CN108053960A - A kind of thick-film resistor paste - Google Patents

A kind of thick-film resistor paste Download PDF

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Publication number
CN108053960A
CN108053960A CN201710998988.9A CN201710998988A CN108053960A CN 108053960 A CN108053960 A CN 108053960A CN 201710998988 A CN201710998988 A CN 201710998988A CN 108053960 A CN108053960 A CN 108053960A
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CN
China
Prior art keywords
glass composition
weight percentage
solid
thick
film resistor
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Granted
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CN201710998988.9A
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Chinese (zh)
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CN108053960B (en
Inventor
邱基华
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Chaozhou Three Circle Group Co Ltd
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Chaozhou Three Circle Group Co Ltd
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Priority to CN201910830324.0A priority Critical patent/CN110634637B/en
Priority to CN201910830323.6A priority patent/CN110580993B/en
Priority to CN201710998988.9A priority patent/CN108053960B/en
Priority to CN201910830322.1A priority patent/CN110504075B/en
Priority to CN201910830321.7A priority patent/CN110534274B/en
Publication of CN108053960A publication Critical patent/CN108053960A/en
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C03C3/072—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron
    • C03C3/074—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc
    • C03C3/0745—Glass compositions containing silica with less than 40% silica by weight containing lead containing boron containing zinc containing more than 50% lead oxide, by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors

Abstract

The invention discloses a kind of thick-film resistor pastes, are thick-film resistor paste of 0.1 Ω/~10M Ω/ scopes and preparation method thereof the present invention also provides a kind of Standard resistance range.Thick-film resistor of the present invention can be by mixing 0.1 Ω/ in the range of 0.1 Ω/~10M Ω/, 1 Ω/, 10 Ω/, 100 Ω/, 1k Ω/, 10k Ω/, 100k Ω/, the thick-film resistor paste of the adjacent resistance value shelves of 1M Ω/ and 10M Ω/ nine obtains the thick-film resistor paste of the arbitrary resistance value between adjacent resistance value, the slurry mixing of adjacent resistance value shelves has good mixed performance, electrical property will not deteriorate after mixing, the resistance slurry that the resistance slurry of adjacent resistance value shelves is mixed to get with arbitrary ratio, there is no middle gear changeover portions, greatly reduce production cost.

Description

A kind of thick-film resistor paste
Technical field
The present invention relates to a kind of resistance slurries, and in particular to a kind of thick-film resistor paste.
Background technology
Raw material of the thick-film resistor paste as production plate resistor, it is desirable that slurry has wider Standard resistance range, can be full The demand of 0.1 Ω of foot production~10M Ω resistance values piece resistance.Existing resistance slurry is divided by resistance value, and every 1 order of magnitude is one grade, By mixing the adjacent resistance value shelves of different proportion, to obtain target resistance value.
Thick-film resistor paste problem present in the production process of plate resistor is at present：
1) electrical property (EDS, dimensional effect) can deteriorate after some resistance value shelves mixing, and the performance requirement to meet piece resistance, It is more harsh to mix the process conditions requirement of Hou Duihou roads processing, such as at 820~880 DEG C, TCR (the resistance temperature of adjacent resistance value shelves Degree coefficient) ± 100ppm can be maintained at, and after mixing, TCR can be even up to 400ppm beyond 100ppm under similarity condition；
2) good resistance value curve can not be obtained after the directly mixing of some adjacent resistance value shelves, so often there is centre Resistance value shelves, this can cause the increase of cost.
The reason for above problem is caused to occur is：Due to adjacent resistance value shelves resistance value, there are the difference of the order of magnitude, every liter of resistance values High an order of magnitude generally can all use following methods：1st, content of the high powder of electrical conductivity in system is reduced；2nd, using electricity The lower conductive phase of conductance or the ratio table for reducing conductive phase；3rd, in reduction system total conductive phase content, improve amount of glass；4th, increase Add the content for the glass that resistance value can be improved in component；Ensure electrical property, conductive phase, the proportioning of glass phase, the ingredient of glass phase It must ensure in certain scope, and adjacent two grades of conductive phases, glass facial difference are larger, so can band incoming call when mixing The deterioration of performance.
The content of the invention
It is provided a kind of with good mixed performance it is an object of the invention to overcome the shortcomings of the prior art part Thick-film resistor paste.
To achieve the above object, the technical solution taken of the present invention is：A kind of thick-film resistor paste, includes glass combination Object；
The glass composition is included in glass composition A, glass composition B, glass composition C and glass composition D At least two；
The glass composition A includes the component of following weight percentage：PbO 10~50%, SiO235~55%, CaO5~30%, Al2O31~20%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、CaO、Al2O3、B2O3With The sum of the weight percentages of ZnO in glass composition A are at least 95%；
The glass composition B includes the component of following weight percentage：SiO240~75%, BaO 0~15%, SrO 0~20%, Na2O 0~10%, K2O 0~10%, Al2O31~15%, B2O31~25% and ZnO 0~10%, institute State SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3It is at least with the sum of weight percentages of the ZnO in glass composition B 95%；
The glass composition C includes the component of following weight percentage：PbO 50~88%, SiO210~30%, Al2O31~10%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、Al2O3、B2O3With ZnO in glass composition C In the sum of weight percentage be at least 95%；
The glass composition D includes the component of following weight percentage：PbO 60~88%, SiO210~35%, Al2O31~10%, B2O31~10% and transition metal oxide 0~20%, the transition metal oxide include CuO, MnO2、Nb2O5、Ta2O5、TiO2And ZrO2At least one of.
Good performance can not be obtained when glass composition A is used alone under normal conditions, glass composition need to be coordinated B, at least one of glass composition C, could obtain good electrical property and wider array of technique uses window.Glass composition The TCR of the system of the controllable thick-film resistor paste of addition of D.
Preferably, in glass composition D, the weight percentage of the transition metal oxide is 0~15%, too much It is unstable that glass can be resulted in, easy crystallization simultaneously causes resistance endurance quality to decline.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 0.1 Ω/~1 Ω/, the resistance slurry Material is made by the thick-film resistor paste that resistance value is 0.1 Ω/ and the thick-film resistor paste that resistance value is 1 Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 0.1 Ω/ and resistance value is 1 Ω/ includes solid phase The weight ratio of ingredient and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35 ~75:25~65；
The resistance value is that the solid-phase component of the resistance slurry of 0.1 Ω/ is included in solid-phase component a and solid-phase component b extremely Few one kind；
The solid-phase component a includes the component of following weight percentage：Ag 20~60%, Pd 5~65%, RuO2 0 ~20% and glass composition 5~30%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 5~20%, institute The weight percentage of glass composition B is stated as 20~50%, the weight percentage of the glass composition C for 30~ The weight percentage of 70%, the glass composition D are 1~20%；
The solid-phase component b includes the component of following weight percentage：Ag 20~60%, Pd 5~65%, RuO2 0 ~20%, glass composition 5~30% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 5~ The weight percentage of 20%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 30~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component b, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 1 Ω/ includes at least one of solid-phase component c and solid-phase component d；
The solid-phase component c includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO2 0 ~20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, The weight percentage of the glass composition B is 0~30%, the weight percentage of the glass composition C for 30~ The weight percentage of 70%, the glass composition D are 1~20%；
The solid-phase component d includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO2 0 ~20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2's Weight percentage is 0~2%, ZrSiO4Weight percentage be 0~13%.
Use above-mentioned 0.1 Ω/ thick-film resistor paste and resistance value be 1 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, need not prepare intermediate resistance value shelves again, reduce life Production manufacture cost.
By controlling thick-film resistor paste and the resistance value of 0.1 Ω/ as the glass phase in the thick-film resistor paste of 1 Ω/ With the glass phase constituent of conductive phase so that glass phase each component can control within the specific limits after mixing, while control conduction The variation ratio of phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.Solvent Terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate can be selected from And dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of preparations for the thick-film resistor paste that above-mentioned Standard resistance range is 0.1 Ω/~1 Ω/ Method, the thick-film resistor paste that the Standard resistance range is 0.1 Ω/~1 Ω/ use thick-film resistor of the resistance value for 0.1 Ω/ Slurry and the thick-film resistor paste that resistance value is 1 Ω/ mix.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 1 Ω/~10 Ω/, the resistance slurry Material is made by the thick-film resistor paste that resistance value is 1 Ω/ and the thick-film resistor paste that resistance value is 10 Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 1 Ω/ and resistance value is 10 Ω/ include solid phase into Point and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent be：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 1 Ω/ includes at least one of solid-phase component c and solid-phase component d；
The solid-phase component c includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO2 0 ~20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, The weight percentage of the glass composition B is 0~30%, the weight percentage of the glass composition C for 30~ The weight percentage of 70%, the glass composition D are 1~20%；
The solid-phase component d includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO2 0 ~20%, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2's Weight percentage is 0~2%, ZrSiO4Weight percentage be 0~13%；
The solid-phase component e includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO2 20~50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass group Close object C and glass composition D；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is The weight percentage of 20~60%, the glass composition D are 1~20%；
The solid-phase component f includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO2 20~50%, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition include glass composition A, Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10 The weight percentage of~40%, the glass composition B are 10~40%, the weight percentage of the glass composition C For 20~60%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5's Weight percentage is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage for 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
Thick-film resistor paste and the resistance value of above-mentioned 1 Ω/ is used to be mixed for the thick-film resistor paste of 10 Ω/ with arbitrary proportion After conjunction, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value shelves Mixed proportion, can obtain any resistance value between adjacent two grades of resistance values, intermediate resistance value shelves need not be prepared again, reduce production Manufacture cost.
