CN107358991A - A kind of dielectric paste and its preparation technology for aluminium alloy base plate thick film circuit - Google Patents
A kind of dielectric paste and its preparation technology for aluminium alloy base plate thick film circuit Download PDFInfo
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- CN107358991A CN107358991A CN201710541981.4A CN201710541981A CN107358991A CN 107358991 A CN107358991 A CN 107358991A CN 201710541981 A CN201710541981 A CN 201710541981A CN 107358991 A CN107358991 A CN 107358991A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
- H01B3/087—Chemical composition of glass
Abstract
The invention discloses a kind of dielectric paste and its preparation technology for aluminium alloy base plate thick film circuit, slurry are composed of the following components：Microcrystalline glass powder 60 75%, binding agent 25 40%；Wherein, microcrystalline glass powder is by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2、Co2O3Composition.Using above-mentioned raw materials prepare microcrystalline glass powder smelting temperature it is low so that when it prepares dielectric layer sintering temperature be less than aluminium alloy base plate melting temperature, when preparing dielectric layer will not wounded substrate, do not contain lead in raw material in addition, meet environmental requirement.Obtained dielectric layer thermal coefficient of expansion and aluminium alloy base plate matches, there is good binding ability, firm network structure can be formed, so that composite microcrystallite glass dielectric has excellent hardness and pliability, particular/special requirement when high-power aluminium alloy base plate thick film circuit is in harsh environments disclosure satisfy that.The preparation technology of the slurry is simple simultaneously, is readily produced, obtained dielectric paste function admirable.
Description
Technical field
The invention belongs to thick film circuit technique field, is related to a kind of dielectric paste for making thick film circuit and its prepares work
Skill, relate in particular to a kind of aluminium alloy base plate unleaded, alkali metal-free intermediate sintering temperature dielectric paste and its preparation technology.
Background technology
Thick film circuit is one kind of integrated circuit, refers to and passes through resistance, inductance, electric capacity, semiconductor element and interconnecting lead
The processes such as printing, sintering and welding have the circuit unit of certain function made of on substrate.Its flexible design, technique letter
Just, cost is cheap, is resistant to high voltage, bigger power and electric current, extensively should have been obtained in industrial electronics field
With.
Thick film is several microns of film layers to some tens of pm prepared on substrate with printing-sintering technology, manufactures the material of thick film
Expect that for coating or slurry, according to thick film property, slurry can be divided into conductor paste, resistance slurry, dielectric paste, insulation paste
And packaging slurry, wherein dielectric paste are typically equably suspended in organic solution by low-melting-point glass and ceramic powder particle and are made, led to
The medium thick film of different performance can be obtained by crossing the relative amount for changing glass and ceramics or composition, meet to make different thick films
The demand of capacitor.
It is outstanding to the mechanics and thermodynamic property of substrate as thick film circuit element constantly develops to multilayer and miniaturization
It is that thermal conductivity proposes higher requirement, aluminium alloy base plate due to density is small, ductility is good, thermal conductivity is good, it is cold and hot plus
Work processability is excellent and toughness it is high make its can as the substrate of thick film circuit element, but its exist thermal coefficient of expansion with often
With the unmatched problem of electric slurry, therefore, aluminium alloy base plate such as is used, slurry need to meet claimed below：(1) due to aluminium alloy
Melting temperature is low (660 DEG C or so), and slurry can not be prepared with high-sintering process, can only be burnt at a temperature of less than aluminum alloy melts
Knot, while the good requirement of adhesive force, matching need to be met, in addition, to meet the requirement of element electric property, can be on substrate
Multiple silk-screen printing, dry and burn till to obtain adequate thickness, should also have screen printing property and multiple refiring capability；(2)
Because dielectric paste in substrate surface can form insulating barrier, it need to possess excellent physical property, such as expansion character, thermal conductivity
Bonding force of energy, heat resistance and aluminium alloy base plate etc.；(3) as aluminium alloy base plate and resistance and electricity and insulating barrier, burn
Dielectric paste after knot should also have good electric property, such as breakdown strength, insulaion resistance, Leakage Current；(4) thick film is worked as
Circuit is as electronic component in use, dielectric paste therein should also meet environmental requirement.
