CN106409380A - Medium temperature sintering resistance slurry of aluminum alloy substrate thick film circuit and preparation method thereof - Google Patents

Abstract

The invention discloses medium temperature sintering resistance slurry of an aluminum alloy substrate thick film circuit and a preparation method thereof. The resistance slurry comprises an inorganic bonding phase, a composite function phase and an organic carrier, wherein the inorganic bonding phase is composed of Bi2O3-B2O3-K2O-SrO2-V2O5-TiO2-ZnO microcrystal glass dust and rare earth oxides; the composite function phase is composed of ruthenium dioxide and nanometer silver powder; the organic carrier is composed of an organic solvent, a macromolecule thickening agent, a surfactant, a plasticizer, a dispersing agent, an antifoaming agent and a thixotropic agent. The resistance slurry has the advantages of being low in sintering temperature, strong in adhesive force, resistant to ageing, adjustable in square resistance, low and adjustable in temperature coefficient of resistance, excellent in printing characteristic and sintering characteristic, and capable of being matched with an aluminum-based insulating layer; the resistance slurry can be used for preparing aluminum alloy substrate thick film circuit electrical heating elements with light weight, good thermal conductivity and high power, and utilization efficiency of energy is greatly improved.

Description

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry and preparation method thereof

Technical field

The present invention relates to thick film circuit technique field, more particularly, to a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance Slurry and preparation method thereof.

Background technology

With thick film circuit element to the development of multiple stratification and miniaturization, corresponding mechanics and thermal property are proposed to substrate Require, particularly the heat conductivity of substrate requires.It is cold that the density that aluminium alloy base plate has is little, ductility is good, heat conductivity is good, excellent The performance such as thermo forming performance and good toughness makes it possible to use as baseplate material, but thus brings again The problems such as mismatch of thermal coefficient of expansion and conventional electric slurry.Earlier 1900s, thick film circuit prepared by anodization aluminium sheet For solaode, LED substrate, for DC low-voltage, succeed, yet with power is little, hot property, insulating properties Can be poor, dangerous the problems such as, is it is impossible to be used for heating.

Due to the thermal coefficient of expansion height of aluminium alloy base plate, fusing point is low simultaneously（Less than 660 DEG C）, therefore can not select high temperature scale Quasi-firing technique（850℃）, it requires that corresponding resistance slurry can only sinter under the fusion temperature less than aluminum, and have good Adhesive force, matching, screen printing property and multiple refiring capability is so that the development of aluminium base resistance slurry becomes extremely difficult.

Content of the invention

Present invention aims to the deficiencies in the prior art and provide a kind of middle temperature of aluminium alloy base plate thick film circuit burn Junction resistance slurry, this aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry has that sintering temperature is low, adhesive force is strong, resistance to old Change, flexible high, sheet resistance is adjustable, temperature-coefficient of electrical resistance is relatively low and adjustable, printing characteristic and burn till characteristic good and can be with aluminium base The advantage that insulating barrier matches, that is, this aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry can be effectively adapted to prepare matter Amount is light, heat conductivity good, high-power aluminium alloy base plate thick film circuit heating, to be widely used in household electrical appliance, industry, agriculture Industry, novel energy or even war industry field, are greatly enhanced efficiency of energy utilization.

Another object of the present invention is to providing a kind of preparation of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry Method, this preparation method can produce effectively prepares above-mentioned aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry.

For reaching above-mentioned purpose, the present invention is achieved through the following technical solutions.

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry is it is characterised in that include following weight portion Material, specially：

Inorganic adhesive phase 10% ~ 30%,

Complex function phase 50% ~ 60%,

Organic carrier 20% ~ 30%；

Wherein, inorganic bond phase is by Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder and rare-earth oxidation Thing forms, Bi in inorganic adhesive phase₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO, the weight portion of eight kinds of materials of rare earth oxide Be followed successively by 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 5% ~ 10%, 5-10%.

Complex function phase is the mixed powder of ruthenic oxide powder and nanometer silver powder, and ruthenic oxide powder and two kinds of things of nanometer silver powder The weight portion of material is followed successively by 40% ~ 60%, 60% ~ 40%.

