CN104244486A - Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device - Google Patents
Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device Download PDFInfo
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Abstract
The invention discloses a Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device which is characterized in that the device comprises a substrate and serial rare earth electronic slurry, the serial rare earth electronic slurry is prepared on the substrate in the mode of a thick film circuit, the serial rare earth electronic slurry comprises coating slurry, rare earth resistance slurry, rare earth electrode slurry and rare earth medium slurry. Substrate vacuum impregnation ingredients comprise, by weight ratio, 2-7% of magnesium and 1.5-2.5% of rare earth metal neodymium and scandium together except for aluminum. The Re-alsic-rare-earth-aluminum-silicon-carbide-based LED rare earth thick film circuit electric light source device is good in compatibility, firm in combination, large in power density, high in thermal shock resistance, high in heat dissipation efficiency, environmentally friendly, capable of saving energy and safe and reliable, and good match of the device and LED chips is achieved.
Description
Technical field
The present invention relates to high power led electro light sources technical field, relate to a kind of broad-spectrum high-efficiency high-power LED electric light source assembly more specifically.
Background technology
In the strategy of sustainable development that China establishes, two importances related to are that novel energy, light source, environmental protection and raising capacity usage ratio, improve energy-structure.In LED electrical light source field, novel electric light source component requirements, power wants large, and optical efficiency wants high, and thermal shock resistance is eager to excel, and is easy to processing, environmental protection, safe and reliable.Can meet the Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric light source assembly of above-mentioned requirements, be good selection.Current this large power, electrically light source assembly is all in initial stage exploitation, operational phase both at home and abroad.
Earlier 1900s, anodization aluminium sheet is prepared thick film circuit for solar cell, LED-baseplate, for DC low-voltage, succeed.Because power is little, lumen number is low, poor, the uneasy congruent problem of hot property, insulation property, great power LED electric light source cannot be used for.Develop a kind of good manufacturability, high-power, high brightness, the LED electrical light source product for industry, household electrical appliance, war industry of high strength, high brightness, also there are the following problems at present:
1, the heat conductivility improving LED chip base plate for packaging is needed;
2, Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit series special electric slurry;
3, Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit fabricating technology is improved in raising.
Through verification, professional application is in the electric slurry of Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit system, and there is not been reported both at home and abroad.
The patent No.: the resistance slurry that CN101364454A, CN101740160A announce, dielectric paste are only suitable for integrated circuit modules, solar cell and LED aluminum base plate.
Summary of the invention
Object of the present invention be exactly deficiency in order to solve prior art and the one provided not only cost is low, the heat efficiency is high, hot property is excellent, high strength, high-power, easy-formation, be applicable to Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit baseplate material.
The present invention adopts following technical solution to realize above-mentioned purpose: a kind of Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device, it is characterized in that, it comprises substrate, serial rare-earth electric slurry, serial rare-earth electric slurry is prepared on substrate with the form of thick film circuit, and serial rare-earth electric slurry is containing packaging slurry, rare earth resistance slurry, rare earth electrode slurry, rare earth medium slurry; Except aluminium in substrate vacuum infiltration composition, by weight percentage also containing magnesium 2-7%, rare earth metal neodymium, scandium be 1.5-2.5% altogether, object improves the high-temperature behavior of Re-alsic-rare earth-aluminium silicon carbide substrate, processing performance, air-tightness and corrosion resistance, because scandium has very magical alloying action to aluminium, as long as the scandium adding some thousandths of in aluminium will generate Al
3sc cenotype, plays metamorphism to aluminium alloy, makes the stuctures and properties generation significant change of aluminium, adding 0.2%-0.4%Sc can make the recrystallization temperature of aluminium improve 150-200O DEG C, the fusing point of scandium is 1540 DEG C, and the fusing point 660 DEG C more than aluminium is high, the density (3.0g/cm of scandium
2) then with the density (2.7g/cm of aluminium
3) close; By adding Microamounts of Scandium, scandium, develop the composite ceramic-based plate material of serial Re-alsic of new generation, as high-strength and high ductility height heat conduction Re-alsic-rare earth-aluminium carborundum and structural stability, corrosion resistance all significantly improve, and the brittle phenomenon easily produced during long-term work under high temperature can be avoided, only have this high-temperature intensity and the rare earth-aluminium carbide composite ceramic substrate of voltage-resistent characteristic excellence, be just applicable to the great power LED rare earth thick film circuit light source product that special making is excellent.
Further illustrating as such scheme, multiple LED chips that the thick film circuit on described substrate is provided with positive and negative electrode contact and is arranged in series successively along thick film circuit.