At present, the dielectric paste of more maturation is nearly all applied to stainless steel substrate on the market, applied to aluminium alloy base plate
The rare report of dielectric paste, Chinese patent CN101740160B, CN102158993B, CN105176103A and United States Patent (USP)
US2016185651A1 is disclosed for aluminium base thick film circuit dielectric slurry and preparation method thereof, but above-mentioned aluminium base
It is higher to there is sintering temperature with dielectric paste, fragile substrate during preparation, the performance such as breakdown voltage and insulaion resistance can not still expire
The high request of sufficient aluminium alloy base plate electric heating element.
The content of the invention
Therefore, the present invention is exactly to solve above-mentioned technical problem, so as to propose that a kind of sintering temperature is low, use of excellent performance
In unleaded, alkali metal-free the intermediate sintering temperature dielectric paste and its preparation technology of aluminium alloy base plate thick film circuit.
In order to solve the above technical problems, the technical scheme is that：
The present invention provides a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, by following
Component forms：Microcrystalline glass powder 60-75%, binding agent 25-40%；Wherein, the microcrystalline glass powder by percentage to the quality by
Following components forms：SiO220-40%, Bi2O320-30%, B2O35-15%, BaO 5-15%, CaO 5-10%, ZnO
1-5%, Al2O31-5%, V2O51-5%, TiO25-10%, Co2O31-3%.
Preferably, the binding agent is organic binder bond, the organic binder bond is in parts by weight by following components group
Into：Organic solvent 40-75 parts, macromolecule thickener 5-20 parts, plasticizer 1-5 parts, dispersant 1-5 parts, defoamer 1-5 parts, touch
Become agent 1-5 parts.
Preferably, the particle diameter of the microcrystalline glass powder is 1-3 μm μm, softening point is 350-450 DEG C, average line expansion system
Number is 18 × 10-6/ DEG C~25 × 10-6/℃。
Preferably, the organic solvent is turpentine oil, terpinol, hexadecanol, butyl carbitol, butyl carbitol acetic acid
Ester, diethylene glycol monomethyl ether, dibutyl ethylene glycol ether, ethylene glycol ether acetate, ATBC, tributyl phosphate, 1,
4- butyrolactone, mixed dibasic acid ester, 1-METHYLPYRROLIDONE, DMF, DMA, diformazan are sub-
At least one of sulfone.
Preferably, the macromolecule thickener is ethyl cellulose, polyethylene glycol, polyvinyl butyral resin, polyethylene
Alcohol contracts the first and second aldehyde, polyvinyl acetate, polyvinylpyrrolidone, hydrogenated rosin resin, acrylate, epoxy resin, poly-
At least one of urethane resin.
Preferably, the plasticizer is repefral, diethyl phthalate, the fourth of phthalic acid two
At least one of ester, dioctyl phthalate；The dispersant is triammonium citrate, polymethyl acid amide, 1,4- bis-
At least one of hydroxyl sulfoacid amine.
Preferably, the defoamer be organosiloxane, it is polyethers, polyethylene glycol, ethylene-acrylic acid copolymer, poly- sweet
At least one of oil and fat acid esters, dimethyl silicone polymer, organic silicon modified by polyether；The thixotropic agent is hexadecanol, polyamides
At least one of amine wax, rilanit special, thixotropy alkyd resin, organobentonite or aerosil.
The present invention also provides a kind of preparation technology of the described dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Melting is glass melting thing after example is well mixed, will produce devitrified glass after the glass melting thing water quenching, is obtained after grinding micro-
Crystal glass powder；
B, prepare binding agent, by organic solvent, macromolecule thickener, plasticizer, dispersant, defoamer and thixotropic agent press than
Dissolved after example mixing, filter out impurity and produce organic binder bond；
C, dielectric paste is prepared, fineness is ground to after the microcrystalline glass powder and binding agent are dispersed with stirring less than 5 μm, i.e.,
Obtain dielectric paste.
Preferably, in the step a, smelting temperature is 1200-1400 DEG C, smelting time 2-4h；It is described ground
Journey is specially：Using distilled water as medium to devitrified glass ball milling 6-10h, the microcrystalline glass powder that particle diameter is 1-3 μm is produced.
