EP1993109B1 - Surge absorbing material with a further electrical function - Google Patents
Surge absorbing material with a further electrical function Download PDFInfo
- Publication number
- EP1993109B1 EP1993109B1 EP20070108466 EP07108466A EP1993109B1 EP 1993109 B1 EP1993109 B1 EP 1993109B1 EP 20070108466 EP20070108466 EP 20070108466 EP 07108466 A EP07108466 A EP 07108466A EP 1993109 B1 EP1993109 B1 EP 1993109B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- absorbing material
- glass
- surge absorbing
- conductive
- state component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
- 239000011358 absorbing material Substances 0.000 title claims description 33
- 239000002245 particle Substances 0.000 claims description 45
- 239000011521 glass Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 239000006096 absorbing agent Substances 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910002113 barium titanate Inorganic materials 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910002971 CaTiO3 Inorganic materials 0.000 claims description 2
- 229910020630 Co Ni Inorganic materials 0.000 claims description 2
- 229910002440 Co–Ni Inorganic materials 0.000 claims description 2
- 229910017518 Cu Zn Inorganic materials 0.000 claims description 2
- 229910017752 Cu-Zn Inorganic materials 0.000 claims description 2
- 229910017943 Cu—Zn Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910018651 Mn—Ni Inorganic materials 0.000 claims description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 claims description 2
- 229910008310 Si—Ge Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000005354 aluminosilicate glass Substances 0.000 claims description 2
- 239000005385 borate glass Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- 239000005365 phosphate glass Substances 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
Definitions
- the present invention relates to a surge absorbing material.
- surge absorbers or called varistors
- surge absorbers with good surge absorbing capability are widely used as components for providing protection against electrical overstress or surge of electronic components, electronic circuits or electronic equipment.
- inductance and capacitance are combined as a single SMD-type (surface mounting device) component to become an inductance-capacitance filter (LC filter) with filtering function; or, resistance and capacitance are combined as a single SMD-type component to become a resistance-capacitance filter (RC filter) with filtering function.
- LC filter inductance-capacitance filter
- RC filter resistance-capacitance filter
- WO 9821731 A1 discloses a low-temperature glass disposed between a surge absorber and a ceramic condenser to enhance the connection of the two materials.
- China Patent No. 1,858,995 discloses a varistor layer mainly composed of Zinc oxide with different additional elements to provide the material with functions of surge absorber and inductor, and then the two layers are combined by a laminating process and sintered together.
- KR 20020028279 shows a varistor-capacity multifunctional device based on SrCaTiO 3 .
- insulating layers with varying contents are disposed between two components.
- the present invention aims at providing a surge absorbing material for chip absorbers that has an extended range of functions and can be manufactured easily.
- the present invention provides a surge absorbing material with dual functions.
- a first-order, second-order or third-order dispersing method conductive or semiconductive particles of micron, submicron and nanometer size are wrapped in a suitable material of a glass phase, and then sintered to have good surge absorbing characteristic.
- the material of a glass phase is selected from materials with one of the characteristics among capacitance, inductance, voltage suppressor and thermistor
- the surge absorbing material becomes a material with dual functions having one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, and the problem of separation and ineffectiveness occurred when two materials of different characteristics are sintered together into a single structure can be solved.
- the microcosmic compositions of a surge absorbing material 10 of the present invention include a high electrical resistance glass substrate 11 and micron conductive or semiconductive particles 12, submicron conductive or semiconductive particles 14 and nanometer conductive or semiconductive particles 16 uniformly distributed in the glass substrate 11.
- micron conductive or semiconductive particles 12 is larger than 0.1 ⁇ m
- the particle diameter of submicron conductive or semiconductive particles 14 is between 0.1 to 0.01 ⁇ m
- the nanometer particle diameter of conductive or semiconductive particles 16 is smaller than 0.01 ⁇ m.
- the conductive particle is selected from one or more of Pt, Pd, W, Au, Al, Ag, Ni, Cu, Fe and alloy thereof.
- the semiconductive particle is selected from one of ZnO, TiO 2 , SnO 2 , Si, Ge, SiC, Si-Ge alloy, InSb, GaAs, InP, GaP, ZnS, ZnSe, ZnTe, SrTiO 3 and BaTiO 3 .
- second-order dispersed submicron conductive or semiconductive particles 14 are uniformly distributed in first-order dispersed micron conductive or semiconductive particles 12; as shown in Fig. 3 , third-order dispersed nanometer conductive or semiconductive particles 16 are uniformly distributed in second-order dispersed submicron conductive or semiconductive particles 14.