By control 1 Ω/ thick-film resistor paste and resistance value be 10 Ω/ thick-film resistor paste in glass phase and The glass phase constituent of conductive phase so that glass phase each component can control within the specific limits after mixing, while control conductive phase Variation ratio, adjacent two grades of conductive phases is avoided larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.Solvent Terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, diethyl phthalate can be selected from And dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
It is the preparation method of the thick-film resistor paste of 1 Ω/~10 Ω/ the present invention also provides above-mentioned Standard resistance range, The thick-film resistor paste that the Standard resistance range is 1 Ω/~10 Ω/ uses thick-film resistor paste and resistance of the resistance value for 1 Ω/ The thick-film resistor paste being worth for 10 Ω/ mixes.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 10 Ω/~100 Ω/, the resistance Slurry is made by the thick-film resistor paste that resistance value is 10 Ω/ and the thick-film resistor paste that resistance value is 100 Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 10 Ω/ and resistance value is 100 Ω/ includes solid phase The weight ratio of ingredient and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35 ~75:25~65；
The thick-film resistor paste that the resistance value is 10 Ω/ includes at least one of solid-phase component e and solid-phase component f；
The solid-phase component e includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO2 20~50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass group Close object C and glass composition D；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is The weight percentage of 20~60%, the glass composition D are 1~20%；
The solid-phase component f includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO2 20~50%, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition include glass composition A, Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10 The weight percentage of~40%, the glass composition B are 10~40%, the weight percentage of the glass composition C For 20~60%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5's Weight percentage is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage for 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 100 Ω/ includes at least one of solid-phase component g and solid-phase component h；
The solid-phase component g includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO2 20 ~50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 20~50%, the weight percentage of the glass composition C for 10~ The weight percentage of 40%, the glass composition D are 1~20%；
The solid-phase component h includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO2 20 ~50%, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
Use above-mentioned 10 Ω/ thick-film resistor paste and resistance value be 100 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, need not prepare intermediate resistance value shelves again, reduce life Production manufacture cost.
By controlling thick-film resistor paste and the resistance value of 10 Ω/ as the glass phase in the thick-film resistor paste of 100 Ω/ With the glass phase constituent of conductive phase so that glass phase each component can control within the specific limits after mixing, while control conduction The variation ratio of phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of preparations for the thick-film resistor paste that above-mentioned Standard resistance range is 10 Ω/~100 Ω/ Method, the thick-film resistor paste that the Standard resistance range is 10 Ω/~100 Ω/ use thick-film resistor of the resistance value for 10 Ω/ Slurry and the thick-film resistor paste that resistance value is 100 Ω/ mix.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 100 Ω/~1k Ω/, the resistance Slurry is made by the thick-film resistor paste that resistance value is 100 Ω/ and the thick-film resistor paste that resistance value is 1k Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 100 Ω/ and resistance value is 1k Ω/ includes solid phase The weight ratio of ingredient and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35 ~75:25~65；
The thick-film resistor paste that the resistance value is 100 Ω/ includes at least one of solid-phase component g and solid-phase component h；
The solid-phase component g includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO2 20 ~50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass combination Object C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 20~50%, the weight percentage of the glass composition C for 10~ The weight percentage of 40%, the glass composition D are 1~20%；
The solid-phase component h includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO2 20 ~50%, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The solid-phase component i includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component j includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 10~50%, the weight percentage of the glass composition C for 15~ 50%；The inorganic filler includes CuO, MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component j, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage for 0~ 13%.
Use above-mentioned 100 Ω/ thick-film resistor paste and resistance value be 1k Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, need not prepare intermediate resistance value shelves again, reduce life Production manufacture cost.
By controlling thick-film resistor paste and the resistance value of 100 Ω/ as the glass phase in the thick-film resistor paste of 1k Ω/ With the glass phase constituent of conductive phase so that glass phase each component can control within the specific limits after mixing, while control conduction The variation ratio of phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of preparations for the thick-film resistor paste that above-mentioned Standard resistance range is 100 Ω/~1k Ω/ Method, the thick-film resistor paste that the Standard resistance range is 100 Ω/~1k Ω/ use thick film electricity of the resistance value for 100 Ω/ Resistance paste and the thick-film resistor paste that resistance value is 1k Ω/ mix.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 1k Ω/~10k Ω/, the resistance Slurry is made by the thick-film resistor paste that resistance value is 1k Ω/ and the thick-film resistor paste that resistance value is 10k Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 1k Ω/ and resistance value is 10k Ω/ includes solid phase The weight ratio of ingredient and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35 ~75:25~65；
The thick-film resistor paste that the resistance value is 1k Ω/ includes at least one of solid-phase component i and solid-phase component j；
The solid-phase component i includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component j includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 10~50%, the weight percentage of the glass composition C for 15~ 50%；The inorganic filler includes CuO, MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component j, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage for 0~ 13%；
The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；
The solid-phase component k includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~ 50%th, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 20~ The weight percentage of 50%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component l, the weight percentage of CuO is 0~3%, MnO2Weight percentage for 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage for 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage For 0~13%.
Use above-mentioned 1k Ω/ thick-film resistor paste and resistance value be 10k Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, need not prepare intermediate resistance value shelves again, reduce life Production manufacture cost.
By controlling thick-film resistor paste and the resistance value of 1k Ω/ as the glass phase in the thick-film resistor paste of 10k Ω/ With the glass phase constituent of conductive phase so that glass phase each component can control within the specific limits after mixing, while control conduction The variation ratio of phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of preparations for the thick-film resistor paste that above-mentioned Standard resistance range is 1k Ω/~10k Ω/ Method, the thick-film resistor paste that the Standard resistance range is 1k Ω/~10k Ω/ use thick-film resistor of the resistance value for 1k Ω/ Slurry and the thick-film resistor paste that resistance value is 10k Ω/ mix.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 10k Ω/~100k Ω/, the electricity Resistance paste is made by the thick-film resistor paste that resistance value is 10k Ω/ and the thick-film resistor paste that resistance value is 100k Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 10k Ω/ and resistance value is 100k Ω/ includes solid The weight ratio of phase constituent and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent= 35~75:25~65；
The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；
The solid-phase component k includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~ 50%th, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 20~ The weight percentage of 50%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component l, the weight percentage of CuO is 0~3%, MnO2Weight percentage for 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage for 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage For 0~13%；
The resistance value is that the thick-film resistor paste of 100k Ω/ includes at least one in solid-phase component m and solid-phase component n Kind；
The solid-phase component m includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~ 50%th, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 30~60%, and the weight percentage of the glass composition C is 10~30%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component n, the weight percentage of CuO is 0~3%, MnO2Weight percentage for 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage for 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage For 0~13%.
It uses the thick-film resistor paste of above-mentioned 10k Ω/ and thick-film resistor paste that resistance value is 100k Ω/ is arbitrarily to compare After example mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance It is worth the mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, intermediate resistance value shelves need not be prepared again, reduced Manufacturing cost.
By controlling thick-film resistor paste and the resistance value of 10k Ω/ as the glass in the thick-film resistor paste of 100k Ω/ The glass phase constituent of phase and conductive phase so that glass phase each component can control within the specific limits after mixing, while control is led The variation ratio of electric phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of systems for the thick-film resistor paste that above-mentioned Standard resistance range is 10k Ω/~100k Ω/ Preparation Method, the thick-film resistor paste that the Standard resistance range is 10k Ω/~100k Ω/ use thickness of the resistance value for 10k Ω/ Film resistance slurry and the thick-film resistor paste that resistance value is 100k Ω/ mix.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 100k Ω/~1M Ω/, the resistance Slurry is made by the thick-film resistor paste that resistance value is 100k Ω/ and the thick-film resistor paste that resistance value is 1M Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 100k Ω/ and resistance value is 1M Ω/ includes solid The weight ratio of phase constituent and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent= 35~75:25~65；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component m and solid-phase component n；
The solid-phase component m includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~ 50%th, glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 30~60%, and the weight percentage of the glass composition C is 10~30%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4In at least one Kind；In the solid-phase component n, the weight percentage of CuO is 0~3%, MnO2Weight percentage for 0~3%, Nb2O5Weight percentage be 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage for 0~ 5%, TiO2Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage For 0~13%；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；
The solid-phase component o includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component p includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 30~60%, the weight percentage of the glass composition C for 10~ 20%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component p, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage for 0~ 13%.
It uses the thick-film resistor paste of above-mentioned 100k Ω/ and thick-film resistor paste that resistance value is 1M Ω/ is arbitrarily to compare After example mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance It is worth the mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, intermediate resistance value shelves need not be prepared again, reduced Manufacturing cost.
By controlling thick-film resistor paste and the resistance value of 100k Ω/ as the glass in the thick-film resistor paste of 1M Ω/ The glass phase constituent of phase and conductive phase so that glass phase each component can control within the specific limits after mixing, while control is led The variation ratio of electric phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of systems for the thick-film resistor paste that above-mentioned Standard resistance range is 100k Ω/~1M Ω/ Preparation Method, the thick-film resistor paste that the Standard resistance range is 100k Ω/~1M Ω/ use thickness of the resistance value for 100k Ω/ Film resistance slurry and the thick-film resistor paste that resistance value is 1M Ω/ mix.
