CN103280284B

CN103280284B - Voltage restricted type low-voltage distribution surge protector and manufacture method thereof

Info

Publication number: CN103280284B
Application number: CN201310154342.4A
Authority: CN
Inventors: 全宇辰
Original assignee: Beijing Jieantongda Scientfic & Trading Co Ltd
Current assignee: Beijing Jie'an Tongda Technology Co ltd
Priority date: 2013-04-28
Filing date: 2013-04-28
Publication date: 2016-03-30
Anticipated expiration: 2033-04-28
Also published as: CN103280284A

Abstract

Embodiments provide a kind of voltage restricted type low-voltage distribution surge protector and manufacture method thereof.Does the method mainly comprise: according to MOV(Zinc? oxide? varistor? chips, zinc oxide varistor chip) size of potsherd, make latticed silk screen, the obverse and reverse of silk screen is covered respectively on the front and aspect being buckled in MOV potsherd, the front surface of MOV potsherd and anti-surface are divided into multiple boxed area, this boxed area is the region of permeation electrode slurry, and the join domain between boxed area is the region of impermeable electrode slurry.The big current that the surface of MOV potsherd is flow through can be decomposed into some small area analysis by the multiple boxed area on the surface of the MOV potsherd in the embodiment of the present invention, the heat energy that local big current causes is scattered, SPD can not be flow through due to higher power current substantially and lost efficacy with on fire.

Description

Voltage restricted type low-voltage distribution surge protector and manufacture method thereof

Technical field

The present invention relates to Lightning Prevention Technique field, particularly relate to a kind of voltage restricted type low-voltage distribution SPD(Surgeprotectivedevices, surge protector) and manufacture method.

Background technology

The development of mankind nowadays science and technology has entered the developing stage of advanced IT application, but still in the puzzlement being subject to the energy, environment and these three factors of safety, particularly environment and safety, safety is the primary condition maintaining people's normal life, work, cause unsafe factor a lot, but nothing more than natural disaster and the large class of man-made calamity two.When not considering human factor, in all age we mankind carry out indomitable opposing, especially to the protection of thunder and lightning with the spirit tried to explore to natural calamity all the time.In 10 years of the international natural disaster reduction determined in the United Nations, Lightning Disaster has risen to natural calamity first place, the example such as the loss of life or personal injury in the natural environment of human survival caused by thunder and lightning, fire, blast, the collapsing of building, forest fire is innumerable, particularly in recent years along with the develop rapidly of electronic technology and the extensive use of electronics power consumption equipment, the example that various electronics power consumption equipment is struck by lightning also happens occasionally.The direct losses that lightening hazard causes and indirect loss are serious, or even cannot estimate.

Calendar year 2001, government promulgated " People's Republic of China's Meteorological Act ", and China's the earth lightning protection cause is flourish subsequently, and low-voltage distribution SPD is a large amount of in every field, batch uses.The different statistic of classifications of impaired object from nearly 10 years city thunder calamities, the loss that thunder and lightning brings the most seriously microelectronics facility, ratio is up to 35.6%, next is 25.5% of power equipment, 3rd is 22.2% of family expenses and office electrical equipment, these electric power, electronic equipment accounts for 83.4% of sum, this illustrates along with Chinese society modernization, informationalized promotion, the harm of indirect lightning strike is increasing, computer, ELV information system, broadcast telecommunications, watch-dog, power equipment, the threat that common electric etc. are subject to indirect lightning strike exceedes building, these objects threatened by direct stroke of trees are according to national Lightning monitoring data statistics result.

Comprehensive use of Thunder Protection mesolow distribution SPD, the social demand also for shocking preventing technology while effectively reducing lightning hazards accident provides wide space.Theoretically, as long as the place of electricity consumption, just surge protector is needed.Surge protector has been widely used in the industries such as building, communication, security protection, finance, automation, traffic, electric power, wide market.

