CN105976894A - Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof - Google Patents

Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof Download PDF

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CN105976894A
CN105976894A CN201610598193.4A CN201610598193A CN105976894A CN 105976894 A CN105976894 A CN 105976894A CN 201610598193 A CN201610598193 A CN 201610598193A CN 105976894 A CN105976894 A CN 105976894A
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高丽萍
苏冠贤
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Dongguan Corehelm Electronic Material Technology Co Ltd
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Dongguan Corehelm Electronic Material Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C12/00—Powdered glass; Bead compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003—Thick film resistors

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Abstract

The invention discloses middle temperature sintering thick-film resistance paste based on a high-temperature-resistant flexible substrate and a preparation method thereof. The thick-film resistance paste comprises an inorganic bonding phase, a composite function phase, a TCR regulator and an organic carrier. The inorganic bonding phase is formed by SiO2, Bi2O3, B2O3, P2O5, Al2O3, Li2O and CaF2; the composite function phase is formed by micron flake silver powders, micron spherical silver powders and nanometer silver powders; and the organic carrier is formed by organic solvents, macromolecule thickeners, high-temperature-resistant organic resin, surfactants, plasticizers, dispersants, antifoaming agents and thixotropic agents. The preparation method comprises the steps of preparation of the inorganic bonding phase, preparation of the composite function phase, preparation of the organic carrier and preparation of the resistance paste. The thick-film resistance paste is low in sintering temperature, short in sintering time, large in adhesive force, resistant to aging, high in flexibility, adjustable in square resistance, low and adjustable in resistance temperature coefficient and excellent in printing characteristic and sintering characteristic, and can be matched with the high-temperature-resistant flexible substrate.

Description

Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material and preparation method
Technical field
The present invention relates to technical field of electronic materials, particularly relate to a kind of intermediate sintering temperature based on high-temperature flexible base material thick Membrane resistance slurry and preparation method.
Background technology
In electric heating field, heating element wants that cube is little, power is big, thermal inertia is little, surface thermal load is big, power consumption Low, the thermal efficiency is high, thermal starting is fast, power stability, stationary field uniformly, good manufacturability, body temp auto-controlled, safe and reliable to operation, the longevity Life is long, applied widely, it is therefore desirable to use thick-film heating element.Thick-film resistor paste is the basic material manufacturing thick film element Material, thick film heating resistance is typically, with the noble metal powder such as Au Ag Pt Pd, ruthenic oxide or its oxide as matrix, to add As the glass phase of inorganic binder, and it is mixed to form heating resistor slurry with organic carrier, is then screen-printed to various base On sheet, sinter in air atmosphere, 400 DEG C of-900 DEG C of temperature ranges and be prepared from.
Flexible electrothermal membrane is a kind of plyability conducting film, its advantage be can according to the power set and heating require into Row is sheared, and the heater element made has the features such as light, thin, soft, simultaneously in planar heating, occupy quick heating, and thermal field is uniform Characteristic.Flexible electrothermal membrane, because of its good pliability, electric conductivity and safety, becomes other heating element heater in some application Do not caned substituted product, before household electrical appliance, power electronics, communication, the energy, aerospace field have a wide range of applications Scape.
Most thick-film resistor pastes based on flexible parent metal in prior art, the electric heating that can only realize under low-voltage turns Change, simultaneously because without self limiting temperature function, tensile strength is the highest, only can be used in the occasion that temperature is the highest.
Summary of the invention
Present invention aims to the deficiencies in the prior art and a kind of middle temperature based on high-temperature flexible base material is provided Sintered thick film resistance slurry, should intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material have sintering temperature low, burn The knot time is short, adhesive force is strong, height ageing-resistant, flexible, sheet resistance is adjustable, temperature-coefficient of electrical resistance is relatively low and adjustable, printing characteristic and burning The advantage becoming characteristic good, and can match with high-temperature flexible base material well.
Another object of the present invention is to provide a kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material Preparation method, this preparation method can produce effectively prepares above-mentioned thick-film resistor paste.
For reaching above-mentioned purpose, the present invention is achieved through the following technical solutions.
