478229 A7 B7 五、發明說明（1 ) 【發明領域】 本發明係關於從雷等之電湧或雜訊保護電子電路或通 訊機器等之晶片型電湧吸收器及其製造方法者。 本發明係依據對於日本國之申請專利（日本專利特願 平 11 — 155464 號、特願平 11 — 210499 號 、特願平1 1 — 2 1 0 5 0 0號、特願平1 1 -34 1 476號、特 願 2000 — 199651 號、特願 2000-2 3 2208 號）者， 該曰語申請書之記載內容係採用爲本說明書之一部分。 【背景技術】 從電路內外從作用於電路之電湧或雜訊保護電子迴路 或通訊器之目的，從以往就開發有種種電湧吸收器，並且 ，有效地被利用。電湧吸收器，係電話機、數據器等電子 機器與通訊線連接之部分、或C R T驅動電路等容易受到 雷電湧或靜電等異常電壓引起之電擊電路或並聯地設於機 器，在發生電湧時洩放電湧來保護電路，或設於接地電路 同樣洩放來保護電路者。 經濟部智慧財產局員工消費合作社印製 其中，尤其，第1 3圖所示種類之電湧吸收器1 4 0 ，係電湧應答性爲良好，並且，因優於壽命特性被廣泛使 用。 此電湧吸收器，係在圓柱型絕緣子1 4 1表面裝設， 在中間部形成有放電間隙1 4 2 A之導電性膜皮1 4 2所 成之吸收器元件兩端，覆蓋附設散熱導線（slug lead ) 145之帽蓋電極143，連同放電氣體以玻璃管146 -4- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 附件1 第89125381號專利申請案 中文說明書修正頁 A7 民國91年1月修正 B7 " 五、發明説明（2) 密封者。 經濟部智慧財產局員工消費合作社印製 說明此電湧吸收器1 4 0之動作原理時，當電路以平 常狀態動作時，在導電性膜皮1 4 2中間部具有放電間隙 1 4 2 A，所以在電湧吸收器1 4 〇不會流動電流。但是 ，在電路侵入感應雷等電湧時，對應於其電湧之電壓將施 加於放電間隙1 4 2 A兩端。倘此電湧電壓爲該電湧吸收 器1 4 0之放電開始電壓以上時，放電間隙1 4 2 A間之 絕緣就受到破壞，在放電間隙1 4 2 A將發生輝光放電（ glow-discharge)。並且若電湧繼續時，放電氣體就變成高 溫而離子化，不僅從輝光放電移行至並且變成帽蓋電極 143之放電，並且可流動大量之電湧。 此結果，對於欲保護之電路或機器不會作用電湧，這 些電路或機器就可免於損傷。按，電湧吸收器1 4 〇並非 由一次放電而受到破壞，依條件可反復使用1 0 0 0次左 右。這一點，以一次使用就破壞而必須再次設置之保險絲 大爲不同。 然而，此電湧吸收器1 4 0，從其構造必然地經由導 線與外部電路連接，所以，對於形成電路之基板就不能表 面安裝，又，因必須在玻璃管1 4 6內部封入圓柱型絕緣 子1 4 1所以小型化變成困難。 因此，不能因應電子電路之小型化、高密度化之產業 上之要求。 因此，仍維持電湧吸收器之性能作爲解決上述問題之 電湧吸收器，於日本專利特開平8 - 6 4 3 3 6號公報’ -----------衣— (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5 - 478229478229 A7 B7 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a wafer-type surge absorber for protecting electronic circuits or communication devices from surges or noise from lightning, and a method for manufacturing the same. The present invention is based on Japanese patent applications (Japanese patents No. 11-155464, No. 11-210499, No. 1- 2 1 0 5 0 0, No. 1-34 No. 1 476, No. 2000-199651, No. 2000-2 3 No. 2208), the content of this Japanese application is adopted as part of this specification. [Background Art] For the purpose of protecting electronic circuits or communicators from surges or noises acting on circuits from inside and outside the circuit, various surge absorbers have been developed from the past and are effectively used. Surge absorbers are parts of electronic devices such as telephones and data devices that are connected to communication lines, or CRT drive circuits, such as electric shock circuits that are susceptible to abnormal voltages such as lightning surges or static electricity, or are installed in parallel to the machine. When a surge occurs Leakage discharge surges to protect the circuit, or those located in the ground circuit also discharge to protect the circuit. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Among them, the surge absorber 140 of the type shown in Fig. 13 has a good surge response and is widely used because of its superior life characteristics. This surge absorber is installed on the surface of a cylindrical insulator 1 4 1 and a discharge gap 1 4 2 A is formed in the middle part of the absorber element formed by the conductive film 1 4 2 to cover the attached heat dissipation wires. (Slug lead) 145 cap electrode 143, together with the discharge gas, glass tube 146 -4- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 Annex 1 Patent Application No. 89125381 Chinese Manual amendment page A7 January 91, amendment of B7 " V. Description of invention (2) Sealer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to explain the operation principle of this surge absorber 1 40, when the circuit operates in the normal state, there is a discharge gap 1 4 2 A in the middle of the conductive membrane 1 2 Therefore, current does not flow in the surge absorber 1 40. However, when a circuit invades a surge such as an inductive lightning, a voltage corresponding to the surge will be applied across the discharge gap 14 2 A. If the surge voltage is higher than the discharge start voltage of the surge absorber 1 40, the insulation between the discharge gap 1 4 2 A will be destroyed, and a glow-discharge will occur at the discharge gap 1 4 2 A . And if the surge continues, the discharge gas becomes high temperature and ionizes, and not only migrates from the glow discharge to and becomes the discharge of the cap electrode 143, but also a large amount of surge can flow. As a result, no surge is applied to the circuits or machines to be protected, and these circuits or machines are protected from damage. Press, the surge absorber 1 400 is not damaged by a single discharge, and can be used repeatedly 10,000 times depending on the conditions. This is very different from a fuse that must be re-set because it will break after one use. However, this surge absorber 140 must be connected to an external circuit via a wire from its structure. Therefore, the substrate forming the circuit cannot be surface-mounted, and a cylindrical insulator must be sealed inside the glass tube 146. 1 4 1 So miniaturization becomes difficult. Therefore, it cannot meet the industrial requirements for miniaturization and high density of electronic circuits. Therefore, the performance of the surge absorber is still maintained as a surge absorber that solves the above problems. It is disclosed in Japanese Patent Laid-Open No. 8-6 4 3 3 6 '----------- clothing — (Please Please read the notes on the back before filling this page) The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) -5-478229
五、發明說明（3 ) 提案有第1 4圖所示晶片型電湧吸收器丨5 〇。此晶片型 電湧吸收器1 5 0，係在直方體狀之絕緣性基板i 5丄表 面，設有形成放電間隙1 5 3之放電電極1 5 2。又，在 絕緣性基板1 5 1兩端，配置有1對與放電電極丨5 2導 通之1組端子電極1 5 4。並且，爲了形成塡充放電氣體 之氣密性1 5 5，接著絕緣性基板1 5 1 —部與覆蓋放電 間隙1 5 3之氣密帽蓋1 5 6。 晶片型電湧吸收器1 5 0，因將端子電極與外部電路 之間以焊錫以電方式連接，就可安裝於形成電路之基板表 面’並且’因不需要封入用之玻璃管或帽蓋電極，所以可 形成爲小型化。又，基本性動作原理，因與上述電湧吸收 器1 4 0毫無二致，所以作爲電湧吸收器之性能，爲毫無 遜色於上述電湧吸收器1 4 0。 但是，此晶片型電湧吸收器1 5 0雖然可安裝於基板 表面，但是進行放電之氣密性1 5 5之容積小，所以具有 電湧耐量小的問題 經濟部智慧財產局員工消費合作社印製 於晶片型電湧吸收器1 5 0，欲導通放電電極1 5 2 與端子電極1 5 4間時，將放電電極1 5 2，延伸到絕緣 性基板1 5 1兩端，採取在此電極上直接重疊端子電極 1 5 4之方法。因此，端子電極1 5 4隆出於絕緣性基板 1 5 1上之寬度分量必須將氣密帽蓋1 5 6端部偏移於絕 緣性基板1 5 1之中央部，所以氣密性1 5 5之容積會變 小。於晶片型電湧吸收器1 5 0 ’電湧耐量’因與氣密性 1 5 5之容積成比例，所以第1 4圖之晶片型電湧吸收器 -6 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公« ) 478229 ___B7_____ 五、發明說明（4) 1 5 0，係相對性地電湧耐量會變小。此時雖然可增大絕 緣性基板1 5 1之表面積，但是安裝面積會擴大所以不宜 〇 晶片型電湧吸收器1 5 0所以不得不成爲這種構造， 乃即使在絕緣性基板1 5 1端部形成端子電極1 5 4，因 放電電極1 5 2厚度會提高壽命特性，薄至1 //m左右， 致使不能確保端子電極1 5 4與放電電極1 5 2間之導通 所致。尤其，若將放電電極1 5 2使用複數對時，欲確保 所有對之導通爲非常困難之事。 又，欲對於電湧吸收器施加電湧，加以觸發時，在放 電期間施加高電壓，需要放電契機之釋出電子，但是，如 第1 4圖所示晶片型電湧吸收器1 5 0，係放電電極1 5 2爲1對，而放電間隙1 5 3爲只有1條，所以強調電場 .之點爲少，放電將延遲。 並且，第1 4圖之晶片型電湧吸收器1 5 0，因並非 上下對稱形狀，所以安裝時就必須整列上下，欲自動地安 裝基板時，這一點工程將變成複雜。 經濟部智慧財產局員工消費合作社印製 於是，將晶片型電湧.吸收器之其他形態表示於第1 5 圖、第1 6圖。第1 5圖所示晶片型電湧吸收器1 6 0， 係一種具有被貫通空洞之絕緣性基板1 6 1、在絕緣性基 板1 6 1兩端配置成閉合上述空洞之1對端子電極1 6 2 、與由絕緣性基板1 6 1與端子電極1 6 2所閉合之空洞 而封入有放電氣體之氣密室1 6 3、與在氣密室1 6 3內 之絕緣性基板1 6 1上裝設配置放電間隙1 6 4之1對放 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 ___ B7 五、發明說明（5) 電電極1 6 5所構成者，端子電極16 2與放電電極· 1 6 5爲被導通。 請 先 hi 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 第1 6圖所示晶片型電湧吸收器1 7 0，係在氧化鋁 等所成之絕緣性基板1 7 1板面對向形成有放電電極 172、173，並且，在其放電電極172與放電電極 1 7 3間設有放電間隙1 7 4。又，如在這些放電電極 1 7 2、1 7 3上方形成氣密室1 7 3，成箱狀之玻璃製 (絕緣物製）之氣密帽蓋1 7 6周緣部爲接著於絕緣性基 體1 7 1上，形成於其內部之氣密室1 7 5內成爲適合於 放電種類之氣體環境。並且，如被覆氣密帽蓋1 7 6與絕 緣性基板1 7 1兩端部所形成之端子電極1 7 7、1 7 8 爲連接於各放電電極1 7 2、1 7 3。 經濟部智慧財產局員工消費合作社印製 並且，在放電電極1 7 2、1 7 3間經由放電間隙 1 7 4流動電湧電壓時，就如第1 6圖以符號B所示，經 由其放電間隙1 7 4在放電電極1 7 2、1 7 3間觸發輝 光放電，此放電爲如箭頭C所示，將上述氣密室1 7 5內 以沿面放電之形態到兩放電電極1 7 2、1 7 3基端側逐 漸伸展，再如符號D所示在兩放電電極1 7 2、1 7 3基 端側之間藉電孤放電，以可吸收電湧電壓。 然而，晶片型電湧吸收器，因可提高可靠性及耐久性 ，所以也要求可耐於大的電湧電壓。 上述之各晶片型電湧吸收器1 50、1 60、1 70 ，係侵入電湧，若此長時間繼續時就由於輝光放電移行於 端子電極間之電孤放電。但是移行於電孤放電時，晶片型 -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 ____ B7 五、發明說明（6 請 先 hi 讀 背 之 注 意 事 項 再 填 寫 本 頁 電湧吸收器係構造上散熱少，所以內部溫度將上升到數千 度（°C )。放電電極因由熔點高之陶瓷或金屬所成，所以 不會因一次或二次之放電就損傷。但是，電湧容易繼續變 長之電路或電湧頻繁地發生之電路，由於反復放電之熱而 形成放電電極之導電性膜受到損傷，放電間隙之間隔會擴 大。放電開始電壓因依存於放電間隙之間隔，所以放電間 隙擴大時放電開始電壓就變高，對於電子電路或通訊機施 加意外之高電壓而發生破壞之情形。 又，晶片型電湧吸收器，係在電孤放電時，於放電電 極基端部就會成爲點狀態流入電孤電流，所以其部分變成 局部性電流密度偏高之狀態。因此，變成局部高溫，例如 第1 6圖所示，晶片型電湧吸收器1 7 0若構成爲絕緣性 基板1 7 1與氣密帽蓋1 7 6接著之狀態時，由於其熱致 使接著絕緣性基板1 7 1與絕緣性基板1 6 1之接著劑開 始熔解，致使氣密帽蓋1 7 6打開之結果，電湧電流例如 於3 Ο A左右會受到破壞之問題。 經濟部智慧財產局員工消費合作社印製 又，作爲其他習知技術，例如有揭示於日本專利特開 2000 - 12186號公報者。 此係，在放電電極之下形成有由鑽石所成之放電開始 電極者，此鑽石固有之特性，亦即，功函數爲小，因容易 釋出電子之特性，於發生電湧電壓時，從鑽石製之放電開 始電極之電場電子釋出即使於低電壓也容易釋出初期電子 ，而可在低電壓動作。 然而，晶片型電湧吸收器，被要求也可對應低電壓化 -9 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（7) ，並且也可使用於高頻率電路。 然而，晶片型電湧吸收器，係絕緣性基體之介電常數 爲一定，於絕緣性_基體內增強電場之作用不顯著，只由所 氣密室內之放電氣體 ，就必須特定放電電 以外之降低材質放電 0 0 0 - 1 2 1 8 6 鑽石形成放電開始電 法、淤漿法等形成鑽 要嚴格之製造管理， 緣性基體以電介質形 就可低電壓化，但是 增大，因絕緣性基體 製造可在低電壓動作 湧吸收器將變成困難 訂 請 先 讀 背 面 之 注 意 事 項 再 填 _ ί裝 頁 使用之放電電極之功函數、與使用於 決定放電開始電壓，欲達成低電壓化 極或放電氣體之材質，具有不能以其 開始電壓之問題。 又，揭示於上述日本專利特開2 號公報之晶片型電湧吸收器，雖然由 壓，但是在這種技術，係例如C V D 石薄膜時，裝置不僅變成大規模，需 具有不容易製造之問題。 並且，雖然未圖示，但是，將絕 成，藉增大其介電常數集中電場認爲 變成這種構成時，全體之靜電電容就 將成爲低通濾波器發生作用，所以欲 且也可使用於高頻率電路之晶片型電 經濟部智慧財產局員工消費合作社印製 於是，以往，爲欲製造這種晶片型電湧吸收器時，例 如第1 7、第1 8圖所示，在具有絕緣性及耐熱性具可保 持氣密之基板1 8 1上，形成放電電極1 8 3，在其中央 部將寬度0 · 1〜5 0 0 // m之放電間隙1 8 5使用雷射 切割形成。接著，在基板1 8 1上周邊，塗布接著劑 1 8 7。接著，如第1 9圖所示，在基板1 8 1上，如氣 -10- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（8) 密室所成形成密閉空間1 8 9覆蓋氣密帽蓋1 9 1。氣密 帽蓋1 9 1係在密閉空間1 8 9中央位有放電間隙1 8 5 ，且接著成放電電"極1 8 3兩端從外部溢出。又，氣密帽 蓋1 9 1，係在大氣中或惰性氣體中，將所需之氣體封入 於密閉空間1 8 9加以密封。最後，在溢出之放電電極 1 8 3兩端部，以烘烤，電鍍等連接如第2 0圖所示之端 子電極1 9 3，而完成晶片型電湧吸收器1 9 5。 上述之以往晶片型電湧吸收器，係於放電間隙1 8 5 之形成工程，放電間隙之寬度爲邊被雷射切割所調整加以 設定，其結果，由所形成之放電間隙1 8 5決定放電開始 電壓。另者，晶片型電湧吸收器，係藉使放電間隙1 8 5 之切入爲深，連續施加電湧時，由於從放電電極1 8 3所 發生之導電性灰塵所引起之放電間隙1 8 5之堵塞將被消 除，而可提升電湧吸收之壽命特性。 然而，這些放電開始電壓之低電壓化、與長壽命化同 時達成時則有下列問題。 經濟部智慧財產局員工消費合作社印製 亦即，欲將放電開始電壓低電壓化，因必須將放電間 隙1 8 5以狹窄寬度切割，所以必須抑制雷射之輸出，其 結果，具有耐熱性之基板1 8 1進行深切爲困難之事。因 此，若將放電開始電壓低電壓化時，會降低壽命特性。 對於此，若投入大功率進行雷射切割時，就可在基板 1 8 1上進行深之切入，雖然可提升壽命特性，但是隨著 放電間隙1 8 5變深放電間隙寬度會擴大，而不能變成放 電開始電壓之低電壓化。 -11 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（9) 又，爲了長壽命化之深切，因下列理由也是困難之事 請 先 讀 背 之 注 意 事 項 再 填 寫 本 頁 亦即，具有耐屬性之基板1 8 1，因散熱性不良，在 放電時所發生之熱逃逸之路徑爲只從放電電極1 8 3對於 端子電極1 9 3之路徑而已，於此路徑，若放電電極 1 8 3厚度不足時，就不能充分進行熱傳導，若連續施加 電湧時，不能充分散熱所發生之放電熱量，放電電極 1 8 3發生劣化而元件之電特性會發生變化。作爲此解決 措施，將放電電極1 8 3形成爲厚，以提升散熱特性將是 有效手段，但是，若增厚放電電極1 8 3時，欲對於基板 1 8 1進行深切將變成困難。 【發明槪要】 本發明之目的，係提供一種不擴大安裝面積而增大電 湧耐量之晶片型電湧吸收器。 爲了達成上述目的，於本發明之晶片型電湧吸收器， 其特徵爲： 經濟部智慧財產局員工消費合作社印製 直方體狀之絕緣性基板，與 絕緣性之氣密帽盖：連同絕緣性基板形成塡充放電氣 體之箱狀氣密室之底面開口，與 端子電極：設於氣密室兩端部，與 1對放電電極，與端子電極導通，在氣密室內形成放 電間隙所裝設，與 在放電電極與端子電極之連接部，爲了放大連接面積 -12- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 —_ B7 五、發明說明（10 所設之連接面所構成。 ·(請先隨讀背面之注意事項再填寫本頁) 若依據此晶片型電湧吸收器’放電電極之厚度即使薄 到1 // m，在連接_面’與端子電壓以廣泛面積重疊’兩電 極間之導通將變成確實。因此，將氣密帽蓋之端部與絕緣 性基體端部配合，因可將氣密室增大爲最大限’所以’可 增大電湧耐量。具體上，爲放電電極爲延伸到連接部，因 在連接部與端子電極重疊而導通，所以，可充分確保充分 之導通。因此，.因可將氣密帽蓋端部變成與絕緣性基體端 部同一位置，所以其分量氣密室變大，可增加電湧耐量。 又，外形上成爲上下對稱形狀，所以安裝時不必進行製品 之上下判斷。 又，本發明之目的，提供一種晶片型電湧吸收器’其 係增大電湧量，又，減少開始放電之延遲。 爲了達成上述目的，於本發明之晶片型電湧吸收器’ 其特徵爲： 直方體狀之絕緣性基板，與 經濟部智慧財產局員工消費合作社印製 絕緣性之氣密帽蓋：連同絕緣性基板形成塡充放電氣 體之箱狀氣密室之底面開.口，與 端子電極：設於氣密室兩端部，與 2至5對之放電電極，與端子電極導通，在氣密室內 形成放電間隙所裝設，與 在放電電極與端子電極之連接部由擴大連接面積所裝 設之連接面所構成。 若依據此晶片型電湧吸收器，放電電極之厚度即使薄 -13- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（1令 到1 // m，在連接面，與端子電壓以廣泛面積重疊，兩電 極間之導通將變成確實。因此，將氣密帽蓋之端部與絕緣 性基體端部配合，13可將氣密室增大爲最大限，所以’可 增大電湧耐量。具體上，爲放電電極爲延伸到連接部，因 在連接部與端子電極重疊而導通，所以’可充分確保充分 之導通。因此，因可將氣密帽蓋端部變成與絕緣性基體端 部同一位置，所以其分量氣密室變大’可增加電湧耐量。 又，即使放電電極之對數增加，放電電極與端子電極間之 導通，也可同樣確保。 並且，因將放電電極成爲2至5對，所以施加電湧時 電場集中之點變多，在施加電湧時可順利地觸發而放電延 遲變少。並且，外形上成爲上下對稱形狀，所以安裝時不 必進行製品之上下判斷。 又，本發明之.目的係提供一種可防止由電湧電壓受到 破壞之晶片型電湧吸收器。 爲了達成上述目的，於本發明之晶片型電湧吸收器， 其係在絕緣性基體上面，經由放電間隙互相相對向形成放 電電極，並且，如圍住這些放電電極之上方空間接著氣密 帽蓋之周邊部所成者，其特徵爲；放電電極，係位於氣密 帽蓋與絕緣性基體接著部之基端部，爲較形成放電間隙之 先端部電阻値爲小。 若依據此晶片型電湧吸收器，因電湧電壓之發生晶片 型電湧吸收器放電時，對於放電電極之基端部係以點狀態 流入電孤電流，但是因基端部係電阻値爲小，所以可擴散 ·(請先閱讀背面之注意事項再填 裝^^丨 :寫 -·線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -14- 478229 A7 _ B7 電孤電 接著部 蓋不會 並且， 又 型電湧 爲 其係具 直 1 所貫通 氣 有放電 流之流動， 之電孤電流 打開之結果· 可提局耐電 ，本發明之 吸收器。 了達成上述 有； 方體狀絕緣 對端子電極 之空洞，與 密室：由絕 氣體，與 請 先 m 讀 背 之 注 意 事 項 再 填 寫 本 頁 不僅可抑制通過氣密帽蓋與絕緣性基體 之電流密度，並且，因電湧電壓氣密帽 \不僅可獲得對於電湧電壓之耐久性， 湧電壓。 目的係提供一種壽命長可靠性高之晶片 目的，於本發明之晶片型電湧吸收器， 性基體：具有在內部所貫通空洞，與 :在絕緣性基體兩端配置成如封閉上述 緣性基體與端子電極所閉合之空洞封入 1對放電電極：在氣密室內之絕緣性基體上之一面裝 設配置一面放電間隙，並且， 經濟部智慧財產局員工消費合作社印製 放電電極與端子電極以電性導通者，其特徵爲； 在氣密室內之絕緣性基體上之另面，裝設中繼與放電 電極與端子電極所隔離之電孤放電之中繼電極。 若依據此晶片型電湧吸收器，如上述，在晶片型電湧 吸收器侵入繼續時間長之電湧時，由於端子電極間之電孤 放電雖然氣密室內會變成高溫，但是與放電電極與端子電 極爲在隔離位置形成有中繼電極，所以，在電孤放電時放 電之一部爲經由中繼電極，在中繼電極與端子電極之間進 行電孤放電。因此，在放電電極間之放電量就變少，可大 -15- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（谑 幅度地抑制對於放電電極之熱負荷。其結果，即使因反復 之電湧施加，放電間隙發生損傷會變少，電湧吸收器之壽 請 先 m 讀 背 Sj 之 注 意 事 項 再 填 寫 本 頁 命會延長。 _ 又，本發明之目的係提供一種，可同時達成開始放電 電壓、與長壽命化之晶片型電湧吸收器。 爲了達成上述目的，本發明之晶片型電湧吸收器，係 在具有耐熱性之絕緣性基體上相隔微小間隙形成一對放電 電極，將微小間隙包圍於密閉空間內之氣密帽蓋爲密著於 絕緣性基體上者，其特徵爲；在絕緣性基體與放電電極之 間設至少較絕緣性基體耐熱性更低之低耐熱絕緣層。 若依據此晶片型電湧吸收器，在絕緣性基體與放電電 極之間設有較絕緣性基體耐熱低更低之低耐熱絕緣層，所 以，放電放極之微小間隙爲以雷射切割所形成時，低耐熱 絕緣性層更容易深切。藉此，可形成寬度狹並且深微小間 隙，放電開始電壓爲低，並且，導電性物質等灰塵不容易 堆積，可同時達成放電開始電壓之低電壓化與長壽命化。 經濟部智慧財產局員工消費合作社印製 又，本發明之目的，係提供一種可同時達成放電開始 電壓之低電壓化，與長壽命化之晶片型電湧吸收器。 爲了達成上述目的，本發明係一種晶片型電湧吸收器 ，其係在具有耐熱性之絕緣性基體上相隔微小間隔形成一 對放電電極，將微小間隙包圍於密閉空間內之氣密帽蓋爲 密貼於絕緣性基體上者，其特徵爲；在絕緣性基體與放電 電極之間設有至少較絕緣性基體耐熱性低之低耐熱絕緣層 -16- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（14 (請先略讀背面之注意事項再填寫本頁) 依據此晶片型電湧吸收器，在絕緣性基體與放電電極 之間因至少較絕緣性基體耐熱性低之低耐熱絕緣層，所以 ，放電電極之微小词隙爲以雷射切割所形成時，低耐熱絕 緣層也可容易深切。藉此，就可形成寬度狹窄且深微小間 隙，放電開始電壓爲低，並且，導電性物質等之灰塵就不 容易堆積，可同時達成放電開始電壓之低電壓化與長壽命 化。 又，本發明之目的，係提供一種晶片型電湧吸收器之 製造方法，其係可同時放電開始電壓之低電壓化、與長壽 命化。 爲了達成上述目的，係提供一種晶片型電湧吸收器之 製造方法，其特徵爲包括：在具有耐熱性之絕緣性基體之 平坦基板面上形成較絕緣性基體之耐熱性低之帶狀低耐熱 絕緣層之工程、與在帶狀之低耐熱絕緣層上積層同一帶狀 之導電膜之工程、與將導電膜，向長向直交方向使用雷射 切割連同低耐熱絕緣層分離相隔微小間隔形成爲一對之放 電電極。 經濟部智慧財產局員工消費合作社印製 於此晶片型電湧吸收器之製造方法，係在絕緣性基體 上形成低耐熱絕緣層，此低耐熱絕緣層上所積層之導電膜 爲連同低耐熱絕緣層以雷射切割，所以即使低輸出之雷射 ，連同導電膜深切低耐熱絕緣層，可容易得到具有寬度狹 窄且深微小間隙之晶片型電湧吸收器。 又，本發明之目的，係提供一種晶片型電湧吸收器， 不僅可對應低電壓化，並且，也可使用於高頻率電路。 -17- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229V. Description of the invention (3) The proposal includes a wafer-type surge absorber shown in FIG. 14. This wafer-type surge absorber 150 is provided on the surface of a rectangular parallelepiped insulating substrate i 5 丄, and is provided with a discharge electrode 15 2 forming a discharge gap 15 3. In addition, a pair of terminal electrodes 1 5 4 which are in conduction with the discharge electrodes 5 2 are arranged at both ends of the insulating substrate 1 5 1. In addition, in order to form the gas-tightness 1 5 5 of the tritium charge and discharge gas, an insulating substrate 1 5 1-part and a gas-tight cap 1 5 6 covering the discharge gap 1 5 3 are adhered. The chip-type surge absorber 150 can be mounted on the surface of the circuit board by soldering the terminal electrodes and the external circuit electrically by solder, and it does not require a glass tube or cap electrode for sealing. , So it can be made compact. In addition, since the basic operation principle is the same as the above-mentioned surge absorber 140, the performance as a surge absorber is not inferior to the above-mentioned surge absorber 140. However, although this wafer-type surge absorber 150 can be mounted on the surface of a substrate, the airtightness of the discharge 150 has a small volume, so it has a problem of low surge tolerance. Made of a wafer-type surge absorber 1 50. When the discharge electrode 1 5 2 and the terminal electrode 1 5 4 are to be turned on, extend the discharge electrode 1 5 2 to both ends of the insulating substrate 1 5 1 and use this electrode. The method of directly overlapping the terminal electrodes 154. Therefore, the width of the terminal electrode 1 5 4 on the insulating substrate 1 5 1 must offset the end of the airtight cap 1 5 6 from the center of the insulating substrate 1 5 1, so the airtightness 1 5 The volume of 5 will become smaller. For wafer-type surge absorber 1 50 'Surge resistance' is proportional to the volume of airtightness 1 5 5 so the wafer-type surge absorber in Figure 14-6-This paper size applies to Chinese national standards (CNS) A4 specifications (210 X 297 male «) 478229 ___B7_____ 5. Description of the invention (4) 1 50, the relative surge resistance will be smaller. At this time, although the surface area of the insulating substrate 151 can be increased, the mounting area will be enlarged, so it is not suitable. The wafer-type surge absorber 1500 has to have this structure, even at the end of the insulating substrate 151. The terminal electrode 154 is formed in the part. The thickness of the discharge electrode 152 will increase the life characteristics, and it is as thin as about 1 // m. As a result, the conduction between the terminal electrode 154 and the discharge electrode 152 cannot be ensured. In particular, when a plurality of pairs of discharge electrodes 15 are used, it is very difficult to ensure that all pairs are conductive. In addition, if a surge is to be applied to the surge absorber and triggered, a high voltage is applied during the discharge period, and the electrons released by the discharge opportunity are required. However, as shown in FIG. 14, the wafer-type surge absorber 1 50, The number of discharge electrodes 1 5 2 is one pair, and the discharge gap 1 5 3 is only one, so the emphasis is on the electric field. The less the point, the discharge will be delayed. In addition, since the wafer-type surge absorber 150 shown in FIG. 14 is not vertically symmetrical, the entire row must be vertically aligned during installation. This process becomes complicated when the substrate is to be automatically installed. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, other forms of chip-type surges and absorbers are shown in Figures 15 and 16. The wafer-type surge absorber 160 shown in FIG. 15 is an insulating substrate 1 6 having a through hole, and a pair of terminal electrodes 1 arranged at both ends of the insulating substrate 1 6 1 to close the cavity. 6 2 、 Airtight chamber 1 6 3 sealed with a discharge gas enclosed by a cavity closed by an insulating substrate 1 6 1 and a terminal electrode 1 6 2 and an insulating substrate 1 6 1 inside the airtight chamber 1 6 3 It is assumed that the discharge gap 1 6 4 of 1 is applied to the paper size of the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 ___ B7 V. Description of the invention (5) The electrode composed of 1 6 5 The terminal electrode 16 2 and the discharge electrode 1 65 are conductive. Please read the precautions on the back first and then fill in the wafer-type surge absorber 1 70 shown in Figure 16 on this page. The insulating substrate 1 7 1 is made of alumina and the like. A discharge electrode is formed facing the plate. 172 and 173, and a discharge gap 174 is provided between the discharge electrode 172 and the discharge electrode 173. In addition, if an airtight chamber 1 7 3 is formed above these discharge electrodes 1 7 2, 1 7 3, a box-shaped glass (made of insulating material) air-tight cap 1 7 6 is connected to the insulating substrate 1 at the periphery. The airtight chamber 1 7 5 formed on the inside of the 7 1 becomes a gas environment suitable for the type of discharge. In addition, the terminal electrodes 1 7 7 and 1 8 formed on both ends of the hermetically sealed cap 1 7 6 and the insulating substrate 1 7 1 are connected to the respective discharge electrodes 1 7 2 and 1 7 3. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and when a surge voltage flows through the discharge gap 1 7 4 between the discharge electrodes 1 7 2 and 17 3, it is discharged via the symbol B as shown in FIG. 16 The gap 1 7 4 triggers a glow discharge between the discharge electrodes 1 7 2 and 1 7 3. This discharge is shown in the arrow C. The airtight chamber 1 7 5 is discharged along the surface to the two discharge electrodes 1 7 2 and 1 7 3 The base end side is gradually extended, and then, as shown by the symbol D, a solitary discharge is performed between the base ends of the two discharge electrodes 1 7 2 and 1 7 to absorb the surge voltage. However, chip-type surge absorbers are required to withstand large surge voltages because they can improve reliability and durability. Each of the wafer-type surge absorbers 1 50, 1 60, and 1 70 described above are invading surges. If this continues for a long period of time, electrical discharges that migrate between the terminal electrodes due to glow discharge will occur. However, when migrating to electrical isolation discharge, the chip type -8- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 ____ B7 V. Description of the invention (6 Please read the precautions before reading the back If you fill in this page, the surge absorber has less heat dissipation in the structure, so the internal temperature will rise to thousands of degrees (° C). The discharge electrode is made of ceramic or metal with high melting point, so it will not be discharged by one or two times. Damage is caused. However, in a circuit where a surge is likely to continue to grow or a surge frequently occurs, the conductive film forming the discharge electrode is damaged due to the heat of repeated discharges, and the interval between discharge gaps is increased. The discharge start voltage depends on The interval between the discharge gaps, so that the discharge start voltage becomes higher when the discharge gaps are widened, and accidental high voltages are applied to electronic circuits or telecommunications to cause damage. Also, chip-type surge absorbers are used during electrical isolation discharge. The electric solitary current flows into the point state at the base end of the discharge electrode, so that part of it becomes a state where the local current density is relatively high. If the wafer-type surge absorber 170 is configured as an insulative substrate 1 71 and an air-tight cap 1 7 6 as shown in FIG. 16, the insulation is caused by the heat. The adhesives of the substrate 1 71 and the insulating substrate 1 6 1 began to melt, and as a result, the airtight cap 1 7 6 was opened, and the surge current was damaged, for example, about 3 0 A. Employees, Bureau of Intellectual Property, Ministry of Economic Affairs Printed by a consumer cooperative, as another known technology, for example, disclosed in Japanese Patent Laid-Open No. 2000-12186. This is a diamond that has a discharge start electrode formed of a diamond under the discharge electrode, which is inherent to the diamond. Characteristics, that is, the work function is small, because it is easy to release electrons, when a surge voltage occurs, the electric field electrons from the diamond-made discharge start electrode release the initial electrons even at low voltage, and Can operate at low voltage. However, chip-type surge absorbers can also be used for low voltage requirements. -9-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. invention Note (7), and it can also be used in high-frequency circuits. However, the dielectric constant of the wafer-type surge absorber is a certain insulating substrate, and the effect of enhancing the electric field in the insulating substrate is not significant. The discharge gas in the airtight chamber must be specified to reduce the material discharge other than the discharge electricity. 0 0 0-1 2 1 8 6 Diamond formation and discharge start electric method, slurry method, etc. Forming drills must be strictly manufactured and managed. The voltage can be reduced, but the voltage can be increased, but it will become difficult to operate the surge absorber at low voltage due to the manufacture of the insulating substrate. Please read the precautions on the back first and then fill in the work function of the discharge electrode used on the page. It is used to determine the starting voltage of the discharge, and the material that is intended to achieve a low voltage electrode or discharge gas has a problem that the starting voltage cannot be used. In addition, although the wafer type surge absorber disclosed in the above-mentioned Japanese Patent Laid-Open No. 2 is pressurized, when this technology is, for example, a CVD stone film, the device becomes not only large-scale, but also has a problem that it is not easy to manufacture. . In addition, although it is not shown in the figure, it is considered that the absolute capacitance is increased by increasing the dielectric constant of the concentrated electric field, and the entire electrostatic capacitance will function as a low-pass filter. Printed on a high-frequency circuit chip-type consumer electronics cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In the past, when manufacturing such chip-type surge absorbers, for example, as shown in Figures 17 and 18, Discharge resistance and heat resistance can be maintained on the airtight substrate 1 8 1 to form a discharge electrode 1 8 3, and a discharge gap 1 0 5 m in width at the central portion 1 8 5 is formed by laser cutting. . Next, an adhesive agent 1 8 7 is applied on the periphery of the substrate 1 8 1. Next, as shown in Figure 19, on the substrate 1 81, Ruqi-10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 B7 V. Description of the invention (8 ) The closed space formed by the closed room 1 8 9 covers the airtight cap 1 9 1. The air-tight cap 1 9 1 has a discharge gap 1 8 5 at the center of the closed space 1 8 9 and is connected to the discharge electrode "8" at both ends and overflows from the outside. In addition, the airtight cap 1 91 is sealed in a closed space 1 8 9 by sealing the required gas in the atmosphere or an inert gas. Finally, the terminal electrodes 1 3 shown in Fig. 20 are connected to both ends of the overflowing discharge electrode 1 8 3 by baking, plating, etc., and a wafer-type surge absorber 195 is completed. The above-mentioned conventional wafer-type surge absorber is a process for forming a discharge gap 1 8 5. The width of the discharge gap is adjusted by laser cutting. As a result, the discharge is determined by the formed discharge gap 1 8 5. Start voltage. In addition, the wafer-type surge absorber is a discharge gap 1 8 5 caused by conductive dust generated from the discharge electrode 1 8 3 when the discharge gap 1 8 5 is cut deep. The blockage will be eliminated, and the life characteristics of surge absorption can be improved. However, when these discharge starting voltages are lowered and extended at the same time, the following problems arise. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, that is, to reduce the discharge start voltage, the discharge gap must be cut to a narrow width of 18.5, so the output of laser must be suppressed. As a result, it has heat resistance. It is difficult to perform deep cutting of the substrate 1 8 1. Therefore, if the discharge start voltage is lowered, the life characteristics are lowered. In this regard, if high power is used for laser cutting, deep cutting can be performed on the substrate 1 81, although the life characteristics can be improved, but as the discharge gap 1 8 5 becomes deeper, the discharge gap width will expand and cannot The voltage becomes lower than the discharge start voltage. -11-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (9) In addition, in order to deepen the longevity, it is also difficult for the following reasons. Please read this page again to fill in this page. That is, the substrate 1 8 1 with resistance properties, due to poor heat dissipation, the path of heat escape during discharge is only from the discharge electrode 1 8 3 to the terminal electrode 1 9 3 It is only the path. In this path, if the thickness of the discharge electrode 1 3 3 is insufficient, the heat conduction cannot be fully performed. If continuous surge is applied, the discharge heat generated cannot be sufficiently dissipated, the discharge electrode 1 3 3 is deteriorated, and the component Electrical characteristics will change. As a solution to this, it is effective to increase the thickness of the discharge electrode 1 8 3 to improve heat dissipation characteristics. However, if the discharge electrode 1 8 3 is thickened, it becomes difficult to deeply cut the substrate 1 8 1. [Summary of the invention] The object of the present invention is to provide a wafer-type surge absorber that does not increase the mounting area and increases the surge withstand capability. In order to achieve the above-mentioned object, the wafer-type surge absorber of the present invention is characterized in that: a cuboid-shaped insulating substrate is printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and an insulating airtight cap: together with the insulating property The bottom surface of the box-shaped airtight chamber formed with a substrate for charging and discharging gas is connected to the terminal electrodes: provided at both ends of the airtight chamber, and connected with a pair of discharge electrodes to the terminal electrodes to form a discharge gap in the airtight chamber. In the connection between the discharge electrode and the terminal electrode, in order to enlarge the connection area -12- This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 —_ B7 V. Description of the invention (10 The connection surface is composed. (Please read the precautions on the back side before filling out this page.) If the thickness of the discharge electrode of this chip-type surge absorber is as thin as 1 // m, the voltage on the connection surface and the terminal voltage Over a wide area, the conduction between the two electrodes will be assured. Therefore, by matching the end of the airtight cap with the end of the insulating substrate, the airtight chamber can be enlarged to the maximum. Increase the surge resistance. Specifically, the discharge electrode is extended to the connection part, because the connection part and the terminal electrode are connected to each other, so that sufficient conduction can be ensured. Therefore, the end of the airtight cap can be covered. It is at the same position as the end of the insulating substrate, so its component airtight chamber becomes larger, which can increase the surge resistance. Moreover, the shape is symmetrical up and down, so it is not necessary to judge the product up and down during installation. Furthermore, the object of the present invention, A wafer-type surge absorber is provided which increases the amount of surge and reduces the delay in starting discharge. In order to achieve the above object, the wafer-type surge absorber of the present invention is characterized by a cuboid-shaped insulation Insulated airtight caps printed with the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: together with the insulating substrates, the bottom surface of the box-shaped airtight chamber which is filled with charge and discharge gas is opened. Mouth and terminal electrodes: located in the airtight chamber The two ends