The present invention also provides the thick-film resistor paste that a kind of Standard resistance range is 1M Ω/~10M Ω/, the resistance Slurry is made by the thick-film resistor paste that resistance value is 1M Ω/ and the thick-film resistor paste that resistance value is 10M Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 1M Ω/ and resistance value is 10M Ω/ includes solid phase The weight ratio of ingredient and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35 ~75:25~65；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；
The solid-phase component o includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component p includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 30~60%, the weight percentage of the glass composition C for 10~ 20%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component p, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage for 0~ 13%；
The thick-film resistor paste that the resistance value is 10M Ω/ includes at least one of solid-phase component q and solid-phase component r；
The solid-phase component q includes the component of following weight percentage：RuO20~5%, Pb2Ru2O610~40% With glass composition 50~80%；The glass composition include glass composition A, glass composition B, glass composition C and Glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 40~60%, and the weight percentage of the glass composition C is 10~20%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component r includes the component of following weight percentage：RuO20~5%, Pb2Ru2O610~40%, Glass composition 50~80% and inorganic filler 0.1~32%；The glass composition includes glass composition A, glass combination Object B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, The weight percentage of the glass composition B is 40~60%, the weight percentage of the glass composition C for 10~ 20%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of； In the solid-phase component r, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2 Weight percentage be 0~1%, ZrO2Weight percentage be 0~2%, ZrSiO4Weight percentage for 0~ 13%.
Use above-mentioned 0.1 Ω/ thick-film resistor paste and resistance value be 1 Ω/ thick-film resistor paste with arbitrary proportion After mixing, the electrical property of obtained resistance slurry will not all deteriorate, and have good mixed performance, and by adjusting adjacent resistance value The mixed proportion of shelves, can obtain any resistance value between adjacent two grades of resistance values, need not prepare intermediate resistance value shelves again, reduce life Production manufacture cost.
By controlling thick-film resistor paste and the resistance value of 1M Ω/ as the glass phase in the thick-film resistor paste of 10M Ω/ With the glass phase constituent of conductive phase so that glass phase each component can control within the specific limits after mixing, while control conduction The variation ratio of phase avoids adjacent two grades of conductive phases from larger ratio great disparity occur as far as possible.
Preferably, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=50~ 70：30~50.
Preferably, organic phase constituent includes resin and solvent, in organic phase constituent, the weight percent of resin Content is 0~20%.
The resin can volatilize decomposition completely at 400~600 DEG C；The solvent is equal in 100~400 DEG C of evaporation curve It is even, it will not so cause to generate slight crack or bubble on the resin of film forming, it is defective so as to cause sintering rear surface appearance.It is described Solvent can be selected from terpinol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate, phthalic acid two Ethyl ester and dioctyl phthalate.
Preferably, the resin is at least one in methylcellulose, ethyl cellulose, acrylic resin and epoxy resin Kind.
The present invention also provides a kind of preparations for the thick-film resistor paste that above-mentioned Standard resistance range is 1M Ω/~10M Ω/ Method, the thick-film resistor paste that the Standard resistance range is 1M Ω/~10M Ω/ use thick-film resistor of the resistance value for 1M Ω/ Slurry and the thick-film resistor paste that resistance value is 10M Ω/ mix.
The beneficial effects of the present invention are：The present invention provides a kind of thick-film resistor paste, thick-film resistor of the present invention Can by mix 0.1 Ω/~10M Ω/ in the range of 0.1 Ω/, 1 Ω/, 10 Ω/, 100 Ω/, 1k Ω/, 10k Ω/, 100k Ω/, the thick-film resistor paste of the adjacent resistance value shelves of 1M Ω/ and 10M Ω/ nine obtain adjacent resistance value Between arbitrary resistance value, adjacent resistance value shelves slurry mixing have good mixed performance, electrical property will not deteriorate after mixing, tool Body is embodied in：(1) obtained resistance can be maintained at TCR in ± 100ppm after mixing, especially in 820 DEG C~880 DEG C sintering temperature Under degree, still ensure that TCR in ± 100ppm；(2) antistatic property is between two resistance value shelves after mixing, without being more than mixing Two resistance value shelves.The resistance slurry that the resistance slurry of adjacent resistance value shelves is mixed to get with arbitrary ratio, low-resistance section (0.1 Ω, 1 Ω, 10 Ω), bullion content is less than commercial product, but performance is suitable, thus it is at low cost, there is higher cost performance, significantly Reduce production cost.
Specific embodiment
To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment to the present invention It is described further.
Embodiment 1
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：Ag 20%, Pd 65% and glass composition 15%；Institute It states glass composition and includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass group It closes in object, the weight percentage of the glass composition A is 5%, and the weight percentage of the glass composition B is The weight percentage of 24%, the glass composition C are 70%, and the weight percentage of the glass composition D is 1%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 15%, SrO 20%th, Na2O10%, K2O 10%, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 2
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
Solid-phase component includes the component of following weight percentage：Ag 60%, Pd 5%, RuO220% and glass combination Object 15%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 20%, the weight hundred of the glass composition B It is 50% to divide content, and the weight percentage of the glass composition C is 20%, and the weight percent of the glass composition D contains It measures as 10%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO275%th, Al2O315% and B2O3 10%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 3
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
Solid-phase component includes the component of following weight percentage：Ag 60%, Pd 15%, RuO220% and glass group Close object 5%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 20%, the weight hundred of the glass composition B It is 50% to divide content, and the weight percentage of the glass composition C is 20%, and the weight percent of the glass composition D contains It measures as 10%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO240%th, K2O 10%, Al2O3 15%th, B2O325% and ZnO 10%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is CuO and MnO2Mixture.
Embodiment 4
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component of following weight percentage：Ag 20%, Pd 40%, RuO210%th, glass Composition 20% and inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 20%, the glass composition B's Weight percentage is 50%, and the weight percentage of the glass composition C is 30%；The inorganic filler include CuO, MnO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 2%, MnO2Weight percentage for 3%, ZrSiO4Weight percentage be 5%；
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 5
A kind of embodiment of 0.1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：Ag 55%, Pd 13%, glass composition 5% With inorganic filler 27%；The glass composition includes glass composition A, glass composition B and glass composition C；Described In glass composition, the weight percentage of the glass composition A is 5%, the weight percentage of the glass composition B For 25%, the weight percentage of the glass composition C is 70%；The inorganic filler includes CuO, MnO2、Nb2O5、 SiO2、TiO2、ZrO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percent contain It measures as 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, K2O 8%, Al2O312%th, B2O310% and ZnO 10%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 6
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste described in the present embodiment include The weight ratio of solid-phase component and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent =35:65；
Solid-phase component includes the component of following weight percentage：Ag 20%, Pd 50% and glass composition 30%；Institute It states glass composition and includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass group It closes in object, the weight percentage of the glass composition A is 30%, and the weight percentage of the glass composition B is The weight percentage of 30%, the glass composition C are 30%, and the weight percentage of the glass composition D is 10%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 7
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste described in the present embodiment include The weight ratio of solid-phase component and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent =75:25；
The solid-phase component includes the component of following weight percentage：Ag 50%, Pd 5%, RuO25% and glass Composition 40%；The glass composition includes glass composition A, glass composition C and glass composition D；In the glass In composition, the weight percentage of the glass composition A is 29%, and the weight percentage of the glass composition C is The weight percentage of 70%, the glass composition D are 1%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 8
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste described in the present embodiment include The weight ratio of solid-phase component and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent =75:25；
The solid-phase component includes the component of following weight percentage：Ag 40%, Pd 20% and glass composition 40%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；Institute It states in glass composition, the weight percentage of the glass composition A is 30%, the weight percent of the glass composition B Content is 20%, and the weight percentage of the glass composition C is 45%, the weight percentage of the glass composition D For 5%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 35%, SrO 10%th, Na2O10%, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is MnO2。
Embodiment 9
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste described in the present embodiment include The weight ratio of solid-phase component and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent =50:50；
The solid-phase component includes the component of following weight percentage：Ag 20%, Pd 40%, RuO210%th, glass Composition 20% and inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 10%, the glass composition B's Weight percentage is 30%, and the weight percentage of the glass composition C is 60%；The inorganic filler include CuO, MnO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 2%, MnO2Weight percentage for 3%, ZrSiO4Weight percentage be 5%；
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 10
A kind of embodiment of 1 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste described in the present embodiment include The weight ratio of solid-phase component and organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent =60:40；
The solid-phase component includes the component of following weight percentage：Ag550%, Pd 13%, glass composition 5% With inorganic filler 27%；The glass composition includes glass composition A and glass composition C；In the glass composition, The weight percentage of the glass composition A is 30%, and the weight percentage of the glass composition C is 70%；It is described Inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4；In the solid-phase component, the weight hundred of CuO It is 3%, MnO to divide content2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percent contain It measures as 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 11
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：Ag 10%, Pd 20%, RuO220% and glass group Close object 50%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 10%, the weight of the glass composition B Percentage composition is 40%, and the weight percentage of the glass composition C is 30%, the weight percent of the glass composition D Content is 20%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 12
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：Ag 30%, RuO250% and glass composition 20%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；Institute It states in glass composition, the weight percentage of the glass composition A is 40%, the weight percent of the glass composition B Content is 10%, and the weight percentage of the glass composition C is 40%, the weight percentage of the glass composition D For 10%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 15%, Al2O3 15%th, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 13
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：Ag 40%, Pd 20%, RuO220% and glass Glass composition 20%；The glass composition includes glass composition A, glass composition B, glass composition C and glass combination Object D；In the glass composition, the weight percentage of the glass composition A is 19%, the glass composition B's Weight percentage is 10%, and the weight percentage of the glass composition C is 70%, the weight of the glass composition D Percentage composition is 1%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO275%th, Na2O 10%, K2O 10%th, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is MnO2。
Embodiment 14
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component of following weight percentage：Ag 13%, RuO240%th, glass composition 20% and inorganic filler 27%；The glass composition includes glass composition A, glass composition B and glass composition C； In the glass composition, the weight percentage of the glass composition A is 10%, the weight hundred of the glass composition B It is 40% to divide content, and the weight percentage of the glass composition C is 50%；The inorganic filler includes MnO2、Nb2O5、 SiO2、ZrO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, TiO2Weight percentage for 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 15
A kind of embodiment of 10 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：Ag 20%, Pd 20%, RuO220%th, glass Composition 20% and inorganic filler 20%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 40%, the glass composition B's Weight percentage is 10%, and the weight percentage of the glass composition C is 50%；The inorganic filler include CuO, MnO2、ZrO2And ZrSiO4；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 12%.