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 10%-30%
Complex function phase 49%-60%
TCR regulator 1%-5%
Organic carrier 20%-25%；
Wherein, inorganic bond is by SiO mutually2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2It is unleaded that seven kinds of materials are formed Low-temperature sintering glass dust, SiO in lead-free low-temperature sintered glass powder2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Seven kinds of materials Weight portion is followed successively by 20%-40%, 15%-20%, 25%-30%, 7.5%-10%, 7.5%-10%, 2.5%-5%, 2.5%-5%；
The combined silver that complex function is made up of micron flakes argentum powder, the spherical argentum powder of micron and three kinds of materials of nanometer silver powder mutually Powder, micron flakes argentum powder in mixing argentum powder, the spherical argentum powder of micron, the weight portion of three kinds of materials of nanometer silver powder be followed successively by 30%-45%, 35%-40%、20%-30%；
TCR regulator is in manganese dioxide, Red copper oxide, cobalt sesquioxide, nickel oxide, vanadic anhydride, iron sesquioxide The mixture that a kind of or at least two is formed；
Organic carrier be organic solvent, macromolecule thickener, high temperature resistant organic resin, surfactant, plasticizer, dispersant, The mixture that defoamer, eight kinds of materials of thixotropic agent are formed, organic solvent in organic carrier, macromolecule thickener, high temperature resistant has Machine resin, surfactant, plasticizer, dispersant, defoamer, the weight portion of eight kinds of materials of thixotropic agent be followed successively by 30%-65%, 15%-20%、15%-25%、1%-5%、1%-5%、1%-5%、1%-5%、1%-5%。
Wherein, the particle size values of described lead-free low-temperature sintered glass powder is 1 μm-3 μm, and softening point is 300 DEG C-400 DEG C, averagely Linear expansion coefficient is 3-9 × 10-6/℃。
Wherein, the particle size values of described complex function middle micron flakes argentum powder mutually is 1 m-3 m, and apparent density is 2.0-3.0 g/cm3, tap density is 3.0-4.0 g/cm3；The particle size values of the spherical argentum powder of micron is 1 m-3 m, and apparent density is 2.5-3.0 g/cm3, tap density is 3.0-4.0 g/cm3；The particle size values of nanometer silver powder is 10nm-50nm, and apparent density is 2.0-2.5 g/ cm3, tap density is 3.5-4.0 g/cm3。
Wherein, described organic solvent be Oleum Terebinthinae, terpineol, hexadecanol, butyl carbitol, butyl carbitol acetate, Diethylene glycol monomethyl ether, dibutyl ethylene glycol ether, ethylene glycol ether acetate, tributyl citrate, tributyl phosphate, Isosorbide-5-Nitrae-fourth In lactone, mixed dibasic acid ester, N-Methyl pyrrolidone, DMF, N,N-dimethylacetamide, dimethyl sulfoxide The mixture that formed of a kind of or at least two.
Wherein, described macromolecule thickener is ethyl cellulose, hydroxyethyl cellulose, carboxymethyl cellulose, nitrocellulose In element, polyvinyl alcohol, polyvinyl butyral resin, polyvinyl formal-acetal, polyvinyl acetate, polyvinylpyrrolidone one The mixture that kind or at least two are formed.
Wherein, described high temperature resistant organic resin is polyester modified organic silicon resin, polyimide resin, fluorinated polyimide One or at least two in resin, polybenzimidazole resin, polyphenylene quinoxaline, heteroaromatic poly methylene imine resin are formed Mixture.
Wherein, described surfactant is lecithin, one in Span-85, tween 80 or at least two formed Mixture；Described dispersant be the one in triammonium citrate, polymethyl acid amide, 1,4-dihydroxy sulfanilic acid or The mixture that at least two is formed；Described plasticizer is dimethyl phthalate, diethyl phthalate, O-phthalic The mixture that a kind of or at least two in dibutyl phthalate, dioctyl phthalate is formed.
Wherein, described defoamer is organosiloxane, polyethers, Polyethylene Glycol, ethylene-acrylic acid copolymer, polyglycerol ester The mixture that a kind of or at least two in fat acid esters, polydimethylsiloxane, organic silicon modified by polyether is formed.
Wherein, described thixotropic agent is hexadecanol, polyamide wax, castor oil hydrogenated, thixotropy alkyd resin, organobentonite Or the mixture that a kind of or at least two in aerosil is formed.