are installed with 2 to 5 pairs of discharge electrodes and are connected to the terminal electrodes to form a discharge gap in the airtight chamber. They are connected to the discharge electrode and the terminal electrode. The part is composed of the connection surface which is installed to enlarge the connection area. If the chip-type surge absorber is used, the thickness of the discharge electrode is even thin -13- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (1 order to 1 // m, at the connection surface, and the terminal voltage overlaps with a wide area, the conduction between the two electrodes will become true. Therefore, the end of the airtight cap and the With the end of the insulating base mating, 13 can increase the airtight chamber to the maximum limit, so 'the surge resistance can be increased. Specifically, the discharge electrode is extended to the connection part, and is connected because the connection part overlaps with the terminal electrode. Therefore, 'sufficient conduction can be sufficiently ensured. Therefore, since the end portion of the airtight cap can be positioned at the same position as the end portion of the insulating substrate, the component airtight chamber becomes larger', and surge resistance can be increased. In addition, even if the number of pairs of the discharge electrodes increases, the conduction between the discharge electrodes and the terminal electrodes can be similarly ensured. In addition, since the number of discharge electrodes is 2 to 5, there are more points where the electric field is concentrated when a surge is applied, and it is possible to trigger smoothly when a surge is applied, and the discharge delay is reduced. In addition, the external shape is symmetrical up and down, so it is not necessary to judge the product from top to bottom during installation. It is another object of the present invention to provide a wafer-type surge absorber capable of preventing damage from a surge voltage. In order to achieve the above object, the wafer-type surge absorber of the present invention is formed on the insulating substrate, and discharge electrodes are formed opposite to each other through a discharge gap, and an air-tight cap is used to surround the space above the discharge electrodes. Those formed at the peripheral portion are characterized in that the discharge electrode is located at the base end portion of the bonding portion between the airtight cap and the insulating substrate, and has a smaller resistance 値 than the tip portion 形成 forming the discharge gap. According to this wafer-type surge absorber, when the wafer-type surge absorber is discharged due to a surge voltage, the base end portion of the discharge electrode flows into an electric lone current in a point state, but the resistance of the base end portion is Small, so it can spread. (Please read the precautions on the back before filling ^^ 丨: Write- · line · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumer Cooperatives. X 297 mm) -14- 478229 A7 _ B7 Electrically isolated electrical connection part cover will not break, and the shape of the surge is a direct current flowing through the gas flowing through it, and the result of the electrical isolated current opening can be The electric absorber of the present invention can achieve the above-mentioned requirements. The cavity of the rectangular electrode to the terminal electrode, and the closet: from the gas insulation, please read the precautions before reading this page, and then fill in this page to not only suppress the passing gas. The current density of the dense cap and the insulating substrate, and the gas tight cap due to the surge voltage can not only obtain the durability against the surge voltage, but also the surge voltage. The purpose is to provide a long life and high reliability. For the purpose of the wafer-type surge absorber of the present invention, a sexual substrate: a cavity penetrated in the interior, and a pair of holes disposed at both ends of the insulating substrate so as to close the marginal substrate and the terminal electrode are sealed in a pair Discharge electrode: a discharge gap is installed on one side of the insulating substrate in the airtight chamber, and the discharge electrode and terminal electrode printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs are electrically conductive, which is characterized by: On the other side of the insulating substrate in the dense room, a relay electrode for electrically isolated discharge separated by the relay and the discharge electrode and the terminal electrode is installed. If the chip-type surge absorber is used as described above, the chip-type surge When the absorber invades a surge that continues for a long time, the electrical isolation discharge between the terminal electrodes will become high temperature in the airtight chamber, but the relay electrode is formed at a separate position from the discharge electrode and the terminal electrode. One part of the discharge is an electrically isolated discharge between the relay electrode and the terminal electrode through the relay electrode. Therefore, the discharge amount between the discharge electrodes Less, can be larger -15- This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (谑 The thermal load on the discharge electrode is greatly suppressed. As a result, even Due to repeated surge application, the damage to the discharge gap will be reduced. The life of the surge absorber must be read before reading Sj's precautions before filling in this page. The life will be extended. _ Also, the purpose of the present invention is to provide a At the same time, a wafer-type surge absorber with a starting discharge voltage and a long life is achieved. In order to achieve the above object, the wafer-type surge absorber of the present invention forms a pair of discharges with a small gap on an insulating substrate having heat resistance. The electrode is a gas-tight cap that encloses a small gap in a closed space. It is characterized by being tightly attached to the insulating substrate. It is characterized by having a lower heat resistance between the insulating substrate and the discharge electrode than the insulating substrate. Heat-resistant insulation. According to this wafer-type surge absorber, a low heat-resistant insulating layer with lower and lower heat resistance than the insulating substrate is provided between the insulating substrate and the discharge electrode. Therefore, the micro gap of the discharge electrode is formed by laser cutting. In this case, the low heat-resistant insulating layer is easier to cut. Thereby, it is possible to form a narrow and deep gap, and the discharge start voltage is low, and dust such as a conductive substance is not easily accumulated, and the discharge start voltage can be reduced in voltage and extended in life at the same time. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It is also an object of the present invention to provide a wafer-type surge absorber that can achieve both a reduction in discharge start voltage and a long life. In order to achieve the above-mentioned object, the present invention is a wafer-type surge absorber. A pair of discharge electrodes are formed on a heat-resistant insulating substrate with a small gap therebetween, and an airtight cap that surrounds the small gap in a closed space is Those who are closely attached to the insulating substrate are characterized in that a low heat-resistant insulating layer having at least a lower heat resistance than the insulating substrate is provided between the insulating substrate and the discharge electrode. -16- This paper applies Chinese National Standards (CNS) A4 specification (210 X 297 mm) 478229 A7 B7 V. Description of the invention (14 (please read the notes on the back first and then fill out this page) According to this wafer type surge absorber, between the insulating substrate and the discharge electrode Since the low heat-resistant insulating layer is at least lower in heat resistance than the insulating substrate, the low heat-resistant insulating layer can also be easily cut when the minute gaps of the discharge electrodes are formed by laser cutting. With this, a narrow width and a narrow width can be formed. Deep and small gaps, the discharge start voltage is low, and dust such as conductive materials does not easily accumulate, and it is possible to achieve both a lower voltage and a longer life of the discharge start voltage. In addition, an object of the present invention is to provide a method for manufacturing a wafer-type surge absorber, which can simultaneously reduce the discharge start voltage and extend the life. In order to achieve the above object, a wafer-type surge absorber is provided. The manufacturing method of the device includes the steps of forming a band-shaped low heat-resistant insulating layer having a lower heat resistance than the insulating base on a flat substrate surface of the heat-resistant insulating base, and a band-shaped low heat-resistant insulation. The process of stacking the same strip-shaped conductive film on top of each other and forming a pair of discharge electrodes with laser cutting in a direction orthogonal to the longitudinal direction and separating the low heat-resistant insulating layer with a small interval. The manufacturing method of the wafer-type surge absorber printed by the cooperative is to form a low heat-resistant insulating layer on an insulating substrate. The conductive film laminated on the low heat-resistant insulating layer is laser-cut with the low heat-resistant insulating layer, so Even with a low output laser, it is easy to obtain a wafer with a narrow width and a small gap with the conductive film deep cut low heat-resistant insulating layer. Surge absorber. It is another object of the present invention to provide a wafer-type surge absorber that can not only support low voltage, but also be used for high-frequency circuits. -17- This paper is in accordance with Chinese national standards ( CNS) A4 size (210 X 297 mm) 478229
五、發明說明（ (請先陈讀背面之注意事項再填寫本頁) 爲了達成上述目的，係提供一種晶片型電湧吸收器， 其係在絕緣性基體上.，具有經由放電間隙互相配置成對向 之放電電極，其特__徵爲；具備較絕緣性基體之介電常數爲 大之介電常數之介電質層，在放電間隙至少露出電介質層 之一部。 若依據此晶片型電湧吸收器時，絕緣性基體與形成於 其上之各個放電電極之間，因具有較絕緣性基體之介電常 數爲高之電介質層爲露出於裝設於放電間隙，所以，施加 電湧電壓時，經由放電電極而電場爲集中於介電質層，從 接觸於兩電介質層之電極進行釋出電場電子。因此，可在 放電電極間以低電壓進行初期電子放電，所以不會如以往 受到放電電極之功函數或氣體之材質之制約，即使於低電 壓也確實地動作。並且，電介質層係可露出於放電間隙， 亦即，只要裝.設在絕緣性基體上與放電電極所對應部位即 可，也不會增大全體靜電電容之虞，所以也可使用於高頻 率電路。 經濟部智慧財產局員工消費合作社印製 【實施例之詳細說明】 【第1實施例】 茲依據第1圖就關於本發明之第1實施例之晶片型電 湧吸收器與其製造方法說明如下。 關於本實施例之晶片型電湧吸收器1 〇，係如第1圖 (b )所示，具有：直方體狀之絕緣性基體1 1、與連同 絕緣性基體1 1形成塡充有放電氣體之箱狀氣密室1 8之 -18- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（铋 請 先 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 底面開口之絕緣性氣密帽蓋1 3、與設於氣密室1 8兩端 部之端子電極1 4、與導通端子電極1 4在氣密室1 8內 形成放電間隙1 7 ~而設之1對放電電極1 2。在放電電極 1 2係於端子電極1 4之連接部，設有爲了擴大連接面積 之連接面1 6。 構成爲如此之晶片型電湧吸收器1 0係製造成如下。 首先，如第1 ( b )圖所示，將絕緣體片7分割爲複數， 以得到絕緣性基體1 1。絕緣體片7雖然可使用市售者， 也可燒成製作既定組成之印刷電路基板（green sheet )。 作爲本實施例所用之絕緣性基體1 1，從耐熱性及強 度上可使用陶瓷或玻璃。尤其多鋁紅柱石（mullhe )、氧 化鋁基板係從熔點、強度、價格等上可較佳地使用。 經濟部智慧財產局員工消費合作社印製 絕緣體片7之分割，係藉形成在絕緣體片7之放電電 極1. 2之面形成分割溝8、9進行。於此，一方向之分割 係爲了使分割容易可採取所需之任意形狀。但是，另一方 之分割溝9，藉形成絕緣性基體1 1之連接面1 6，所以 使放電電極1 2容易形成成爲V字狀或近於此之形狀。這 些分割溝8、9係藉將印刷電路基板押壓既定之模即可形 成。 分割溝8、9之深度雖然依晶片型電湧吸收器1 0本 身大小而異，但是〇 · 6 m m以下爲佳，寬度係1 · 2 m m以下較佳。若此寬度變大時氣密室1 8之容積會變小 所致。按，於本實施例，V字狀之分割溝9，係將深度定 爲0 · 2mm、寬度定爲0 · 4mm。因此，形成於連接 -19- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 _ B7 五、發明說明（0 請 先 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 面1 6之放電電極1 2長度係變成0 . 3 m m弱，與端子 電極1 4將在寬廣面積重疊，兩電極間之導通將被充分確 保。按，連接面Γ—6並不只是在絕緣性基體1 1，也可設 於氣密帽蓋1 3。 接著，形成成爲放電電極1 2之厚度1 # m之導電性 膜。放電電極1 2以1對寬廣線狀形成於連接面1 6。放 電電極12係使用Ru〇2、Ti 、Ti〇、TiN、V. Description of the invention ((Please read the precautions on the back before filling this page) In order to achieve the above purpose, a wafer-type surge absorber is provided on the insulating substrate. The opposite discharge electrode has the following characteristics: a dielectric layer with a dielectric constant larger than that of the insulating substrate, and at least a portion of the dielectric layer is exposed in the discharge gap. In a surge absorber, a dielectric layer having a higher dielectric constant than that of the insulating substrate is exposed between the insulating substrate and the respective discharge electrodes formed thereon. Therefore, a surge is applied. At the time of voltage, the electric field via the discharge electrode is concentrated in the dielectric layer, and electric field electrons are released from the electrodes in contact with the two dielectric layers. Therefore, the initial electron discharge can be performed at a low voltage between the discharge electrodes, so it will not be as usual. Restricted by the work function of the discharge electrode or the material of the gas, it operates reliably even at low voltages. Also, the dielectric layer can be exposed in the discharge gap, that is, It should be installed on the insulating substrate and the corresponding position of the discharge electrode, and it will not increase the overall electrostatic capacitance, so it can also be used in high-frequency circuits. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [implementation] Detailed description of the example] [First Embodiment] A wafer-type surge absorber and a method for manufacturing the wafer-type surge absorber according to the first embodiment of the present invention are described below with reference to FIG. 1. About the wafer-type surge absorber 1 of this embodiment 〇, as shown in Fig. 1 (b), it has a rectangular parallelepiped insulating base 1 1 and a box-shaped airtight chamber 18 filled with a discharge gas formed with the insulating base 11 1- Paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (Please read the notes on the back of bismuth before filling in the insulating airtight cap on the bottom of this page 1 3 A discharge gap 1 7 is formed between the terminal electrode 14 provided at both ends of the airtight chamber 1 8 and the conduction terminal electrode 14 within the airtight chamber 18. A pair of discharge electrodes 12 are provided. At the connection part of the terminal electrode 14, A connection surface 16 is provided to increase the connection area. The wafer-type surge absorber 10 configured as described above is manufactured as follows. First, as shown in FIG. 1 (b), the insulator sheet 7 is divided into a plurality of An insulating substrate 11 is obtained. Although a commercially available insulator sheet 7 can be used, a printed circuit board (green sheet) having a predetermined composition can also be fired. As the insulating substrate 11 used in this embodiment, heat resistance and strength Ceramics or glass can be used on it. In particular, many mullite and alumina substrates can be better used in terms of melting point, strength, price, etc. The division of the insulator sheet 7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, It is performed by forming the division grooves 8 and 9 on the surface of the discharge electrode 1.2 of the insulator sheet 7. Here, the division in one direction is to take any desired shape for easy division. However, the other division groove 9 forms the connection surface 16 of the insulating substrate 11 so that the discharge electrode 12 can be easily formed into a V shape or a shape close to this. These division grooves 8 and 9 can be formed by pressing a printed circuit board to a predetermined mold. Although the depths of the dividing grooves 8 and 9 vary depending on the size of the wafer-type surge absorber 10, the depth is preferably 0.6 mm or less, and the width is preferably 1 mm or less. If this width becomes larger, the volume of the airtight chamber 18 will become smaller. According to this embodiment, the V-shaped dividing groove 9 has a depth of 0 · 2 mm and a width of 0 · 4 mm. Therefore, formed in the connection -19- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 _ B7 V. Description of the invention (0 Please read the precautions on the back before filling out this page 1 6 The length of the discharge electrode 12 becomes 0.3 mm, and it will overlap with the terminal electrode 14 over a wide area, and the conduction between the two electrodes will be fully ensured. Press, the connection surface Γ-6 is not only on the insulating substrate 1. 1, or it can be provided in the airtight cap 1 3. Next, a conductive film having a thickness of 1 # m which becomes the discharge electrode 12 is formed. The discharge electrode 12 is formed on the connection surface 16 in a pair of broad lines. The discharge electrode 12 series uses Ru〇2, Ti, Ti〇, TiN,