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 16
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：RuO250% and glass composition 50%；The glass Composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass composition In, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 30%, institute The weight percentage for stating glass composition C is 40%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 17
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：Ag 20%, Pd 10%, RuO220% and glass Glass composition 50%；The glass composition includes glass composition A, glass composition B, glass composition C and glass combination Object D；In the glass composition, the weight percentage of the glass composition A is 40%, the glass composition B's Weight percentage is 30%, and the weight percentage of the glass composition C is 10%, the weight of the glass composition D Percentage composition is 20%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 15%, SrO 5%, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 18
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：Ag 10%, Pd 10%, RuO250% and glass Glass composition 30%；The glass composition includes glass composition A, glass composition B, glass composition C and glass combination Object D；In the glass composition, the weight percentage of the glass composition A is 14%, the glass composition B's Weight percentage is 50%, and the weight percentage of the glass composition C is 35%, the weight of the glass composition D Percentage composition is 1%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO275%th, SrO 10%, Na2O 10%th, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5。
Embodiment 19
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component of following weight percentage：RuO250%th, glass composition 30% and inorganic Filler 20%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass group It closes in object, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is The weight percentage of 30%, the glass composition C are 30%；The inorganic filler is CuO, Nb2O5、TiO2、ZrO2With ZrSiO4Mixture, in the solid-phase component, the weight percentage of CuO is 3%, Nb2O5Weight percentage be 3%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 11%.
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 20
A kind of embodiment of 100 Ω of the present invention/ thick-film resistor pastes, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：Ag 20%, Pd 10%, RuO220%th, glass Composition 10% and inorganic filler 27%；The glass composition includes glass composition A, glass composition B and glass combination Object C；In the glass composition, the weight percentage of the glass composition A is 40%, the glass composition B's Weight percentage is 20%, and the weight percentage of the glass composition C is 40%；The inorganic filler for CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage for 2%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 13%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 21
A kind of embodiment of 1k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：RuO25%th, Pb2Ru2O630% and glass composition 65%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；Institute It states in glass composition, the weight percentage of the glass composition A is 10%, the weight percent of the glass composition B Content is 50%, and the weight percentage of the glass composition C is 20%, the weight percentage of the glass composition D For 20%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 22
A kind of embodiment of 1k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO230% and glass composition 70%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is 10%, The weight percentage of the glass composition C is 45%, and the weight percentage of the glass composition D is 5%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 15%, Al2O3 15%th, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 23
A kind of embodiment of 1k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO25%th, Pb2Ru2O615% and glass group Close object 80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 10%, the weight of the glass composition B Percentage composition is 39%, and the weight percentage of the glass composition C is 50%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO275%th, SrO 10%, Na2O 10%th, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 24
A kind of embodiment of 1k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component of following weight percentage：RuO230%th, Pb2Ru2O610%th, glass group Close object 50% and inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A is 10%, the weight of the glass composition B It is 50% to measure percentage composition, and the weight percentage of the glass composition C is 40%；The inorganic filler is CuO, ZrO2With ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 7%.
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 25
A kind of embodiment of 1k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：RuO25%th, glass composition 63% and inorganic Filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass group It closes in object, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is The weight percentage of 10%, the glass composition C are 50%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2's Weight percentage is 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percent Content is 13%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 26
A kind of embodiment of 10k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：Pb2Ru2O650% and glass composition 50%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 20%, and the weight percentage of the glass composition B is 20%, The weight percentage of the glass composition C is 40%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 27
A kind of embodiment of 10k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO220%th, Pb2Ru2O610% and glass group Close object 70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 50%, the weight of the glass composition B Percentage composition is 39%, and the weight percentage of the glass composition C is 10%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 15%, Al2O3 15%th, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 28
A kind of embodiment of 10k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO210%th, Pb2Ru2O610% and glass group Close object 80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 45%, the weight of the glass composition B Percentage composition is 35%, and the weight percentage of the glass composition C is 10%, the weight percent of the glass composition D Content is 10%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO275%th, Na2O 10%, K2O 10%th, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 29
A kind of embodiment of 10k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component Pb of following weight percentage2Ru2O618%th, glass composition 50% and nothing Machine filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In composition, the weight percentage of the glass composition A is 20%, and the weight percentage of the glass composition B is The weight percentage of 50%, the glass composition C are 30%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4In mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2 Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Amount percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight hundred It is 13% to divide content；
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 30
A kind of embodiment of 10k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：RuO25%th, Pb2Ru2O610%th, glass combination Object 80% and inorganic filler 5%；The glass composition includes glass composition A, glass composition B and glass composition C； In the glass composition, the weight percentage of the glass composition A is 50%, the weight hundred of the glass composition B It is 20% to divide content, and the weight percentage of the glass composition C is 30%；The inorganic filler is CuO and MnO2It is mixed Close object；In the solid-phase component, the weight percentage of CuO is 2%, MnO2Weight percentage be 3%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 31
A kind of embodiment of 100k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase Ingredient=35:65；
Solid-phase component includes the component of following weight percentage：Pb2Ru2O620% and glass composition 80%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 60%, The weight percentage of the glass composition C is 10%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 32
A kind of embodiment of 100k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase Ingredient=75:25；
The solid-phase component includes the component of following weight percentage：RuO210%th, Pb2Ru2O620% and glass group Close object 70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 34%, and the weight percentage of the glass composition C is 25%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 5%, Na2O 10%, Al2O315%th, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 33
A kind of embodiment of 100k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase Ingredient=75:25；
The solid-phase component includes the component of following weight percentage：Pb2Ru2O650% and glass composition 50%； The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass In composition, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is The weight percentage of 60%, the glass composition C are 20%, and the weight percentage of the glass composition D is 10%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO275%th, SrO 10%, K2O 10%, Al2O31%th, B2O31% and ZnO 3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 34
A kind of embodiment of 100k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase Ingredient=50:50；
The solid-phase component includes the component of following weight percentage：Pb2Ru2O618%th, 50% and of glass composition Inorganic filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In glass composition, the weight percentage of the glass composition A is 10%, the weight percentage of the glass composition B For 60%, the weight percentage of the glass composition C is 30%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4In mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2 Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Amount percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight hundred It is 13% to divide content；The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 35
A kind of embodiment of 100k Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste described in the present embodiment Comprising solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase Ingredient=60:40；
The solid-phase component includes the component of following weight percentage：RuO210%th, Pb2Ru2O625%th, glass group Close object 60% and inorganic filler 5%；The glass composition includes glass composition A, glass composition B and glass composition C； In the glass composition, the weight percentage of the glass composition A is 30%, the weight of the glass composition B Percentage composition is 60%, and the weight percentage of the glass composition C is 10%；The inorganic filler is MnO2And ZrSiO4 Mixture；In the solid-phase component, MnO2Weight percentage be 2%, ZrSiO4Weight percentage be 3%.
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 36
A kind of embodiment of 1M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：Pb2Ru2O650% and glass composition 50%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 60%, The weight percentage of the glass composition C is 20%, and the weight percentage of the glass composition D is 10%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 37
A kind of embodiment of 1M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO210%th, Pb2Ru2O620% and glass group Close object 70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 44%, and the weight percentage of the glass composition C is 15%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 15%, Al2O3 15%th, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 38
A kind of embodiment of 1M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO215%th, Pb2Ru2O635% and glass group Close object 60%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 20%, and the weight percentage of the glass composition C is 25%, the weight percent of the glass composition D Content is 15%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO275%th, Na2O 10%, K2O 10%th, Al2O31%th, B2O31% and ZnO3%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 39
A kind of embodiment of 1M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component of following weight percentage：Pb2Ru2O645%th, 50% and of glass composition Inorganic filler 5%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In composition, the weight percentage of the glass composition A is 40%, and the weight percentage of the glass composition B is The weight percentage of 30%, the glass composition C are 20%；The inorganic filler includes Nb2O5；In the solid-phase component In, Nb2O5Weight percentage for 3%, Ta2O5Weight percentage be 2%；
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 40
A kind of embodiment of 1M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：、Pb2Ru2O618%th, 50% and of glass composition Inorganic filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In glass composition, the weight percentage of the glass composition A is 10%, the weight percentage of the glass composition B For 60%, the weight percentage of the glass composition C is 30%；The inorganic filler is CuO, MnO2、Nb2O5、SiO2、 Ta2O5、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2's Weight percentage is 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage be 2%, Ta2O5Weight Percentage composition is 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4Weight percent Content is 13%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%th, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 41
A kind of embodiment of 10M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=35:65；
Solid-phase component includes the component of following weight percentage：Pb2Ru2O610% and glass composition 90%；It is described Glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass combination In object, the weight percentage of the glass composition A is 10%, and the weight percentage of the glass composition B is 60%, The weight percentage of the glass composition C is 10%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage：PbO 10%, SiO235%th, CaO 30%th, Al2O320% and B2O35%；
The glass composition B includes the component of following weight percentage：SiO240%th, SrO 20%, Na2O 10%th, K2O10%, Al2O35%th, B2O35% and ZnO10%；
The glass composition C includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% He B2O31%；
The glass composition D includes the component of following weight percentage：PbO 60%, SiO210%th, Al2O3 8%th, B2O32% and transition metal oxide 20%, the transition metal oxide is CuO, MnO2、Nb2O5、Ta2O5、TiO2With ZrO2Mixture.