The preparation method of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, includes following technique step Suddenly, particularly as follows:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2In three-dimensional material mixer, mixing is all Even, SiO in mixture2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2In the weight portion of seven kinds of materials be followed successively by 20%-40%, 15%-20%, 25%-30%, 7.5%-10%, 7.5%-10%, 2.5%-5%, 2.5%-5%, then at smelting furnace melting, melting after mix homogeneously Temperature is 1100 DEG C-1200 DEG C, and temperature retention time is within 3-6 hour, i.e. to obtain glass melts, then glass melts is carried out shrend also Obtain glass, finally with distilled water for medium to glass ball milling 4-6 hour, i.e. obtain the lead-free low-temperature that particle size values is 1 μm-3 μm Sintered glass powder；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Energy phase, complex function middle micron flakes argentum powder, the spherical argentum powder of micron, the weight portion of three kinds of materials of nanometer silver powder mutually are followed successively by 30%- 45%, 35%-40%, 20%-30%, the particle size values of micron flakes argentum powder is 1 m-3 m, and the particle size values of the spherical argentum powder of micron is 1 m-3 M, the particle size values of nanometer silver powder is 10 nm-50 nm；
C, prepare organic carrier: by organic solvent, macromolecule thickener, high temperature resistant organic resin, surfactant, plasticizer, Dispersant, defoamer, thixotropic agent dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting containing of macromolecule thickener Amount, so that the viscosity of organic carrier controls in the range of 200 mPa s-300 mPa s, wherein, organic molten in organic carrier Agent, macromolecule thickener, high temperature resistant organic resin, surfactant, plasticizer, dispersant, defoamer, eight kinds of materials of thixotropic agent Weight portion be followed successively by 30%-65%, 15%-20%, 15%-25%, 1%-5%, 1%-5%, 1%-5%, 1%-5%, 1%-5%；
Prepared by d, resistance slurry: inorganic adhesive phase, complex function phase, TCR regulator, organic carrier are stirred in container and divide Dissipating, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 80-150Pa s, fineness is less than the thick film of 5 μm Resistance slurry, wherein, inorganic adhesive phase, complex function phase, TCR regulator, the weight of four kinds of materials of organic carrier in resistance slurry Amount part is followed successively by 10%-30%, 49%-60%, 1%-5%, 20%-25%.
The invention have the benefit that intermediate sintering temperature thick-film resistor based on high-temperature flexible base material of the present invention is starched Expecting, it has the following advantages, particularly as follows:
1, SiO is used2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Prepare lead-free glass powder with low melting point, thick as intermediate sintering temperature The inorganic adhesive phase of membrane resistance slurry, can make resistive layer sinter between 420 DEG C-450 DEG C, it is to avoid lead research and development, use and The injury after Fei Qi caused environment, human body, can solve high-power resistance or heating manufacturing is badly in need of asking of solution Topic, meets RoHS Directive (2002/95/EC) requirement；
2, different-shape and the micron flakes argentum powder of different-grain diameter, the spherical argentum powder of micron, the mixed powder work of nanometer silver powder are used For complex function phase, it is used for preparing intermediate sintering temperature thick-film resistor paste, not only can effectively regulate the sheet resistance of resistive layer, simultaneously Make again the sheet resistance reheating rate of change of resistive layer less than 5%；
3, use macromolecule thickener, high temperature resistant organic resin and other additive compound to prepare organic carrier, improve resistance While adhesion of slurry, the viscosity of Effective Regulation slurry and printing, make resistive layer flawless and the pin pore etc. of preparation lack Fall into, make the resistive layer of preparation have adhesive force advantages of higher strong, ageing-resistant, flexible simultaneously；
4, printing characteristic and burn till characteristic good, sheet resistance is adjustable, and the reheating rate of change of sheet resistance is less than 5% simultaneously, temperature-coefficient of electrical resistance Less than 200 × 10-6/ DEG C, and can be well matched with flexible parent metal；
5, this thick-film resistor paste can prepare high power flexible electrothermal membrane, and its power density can control at 10-30W/cm2It Between, can be widely applied to high power field of electric heating, be greatly enhanced efficiency of energy utilization.
Another of the present invention has: intermediate sintering temperature thick film based on high-temperature flexible base material of the present invention electricity The preparation method of resistance paste, this preparation method can produce effectively prepares above-mentioned intermediate sintering temperature based on high-temperature flexible base material Thick-film resistor paste.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention will be described.
Embodiment 1
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 30%
Complex function phase 49%
Manganese dioxide 1%
Organic carrier 20%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 40%
Bi2O3 15%
B2O3 25%
P2O5 7.5%
Al2O3 7.5%
Li2O 2.5%
CaF22.5%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 45%
The spherical argentum powder 35% of micron
Nanometer silver powder 20%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
N-Methyl pyrrolidone 60%
Polyvinyl acetate 20%
Polyester modified organic silicon resin 10%
Span-85 2%
Dioctyl phthalate 2%
Polymethyl acid amide 2%
Organic silicon modified by polyether 2%
Castor oil hydrogenated 2%.