Ta、W、SiC、Sn〇2、BaAl、Si、C、Ta, W, SiC, Sn〇2, BaAl, Si, C,
Pd、Pt、Au、Ag'V、Al、La、Nb 等 1 種 或2種以上，而使用印刷法、澱極法、噴濺法等形成。接. 著’將導電性膜之中間方法使用雷射切斷，以形成放電間 隙1 7。放電間隙1 7之寬度，係定爲從1 // m到5 0 0 # m之間。 經濟部智慧財產局員工消費合作社印製 接著，將氣密帽蓋1 3覆蓋於絕緣性基體1 1上。氣 密帽蓋1 3係如形成於箱狀氣密室1 8覆蓋，在絕緣性基 體1 1與氣密帽蓋1 3之接著，雖然使用玻璃漿。按，氣 密帽蓋1 3也可使用與絕緣性基體1 1同樣材料製作。又 ’氣密帽蓋1 3與絕緣性基體1 1之接著，爲了對於箱狀 氣密室1 8塡充放電氣體，在放電氣體之環境中進行。 作爲放電氣體，只要是在高溫會離子化時則包含空氣 可使用種種氣體，但是因考慮在高溫之安定性等時，則可 較佳地使用 He、Ar、Xe、Ne、SF6、C〇2、 C 2 F 6之1種或2種以上之混合物。 黏著氣密帽蓋1 3與絕緣性基體1 1之後，將絕緣體 -20- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（1$ 片7沿著上述分割溝8、9分割。 ·(請先閱讀背面之注意事項再填寫本頁) 分割絕緣體片7之後，形成端子電極1 4。端子電極 1 4係浸漬於金屬骤之方法等，至少在絕緣性基體1 1端 面，附著於氣密帽蓋1 3端面，並且，也塡充於連接面 1 6。藉像這樣形成端子電極1 4 ’就可確保放電電極 1 2及與外部電路之導電。端子電極1 4係因牢固地固定 於絕緣性基體1 1及氣密帽蓋1 3，不只是端面如第1 ( b )圖所示繞至端部形成較佳。 於端子電極1 4，可較佳地使用A g、P t、A u、 Pd、Sn、N i等之1種或2種以上之合金。 燒成端子電極1 4加以固定，以結束晶片型電湧吸收 器1 0之製作。 經濟部智慧財產局員工消費合作社印製 構成爲如此之晶片型電湧吸收器1 0，放電電極1 2 延伸到連接面1 6，因在連接面1 6與端子電極1 4重疊 導通，所以可確保充分之導通。因此，可將氣密帽蓋1 3 端部變成與絕緣性基體1 1端部同一位置，所以氣密室 1 8之分量變大，而增加電湧耐量。又，晶片型電湧吸收 器1 0係成上下對稱形狀，所以安裝於基板時不必區別上 下方向。 茲進行了關於本實施例與晶片型電湧吸收器1 0，與 習知晶片型電湧吸收器之性能比較測試。茲於下面表示其 結果。 以關於上述本發明之製造方法，在絕緣片使用1 2 8 mmx6 4mmx〇 · 5mm之多鋁紅柱石製作了關於本 -21 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 478229 A7 B7 五、發明說明（榨 發明之晶片型電湧吸收器，作爲其實施例1。 於此晶片型電湧吸收器，在絕緣性基體，使用了分割 上述絕緣體片之3 — · 2 m m X 1 · 6 m m X 0 · 5 m m之 基體。 按，放電電極爲T i N膜而厚度爲1 // m，寬度 3 Ο Ο // m，放電間隙之寬度爲3 Ο // m。 氣密帽蓋爲多鋁紅柱石製，外部尺寸爲3 · 2 m m x 1 · 6mmxl · 1mm，內部尺寸爲 2 · 4mmx Ο . 8mmx〇 · 8mm。又，端子電極係使用 A g/P d合金，放電氣體則使用氬氣。 並且，將第1 4圖所示之晶片型電湧吸收器1 5 0作 爲比較例1。 於此晶片型電湧吸收器，將氣密帽蓋之尺寸，成爲外 部尺寸爲2 .Ominxl · 4mmxl · 1mm，內部尺 寸爲1 · 2mmx〇 · 6mmx〇 · 8mm，形成於放電 極成爲3 Ο 0 寬之一對，除了形成放電電極之面相反 面設分割溝以外與實施例1成爲相同條件。 分別使用上述實施例1及比較例1之晶片型電湧吸收 器各個1 0 0個，進行電湧耐量之測試。 其結果，電湧耐量係曉得了於平均實施例之電湧量爲 較習知之晶片型電湧吸收器之電湧耐量爲大。 [第2實施例】 茲參照第2圖就關於本發明之第2實施例之晶片型電 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -22- ------.-----—------1---------^ ·(請先路讀背面之注意事項再填寫本頁) 478229 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（2]D 湧吸收器與其製造方法說明如下。於此’關於本實施例之 晶片型電湧吸收器2 0，與關於第1實施例之晶片型電湧 吸收器1 〇及其製ϋ方法所用之構件相同或相同符號使用 相同符號表示，而省略其說明。關於本實施例之晶片型電 湧吸收器2 0，係如第2 ( b )圖所示，具有··直方體狀 之絕緣性基體1 1、與連同絕緣性基體1 1形成塡充放電 氣體之箱狀氣密室1 8之底面開口之絕緣性氣密帽蓋1 3 、與設於氣密室1 8兩端部之端子電極1 4、與導通端子 電極1 4，在氣密室1 8內形成放電間隙1 7所裝設之2 至5對之放電電極1 2。在放電電極1 2與端子電極1 4 之連接部，設有擴大連接面積所用之連接面1 6。 構成爲如此之晶片型電湧吸收器2 0，與第一實施例 所示晶片型電湧吸收器1 0約略同樣之製造方法製造，形 成欲成爲放電電極1 2之導電性膜時，將放電電極1 2成 爲2至5對之廣寬寬線狀，也將此放電電極1 2形成於連 接面製造。線狀之寬度及線狀間之間隔，係將由絕緣性基 體1 1之寬度或線狀之支數所限定。形成放電電極1 2對 之數目之上限所以限定爲5對，係因爲超過此數目也不能 提高效果。 構成爲如此之晶片型電湧吸收器2 0，係放電電極 1 2爲延伸到連接面1 6，因在連接面1 6與端子電極 1 4重疊導通，所以，可確保充分之導通。因此，可將氣 密帽蓋1 3端部成爲與絕緣性基體1 1端部同一位置，所 以，氣密室1 8其分量變大，而會增加電湧耐量。又，放 一請先閱讀背面之注意事項再填寫本頁) -丨裝i 訂-' --線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -23- 478229 A7 B7 五、發明說明（2)1 (請先fe讀背面之注意事項再填寫本頁) 電電極1 2與端子電極1 4間之導通，即使增加放電電極 1 2之對也同樣被確保。並且，關於本實施側之晶片型電 湧吸收器2 0，因1放電電極1 2成爲2至5對，在放電 電極1 2間可形成複數之電場集中點，在施加電湧時可順 利地觸發不會發生放電延遲。 並且，關於本實施例之晶片型電湧吸收器2 0，因係 成上下對稱狀，所以安裝基板時就不必區別其上下方向。 於是，關於本實施例係與晶片型電湧吸收器2 0，.與 以往之晶片型電湧吸收器進行性能比較。 由關於上述本實施例之製造方法，對於絕緣體片使用 128mmx64mmx〇 · 5mm之多鋁紅柱石製作將 關於本發明之晶片型電湧吸收器’作爲實施例2。 於此晶片型電湧吸收器，在絕緣性基體係使用分割上 述絕緣片之3 · 2 m m X 1 · 6 m m X 〇 · 5 m m之基體 〇 經濟部智慧財產局員工消費合作社印製 按，在放電電極係T i N膜將厚度1 // m，將1 0 0 // m寬度者形成3對，對間之間隔分別定爲5 Ο // m。又 ，放電間隙之寬度定爲3 0 // m。 氣密帽蓋係多鋁紅柱石製，成爲外部尺寸爲3 · 2 mmxl · 6mmxl · 1mm，內部尺寸爲 2 · 4mm 父〇.8 111111/〇.8 111111。又，端子電極使用 A g/P d合金、放電氣體使用氬氣、放電氣體之塡充壓 定爲 6 · 65xl〇4Pa。 並且，如第1 4圖所示，將晶片型電湧吸收器1 5 0 -24- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 ______ B7 五、發明說明（2》 作爲比較例。 ΐ請先閲讀背面之注意事項再填寫本頁) 於此，晶片型電湧吸收器，將氣密帽蓋之大小，成爲 外部尺寸爲2 · CTm m X 1 . 4 m m X 1 · 1 m m，內部 尺寸爲1 · 2mmx〇 · 6mmx〇 · 8mrn，將放電電 極成爲3 Ο Ο // m寬度之1對，除了將分割溝設於形成處 所之放電電極之面相反面之外成爲與實施例2同樣之條件 〇 又，將氣密帽蓋之大小成爲與實施例2相同之尺寸， 將端子電極與實施例2同樣方法形成以外與比較例同樣之 條件製作晶片型電湧吸收器作爲比較例3。 並且，將放電電極，成爲3 0 0 //m寬度之1對之外 ，與實施例2同樣之條件製作晶片型電湧吸收器作爲比較 例4。 並且，於第一實驗，係使用實施例2及比較例2之晶 片型電湧吸收器各使用1 0 0個，進行電湧耐量之測定。 其結果，電湧耐量係平均於實施例爲3 Ο Ο A、比較 例爲5 Ο A，可知關於本實施例之晶片型電湧吸收器之電 湧耐量爲大。 . 經濟部智慧財產局員工消費合作社印製 第二實驗，係使用實施例2、比較例3及比較例4之 晶片型電湧吸收器各種1 0個，施加1 . 2 / 5 0 // s ， 5 Ο Ο V測定了放電開始時間之測定。 其結果，實施例2係0 · 5 // s、比較例3係2 // s 、比較例4係2 // s，可知關於本實施例之晶片型電湧吸 收器之放電開始時間爲較比較例更短。按，於比較例3之 -25- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 _____ B7 五、發明說明（2¾ 晶片型電湧吸收器，不放電者有3個，認爲端子電極與放 電電極之間有接觸不良。 t請先¾讀背面之注意事項再填寫本頁) 【第3實施例】 茲依據第3圖及第4圖就關於本發明之第3實施例之 晶片型電湧吸收器說明如下。第3圖係表示關於本實施例 之晶片型電湧吸收器一實施例之全體斜視圖。第4圖係其 縱截面圖。於此，關於本實施例之晶片型電湧吸收器3 0 ，關於與第1或第2實施例之晶片型電湧吸收器及使用於 其製造之構件同一或同樣之構件使用相同符號標示而省略 其說明。 關於本實施例之晶片型電湧吸收器3 0，係在氧化鋁 等所成之絕緣性基體1 1上形成放電電極1 2 a、12b ，在其放電電極1 2 a與放電電極1 2 b之間以既定尺寸 形成有放電間隙1 7。 經濟部智慧財產局員工消費合作社印製 又，在具有放電電極1 2 a、1 2 b及放電間隙1 7 之絕緣性基體1 1上，如第3圖所示，可保持絕緣被著有 玻璃製之氣密帽蓋1 3。此氣密帽蓋1 3係在絕緣性基體 1 1外周部，同樣作爲絕緣性接著劑使用玻璃製之接著劑 安裝，以屬於其內部空間之氣密室1 8被密封成放電電極 1 2 a，1 2 b及放電間隙1 7不會暴露於氣體環境。 另者，放電電極1 2 a、1 2 b外部端，係如第4圖 所示，經由絕緣性基體1 1及氣密帽蓋1 3接著部1 9延 到此等之外端面，連接於被覆絕緣性基體1 1及氣密帽蓋 本ϋ張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） :26二 478229 A7 B7One or two or more of Pd, Pt, Au, Ag'V, Al, La, Nb and the like are formed using a printing method, a deposition method, a sputtering method, or the like. Next, the intermediate method of cutting the conductive film is laser cut to form a discharge gap 17. The width of the discharge gap 17 is set from 1 // m to 5 0 0 # m. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Next, the air-tight cap 13 is covered on the insulating substrate 11. The air-tight cap 13 is formed as a box-shaped air-tight chamber 18 to cover, and the insulating substrate 11 and the air-tight cap 13 are connected, although glass frit is used. Alternatively, the airtight cap 1 3 may be made of the same material as the insulating base 11. In addition, the gas-tight cap 13 and the insulating substrate 11 are connected in order to charge and discharge a discharge gas into the box-shaped airtight chamber 18 in an environment of a discharge gas. As the discharge gas, as long as it is ionized at a high temperature, various gases can be used including air. However, in consideration of stability at high temperatures, He, Ar, Xe, Ne, SF6, and Co2 can be preferably used. 1 or 2 or more of C 2 F 6 After the air-tight cap 1 3 and the insulating base 11 are adhered, the insulator -20 will be applied to the paper size of China National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (1 $ pieces) 7 Divide along the above-mentioned dividing grooves 8 and 9. · (Please read the precautions on the back before filling this page) After dividing the insulator sheet 7, the terminal electrode 1 4 is formed. The terminal electrode 1 4 is a method of immersion in a metal step, etc. At least the end surface of the insulating substrate 11 is attached to the end surface of the airtight cap 13 and is also filled on the connection surface 16. By forming the terminal electrode 1 4 ′ like this, the discharge electrode 12 and the external circuit can be secured. The terminal electrode 14 is firmly fixed to the insulating substrate 11 and the air-tight cap 13, and it is not only the end surface that is wound around the end as shown in Fig. 1 (b). It is better to form the terminal electrode 1. 4. One or more alloys of Ag, Pt, Au, Pd, Sn, Ni, etc. can be preferably used. The firing terminal electrode 14 is fixed to complete the wafer-type surge absorber. The production of 10. The Intellectual Property Bureau of the Ministry of Economic Affairs printed a chip-type electric device that was composed of consumer cooperatives. The surge absorber 10 and the discharge electrode 12 extend to the connection surface 16. Since the connection surface 16 and the terminal electrode 14 overlap and conduct, sufficient conduction can be ensured. Therefore, the airtight cap 1 3 can be connected to the end Since it is the same position as the end of the insulating substrate 11, the volume of the airtight chamber 18 is increased, and the surge resistance is increased. Moreover, the wafer-type surge absorber 10 is vertically symmetrical, so it is not necessary to mount it on a substrate. The vertical direction is distinguished. The performance comparison test between this embodiment and the wafer-type surge absorber 10 and the conventional wafer-type surge absorber was performed. The results are shown below. The manufacturing method of the present invention is described below. In the insulating sheet, mullite was used as much as 1 2 8 mm x 6 4 mm x 0.5 mm. About this -21-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Employees of Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative 478229 A7 B7 V. Description of the Invention (The wafer-type surge absorber that was invented as its Example 1. Here, the wafer-type surge absorber uses an insulating substrate to divide the above-mentioned insulator sheet. 3 — · 2 mm X 1 · 6 mm X 0 · 5 mm. Press, the discharge electrode is a T i N film with a thickness of 1 // m, a width of 3 Ο Ο // m, and a width of the discharge gap of 3 Ο // m. The airtight cap is made of polyalusite, the external dimensions are 3 · 2 mmx 1 · 6mmxl · 1mm, and the internal dimensions are 2 · 4mmx 〇. 8mmx〇 · 8mm. In addition, the terminal electrode system uses A g / For P d alloy, argon is used as the discharge gas. A wafer-type surge absorber 150 shown in Fig. 14 is used as Comparative Example 1. In this wafer-type surge absorber, the size of the airtight cap is changed to 2.0 mmxl · 4mmxl · 1mm, and the internal size is 1 · 2mmx 0 · 6mmx 0 · 8mm. It is formed on the discharge electrode to become 3 0 0 The pair of widths is the same as that of Example 1 except that a division groove is provided on the opposite side of the surface on which the discharge electrodes are formed. Each of the wafer-type surge absorbers of Example 1 and Comparative Example 1 mentioned above was used for the surge resistance test. As a result, it is known that the surge capacity in the average embodiment is larger than that of the conventional wafer-type surge absorber. [Second Embodiment] With reference to Fig. 2, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied to the wafer-type electric paper size of the second embodiment of the present invention -22- ---- --.------------- 1 --------- ^ (Please read the notes on the back before filling this page) 478229 A7 B7 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by a consumer cooperative V. Description of the invention (2) The D surge absorber and its manufacturing method are described below. Here, 'about the wafer-type surge absorber 20 of this embodiment, and about the wafer-type surge absorber of the first embodiment. The same components or the same symbols used in the device 10 and its manufacturing method are denoted by the same symbols, and descriptions thereof are omitted. The wafer-type surge absorber 20 of this embodiment is shown in FIG. 2 (b), Has a cuboid-shaped insulating base 1 1 and an insulating air-tight cap 1 3 which is opened on the bottom surface of the box-shaped air-tight chamber 1 8 that forms a charge-discharge gas with the insulating base 11 1, and is provided in the air-tight chamber 1 8 Terminal electrodes 14 at both ends, and conductive terminal electrodes 1 4 to form a discharge gap in the airtight chamber 1 8 2 to 5 pairs of discharges installed in 7 Electrode 12 2. A connection surface 16 for expanding the connection area is provided at the connection portion between the discharge electrode 12 and the terminal electrode 14. The wafer-type surge absorber 20 configured as described above is shown in the first embodiment. The wafer-type surge absorber 10 is manufactured by about the same manufacturing method. When forming a conductive film to be the discharge electrode 12, the discharge electrode 12 is formed into a wide and wide line of 2 to 5 pairs, and this discharge electrode is also used. 12 is formed on the connection surface. The width of the linear shape and the interval between the linear shapes are limited by the width of the insulating substrate 11 or the number of linear shapes. The upper limit of the number of pairs of discharge electrodes 12 is limited to 5 pairs, because the number exceeds this number, the effect cannot be improved. The wafer-type surge absorber 20 is configured as above, and the discharge electrode 12 is extended to the connection surface 16 because the connection surface 16 and the terminal electrode 1 4 The overlap is conducted, so that sufficient conduction can be ensured. Therefore, the end portion of the airtight cap 13 can be positioned at the same position as the end of the insulating base 1 1. Therefore, the component of the airtight chamber 18 becomes larger, which increases electricity. Surge tolerance. Also, please read the note on the back first Please fill in this page again for matters)-丨 I-book- '--line · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -23- 478229 A7 B7 V. Description of Invention (2) 1 (Please read the precautions on the back before filling in this page.) The electrical connection between the electric electrode 12 and the terminal electrode 14 is ensured even if the pair of discharge electrodes 12 is added. In addition, regarding the wafer-type surge absorber 20 of this implementation side, since one discharge electrode 12 has two to five pairs, a plurality of electric field concentration points can be formed between the discharge electrodes 12 and smoothly when a surge is applied. There is no discharge delay for the trigger. Further, the wafer-type surge absorber 20 of this embodiment is vertically symmetrical, so it is not necessary to distinguish the vertical direction when mounting the substrate. Therefore, the performance of this embodiment is compared with that of a wafer-type surge absorber 20 and a conventional wafer-type surge absorber. The wafer-type surge absorber 'according to the present invention was used as the second embodiment in the manufacturing method of