Embodiment 42
A kind of embodiment of 10M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：RuO25%th, Pb2Ru2O635% and glass group Close object 60%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 49%, and the weight percentage of the glass composition C is 10%, the weight percent of the glass composition D Content is 1%；
The glass composition A includes the component of following weight percentage：PbO 50%, SiO235%th, CaO 5%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO240%th, BaO 15%, Al2O3 15%th, B2O325% and ZnO 5%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 88%, SiO210%th, Al2O31% And B2O31%.
Embodiment 43
A kind of embodiment of 10M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=75:25；
The solid-phase component includes the component of following weight percentage：Pb2Ru2O640% and glass composition 60%； The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass In composition, the weight percentage of the glass composition A is 20%, and the weight percentage of the glass composition B is The weight percentage of 40%, the glass composition C are 20%, and the weight percentage of the glass composition D is 20%；
The glass composition A includes the component of following weight percentage：PbO 30%, SiO240%th, CaO 5%, Al2O35%th, B2O310% and ZnO 10%；
The glass composition B includes the component of following weight percentage：SiO270%th, SrO 10%, K2O 10%, Al2O31%th, B2O31% and ZnO 8%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O31%th, B2O39% and ZnO 10%；
The glass composition D includes the component of following weight percentage：PbO 50%, SiO228%th, Al2O3 8%th, B2O36% and transition metal oxide 8%, the transition metal oxide is Ta2O5、TiO2And ZrO2Mixture.
Embodiment 44
A kind of embodiment of 10M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=50:50；
The solid-phase component includes the component of following weight percentage：Pb2Ru2O610%th, 80% and of glass composition Inorganic filler 10%；The glass composition includes glass composition A, glass composition B and glass composition C；In the glass In glass composition, the weight percentage of the glass composition A is 40%, the weight percentage of the glass composition B For 40%, the weight percentage of the glass composition C is 20%；The inorganic filler is ZrO2And ZrSiO4Mixture； In the solid-phase component, ZrO2Weight percentage be 2%, ZrSiO4Weight percentage be 8%.
The glass composition A includes the component of following weight percentage：PbO 20%, SiO235%th, CaO 22%th, Al2O310%th, B2O35% and ZnO 8%；
The glass composition B includes the component of following weight percentage：SiO260%th, BaO 12%, SrO 8%, Na2O10%, K2O 2%, Al2O35%th, B2O32% and ZnO 1%；
The glass composition C includes the component of following weight percentage：PbO 71%, SiO210%th, Al2O37%th, B2O36% and ZnO 6%.
Embodiment 45
A kind of embodiment of 10M Ω/ thick-film resistor pastes of the present invention, thick-film resistor paste bag described in the present embodiment Containing solid-phase component and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：It is organic to coordinate Divide=60:40；
The solid-phase component includes the component of following weight percentage：RuO28%th, Pb2Ru2O610%th, glass combination Object 50% and inorganic filler 32%；The glass composition includes glass composition A, glass composition B and glass composition C； In the glass composition, the weight percentage of the glass composition A is 40%, the weight of the glass composition B Percentage composition is 50%, and the weight percentage of the glass composition C is 10%；The inorganic filler is CuO, MnO2、 Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4Mixture；In the solid-phase component, the weight percentage of CuO is 3%, MnO2Weight percentage be 3%, Nb2O5Weight percentage be 3%, SiO2Weight percentage for 2%, Ta2O5Weight percentage be 5%, TiO2Weight percentage be 1%, ZrO2Weight percentage be 2%, ZrSiO4 Weight percentage be 13%；The glass composition A includes the component of following weight percentage：PbO 10%, SiO240%th, CaO 30%, Al2O310%th, B2O35% and ZnO 5%；
The glass composition B includes the component of following weight percentage：SiO250%th, BaO 10%, SrO 14%th, Na2O8%, K2O 3%, Al2O35%th, B2O34% and ZnO 6%；
The glass composition C includes the component of following weight percentage：PbO 50%, SiO230%th, Al2O310%th, B2O38% and ZnO 2%.
Embodiment 46
A kind of embodiment of 0.46 Ω of the present invention/ thick-film resistor pastes, 0.1 Ω/ thick films as described in embodiment 1 1 Ω/ thick-film resistor pastes described in resistance slurry and embodiment 6 press 1:1 weight ratio is mixed to prepare.
Embodiment 47
A kind of embodiment of 0.63 Ω of the present invention/ thick-film resistor pastes, 0.1 Ω/ thick films as described in embodiment 5 1 Ω/ thick-film resistor pastes described in resistance slurry and embodiment 9 press 1:4 weight ratio is mixed to prepare.
Embodiment 48
A kind of embodiment of 5.9 Ω of the present invention/ thick-film resistor pastes, 1 Ω/ thick films electricity as described in embodiment 5 10 Ω/ thick-film resistor pastes described in resistance paste and embodiment 13 press 3:7 weight ratio is mixed to prepare.
Embodiment 49
A kind of embodiment of 2.3 Ω of the present invention/ thick-film resistor pastes, 1 Ω/ thick films electricity as described in embodiment 9 10 Ω/ thick-film resistor pastes described in resistance paste and embodiment 11 press 7:3 weight ratio is mixed to prepare.
Embodiment 50
A kind of embodiment of 81.3 Ω of the present invention/ thick-film resistor pastes, 10 Ω/ thick films as described in embodiment 11 100 Ω/ thick-film resistor pastes described in resistance slurry and embodiment 19 press 1:4 weight ratio is mixed to prepare.
Embodiment 51
A kind of embodiment of 15.9 Ω of the present invention/ thick-film resistor pastes, 10 Ω/ thick films as described in embodiment 13 100 Ω/ thick-film resistor pastes described in resistance slurry and embodiment 17 press 4:1 weight ratio is mixed to prepare.
Embodiment 52
A kind of embodiment of 823.1 Ω of the present invention/ thick-film resistor pastes, 100 Ω/ is thick as described in embodiment 17 1k Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 21 press 1:9 weight ratio is mixed to prepare.
Embodiment 53
A kind of embodiment of 134.8 Ω of the present invention/ thick-film resistor pastes, 100 Ω/ is thick as described in embodiment 19 1k Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 24 press 9:1 weight ratio is mixed to prepare.
Embodiment 54
A kind of embodiment of 4.12k Ω/ thick-film resistor pastes of the present invention, 1k Ω/ are thick as described in embodiment 21 10k Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 30 press 1:1 weight ratio is mixed to prepare.
Embodiment 55
A kind of embodiment of 7.48k Ω/ thick-film resistor pastes of the present invention, 1k Ω/ are thick as described in embodiment 24 10k Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 27 press 1:4 weight ratio is mixed to prepare.
Embodiment 56
A kind of embodiment of 72.8k Ω/ thick-film resistor pastes of the present invention, 10k Ω/ are thick as described in embodiment 30 100k Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 31 press 3:7 weight ratio is mixed to prepare.
Embodiment 57
A kind of embodiment of 24.3k Ω/ thick-film resistor pastes of the present invention, 10k Ω/ are thick as described in embodiment 30 100k Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 35 press 7:3 weight ratio is mixed to prepare.
Embodiment 58
A kind of embodiment of 671.7k Ω/ thick-film resistor pastes of the present invention, 100k Ω/ as described in embodiment 31 1M Ω/ thick-film resistor pastes described in thick-film resistor paste and embodiment 40 press 1:4 weight ratio is mixed to prepare.
Embodiment 59
A kind of embodiment of 187.9k Ω/ thick-film resistor pastes of the present invention, 100k Ω/ as described in embodiment 35 1M Ω/ thick-film resistor pastes described in thick-film resistor paste and embodiment 40 press 4:1 weight ratio is mixed to prepare.
Embodiment 60
A kind of embodiment of 7.97M Ω/ thick-film resistor pastes of the present invention, 1M Ω/ are thick as described in embodiment 40 10M Ω/ thick-film resistor pastes described in film resistance slurry and embodiment 45 press 1:9 weight ratio is mixed to prepare.
Embodiment 61
A kind of embodiment of 4.1M Ω/ thick-film resistor pastes of the present invention, 1M Ω/ thick films as described in embodiment 40 10M Ω/ thick-film resistor pastes described in resistance slurry and embodiment 45 press 4:6 weight ratio is mixed to prepare.
Comparative example 1
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 0.1 Ω/ are starched Material.
Comparative example 2
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 1 Ω/ are starched Material.
Comparative example 3
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 10 Ω/ are starched Material.
Comparative example 4
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 100 Ω/ are starched Material.
Comparative example 5
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 1k Ω/ are starched Material.
Comparative example 6
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 10k Ω/ are starched Material.
Comparative example 7
A kind of comparative example of thick-film resistor paste of the present invention, this comparative example are the thick-film resistor of commercially available 100k Ω/ Slurry.
Comparative example 8
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 1M Ω/ are starched Material.