Need to be explained further, the high-temperature flexible base material that the present embodiment 1 is based on is PI thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method to prepare Forming, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material comprises the following steps that:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature is 1100 DEG C, and temperature retention time is i.e. to obtain glass melts, then by glass melts in 6 hours Carrying out shrend and obtain glass, finally with distilled water for medium to glass ball milling 6 hours, i.e. obtaining particle size values is 1 μm-3 μm Lead-free low-temperature sintered glass powder；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Can phase；
C, prepare organic carrier: by N-Methyl pyrrolidone, polyvinyl acetate, polyester modified organic silicon resin, Span-85, Dioctyl phthalate, polymethyl acid amide, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain in 80 DEG C of water-baths To organic carrier, the viscosity of organic carrier is 200 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator manganese dioxide, organic carrier in container Dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 110 ± 20Pa s, fineness is less than 5 μ The thick-film resistor paste of m.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 1, work as resistive layer When thickness is 12 ± 2 μm, its sheet resistance value is 600 ± 5 m Ω/, and sheet resistance reheating rate of change is 3.5%, and temperature-coefficient of electrical resistance is 100±10×10-6/℃。
Embodiment 2
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 20%
Complex function phase 50%
Red copper oxide 2.5%
Organic carrier 27.5%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 20%
Bi2O3 20%
B2O3 30%
P2O5 10%
Al2O3 10%
Li2O 5%
CaF25%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 35%
The spherical argentum powder 40% of micron
Nanometer silver powder 25%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
N,N-dimethylformamide 65%
Polyvinyl formal-acetal 15%
Polyimide resin 10%
Lecithin 2%
Dibutyl phthalate 2%
Polymethyl acid amide 2%
Organic silicon modified by polyether 2%
Polyamide wax 2%.
Need to be explained further, the high-temperature flexible base material that the present embodiment 2 is based on is PI thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method Being prepared from, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material includes following Processing step:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature be 1200 DEG C of temperature retention times be i.e. to obtain glass melts in 5 hours, then glass melts is entered Row shrend also obtains glass, finally with distilled water for medium to glass ball milling 5 hours, i.e. obtains the nothing that particle size values is 1 μm-3 μm Lead low-temperature sintering glass dust；
B, preparation complex function phase: micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously is compound with preparation Function phase；
C, prepare organic carrier: by N,N-dimethylformamide, polyvinyl formal-acetal polyimide resin, lecithin, neighbour Phthalic acid dibutyl ester, polymethyl acid amide, organic silicon modified by polyether, polyamide wax dissolve to be had in 80 DEG C of water-baths Airborne body, the viscosity of organic carrier is 220 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator Red copper oxide, organic carrier in container Dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 100 ± 20Pa s, fineness is less than 5 μ The thick-film resistor paste of m.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 2, work as resistive layer When thickness is 11 ± 2 μm, its sheet resistance value is 760 ± 5 m Ω/, and sheet resistance reheating rate of change is 3.1%, and temperature-coefficient of electrical resistance is 150±10×10-6/℃。
Embodiment 3
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 15%
Complex function phase 60%
Iron sesquioxide 3%
Organic carrier 22%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 30%
Bi2O3 20%
B2O3 25%
P2O5 7.5%
Al2O3 7.5%
Li2O 5%
CaF25%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 40%
The spherical argentum powder 40% of micron
Nanometer silver powder 20%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
N-Methyl pyrrolidone 60%
Polyvinyl alcohol 20%
Polybenzimidazole resin 10%
Span-85 2%
Dioctyl phthalate 2%
Polymethyl acid amide 2%
Organic silicon modified by polyether 2%
Castor oil hydrogenated 2%.
Need to be explained further, the high-temperature flexible base material that the present embodiment 3 is based on is PA thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method to prepare Forming, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material comprises the following steps that:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature is 1200 DEG C, and temperature retention time is i.e. to obtain glass melts, then by glass melts in 6 hours Carrying out shrend and obtain glass, finally with distilled water for medium to glass ball milling 6 hours, i.e. obtaining particle size values is 1 μm-3 μm Lead-free low-temperature sintered glass powder；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Can phase；
C, prepare organic carrier: by N-Methyl pyrrolidone, polyvinyl alcohol, polybenzimidazole resin, Span-85, O-phthalic Dioctyl phthalate, polymethyl acid amide, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain to have airborne in 80 DEG C of water-baths Body, the viscosity of organic carrier is 250 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator iron sesquioxide, organic carrier in container Middle dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 105 ± 20Pa s, fineness is less than The thick-film resistor paste of 5 μm.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 3, work as resistive layer When thickness is 12 ± 2 μm, its sheet resistance value is 840 ± 5 m Ω/, and sheet resistance reheating rate of change is 4.5%, and temperature-coefficient of electrical resistance is 170±10×10-6/℃。