- the microcosmic compositions of a surge absorbing material 10 include three kinds of low-resistance conductive or semiconductive particles 12, 14 and 16 with different particle diameters uniformly dispersed in the glass substrate 11, and such compositions provide the surge absorbing material 10 with the characteristic of surge absorber.
- the laminated chip surge absorber 20 is endurable to heat generated from electrostatic shocks and surge overstresses.
- second-order dispersed submicron conductive or semiconductive particles 14 and third-order dispersed nanometer conductive or semiconductive particles 16 are further contained in the ceramic layer 21, and the particle distances of nanometer conductive or semiconductive particles 16 are so small that a tunnel effect occurs when an abnormal electrical overstress is applied.
- laminated chip surge absorber 20 has good electrical overstress suppressing capability and electrostatic shock resistance, as well as a good lifespan.
- the surge absorbing material 10 has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic by choosing the glass substrate 11 from one of a capacitance glass state component, an inductance glass state component, a voltage suppressor glass state component and a thermistor glass state component.
- the surge absorbing material 10 is a material with dual functions.
- the surge absorbing material 10 of the present invention has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic.
- capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic.
Description
- The present invention relates to a surge absorbing material.
- Surge or electrical overstress produced by a lightning strike, switching operation or damage of other component may disturb or damage electronic components or other sensitive electric equipment. Therefore, surge absorbers (or called varistors) with good surge absorbing capability are widely used as components for providing protection against electrical overstress or surge of electronic components, electronic circuits or electronic equipment.
- Moreover, it is a popular trend to combine two components of different functions as a single structure by a laminating process. For example, inductance and capacitance are combined as a single SMD-type (surface mounting device) component to become an inductance-capacitance filter (LC filter) with filtering function; or, resistance and capacitance are combined as a single SMD-type component to become a resistance-capacitance filter (RC filter) with filtering function.
- However, when two components of different functions are combined as a single structure by a laminating process, a residual stress is easily occurred between the two components because sintering temperatures and shrinkage rates of the two components are different, and then there are problems of separation and ineffectiveness occurred after the two components of different functions are sintered together into a single structure.
- For solving the problems mentioned above,
WO 9821731 A1 1,858,995 discloses a varistor layer mainly composed of Zinc oxide with different additional elements to provide the material with functions of surge absorber and inductor, and then the two layers are combined by a laminating process and sintered together.KR 20020028279 - In addition, in some researches, for improving the problem of bad electrical characteristics due to mutual diffusivity during the sintering process of two materials, insulating layers with varying contents are disposed between two components.
- However, although the methods mentioned above can produce components of multiple functions, the processes are relatively complicated. For instance, glass or an insulating layer with varying contents needs to be added into two materials of components to provide the components with electrical characteristics. Moreover, in such processes, two components requiring different sintering atmospheres cannot be sintered together, and thus the product cannot have good electrical characteristics.
- The present invention aims at providing a surge absorbing material for chip absorbers that has an extended range of functions and can be manufactured easily.
- This technical problem is solved by a surge absorbing material according to the independent claim.
- The present invention provides a surge absorbing material with dual functions. By a first-order, second-order or third-order dispersing method, conductive or semiconductive particles of micron, submicron and nanometer size are wrapped in a suitable material of a glass phase, and then sintered to have good surge absorbing characteristic. Furthermore, when the material of a glass phase is selected from materials with one of the characteristics among capacitance, inductance, voltage suppressor and thermistor, the surge absorbing material becomes a material with dual functions having one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic, and the problem of separation and ineffectiveness occurred when two materials of different characteristics are sintered together into a single structure can be solved.
- When such surge absorbing material of the present invention is used in producing laminated components, the problem of cofiring different materials as a single structure is not necessarily considered any more and the laminating process is relatively simple and easy.
-
-
Fig. 1 is a schematic view showing microcosmic compositions of a surge absorbing material according to one preferred embodiment of the present invention. -
Fig. 2 is an enlarged view of the A area inFig. 1 . -
Fig. 3 is an enlarged view of the B area inFig. 2 . -
Fig. 4 is a schematic view showing a laminated chip surge absorber. - As shown from
Fig. 1 to Fig. 3 , the microcosmic compositions of asurge absorbing material 10 of the present invention include a high electricalresistance glass substrate 11 and micron conductive orsemiconductive particles 12, submicron conductive orsemiconductive particles 14 and nanometer conductive orsemiconductive particles 16 uniformly distributed in theglass substrate 11. - The particle diameter of micron conductive or
semiconductive particles 12 is larger than 0.1 µm, the particle diameter of submicron conductive orsemiconductive particles 14 is between 0.1 to 0.01 µm, and the nanometer particle diameter of conductive orsemiconductive particles 16 is smaller than 0.01 µm. - The conductive particle is selected from one or more of Pt, Pd, W, Au, Al, Ag, Ni, Cu, Fe and alloy thereof.