Described rare earth medium slurry comprises microcrystalline glass powder, inorganic adhesive phase, organic solvent carriers, and each raw material weight proportioning is; Microcrystalline glass powder 70-85%, inorganic adhesive phase, organic solvent carriers be 30-15% altogether;
Described microcrystalline glass powder is by Si0
2, Na
20, B
20
3, K
20, Ba0, Ca0, Co
20
3, Ti0
2, P
20
5, V
20
5, Sb2
20
3, Cr
20
3and rare earth oxide composition;
Various oxide raw material weight proportion is followed successively by: 20-55%, 0-20%, 0-20%, 0-20%, 1-10%, 0-5%, 0-5%, 3-27%, 0-5%, 0-10%, 0-5%, 0-5%;
Inorganic adhesive phase, organic solvent carriers are terpinol, butyl carbitol acetate, tributyl citrate, 1.4-butyrolactone, NC Nitroncellulose, ethyl cellulose, rilanit special, lecithin; Each raw material weight proportioning is followed successively by; 0-85%, 0-85%, 0-20%, 2-20%, 0.1-5%, 0-3%, 1-6%, 0.1-5%, 0.1-5%;
Rare earth oxide is one or more of lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium, according to different capacity, different temperatures thick film circuit to the requirement of electrical property, optical property, hot property, insulation property, mechanical performance and far-infrared functional, increase according to the rare earth oxide of test mathematical model interpolation variety classes, different share or replace the one or more of above-mentioned microcrystalline glass powder, often kind of rare earth proportioning weight is: 0.05-3.5%.
Described rare earth resistance slurry is made up of microcrystalline glass powder, Fine Aluminum Powder, inorganic adhesive phase, organic solvent carriers and rare earth oxide, microcrystalline glass powder, Fine Aluminum Powder weight sum and the weight ratio of inorganic adhesive phase, organic solvent carriers are (50-75) %:(25-50) %, wherein the weight ratio of Fine Aluminum Powder and microcrystalline glass powder is: (55-80) %:(20-45) %;
The compositions in weight percentage of inorganic adhesive phase, organic solvent carriers comprises: terpinol 75-98%, tributyl citrate 0-15%, ethyl cellulose 0.5-5%, NC Nitroncellulose 0-2%, rilanit special 0.1-5%, lecithin 0.1-5%;
Rare earth oxide is; One or more of lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium; According to the thick film circuit of different capacity, different temperatures, different sheet resistance to the requirement of electric conductivity, optical property, hot property, chemical property, mechanical performance and far-infrared functional, the rare earth oxide of variety classes, different share is added according to test mathematical model, increase or replace described Fine Aluminum Powder, microcrystalline glass powder one or more, often kind of rare earth proportioning weight is: 0.05-3.5%.
Described rare earth electrode slurry is made up of solid-phase component and organic solvent carriers and rare earth oxide, and the weight sum of organic solvent carriers and rare earth oxide and the weight proportion of solid-phase component are: 10 ~ 30%: 70 ~ 90%; In solid-phase component, silver, aluminium and rare earth oxide form composite powder, are: 94 ~ 99.4%: 0.6 ~ 6% with the weight proportion of microcrystalline glass powder; In silver, aluminium, rare earth oxide composite powder, the particle diameter of aluminium powder, silver powder and rare earth oxide is less than 2 μm; The weight proportion of aluminium, silver and rare earth oxide is: 0.6 ~ 10%: 99 ~ 82%: 0.4 ~ 8%;
Devitrified glass is by P
20
5, Zn0, K
20, B
20
3, Sn0
2, Si0
2, Al
20
3, Cu0 and rare earth oxide composition, each oxide weight proportioning is followed successively by: P
20
535-55%, Zn035-50%, K
205-10%, B
20
30-10%, Sn0
20-10%, Si0
20-5%, Li
200-2%, Al
20
32-5%, Cu00-1.5%;
The compositions in weight percentage of organic solvent carriers comprises: terpinol 60 ~ 98%, tributyl citrate 10 ~ 30%, ethyl cellulose 2 ~ 10%, NC Nitroncellulose 1 ~ 5%, hydrogenated castor oil 0.1 ~ 5%, lecithin 0.1 ~ 5%;
Rare earth oxide is one or more in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium, according to the thick film circuit of different capacity, different temperatures, Different electrodes connected mode to the requirement of electric conductivity, optical property, hot property, chemical property, mechanical performance and far-infrared functional, the rare earth oxide of variety classes, different share is added according to test mathematical model, increase or to replace in above-mentioned microcrystalline glass powder and composite powder one or more, often kind of rare earth proportioning weight is: 0.05-3.5%; Owing to adding the multiple rare earth elements such as scandium, yttrium, cerium and lanthanum, the compatibility of slurry, wettability, electric conductivity, optical property, hot property, chemical property, manufacturability, adaptability have a significant improvement raising.
Described substrate is the medium thick film adopting rare earth medium slurry preparation to have insulation property; want to bear more than 2500 volts voltages when this thicknesses of layers is greater than 80 μm; rare earth resistance slurry, rare earth electrode slurry are prepared on deielectric-coating with the form of thick film circuit; finally on thick film circuit and deielectric-coating, prepare encapsulating material, work protective effects such as insulating, anticorrosion.