Organic carrier is organic solvent, macromolecule thickener, surfactant, plasticizer, dispersant, defoamer, thixotroping The mixture that seven kinds of materials of agent are formed, organic solvent in organic carrier, macromolecule thickener, surfactant, plasticizer, point Powder, defoamer, the weight portion of seven kinds of materials of thixotropic agent be followed successively by 40% ~ 70%, 25% ~ 35%, 1% ~ 5%, 1% ~ 5%, 1% ~ 5%, 1% ~ 5%、1%~5%.

Wherein, the particle size values of described microcrystalline glass powder are 1 ~ 3 μm, and softening point is 300～400 DEG C, average coefficient of linear expansion For 18～25 × 10^-6/℃.

Wherein, described rare earth oxide is La₂O₃、Sc₂O₃、Y₂O₃、CeO₂、Sm₂O₃、Gd₂O₃、Nd₂O₃、Pr₂O₃、Eu₂O₃In One kind, the particle size values of rare earth oxide are 1 ~ 3 μm.

Wherein, in described complex function phase, the particle size values of ruthenic oxide powder are 1 ~ 3 m, and apparent density is 1.0 ~ 2.0 g/ cm³, tap density is 1.0 ~ 2.0 g/cm³, the particle size values of nanometer silver powder are 10 ~ 50nm, and apparent density is 2.0 ~ 2.5 g/cm³, Tap density is 3.5 ~ 4.0 g/cm³.

Wherein, described organic solvent be Oleum Terebinthinae, terpineol, hexadecanol, butyl carbitol, butyl carbitol acetate, Diethylene glycol monomethyl ether, dibutyl ethylene glycol ether, ethylene glycol ether acetate, tributyl citrate, tributyl phosphate, Isosorbide-5-Nitrae-fourth In lactone, mixed dibasic acid ester, N-Methyl pyrrolidone, DMF, N,N-dimethylacetamide, dimethyl sulfoxide A kind of or at least two mixture being formed.

Wherein, described macromolecule thickener is ethyl cellulose, hydroxyethyl cellulose, carboxymethyl cellulose, nitrocellulose Element, Macrogol 2000, polyvinyl alcohol, polyvinyl butyral resin, polyvinyl formal-acetal, polyvinyl acetate, polyethylene The mixture that one of ketopyrrolidine or at least two is formed.

Wherein, described surfactant is lecithin, one of Span -85, tween 80 or at least two formed Mixture；Described dispersant be one of triammonium citrate, polymethyl acid amide, 1,4- dihydroxy sulfanilic acid or At least two mixture being formed.

Wherein, described defoamer is organosiloxane, polyethers, Polyethylene Glycol, ethylene-acrylic acid copolymer, polyglycerol ester The mixture that one of fat acid esters, polydimethylsiloxane, organic silicon modified by polyether or at least two are formed.

Wherein, described plasticizer be dimethyl phthalate, diethyl phthalate, dibutyl phthalate, The mixture that one of dioctyl phthalate or at least two is formed；Described thixotropic agent is hexadecanol, polyamide One of wax, castor oil hydrogenated, thixotropy alkyd resin, organobentonite or aerosil or at least two groups The mixture becoming.

A kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, includes following processing step, It is specially：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and rare earth oxide be in three-dimensional blender Mix homogeneously in machine, Bi in mixture₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, the weight of ZnO and eight kinds of materials of rare earth oxide Amount part is followed successively by 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 5% ~ 10%, 5-10%, mixing is all Then at smelting furnace melting after even, smelting temperature is 1000 ~ 1300 DEG C, and temperature retention time obtained glass melts for 3 ~ 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 4 ~ 6 hours, that is, obtaining particle size values is 1 ~ 3 μm of microcrystalline glass powder；

B, preparation complex function phase：Ruthenic oxide powder is mixed homogeneously with nanometer silver powder to prepare complex function phase, complex function In phase, ruthenic oxide powder and the weight portion of two kinds of materials of nanometer silver powder are followed successively by 40% ~ 60%, 60% ~ 40%, the grain of ruthenic oxide powder Footpath is worth for 1 ~ 3 m, and the particle size values of nanometer silver powder are 10 ~ 50 nm；

C, prepare organic carrier：By organic solvent, macromolecule thickener, surfactant, plasticizer, dispersant, defoamer, touch Become agent to dissolve in 80 DEG C of water-baths to obtain organic carrier, and by adjusting the content of macromolecule thickener, so that organic carrier Viscosity control in the range of 200 ~ 300 mPa s, wherein, live in organic solvent in organic carrier, macromolecule thickener, surface Property agent, plasticizer, dispersant, defoamer, the weight portion of seven kinds of materials of thixotropic agent are followed successively by 40% ~ 70%, 25% ~ 35%, 1% ~ 5%, 1%~5%、1%~5%、1%~5%、1%~5%；

D, resistance slurry preparation：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 100 ~ 120Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm, wherein, Inorganic adhesive phase in resistance slurry, complex function phase, the weight portion of three kinds of materials of organic carrier be followed successively by 10% ~ 30%, 50% ~ 60%、20%~30%.