the present embodiment described above, using an mullite as much as 128 mm x 64 mm x 0.5 mm for the insulator sheet. In this wafer-type surge absorber, a 3 · 2 mm X 1 · 6 mm X 〇 · 5 mm base that divides the above-mentioned insulating sheet is used in an insulating base system. It is printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The discharge electrode system T i N film will have a thickness of 1 // m, and a width of 1 0 0 // m will be formed into 3 pairs, and the interval between the pairs will be set to 5 0 // m, respectively. In addition, the width of the discharge gap is set to 3 0 // m. The airtight cap is made of polyalusite and has an outer dimension of 3 · 2 mmxl · 6mmxl · 1mm and an inner dimension of 2 · 4mm. Parental 0.88111111 / 〇.8 111111. An Ag / Pd alloy was used as the terminal electrode, argon gas was used as the discharge gas, and the compression pressure of the discharge gas was set to 6 · 65 × 104 Pa. And, as shown in Figure 14, the wafer-type surge absorber 15 0 -24- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 ______ B7 V. Description of the invention (2 "as a comparative example. Ϊ́ Please read the precautions on the back before filling out this page.) Here, the chip-type surge absorber will be the size of the airtight cap to 2 · CTm m X 1.4 mm X 1 · 1 mm, the internal dimensions are 1 · 2mmx 0 · 6mmx 0 · 8mrn, the discharge electrodes are made into a pair of 3 〇 〇 // m width, except that the dividing groove is provided on the opposite side of the discharge electrode forming the space The conditions were the same as those of Example 2 except that the size of the airtight cap was the same as that of Example 2, and the terminal electrodes were formed in the same manner as in Example 2 except that the wafer type surge was produced under the same conditions as in Comparative Example. The absorber was used as Comparative Example 3. In addition, a wafer-type surge absorber was fabricated as Comparative Example 4 with the discharge electrodes having a width other than one pair of 3 0 // m, under the same conditions as in Example 2. In the first experiment, 100 wafer-type surge absorbers were used in Example 2 and Comparative Example 2 to measure surge resistance. As a result, the surge withstand capacity was averaged at 3 OO A in the example and 50 Å in the comparative example. It can be seen that the surge resistance of the wafer-type surge absorber of this embodiment is large. . The second experiment printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, using 10 wafer-type surge absorbers of Example 2, Comparative Example 3, and Comparative Example 4, applying 1.2 / 5 0 // s , 5 Ο Ο V measured the discharge start time. As a result, Example 2 is 0 · 5 // s, Comparative Example 3 is 2 // s, and Comparative Example 4 is 2 // s. It can be seen that the discharge start time of the wafer-type surge absorber of this example is relatively small. The comparative example is shorter. According to -25 of Comparative Example 3- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 _____ B7 V. Description of the invention (2¾ wafer type surge absorber, non-dischargers have 3 It is considered that there is a poor contact between the terminal electrode and the discharge electrode. TPlease read the precautions on the back before filling in this page) [Third embodiment] The third embodiment of the present invention is based on Figs. 3 and 4. The wafer-type surge absorber of the third embodiment is described below. Fig. 3 is an overall perspective view showing an embodiment of the wafer-type surge absorber according to this embodiment. Fig. 4 is a longitudinal sectional view thereof. Here, regarding the wafer-type surge absorber 30 of this embodiment, the same or the same components as those of the wafer-type surge absorber of the first or second embodiment and the components used for manufacturing are designated by the same symbols, and The description is omitted. Regarding the wafer-type surge absorber 30 of this embodiment, the discharge electrodes 1 2 a and 12 b are formed on an insulating substrate 11 made of alumina or the like, and the discharge electrodes 1 2 a and 12 2 b Discharge gaps 17 are formed in a predetermined size therebetween. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, on an insulating substrate 11 having discharge electrodes 1 2 a, 1 2 b and a discharge gap 17, as shown in FIG. 3, the insulation can be covered with glass.制 之 气密 盖 盖 1 3． This airtight cap 13 is attached to the outer periphery of the insulating substrate 11 and is also installed as an insulating adhesive using a glass adhesive. The airtight chamber 18 belonging to the internal space is sealed as a discharge electrode 1 2 a. 1 2 b and discharge gap 17 will not be exposed to the gas environment. In addition, the outer ends of the discharge electrodes 1 2 a and 1 2 b are extended to these outer end faces through the insulating base 11 and the airtight cap 1 3 bonding portion 19 as shown in FIG. 4 and are connected to Covered insulating base 1 1 and air-tight cap. The standard dimensions of this cover apply to Chinese National Standard (CNS) A4 (210 X 297 mm): 26 478229 A7 B7
五、發明說明（2X 1 3兩端部之端子電極1 4 a、1 4 b，以構成晶片型電 湧吸收器3 0。 請 先 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 又，於此放電—電極1 2 a、1 2 b，位於絕緣性基體 1 1與氣密帽蓋1 3接著部1 9之基端部3 3、3 4 ’係 具較先端部3 5、3 6電阻値低之材料形成，並且’形成 爲較先端部35、 36厚度更大的厚度，增大其厚度之基 端部3 3、3 4係突出到以氣密帽蓋1 3所圍住之氣密室 1 8內。 形成此放電電極1 2 a、1 2 b時，其先端部3 5、 3 6，係例如噴濺、澱積、或印刷法將鎳等之導電性金屬 塗布形成爲一體帶狀之後，在其鎳部之中途位置照射雷射 光加以切斷，經由放電間隙1 7形成爲互相對向，基端 3 3、3 4係在形成爲那樣之先端部3 5、3 6外端部， 例如藉印刷C u、A 1、A g、A u、P t等値電阻値之 導電性材料形成爲連接狀態。又，厚度係先端部被設定爲 35、36爲2〜2〇//m，基端部33、 34爲被設定 爲 5 〜5 0 // m。 經濟部智慧財產局員工消費合作社印製 構成如上述之晶片型電湧吸收器3 0，係若施加電湧 電壓時’就經由放電間隙1 7在放電電極1 2 a、 12b 先端部3 5、3 6間觸發輝光放電，此放電爲沿面放電形 態伸展至放電電極1 2 a、1 2 b基端部3 3、3 4，在 這些基端部3 3、3 4間藉電弧放電，吸收電湧電壓。 上述放電時，對於放電電極1 2 a、1 2 b基端部 3 3、3 4以點狀態入電弧電流，但是，其部分被形成爲 -27- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（2^ 厚壁，因使電阻値變低，可擴散電弧電流之流動，不僅抑 制電弧電流之流入部分之電流密度變高，並且，可抑制溫 度上升。尤其，gf厚度已增大，成點狀進入之電弧電流爲 邊擴大其進入方向流入，可有效率地加以擴大。 因此，如習知技術可在高溫防止接著劑溶解，可消除 因電湧電壓致使打開玻璃製之氣密帽蓋1 3，其分量可耐 對於電湧電壓之耐久性，並且，可提高耐電湧電壓。 又，於本實施例，係如上述，放電電極1 2 a、12 b基端部3 3、3 4被形成爲厚，如第4圖所示，變成由 氣密帽蓋1 3所圍住之氣密室1 8之狀態，所以，放電時 ，突出於基端部3 3、3 4內端部發生促進電弧放電之作 用，可使電弧放電安定地進行。 蓋因，在放電電極12a、12b基端部33、34 ，使用每單位長度•·單位截面積之電阻値爲〇 · ΙΩ/口 之材料，將寬度成爲0 · 3mm、膜厚成爲20// m製作 晶片電湧吸收器時，可得到2 0 0 A ( 8 / 2 0 A s e c 經濟部智慧財產局員工消費合作社印制衣 )之電湧耐量，又，與以相同電阻値之材料將寬成爲 〇 . 3 m m、將膜厚成爲5 0 // m製作時，就可得到 500A (8/20// s e c)之電湧耐量，與習知品比 較，可大幅度地提昇電湧耐量。 又，因只增大放電電極12a、 12b之一部厚度而 已，所以，以印刷法形成時，就可容易增大其厚度。 按，於本實施例，將放電電極1 2 a、1 2 b端部 3 5、3 6以鎳形成，作爲基端部3 3、3 4雖然例示了 -28- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 _ B7V. Description of the invention (Terminal electrodes 1 4 a, 1 4 b at both ends of 2X 1 3 to form a wafer-type surge absorber 30. Please read the precautions on the back before filling in this page and discharge here— The electrodes 1 2 a and 1 2 b are located at the base end 3, 3 3, 3 4 of the insulating substrate 11 and the airtight cap 1 3, and the resistance is lower than that of the leading end 3 5, 3 6. The material is formed, and is formed into a thickness larger than the thickness of the first end portions 35 and 36, and the base end portion 3, 3, 4 which increases its thickness protrudes to the airtight chamber 1 8 surrounded by the airtight cap 1 3 When the discharge electrodes 1 2 a and 1 2 b are formed, the tip portions 3 5 and 3 6 are formed by, for example, sputtering, deposition, or printing, and coating conductive metal such as nickel into an integrated strip. Laser light is irradiated at the halfway position of the nickel part to cut off, and they are formed to face each other via the discharge gap 17, and the base ends 3 3, 3 4 are formed at the outer ends of the leading ends 3 5, 3 6 such as Conductive materials such as ohmic resistance 印刷 are printed by printing Cu, A1, Ag, Au, and Pt to form a connected state. In addition, the thickness of the tip portion is set to 35 and 36. 2 ~ 2〇 // m, the base end portions 33 and 34 are set to 5 ~ 5 0 // m. The employees' cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a wafer-type surge absorber 30 as described above. When a surge voltage is applied, a glow discharge is triggered between the discharge electrodes 1 2 a and 12 b through the discharge gap 17 between the tip ends 3 5 and 36. This discharge extends to the discharge electrodes 1 2 a and 1 2 b as a surface discharge. The base end portions 3 3, 3 4 absorb electric surge voltage by arc discharge between these base end portions 3 3, 3 4. During the above discharge, the discharge electrode 1 2 a, 1 2 b base end portions 3 3, 3 4 The arc current is applied in a point state, but part of it is formed as -27- This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (2 ^ Because the resistance 値 is reduced, the arc current can be diffused, which not only suppresses the current density of the arc current flowing into the part from increasing, but also suppresses the temperature rise. In particular, the thickness of the gf has increased, and the arc current entering in a point shape is While expanding its inflow direction, it can be expanded efficiently. The known technology can prevent the adhesive from dissolving at high temperature, can eliminate the opening of the airtight cap 13 made of glass due to the surge voltage, and its component can withstand the durability against the surge voltage, and can improve the surge voltage resistance. In this embodiment, as described above, the base ends 3, 3, 4 of the discharge electrodes 12a, 12b are formed thick, as shown in FIG. 4, and become the gas enclosed by the airtight cap 13. The state of the closed chamber 18 is that during discharge, the arc end is protruded from the inner end portions 3, 3 and 3 to promote the arc discharge, and the arc discharge can be performed stably. For the Gein, the base electrodes 33 and 34 of the discharge electrodes 12a and 12b are made of a material having a resistance per unit length of a unit cross-section area of ΩΩ / mouth, a width of 0 · 3mm, and a film thickness of 20 // m When making a chip surge absorber, you can get a surge resistance of 200 A (8/2 0 A sec printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperative Printed Clothing), and it will be wider than a material with the same resistance. When the thickness is 0.3 mm and the film thickness is 50 / m, the surge resistance of 500A (8/20 // sec) can be obtained. Compared with conventional products, the surge resistance can be greatly improved. In addition, since only the thickness of one of the discharge electrodes 12a and 12b is increased, the thickness can be easily increased when formed by a printing method. According to this embodiment, the end portions 3 5 and 36 of the discharge electrodes 1 2 a and 1 2 b are formed of nickel as the base end portions 3 3 and 3 4 although the example -28 is illustrated. (CNS) A4 size (210 X 297 mm) 478229 A7 _ B7
五、發明說明（2]B (請先閱讀背面之注意事項再填寫本頁) 以C u、A 1、A u等材料所形成之例，但是除其之外之 低電阻値材料，例如也可使用T i、W、Μ 〇等形成，依 放電特性適當地選釋即可。 又，在基端部3 3、3 4使用低電阻値材料，並且， 雖然將其厚度成爲較其先端部3 5、3 6爲大，但是因只 要基端部3 3、3 4之電阻値變小即可，所以，可採用減 低材料之固有電阻値（每單位長度•單位截面積之電阻値 )，或增大厚度之任一方之手段。按，增大厚度以外即使 增大寬度電阻値會變低，所以也可以增大厚度或寬度之任 一値。惟，因電弧電流係較厚度方向更容易向寬度方向擴 散，所以，增大厚度者較有效。 其他’氣密帽蓋之材料也成爲玻璃製，但是只要是絕 緣性者，則並非限於玻璃。 〔第4實施例〕 經濟部智慧財產局員工消費合作社印製 茲參照第5圖及第6圖就關於本發明第4實施例之晶 片型電湧吸收器說明如下。第5圖係表示關於本實施例之 晶片型電湧吸收器之製造過程者，（a )係表示構成絕緣 性基體3 9之放電基板3 9 a，（ b )係圖示構成絕緣性 基體3 9之蓋板基板3 9 a，（ c )係表示接著放電基板 3 9 a之狀態，（d )係關於本實施例之晶片型電湧吸收 器之縱截面圖。於此，關於本實施例之晶片型電湧吸收器 4 0，對於關於本實施例之晶片型電湧吸收器4 0，與關 於第1〜第3實施例之晶片型電湧吸收器及其製造所使用 -29- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 478229 A7 _____ B7 五、發明說明（2> 之構件同一或同樣之構件標示相同符號，而省略其說明。 關於本實施例之晶片型電湧吸收器，係具有：貫通在內部 具有空洞之直方體H犬之絕緣性基體3 9，與如封閉在絕緣 性基體3 9兩端所貫通之上述空洞所配置之1對端子電極 1 4、與由絕緣性基體3 9與端子電極1 4所封閉之空洞 封入放電氣體之氣密室1 8，與在氣密室1 8內之絕緣性 基體3 9上一端裝設放電間隙1 7所配置之1對放電電極 1 2。於此’放電電極1 2與端子電極1 4係以電性導通 。並且，在氣密室1 8內之絕緣性基體3 9上之他面，裝 設有中繼與放電電極1 2 a及端子電極1 4所隔離之電弧 放電之中繼電極4 1。 構成爲如此之晶片型電湧吸收器4 0，當繼續時間長 的電湧入侵時，由於端子電極1 4間之電弧放電氣密室 1 8將變成高溫。但是，如本發明放電電極1 2及與端子 電極1 4隔離之位置形成中繼電極4 1時，當電弧放電時 放電之一部就經由中繼電極4 1，在中繼電極4 1與端子 電極1 4之間進行電弧放電。因此，在放電電極1 2間之 放電量就變少，而大幅度地抑制對於放電電極1 2之熱負 荷。其結果，即使因反復施加電湧放電間隙1 7所受到之 損傷就變少，晶片型電湧吸收器4 0之壽命會變長。 又，氣密室1 8內之絕緣性基體3 9之內側端面部， 爲於中繼電極4 1端部與端子電極1 4之間，向內面形成 缺口，擴大放電空間。內側端面部之中繼電極4 1端部與 端子電極1 4間之絕緣性基體3 9，所以向內面形成缺口 , ^ .---------------^---丨 i頁 、 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -30 * 478229 A7 ___ B7 五、發明說明（3办 請 先 閱, 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 爲中繼電極4 1之材質，係使用與放電電極1 2同樣者。 中繼電極4 1係從其旨並不只是溝4 3底部也可形成於側 部。又，形狀也與龙電電極1 2或端子電極1 4之間隔， 爲除非變成太窄可自由地取得。在中繼電極4 1之形成， 可使用印刷法、噴濺法等放電電極之形成相同方法。 茲就關於本實施例之晶片型電湧吸收器4 0依第5圖 製作，所以，將此說明如下。（於此，將此晶片型電湧吸 收器作爲實施例4 a )。按，本實施例係不違反其要旨之 範圍內不受本實施例之拘束。按，於本實施例係作爲晶片 型電湧吸收器3 9使用氧化鋁，端子電極1 4係使用銅， 放電電極1 2及中繼電極4 1係使用Ru〇2。 (1 )在絕緣性基體以印刷法著膜放電電極1 2，使 手雷射切斷此放電電極1 2形成2 0 // m寬之放電間隙 1 7，製作了放電基板3 9 a。放電基板3 9 a之尺寸爲 3 · 2mmxl . 6mmxl · 5mm，放電電極 12 係 長度 1 · 6mm，寬度 〇 · 5 111111，厚度5//111。 經濟部智慧財產局員工消費合作社印製 (2)將確保氣密室18之寬度0.5mm，深度 0 · 2 5 m m之溝4 3形成爲絕緣性基體3 9。接著，在 此溝4 3底部，使用印刷法形成長度2 · 2 m m，寬度 0 · 4 8mm，厚度5 //m之中繼電極4 1，製作了蓋板 基板39b。蓋板基板39b之尺寸爲3 · 2mmx 1 · 6mmx〇 · 5mm〇 (4 )將放電基板3 9 a，與蓋板基板3 9 b使用玻 璃漿4 4接著之後加熱，製作了絕緣性基體3 9。 -33 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（3)1 (請先閱讀背面之注意事項再填寫本頁) (5 )在絕緣性基體兩端面安裝金屬製氣密帽蓋之後 ，加以燒成爲端子電極1 4。此時’如第5 ( d )圖所示 ，爲了使放電電極_1 2與端子電極1 4之導通確實，形成 補助電極4 2之後也可安裝端子電極1 4。 (6 )安裝上述端子電極1 4後之燒成係在1 〇 . 1 X 1 0 4 P a之氬氣流中進行，形成端子電極1 4地同時也 進行了對於氣密室1 8內之放電氣體之封入。 藉此完成了關於本實施例之晶片型電湧吸收器之製造 〇 茲在第6圖，表示有關本實施例之晶片型電湧吸收器 之其他形態例。此晶片型電湧吸收器4 6係於晶片型電湧 吸收器4 6，將絕緣性基體3 9在中繼電極4 1端部與端 子電極1 4之間向內面形成缺口以作爲缺口部4 5以擴大 放電空間。絕緣性基體3 9之缺口係以雷射或分割進行。 經濟部智慧財產局員工消費合作社印制π 此晶片型電湧吸收器4 6係於晶片型電湧吸收器4 6 ，其特徵爲；將絕緣性基體3 9之內側端面部，在中繼電 極4 1端部與端子電極1 4之間形成缺口作爲放電空間。 具體上，係於上述晶片型電湧吸收器4 0之製造方法之中 ，於（3 )階段，形成中繼電極4 1之後，使用雷射，從 中繼電極4 1端部向溝4 3端部將溝4 3 (於第6圖係未 圖示）形成爲深的缺口 4 5，以擴大放電空間（參照第6' 圖）。於本實施例，係在絕緣性基體3 9之端部，將溝 4 3之深度成爲再深0 · 1 m m (於此，將此晶片型電湧 吸收器作爲實施例4 b )。按，若形成有補助電極4 2時 -34- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 i、發明說明（3)2 ，有時補助電極也被形成缺口。 溝4 3係向絕緣性基體3 9之端部變深較佳，但是， 若放電空間被擴大—時，端部即使淺實用上也沒有障礙。 又，將絕緣性基體3 9所以形成缺口’也可以在形成 中繼電極4 1之前。 於此，屬於關於本實施例之晶片型電湧吸收器之實施 例4 a、4 b，與以往之晶片型電湧吸收器進行了比較。 作爲以往之晶片型電湧吸收器，除了在蓋板基板中不 形成中繼電極以外，其他則使用與實施例4 a同樣地製作 之晶片型電湧吸收器（將此作爲比較例5 )。 爲了欲確認在實施例4 a、4 b及比較例5所製作之 晶片型電湧吸收器之壽命特性，進行了以下之測試。按， 測試用之晶片型電湧吸收器之放電間隙之寬度係2 0 // m ’初期.放電開.始電壓係3 Ο Ο V、放電氣體係氬、氣體之 塡充壓係l〇.lxl〇4Pa。 經濟部智慧財產局員工消費合作社印製 將1 5 0 0 p F之電容器以1 OKV之電壓充電之後 ’將此開放施加於各個晶片型電湧吸收器。施加次數爲 1 5 0 0次，中途每5 0 0次測定了放電開始電壓。按， 供試試料係實施例、比較例都定爲7個，而平均7個之測 定値。 茲將其結果表示於第7圖之表。 · 如第7圖所示，於比較例之以往晶片型電湧吸收器係 施加5 0 〇次電湧雖然放電開始電壓爲上升，但是，關於 屬本實施例之晶片型電湧吸收器之實施例4 a，則在 -35- 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 ___B7___ 五、發明說明（3》 1 0 0 0次，於第4實施例4 b即使施加1 5 0 0次之電 湧放電開始電壓都未上升。 (請先閱讀背面之注意事項再填寫本頁) 關於本實施伊Γ之晶片型電湧吸收器，係在放電間隙 1 7對面裝設中繼電極4 1，所以電弧放電時放電之一部 分爲流於中繼電極4 1，在中繼電極4 1與端子電極1 4 之間進行電弧放電，放電電極1 2之熱負擔減少，放電間 隙1 7之熱損傷變少，而延長晶片型電湧吸收器之壽命。 又，藉在中繼電極41與端子電極1 4之間擴大放電 空間，電弧放電就變成容易不僅晶片型電湧吸收器之壽命 延長，同時因電弧放電揮散之金屬蒸氣，藉澱積於絕緣性 基體3 9之端面就可防止晶片型電湧吸收器本身之短路。 〔第5實施例〕 經濟部智慧財產局員工消費合作社印制π 茲參照第8圖及第9圖就關於本發明之第5實施例之 晶片型電湧吸收器與其製造方法說明如下。第8圖係關於 本實施例之晶片型電湧吸收器之要部側面圖。第9圖係第 8圖所示晶片型電湧吸收器平面圖。於此，關於本實施例 之晶片型電湧吸收器5 0，關於第1〜第4實施例之晶片 型電湧吸收器及使用於其製造之構件同一或同樣之構件使 用相同符號表示，而省略其詳細說明。 在具有耐熱性之絕緣性基體1 1上成帶狀設有較絕緣> 性基體1 1其耐熱性低之低耐熱絕緣層5 1，低耐熱絕緣 層5 1係與後述之放電電極一起由放電間隙1 7將長向中 央部分隔爲左右（第8圖之左右）。