste described in embodiment and comparative example is made to sheet resistance value, the cold resistance temperature of resistance and test resistance Coefficient value (CTCR), heat resistance temperature coefficient value (HTCR), temperature-coefficient of electrical resistance width (TCR width=HTCR-CTCR), ESD, Wherein, 0.1 Ω, the test of 1 Ω resistance value is 300 side's figures, and the test of other resistance values is 1 side's figure, every square chi cun 0.5mm*0.5mm, Each test group takes 30 samples to be tested, and is averaged, wherein
R-55℃、R25℃、R155℃Respectively indicate the resistance value that temperature measures for -55 DEG C, 25 DEG C, 155 DEG C of conditions.The test of ESD Condition are as follows: having a size of 0.5mm*0.5mm, discharged under the conditions of ± 3kV resistance, respectively 3kV discharges 3 times, and then -3kV is put Electricity 3 times, each interval time is 1s, the resistance value before record test and after test.Thick film described in each embodiment and comparative example The test result of resistance made of resistance slurry is shown in Table 1.
The test of resistance made of thick-film resistor paste described in each embodiment and comparative example of table 1
From table 1 it follows that embodiment 46~61 is to be starched using the thick-film resistor of two kinds of adjacent resistance values of the present invention Expect the thick-film resistor paste mixed, the resistance TCR being prepared is relatively stable, thick-film resistor of the ESD between adjacent resistance value Illustrate the mixing of the adjacent resistance value of the thick-film resistor paste through the invention between slurry, the electrical property of the slurry after obtaining between Between the thick-film resistor paste of adjacent resistance value.
Ag, Pd, RuO of the thick-film resistor paste of test comparison example 1~32Etc. bullion contents, and test 1~9 described in Sheet resistance value, TCR, ESD performance under the different temperatures of thick-film resistor paste；Test comparison example 10 and embodiment 52, comparative example 11 With the electricity of thick film described in embodiment 55, comparative example 12 and embodiment 57, comparative example 13 and embodiment 58, comparative example 14 and embodiment 60 Sheet resistance value, TCR, ESD performance of resistance paste at different temperatures, test result are shown in Table 2 and table 3.
The performance test of the thick-film resistor paste of 2 comparative example of table 1~9
The mixed performance test comparison of thick-film resistor paste described in 3 comparative example of table and embodiment
From table 2 it can be seen that for low resistance shelves, in the case where performance is roughly the same, due to formula of the present invention Bullion content is lower, thus it is at low cost, there is higher cost performance；High value shelves, performance are better than commercial product.In table 3, from right It is ratio 10 and embodiment 52, comparative example 11 and embodiment 55, comparative example 12 and embodiment 57, comparative example 13 and embodiment 58, right The comparison of ratio 14 and embodiment 60 is adopted as can be seen that compared with the resistance that the adjacent resistance value of commercially available resistance slurry is mixed to get Electrical property with the resistance of the adjacent resistance value of thick-film resistor paste of the present invention being mixed to get is more preferable, and resistance varying-ratio is more Low, Thermo-sensitive and TCR are more stable, and EDS is smaller, and the various aspects of performance are superior to commercial product.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention And range.

Claims (7)