Voltage restricted type low-voltage distribution SPD accounts for 99% of low-voltage distribution SPD total amount, along with a large amount of uses of SPD, the fire incident of zinc oxide varistor class voltage restricted type low-voltage distribution SPD and lightning protection lost efficacy and highlighted, zinc oxide varistor class voltage restricted type low-voltage distribution SPD can cause higher power current to flow into SPD due to a variety of causes such as power supply transien overvoltage faults, the heat energy continued that this power current causes can not get distributing, initiation SPD inefficacy is also on fire, causes fire.SPD fire incident annual according to statistics, up to more than ten thousand, causes huge economic loss to country and enterprise.It is reported × economize × zinc oxide varistor class voltage restricted type low-voltage distribution SPD is on fire in base station, finally causes whole base station (50 ㎡) building to burn.

Tens million of zinc oxide varistor class voltage restricted type low-voltage distribution SPD are arranged on the different places (comprising: the place that many combustible and explosive area, crowd's centralized activity, life, yard are significant with national economy in one's power) of all trades and professions every year, equaling to have buried tens million of time bombs, if thoroughly do not solved, how many tragedies can occur.

Voltage restricted type low-voltage distribution SPD take zinc oxide varistor as core inner chip, chief component comprises: MOV(Zincoxidevaristorchips, zinc oxide varistor chip), flame retardant plastics housing, encapsulating material, metal connector, connection soft metal (alloy) material etc.The manufacturing process flow diagram of a kind of zinc oxide varistor class voltage restricted type low-voltage distribution SPD of the prior art as shown in Figure 1, comprises following processing procedure:

1. prepare burden:

By good for main to zinc oxide, magnesium oxide, cobalt oxide, antimony oxide, manganese oxide, aluminium oxide, bismuth oxide, boron oxide etc. pulverulent material assembly according to a certain percentage, put into airtight container.

2. ball milling mixing:

The material prepared is put into ball mill, after adding adhesive and water, carries out ball mill mixing.Ball in ball mill has two classes: alumina ball and agate ball (Main Ingredients and Appearance silicon dioxide), inner liner of bowl mill plate has rubber-like, manganese steel and ceramic-like.

3. mist projection granulating:

The material mixed by ball milling is put into sponging granulator and is carried out granulation, the particulate material just as powdery of doing washing made.

4. compression molding:

Above-mentioned particulate material is placed in the grinding tool of forcing press, then forcing press start to carry out to suppress, pressurize, the demoulding.A MOV blank has just been born, and this MOV blank can be random geometry (the possessing setting thickness) bodies such as circle, rectangular sheet, and die of press determines forming shape.The density of formed body is less than or equal to 3.3 grams/cubic centimeter

5. blank chip:

Some MOV blanks are piled up in special-purpose fire-resistant containers, waits to be sintered.

6. high temperature binder removal:

Above-mentioned refractory material containers is put into tunnel kiln, realizes first sintering binder removal (temperature: 400-600 degree Celsius).

7. ceramic post sintering:

By the above-mentioned refractory material containers after high temperature binder removal, put into the sintering (1150-1250 degree Celsius) that high temp tunnel kiln carries out 4-8 hour.Voltage gradient (conducting voltage under every millimeter of direct current 1 milliampere) more than 180 volts/millimeter.After oversintering, MOV blank just becomes the MOV potsherd of black.

8. outward appearance detects:

Refractory material containers after high temperature sintering is opened, the MOV potsherd (random geometry) in black is taken out, carries out visual inspection, sub-elect ceramics cracking, distortion, slabbing etc. for substandard product.The MOV potsherd of above-mentioned black as shown in Figure 2.

9. electrode slurry coating:

Electrode slurry is metallic conductor electron-like ceramic electrode slurry, and this electrode slurry is electric conducting material mainly with argent, and is mixed with other organic and inorganic material.Electrode slurry adopts the methods such as mask print process, metallikon, Dipcoat method, spray impregnation rubbing method, print-on coating method, curved surface screen printing rubbing method to be coated on front surface and the anti-surface of MOV potsherd, and above-mentioned electrode slurry takes (reduction) electrode of MOV potsherd.Electrode slurry is coated on potsherd, and its shape is single independent geometry, but shape is substantially identical with ceramics shape.Such as: wafer type MOV potsherd electrode slurry coating shape is also circular, rectangle MOV potsherd electrode slurry coating shape is also rectangle.No matter what geometric figure, this figure only to occur once and for once at MOV potsherd homonymy.