在低耐熱絕緣層5 1 本紙張尺度適用^國國家標準（CNS)A4規格（210 X 297公釐) -36: ~ 478229 A7 ___B7__ 五、發明說明（3)l· (請先閱讀背面之注意事項再填寫本頁) 上面相隔放電間隙1 7形成有一對放電電極1 2，放電電 極1 2係連同上述低耐熱絕緣層5 1由放電間隙1 7長向 中央部爲被分隔爲+左右。亦即，在絕緣性基體1 1與放電 電極1 2之間，由絕緣性基體1 1設有耐熱性低之低耐熱 絕緣層5 1。 作爲絕緣性基體1 1，係具有絕緣性並且可保持氣密 之材料，例如，可舉出氧化鋁、金剛沙、多鋁紅柱石（ mullite )，及其混合物。作爲低耐熱絕緣層5 1則可良好 地進行雷射切斷之絕緣材料，亦即，光之反射及透過爲少 之而耐熱性弱之絕緣材料，例如可舉出M g〇等。又，作 爲放電電極12則可舉出Ru〇2、Ti 、Ti〇、TiN 、Ta、W、SiC、Sn〇2、BaAl、Nb、Si、 C、Au、Ag、Pt、Pd、La 及其混合物。 .絕緣性基體1 1之基板面爲被形成爲平坦面。低耐熱 絕緣層5 1係被形成於絕緣性基體1 1之平坦基板面。放 電電極1 2係再積層於低耐熱絕緣層5 1上。所以，放電 電極1 2係低耐熱絕緣層5 1之厚度分量，從絕緣性基體 1 1向上方浮上之狀態被配置。 經濟部智慧財產局員工消費合作社印製 按，於此實施形態，放電電極1 2爲低耐熱絕緣層 5 1之厚度分量，被配置於從絕緣性基體1 1浮上位置之 情形爲例說明，但是，若放電電極1 2爲在與絕緣性基體’ 1 1間設有低耐熱絕緣層5 1時，也不必低耐熱絕緣層 5 1之厚度分量浮上配置。此時，在絕緣性基體1 1形成 帶狀之溝，在其溝內埋入低耐熱絕緣層5 1，與絕緣性基 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -37 - 478229 A7 B7 五、發明說明（龙 (請先閱讀背面之注意事項再填寫本頁) 體1 1變成同一平面上之此低耐熱絕緣層5 1上，積層放 電電極1 2即可。成爲這種構成時，就可使切入變深，可 確保後述氣密帽蓋_之密閉空間之容積爲大。 又，放電間隙1 7係至少將放電電極1 2，與將低耐 熱絕緣層5 1形成爲完全分隔。此時，絕緣性基體1 1係 厚度一方之一部分爲也可以由放電電極1 2去除。因此， 放電間隙1 7係放電電極1 2之厚度，與低耐熱絕緣層 5 1之厚度，與絕緣性基體1 1被去除厚度方向之一部分 之總和尺寸以切入形成。 形成低耐熱絕緣層5 1、放電電極1 2之絕緣性基體 1 1上面，與以往同樣之氣密帽蓋1 3爲由接著劑5 2接 著。氣密帽蓋1 3係具有氣密室1 8，在氣密室1 8中央 位有放電間隙1 7，並且，放電電極1 2被接著成兩端從 外部溢出。從氣密帽蓋1 3在所溢出之放電電極1 2兩端 部，使用烘烤、電鍍等連接與以往相同之端子電極1 9 3 (參照第2 0圖）。 茲將構成爲如此之晶片型電湧吸收器5 0之作用說明 如下。 經濟部智慧財產局員工消費合作社印製 晶片型電湧吸收器5 0係在絕緣性基體1 1與放電電 極1 2之間，裝設至少較絕緣性基體1 1耐熱性低之低耐 熱絕緣層5 1 ，放電間隙1 7爲由雷射切斷形成時，低If 熱絕緣層5 1也被形成爲切入。藉此，就可形成窄寬度並 且深的放電間隙1 7，放電開始電壓爲低，並且，導電性 物質等之灰塵就不容易堆積。 -38- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 經濟部智慧財產局員工消費合作社印制取 B7 五、發明說明（3¾ 又，絕緣性基體1 1之平坦基板面上突出低耐熱絕緣 層5 1與放電電極1 2被積層，放電電極1 2連同低耐熱 絕緣層5 1被切入~時，放電間隙1 7爲低耐熱絕緣層5 1 之厚度分量，將被配置於從基板面上向上方離開之位置。 又，由放電間隙1 7切入之低耐熱絕緣層5 1，係切入方 向之兩端在基板表面上開口。藉此，放電間隙1 7雖然爲 窄寬度卻確保兩端之開口，導電性物質等之灰塵就變成容 易排出。 像這樣，若依據上述之晶片型電湧吸收器5 0，可形 成窄寬度且深的放電間隙1 7，降低放電開始電壓，並且 ，可使導電性物質等之灰塵不容易堆積於放電間隙1 7， 可同時達成放電開始電壓之低電壓化與長壽命化。 茲將上述晶片型電湧吸收器5 0之製造方法說明如下 0 製造晶片型電湧吸收器5 0時，在絕緣性基體1 1之 平坦基板上，形成低耐熱絕緣層5 1爲帶狀。 接著，如覆蓋其低耐熱絕緣層5 1，使用印刷法、殿 積法、噴濺法等積層導電膜（放電電極1 2 )。 接著，將導電膜，向長向成直交方向使用雷射切斷， 連同低耐熱絕緣層5 1分隔形成相隔放電間隙1 7之一對 放電電極1 2。按，如上述，也可以同時去除絕緣性基體· 1 1之一部分。 接著，將氣密帽蓋1 3，覆蓋於絕緣性基體1 1上。 氣密帽蓋1 3係在絕緣性基體1 1之間如形成氣密室1 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -39- -----T----ί----Aw------^---------^ I I Aw (‘請先I讀背面之注意事項再填寫本頁) 478229 A7 ___ B7 五、發明說明（贪 覆蓋，與絕緣性基體1 1之接著則使用玻璃漿等之接著劑 5 2° (請先閱讀背面之注意事項再填寫本頁) 氣密帽蓋1 31 系大氣中，或氣體（N2、Ar、Ne、 He、Xe、H2、 SF6、 CF6、 C3F8、 C〇2 及其 混合氣體）中，將所需之氣體閉合於氣密室1 8中密封。 接著氣密帽蓋1 3之後，溢出於氣密帽蓋1 3外部之 放電電極1 2形成未圖示之端子電極（與第2 0圖所示端 子電極1 9 3同樣者）。端子電極係將金屬漿使浸漬法等 附著，形成於絕緣性基體1 1之兩端面，或氣密帽蓋1 3 之兩側面。 最後，燒成端子電極完成晶片型電湧吸收器5 0之製 造。 經濟部智慧財產局員工消費合作社印製 於此晶片型電湧吸收器5 0之製造方法，係在絕緣性 基體1 1上形成低耐熱絕緣層5 1，積層於此低耐熱絕緣 層5 1上之導電膜爲連同低耐熱絕緣層5 1因被雷射切斷 分隔，所以即使使用低輸出之雷射，也可連同導電膜可深 切低耐熱絕緣層5 1，可容易得到窄寬度且具有深的放電 間隙1 7之晶片型電湧吸收器5 0。 茲將上述之晶片型電湧吸收器5 0，實際由上述製造 方法製作，與習知製造方法所製作之比較例之晶片型電湧 吸收器，比較電湧壽命之結果說明如下。 (關於本實施例之晶片型電湧吸收器） •絕緣性基體之大小：3 X 1 · 5 X厚0 · 5 m m -40- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（企 絕緣性基體之材質：氧化鋁基板 低耐熱絕緣層之厚度：1 0 // m 低耐熱絕緣層之材質：M g〇 放電電極之材質：Ti 放電電極之厚度：l//m 放電間隙之寬度：7 // m 放電間隙之切入深度：對於低耐熱絕緣層爲1 0 // m 對於絕緣性基體爲2 // m合計 1 2 // m ) 密封氣體：Ar氣體（封入壓力1 · 〇6xl04P〖 (比較例之晶片型電湧吸收器） •絕緣性基體之大小：3 X 1 · 5 X厚0 . 5 m m •絕緣性基體之材質：氧化鋁基板 •放電電極之厚度：l//m •放電電極之材質：T i •放電間隙之寬度：1 1 // m •放電間隙之切入深度：對於絕緣性基體爲3 // m •密封氣體：Ar氣體（封入壓力1·06xl04P 〔比較結果〕 關於實施例之晶片型電湧吸收器，係放電開始電壓變 成1 5 Ο V，關於電湧壽命特性，係施加波頭長V s，波 尾長2 0 // s，施加電流値5 Ο A之電流波形之電湧進行 ---------------裝_· (請先閱讀背面之注意事項再填寫本頁) 呂丁 線 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -41 · 478229 A7 一 B7 五、發明說明（3)9 壽命測試時，即使施加次數1 0 0 0次以上也保持絕緣電 阻爲1 〇 9 Ω以上。 (請先閱讀背面之注意事項再填寫本頁) 與此相對，比~較例之晶片型電湧吸收器，係在放電間 隙寬度1 0 // m以下時對於絕緣性基體之切入深度爲變成 2 // m以下，發生了短路不良。因此，將放電間隙寬度 1 1 // m，對於絕緣性基體之切入深度定爲3 // m製作晶 片型電湧吸收器時，放電開始電壓係變成1 8 Ο V，關於 電湧壽命特性係進行上述同樣之壽命測試時，在施加次數 1 0 0次以內絕緣電阻爲從1 0 9 Ω降低。 如以上所說明，關於本實施例之晶片型電湧吸收器， 係在絕緣性基體1 1與放電電極1 2之間裝設至少較絕緣 性基體1 1更低之耐熱性之低耐熱絕緣層5 1，所以將放 電電極1 2之微小間隙以雷射切斷形成時，也可以深切低 耐熱絕緣層5. 1。此結果，就可形成窄寬度且微小間隙， 降低放電開始電壓，並且，可使導電性物質等之灰塵變成 不容易堆積，可同時達成放電開始電壓之低電壓化與長壽 命化。 經濟部智慧財產局員工消費合作社印製 〔第6實施例〕 茲參照第1 0圖到第1 2圖就關於本發明之第6實施 例之晶片型電湧吸收器與其製造方法說明如下。第1 0圖 係表示關於本發明之晶片型電湧吸收器之一例全體斜視圖 ，第1 1圖係第1 0圖之縱截面圖，第1 2圖係第1 1圖 之部分放大圖。於此，關於本實施例之晶片型電湧吸收器 -42- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（4)) (請先閱讀背面之注意事項再填寫本頁) 6 0 ’關於第1〜第5實施例之晶片型電湧吸收器6 0及 使用於其製造之構件同一或同樣之構件使用相同符號表示 ，而省略詳細說呢。 如第1 0圖，第1 1圖所示，晶片型電湧吸收器6 0 係具有：由氧化鋁等所成之絕緣性基體1 1，與設於此絕 緣性基體11之放電電極12 a、12b，與在放電電極 1 2 a、1 2 b間以既定尺寸所形成之放電間隙1 7。 如第10圖所示，具有放電電極12a、 12b及放 電間隙1 7之絕緣性基體1 1上，被著有玻璃製（絕緣物 製）之氣密帽蓋1 3。此氣密帽蓋1 3係其周緣部爲在絕 緣性基體1 1外周部使用接著劑被著，在絕緣性基體1 1 與氣密帽蓋1 3之間形成有氣密室1 8。此氣密室1 8係 充滿放電能夠較佳之既定氣體而被密封，配置於氣密室 .18之兩放電電極1 2 a、1 2 b及放電間隙1 7係使其 可暴露於上述既定之氣體環境。 經濟部智慧財產局員工消費合作社印製 如第1 1圖所示，放電電極1 2 a、1 2 b基端部 3 3、3 4，係延伸到絕緣性基體1 1與帽蓋1 3之外端 面，連接於覆蓋這些絕緣.性基體1 1及帽蓋1 3兩端部之 端子電極1 4 a、1 4 b，以構成晶片型電湧吸收器6 〇 。因此，在放電電極12a、 12b基端部33、 34及 絕緣性基體1 1外周部上被著有氣密帽蓋1 3。 在絕緣性基體1 1與放電電極1 2 a、1 2 b各個之 間設有介電質層61、 62。此介電質層61、 62係在 此絕緣性基體1 1上面如包含對應於放電電極1 2 a、 -43- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（4)1 (請先閱讀背面之注意事項再填寫本頁) 1 2 b位置加以積層，而由具有較絕緣性基體1 1之介電 常數値爲2倍以上大的介電常數之材質所形成。此時，介 電質層6 1、6 —部係露出於放電間隙1 7。於本實施 例，作爲絕緣性基體1 1使用氧化鋁基板（介電常數ε r :10左右），介電質層6 1、6 2之介電常數成爲 3 5 0 0 0 ° 欲製造具有以上所說明之晶片型電湧吸收器時，首先 ，在絕緣性基體1 1上使用印刷預先形成介電質層6 1、 62，再在其上重疊使用印刷形成放電電極12a、 12 b。並且，在放電電極1 2 a、1 2 b間藉照射雷射光以 形成放電間隙1 7。此時，介電質層6 1、6 2係藉形成 與其放電間隙1 7同樣之間隙，不會作爲電容器發揮其功 能。 這種晶片型電湧吸收器6 0，係施加電湧電壓時，就 經由放電間隙1 7在放電電極1 2 a、1 2 b之先端部間 觸發輝光放電，此放電就以沿面放電之形態伸展到放電電 極12a、12b基端部33、34，在這些基端部33 、3 4間藉電弧放電，吸收電湧電壓（參照第1 6圖）。 經濟部智慧財產局員工消費合作社印製 於上述放電時，在絕緣性基體1 1與放電電極1 2 a 、1 2 b各個之間，因設有比絕緣性基體1 1之介電常數 具較高之介電常數之介電質層61、 62，所以，施加電 湧電壓時，就經由放電電極1 2 a、1 2 b電場就集中於 介電質層61、 62，從接觸於兩介電質層61、 62之 放電電極12a、12b進行電場電子之釋出。因此，在 -44- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 B7 五、發明說明（砟 放電電極1 2 a、1 2 b間以低電壓就可進行初期電子放 電，不會受到如以往之放電電極1 2 a、1 2 b間之功函 數或氣體材質之製^約，即使低電壓也可確實地動作。 並且，在絕緣性基體1 1上只有與放電電極1 2 a、 1 2 b相對應部位設介電質層6 1、6 2即可，因在此介 電質層6 1、6 2也設有間隙，全體之靜電電容未增大之 虞，所以也可使用於高頻率電路。並且，也只有在絕緣性 基體11與放電電極12 a、12b間裝設介電質層6 1 、6 2，所以，與如曰本專利特開平2 0 0 0 -1 2 1 8 6號公報所示之晶片型電湧吸收器之C V D法或 淤漿法等所形成鑽石作比較，可容易形成。 按，於本實施例，作爲絕緣性基體1 1使用氧化鋁基 板，對此將介電常數爲3500之介電質層61、 62形 成5 //m之厚度，並且將由B a A 1所成之放電電極1 2 a、12b以l〇//m形成，設寬度20//m且深度20 // m之放電間隙1 7製作晶片型電湧吸收器時，可成爲靜 電電容爲1 p F以下，而將直流放電開始電壓變成爲 經濟部智慧財產局員工消費合作社印製 1 0 0 V。 作爲比較例6，使用與上述相同尺寸之氧化鋁基板， 放電電極製作未具有介電質層61、 62之晶片型電湧吸 收器時，即使靜電電容具有1 P F直流放電開始電壓變成 2 0 0 V，又作爲比較例7，將氧化鋁基板置換爲介電常 數ε r爲3500之電介質製作時，靜電電容爲5pF， 而直流放電開始電壓爲1 4 0 V。藉此，設介電質層確認 -45- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（必 了可確實地達成低電壓化。 (請先閱讀背面之注意事項再填寫本頁) 於本實施例，作爲絕緣性基體1 1使用氧化鋁基板之 關係上，雖然表示__了使用介電常數（ε r )爲3 5 0 0之 介電質層6 1、6 2之例，也可以依絕緣性基體1 1之材 料介電常數爲10〜100000之範圍，尤其1000 〜3 0 0 0 0左右較佳。又，也可以作爲介電質層6 1、 6 2之厚度雖然1〜1 0 00 //m左右之厚度，但是電容 上爲1 0〜2 0#m左右較佳。 本發明係並非限定於上述各實施例，而也包含上述各 實施例組合之種種變形例。 圖式之簡單說明 第1 ( a )圖係表示關於本發明第1實施例之晶片型 電湧吸收器及其製造步驟者，而表示絕緣性片與分割數、 放電電極、放電間隙間關係之斜視圖。 第1 ( b )圖係表示關於本發明第1實施例之晶片型 電湧吸收器之完成狀態之透視性斜視圖。 經濟部智慧財產局員工消費合作社印製 第2 ( a )圖係表示關於本發明第2實施例之晶片型 電湧吸收器及其製造步驟者，而表示絕緣性片與分割數、 放電電極、放電間隙間關係之斜視圖。 第2 ( b )圖係表示關於本發明第1實施例之晶片型 電湧吸收器之完成狀態之透視性斜視圖。 第3圖係表示關於本發明第3實施例之晶片型電湧吸 收器之全體斜視圖。 -46- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 478229 A7 B7 五、發明說明（4 第4圖係弟3圖之弟1圖之縱截面圖。 (請先閱讀背面之注意事項再填寫本頁) 第5 ( a )圖係表示關於本發明第4實施例之晶片型 電湧吸收器製造過ϋ之放電基板。 第5 ( b )圖係表示關於本發明第4實施例之晶片型 電湧吸收器製造過程之蓋板基板。 第5 ( c )圖係表示關於本發明第4實施例之晶片型 電湧吸收器接合放電基板與蓋板基板狀態。 第5 ( d )圖係表示關於本發明第4實施例之晶片型 電湧吸收器之縱截面圖。 第6圖係表示關於本發明第4實施例之晶片型電湧吸 收器之其他形態例之縱截面圖。 第7圖係表示關於本發明第4實施例之晶片型電湧吸 收器與習知之晶片型電湧吸收器之壽命特性測定測試結果 之表。. 第8圖係關於本發明第5實施例之晶片型電湧吸收器 之要部側面圖。 第9圖係表示第8圖所示晶片型電湧吸收器之平面圖 〇 經濟部智慧財產局員工消費合作社印制衣 第1 0圖係表示關於本發明第6實施例之晶片型電湧 吸收器之全體斜視圖。 第1 1圖係第1 0圖之縱截面圖。 第1 2圖係第1 1圖之部分放大說明圖。 第1 3圖係表示習知之電湧吸收器。 第1 4圖係表示習知之晶片型電湧吸收器。 •47- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 478229 A7 B7 五、發明說明（非 第1 5 ( a )圖係習知之晶片型電湧吸收器之斜視圖 〇 第1 5 ( b r圖係第1 5 ( a )圖之A — A箭頭符號 圖。 第1 6圖係表示習知晶片型電湧吸收器之縱截面圖。 第1 7圖係表示習知晶片型電湧吸收器之要部側面圖 〇 第1 8圖係第1 7掘所示晶片型電湧吸收器之平面圖 〇 第1 9圖係表示習知之晶片型電湧吸收器之帽蓋接著 工程側面圖。 第2 0圖係表示習知晶片型電湧吸收器側面圖。 0 (請先閱讀背面之注意事項再填寫本頁) -裝 訂： 經濟部智慧財產局員工消費合作社印製 主要元件對照 140 電 湧 吸 收 器 141 圓 柱 型 絕 緣 子 145 散 熱 導 線 143 帽 蓋 電 極 20，10,160，170，150，195 晶 片 型 電 湧 吸收器 151,161 絕 緣 性 基 板 153,185 放 電 間 隙 176,191,156 氣 密 帽 蓋 12,152,183 放 電 電 極 52,187 接 著 劑 丨線· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -48- 478229 A7 _B7 五、發明說明（确 經濟部智慧財產局員工消費合作社印製 41 中繼電極 193 端子電極 189 — 密閉空間 11 絕緣性基體 7 絕緣體片 18 氣密室 13 氣密帽蓋 33,34 基端部 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -49-V. Description of the invention (2) B (Please read the notes on the back before filling in this page) An example formed by materials such as Cu, A1, Au, but other materials with low resistance, such as also It can be formed using T i, W, Mo, etc., and it can be selected as appropriate depending on the discharge characteristics. In addition, the base end portions 3, 3, and 4 are made of a low-resistance rhenium material. 3 5, 3 6 are large, but as long as the resistance 値 of the base end 3 3, 3 4 can be reduced, the inherent resistance 材料 (resistance per unit length and unit cross-sectional area 値) of the material can be reduced. Either means to increase the thickness. Pressing to increase the thickness except the thickness increases the resistance 低, so you can increase either the thickness or the width. However, the arc current is easier than the thickness direction. It spreads in the width direction, so it is effective to increase the thickness. Other 'airtight cap materials are also made of glass, but as long as they are insulating, they are not limited to glass. [Fourth Embodiment] Intellectual Property Bureau, Ministry of Economic Affairs Printed by Employee Consumer Cooperatives with reference to Figure 5 and Fig. 6 illustrates the wafer-type surge absorber of the fourth embodiment of the present invention as follows. Fig. 5 illustrates the manufacturing process of the wafer-type surge absorber of the present embodiment, and (a) illustrates the construction of an insulating substrate. The discharge substrate 3 9 a of 3 9 (b) is a cover substrate 3 9 a, which constitutes an insulating substrate 3 9 (a), (c) indicates a state after the discharge substrate 3 9 a, and (d) is about this embodiment A longitudinal sectional view of the wafer-type surge absorber of the present example. Here, the wafer-type surge absorber 40 of this embodiment, the wafer-type surge absorber 40 of this embodiment, and the first to the first The wafer-type surge absorber of the third embodiment and its manufacturing use -29- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 478229 A7 _____ B7 V. Description of the invention (2 > The components with the same or the same components are marked with the same symbols, and their descriptions are omitted. The wafer-type surge absorber of this embodiment has a cuboid H-dog with a cavity inside. The insulating substrate 3 9 and, as A pair of terminal electrodes 14 arranged in the above-mentioned holes penetrated at both ends of the insulating substrate 39, and a gas-tight chamber 18 in which a discharge gas is sealed in the cavity enclosed by the insulating substrate 39 and the terminal electrode 14 is, and A pair of discharge electrodes 12 arranged in a discharge gap 17 is installed on one end of an insulating substrate 39 in the airtight chamber 18. Here, the discharge electrodes 12 and the terminal electrodes 14 are electrically connected. Also, On the other side of the insulating substrate 39 in the airtight chamber 18, a relay electrode 41 for arc discharge separated by the discharge electrode 12a and the terminal electrode 14 is installed. The wafer is configured as such When the surge intrusion continues for a long time, the air-tight chamber 18 due to the arc discharge between the terminal electrodes 14 will become high temperature. However, when the relay electrode 41 is formed at the position where the discharge electrode 12 and the terminal electrode 14 are isolated from the present invention, when the arc discharges, a part of the discharge passes through the relay electrode 41, and the relay electrode 41 and the terminal An arc discharge is performed between the electrodes 14. Therefore, the amount of discharge between the discharge electrodes 12 is reduced, and the thermal load on the discharge electrodes 12 is significantly suppressed. As a result, even if the damage caused by repeated application of the surge discharge gap 17 is reduced, the lifetime of the wafer-type surge absorber 40 becomes longer. In addition, an inner end surface portion of the insulating substrate 39 in the airtight chamber 18 is formed inwardly between the end portion of the relay electrode 41 and the terminal electrode 14 to expand the discharge space. The insulating substrate 39 between the end portion of the relay electrode 4 1 on the inner end surface and the terminal electrode 14 is formed in the inner surface, ^ .--------------- ^- -丨 i, (Please read the precautions on the back before filling in this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -30 * 478229 A7 ___ B7 V. Description of the invention ( Please read the first three, read the notes on the back, and then fill out this page. The material of the relay electrode 41 is the same as that of the discharge electrode 12. The relay electrode 4 1 is not just the bottom of the groove 4 3 for its purpose. It can also be formed on the side. In addition, the shape is also spaced from the dragon electrode 12 or the terminal electrode 14 so that it can be obtained freely unless it is too narrow. For the formation of the relay electrode 41, a printing method, spraying, etc. can be used. The same method is used to form the discharge electrodes such as the sputtering method. The wafer-type surge absorber 40 of this embodiment is manufactured in accordance with FIG. 5, so this will be described below. (Here, this wafer-type surge absorber As Embodiment 4 a). According to this embodiment, this embodiment is not restricted by this embodiment within the scope that does not violate its gist. In this embodiment, aluminum oxide is used as the wafer-type surge absorber 39, copper is used as the terminal electrode 14, and Ru02 is used for the discharge electrode 12 and the relay electrode 41. (1) The insulating substrate is The discharge electrode 12 was coated by a printing method, and the hand laser cut the discharge electrode 12 to form a discharge gap 1 7 with a width of 2 0 // m, and a discharge substrate 3 9 a was produced. The size of the discharge substrate 3 9 a was 3 · 2mmxl. 6mmxl · 5mm, discharge electrode 12 series length 1 · 6mm, width 0.5 · 111111, thickness 5 // 111. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (2) will ensure the width of the airtight room 18 0.5mm, A groove 43 of depth 0 · 2 5 mm is formed as an insulating substrate 39. Next, at the bottom of this groove 4 3, a length of 2 · 2 mm, a width of 0 · 4 8mm, and a thickness of 5 // m are formed by printing. Following the electrode 41, a cover substrate 39b was manufactured. The size of the cover substrate 39b was 3 · 2mmx 1 · 6mmx · 5mm〇 (4) A glass substrate 4 was used for the discharge substrate 3 9a and the cover substrate 3 9 b 4 After heating, an insulating substrate 3 9 was produced. -33-This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (3) 1 (Please read the precautions on the back before filling out this page) (5) Install metal airtight caps on both ends of the insulating substrate and burn them Terminal electrode 1 4. In this case, as shown in FIG. 5 (d), in order to ensure the conduction between the discharge electrode 12 and the terminal electrode 14, the terminal electrode 14 may be mounted after the auxiliary electrode 42 is formed. (6) The firing after the terminal electrode 14 is installed is performed in an argon gas flow of 10.1 X 1 0 4 P a to form the terminal electrode 14 and discharge gas in the airtight chamber 18 is also performed at the same time. Enclosed. This completes the manufacture of the wafer-type surge absorber of this embodiment. FIG. 6 shows another example of the wafer-type surge absorber of this embodiment. This wafer-type surge absorber 46 is connected to the wafer-type surge absorber 46, and an insulative substrate 39 is formed with a notch inwardly between the end of the relay electrode 41 and the terminal electrode 14 as a notch portion. 