Embodiment 4
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 20%
Complex function phase 50%
Vanadic anhydride 2.5%
Organic carrier 27.5%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 20%
Bi2O3 20%
B2O3 30%
P2O5 10%
Al2O3 10%
Li2O 5%
CaF25%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 30%
The spherical argentum powder 40% of micron
Nanometer silver powder 30%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
N,N-dimethylformamide 60%
Polyvinylpyrrolidone 20%
Polyphenylene quinoxaline 10%
Tween 80 2%
Dibutyl phthalate 2%
Polymethyl acid amide 2%
Organic silicon modified by polyether 2%
Thixotropy alkyd resin 2%；
Need to be explained further, the high-temperature flexible base material that the present embodiment 4 is based on is PI thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method to prepare Forming, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material comprises the following steps that:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature be 1100 DEG C of temperature retention times be i.e. to obtain glass melts in 3 hours, then glass melts is entered Row shrend also obtains glass, finally with distilled water for medium to glass ball milling 4 hours, i.e. obtains the nothing that particle size values is 1 μm-3 μm Lead low-temperature sintering glass dust；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously to prepare complex function phase；
C, prepare organic carrier: by N,N-dimethylformamide, polyvinylpyrrolidone, polyphenylene quinoxaline, tween 80, neighbour Phthalic acid dibutyl ester, polymethyl acid amide, organic silicon modified by polyether, thixotropy alkyd resin dissolve in 80 DEG C of water-baths with Obtaining organic carrier, the viscosity of organic carrier is 240 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator vanadic anhydride, organic carrier in container Middle dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 80 ± 20Pa s, fineness is less than 5 The thick-film resistor paste of μm.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 4, work as resistive layer When thickness is 13 ± 2 μm, its sheet resistance value is 950 ± 5 m Ω/, and sheet resistance reheating rate of change is 3.5%, and temperature-coefficient of electrical resistance is 130±10×10-6/℃。
Embodiment 5
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 10%
Complex function phase 60%
Nickel oxide 5%
Organic carrier 25%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 30%
Bi2O3 15%
B2O3 25%
P2O5 10%
Al2O3 10%
Li2O 5%
CaF25%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 45%
The spherical argentum powder 35% of micron
Nanometer silver powder 20%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
DMAC N,N' dimethyl acetamide 65%
Polyvinyl acetate 20%
Fluorinated polyimide resin 10%
Tween 80 1%
Dioctyl phthalate 1%
Triammonium citrate 1%
Polyglyceryl fatty acid ester 1%
Castor oil hydrogenated 1%；
Need to be explained further, the high-temperature flexible base material that the present embodiment 5 is based on is PI thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method Being prepared from, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material includes following Processing step:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature is 1100 DEG C, and temperature retention time is i.e. to obtain glass melts, then by glass melts in 6 hours Carrying out shrend and obtain glass, finally with distilled water for medium to glass ball milling 4 hours, i.e. obtaining particle size values is 1 μm-3 μm Lead-free low-temperature sintered glass powder；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Can phase；
C, prepare organic carrier: by DMAC N,N' dimethyl acetamide, polyvinyl acetate, fluorinated polyimide resin, tween 80, Dioctyl phthalate, triammonium citrate, organic silicon modified by polyether, castor oil hydrogenated dissolve to be had in 80 DEG C of water-baths Airborne body, the viscosity of organic carrier is 220 ± 20 mPa s；
D, prepare resistance slurry: inorganic adhesive phase, complex function phase, TCR regulator nickel oxide, organic carrier are stirred in container Mixing dispersion, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 110 ± 20Pa s, fineness is less than 5 μm Thick-film resistor paste.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 5, work as resistive layer When thickness is 11 ± 2 μm, its sheet resistance value is 720 ± 5 m Ω/, and sheet resistance reheating rate of change is 3.8%, and temperature-coefficient of electrical resistance is 140±10×10-6/℃。
Embodiment 6
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, particularly as follows:
Inorganic adhesive phase 20%
Complex function phase 50%
Cobalt sesquioxide 2.5%
Organic carrier 27.5%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 20%
Bi2O3 20%
B2O3 30%
P2O5 10%
Al2O3 10%
Li2O 5%
CaF25%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 30%
The spherical argentum powder 40% of micron
Nanometer silver powder 30%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
N,N-dimethylformamide 75%
Polyvinyl formal-acetal 20%
Polyester modified organic silicon resin 10%
Lecithin 2%
Dibutyl phthalate 2%
Polymethyl acid amide 2%
Organic silicon modified by polyether 2%
Polyamide wax 1%；
Need to be explained further, the high-temperature flexible base material that the present embodiment 6 is based on is PI thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method Being prepared from, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material includes following Processing step:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature be 1200 DEG C of temperature retention times be i.e. to obtain glass melts in 5 hours, then glass melts is entered Row shrend also obtains glass, finally with distilled water for medium to glass ball milling 4 hours, i.e. obtains the nothing that particle size values is 1 μm-3 μm Lead low-temperature sintering glass dust；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Can phase；