10. dry

The above-mentioned MOV potsherd having printed electrode slurry is put into elevated temperature vessel dry, bake out temperature is not more than 100 degrees Celsius.

11. electrode sintering

By (having printed electrode slurry) the MOV potsherd of drying, put into tunnel cave road and carry out electrode sintering, sintering temperature 300-850 degree Celsius, sintering time 1-4 hour.

12. testing electrical properties

MOV potsherd (also known as zinc oxide varistor conducting strip) after electrode sintering restores electrode material, usual electrode slurry is for main sill with silver, the silver gone out through sintering and reducing is adsorbed on the dispensing area of MOV potsherd, zinc oxide varistor silver strip is called in letter again, and can carry out classical electrical at silver place, both sides can test.

13. metal electrode film welding

Metal electrode film uses copper alloys metal usually, and its copper content is not less than 55%, metal electrode film thickness 0.45-0.55 millimeter.Metal electrode film is welded on zinc oxide varistor silver strip.Welding material is general scolding tin.Shape and the coating electrode slurry of metal electrode film sinter separate out electrode shape, area can be identical or not identical.

14. resin-encapsulated

Complete after metal electrode film and the electrode slurry of MOV potsherd sinter and separate out the welding of electrode, by exposed for two of metal electrode film (up and down each one) conductive electrode pins, the fire-retardant organic epoxy resin in other position carry out encapsulating, filling.

15. zinc oxide varistor class voltage restricted type low-voltage distribution SPD assembly

Respectively SPD plastic fittings, metalwork accessory mechanical package are got up according to drawing, then according to drawing, SPD plastic fittings and metalwork accessory mechanical package are got up.MOV finished product is contained in surge protector plastic casing, sometimes needs to carry out secondary resin encapsulating and embedding process.Soft metal connects: when being connected with metal electrode film by the metal elastic force sheet in metal fittings, connection transition material is soft metal, and metal elastic force sheet and soft metal constitute the disconnector of SPD, and above-mentioned soft metal is exactly General low temperature solder stick

Fig. 3 is the finished figure of single MOV, the parallel connection figure of Fig. 4 to be the parallel connection figure of three MOV finished products, Fig. 5 be two MOV finished products.Also several MOV can be installed in parallel in same surge protector plastic casing, serve as a voltage restricted type low-voltage distribution SPD.

The shortcoming of above-mentioned zinc oxide varistor class voltage restricted type low-voltage distribution SPD of the prior art is:

1) although zinc oxide varistor class voltage restricted type low-voltage distribution SPD has possessed fault disconnector (or claiming release), but at present often when the electric current of the regional area at the edge of MOV potsherd is excessive, SPD is just caused to lose efficacy, and when there is catching fire, in this case, the electric current of the metal electrode film that the disconnector of above-mentioned SPD connects is less, do not reach the operating current of disconnector at all, disconnector cannot work, SPD and electric power system cannot be disconnected, the fire phenomena after SPD also just cannot be prevented to lose efficacy.

2) formula of MOV material single (main material such as zinc oxide, magnesium oxide, cobalt oxide, antimony oxide, manganese oxide, aluminium oxide, bismuth oxide, boron oxide), lacks other material.

3) (in ball mill) alumina ball, agate ball (Main Ingredients and Appearance silicon dioxide), (inner liner of bowl mill is) aluminium oxide ceramics self wearing and tearing blanking are easily mixed into positive gauge material by the material ball milling mixing of MOV, and causing impurity to be mixed into directly affects properties of product.

4) density of MOV blank formed body is too low, is less than or equal to 3.3 grams/cubic centimeter, saves material (cost is low), but the quantity of electric charge that unit volume is held is less.

5) electrode slurry coating shape is single, and power current intensity of cannot degrading, cannot decompose Joule energy.

6) encapsulating material uses fire-retardant organic epoxy powder encapsulating material and potting compound, but lacks dilution organic material, thus cannot play the effect having reduced fire element.