Comparative example 9
A kind of comparative example of thick-film resistor paste of the present invention, the thick-film resistor that this comparative example is commercially available 10M Ω/ are starched Material.
Comparative example 10
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 1k Ω/ is with 1 described in the thick-film resistor paste of 4 100 Ω/ and comparative example 5：9 weight ratio is mixed It closes and obtains.
Comparative example 11
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 10k Ω/ is with 1 described in the thick-film resistor paste of the 5 1k Ω/ and comparative example 6：4 weight ratio is mixed It closes and obtains.
Comparative example 12
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 100k Ω/ is with 7 described in the thick-film resistor paste of the 6 10k Ω/ and comparative example 7：3 weight ratio It is obtained by mixing.
Comparative example 13
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 1Mk Ω/ is with 1 described in the thick-film resistor paste of the 7 100k Ω/ and comparative example 8：4 weight ratio It is obtained by mixing.
Comparative example 14
A kind of comparative example of thick-film resistor paste of the present invention, thick-film resistor paste described in this comparative example are by comparative example The thick-film resistor paste of 10Mk Ω/ is with 1 described in the thick-film resistor paste of the 8 1M Ω/ and comparative example 9：9 weight ratio is mixed It closes and obtains.
Embodiment 62
Thick-film resistor paste described in embodiment and comparative example is made to sheet resistance value, the cold resistance temperature of resistance and test resistance Coefficient value (CTCR), heat resistance temperature coefficient value (HTCR), temperature-coefficient of electrical resistance width (TCR width=HTCR-CTCR), ESD, Wherein, 0.1 Ω, the test of 1 Ω resistance values are 300 side's figures, and the test of other resistance values is 1 side's figure, cun 0.5mm*0.5mm per square chi, Each test group takes 30 samples to be tested, and is averaged, wherein,
R-55℃、R25℃、R155℃The resistance value that temperature measures for -55 DEG C, 25 DEG C, 155 DEG C of conditions is represented respectively.The test of ESD Condition is：Size is 0.5mm*0.5mm, is discharged under the conditions of ± 3kV resistance, is respectively that 3kV discharges 3 times, then -3kV is put Electricity 3 times, each interval time is 1s, the resistance value before record test and after test.Thick film described in each embodiment and comparative example The test result of resistance made of resistance slurry is shown in Table 1.
The test of resistance made of thick-film resistor paste described in 1 each embodiment of table and comparative example
From table 1 it follows that embodiment 46~61 is to be starched using the thick-film resistor of two kinds of adjacent resistance values of the present invention Expect the thick-film resistor paste mixed, the resistance TCR being prepared is relatively stable, and ESD is between the thick-film resistor of adjacent resistance value Explanation is by the mixing of the adjacent resistance value of thick-film resistor paste of the present invention between slurry, the electrical property of the slurry after obtaining between Between the thick-film resistor paste of adjacent resistance value.
Ag, Pd, RuO of 1~3 thick-film resistor paste of test comparison example2Etc. bullion contents, and test 1~9 described in Sheet resistance value, TCR, ESD performance under the different temperatures of thick-film resistor paste；Test comparison example 10 and embodiment 52, comparative example 11 With thick film electricity described in embodiment 55, comparative example 12 and embodiment 57, comparative example 13 and embodiment 58, comparative example 14 and embodiment 60 Sheet resistance value, TCR, ESD performance of resistance paste at different temperatures, test result are shown in Table 2 and table 3.
The performance test of 2 comparative example of table, 1~9 thick-film resistor paste
The mixed performance test comparison of thick-film resistor paste described in 3 comparative example of table and embodiment
From table 2 it can be seen that for low resistance shelves, in the case where performance is roughly the same, due to formula of the present invention Bullion content is lower, thus it is at low cost, there is higher cost performance；High value shelves, performance are better than commercial product.In table 3, from right It is ratio 10 and embodiment 52, comparative example 11 and embodiment 55, comparative example 12 and embodiment 57, comparative example 13 and embodiment 58, right The comparison of ratio 14 and embodiment 60 is adopted as can be seen that compared with the resistance that the adjacent resistance value of commercially available resistance slurry is mixed to get Electrical property with the resistance being mixed to get of the adjacent resistance value of thick-film resistor paste of the present invention is more preferable, and resistance varying-ratio is more Low, Thermo-sensitive and TCR relatively stablize, and EDS is smaller, and the various aspects of performance are superior to commercial product.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected The limitation of scope is protected, although being explained in detail with reference to preferred embodiment to the present invention, those of ordinary skill in the art should Understand, technical scheme can be modified or replaced equivalently, without departing from the essence of technical solution of the present invention And scope.

Claims (17)

1. a kind of thick-film resistor paste, which is characterized in that include glass composition；
The glass composition is included in glass composition A, glass composition B, glass composition C and glass composition D extremely It is two kinds few；
The glass composition A includes the component of following weight percentage：PbO 10~50%, SiO235~55%, CaO 5 ~30%, Al2O31~20%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、CaO、Al2O3、B2O3And ZnO The sum of weight percentage in glass composition A is at least 95%；
The glass composition B includes the component of following weight percentage：SiO240~75%, BaO 0~15%, SrO 0 ~20%, Na2O 0~10%, K2O 0~10%, Al2O31~15%, B2O31~25% and ZnO 0~10%, it is described SiO2、BaO、SrO、Na2O、K2O、Al2O3、B2O3It is at least with the sum of weight percentages of the ZnO in glass composition B 95%；
The glass composition C includes the component of following weight percentage：PbO 50~88%, SiO210~30%, Al2O31 ~10%, B2O31~10% and ZnO 0~10%, described PbO, SiO2、Al2O3、B2O3With ZnO in glass composition C The sum of weight percentage is at least 95%；
The glass composition D includes the component of following weight percentage：PbO 60~88%, SiO210~35%, Al2O3 1~10%, B2O31~10% and transition metal oxide 0~20%, the transition metal oxide includes CuO, MnO2、 Nb2O5、Ta2O5、TiO2And ZrO2At least one of.
2. a kind of Standard resistance range be 0.1 Ω/~1 Ω/ thick-film resistor paste, which is characterized in that the resistance slurry by The thick-film resistor paste that resistance value is the thick-film resistor paste of 0.1 Ω/ and resistance value is 1 Ω/ is made；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 0.1 Ω/ and resistance value is 1 Ω/ includes solid-phase component With organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The resistance value is that the solid-phase component of the resistance slurry of 0.1 Ω/ includes at least one in solid-phase component a and solid-phase component b Kind；
The solid-phase component a includes the component of following weight percentage：Ag 20~60%, Pd 5~65%, RuO20~ 20% and glass composition 5~30%；The glass composition includes glass composition A, glass composition B, glass composition C With glass composition D；In the glass composition, the weight percentage of the glass composition A is 5~20%, described The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 30~70%, The weight percentage of the glass composition D is 1~20%；
The solid-phase component b includes the component of following weight percentage：Ag 20~60%, Pd 5~65%, RuO20~ 20%th, glass composition 5~30% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 5~ The weight percentage of 20%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 30~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component b, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 1 Ω/ includes at least one of solid-phase component c and solid-phase component d；
The solid-phase component c includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO20~ 20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass composition C With glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, described The weight percentage of glass composition B is 0~30%, and the weight percentage of the glass composition C is 30~70%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component d includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO20~ 20%th, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2's Weight percentage is 0~2%, ZrSiO4Weight percentage be 0~13%.
3. a kind of Standard resistance range as claimed in claim 2 is the preparation method of the thick-film resistor paste of 0.1 Ω/~1 Ω/, It is characterized in that, the thick-film resistor paste that the Standard resistance range is 0.1 Ω/~1 Ω/ uses thickness of the resistance value for 0.1 Ω/ Film resistance slurry and the thick-film resistor paste that resistance value is 1 Ω/ mix.
4. a kind of Standard resistance range is the thick-film resistor paste of 1 Ω/~10 Ω/, which is characterized in that the resistance slurry is by hindering The thick-film resistor paste that the thick-film resistor paste and resistance value being worth for 1 Ω/ are 10 Ω/ is made；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 1 Ω/ and resistance value is 10 Ω/ include solid-phase component and The weight ratio of organic phase constituent, the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35~75: 25~65；
The thick-film resistor paste that the resistance value is 1 Ω/ includes at least one of solid-phase component c and solid-phase component d；
The solid-phase component c includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO20~ 20% and glass composition 5~40%；The glass composition includes glass composition A, glass composition B, glass composition C With glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~30%, described The weight percentage of glass composition B is 0~30%, and the weight percentage of the glass composition C is 30~70%, institute The weight percentage for stating glass composition D is 1~20%；
The solid-phase component d includes the component of following weight percentage：Ag 20~50%, Pd 5~50%, RuO20~ 20%th, glass composition 5~40% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 30%, the glass composition B are 0~30%, and the weight percentage of the glass composition C is 30 ~70%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Described In solid-phase component d, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Percentage composition is 0~3%, SiO2Weight percentage for 0~2%, TiO2Weight percentage be 0~1%, ZrO2's Weight percentage is 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 10 Ω/ includes at least one of solid-phase component e and solid-phase component f；
The solid-phase component e includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO220~ 50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, institute The weight percentage of glass composition B is stated as 10~40%, the weight percentage of the glass composition C for 20~ The weight percentage of 60%, the glass composition D are 1~20%；
The solid-phase component f includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO220~ 50%th, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is 20~60%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
5. a kind of Standard resistance range as claimed in claim 4 is the preparation method of the thick-film resistor paste of 1 Ω/~10 Ω/, It is characterized in that, the thick-film resistor paste that the Standard resistance range is 1 Ω/~10 Ω/ uses thick film electricity of the resistance value for 1 Ω/ Resistance paste and the thick-film resistor paste that resistance value is 10 Ω/ mix.