The preparation process of described rare earth medium slurry comprises:
1) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
2) preparation of inorganic adhesive phase, organic solvent carriers
The preparation of inorganic adhesive phase, organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment thickener, amount of diluent, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 300mPas;
3) preparation of slurry
The microcrystalline glass powder prepared, inorganic adhesive phase, organic carrier and rare earth oxide are placed in mixing and grinding machine by proportioning grind and obtain a rare earth medium slurry in, adjustment thickener, amount of diluent, by the adjustment of the viscosity of slurry in the scope of 168 ~ 289mPas.
The preparation process of described rare earth resistance slurry comprises:
1) preparation of Fine Aluminum Powder
By metallic aluminium melting, be placed in totally enclosed high speed disc atomizer, motlten metal is superheated to 250 degrees Celsius, under inert gas shielding. and cool rapidly, speed is 105 ~ 107K/S, powder by atomization; The aluminium powder of atomization is delivered to cyclone separator in portion from container, and the spray column being sent to band screen pack after first separation carries out gas solid separation, obtains the Fine Aluminum Powder that particle mean size is 3 ~ 5 μm after drying;
2) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
3) preparation of inorganic adhesive phase organic solvent carriers
The configuration of organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment thickener, amount of diluent, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 280mPas;
4) preparation of slurry
Microcrystalline glass powder good for proportioning, Fine Aluminum Powder, inorganic adhesive phase, organic carrier and rare earth oxide are placed in mixing and grinding machine to grind and obtain rare earth resistance slurry through rolling in one hour, adjustment thickener, amount of diluent, by the adjustment of the viscosity of slurry in the scope of 168 ~ 289mPas;
Adjustment microcrystalline glass powder, Fine Aluminum Powder, the composition of rare earth oxide, proportioning can obtain the serial rare-earth resistance slurry of different sheet resistance.
The preparation process of described rare earth electrode slurry comprises:
1) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
2) preparation of inorganic adhesive phase organic solvent carriers
The configuration of described organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment amount of thickener, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 280mPas;
3) preparation of rare earth electrode slurry
Good for proportioning rare earth composite powder, microcrystalline glass powder, inorganic adhesive phase organic carrier and the rare earth oxide such as silver, aluminium, yttrium being placed in mixing and grinding machine grinds one hour must through being rolled down to rare earth electrode slurry.
The preparation technology of Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device comprises:
1, the preparation of Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit substrate:
Re-alsic-rare earth-aluminium silicon carbide substrate for subsequent use, rare earth medium slurry, resistance slurry, electrode slurry are prepared rare earth thick film circuit LED electrical light source device by technological process; This technological process is:
A.alsic aluminium silicon carbide bare board vacuum infiltration-Re-alsic-rare earth-aluminium silicon carbide substrate → B. light draws version → C. steel mesh printing → D. dries sintering → E. test package;
2, LED chip is welded in the circuit of Re-alsic-rare earth-aluminium silicon carbide substrate.
The beneficial effect that the present invention adopts above-mentioned technical solution to reach is:
The present invention is by adding the rare earth elements such as Microamounts of Scandium, develop the composite ceramic-based plate material of serial Re-alsic of new generation, as high-strength and high ductility height heat conduction Re-alsic-rare earth-aluminium carborundum and structural stability, corrosion resistance all significantly improve, and the brittle phenomenon easily produced during long-term work under can avoiding high temperature, and the compatibility of the slurry of LED rare earth thick film circuit, wettability, hot property, electrical property, optical property, manufacturability, adaptability have a significant improvement raising.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Description of reference numerals: 1, substrate 2, thick film circuit 3, contact 4, LED chip installation position.
Embodiment
A kind of Re-alsic-rare earth-aluminium of the present invention silicon carbide-based LED rare earth thick film circuit electric lighting device, it comprises substrate, serial rare-earth electric slurry, serial rare-earth electric slurry is prepared on substrate with the form of thick film circuit, and serial rare-earth electric slurry is containing packaging slurry, rare earth resistance slurry, rare earth electrode slurry, rare earth medium slurry; Substrate have employed vacuum infiltration technique, wherein, except aluminium in vacuum infiltration composition, by weight percentage also containing magnesium 2-7%, rare earth metal neodymium, scandium be 1.5-2.5% altogether, object improves the high-temperature behavior of Re-alsic-rare earth-aluminium silicon carbide substrate, processing performance, air-tightness and corrosion resistance, because scandium has very magical alloying action to aluminium, as long as the scandium adding some thousandths of in aluminium will generate Al
3sc cenotype, plays metamorphism to aluminium alloy, makes the stuctures and properties generation significant change of aluminium, adding 0.2%-0.4%Sc can make the recrystallization temperature of aluminium improve 150-200O DEG C, the fusing point of scandium is 1540 DEG C, and the fusing point 660 DEG C more than aluminium is high, the density (3.0g/cm of scandium
2) then with the density (2.7g/cm of aluminium
3) close; By adding Microamounts of Scandium, scandium, develop the composite ceramic-based plate material of serial Re-alsic of new generation, as high-strength and high ductility height heat conduction Re-alsic-rare earth-aluminium carborundum and structural stability, corrosion resistance all significantly improve, and the brittle phenomenon easily produced during long-term work under high temperature can be avoided, only have this high-temperature intensity and the rare earth-aluminium carbide composite ceramic substrate of voltage-resistent characteristic excellence, be just applicable to the great power LED rare earth thick film circuit light source product that special making is excellent.