1. a kind of Standard resistance range is 10k Ω/~100k Ω/ thick-film resistor paste, which is characterized in that the resistance slurry It is made by the thick-film resistor paste that thick-film resistor paste and resistance value that resistance value is 10k Ω/ are 100k Ω/；
The thick-film resistor paste that the thick-film resistor paste and resistance value that the resistance value is 10k Ω/ are 100k Ω/ include solid phase at Point and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；
The solid-phase component k includes the component of following weight percentage: RuO20~20%, Pb2Ru2O610~50% and glass Glass composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass Composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass group The weight percentage for closing object B is 20~50%, and the weight percentage of the glass composition C is 10~40%, the glass The weight percentage of glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage: RuO20~20%, Pb2Ru2O610~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%；Institute Stating inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient l, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain Amount is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred Dividing content is 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 100k Ω/ includes at least one of solid-phase component m and solid-phase component n；
The solid-phase component m includes the component of following weight percentage: RuO20~10%, Pb2Ru2O618~50% and glass Glass composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass Composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass group The weight percentage for closing object B is 30~60%, and the weight percentage of the glass composition C is 10~30%, the glass The weight percentage of glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage: RuO20~10%, Pb2Ru2O618~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%；Institute Stating inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient n, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain Amount is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred Dividing content is 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The glass composition A includes the component of following weight percentage: PbO 10~50%, SiO235~55%, CaO 5 ~30%, Al2O31~20%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、CaO、Al2O3、B2O3And ZnO The sum of weight percentage in glass composition A is at least 95%；
The glass composition B includes the component of following weight percentage: SiO240~75%, BaO 0~15%, SrO 0 ~20%, Na2O 0~10%, K2O 0~10%, Al2O31~15%, B2O31~25% and ZnO 0~10%, it is described SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3It is at least with the sum of weight percentage of the ZnO in glass composition B 95%；
The glass composition C includes the component of following weight percentage: PbO 50~88%, SiO210~30%, Al2O31 ~10%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、Al2O3、B2O3With ZnO in glass composition C The sum of weight percentage is at least 95%；
The glass composition D includes the component of following weight percentage: PbO 60~88%, SiO210~35%, Al2O31~10%, B2O31~10% and transition metal oxide 0~20%, the transition metal oxide include CuO, MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of.
2. Standard resistance range as described in claim 1 is 10k Ω/~100k Ω/ thick-film resistor paste, which is characterized in that In glass composition D, the weight percentage of the transition metal oxide is 0~15%.
3. Standard resistance range as described in claim 1 is 10k Ω/~100k Ω/ thick-film resistor paste, which is characterized in that The weight ratio of the solid-phase component and organic phase constituent are as follows: solid-phase component: organic phase constituent=50~70:30~50.
4. Standard resistance range as described in claim 1 is 10k Ω/~100k Ω/ thick-film resistor paste, which is characterized in that Organic phase constituent includes resin and solvent, and in organic phase constituent, the weight percentage of resin is 0~20%.
5. Standard resistance range as described in claim 1 is 10k Ω/~100k Ω/ thick-film resistor paste, which is characterized in that The resin is at least one of methylcellulose, ethyl cellulose, acrylic resin and epoxy resin.
6. Standard resistance range as described in claim 1 is 10k Ω/~100k Ω/ thick-film resistor paste, which is characterized in that The solvent is terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid diethyl At least one of ester and dioctyl phthalate.
7. a kind of Standard resistance range as described in any one of claim 1~6 is 10k Ω/~100k Ω/ thick-film resistor slurry The preparation method of material, which is characterized in that the Standard resistance range is 10k Ω/~100k Ω/ thick-film resistor paste using resistance The thick-film resistor paste that the thick-film resistor paste and resistance value that value is 10k Ω/ are 100k Ω/ mixes.
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Publication number Priority date Publication date Assignee Title
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CN111739675B (en) * 2020-06-19 2021-03-05 潮州三环（集团）股份有限公司 Thick film resistor paste
CN111916248B (en) * 2020-08-10 2021-12-21 西安宏星电子浆料科技股份有限公司 Thick-film resistor paste with electrostatic discharge resistance and low encapsulation change rate
CN112086254B (en) * 2020-08-12 2021-12-21 西安宏星电子浆料科技股份有限公司 Environment-friendly thick-film resistor paste
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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145805A (en) * 1984-12-19 1986-07-03 イー・アイ・デユポン・ド・ネモアース・アンド・コンパニー Thick film resistor composition
JPH0352202A (en) * 1989-07-20 1991-03-06 Sumitomo Metal Mining Co Ltd Manufacture of thick-film resistor
EP0416525A2 (en) * 1989-09-05 1991-03-13 E.I. Du Pont De Nemours And Company Thermistor composition
CN1075816A (en) * 1991-12-25 1993-09-01 E·I·内穆尔杜邦公司 thick film resistor composition
CN1080086A (en) * 1992-03-30 1993-12-29 E·I·内穆尔杜邦公司 Thick film resistor composition
CN1111798A (en) * 1993-06-07 1995-11-15 纳幕尔材邦公司 Thick film resistor composition
CN1223445A (en) * 1997-12-26 1999-07-21 纳幕尔杜邦公司 Thick film resistor and manufacturing method thereof
JP2001223065A (en) * 1999-12-17 2001-08-17 Daejoo Fine Chemical Co Ltd Resistant paste for forming electric heating body thick layer
US20030154592A1 (en) * 2002-02-15 2003-08-21 Felten John James Method to embed thick film components
CN1744238A (en) * 2004-09-01 2006-03-08 Tdk株式会社 Glass composition for thick film resistor paste, thick film resistor paste, thick-film resistor, and electronic device
CN101800101A (en) * 2009-04-30 2010-08-11 中国振华集团云科电子有限公司 Manufacturing method of positive temperature coefficient chip resistor
CN101990689A (en) * 2008-04-18 2011-03-23 E.I.内穆尔杜邦公司 Surface-modified ruthenium oxide conductive material, lead-free glass(es), thick film resistor paste(s), and devices made therefrom
CN106328251A (en) * 2016-08-18 2017-01-11 陆川县华鑫电子厂 Thick film resistor paste and preparation method thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974304A (en) * 1975-03-03 1976-08-10 General Electric Company Method of making a voltage responsive switch
JPS55140201A (en) * 1979-04-19 1980-11-01 Hitachi Ltd Composition for thick film thermistor
CN86108011B (en) * 1986-11-15 1988-10-26 国营宏明无线电器材厂 Linear thick-film negative temp. coefficient thermistor
US5491118A (en) * 1994-12-20 1996-02-13 E. I. Du Pont De Nemours And Company Cadmium-free and lead-free thick film paste composition
JPH09162016A (en) * 1995-12-12 1997-06-20 Matsushita Electric Ind Co Ltd Zinc oxide varistor, manufacture thereof and crystalline glass composition for coating use which is used for that
JP4722318B2 (en) * 2000-06-05 2011-07-13 ローム株式会社 Chip resistor
US20040113127A1 (en) * 2002-12-17 2004-06-17 Min Gary Yonggang Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto
TW200639880A (en) * 2005-02-21 2006-11-16 Tdk Corp Thick-film resistor and its production process
US8133413B2 (en) * 2008-04-18 2012-03-13 E. I. Du Pont De Nemours And Company Resistor compositions using a Cu-containing glass frit
CN101727997A (en) * 2008-10-23 2010-06-09 银锐明 YBCO thick film resistor slurry
JP5835325B2 (en) * 2011-06-21 2015-12-24 住友金属鉱山株式会社 Ruthenium oxide powder, composition for thick film resistor, thick film resistor paste and thick film resistor using the same
CN104464991B (en) * 2013-09-12 2017-06-06 中国振华集团云科电子有限公司 A kind of preparation method of linear semistor slurry
CN103971866B (en) * 2014-05-20 2017-04-12 立昌先进科技股份有限公司 Rheostat with filtration structure
CN105321642B (en) * 2014-07-31 2017-12-08 中国振华集团云科电子有限公司 A kind of preparation method of high TCR low square resistances LINEAR N TC resistance slurries
MY180840A (en) * 2014-09-12 2020-12-10 Shoei Chemical Ind Co Thick film resistor and production method for same
US9805839B2 (en) * 2014-09-12 2017-10-31 Shoei Chemical Inc. Resistive composition
JP6642786B2 (en) * 2015-04-07 2020-02-12 日本電気硝子株式会社 Composite powder material
CN104916345B (en) * 2015-05-25 2017-06-13 电子科技大学 A kind of thick-film resistor paste and preparation method thereof
CN105741903B (en) * 2016-05-06 2017-04-05 西安电子科技大学 A kind of preparation method of the modified ruthenic oxide thick-film resistor paste of Ag doping
CN105976894A (en) * 2016-07-27 2016-09-28 东莞珂洛赫慕电子材料科技有限公司 Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof
CN106710758B (en) * 2017-01-17 2019-01-22 中国振华集团云科电子有限公司 A kind of preparation method of the linear negative temperature coefficient thermistor of thick film sheet type
CN107731340B (en) * 2017-08-31 2019-06-07 潮州三环（集团）股份有限公司 A kind of thick-film resistor paste conductive paste material