Beneficial effects of the present invention are：The invention discloses a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry And preparation method thereof, this preparation method is used for preparing aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, wherein, the present invention Aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry there is advantages below, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

Specific embodiment

With reference to specific embodiment, the present invention will be described.

Embodiment 1

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 20%

Complex function phase 55%

Organic carrier 25%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃15%

B₂O₃15%

K₂O10%

SrO₂20%

V₂O₅15%

TiO₂15%

ZnO 5%

Y₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 40%

Nanometer silver powder 60%；

Described organic carrier, by weight percentage, including following components：

Butyl carbitol 70%

Ethyl cellulose 20%

Span -85 2%

Dioctyl phthalate 2%

Polymethyl acid amide 2%

Organic silicon modified by polyether 2%

Castor oil hydrogenated 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment one have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment one has following performance parameter, It is specially：Slurry viscosity is 100 ± 10Pa s/10RPM, and resistive layer thickness is 12 ± 2 μm, and sheet resistance is 10 ± 5 Ω/, sheet resistance Reheating rate of change is 3.5%, and temperature-coefficient of electrical resistance is 65 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment one can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and Y₂O₃Mixed in three-dimensional material mixer Then at smelting furnace melting after closing uniformly, smelting temperature is 1200 DEG C, and temperature retention time obtained glass melts for 6 hours, then by glass Glass liquation carries out water quenching and obtains glass, finally with distilled water for medium to glass ball milling 6 hours, that is, obtain particle size values be 1 μm ~ 3 μm of microcrystalline glass powder；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By butyl carbitol, ethyl cellulose, Span -85, dioctyl phthalate, poly- methyl-prop Olefin(e) acid amine, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain organic carrier, the viscosity of organic carrier in 80 DEG C of water-baths For 200 ± 20 mPa s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 100 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 2

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 25%

Complex function phase 50%

Organic carrier 25%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃15%

B₂O₃15%

K₂O20%

SrO₂10%

V₂O₅15%

TiO₂15%

ZnO 5%

La₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 50%

Nanometer silver powder 50%；

Described organic carrier, by weight percentage, including following components：

Butyl carbitol 70%

PEG2000 20%

Span -85 2%

Dibutyl phthalate 2%

Polymethyl acid amide 2%

Organic silicon modified by polyether 2%

Castor oil hydrogenated 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment two have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment two has following performance parameter, It is specially：Slurry viscosity is 100 ± 10Pa s/10RPM, and resistive layer thickness is 11 ± 2 μm, and sheet resistance is 16 ± 5 Ω/, sheet resistance Reheating rate of change is 3.1%, and temperature-coefficient of electrical resistance is 50 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment two can adopt following preparation sides Method is prepared from, specifically,

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and La₂O₃In three-dimensional material mixer Then at smelting furnace melting after mix homogeneously, smelting temperature is 1150 DEG C, and temperature retention time obtained glass melts for 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 6 hours, that is, obtaining particle size values is 1 μ The microcrystalline glass powder of m ~ 3 μm；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By butyl carbitol, PEG2000, Span -85, dibutyl phthalate, polymethylacrylic acid Amine, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain organic carrier in 80 DEG C of water-baths, and the viscosity of organic carrier is 200±20 mPa·s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 100 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 3