Preferably, in the step b, described be dissolved under 80 DEG C of water bath condition is carried out, the organic binder bond
Viscosity is 200-300mPas；The dielectric paste viscosity that the step c is obtained is 40-60Pas.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
(1) dielectric paste of the present invention for aluminium alloy base plate thick film circuit, by percentage to the quality by following
Component forms：Microcrystalline glass powder 60-75%, binding agent 25-40%；Wherein, microcrystalline glass powder is by percentage to the quality by following
Component forms：SiO220-40%, Bi2O320-30%, B2O35-15%, BaO 5-15%, CaO 5-10%, ZnO 1-
5%, Al2O31-5%, V2O51-5%, TiO25-10%, Co2O31-3%.The microcrystalline glass powder prepared using above-mentioned raw materials
Smelting temperature is low so that sintering temperature can be down to 450-550 DEG C when it prepares dielectric layer, less than the melting temperature of aluminium alloy base plate
Degree, when preparing dielectric layer will not wounded substrate, do not contain lead in raw material in addition, its after researching and developing, using and be discarded to environment,
The equal fanout free region of human body, meets environmental requirement.Meanwhile the devitrified glass and the dielectric layer thermal coefficient of expansion of the compound composition of binding agent
Match with aluminium alloy base plate, and have good binding ability, firm network structure can be formed so that composite microcrystallite glass is exhausted
Edge medium has excellent hardness and pliability, disclosure satisfy that high-power aluminium alloy base plate thick film circuit is in harsh environments
When particular/special requirement.
(2) preparation technology of the dielectric paste of the present invention for aluminium alloy base plate thick film circuit, method is simple, easily
In manufacturing, obtained dielectric paste function admirable, there is good rheological characteristic, thixotropy, sintering temperature is low, the medium slurry
The dielectric layer that material sintering is formed has the advantages of adhesive force is strong, insulaion resistance is high, breakdown strength is big, and can effectively prevent aluminium alloy
Substrate slurry in sintering process to underlying dielectric layer spread, so as to greatly improve the security of aluminium base electric heating element and
Stability.
Embodiment
In order that present disclosure is more likely to be clearly understood, below according to specific embodiment of the invention to this hair
It is bright to be described in further detail.
Embodiment 1
The present embodiment provide a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, its by
Following components forms：Microcrystalline glass powder 75%, binding agent 25%.Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO220%, Bi2O330%, B2O315%, BaO 10%, CaO 5%, ZnO 5%, Al2O35%,
V2O54%, TiO25%, Co2O31%, the particle diameter of microcrystalline glass powder described in the present embodiment is 1 μm, and softening point is 350 DEG C,
Average coefficient of linear expansion is 18 × 10-6/℃。
The binding agent is organic binder bond, and it is composed of the following components in parts by weight：Organic solvent butyl carbitol
40 parts, 20 parts of macromolecule thickener ethyl cellulose, 1 part of plasticizer phthalic acid dibutyl ester, dispersant polymethylacrylic acid
5 parts of amine, 1 part of defoamer organic silicon modified by polyether, 5 parts of thixotropic agent rilanit special.
The present embodiment also provides a kind of technique for preparing the dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Example is incubated 4h after being well mixed in three-dimensional material mixer at 1200 DEG C, and melting is glass melting thing, by the glass melting thing
Devitrified glass is produced after water quenching, microcrystalline glass powder then is obtained to the devitrified glass ball milling 6h using distilled water as medium；
B, prepare binding agent, by butyl carbitol, ethyl cellulose, dibutyl phthalate, polymethyl acid amide,
Organic silicon modified by polyether, rilanit special dissolve after mixing in proportion under 80 DEG C of water bath condition, then are filtered with the nylon of 500 mesh
Net filters out impurity and produces the organic binder bond that viscosity is 200mPas；
C, dielectric paste is prepared, the grinding of three rollers is placed in after the microcrystalline glass powder and binding agent are dispersed with stirring in a reservoir
Machine is ground to fineness less than 5 μm, is 1 μm in the present embodiment, then it is 40Pa to filter out impurity to produce viscosity with 500 mesh nylon leaching nets
S dielectric paste.