Described rare earth medium slurry comprises microcrystalline glass powder, inorganic adhesive phase, organic solvent carriers, and each raw material weight proportioning is; Microcrystalline glass powder 70-85%, inorganic adhesive phase, organic solvent carriers be 30-15% altogether; Described microcrystalline glass powder is by Si0
2, Na
20, B
20
3, K
20, Ba0, Ca0, Co
20
3, Ti0
2, P
20
5, V
20
5, Sb2
20
3, Cr
20
3and rare earth oxide composition; Various oxide raw material weight proportion is followed successively by: 20-55%, 0-20%, 0-20%, 0-20%, 1-10%, 0-5%, 0-5%, 3-27%, 0-5%, 0-10%, 0-5%, 0-5%; Inorganic adhesive phase, organic solvent carriers are terpinol, butyl carbitol acetate, tributyl citrate, 1.4-butyrolactone, NC Nitroncellulose, ethyl cellulose, rilanit special, lecithin; Each raw material weight proportioning is followed successively by; 0-85%, 0-85%, 0-20%, 2-20%, 0.1-5%, 0-3%, 1-6%, 0.1-5%, 0.1-5%; Rare earth oxide is one or more of lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium, according to different capacity, different temperatures thick film circuit to the requirement of electrical property, optical property, hot property, insulation property, mechanical performance and far-infrared functional, increase according to the rare earth oxide of test mathematical model interpolation variety classes, different share or replace the one or more of above-mentioned microcrystalline glass powder, often kind of rare earth proportioning weight is: 0.05-3.5%.
The preparation process of described rare earth medium slurry comprises:
1) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
2) preparation of inorganic adhesive phase, organic solvent carriers
The preparation of inorganic adhesive phase, organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment thickener, amount of diluent, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 300mPas;
3) preparation of slurry
The microcrystalline glass powder prepared, inorganic adhesive phase, organic carrier and rare earth oxide are placed in mixing and grinding machine by proportioning grind and obtain a rare earth medium slurry in, adjustment thickener, amount of diluent, by the adjustment of the viscosity of slurry in the scope of 168 ~ 289mPas.
Described rare earth resistance slurry is made up of microcrystalline glass powder, Fine Aluminum Powder, inorganic adhesive phase, organic solvent carriers and rare earth oxide, microcrystalline glass powder, Fine Aluminum Powder weight sum and the weight ratio of inorganic adhesive phase, organic solvent carriers are (50-75) %:(25-50) %, wherein the weight ratio of Fine Aluminum Powder and microcrystalline glass powder is: (55-80) %:(20-45) %; The compositions in weight percentage of inorganic adhesive phase, organic solvent carriers comprises: terpinol 75-98%, tributyl citrate 0-15%, ethyl cellulose 0.5-5%, NC Nitroncellulose 0-2%, rilanit special 0.1-5%, lecithin 0.1-5%; Rare earth oxide is; One or more of lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium; According to the thick film circuit of different capacity, different temperatures, different sheet resistance to the requirement of electric conductivity, optical property, hot property, chemical property, mechanical performance and far-infrared functional, the rare earth oxide of variety classes, different share is added according to test mathematical model, increase or replace described Fine Aluminum Powder, microcrystalline glass powder one or more, often kind of rare earth proportioning weight is: 0.05-3.5%.
The preparation process of described rare earth resistance slurry comprises:
1) preparation of Fine Aluminum Powder
By metallic aluminium melting, be placed in totally enclosed high speed disc atomizer, motlten metal is superheated to 250 degrees Celsius, cools rapidly under inert gas shielding, and speed is 105 ~ 107K/S, powder by atomization; The aluminium powder of atomization is delivered to cyclone separator in portion from container, and the spray column being sent to band screen pack after first separation carries out gas solid separation, obtains the Fine Aluminum Powder that particle mean size is 3 ~ 5 μm after drying;
2) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
3) preparation of inorganic adhesive phase organic solvent carriers
The configuration of organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment thickener, amount of diluent, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 280mPas;
4) preparation of slurry
Microcrystalline glass powder good for proportioning, Fine Aluminum Powder, inorganic adhesive phase, organic carrier and rare earth oxide are placed in mixing and grinding machine to grind and obtain rare earth resistance slurry through rolling in one hour, adjustment thickener, amount of diluent, by the adjustment of the viscosity of slurry in the scope of 168 ~ 289mPas;
Adjustment microcrystalline glass powder, Fine Aluminum Powder, the composition of rare earth oxide, proportioning can obtain the serial rare-earth resistance slurry of different sheet resistance.