C, prepare organic carrier: by N,N-dimethylformamide, polyvinyl formal-acetal, polyester modified organic silicon resin, ovum Phospholipid, dibutyl phthalate, polymethyl acid amide, organic silicon modified by polyether, polyamide wax dissolve in 80 DEG C of water-baths To obtain organic carrier, the viscosity of organic carrier is 200 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator cobalt sesquioxide, organic carrier in container Middle dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 85 ± 20Pa s, fineness is less than 5 The thick-film resistor paste of μm.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 6, work as resistive layer When thickness is 11 ± 2 μm, its sheet resistance value is 800 ± 5 m Ω/, and sheet resistance reheating rate of change is 4.2%, and temperature-coefficient of electrical resistance is 145±10×10-6/℃。
Embodiment 7
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, specifically For:
Inorganic adhesive phase 25%
Complex function phase 50%
Manganese dioxide 2%
Organic carrier 23%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 40%
Bi2O3 15%
B2O3 25%
P2O5 7.5%
Al2O3 7.5%
Li2O 2.5%
CaF22.5%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 45%
The spherical argentum powder 35% of micron
Nanometer silver powder 20%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
DMAC N,N' dimethyl acetamide 60%
Polyvinyl acetate 20%
Polybenzimidazole resin 10%
Span-85 2%
Dioctyl phthalate 2%
Polymethyl acid amide 2%
Organic silicon modified by polyether 2%
Castor oil hydrogenated 2%；
Need to be explained further, the high-temperature flexible base material that the present embodiment 7 is based on is PA thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method Being prepared from, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material includes following Processing step:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature is 1150 DEG C, and temperature retention time is i.e. to obtain glass melts, then by glass melts in 6 hours Carrying out shrend and obtain glass, finally with distilled water for medium to glass ball milling 4-6 hour, i.e. obtaining particle size values is 1 μm-3 μm Lead-free low-temperature sintered glass powder；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Can phase；
C, prepare organic carrier: by DMAC N,N' dimethyl acetamide, polyvinyl acetate, polybenzimidazole resin, Span-85, adjacent Dioctyl phthalate, polymethyl acid amide, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain in 80 DEG C of water-baths Organic carrier, the viscosity of organic carrier is 200 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator manganese dioxide, organic carrier in container Dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 100 ± 20Pa s, fineness is less than 5 μ The thick-film resistor paste of m.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 7, work as resistive layer When thickness is 10 ± 2 μm, its sheet resistance value is 750 ± 5 m Ω/, and sheet resistance reheating rate of change is 3.0%, and temperature-coefficient of electrical resistance is 130±10×10-6/℃。
Embodiment 8
A kind of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it includes the material of following weight portion, specifically For:
Inorganic adhesive phase 20%
Complex function phase 50%
Cobalt sesquioxide 2.5%
Organic carrier 27.5%；
Wherein, inorganic adhesive includes the material of following weight portion mutually, particularly as follows:
SiO2 20%
Bi2O3 20%
B2O3 30%
P2O5 10%
Al2O3 10%
Li2O 5%
CaF25%；
Wherein, complex function includes the material of following weight portion mutually, particularly as follows:
Micron flakes argentum powder 38%
The spherical argentum powder 38% of micron
Nanometer silver powder 24%；
Wherein, organic carrier includes the material of following weight portion, particularly as follows:
N,N-dimethylformamide 65%
Polyvinyl formal-acetal 20%
Heteroaromatic poly methylene imine resin 10%
Lecithin 1%
Dibutyl phthalate 1%
Polymethyl acid amide 1%
Organic silicon modified by polyether 1%
Organobentonite 1%；
Need to be explained further, the high-temperature flexible base material that the present embodiment 8 is based on is PI thin film.
For above-mentioned intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it can use following preparation method Being prepared from, concrete, the preparation method being somebody's turn to do intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material includes following Processing step:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Mix homogeneously in three-dimensional material mixer After then at smelting furnace melting, smelting temperature be 1200 DEG C of temperature retention times be i.e. to obtain glass melts in 6 hours, then glass melts is entered Row shrend also obtains glass, finally with distilled water for medium to glass ball milling 4 hours, i.e. obtains the nothing that particle size values is 1 μm-3 μm Lead low-temperature sintering glass dust；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Can phase；
C, prepare organic carrier: by N,N-dimethylformamide, polyvinyl formal-acetal, heteroaromatic poly methylene imine resin, ovum Phospholipid, dibutyl phthalate, polymethyl acid amide, organic silicon modified by polyether, organobentonite are molten in 80 DEG C of water-baths Solution is to obtain organic carrier, and the viscosity of organic carrier is 260 ± 20 mPa s；
D, prepare resistance slurry: by inorganic adhesive phase, complex function phase, TCR regulator cobalt sesquioxide, organic carrier in container Middle dispersed with stirring, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 90 ± 20Pa s, fineness is less than 5 The thick-film resistor paste of μm.