4 5 to expand the discharge space. The notch of the insulating substrate 39 is made by laser or division. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. This wafer-type surge absorber 46 is connected to the wafer-type surge absorber 46, and is characterized in that the inner end face of the insulating substrate 39 is placed on the relay electrode. A notch is formed between the end of the terminal 1 and the terminal electrode 14 as a discharge space. Specifically, it belongs to the above-mentioned manufacturing method of the wafer-type surge absorber 40. After the relay electrode 41 is formed at the stage (3), a laser is used to move from the end of the relay electrode 41 to the groove 4 3 end. The part forms a groove 4 3 (not shown in FIG. 6) as a deep notch 4 5 to expand the discharge space (see FIG. 6 ′). In the present embodiment, the depth of the groove 43 is set to a depth of 0 · 1 mm at the end of the insulating substrate 39 (herein, this wafer-type surge absorber is used as the embodiment 4b). Press, if auxiliary electrode 4 is formed 2 -34- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 B7 i. Invention description (3) 2, sometimes auxiliary electrode is also Form a gap. The trench 4 3 is preferably deepened toward the end of the insulating base 39, but if the discharge space is enlarged, the end is practically free from obstruction even if it is shallow. Further, the insulating substrate 39 may be formed with a notch 'before the relay electrode 41 is formed. Here, Examples 4a and 4b of the wafer-type surge absorber concerning this embodiment are compared with the conventional wafer-type surge absorber. As a conventional wafer-type surge absorber, a wafer-type surge absorber produced in the same manner as in Example 4a was used except that a relay electrode was not formed on the cover substrate (this is referred to as Comparative Example 5). In order to confirm the life characteristics of the wafer-type surge absorbers manufactured in Examples 4a, 4b and Comparative Example 5, the following tests were performed. Press, the width of the discharge gap of the wafer-type surge absorber used for the test is 2 0 // m 'Initial. The discharge is on. The initial voltage is 3 〇 0 V, the discharge gas system is argon, and the pressure of the tritium is 10. lx104Pa. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs After charging a capacitor of 1 500 p F at a voltage of 1 OKV ’This opening is applied to each chip-type surge absorber. The number of applications was 15 000, and the discharge start voltage was measured every 500 times during the process. According to the test samples, the number of examples and comparative examples was set to seven, and the average was seven. The results are shown in the table in FIG. 7. · As shown in Figure 7, the conventional wafer-type surge absorber of the comparative example was applied with 500 times of surge. Although the discharge start voltage increased, the implementation of the wafer-type surge absorber belonging to this embodiment Example 4a, at -35- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 ___B7___ V. Description of the invention (3 "1 0 0 0 times, in the fourth embodiment 4 b Even if the surge discharge start voltage is applied 1500 times, (please read the precautions on the back before filling this page) About the wafer-type surge absorber of this implementation, it is in the discharge gap 1 The relay electrode 41 is installed on the opposite side. Therefore, part of the discharge during the arc discharge flows through the relay electrode 41. The arc discharge is performed between the relay electrode 41 and the terminal electrode 1 4 and the heat load of the discharge electrode 12 is Reduced, the thermal damage of the discharge gap 17 is reduced, and the life of the wafer-type surge absorber is prolonged. Moreover, by expanding the discharge space between the relay electrode 41 and the terminal electrode 14, the arc discharge becomes easy not only for the wafer type The surge absorber's life is prolonged. Discharged metal vapor can be prevented from short-circuiting in the wafer-type surge absorber by depositing on the end face of the insulating substrate 39. [Fifth embodiment] Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8 and 9 illustrate a wafer-type surge absorber and a method for manufacturing the wafer-type surge absorber according to a fifth embodiment of the present invention. Fig. 8 is a side view of a main part of the wafer-type surge absorber of the present embodiment. Fig. 9 is a plan view of the wafer-type surge absorber shown in Fig. 8. Here, the wafer-type surge absorber 50 of this embodiment, and the wafer-type surge absorber of the first to fourth embodiments and use thereof The same or the same component is used to indicate the same or the same component, and detailed descriptions are omitted. A heat-resistant insulating substrate 11 is provided in a strip shape in comparison with the insulating substrate 1 which has a lower heat resistance. The low heat-resistant insulating layer 51 and the low heat-resistant insulating layer 51 are separated by a discharge gap 17 from the discharge center 17 to the left and right (left and right of the figure 8) along with the discharge electrodes described later. The low heat-resistant insulating layer 5 1 paper Applicable national standards Standard (CNS) A4 (210 X 297 mm) -36: ~ 478229 A7 ___B7__ V. Description of the invention (3) l (Please read the precautions on the back before filling this page) A discharge gap 1 7 is formed above The discharge electrode 12 and the discharge electrode 12 together with the above-mentioned low heat-resistant insulating layer 5 1 are separated from the discharge gap 17 to the center by about +. That is, between the insulating substrate 11 and the discharge electrode 12 At the same time, a low heat-resistant insulating layer 5 1 having a low heat resistance is provided from the insulating base 11. The insulating base 11 is a material having insulation and capable of maintaining airtightness, and examples thereof include alumina and silicon carbide. , Mullite, and mixtures thereof. As the low heat-resistant insulating layer 51, an insulating material capable of performing laser cutting satisfactorily, that is, an insulating material with low heat resistance and low reflection and transmission of light, for example, M g0 and the like can be cited. Examples of the discharge electrode 12 include Ru02, Ti, Ti0, TiN, Ta, W, SiC, Sn02, BaAl, Nb, Si, C, Au, Ag, Pt, Pd, La, and the like. mixture. The substrate surface of the insulating substrate 11 is a flat surface. The low heat-resistant insulating layer 51 is formed on the flat substrate surface of the insulating substrate 11. The discharge electrode 12 is further laminated on the low heat-resistant insulating layer 51. Therefore, the discharge electrode 12 is arranged in a state where the thickness component of the low heat-resistant insulating layer 51 is floating upward from the insulating substrate 11. Printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In this embodiment, the discharge electrode 12 is a thickness component of the low heat-resistant insulating layer 51, and it is arranged in a position floating from the insulating substrate 11 as an example. If the low-heat-resistant insulating layer 51 is provided between the discharge electrode 12 and the insulating substrate '11, the thickness component of the low-heat-resistant insulating layer 51 need not be floated. At this time, a band-shaped groove is formed in the insulating substrate 11 and a low heat-resistant insulating layer 5 1 is embedded in the groove. The Chinese national standard (CNS) A4 standard (210 X 297 mm) is applied to the basic insulating paper size. -37-478229 A7 B7 V. Description of the invention (Dragon (please read the precautions on the back before filling this page) The body 1 1 becomes the low heat-resistant insulating layer 5 1 on the same plane, and the laminated discharge electrode 12 can be laminated. With such a configuration, the cut can be made deeper, and the volume of the closed space of the airtight cap, which will be described later, can be ensured to be large. The discharge gap 17 is at least the discharge electrode 12 and the low heat-resistant insulating layer 5 1 is formed to be completely separated. At this time, one part of the thickness of the insulating substrate 11 may be removed by the discharge electrode 12. Therefore, the discharge gap 17 is the thickness of the 7 series discharge electrode 12 and the low heat-resistant insulating layer 5 1 The thickness and the insulating base 11 are formed by cutting out a part of the thickness direction to form a cut-in. The low-heat-resistant insulating layer 5 1 and the discharge electrode 12 are formed on the insulating base 11 and the same airtight cap as before 1 3 is adhered by the adhesive 5 2. The hermetic cap 1 3 has an air-tight chamber 18, a discharge gap 17 at the center of the air-tight chamber 18, and discharge electrodes 12 are connected at both ends to overflow from the outside. Both ends of the discharge electrode 12 are connected to the same terminal electrode 193 (refer to FIG. 20) as in the past by baking, plating, etc. The function of the wafer-type surge absorber 50 is described below. The chip-type surge absorber 50 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is located between the insulating substrate 11 and the discharge electrode 12 and is installed at least lower than the insulating substrate 11 and having low heat resistance. When the insulating layer 5 1 and the discharge gap 17 are formed by laser cutting, a low If thermal insulation layer 5 1 is also formed to be cut in. Thereby, a narrow and deep discharge gap 17 can be formed, and a discharge start voltage is formed. It is low, and it is not easy to accumulate dust of conductive materials, etc. -38- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 478229 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the invention (3¾ Also, insulation The low heat-resistant insulating layer 5 1 and the discharge electrode 12 are laminated on the flat substrate surface of the body 1 1. When the discharge electrode 12 is cut together with the low heat-resistant insulating layer 5 1, the discharge gap 1 7 is the low heat-resistant insulating layer 5 1 The thickness component will be placed at a position away from the substrate surface. The low-heat-resistant insulating layer 51 cut into the discharge gap 17 opens at both ends of the cutting direction on the substrate surface. Thus, the discharge is performed. Although the gap 17 has a narrow width, openings at both ends are ensured, and dust such as a conductive substance is easily discharged. As described above, according to the above-mentioned wafer-type surge absorber 50, a narrow and deep discharge gap 17 can be formed, the discharge start voltage can be reduced, and dust such as conductive substances can be prevented from easily accumulating in the discharge gap 1. 7. It can achieve lower voltage and longer life of discharge start voltage at the same time. The manufacturing method of the wafer-type surge absorber 50 is described below. When the wafer-type surge absorber 50 is manufactured, a low-heat-resistant insulating layer 51 is formed on a flat substrate of an insulating substrate 1 1 in a band shape. Next, the low-heat-resistant insulating layer 51 is covered, and a conductive film (discharge electrode 1 2) is laminated using a printing method, a deposition method, a sputtering method, or the like. Next, the conductive film is cut with a laser in a direction orthogonal to the longitudinal direction, and the low-heat-resistant insulating layer 51 is separated to form a pair of discharge electrodes 12 separated by a discharge gap 17. As described above, it is also possible to remove a part of the insulating substrate · 1 1 at the same time. Next, the airtight cap 1 3 is covered on the insulating base 11. The airtight cap 1 3 is formed between the insulating substrate 1 1 if an airtight chamber 1 is formed. 