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 20%

Complex function phase 50%

Organic carrier 30%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃20%

B₂O₃15%

K₂O15%

SrO₂10%

V₂O₅15%

TiO₂15%

ZnO 5%

CeO₂5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 60%

Nanometer silver powder 40%；

Described organic carrier, by weight percentage, including following components：

Butyl carbitol 70%

NC Nitroncellulose 20%

Span -85 2%

Dioctyl phthalate 2%

Polymethyl acid amide 2%

Organic silicon modified by polyether 2%

Polyamide wax 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment three have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment three has following performance parameter, It is specially：Slurry viscosity is 105 ± 10Pa s/10RPM, and resistive layer thickness is 12 ± 2 μm, and sheet resistance is 14 ± 5 Ω/, sheet resistance Reheating rate of change is 4.5%, and temperature-coefficient of electrical resistance is 70 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment three can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and CeO₂Mixed in three-dimensional material mixer Then at smelting furnace melting after closing uniformly, smelting temperature is 1150 DEG C, and temperature retention time obtained glass melts for 6 hours, then by glass Glass liquation carries out water quenching and obtains glass, finally with distilled water for medium to glass ball milling 6 hours, that is, obtain particle size values be 1 μm ~ 3 μm of microcrystalline glass powder；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By butyl carbitol, NC Nitroncellulose, Span -85, dioctyl phthalate, poly- methyl-prop Olefin(e) acid amine, organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and the viscosity of organic carrier is 200±20 mPa·s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 105 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 4

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 20%

Complex function phase 60%

Organic carrier 20%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃15%

B₂O₃15%

K₂O10%

SrO₂20%

V₂O₅15%

TiO₂15%

ZnO 5%

Gd₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 50%

Nanometer silver powder 50%；

Described organic carrier, by weight percentage, including following components：

DMF 70%

Polyvinylpyrrolidone 20%

Lecithin 2%

Dioctyl phthalate 2%

Polymethyl acid amide 2%

Organic silicon modified by polyether 2%

Thixotropy alkyd resin 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment four have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment four has following performance parameter, It is specially：Slurry viscosity is 90 ± 10Pa s/10RPM, and resistive layer thickness is 13 ± 2 μm, and sheet resistance is 15 ± 5 Ω/, sheet resistance weight Burning rate of change is 3.5%, and temperature-coefficient of electrical resistance is 100 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment four can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and Gd₂O₃In three-dimensional material mixer Then at smelting furnace melting after mix homogeneously, smelting temperature is 1150 DEG C, and temperature retention time obtained glass melts for 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 6 hours, that is, obtaining particle size values is 1 μ The microcrystalline glass powder of m ~ 3 μm；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By DMF, Polyvinylpyrrolidone, lecithin, dioctyl phthalate, Polymethyl acid amide, organic silicon modified by polyether, thixotropy alkyd resin dissolve to obtain organic carrier in 80 DEG C of water-baths, have The viscosity of airborne body is 200 ± 20 mPa s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 90 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 5

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 25%

Complex function phase 50%

Organic carrier 25%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃15%

B₂O₃15%

K₂O10%

SrO₂20%

V₂O₅20%

TiO₂10%

ZnO 5%

Nd₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 50%

Nanometer silver powder 50%；

Described organic carrier, by weight percentage, including following components：

Tributyl citrate 70%

Ethyl cellulose 20%

Lecithin 2%

Dioctyl phthalate 2%

1,4- dihydroxy sulfanilic acid 2%

Organic silicon modified by polyether 2%

Thixotropy alkyd resin 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment five have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment five has following performance parameter, It is specially：Slurry viscosity is 110 ± 10Pa s/10RPM, and resistive layer thickness is 11 ± 2 μm, and sheet resistance is 12 ± 5 Ω/, sheet resistance Reheating rate of change is 3.8%, and temperature-coefficient of electrical resistance is 80 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment five can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and Nd₂O₃In three-dimensional material mixer Then at smelting furnace melting after mix homogeneously, smelting temperature is 1150 DEG C, and temperature retention time obtained glass melts for 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 6 hours, that is, obtaining particle size values is 1 μ The microcrystalline glass powder of m ~ 3 μm；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By tributyl citrate, ethyl cellulose, lecithin, dioctyl phthalate, 1,4- bis- Hydroxyl sulfoacid amine, organic silicon modified by polyether, thixotropy alkyd resin dissolve to obtain organic carrier in 80 DEG C of water-baths, have airborne The viscosity of body is 200 ± 20 mPa s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 110 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 6