Obtained dielectric paste is printed into film forming on aluminium alloy base plate with silk screen, sintering obtains dielectric layer at 500 DEG C,
The thickness of the dielectric layer is 118 μm, tests its physical property, as a result as follows：The breakdown voltage (AC) of the dielectric layer>
2000V, insulaion resistance (250V) ＞ 50M Ω, leakage current (250V)<2mA.
Embodiment 2
The present embodiment provide a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, its by
Following components forms：Microcrystalline glass powder 60%, binding agent 40%.Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO240%, Bi2O320%, B2O35%, BaO 15%, CaO 10%, ZnO 1%, Al2O31%,
V2O51%, TiO26%, Co2O31%, the particle diameter of microcrystalline glass powder described in the present embodiment is 3 μm, and softening point is 450 DEG C,
Average coefficient of linear expansion is 25 × 10-6/℃。
The binding agent is organic binder bond, and it is composed of the following components in parts by weight：75 parts of organic solvent turpentine oil,
5 parts of macromolecule thickener polyvinyl butyral resin, 5 parts of plasticizer phthalic acid diethylester, 1 part of dispersant triammonium citrate,
5 parts of defoamer polyethers, 1 part of thixotropic agent hexadecanol.
The present embodiment also provides a kind of technique for preparing the dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Example is incubated 2h after being well mixed in three-dimensional material mixer at 1400 DEG C, and melting is glass melting thing, by the glass melting thing
Devitrified glass is produced after water quenching, microcrystalline glass powder then is obtained to the devitrified glass ball milling 10h using distilled water as medium；
B, binding agent is prepared, by turpentine oil, polyvinyl butyral resin, diethyl phthalate, triammonium citrate, poly-
Ether, hexadecanol dissolve after mixing in proportion under 80 DEG C of water bath condition, then with the nylon leaching net of 500 mesh filter out impurity produce it is viscous
Spend the organic binder bond for 300mPas；
C, dielectric paste is prepared, the grinding of three rollers is placed in after the microcrystalline glass powder and binding agent are dispersed with stirring in a reservoir
Machine is ground to fineness less than 5 μm, is 3 μm in the present embodiment, then it is 60Pa to filter out impurity to produce viscosity with 500 mesh nylon leaching nets
S dielectric paste.
Obtained dielectric paste is printed into film forming on aluminium alloy base plate with silk screen, sintering obtains dielectric layer at 500 DEG C,
The thickness of the dielectric layer is 120 μm, tests its physical property, as a result as follows：The breakdown voltage (AC) of the dielectric layer>
2000V, insulaion resistance (250V) ＞ 50M Ω, leakage current (250V)<2mA.
Embodiment 3
The present embodiment provide a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, its by
Following components forms：Microcrystalline glass powder 70%, binding agent 30%.Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO230%, Bi2O325%, B2O38%, BaO 5%, CaO 8%, ZnO 2%, Al2O34%, V2O5
5%, TiO210%, Co2O33%, the particle diameter of microcrystalline glass powder described in the present embodiment is 2 μm, and softening point is 400 DEG C, average
Linear expansion coefficient is 20 × 10-6/℃。
The binding agent is organic binder bond, and it is composed of the following components in parts by weight：
Organic solvent：55 parts of the mixture of terpinol, diethylene glycol monomethyl ether and dibutyl ethylene glycol ether, the quality of three
Than for 1:1：2；Macromolecule thickener：3 parts of the mixture of hydrogenated rosin resin and acrylate, the mass ratio of the two are 2:
1；Plasticizer：3 parts of the mixture of repefral and dioctyl phthalate, the mass ratio of the two are 2:1；It is scattered
2 parts of agent 1,4- dihydroxy sulfanilic acid；2 parts of defoamer ethylene-acrylic acid copolymer；Thixotropic agent organobentonite, gas phase titanium dioxide
3 parts of the mixture of silicon, the mass ratio of the two are 1:1.