- The semiconductive particle is selected from one of ZnO, TiO2, SnO2, Si, Ge, SiC, Si-Ge alloy, InSb, GaAs, InP, GaP, ZnS, ZnSe, ZnTe, SrTiO3 and BaTiO3.
- As shown in
Fig. 1 , thesurge absorbing material 10 of the present invention includesglass substrate 11 of 3∼60 wt% and micron conductive orsemiconductive particles 12 with particle diameter more than 0.1 µm of 40∼97 wt%, based on the total weight of thesurge absorbing material 10. - In addition, as shown in
Fig. 2 , in the microcosmic compositions of thesurge absorbing material 10, second-order dispersed submicron conductive orsemiconductive particles 14 are uniformly distributed in first-order dispersed micron conductive orsemiconductive particles 12; as shown inFig. 3 , third-order dispersed nanometer conductive orsemiconductive particles 16 are uniformly distributed in second-order dispersed submicron conductive orsemiconductive particles 14. - Therefore, the microcosmic compositions of a
surge absorbing material 10 include three kinds of low-resistance conductive orsemiconductive particles glass substrate 11, and such compositions provide thesurge absorbing material 10 with the characteristic of surge absorber. - As shown in
Fig. 4 , when aceramic layer 21 of a laminated chip surge absorber 20 is made by thesurge absorbing material 10 according to the present invention, because theceramic layer 21 is made of heat-resisting glass material and there are micron conductive orsemiconductive particles 12 and submicron conductive orsemiconductive particles 14 distributed in the microcosmic compositions of theceramic layer 21, the laminated chip surge absorber 20 is endurable to heat generated from electrostatic shocks and surge overstresses. - Most of all, second-order dispersed submicron conductive or
semiconductive particles 14 and third-order dispersed nanometer conductive orsemiconductive particles 16 are further contained in theceramic layer 21, and the particle distances of nanometer conductive orsemiconductive particles 16 are so small that a tunnel effect occurs when an abnormal electrical overstress is applied. Thus, laminated chip surge absorber 20 has good electrical overstress suppressing capability and electrostatic shock resistance, as well as a good lifespan. - In sum, the
surge absorbing material 10 has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic by choosing theglass substrate 11 from one of a capacitance glass state component, an inductance glass state component, a voltage suppressor glass state component and a thermistor glass state component. In other words, thesurge absorbing material 10 is a material with dual functions. - A method for producing the
surge absorbing material 10 according to the preferred embodiment of the present invention includes following steps: - (1) Selecting suitable glass phase compositions to provide the
glass substrate 11 of thesurge absorbing material 10 with one of the characteristics among capacitance, inductance, voltage suppressor and thermistor, and using a sol-gel process to produce a solution of the glass phase composition.
When theglass substrate 11 is the capacitance glass state composition, theglass substrate 11 can be selected from silicate glass, aluminosilicate glass, borate glass and phosphate glass with general capacitance characteristics and BaTiO3, SrTiO3, CaTiO3 and TiO2 with high dielectric constants.
When theglass substrate 11 is the inductance glass state composition, theglass substrate 11 can be selected from a series of Ni-Zn or Ni-Cu-Zn inductance material of general inductance characteristics, or a LTCC material with high frequency inductance characteristics.
When theglass substrate 11 is the voltage suppressor glass state composition, theglass substrate 11 can be an electrical overstress suppressing material such as BaTiO3, PZT and PLZT.
When theglass substrate 11 is the thermistor glass state composition, theglass substrate 11 can be a thermistor material with general thermistor characteristics such as a Mn-Ni or Mn-Co-Ni system with NTC characteristic or a V-P-Fe system with CTR characteristic. - (2) Dispersing metal or semiconductive particles of nanometer size uniformly into the glass solution in step (1).
The nanometer particles have particle diameters smaller than 0.01 µm, and can be metal conductive particles comprising Pt, Pd, Au, Ag, Ni, Cu and so on, or semiconductive particles comprising SiC, ZnO, TiO2, SnO2, SrTiO3, BaTiO3 and so on. - (3) Dispersing conductive or semiconductive particles of submicron size uniformly into the solution having metal or semiconductive particles of nanometer dispersed therein in step (2).
- (4) Dispersing conductive or semiconductive particles of micron size uniformly into the solution having submicron and nanometer metal or semiconductive particles dispersed therein in step (3).