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 30%

Complex function phase 50%

Organic carrier 20%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃20%

B₂O₃20%

K₂O10%

SrO₂20%

V₂O₅10%

TiO₂10%

ZnO 5%

Pr₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 50%

Nanometer silver powder 50%；

Described organic carrier, by weight percentage, including following components：

Butyl carbitol acetate 70%

PEG2000 20%

Span -85 2%

Dioctyl phthalate 2%

Triammonium citrate 2%

Organic silicon modified by polyether 2%

Castor oil hydrogenated 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment six have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment six has following performance parameter, It is specially：Slurry viscosity is 105 ± 10Pa s/10RPM, and resistive layer thickness is 11 ± 2 μm, and sheet resistance is 10 ± 5 Ω/, sheet resistance Reheating rate of change is 4.2%, and temperature-coefficient of electrical resistance is 75 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment six can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and Pr₂O₃In three-dimensional material mixer Then at smelting furnace melting after mix homogeneously, smelting temperature is 1150 DEG C, and temperature retention time obtained glass melts for 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 6 hours, that is, obtaining particle size values is 1 μ The microcrystalline glass powder of m ~ 3 μm；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By butyl carbitol acetate, PEG2000, Span -85, dioctyl phthalate, citric acid Triamine, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain organic carrier in 80 DEG C of water-baths, and the viscosity of organic carrier is 200±20 mPa·s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 105 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 7

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 20%

Complex function phase 55%

Organic carrier 25%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃15%

B₂O₃15%

K₂O10%

SrO₂20%

V₂O₅15%

TiO₂15%

ZnO 5%

Eu₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 55%

Nanometer silver powder 45%；

Described organic carrier, by weight percentage, including following components：

DMF 70%

Polyvinyl butyral resin 20%

Span -85 2%

Dioctyl phthalate 2%

Polymethyl acid amide 2%

Polydimethylsiloxane 2%

Castor oil hydrogenated 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment seven have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment seven has following performance parameter, It is specially：Slurry viscosity is 100 ± 10Pa s/10RPM, and resistive layer thickness is 10 ± 2 μm, and sheet resistance is 15 ± 5 Ω/, sheet resistance Reheating rate of change is 3.0%, and temperature-coefficient of electrical resistance is 90 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment seven can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and Eu₂O₃In three-dimensional material mixer Then at smelting furnace melting after mix homogeneously, smelting temperature is 1150 DEG C, and temperature retention time obtained glass melts for 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 6 hours, that is, obtaining particle size values is 1 μ The microcrystalline glass powder of m ~ 3 μm；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：Will be pungent to DMF, polyvinyl butyral resin, Span -85, phthalic acid two Ester, polymethyl acid amide, polydimethylsiloxane, castor oil hydrogenated dissolve to obtain organic carrier in 80 DEG C of water-baths, have The viscosity of airborne body is 200 ± 20 mPa s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 100 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Embodiment 8

A kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, by weight percentage, including following components：

Inorganic adhesive phase 30%

Complex function phase 50%

Organic carrier 20%；

Described inorganic adhesive phase, by weight percentage, including following components：

Bi₂O₃15%

B₂O₃10%

K₂O15%

SrO₂10%

V₂O₅20%

TiO₂20%

ZnO 5%

Sm₂O₃5%；

Described complex function phase, by weight percentage, including following components：

Ruthenic oxide 60%

Nanometer silver powder 40%；

Described organic carrier, by weight percentage, including following components：

Mixed dibasic acid ester 70%

Polyvinylpyrrolidone 20%

Lecithin 2%

Dioctyl phthalate 2%

Triammonium citrate 2%

Organic silicon modified by polyether 2%

Castor oil hydrogenated 2%.

By above-mentioned material proportion, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment eight have with Lower advantage, specially：

1st, select Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder as Binder Phase, by Bi₂O₃- B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂The thermal coefficient of expansion of-ZnO microcrystalline glass in series, vitrification point, the regulation of softening temperature are allowed to Exhausted with the thermal coefficient of expansion of the thick-film resistor track layer that rare earth oxide, complex function phase, organic carrier are combined composition and aluminium base Edge layer is mated and is had good binding ability, resistive layer can be made to sinter between 450 ~ 550 DEG C simultaneously, it is to avoid lead is grinding The injury sent out, use and after discarded, environment, human body are caused, can solve high-power resistance or heating manufacturing is badly in need of The problem solving, meets RoHS Directive（2002/95/EC）Require；

2nd, the mixed powder adopting ruthenic oxide powder and nanometer silver powder as complex function phase, for preparing based on aluminum alloy base material Intermediate sintering temperature resistance slurry, the printing characteristic of this resistance slurry is good, burn till characteristic good, is had attached with the resistance track that it is prepared The advantages of put forth effort that strong, ageing-resistant, electric conductivity is good, heating efficiency is high and be compatible with aluminium base insulating barrier, passes through to change no simultaneously The composition of machine bonding phase and complex function phase, weight proportion and sintering curre, not only can be effectively reduced the sintering of resistive layer Temperature, the sheet resistance of regulation resistive layer, make the sheet resistance reheating rate of change of resistive layer be less than 5%, temperature-coefficient of electrical resistance is less than simultaneously again 200×10^-6/℃；

3rd, adopt the intermediate sintering temperature resistance slurry based on aluminum alloy base material of present invention preparation, can be used for preparing light weight, heat conduction Good, the high-power aluminium alloy base plate thick film circuit heating of property, is widely used in industry, household electrical appliance, war industry field, pole The earth improves efficiency of energy utilization.