The present embodiment also provides a kind of technique for preparing the dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Example is incubated 3h after being well mixed in three-dimensional material mixer at 1300 DEG C, and melting is glass melting thing, by the glass melting thing
Devitrified glass is produced after water quenching, microcrystalline glass powder then is obtained to the devitrified glass ball milling 8h using distilled water as medium；
B, binding agent is prepared, by terpinol, diethylene glycol monomethyl ether, dibutyl ethylene glycol ether, hydrogenated rosin resin, propylene
Acid ester resin, repefral, dioctyl phthalate, 1,4- dihydroxy sulfanilic acid, ethylene-acrylic acid copolymer
Thing, organobentonite, aerosil dissolve after mixing in proportion under 80 DEG C of water bath condition, then the nylon with 500 mesh
Filter screen filters out impurity and produces the organic binder bond that viscosity is 250mPas；
C, dielectric paste is prepared, the grinding of three rollers is placed in after the microcrystalline glass powder and binding agent are dispersed with stirring in a reservoir
Machine is ground to fineness less than 5 μm, is 2 μm in the present embodiment, then it is 50Pa to filter out impurity to produce viscosity with 500 mesh nylon leaching nets
S dielectric paste.
Obtained dielectric paste is printed into film forming on aluminium alloy base plate with silk screen, sintering obtains dielectric layer at 500 DEG C,
The thickness of the dielectric layer is 125 μm, tests its physical property, as a result as follows：The breakdown voltage (AC) of the dielectric layer>
2000V, insulaion resistance (250V) ＞ 50M Ω, leakage current (250V)<2mA.
Embodiment 4
The present embodiment provide a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, its by
Following components forms：Microcrystalline glass powder 65%, binding agent 35%.Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO235%, Bi2O322%, B2O310%, BaO 7%, CaO 7%, ZnO 3%, Al2O34%, V2O5
3%, TiO27%, Co2O32%, the particle diameter of microcrystalline glass powder described in the present embodiment is 2.5 μm, and softening point is 410 DEG C, is put down
Equal linear expansion coefficient is 22 × 10-6/℃。
The binding agent is organic binder bond, and it is composed of the following components in parts by weight：
Organic solvent：ATBC, tributyl phosphate, 60 parts of the mixture of GBL, the mass ratio of three
For 1:2:1；Macromolecule thickener：Epoxy resin, polyurethane resin, 3.5 parts of the mixture of polyvinyl acetate, the quality of three
Than for 2:1：1；Plasticizer：3.8 parts of dioctyl phthalate；Dispersant：The mixing of triammonium citrate, polymethyl acid amide
2.8 parts of thing, the mass ratio of the two are 1:1；Defoamer：3 parts of the mixture of dimethyl silicone polymer, organic silicon modified by polyether, two
The mass ratio of person is 2:1；3.5 parts of thixotropic agent thixotropy alkyd resin.
The present embodiment also provides a kind of technique for preparing the dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Example is incubated 3.2h after being well mixed in three-dimensional material mixer at 1350 DEG C, and melting is glass melting thing, by the glass melting
Devitrified glass is produced after thing water quenching, microcrystalline glass powder then is obtained to the devitrified glass ball milling 7h using distilled water as medium；
B, binding agent is prepared, by ATBC, tributyl phosphate, GBL, epoxy resin, polyurethane tree
It is fat, polyvinyl acetate, dioctyl phthalate, triammonium citrate, polymethyl acid amide, dimethyl silicone polymer, poly-
Ether modified organic silicon, thixotropy alkyd resin dissolve after mixing in proportion under 80 DEG C of water bath condition, then the nylon with 500 mesh
Filter screen filters out impurity and produces the organic binder bond that viscosity is 260mPas；
C, dielectric paste is prepared, the grinding of three rollers is placed in after the microcrystalline glass powder and binding agent are dispersed with stirring in a reservoir
Machine is ground to fineness less than 5 μm, is 2.5 μm in the present embodiment, then with 500 mesh nylon leaching nets filters out impurity and produce viscosity and be
55Pas dielectric paste.
Obtained dielectric paste is printed into film forming on aluminium alloy base plate with silk screen, sintering obtains dielectric layer at 500 DEG C,
The thickness of the dielectric layer is 116 μm, tests its physical property, as a result as follows：The breakdown voltage (AC) of the dielectric layer>
2000V, insulaion resistance (250V) ＞ 50M Ω, leakage current (250V)<2mA.