6. a kind of Standard resistance range be 10 Ω/~100 Ω/ thick-film resistor paste, which is characterized in that the resistance slurry by The thick-film resistor paste that resistance value is the thick-film resistor paste of 10 Ω/ and resistance value is 100 Ω/ is made；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 10 Ω/ and resistance value is 100 Ω/ includes solid-phase component With organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 10 Ω/ includes at least one of solid-phase component e and solid-phase component f；
The solid-phase component e includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO220~ 50% and glass composition 20~60%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, institute The weight percentage of glass composition B is stated as 10~40%, the weight percentage of the glass composition C for 20~ The weight percentage of 60%, the glass composition D are 1~20%；
The solid-phase component f includes the component of following weight percentage：Ag 10~40%, Pd 0~20%, RuO220~ 50%th, glass composition 20~60% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 10~40%, and the weight percentage of the glass composition C is 20~60%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component f, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 100 Ω/ includes at least one of solid-phase component g and solid-phase component h；
The solid-phase component g includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO220~ 50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, institute The weight percentage of glass composition B is stated as 20~50%, the weight percentage of the glass composition C for 10~ The weight percentage of 40%, the glass composition D are 1~20%；
The solid-phase component h includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO220~ 50%th, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
7. a kind of Standard resistance range as claimed in claim 6 is the preparation method of the thick-film resistor paste of 10 Ω/~100 Ω/, It is characterized in that, the thick-film resistor paste that the Standard resistance range is 10 Ω/~100 Ω/ uses thickness of the resistance value for 10 Ω/ Film resistance slurry and the thick-film resistor paste that resistance value is 100 Ω/ mix.
8. a kind of Standard resistance range be 100 Ω/~1k Ω/ thick-film resistor paste, which is characterized in that the resistance slurry by The thick-film resistor paste that resistance value is the thick-film resistor paste of 100 Ω/ and resistance value is 1k Ω/ is made；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 100 Ω/ and resistance value is 1k Ω/ includes solid-phase component With organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 100 Ω/ includes at least one of solid-phase component g and solid-phase component h；
The solid-phase component g includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO220~ 50% and glass composition 30~70%；The glass composition includes glass composition A, glass composition B, glass composition C and glass composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, institute The weight percentage of glass composition B is stated as 20~50%, the weight percentage of the glass composition C for 10~ The weight percentage of 40%, the glass composition D are 1~20%；
The solid-phase component h includes the component of following weight percentage：Ag 0~20%, Pd 0~10%, RuO220~ 50%th, glass composition 30~70% and inorganic filler 0.1~27%；The glass composition includes glass composition A, glass Composition B and glass composition C；In the glass composition, the weight percentage of the glass composition A for 10~ The weight percentage of 40%, the glass composition B are 20~50%, and the weight percentage of the glass composition C is 10~40%；The inorganic filler includes CuO, MnO2、Nb2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；Institute It states in solid-phase component h, the weight percentage of CuO is 0.1~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight Amount percentage composition is 0~3%, SiO2Weight percentage be 0~2%, TiO2Weight percentage be 0~1%, ZrO2 Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 1k Ω/ includes at least one of solid-phase component i and solid-phase component j；
The solid-phase component i includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30% and glass Composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass group Close object D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass combination The weight percentage of object B is 10~50%, and the weight percentage of the glass composition C is 15~50%, the glass The weight percentage of composition D is 1~20%；
The solid-phase component j includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient j, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
9. a kind of Standard resistance range as claimed in claim 8 is the preparation method of the thick-film resistor paste of 100 Ω/~1k Ω/, It is characterized in that, the thick-film resistor paste that the Standard resistance range is 100 Ω/~1k Ω/ uses resistance value as 100 Ω/ Thick-film resistor paste and the thick-film resistor paste that resistance value is 1k Ω/ mix.
10. a kind of Standard resistance range is the thick-film resistor paste of 1k Ω/~10k Ω/, which is characterized in that the resistance slurry It is made by the thick-film resistor paste that resistance value is 1k Ω/ and the thick-film resistor paste that resistance value is 10k Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 1k Ω/ and resistance value is 10k Ω/ includes solid-phase component With organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 1k Ω/ includes at least one of solid-phase component i and solid-phase component j；
The solid-phase component i includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30% and glass Composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass group Close object D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass combination The weight percentage of object B is 10~50%, and the weight percentage of the glass composition C is 15~50%, the glass The weight percentage of composition D is 1~20%；
The solid-phase component j includes the component of following weight percentage：RuO25~30%, Pb2Ru2O60~30%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 10~50%, and the weight percentage of the glass composition C is 15~50%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、Ta2O5、SiO2、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient j, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；The resistance It is worth and includes at least one of solid-phase component k and solid-phase component l for the thick-film resistor paste of 10k Ω/；
The solid-phase component k includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~50% and glass Glass composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass Composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass group The weight percentage for closing object B is 20~50%, and the weight percentage of the glass composition C is 10~40%, the glass The weight percentage of glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient l, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
11. a kind of Standard resistance range as claimed in claim 10 is the preparation side of the thick-film resistor paste of 1k Ω/~10k Ω/ Method, which is characterized in that the thick-film resistor paste that the Standard resistance range is 1k Ω/~10k Ω/ uses resistance value as 1k Ω/ Thick-film resistor paste and resistance value be 10k Ω/ thick-film resistor paste mix.
12. a kind of Standard resistance range is the thick-film resistor paste of 10k Ω/~100k Ω/, which is characterized in that the resistance slurry Material is made by the thick-film resistor paste that resistance value is 10k Ω/ and the thick-film resistor paste that resistance value is 100k Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 10k Ω/ and resistance value is 100k Ω/ include solid phase into Point and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent be：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 10k Ω/ includes at least one of solid-phase component k and solid-phase component l；
The solid-phase component k includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~50% and glass Glass composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass Composition D；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass group The weight percentage for closing object B is 20~50%, and the weight percentage of the glass composition C is 10~40%, the glass The weight percentage of glass composition D is 1~20%；
The solid-phase component l includes the component of following weight percentage：RuO20~20%, Pb2Ru2O610~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 20~50%, the glass The weight percentage of glass composition B is 20~50%, and the weight percentage of the glass composition C is 10~40%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient l, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 100k Ω/ includes at least one of solid-phase component m and solid-phase component n；
The solid-phase component m includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~50% and glass Glass composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass Composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass group The weight percentage for closing object B is 30~60%, and the weight percentage of the glass composition C is 10~30%, the glass The weight percentage of glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient n, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
13. a kind of Standard resistance range as claimed in claim 12 is the preparation of the thick-film resistor paste of 10k Ω/~100k Ω/ Method, which is characterized in that the Standard resistance range is that the thick-film resistor paste of 10k Ω/~100k Ω/ uses resistance value as 10k The thick-film resistor paste and resistance value of Ω/ is that the thick-film resistor paste of 100k Ω/ mixes.
14. a kind of Standard resistance range is the thick-film resistor paste of 100k Ω/~1M Ω/, which is characterized in that the resistance slurry It is made by the thick-film resistor paste that resistance value is 100k Ω/ and the thick-film resistor paste that resistance value is 1M Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 100k Ω/ and resistance value is 1M Ω/ include solid phase into Point and organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent be：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 100k Ω/ includes at least one of solid-phase component m and solid-phase component n；
The solid-phase component m includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~50% and glass Glass composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass Composition D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass group The weight percentage for closing object B is 30~60%, and the weight percentage of the glass composition C is 10~30%, the glass The weight percentage of glass composition D is 1~20%；
The solid-phase component n includes the component of following weight percentage：RuO20~10%, Pb2Ru2O618~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~30%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient n, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；
The solid-phase component o includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50% and glass Composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass group Close object D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass combination The weight percentage of object B is 30~60%, and the weight percentage of the glass composition C is 10~20%, the glass The weight percentage of composition D is 1~20%；
The solid-phase component p includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient p, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
15. a kind of Standard resistance range as claimed in claim 14 is the preparation side of the thick-film resistor paste of 100k Ω/~1M Ω/ Method, which is characterized in that the thick-film resistor paste that the Standard resistance range is 100k Ω/~1M Ω/ use resistance value for 100k Ω/ The thick-film resistor paste and resistance value of is that the thick-film resistor paste of 1M Ω/ mixes.