Described rare earth electrode slurry is made up of solid-phase component and organic solvent carriers and rare earth oxide, and the weight sum of organic solvent carriers and rare earth oxide and the weight proportion of solid-phase component are: 10 ~ 30%: 70 ~ 90%; In solid-phase component, silver, aluminium and rare earth oxide form composite powder, are: 94 ~ 99.4%: 0.6 ~ 6% with the weight proportion of microcrystalline glass powder; In silver, aluminium, rare earth oxide composite powder, the particle diameter of aluminium powder, silver powder and rare earth oxide is less than 2 μm; The weight proportion of aluminium, silver and rare earth oxide is: 0.6 ~ 10%: 99 ~ 82%: 0.4 ~ 8%; Devitrified glass is by P
20
5, Zn0, K
20, B
20
3, Sn0
2, Si0
2, Al
20
3, Cu0 and rare earth oxide composition, each oxide weight proportioning is followed successively by: P
20
535-55%, Zn035-50%, K
205-10%, B
20
30-10%, Sn0
20-10%, Si0
20-5%, Li
200-2%, Al
20
32-5%, Cu00-1.5%; The compositions in weight percentage of organic solvent carriers comprises: terpinol 60 ~ 98%, tributyl citrate 10 ~ 30%, ethyl cellulose 2 ~ 10%, NC Nitroncellulose 1 ~ 5%, hydrogenated castor oil 0.1 ~ 5%, lecithin 0.1 ~ 5%; Rare earth oxide is one or more in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium, according to the thick film circuit of different capacity, different temperatures, Different electrodes connected mode to the requirement of electric conductivity, optical property, hot property, chemical property, mechanical performance and far-infrared functional, the rare earth oxide of variety classes, different share is added according to test mathematical model, increase or to replace in above-mentioned microcrystalline glass powder and composite powder one or more, often kind of rare earth proportioning weight is: 0.05-3.5%; Owing to adding the multiple rare earth elements such as scandium, yttrium, cerium and lanthanum, the compatibility of slurry, wettability, electric conductivity, optical property, hot property, chemical property, manufacturability, adaptability have a significant improvement raising.
Described substrate is the medium thick film adopting rare earth medium slurry preparation to have insulation property; want to bear more than 2500 volts voltages when this thicknesses of layers is greater than 80 μm; rare earth resistance slurry, rare earth electrode slurry are prepared on deielectric-coating with the form of thick film circuit; finally on thick film circuit and deielectric-coating, prepare encapsulating material, work protective effects such as insulating, anticorrosion.
The preparation process of described rare earth electrode slurry comprises:
1) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
2) preparation of inorganic adhesive phase organic solvent carriers
The configuration of described organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment amount of thickener, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 280mPas;
3) preparation of rare earth electrode slurry
Good for proportioning rare earth composite powder, microcrystalline glass powder, inorganic adhesive phase organic carrier and the rare earth oxide such as silver, aluminium, yttrium being placed in mixing and grinding machine grinds one hour must through being rolled down to rare earth electrode slurry.
The preparation technology of Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device comprises:
1, the preparation of Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit substrate:
Re-alsic-rare earth-aluminium silicon carbide substrate for subsequent use, rare earth medium slurry, resistance slurry, electrode slurry are prepared rare earth thick film circuit LED electrical light source device by technological process; This technological process is:
A.alsic aluminium silicon carbide bare board vacuum infiltration-Re-alsic-rare earth-aluminium silicon carbide substrate → B. light draws version → C. steel mesh printing → D. dries sintering → E. test package;
2, LED chip is welded in the circuit of Re-alsic-rare earth-aluminium silicon carbide substrate.
Below in conjunction with specific embodiment, specific embodiment of the invention scheme is described in further detail.
Choose 40*40*1.5mm specification Re-alsic-rare earth-aluminium silicon carbide substrate by technical requirement, 5WLED chip 5 (5W*5=25W) can be encapsulated.
As shown in Figure 1, Re-alsic-rare earth-aluminium silicon carbide substrate 1 arranges thick film circuit 2, multiple LED chip installation positions 4 that thick film circuit 2 is provided with positive and negative electrode contact 3 and is arranged in series successively along thick film circuit.