Embodiment 5
The present embodiment provide a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, its by
Following components forms：Microcrystalline glass powder 68%, binding agent 32%.Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO228%, Bi2O325%, B2O312.4%, BaO 9%, CaO 8%, ZnO 2.5%, Al2O3
3.5%, V2O53.5%, TiO26.5%, Co2O31.6%, the particle diameter of microcrystalline glass powder described in the present embodiment is 2.8 μm,
Softening point is 380 DEG C, and average coefficient of linear expansion is 21 × 10-6/℃。
The binding agent is organic binder bond, and it is composed of the following components in parts by weight：
Organic solvent：1-METHYLPYRROLIDONE, DMF, DMA, dimethyl sulfoxide
66 parts of mixture, four mass ratio is 1:1:2:3；Macromolecule thickener：The mixture of polyvinylpyrrolidone, polyethylene glycol
4 parts, the mass ratio of the two is 1：1；Plasticizer：4 parts of the mixture of repefral, diethyl phthalate, two
The mass ratio of person is 2:1；Dispersant：4 parts of 1,4- dihydroxy sulfanilic acid；Defoamer：3.5 parts of polyglyceryl fatty acid ester；Thixotropic agent：
3.8 parts of the mixture of polyamide wax, rilanit special, the mass ratio of the two are 1:2.
The present embodiment also provides a kind of technique for preparing the dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Example is incubated 3.8h after being well mixed in three-dimensional material mixer at 1250 DEG C, and melting is glass melting thing, by the glass melting
Devitrified glass is produced after thing water quenching, microcrystalline glass powder then is obtained to the devitrified glass ball milling 7.5h using distilled water as medium；
B, binding agent is prepared, by 1-METHYLPYRROLIDONE, DMF, DMA, diformazan
Sulfoxide, polyvinylpyrrolidone, polyethylene glycol, repefral, diethyl phthalate, 1,4- dihydroxy sulfonic acid
Amine, polyglyceryl fatty acid ester, polyamide wax, rilanit special dissolve after mixing in proportion under 80 DEG C of water bath condition, then use
The nylon leaching net of 500 mesh filters out impurity and produces the organic binder bond that viscosity is 280mPas；
C, dielectric paste is prepared, the grinding of three rollers is placed in after the microcrystalline glass powder and binding agent are dispersed with stirring in a reservoir
Machine is ground to fineness less than 5 μm, is 2.8 μm in the present embodiment, then with 500 mesh nylon leaching nets filters out impurity and produce viscosity and be
52Pas dielectric paste.
Obtained dielectric paste is printed into film forming on aluminium alloy base plate with silk screen, sintering obtains dielectric layer at 500 DEG C,
The thickness of the dielectric layer is 118 μm, tests its physical property, as a result as follows：The breakdown voltage (AC) of the dielectric layer>
2000V, insulaion resistance (250V) ＞ 50M Ω, leakage current (250V)<2mA.
Embodiment 6
The present embodiment provide a kind of dielectric paste for aluminium alloy base plate thick film circuit, by percentage to the quality, its by
Following components forms：Microcrystalline glass powder 71%, binding agent 29%.Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO230%, Bi2O327%, B2O39%, BaO 10%, CaO 6.5%, ZnO 3%, Al2O3
3.2%, V2O52.8%, TiO26.5%, Co2O32%, the particle diameter of microcrystalline glass powder described in the present embodiment is 1.8 μm, soft
It is 375 DEG C to change point, and average coefficient of linear expansion is 22.5 × 10-6/℃。
The binding agent is organic binder bond, and it is composed of the following components in parts by weight：
Organic solvent：Hexadecanol, butyl carbitol acetate, 56 parts of the mixture of mixed dibasic acid ester, the quality of three
Than for 2:3:2；Macromolecule thickener：4.2 parts of polyvinyl formal acetal；Plasticizer：1.5 parts of repefral；Point
Powder：1.8 parts of triammonium citrate；Defoamer：2.5 parts of the mixture of organosiloxane, polyethylene glycol, the mass ratio of the two are 3:
1；Thixotropic agent：1.8 parts of organobentonite.