In addition, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment eight has following performance parameter, It is specially：Slurry viscosity is 90 ± 10Pa s/10RPM, and resistive layer thickness is 12 ± 2 μm, and sheet resistance is 14 ± 5 Ω/, sheet resistance weight Burning rate of change is 2.7%, and temperature-coefficient of electrical resistance is 80 ± 10 × 10^-6/℃.

Wherein, the aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry of the present embodiment eight can adopt following preparation sides Method is prepared from, specifically, a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, walk including following Suddenly：

A kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry, comprises the following steps：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and Sm₂O₃In three-dimensional material mixer Then at smelting furnace melting after mix homogeneously, smelting temperature is 1250 DEG C, and temperature retention time obtained glass melts for 6 hours, then will Glass melts carry out water quenching and obtain glass, and finally with distilled water for medium to glass ball milling 6 hours, that is, obtaining particle size values is 1 μ The microcrystalline glass powder of m ~ 3 μm；

B, preparation complex function phase：By ruthenic oxide powder, nanometer silver powder mix homogeneously to prepare complex function phase；

C, prepare organic carrier：By mixed dibasic acid ester, Polyvinylpyrrolidone, lecithin, dioctyl phthalate, Fructus Citri Limoniae Sour triamine, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain organic carrier, the viscosity of organic carrier in 80 DEG C of water-baths For 200 ± 20 mPa s；

D, prepare resistance slurry：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 90 ± 10Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm.

Above content is only presently preferred embodiments of the present invention, for those of ordinary skill in the art, according to the present invention's Thought, all will change in specific embodiments and applications, and this specification content should not be construed as to the present invention Restriction.

Claims (10)

1. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry is it is characterised in that include the thing of following weight portion Material, specially：

Inorganic adhesive phase 10% ~ 30%

Complex function phase 50% ~ 60%

Organic carrier 20% ~ 30%；

Wherein, inorganic bond phase is by Bi₂O₃-B₂O₃-K₂O-SrO₂-V₂O₅-TiO₂- ZnO microcrystalline glass in series powder and rare-earth oxidation Thing forms, Bi in inorganic adhesive phase₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO, the weight portion of eight kinds of materials of rare earth oxide Be followed successively by 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 5% ~ 10%, 5-10%；

Complex function phase is the mixed powder of ruthenic oxide powder and nanometer silver powder, and ruthenic oxide powder and two kinds of materials of nanometer silver powder Weight portion is followed successively by 40% ~ 60%, 60% ~ 40%；

Organic carrier is organic solvent, macromolecule thickener, surfactant, plasticizer, dispersant, defoamer, thixotropic agent seven Plant the mixture that material is formed, organic solvent, macromolecule thickener, surfactant, plasticizer, dispersion in organic carrier Agent, defoamer, the weight portion of seven kinds of materials of thixotropic agent be followed successively by 40% ~ 70%, 25% ~ 35%, 1% ~ 5%, 1% ~ 5%, 1% ~ 5%, 1% ~ 5%、1%~5%.

2. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute The particle size values stating microcrystalline glass powder are 1 ~ 3 μm, and softening point is 300～400 DEG C, and average coefficient of linear expansion is 18～25 × 10^-6/ ℃.

3. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute Stating rare earth oxide is La₂O₃、Sc₂O₃、Y₂O₃、CeO₂、Sm₂O₃、Gd₂O₃、Nd₂O₃、Pr₂O₃、Eu₂O₃One of, rare-earth oxidation The particle size values of thing are 1 ~ 3 μm.

4. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute The particle size values stating ruthenic oxide powder in complex function phase are 1 ~ 3 m, and apparent density is 1.0 ~ 2.0 g/cm³, tap density is 1.0 ~2.0 g/cm³, the particle size values of nanometer silver powder are 10 ~ 50nm, and apparent density is 2.0 ~ 2.5 g/cm³, tap density is 3.5 ~ 4.0 g/cm³.

5. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute State organic solvent be Oleum Terebinthinae, terpineol, hexadecanol, butyl carbitol, butyl carbitol acetate, diethylene glycol monomethyl ether, Dibutyl ethylene glycol ether, ethylene glycol ether acetate, tributyl citrate, tributyl phosphate, GBL, mixed dibasic acid One of ester, N-Methyl pyrrolidone, DMF, N,N-dimethylacetamide, dimethyl sulfoxide or at least Two kinds of mixture being formed.

6. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute State macromolecule thickener be ethyl cellulose, hydroxyethyl cellulose, carboxymethyl cellulose, NC Nitroncellulose, Macrogol 2000, One of polyvinyl alcohol, polyvinyl butyral resin, polyvinyl formal-acetal, polyvinyl acetate, Polyvinylpyrrolidone Or at least two mixture being formed.

7. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute State surfactant be lecithin, the mixture that formed of one of Span -85, tween 80 or at least two；Described point Powder is triammonium citrate, one of polymethyl acid amide, 1,4- dihydroxy sulfanilic acid or at least two are formed Mixture.

8. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute Stating defoamer is organosiloxane, polyethers, Polyethylene Glycol, ethylene-acrylic acid copolymer, polyglyceryl fatty acid ester, poly dimethyl The mixture that one of siloxanes, organic silicon modified by polyether or at least two are formed.

9. a kind of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry according to claim 1 it is characterised in that：Institute Stating plasticizer is dimethyl phthalate, diethyl phthalate, dibutyl phthalate, dioctyl phthalate One of or at least two mixture being formed；Described thixotropic agent be hexadecanol, polyamide wax, castor oil hydrogenated, touch The mixture that one of degeneration alkyd resin, organobentonite or aerosil or at least two are formed.

10. a kind of preparation method of aluminium alloy base plate thick film circuit intermediate sintering temperature resistance slurry is it is characterised in that include following Processing step, specially：

A, prepare inorganic adhesive phase：By Bi₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, ZnO and rare earth oxide be in three-dimensional blender Mix homogeneously in machine, Bi in mixture₂O₃、B₂O₃、K₂O、SrO₂、V₂O₅、TiO₂, the weight of ZnO and eight kinds of materials of rare earth oxide Amount part is followed successively by 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 10% ~ 20%, 5% ~ 10%, 5-10%, mixing is all Then at smelting furnace melting after even, smelting temperature is 1000 DEG C ~ 1300 DEG C, and temperature retention time obtained glass melts, then for 3 ~ 6 hours Glass melts are carried out water quenching and obtains glass, finally with distilled water for medium to glass ball milling 4 ~ 6 hours, that is, obtain particle size values For 1 μm ~ 3 μm of microcrystalline glass powder；

B, preparation complex function phase：Ruthenic oxide powder is mixed homogeneously with nanometer silver powder to prepare complex function phase, complex function In phase, ruthenic oxide powder and the weight portion of two kinds of materials of nanometer silver powder are followed successively by 40% ~ 60%, 60% ~ 40%, the grain of ruthenic oxide powder Footpath is worth for 1 m ~ 3 m, and the particle size values of nanometer silver powder are 10 ~ 50 nm；

C, prepare organic carrier：By organic solvent, macromolecule thickener, surfactant, plasticizer, dispersant, defoamer, touch Become agent to dissolve in 80 DEG C of water-baths to obtain organic carrier, and by adjusting the content of macromolecule thickener, so that organic carrier Viscosity control in the range of 200 mPa s ~ 300 mPa s, wherein, organic solvent, macromolecule thickening in organic carrier Agent, surfactant, plasticizer, dispersant, defoamer, the weight portion of seven kinds of materials of thixotropic agent be followed successively by 40% ~ 70%, 25% ~ 35%、1%~5%、1%~5%、1%~5%、1%~5%、1%~5%；

D, resistance slurry preparation：By inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then it is placed in Repeatedly grind in three-roll grinder, be 100 ~ 120Pa s to obtain range of viscosities, the fineness resistance slurry that is less than 8 μm, wherein, Inorganic adhesive phase in resistance slurry, complex function phase, the weight portion of three kinds of materials of organic carrier be followed successively by 10% ~ 30%, 50% ~ 60%、20%~30%.