Re-alsic-rare earth-aluminium silicon carbide substrate is for subsequent use after treatment, the serial rare-earth electric slurry modulated is contained packaging slurry, rare earth resistance slurry, rare earth electrode slurry, rare earth medium slurry, by the version of following technique and Fig. 1, preparation Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device:
Technological process:
A.alsic-aluminium silicon carbide bare board vacuum infiltration-Re-alsic-rare earth-aluminium silicon carbide substrate → B. light draws version → C. steel mesh printing → D. dries sintering → E. test package
The thickness of dielectric layers > of a.Re-alsic-rare earth-aluminium silicon carbide substrate 60 μm, b. sheet resistance film thickness > 8 μm;
B. sintering process: a. heating-cooling speed 50-70 DEG C/min, b. peak temperature: 500-700 DEG C.
Note: slurry was placed for a long time, needs before using to carry out homogenized.
After tested, Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit device reaches following designing requirement.
The Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit performance parameter of the embodiment of the present invention:
Heat conduction rate: 180 W/m.K (25 DEG C) heat conduction rate: 150 DEG C/sec
The present embodiment Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electrical property:
1. electrical property:
| Sheet resistance | Resolution | TCR/ppm/℃ | Aging intensity |
| 50±2mΩ/□ | 0.1mm | 500±150ppm×10 -6/℃ | ＞10(N/mm 2) |
2. physical property
| Rheological behavior | Resistive layer thickness | Slurry viscosity | Unit dose |
| Thixotroping should wire mark | 10±2μm | 168±20Pas/10RPM | 86cm 2/ gram |
The performance of the present embodiment rare earth medium slurry:
Rare earth medium slurry thicknesses of layers is: >=65 μm;
1. physical property:
| Color (choosing) | Solids content | Silk screen number | Slurry viscosity | Sintering temperature |
| Blue (grey, black) look | 78％ | 190 | 125PaS/RPM | 550℃ |
2. electric property:
| Leakage current | Insulation resistance | Breakdown strength |
| ＜5mA(250VDC) | ＞50MΩ(500VDC) | ＞1500VAC |
The present embodiment rare earth electrode slurry performance:
1. electrical property:
| Sheet resistance | Resolution | Tensile strength | Aging intensity |
| ＜3±2mΩ/□ | 0.1mm | ＞16(N/mm 2) | 10(N/mm 2) |
2. physical property
| rheological behavior | electrode layers thickness | slurry viscosity | unit dose |
| thixotroping should wire mark | 12 ± 2 μm | 186PaS/RPM. | 88cm 2/ gram |
The present embodiment Re-alsic-rare earth-aluminium carborundum LED-baseplate performance
| Thermal conductivity | ＞200 | W/m.K(25℃)GB?11108-89 |
| Density | ＞3.00 | g/cm 2(LF)GB?3850-83 |
| Thermal coefficient of expansion | 6.5-9.5x10-6/K | ppm/℃(25-150℃)GB/T?4339-1999 |
| Bending strength | ＞300 | MPa |
| Modulus of elasticity | ＞200 | GPa |
| Resistivity | 30 | μΩ·㎝GB?5167-85 |
Note: Re-alsic-rare earth-aluminium carborundum LED baseplate material there is no national standard, performance parameter measures by relevant national standard:
Thermal conductivity: with reference to GB 11108-89, thermal conductivity by thermal enlargement rate, density and specific heat radix by drawing;
Thermal coefficient of expansion: with reference to GB/T 4339-1999 " mensuration of metal material thermal expansion characteristics parameter ";
Resistivity: measure with reference to GB 5167-85 GB;
Density: measure with reference to GB 3850-83 GB.
The above is only one of the preferred embodiments of the present invention, adjust function phase constituent of the present invention, content and preparation technology, Re-alsic-rare earth-aluminium carborundum LED rare earth rear mold circuit family electric slurry, dielectric paste, resistance slurry, electrode slurry can be compatible with various metals, non-metal base plate dielectric paste.Such as: aluminum oxide substrate (Al2O3), aluminium nitride (AIN) substrate, composite ceramic substrate, crystallite glass substrate, copper alloy substrate, aluminium alloy base plate, titanium alloy substrate etc.
It is emphasized that Re-alsic-rare earth-aluminium of the present invention silicon carbide-based LED rare earth thick film circuit technology of preparing parameter is through design modifying, be not only applicable to the present invention, be also applicable to prepare the high-power rare earth thick film circuit electric heating element in electric heating field, Intelligent electric-heating chip.
Re-alsic rare earth-aluminium of the present invention silicon carbide-based great power LED rare earth thick film circuit electric lighting device, it is a kind of easy fired, high-efficiency heat conduction compound micro-crystalline ceramic material (conductive coefficient >=150w/mk), applies this composite ceramic material exploitation LED chip and PTCR-xthm chip substrate and light source base.Wherein this composite ceramic material can make high-power LED chip substrate and light source base, and high thermally conductive LED composite ceramic substrate key technology and LED chip are directly installed on substrate.The technical problems such as the Re-alsic substrate heat coefficient of expansion can realize good mating with LED chip, the lattice displacement stoping thermal failure to produce.When the substrate temperature of composite ceramics reaches nearly 180 degree, the reduced rate of lumen number (brightness) is also only 3-5%.
Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, and without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (10)
1. a Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device, it is characterized in that, it comprises substrate, serial rare-earth electric slurry, serial rare-earth electric slurry is prepared on substrate with the form of thick film circuit, and serial rare-earth electric slurry is containing packaging slurry, rare earth resistance slurry, rare earth electrode slurry, rare earth medium slurry; Except aluminium in substrate vacuum infiltration composition, by weight percentage also containing magnesium 2-7%, rare earth metal neodymium, scandium be 1.5-2.5% altogether.
2. Re-alsic-rare earth-aluminium according to claim 1 silicon carbide-based LED rare earth thick film circuit electric lighting device, is characterized in that, multiple LED chips that the thick film circuit on described substrate is provided with positive and negative electrode contact and is arranged in series successively along thick film circuit.
3. Re-alsic-rare earth-aluminium according to claim 1 silicon carbide-based LED rare earth thick film circuit electric lighting device, is characterized in that, described rare earth medium slurry comprises microcrystalline glass powder, inorganic adhesive phase, organic solvent carriers, and each raw material weight proportioning is; Microcrystalline glass powder 70-85%, inorganic adhesive phase, organic solvent carriers be 30-15% altogether;
Described microcrystalline glass powder is by Si0
2, Na
20, B
20
3, K
20, Ba0, Ca0, Co
20
3, Ti0
2, P
20
5, V
20
5, Sb2
20
3, Cr
20
3and rare earth oxide composition;
Various oxide raw material weight proportion is followed successively by: 20-55%, 0-20%, 0-20%, 0-20%, 1-10%, 0-5%, 0-5%, 3-27%, 0-5%, 0-10%, 0-5%, 0-5%;
Inorganic adhesive phase, organic solvent carriers are terpinol, butyl carbitol acetate, tributyl citrate, 1.4-butyrolactone, NC Nitroncellulose, ethyl cellulose, rilanit special, lecithin; Each raw material weight proportioning is followed successively by; 0-85%, 0-85%, 0-20%, 2-20%, 0.1-5%, 0-3%, 1-6%, 0.1-5%, 0.1-5%;
Rare earth oxide is one or more of lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium.
4. Re-alsic-rare earth-aluminium according to claim 1 silicon carbide-based LED rare earth thick film circuit electric lighting device, it is characterized in that, described rare earth resistance slurry is made up of microcrystalline glass powder, Fine Aluminum Powder, inorganic adhesive phase, organic solvent carriers and rare earth oxide, microcrystalline glass powder, Fine Aluminum Powder weight sum and the weight ratio of inorganic adhesive phase, organic solvent carriers are (50-75) %:(25-50) %, wherein the weight ratio of Fine Aluminum Powder and microcrystalline glass powder is: (55-80) %:(20-45) %;
The compositions in weight percentage of inorganic adhesive phase, organic solvent carriers comprises: terpinol 75-98%, tributyl citrate 0-15%, ethyl cellulose 0.5-5%, NC Nitroncellulose 0-2%, rilanit special 0.1-5%, lecithin 0.1-5%;
Rare earth oxide is; One or more of lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium.
5. Re-alsic-rare earth-aluminium according to claim 1 silicon carbide-based LED rare earth thick film circuit electric lighting device, it is characterized in that, described rare earth electrode slurry is made up of solid-phase component and organic solvent carriers and rare earth oxide, and the weight sum of organic solvent carriers and rare earth oxide and the weight proportion of solid-phase component are: 10 ~ 30%: 70 ~ 90%; In solid-phase component, silver, aluminium and rare earth oxide form composite powder, are: 94 ~ 99.4%: 0.6 ~ 6% with the weight proportion of microcrystalline glass powder; In silver, aluminium, rare earth oxide composite powder, the particle diameter of aluminium powder, silver powder and rare earth oxide is less than 2 μm; The weight proportion of aluminium, silver and rare earth oxide is: 0.6 ~ 10%: 99 ~ 82%: 0.4 ~ 8%;
Devitrified glass is by P
20
5, Zn0, K
20, B
20
3, Sn0
2, Si0
2, Al
20
3, Cu0 and rare earth oxide composition, each oxide weight proportioning is followed successively by: P
20
535-55%, Zn035-50%, K
205-10%, B
20
30-10%, Sn0
20-10%, Si0
20-5%, Li
200-2%, Al
20
32-5%, Cu00-1.5%;
The compositions in weight percentage of organic solvent carriers comprises: terpinol 60 ~ 98%, tributyl citrate 10 ~ 30%, ethyl cellulose 2 ~ 10%, NC Nitroncellulose 1 ~ 5%, hydrogenated castor oil 0.1 ~ 5%, lecithin 0.1 ~ 5%;
Rare earth oxide is one or more in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium.
6. the Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device according to claim 3 or 4 or 5, it is characterized in that, it is one or more that rare earth oxide replaces in described devitrified glass composition, and often kind of rare earth proportioning weight is: 0.05-3.5%.