- (5) Dying and calcining the solution after step (4) at a suitable temperature (lower than 1000°C) and then milling it into a composite material to become the
surge absorbing material 10 according to the preferred embodiment of the present invention. - The
surge absorbing material 10 of the present invention has one of the characteristics among capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic. Thus, when producing various components from thesurge absorbing material 10, which characteristic between capacitance, inductance, voltage suppressor and thermistor in addition to surge absorbing characteristic is to be provided on the component should be considered. - For instance, when the
surge absorbing material 10 is a material having inductance characteristic in addition to surge absorbing characteristic, thesurge absorbing material 10 may be produced as a surge absorber or a filtering component with both electromagnetic wave disturbance (EMI) preventing capability and electrostatic discharge (ESD) preventing capability. Moreover, the material of such filtering component has good surge and electrostatic absorbing capability, and the material retains original characteristics after multiple times of surge and electrostatic shocks.
Claims (7)
- A surge absorbing material provided with one of the characteristics among a capacitance, an inductance, a voltage suppressor and a thermistor as well as a characteristic of a surge absorber, characterized in that it comprises a high electrical resistance glass substrate (11) from about 3% to about 60% by weight of the surge absorbing material; one kind of micron conductive or semiconductive particles (12) having a particle diameter larger than 0.1 µm in an amount from about 40% to about 97% by weight of the surge absorbing material, and uniformly distributed in the glass substrate, a second kind of submicron conductive or semiconductive particles (14) having a particle diameter between 0.1 to 0.01 µm and distributed in the glass substrate and in between the micron conductive or semiconductive particles; and a third kind of nanometer conductive or semiconductive particles (16) having a particle diameter smaller than 0.01 µm and distributed in the glass substrate and in between the submicron conductive or semiconductive particles, and wherein the glass substrate is selected from the group consisting of a capacitance glass state component, an inductance glass state component, a voltage suppressor glass state component and a thermistor glass state component.
- The surge absorbing material as defined in claim 1, wherein the capacitance glass state component comprises silicate glass, aluminosilicate glass, borate glass and phosphate glass with capacitance characteristics and BaTiO3, SrTiO3, CaTiO3 and TiO2.
- The surge absorbing material as defined in claim 1, wherein the inductance glass state component comprises a series of Ni-Zn, Ni-Cu-Zn inductance material of inductance characteristics, and a LTCC material.
- The surge absorbing material as defined in claim 1, wherein the voltage suppressor glass state component comprises BaTiO3, PZT and PLZT with electrical overstress suppressing characteristics.
- The surge absorbing material as defined in claim 1, wherein the thermistor glass state component comprises a Mn-Ni, a Mn-Co-Ni system with NTC characteristic and a V-P-Fe system with CTR characteristic.
- The surge absorbing material as defined in claim 1, wherein the conductive particle is selected from the group consisting of one or more of Pt, Pd, W, Au, Al, Ag, Ni, Cu and alloy thereof
- The surge absorbing material as defined in claim 1, wherein the semiconductive particle is selected from the group consisting of one or more of ZnO, TiO2, Sn02, Si, Ge, SiC, Si-Ge alloy, InSb, GaAs, InP, GaP, ZnS, ZnSe, ZnTe, SrTiO3 and BaTiO3.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20070108466 EP1993109B1 (en) | 2007-05-18 | 2007-05-18 | Surge absorbing material with a further electrical function |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20070108466 EP1993109B1 (en) | 2007-05-18 | 2007-05-18 | Surge absorbing material with a further electrical function |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1993109A1 EP1993109A1 (en) | 2008-11-19 |
EP1993109B1 true EP1993109B1 (en) | 2014-06-04 |
Family
ID=38632903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP20070108466 Not-in-force EP1993109B1 (en) | 2007-05-18 | 2007-05-18 | Surge absorbing material with a further electrical function |
Country Status (1)
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EP (1) | EP1993109B1 (en) |
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CN103971866B (en) * | 2014-05-20 | 2017-04-12 | 立昌先进科技股份有限公司 | Rheostat with filtration structure |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US4726991A (en) * | 1986-07-10 | 1988-02-23 | Eos Technologies Inc. | Electrical overstress protection material and process |
KR100371056B1 (en) * | 2000-10-09 | 2003-02-06 | 한국과학기술연구원 | Fabrication method of SrTiO3 SMD-type varistor-capacitor multifunctional device |
EP1585146B1 (en) * | 2004-04-06 | 2008-08-06 | Abb Research Ltd. | Nonlinear electrical material for high and medium voltage applications |
-
2007
- 2007-05-18 EP EP20070108466 patent/EP1993109B1/en not_active Not-in-force
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