7) soft metal connects most employing General low temperature solder stick, General low temperature solder stick is successful (effective under being usually less than 2 amperes of power currents) under long-time power dissipation characteristics in leakage current region, but more than 100 amperes under power current, then be difficult to have effect, reason is that the response time is too slow, and wait it to respond, SPD has caught fire for a long time.

8) when enforcement SPD experiment on fire, transient surface temperature on fire above MOV is greater than 1000-1500 degree Celsius, if MOV side uses organic material (dielectric strength is poor), because ceramic chip is different from organic epoxy expansion coefficient of encapsulating, produce local detachment, and then it is creepage that high pressure occurs, and causes phenomenon on fire.

9) zinc oxide varistor chip metal electrode slice thickness problem, voltage gradient every millimeter 180 volts, the coulomb amount directly causing unit volume little (thickness minimizing) to be held is few, and joule tolerance is low.

10) sintering temperature height 1150-1250 degree Celsius, and sintering time is short, the higher production cost of this technique power saving efficiency is low, but easily causes zinc oxide varistor chip die and grain boundary layer separation effect to occur.

Summary of the invention

The embodiment provides a kind of voltage restricted type low-voltage distribution SPD and manufacture method thereof, the fire caused to realize effectively preventing voltage restricted type low-voltage distribution SPD to lose efficacy.

A manufacture method for voltage restricted type low-voltage distribution surge protector, comprising:

The front surface of MOV potsherd and anti-surface are divided into multiple boxed area, and described boxed area is the region of permeation electrode slurry, and the join domain between described boxed area is the region of impermeable electrode slurry;

Print electrode in the positive and negative surface of described MOV potsherd slurry; the MOV potsherd having printed electrode slurry is dried, sintering processes; complete the surface metalation work of described MOV potsherd, metal pole piece welding is carried out to described MOV potsherd, resin-encapsulate, assembling fittings obtain voltage restricted type low-voltage distribution surge protector.

A kind of voltage restricted type low-voltage distribution surge protector; the front surface of the zinc oxide varistor chip MOV potsherd in described voltage restricted type low-voltage distribution surge protector and anti-surface comprise multiple boxed area; described boxed area is the region of permeation electrode slurry, and the join domain between described boxed area is the region of impermeable electrode slurry.

The technical scheme provided as can be seen from the embodiment of the invention described above, the front surface of MOV potsherd and anti-surface are divided into multiple boxed area by utilizing latticed silk screen by the embodiment of the present invention, the big current that the surface of MOV potsherd is flow through can be decomposed into some small area analysis by above-mentioned multiple boxed area, the heat energy that above-mentioned local big current causes is scattered, SPD can not be flow through due to higher power current substantially and lost efficacy with on fire.Even if because the power current flowing through SPD causes too greatly SPD to lose efficacy, now, disconnector will play a role, SPD and other devices will be separated, thus the fire that effectively prevent SPD inefficacy and cause.

Accompanying drawing explanation

In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.

Fig. 1 is the manufacturing process flow diagram of a kind of zinc oxide varistor class voltage restricted type low-voltage distribution SPD of the prior art;

Fig. 2 is the schematic diagram of the MOV potsherd of a kind of black of the prior art;

Fig. 3 is the finished product schematic diagram of a kind of single MOV of the prior art;

Fig. 4 is the schematic diagram in parallel of a kind of three MOV finished products of the prior art;

Fig. 5 is the schematic diagram in parallel of a kind of two MOV finished products of the prior art;

The pattern schematic diagram of the silk screen in the first electrode slurry sintering scheme that Fig. 6 provides for the embodiment of the present invention one;

The structural representation of the MOV potsherd after the sintering in the first electrode slurry sintering scheme that Fig. 7 provides for the embodiment of the present invention one;

The pattern schematic diagram of the silk screen in the second electrode slurry sintering scheme that Fig. 8 provides for the embodiment of the present invention one;

The structural representation of the MOV potsherd after the sintering in the second electrode slurry sintering scheme that Fig. 9 provides for the embodiment of the present invention one;