The present embodiment also provides a kind of technique for preparing the dielectric paste for aluminium alloy base plate thick film circuit, and it is wrapped
Include following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3By than
Example is incubated 2.8h after being well mixed in three-dimensional material mixer at 1280 DEG C, and melting is glass melting thing, by the glass melting
Devitrified glass is produced after thing water quenching, microcrystalline glass powder then is obtained to the devitrified glass ball milling 7h using distilled water as medium；
B, prepare binding agent, by hexadecanol, butyl carbitol acetate, mixed dibasic acid ester, polyvinyl formal acetal,
Repefral, triammonium citrate, organosiloxane, polyethylene glycol, organobentonite mix in proportion after at 80 DEG C
Water bath condition under dissolve, then filter out impurity with the nylon leaching net of 500 mesh and produce the organic binder bond that viscosity is 220mPas；
C, dielectric paste is prepared, the grinding of three rollers is placed in after the microcrystalline glass powder and binding agent are dispersed with stirring in a reservoir
Machine is ground to fineness less than 5 μm, is 1.8 μm in the present embodiment, then with 500 mesh nylon leaching nets filters out impurity and produce viscosity and be
50Pas dielectric paste.
Obtained dielectric paste is printed into film forming on aluminium alloy base plate with silk screen, sintering obtains dielectric layer at 500 DEG C,
The thickness of the dielectric layer is 118 μm, tests its physical property, as a result as follows：The breakdown voltage (AC) of the dielectric layer>
2000V, insulaion resistance (250V) ＞ 50M Ω, leakage current (250V)<2mA.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (10)
1. a kind of dielectric paste for aluminium alloy base plate thick film circuit, it is characterised in that by percentage to the quality, by with the following group
It is grouped into：Microcrystalline glass powder 60-75%, binding agent 25-40%；Wherein, the microcrystalline glass powder by percentage to the quality by with
The following group packet into：SiO220-40%, Bi2O320-30%, B2O35-15%, BaO 5-15%, CaO 5-10%, ZnO 1-
5%, Al2O31-5%, V2O51-5%, TiO25-10%, Co2O31-3%.
2. the dielectric paste according to claim 1 for aluminium alloy base plate thick film circuit, it is characterised in that the bonding
Agent is organic binder bond, and the organic binder bond is composed of the following components in parts by weight：Organic solvent 40-75 parts, macromolecule
Thickener 5-20 parts, plasticizer 1-5 parts, dispersant 1-5 parts, defoamer 1-5 parts, thixotropic agent 1-5 parts.
3. the dielectric paste according to claim 2 for aluminium alloy base plate thick film circuit, it is characterised in that the crystallite
The particle diameter of glass dust is 1-3 μm, and softening point is 350-450 DEG C, and average coefficient of linear expansion is 18 × 10-6/ DEG C~25 × 10-6/
℃。
4. the dielectric paste according to claim 3 for aluminium alloy base plate thick film circuit, it is characterised in that described organic
Solvent is turpentine oil, terpinol, hexadecanol, butyl carbitol, butyl carbitol acetate, diethylene glycol monomethyl ether, diethyl two
Alcohol butyl oxide, ethylene glycol ether acetate, ATBC, tributyl phosphate, GBL, mixed dibasic acid ester, N-
At least one of methyl pyrrolidone, DMF, DMA, dimethyl sulfoxide.
5. the dielectric paste according to claim 4 for aluminium alloy base plate thick film circuit, it is characterised in that the high score
Sub- thickener is ethyl cellulose, polyethylene glycol, polyvinyl butyral resin, polyvinyl formal acetal, polyvinyl acetate, poly-
At least one of vinylpyrrolidone, hydrogenated rosin resin, acrylate, epoxy resin, polyurethane resin.
6. the dielectric paste according to claim 5 for aluminium alloy base plate thick film circuit, it is characterised in that the plasticising
Agent be repefral, diethyl phthalate, dibutyl phthalate, in dioctyl phthalate extremely
Few one kind；The dispersant is at least one of triammonium citrate, polymethyl acid amide, 1,4- dihydroxy sulfanilic acids.