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145805A (en) * 1984-12-19 1986-07-03 イー・アイ・デユポン・ド・ネモアース・アンド・コンパニー Thick film resistor composition
JPH0352202A (en) * 1989-07-20 1991-03-06 Sumitomo Metal Mining Co Ltd Manufacture of thick-film resistor
EP0416525A2 (en) * 1989-09-05 1991-03-13 E.I. Du Pont De Nemours And Company Thermistor composition
CN1075816A (en) * 1991-12-25 1993-09-01 E·I·内穆尔杜邦公司 thick film resistor composition
CN1080086A (en) * 1992-03-30 1993-12-29 E·I·内穆尔杜邦公司 Thick film resistor composition
CN1111798A (en) * 1993-06-07 1995-11-15 纳幕尔材邦公司 Thick film resistor composition
CN1223445A (en) * 1997-12-26 1999-07-21 纳幕尔杜邦公司 Thick film resistor and manufacturing method thereof
JP2001223065A (en) * 1999-12-17 2001-08-17 Daejoo Fine Chemical Co Ltd Resistant paste for forming electric heating body thick layer
JP3423932B2 (en) * 1999-12-17 2003-07-07 大洲精密化学株式会社 Resistive paste for forming electric heating element thick film
US20030154592A1 (en) * 2002-02-15 2003-08-21 Felten John James Method to embed thick film components
CN1744238A (en) * 2004-09-01 2006-03-08 Tdk株式会社 Glass composition for thick film resistor paste, thick film resistor paste, thick-film resistor, and electronic device
CN101990689A (en) * 2008-04-18 2011-03-23 E.I.内穆尔杜邦公司 Surface-modified ruthenium oxide conductive material, lead-free glass(es), thick film resistor paste(s), and devices made therefrom
CN101800101A (en) * 2009-04-30 2010-08-11 中国振华集团云科电子有限公司 Manufacturing method of positive temperature coefficient chip resistor
CN106328251A (en) * 2016-08-18 2017-01-11 陆川县华鑫电子厂 Thick film resistor paste and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
张显等: "烧结温度对厚膜电阻的影响研究 ", 《电子器件》 *
罗慧等: "钌系厚膜电阻重烧变化特性的研究 ", 《贵金属》 *

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CN108053960B (en) 2019-10-15
CN110580993A (en) 2019-12-17

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