For the intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material of the present embodiment 8, work as resistive layer When thickness is 12 ± 2 μm, its sheet resistance value is 845 ± 5 m Ω/, and sheet resistance reheating rate of change is 4.7%, and temperature-coefficient of electrical resistance is 160±10×10-6/℃。
Above content is only presently preferred embodiments of the present invention, for those of ordinary skill in the art, according to the present invention's Thought, the most all will change, and this specification content should not be construed as the present invention Restriction.

Claims (10)

1. intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it is characterised in that include following weight portion Material, particularly as follows:
Inorganic adhesive phase 10%-30%
Complex function phase 49%-60%
TCR regulator 1%-5%
Organic carrier 20%-25%；
Wherein, inorganic bond is by SiO mutually2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2It is unleaded that seven kinds of materials are formed Low-temperature sintering glass dust, SiO in lead-free low-temperature sintered glass powder2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2Seven kinds of materials Weight portion is followed successively by 20%-40%, 15%-20%, 25%-30%, 7.5%-10%, 7.5%-10%, 2.5%-5%, 2.5%-5%；
The combined silver that complex function is made up of micron flakes argentum powder, the spherical argentum powder of micron and three kinds of materials of nanometer silver powder mutually Powder, micron flakes argentum powder in mixing argentum powder, the spherical argentum powder of micron, the weight portion of three kinds of materials of nanometer silver powder be followed successively by 30%-45%, 35%-40%、20%-30%；
TCR regulator is in manganese dioxide, Red copper oxide, cobalt sesquioxide, nickel oxide, vanadic anhydride, iron sesquioxide The mixture that a kind of or at least two is formed；
Organic carrier be organic solvent, macromolecule thickener, high temperature resistant organic resin, surfactant, plasticizer, dispersant, The mixture that defoamer, eight kinds of materials of thixotropic agent are formed, organic solvent in organic carrier, macromolecule thickener, high temperature resistant has Machine resin, surfactant, plasticizer, dispersant, defoamer, the weight portion of eight kinds of materials of thixotropic agent be followed successively by 30%-65%, 15%-20%、15%-25%、1%-5%、1%-5%、1%-5%、1%-5%、1%-5%。
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: The particle size values of described lead-free low-temperature sintered glass powder is 1 μm-3 μm, and softening point is 300 DEG C-400 DEG C, and average coefficient of linear expansion is 3-9×10-6/℃。
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: The particle size values of described complex function middle micron flakes argentum powder mutually is 1 m-3 m, and apparent density is 2.0-3.0 g/cm3, vibration density Degree is 3.0-4.0 g/cm3；The particle size values of the spherical argentum powder of micron is 1 m-3 m, and apparent density is 2.5-3.0 g/cm3, vibration density Degree is 3.0-4.0 g/cm3；The particle size values of nanometer silver powder is 10nm-50nm, and apparent density is 2.0-2.5 g/cm3, tap density For 3.5-4.0 g/cm3。
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: Described organic solvent is Oleum Terebinthinae, terpineol, hexadecanol, butyl carbitol, butyl carbitol acetate, diethylene glycol list first Ether, dibutyl ethylene glycol ether, ethylene glycol ether acetate, tributyl citrate, tributyl phosphate, GBL, mixing two Unit acid esters, N-Methyl pyrrolidone, DMF, N,N-dimethylacetamide, dimethyl sulfoxide in one or The mixture that at least two is formed.
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: Described macromolecule thickener is ethyl cellulose, hydroxyethyl cellulose, carboxymethyl cellulose, NC Nitroncellulose, polyvinyl alcohol, gathers One in vinyl butyral, polyvinyl formal-acetal, polyvinyl acetate, polyvinylpyrrolidone or at least two The mixture formed.
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: Described high temperature resistant organic resin is polyester modified organic silicon resin, polyimide resin, fluorinated polyimide resin, polyphenyl miaow The mixture that a kind of or at least two in azoles resin, polyphenylene quinoxaline, heteroaromatic poly methylene imine resin is formed.
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: The mixture that described surfactant is lecithin, a kind of or at least two in Span-85, tween 80 is formed；Described Dispersant is triammonium citrate, one in polymethyl acid amide, 1,4-dihydroxy sulfanilic acid or at least two are formed Mixture；Described plasticizer is dimethyl phthalate, diethyl phthalate, dibutyl phthalate, adjacent benzene The mixture that a kind of or at least two in dioctyl phthalate dioctyl ester is formed.
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: Described defoamer is organosiloxane, polyethers, Polyethylene Glycol, ethylene-acrylic acid copolymer, polyglyceryl fatty acid ester, poly-diformazan The mixture that a kind of or at least two in radical siloxane, organic silicon modified by polyether is formed.
Intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material the most according to claim 1, it is characterised in that: Described thixotropic agent is hexadecanol, polyamide wax, castor oil hydrogenated, thixotropy alkyd resin, organobentonite or gas phase titanium dioxide The mixture that a kind of or at least two in silicon is formed.