7. the dielectric paste according to claim 6 for aluminium alloy base plate thick film circuit, it is characterised in that the defoaming
Agent be organosiloxane, polyethers, polyethylene glycol, ethylene-acrylic acid copolymer, polyglyceryl fatty acid ester, dimethyl silicone polymer,
At least one of organic silicon modified by polyether；The thixotropic agent is hexadecanol, polyamide wax, rilanit special, thixotropy alkyd
At least one of resin, organobentonite, aerosil.
A kind of 8. preparation work of dielectric paste for aluminium alloy base plate thick film circuit as described in claim any one of 1-7
Skill, it is characterised in that comprise the following steps：
A, microcrystalline glass powder is prepared, by SiO2、Bi2O3、B2O3、BaO、CaO、ZnO、Al2O3、V2O5、TiO2And Co2O3Mix in proportion
Melting is glass melting thing after closing uniformly, will produce devitrified glass after the glass melting thing water quenching, crystallite glass is obtained after grinding
Glass powder；
B, binding agent is prepared, organic solvent, macromolecule thickener, plasticizer, dispersant, defoamer and thixotropic agent are mixed in proportion
Dissolved after conjunction, filter out impurity and produce organic binder bond；
C, dielectric paste is prepared, fineness is ground to after the microcrystalline glass powder and binding agent are dispersed with stirring less than 5 μm, produces Jie
Chylema material.
9. the preparation technology of the dielectric paste according to claim 8 for aluminium alloy base plate thick film circuit, its feature exist
In in the step a, smelting temperature is 1200-1400 DEG C, smelting time 2-4h；The process of lapping is specially：With distillation
Water, to devitrified glass ball milling 6-10h, produces the microcrystalline glass powder that particle diameter is 1-3 μm as medium.
10. the preparation technology of the dielectric paste according to claim 9 for aluminium alloy base plate thick film circuit, its feature exist
In in the step b, described be dissolved under 80 DEG C of water bath condition is carried out, and the viscosity of the organic binder bond is 200-
300mPa·s；The dielectric paste viscosity that the step c is obtained is 40-60Pas.
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| CN110373117A (en) * | 2019-07-01 | 2019-10-25 | 重庆财经职业学院 | A kind of embedded computer circuit board package material |
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| CN106571172A (en) * | 2016-09-27 | 2017-04-19 | 东莞珂洛赫慕电子材料科技有限公司 | Aluminum alloy substrate thick film circuit intermediate-temperature sintering dielectric paste and preparation method thereof |
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| CN110373117A (en) * | 2019-07-01 | 2019-10-25 | 重庆财经职业学院 | A kind of embedded computer circuit board package material |
| CN111003940A (en) * | 2019-12-27 | 2020-04-14 | 黄山市晶特美新材料有限公司 | Automobile rear windshield toughened glass slurry and preparation method thereof |
| CN111763013A (en) * | 2020-07-10 | 2020-10-13 | 咸阳盈和电子材料有限公司 | High-performance glass powder for stainless steel-based insulating medium coating and preparation method thereof |
| CN112011291A (en) * | 2020-08-13 | 2020-12-01 | 深圳振华富电子有限公司 | High-temperature-resistant glue and preparation method and application thereof |
| CN112225458A (en) * | 2020-08-13 | 2021-01-15 | 航天特种材料及工艺技术研究所 | High-temperature-resistant low-expansion-coefficient bonding slurry for ceramic matrix composite and preparation method thereof |
| CN112011291B (en) * | 2020-08-13 | 2022-06-24 | 深圳振华富电子有限公司 | High-temperature-resistant glue and preparation method and application thereof |
| CN112309649A (en) * | 2020-09-25 | 2021-02-02 | 南京航空航天大学 | Preparation method of glass glaze on surface of interdigital electrode |
| CN114255908A (en) * | 2022-03-01 | 2022-03-29 | 西安宏星电子浆料科技股份有限公司 | Acid and alkali resistant salt-fog-resistant medium slurry and preparation method thereof |
| CN114255908B (en) * | 2022-03-01 | 2022-05-17 | 西安宏星电子浆料科技股份有限公司 | Acid and alkali resistant salt-fog-resistant medium slurry and preparation method thereof |
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