8 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -39- ----- T- --- ί ---- Aw ------ ^ --------- ^ II Aw ('Please read the notes on the back before filling this page) 478229 A7 ___ B7 V. Invention Description (covering, and the insulating substrate 1 1 is followed by an adhesive such as glass paste 5 2 ° (Please read the precautions on the back before filling this page) The airtight cap 1 31 is in the atmosphere, or a gas ( N2, Ar, Ne, He, Xe, H2, SF6, CF6, C3F8, C02 and their mixed gas), the required gas is closed in the airtight chamber 18 and sealed. After the airtight cap 13 The discharge electrode 12 overflowing to the outside of the airtight cap 1 3 forms a terminal electrode (not shown) (the same as the terminal electrode 193 shown in FIG. 20). The terminal electrode is a metal paste that is adhered to the dipping method and the like. , Formed on both ends of the insulating substrate 11 or on both sides of the airtight cap 13. Finally, the terminal electrodes are fired to complete the manufacture of the wafer-type surge absorber 50. The manufacturing method of the wafer-type surge absorber 50 printed by the cooperative is to form a low heat-resistant insulating layer 51 on the insulating substrate 11 and the conductive film laminated on the low heat-resistant insulating layer 51 is combined with low heat resistance. The insulating layer 51 is separated by laser cutting, so even with a low-output laser, the low-heat-resistant insulating layer 51 can be deeply cut together with the conductive film, and a wafer with a narrow width and a deep discharge gap 17 can be easily obtained. Type surge absorber 50. The above-mentioned wafer type surge absorber 50 is actually manufactured by the above-mentioned manufacturing method, and compared with the wafer type surge absorber of the comparative example manufactured by the conventional manufacturing method, the surge life is compared. The results are explained as follows. (About the wafer-type surge absorber of this embodiment) • The size of the insulating substrate: 3 X 1 · 5 X thickness 0 · 5 mm -40- This paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 478229 A7 B7 V. Description of the invention (Material of insulating substrate: thickness of low heat-resistant insulating layer of alumina substrate: 1 0 // m Material of low-heat-resistant insulating layer: M g〇 Discharge electrode Material: Ti discharge electrode Thickness: l // m Width of discharge gap: 7 // m Cut-in depth of discharge gap: 1 0 // for low heat-resistant insulation layer 2 // for insulating substrate 2 m total 1 2 // m) Sealing gas : Ar gas (sealing pressure 1 · 〇6xl04P〗 (Comparison wafer type surge absorber) • Size of insulating substrate: 3 X 1 · 5 X thickness 0.5 mm • Material of insulating substrate: alumina substrate • Thickness of the discharge electrode: l // m • Material of the discharge electrode: T i • Width of the discharge gap: 1 1 // m • Cut-in depth of the discharge gap: 3 // m for an insulating substrate • Sealing gas: Ar Gas (sealing pressure 1.06xl04P [Comparison result] For the wafer-type surge absorber of the example, the discharge start voltage becomes 1 5 0 V, and for the surge life characteristics, the wave head length V s and the wave tail length 2 0 / / s, the surge of the current waveform of the applied current 値 5 〇 A is installed --------------- (Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to China National Standard (CNS) A4 (210 X 29 (7 mm) -41 · 478229 A7-B7 V. Description of the invention (3) 9 During the life test, the insulation resistance is maintained at 10 Ω or more even if it is applied more than 100 times. (Please read the precautions on the back before filling in this page.) In contrast, the wafer type surge absorber of the ratio to the comparison example is the depth of cut into the insulating substrate when the discharge gap width is 1 0 // m or less. 2 // m or less, a short-circuit failure occurred. Therefore, the width of the discharge gap is 1 1 // m, and the cut-in depth for the insulating substrate is set to 3 // m. When a wafer-type surge absorber is manufactured, the discharge start voltage system becomes 1 8 0 V. When the same life test as described above is performed, the insulation resistance is reduced from 10 9 Ω within 100 times of application. As explained above, regarding the wafer-type surge absorber of this embodiment, a low heat-resistant low-heat-resistant insulating layer having a lower heat resistance than the insulating base 11 is installed between the insulating base 11 and the discharge electrode 12. 1。 So when the tiny gap of the discharge electrode 12 is formed by laser cutting, the low heat-resistant insulating layer 5.1 can also be cut deeply. As a result, a narrow gap and a small gap can be formed, and the discharge starting voltage can be reduced. Furthermore, it is possible to prevent the accumulation of dust such as conductive materials, and to reduce both the voltage and the longevity of the discharge starting voltage. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Sixth Embodiment] A wafer-type surge absorber and a manufacturing method thereof according to a sixth embodiment of the present invention are described below with reference to FIGS. 10 to 12. Fig. 10 is an overall perspective view showing an example of a wafer-type surge absorber according to the present invention, Fig. 11 is a longitudinal sectional view of Fig. 10, and Fig. 12 is an enlarged view of a part of Fig. 11. Here, about the wafer-type surge absorber of this embodiment-42- The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (4)) (Please first Read the notes on the back and fill in this page again.) 6 0 'About the wafer-type surge absorber 60 of the first to fifth embodiments and the components used for manufacturing the same or the same components are denoted by the same symbols, and details are omitted. Say it. As shown in FIG. 10 and FIG. 11, the wafer-type surge absorber 60 includes an insulating substrate 11 made of alumina and the like, and a discharge electrode 12 a provided on the insulating substrate 11. , 12b, and a discharge gap 17 formed in a predetermined size between the discharge electrodes 1 2 a and 1 2 b. As shown in Fig. 10, an insulating substrate 11 having discharge electrodes 12a and 12b and a discharge gap 17 is covered with a gas-tight cap 13 made of glass (made of an insulator). The airtight cap 1 3 has a peripheral portion covered with an adhesive on the outer periphery of the insulating base 11, and an airtight chamber 18 is formed between the insulating base 1 1 and the airtight cap 13. The airtight chamber 18 is filled with a predetermined gas which is better sealed and is arranged in the airtight chamber. The two discharge electrodes 1 2 a, 1 2 b and the discharge gap 18 of 18 are exposed to the above-mentioned predetermined gas environment. . Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, as shown in Figure 11, the discharge electrodes 1 2 a, 1 2 b, and the base ends 3 3 and 3 4 extend to the insulating base 1 1 and the cap 1 3 The outer end surface is connected to terminal electrodes 1 4 a and 1 4 b covering both ends of the insulating base 11 and the cap 13 to form a wafer-type surge absorber 60. Therefore, airtight caps 13 are formed on the base electrode end portions 33 and 34 of the discharge electrodes 12a and 12b and the outer peripheral portion of the insulating substrate 11. Dielectric layers 61 and 62 are provided between each of the insulating substrate 11 and the discharge electrodes 1 2 a and 1 2 b. The dielectric layers 61 and 62 are on the insulating substrate 1 1 if they contain the corresponding discharge electrodes 1 2 a, -43- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 B7 V. Description of the invention (4) 1 (Please read the precautions on the back before filling in this page) 1 2 b is laminated, and the dielectric constant 较 is 2 times larger than that of the insulating substrate 1 1 The dielectric constant is formed by the material. At this time, the dielectric layers 6 1 and 6 are partially exposed in the discharge gap 17. In this embodiment, an alumina substrate (dielectric constant ε r: about 10) is used as the insulating substrate 11, and the dielectric constants of the dielectric layers 6 1 and 6 2 are 3 5 0 0 0 °. In the wafer-type surge absorber described above, first, dielectric layers 6 1 and 62 are formed on the insulating substrate 11 by printing in advance, and then discharge electrodes 12 a and 12 b are formed on the insulating substrate 11 by printing. Then, laser light is radiated between the discharge electrodes 1 2 a and 1 2 b to form a discharge gap 17. At this time, the dielectric layers 6 1 and 6 2 form the same gaps as their discharge gaps 17 and do not function as capacitors. This wafer-type surge absorber 60, when a surge voltage is applied, triggers a glow discharge between the tip ends of the discharge electrodes 1 2 a and 1 2 b through a discharge gap 17, and the discharge is in the form of a creeping discharge. It extends to the base end portions 33 and 34 of the discharge electrodes 12a and 12b, and an arc discharge is performed between these base end portions 33 and 34 to absorb a surge voltage (see FIG. 16). When printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs during the above-mentioned discharge, the dielectric constant between the insulating substrate 11 and the discharge electrodes 1 2 a and 1 2 b is lower than that of the insulating substrate 11 The dielectric layers 61 and 62 with high dielectric constants, therefore, when a surge voltage is applied, the electric field is concentrated on the dielectric layers 61 and 62 through the discharge electrodes 1 2 a and 1 2 b, and the two dielectric layers are in contact with each other. The discharge electrodes 12a and 12b of the electric mass layers 61 and 62 release electric field electrons. Therefore, the paper size of -44- applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 B7 V. Description of the invention (the initial stage can be performed with low voltage between the discharge electrodes 1 2 a and 1 2 b) Electron discharge is not subject to the work function of conventional discharge electrodes 1 2 a, 1 2 b, or the material of the gas, and can operate reliably even at low voltages. Moreover, only the insulating substrate 11 and The dielectric electrodes 6 1 and 6 2 may be provided at the corresponding positions of the discharge electrodes 1 2 a and 1 2 b. Since the dielectric layers 6 1 and 6 2 are also provided with gaps, the overall electrostatic capacitance is not increased. It can also be used in high-frequency circuits. Also, only the dielectric layers 6 1 and 6 2 are provided between the insulating substrate 11 and the discharge electrodes 12 a and 12 b. The diamond formed by the CVD method or the slurry method of the wafer-type surge absorber shown in JP 0 0 0 -1 2 1 8 can be easily formed by comparison. In this embodiment, it is used as the insulating substrate 1 1 Using an alumina substrate, the dielectric layers 61 and 62 having a dielectric constant of 3500 are formed to a thickness of 5 // m, and The discharge electrodes 1 2 a and 12 b made of B a A 1 are formed at 10 // m, and a discharge gap 17 with a width of 20 // m and a depth of 20 // m is used to make a wafer-type surge absorber. The electrostatic capacitance was 1 p F or less, and the DC discharge start voltage was changed to 100 V printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As Comparative Example 6, an alumina substrate having the same size as the above was used, and a discharge electrode was produced. In the case of a wafer-type surge absorber without the dielectric layers 61 and 62, even if the electrostatic capacitance has 1 PF, the DC discharge start voltage becomes 200 V, and as Comparative Example 7, the alumina substrate is replaced with a dielectric constant ε. When r is a dielectric of 3500, the electrostatic capacitance is 5pF, and the DC discharge start voltage is 140V. Based on this, the dielectric layer is confirmed to confirm -45- This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 478229 A7 B7 V. Description of the invention (it must be possible to achieve a low voltage. (Please read the precautions on the back before filling out this page) In this example, alumina is used as the insulating substrate 1 1 On the relationship of the substrate, although it means __ The example of using the dielectric layers 6 1 and 62 having a dielectric constant (ε r) of 3 5 0 0 may also be in the range of 10 to 100,000, especially 1,000 to 100,000 depending on the dielectric constant of the material of the insulating substrate 1 1. It is preferably about 3 0 0 0 0. Also, it can also be used as the thickness of the dielectric layers 6 1 and 6 2. Although the thickness is about 1 to 1 00 // m, the capacitance is about 10 to 2 0 #m. Better. The present invention is not limited to the above-mentioned embodiments, but also includes various modified examples in which the above-mentioned embodiments are combined. Brief Description of Drawings Figure 1 (a) shows the wafer type surge absorber and its manufacturing steps in the first embodiment of the present invention, and shows the relationship between the insulating sheet and the number of divisions, the discharge electrode, and the discharge gap. Oblique view. Figure 1 (b) is a perspective perspective view showing the completed state of the wafer-type surge absorber according to the first embodiment of the present invention. The second (a) picture printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs shows the wafer-type surge absorber and its manufacturing steps according to the second embodiment of the present invention, and shows the insulating sheet and the number of divisions, the discharge electrode, An oblique view of the relationship between the discharge gaps. Figure 2 (b) is a perspective perspective view showing the completed state of the wafer-type surge absorber according to the first embodiment of the present invention. Fig. 3 is a perspective view showing the whole of a wafer-type surge absorber according to a third embodiment of the present invention. -46- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 public love) 478229 A7 B7 V. Description of the invention (4 Figure 4 is a longitudinal section of Brother 3 and Brother 1) (Please first Read the notes on the back and fill in this page again.) Figure 5 (a) shows the discharge substrate manufactured by the wafer-type surge absorber of the fourth embodiment of the present invention. Figure 5 (b) shows the present invention. The cover substrate of the wafer-type surge absorber in the fourth embodiment. Fig. 5 (c) shows the state where the wafer-type surge absorber of the fourth embodiment of the present invention joins the discharge substrate and the cover substrate. 5 (d) is a longitudinal sectional view showing a wafer-type surge absorber according to a fourth embodiment of the present invention. FIG. 6 is a diagram showing another example of the wafer-type surge absorber according to the fourth embodiment of the present invention. Vertical sectional view. Figure 7 is a table showing the results of measuring the life characteristics of the wafer-type surge absorber and the conventional wafer-type surge absorber according to the fourth embodiment of the present invention. A side view of the main part of the wafer-type surge absorber of the fifth embodiment. Fig. 9 is a plan view showing the wafer-type surge absorber shown in Fig. 8; printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs; The overall perspective view. Figure 11 is a longitudinal sectional view of Figure 10. Figure 12 is a partially enlarged explanatory view of Figure 11. Figure 13 is a conventional surge absorber. Figure 14 is This is a conventional wafer-type surge absorber. • 47- This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 478229 A7 B7 V. Description of the invention (not the first 5 (a)) A perspective view of a conventional wafer-type surge absorber. Figure 15 (br is an A-A arrow diagram of Figure 15 (a). Figure 16 shows a longitudinal view of a conventional wafer-type surge absorber. Fig. 17 is a side view showing the main part of a conventional wafer-type surge absorber. Fig. 18 is a plan view of the wafer-type surge absorber shown in Fig. 17. Fig. 19 is a diagram showing a conventional method. The side view of the cap of the known wafer-type surge absorber followed by the process. Figure 20 shows a conventional wafer-type surge absorber. Side view. 0 (Please read the precautions on the back before filling out this page)-Binding: Printed on the main components of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 140 Surge absorber 141 Cylindrical insulator 145 Thermal conductor 143 Cap electrode 20 ， 10,160,170,150,195 Wafer-type surge absorbers 151,161 Insulating substrates 153,185 Discharge gaps 176,191,156 Airtight caps 12,152,183 Discharge electrodes 52,187 Adhesives 丨 Lines · This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) -48- 478229 A7 _B7 V. Description of the invention (printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 41 Printed by relays 193 Terminal electrodes 189 — Confined space 11 Insulating substrate 7 Insulator sheets 18 Airtight chamber 13 Airtight Base end of cap 33,34 (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -49-