7. the Re-alsic-rare earth-aluminium silicon carbide-based LED rare earth thick film circuit electric lighting device as described in claim 1-6 any one, it is characterized in that, it adopts rare earth medium slurry on substrate, prepare the medium thick film with insulation property, then be prepared on deielectric-coating at rare earth resistance slurry, rare earth electrode slurry with the form of thick film circuit, finally on thick film circuit and deielectric-coating, prepare encapsulating material.
8. Re-alsic-rare earth-aluminium according to claim 7 silicon carbide-based LED rare earth thick film circuit electric lighting device, it is characterized in that, the preparation process of described rare earth medium slurry comprises:
1) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
2) preparation of inorganic adhesive phase, organic solvent carriers
The preparation of inorganic adhesive phase, organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment thickener, amount of diluent, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 300mPas;
3) preparation of slurry
The microcrystalline glass powder prepared, inorganic adhesive phase, organic carrier and rare earth oxide are placed in mixing and grinding machine by proportioning grind and obtain a rare earth medium slurry in, adjustment thickener, amount of diluent, by the adjustment of the viscosity of slurry in the scope of 168 ~ 289mPas.
9. Re-alsic-rare earth-aluminium according to claim 7 silicon carbide-based LED rare earth thick film circuit electric lighting device, is characterized in that, the preparation process of described rare earth resistance slurry comprises:
1) preparation of Fine Aluminum Powder
By metallic aluminium melting, be placed in totally enclosed high speed disc atomizer, motlten metal is superheated to 250 degrees Celsius, under inert gas shielding. and cool rapidly, speed is 105 ~ 107K/S, powder by atomization; The aluminium powder of atomization is delivered to cyclone separator in portion from container, and the spray column being sent to band screen pack after first separation carries out gas solid separation, obtains the Fine Aluminum Powder that particle mean size is 3 ~ 5 μm after drying;
2) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
3) preparation of inorganic adhesive phase organic solvent carriers
The configuration of organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment thickener, amount of diluent, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 280mPas;
4) preparation of slurry
Microcrystalline glass powder good for proportioning, Fine Aluminum Powder, inorganic adhesive phase, organic carrier and rare earth oxide are placed in mixing and grinding machine to grind and obtain rare earth resistance slurry through rolling in one hour, adjustment thickener, amount of diluent, by the adjustment of the viscosity of slurry in the scope of 168 ~ 289mPas;
Adjustment microcrystalline glass powder, Fine Aluminum Powder, the composition of rare earth oxide, proportioning can obtain the serial rare-earth resistance slurry of different sheet resistance.
10. Re-alsic-rare earth-aluminium according to claim 7 silicon carbide-based LED rare earth thick film circuit electric lighting device, it is characterized in that, the preparation process of described rare earth electrode slurry comprises:
1) preparation of microcrystalline glass powder
Microcrystalline glass powder good for proportioning is mixed in batch mixer and is placed on melting in clock hood type furnace; Smelting temperature is 800 ~ 1200 degrees Celsius, peak value insulation 1 ~ 5 hour, and shrend obtains glass dregs; Glass dregs is obtained as planet-shaped grinding in ball grinder the glass micro mist that particle mean size is not more than 5 microns for 2 ~ 4 hours;
2) preparation of inorganic adhesive phase organic solvent carriers
The configuration of described organic solvent carriers is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carriers are dissolved a few hours by a certain percentage in the water of 80 ~ 100 DEG C, adjustment amount of thickener, by the adjustment of the viscosity of organic solvent carriers in the scope of 150 ~ 280mPas;
3) preparation of rare earth electrode slurry
Good for proportioning rare earth composite powder, microcrystalline glass powder, inorganic adhesive phase organic carrier and the rare earth oxide such as silver, aluminium, yttrium being placed in mixing and grinding machine grinds one hour must through being rolled down to rare earth electrode slurry.
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| CN104320866A (en) * | 2014-09-19 | 2015-01-28 | 王晨 | Composite-material-based thick-film circuit rare earth electrode slurry and preparation process thereof |
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| CN104320866A (en) * | 2014-09-19 | 2015-01-28 | 王晨 | Composite-material-based thick-film circuit rare earth electrode slurry and preparation process thereof |
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| CN104987079A (en) * | 2015-07-08 | 2015-10-21 | 长沙鼎成新材料科技有限公司 | Titanium nitride ceramic substrate for LED |
| CN105039820A (en) * | 2015-07-29 | 2015-11-11 | 长沙鼎成新材料科技有限公司 | Aluminum-silicon carbide ceramic substrate for LED |
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| CN106987836B (en) * | 2017-02-20 | 2019-10-15 | 深圳市光器新能源有限公司 | Aluminium silicon carbide heat sink substrate and preparation method thereof |
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Application publication date: 20141224 |