16. a kind of Standard resistance range is the thick-film resistor paste of 1M Ω/~10M Ω/, which is characterized in that the resistance slurry It is made by the thick-film resistor paste that resistance value is 1M Ω/ and the thick-film resistor paste that resistance value is 10M Ω/；
The thick-film resistor paste that the resistance value is the thick-film resistor paste of 1M Ω/ and resistance value is 10M Ω/ includes solid-phase component With organic phase constituent, the weight ratio of the solid-phase component and organic phase constituent is：Solid-phase component：Organic phase constituent=35~ 75:25~65；
The thick-film resistor paste that the resistance value is 1M Ω/ includes at least one of solid-phase component o and solid-phase component p；
The solid-phase component o includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50% and glass Composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass group Close object D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass combination The weight percentage of object B is 30~60%, and the weight percentage of the glass composition C is 10~20%, the glass The weight percentage of composition D is 1~20%；
The solid-phase component p includes the component of following weight percentage：RuO20~5%, Pb2Ru2O618~50%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 30~60%, and the weight percentage of the glass composition C is 10~20%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient p, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%；
The thick-film resistor paste that the resistance value is 10M Ω/ includes at least one of solid-phase component q and solid-phase component r；
The solid-phase component q includes the component of following weight percentage：RuO20~5%, Pb2Ru2O610~40% and glass Composition 50~80%；The glass composition includes glass composition A, glass composition B, glass composition C and glass group Close object D；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass combination The weight percentage of object B is 40~60%, and the weight percentage of the glass composition C is 10~20%, the glass The weight percentage of composition D is 1~20%；
The solid-phase component r includes the component of following weight percentage：RuO20~5%, Pb2Ru2O610~40%, glass Composition 50~80% and inorganic filler 0.1~32%；The glass composition include glass composition A, glass composition B and Glass composition C；In the glass composition, the weight percentage of the glass composition A is 10~40%, the glass The weight percentage of glass composition B is 40~60%, and the weight percentage of the glass composition C is 10~20%；Institute It states inorganic filler and includes CuO, MnO2、Nb2O5、SiO2、Ta2O5、TiO2、ZrO2And ZrSiO4At least one of；In the solid phase In ingredient r, the weight percentage of CuO is 0~3%, MnO2Weight percentage be 0~3%, Nb2O5Weight percent contain It measures as 0~3%, SiO2Weight percentage be 0~2%, Ta2O5Weight percentage be 0~5%, TiO2Weight hundred It is 0~1%, ZrO to divide content2Weight percentage be 0~2%, ZrSiO4Weight percentage be 0~13%.
17. a kind of Standard resistance range as claimed in claim 16 is the preparation side of the thick-film resistor paste of 1M Ω/~10M Ω/ Method, which is characterized in that the thick-film resistor paste that the Standard resistance range is 1M Ω/~10M Ω/ uses resistance value as 1M Ω/ Thick-film resistor paste and resistance value be 10M Ω/ thick-film resistor paste mix.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739675A (en) * 2020-06-19 2020-10-02 潮州三环（集团）股份有限公司 Thick film resistor paste
CN112086254A (en) * 2020-08-12 2020-12-15 西安宏星电子浆料科技股份有限公司 Environment-friendly thick-film resistor paste
WO2021244060A1 (en) * 2020-06-01 2021-12-09 潮州三环（集团）股份有限公司 Thick film resistance slurry
CN114883027A (en) * 2022-05-05 2022-08-09 潮州三环（集团）股份有限公司 Thick film resistor paste

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111916248B (en) * 2020-08-10 2021-12-21 西安宏星电子浆料科技股份有限公司 Thick-film resistor paste with electrostatic discharge resistance and low encapsulation change rate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1075816A (en) * 1991-12-25 1993-09-01 E·I·内穆尔杜邦公司 thick film resistor composition
CN1111798A (en) * 1993-06-07 1995-11-15 纳幕尔材邦公司 Thick film resistor composition
CN1130795A (en) * 1994-12-20 1996-09-11 纳幕尔杜邦公司 Cadmium-free and lead-free thick film paste composition
US6703683B2 (en) * 2000-04-20 2004-03-09 Rohm Co., Ltd. Chip resistor and method for manufacturing the same
CN101727997A (en) * 2008-10-23 2010-06-09 银锐明 YBCO thick film resistor slurry
CN102007080A (en) * 2008-04-18 2011-04-06 E.I.内穆尔杜邦公司 Resistor compositions using a cu-containing glass frit
CN106104711A (en) * 2014-09-12 2016-11-09 昭荣化学工业株式会社 Thick-film resistor body and manufacture method thereof
CN106104712A (en) * 2014-09-12 2016-11-09 昭荣化学工业株式会社 Resistance composition
CN107731340A (en) * 2017-08-31 2018-02-23 潮州三环（集团）股份有限公司 A kind of thick-film resistor paste conductive paste material

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974304A (en) * 1975-03-03 1976-08-10 General Electric Company Method of making a voltage responsive switch
JPS55140201A (en) * 1979-04-19 1980-11-01 Hitachi Ltd Composition for thick film thermistor
US4539223A (en) * 1984-12-19 1985-09-03 E. I. Du Pont De Nemours And Company Thick film resistor compositions
CN86108011B (en) * 1986-11-15 1988-10-26 国营宏明无线电器材厂 Linear thick-film negative temp. coefficient thermistor
US4961999A (en) * 1988-07-21 1990-10-09 E. I. Du Pont De Nemours And Company Thermistor composition
JP2777206B2 (en) * 1989-07-20 1998-07-16 住友金属鉱山株式会社 Manufacturing method of thick film resistor
JP3253121B2 (en) * 1992-03-30 2002-02-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Thick film resistor composition
JPH09162016A (en) * 1995-12-12 1997-06-20 Matsushita Electric Ind Co Ltd Zinc oxide varistor, manufacture thereof and crystalline glass composition for coating use which is used for that
JPH11195505A (en) * 1997-12-26 1999-07-21 E I Du Pont De Nemours & Co Thick-film resistor and manufacture thereof
KR100369565B1 (en) * 1999-12-17 2003-01-29 대주정밀화학 주식회사 Resistive paste composition for the formation of electrically heat-generating layer
US6860000B2 (en) * 2002-02-15 2005-03-01 E.I. Du Pont De Nemours And Company Method to embed thick film components
US20040113127A1 (en) * 2002-12-17 2004-06-17 Min Gary Yonggang Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto
CN1744238A (en) * 2004-09-01 2006-03-08 Tdk株式会社 Glass composition for thick film resistor paste, thick film resistor paste, thick-film resistor, and electronic device
TW200639880A (en) * 2005-02-21 2006-11-16 Tdk Corp Thick-film resistor and its production process
US8628695B2 (en) * 2008-04-18 2014-01-14 E I Du Pont De Nemours And Company Surface-modified ruthenium oxide conductive material, lead-free glass(es), thick film resistor paste(s), and devices made therefrom
CN101800101A (en) * 2009-04-30 2010-08-11 中国振华集团云科电子有限公司 Manufacturing method of positive temperature coefficient chip resistor
CN103429537B (en) * 2011-06-21 2015-04-22 住友金属矿山株式会社 Ruthenium oxide powder, composition for thick film resistor elements using same, and thick film resistor element
CN104464991B (en) * 2013-09-12 2017-06-06 中国振华集团云科电子有限公司 A kind of preparation method of linear semistor slurry
CN103971866B (en) * 2014-05-20 2017-04-12 立昌先进科技股份有限公司 Rheostat with filtration structure
CN105321642B (en) * 2014-07-31 2017-12-08 中国振华集团云科电子有限公司 A kind of preparation method of high TCR low square resistances LINEAR N TC resistance slurries
JP6642786B2 (en) * 2015-04-07 2020-02-12 日本電気硝子株式会社 Composite powder material
CN104916345B (en) * 2015-05-25 2017-06-13 电子科技大学 A kind of thick-film resistor paste and preparation method thereof
CN105741903B (en) * 2016-05-06 2017-04-05 西安电子科技大学 A kind of preparation method of the modified ruthenic oxide thick-film resistor paste of Ag doping
CN105976894A (en) * 2016-07-27 2016-09-28 东莞珂洛赫慕电子材料科技有限公司 Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof
CN106328251A (en) * 2016-08-18 2017-01-11 陆川县华鑫电子厂 Thick film resistor paste and preparation method thereof
CN106710758B (en) * 2017-01-17 2019-01-22 中国振华集团云科电子有限公司 A kind of preparation method of the linear negative temperature coefficient thermistor of thick film sheet type

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1075816A (en) * 1991-12-25 1993-09-01 E·I·内穆尔杜邦公司 thick film resistor composition
CN1111798A (en) * 1993-06-07 1995-11-15 纳幕尔材邦公司 Thick film resistor composition
CN1130795A (en) * 1994-12-20 1996-09-11 纳幕尔杜邦公司 Cadmium-free and lead-free thick film paste composition
US6703683B2 (en) * 2000-04-20 2004-03-09 Rohm Co., Ltd. Chip resistor and method for manufacturing the same
CN102007080A (en) * 2008-04-18 2011-04-06 E.I.内穆尔杜邦公司 Resistor compositions using a cu-containing glass frit
CN101727997A (en) * 2008-10-23 2010-06-09 银锐明 YBCO thick film resistor slurry
CN106104711A (en) * 2014-09-12 2016-11-09 昭荣化学工业株式会社 Thick-film resistor body and manufacture method thereof
CN106104712A (en) * 2014-09-12 2016-11-09 昭荣化学工业株式会社 Resistance composition
CN107731340A (en) * 2017-08-31 2018-02-23 潮州三环（集团）股份有限公司 A kind of thick-film resistor paste conductive paste material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021244060A1 (en) * 2020-06-01 2021-12-09 潮州三环（集团）股份有限公司 Thick film resistance slurry
TWI756053B (en) * 2020-06-01 2022-02-21 大陸商潮州三環（集團）股份有限公司 A thick film resistor paste and resistor
CN111739675A (en) * 2020-06-19 2020-10-02 潮州三环（集团）股份有限公司 Thick film resistor paste
CN112086254A (en) * 2020-08-12 2020-12-15 西安宏星电子浆料科技股份有限公司 Environment-friendly thick-film resistor paste
CN114883027A (en) * 2022-05-05 2022-08-09 潮州三环（集团）股份有限公司 Thick film resistor paste
CN114883027B (en) * 2022-05-05 2023-09-01 潮州三环（集团）股份有限公司 Thick film resistor paste

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