10. the preparation method of intermediate sintering temperature thick-film resistor paste based on high-temperature flexible base material, it is characterised in that include with Lower processing step, particularly as follows:
A, prepare inorganic adhesive phase: by SiO2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2In three-dimensional material mixer, mixing is all Even, SiO in mixture2、Bi2O3、B2O3、P2O5、Al2O3、Li2O、CaF2In the weight portion of seven kinds of materials be followed successively by 20%-40%, 15%-20%, 25%-30%, 7.5%-10%, 7.5%-10%, 2.5%-5%, 2.5%-5%, then at smelting furnace melting, melting after mix homogeneously Temperature is 1100 DEG C-1200 DEG C, and temperature retention time is within 3-6 hour, i.e. to obtain glass melts, then glass melts is carried out shrend also Obtain glass, finally with distilled water for medium to glass ball milling 4-6 hour, i.e. obtain the lead-free low-temperature that particle size values is 1 μm-3 μm Sintered glass powder；
B, preparation complex function phase: by micron flakes argentum powder, the spherical argentum powder of micron, nanometer silver powder mix homogeneously with the compound merit of preparation Energy phase, complex function middle micron flakes argentum powder, the spherical argentum powder of micron, the weight portion of three kinds of materials of nanometer silver powder mutually are followed successively by 30%- 45%, 35%-40%, 20%-30%, the particle size values of micron flakes argentum powder is 1 m-3 m, and the particle size values of the spherical argentum powder of micron is 1 m-3 M, the particle size values of nanometer silver powder is 10 nm-50 nm；
C, prepare organic carrier: by organic solvent, macromolecule thickener, high temperature resistant organic resin, surfactant, plasticizer, Dispersant, defoamer, thixotropic agent dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting containing of macromolecule thickener Amount, so that the viscosity of organic carrier controls in the range of 200 mPa s-300 mPa s, wherein, organic molten in organic carrier Agent, macromolecule thickener, high temperature resistant organic resin, surfactant, plasticizer, dispersant, defoamer, eight kinds of materials of thixotropic agent Weight portion be followed successively by 30%-65%, 15%-20%, 15%-25%, 1%-5%, 1%-5%, 1%-5%, 1%-5%, 1%-5%；
Prepared by d, resistance slurry: inorganic adhesive phase, complex function phase, TCR regulator, organic carrier are stirred in container and divide Dissipating, and be placed in three-roll grinder and repeatedly grind, to obtain range of viscosities be 80-150Pa s, fineness is less than the thick film of 5 μm Resistance slurry, wherein, inorganic adhesive phase, complex function phase, TCR regulator, the weight of four kinds of materials of organic carrier in resistance slurry Amount part is followed successively by 10%-30%, 49%-60%, 1%-5%, 20%-25%.
CN201610598193.4A 2016-07-27 2016-07-27 Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof Pending CN105976894A (en)

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CN110580993B (en) * 2017-10-23 2021-05-04 潮州三环（集团）股份有限公司 Thick film resistor paste with resistance range of 10 omega/□ -100 omega/□ and preparation method thereof
CN109994246A (en) * 2017-12-15 2019-07-09 住友金属矿山株式会社 Thick film conductor formation powder composition and thick film conductor formation slurry
CN109994246B (en) * 2017-12-15 2022-05-10 住友金属矿山株式会社 Powder composition for forming thick-film conductor and slurry for forming thick-film conductor
CN110592981A (en) * 2019-09-27 2019-12-20 山东华菱电子股份有限公司 Organic solvent carrier for blending thick film paste
CN112489910A (en) * 2020-12-15 2021-03-12 贵州振华电子信息产业技术研究有限公司 Integrally-formed high-voltage pulse resistance resistor and preparation method thereof
CN113257456A (en) * 2021-05-12 2021-08-13 浙江奕成科技有限公司 Low-cost conductive paste for heterojunction solar cell and preparation method thereof
CN113257455A (en) * 2021-07-16 2021-08-13 西安宏星电子浆料科技股份有限公司 Low-temperature-sintered lead-free conductive silver paste
CN114203337A (en) * 2021-12-13 2022-03-18 江苏聚盈新材料科技有限公司 High-recovery solar cell front silver paste and preparation method thereof
CN114203337B (en) * 2021-12-13 2024-10-25 江苏聚盈新材料科技有限公司 High-resilience solar cell front silver paste and preparation method thereof
CN114822907A (en) * 2022-06-24 2022-07-29 西安宏星电子浆料科技股份有限公司 Sintering-resistant resistor slurry
CN114822907B (en) * 2022-06-24 2022-09-30 西安宏星电子浆料科技股份有限公司 Sintering-resistant resistor slurry

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