The pattern schematic diagram of the high resistant glaze slip silk screen in the third electrode slurry sintering scheme that Figure 10 provides for the embodiment of the present invention one;

The schematic diagram having printed the MOV potsherd of high resistant glaze slurry in the third electrode slurry sintering scheme that Figure 11 provides for the embodiment of the present invention one;

In the third electrode slurry sintering scheme that Figure 12 provides for the embodiment of the present invention one print electrode slurry and after oversintering, the schematic diagram of potsherd (just and reverse side) precipitating metal electrode on the surface;

The pattern schematic diagram of the high resistant glaze slip silk screen in the 4th kind of electrode slurry sintering scheme that Figure 13 provides for the embodiment of the present invention one;

The schematic diagram having printed the MOV potsherd of high resistant glaze slurry in the 4th kind of electrode slurry sintering scheme that Figure 14 provides for the embodiment of the present invention one;

In the 4th kind of electrode slurry sintering scheme that Figure 15 provides for the embodiment of the present invention one print electrode slurry and after oversintering, the schematic diagram of potsherd (just and reverse side) precipitating metal electrode on the surface;

The structural representation comprising single zinc oxide varistor class voltage restricted type low-voltage distribution SPD of disconnector that Figure 16 provides for the embodiment of the present invention one;

The structural representation comprising 2 zinc oxide varistor class voltage restricted type low-voltage distribution SPD of disconnector that Figure 17 provides for the embodiment of the present invention one;

The structural representation comprising 3 or many zinc oxide varistor class voltage restricted type low-voltage distribution SPD of disconnector that Figure 18 provides for the embodiment of the present invention one.

Embodiment

For ease of the understanding to the embodiment of the present invention, be further explained explanation below in conjunction with accompanying drawing for several specific embodiment, and each embodiment does not form the restriction to the embodiment of the present invention.

Embodiment one

The front surface of MOV potsherd and anti-surface are divided into multiple boxed area by the embodiment of the present invention, and the multiple boxed area on the front surface of described MOV potsherd and the multiple boxed area on anti-surface are in correspondence with each other.Described boxed area is the region of permeation electrode slurry, and the join domain between described boxed area is the region of impermeable electrode slurry.The big current that the surface of MOV potsherd is flow through can be decomposed into some small area analysis by above-mentioned multiple boxed area, is scattered by the heat energy that above-mentioned local big current causes, and SPD can not be flow through due to higher power current substantially and lost efficacy with on fire.

The fabrication scheme that this embodiment offers a kind of zinc oxide varistor class voltage restricted type low-voltage distribution SPD mainly comprises:

1: zinc oxide varistor chip (MOV) material configuration:

2: zinc oxide varistor chip (MOV) material ball milling mixes:

The material of the MOV prepared is put into ball mill, after adding adhesive and water, carries out ball mill mixing.Ball in ball mill has two classes: alumina ball and agate ball (Main Ingredients and Appearance silicon dioxide), inner liner of bowl mill plate has rubber-like, manganese steel and ceramic-like.(in ball mill) alumina ball, agate ball (Main Ingredients and Appearance silicon), aluminium oxide ceramics (inner liner of bowl mill) self wearing and tearing blanking are easily mixed into positive gauge material by the mixing of MOV material ball milling, cause impurity to be mixed into, in addition element silicon and the material and function parameter influence of aluminium element to MOV very large.

For solving the problem, the embodiment of the present invention is by compressing for zinc oxide material (being generally rectangle) and after sintering, pile up and serve as interior lining panel in ball mill.The interior spheroid of ball mill, adopts zinc oxide this pellet, fabrication scheme: by dry-pressing formed for zinc oxide be cylinder, under 1200-1250 degree Celsius, sinter 5-10 hour.The zinc oxide cylinder obtained after sintering is put in ball mill, carries out the material mixing of described MOV.After long-time ball milling, just become zinc oxide sphere (ball milling ball).Carry out material mixing with this pellet of zinc oxide, inner liner of bowl mill material is also zinc oxide.

3. zinc oxide varistor chip (MOV) material spray granulation:

4. zinc oxide varistor chip (MOV) compression molding:

Above-mentioned particulate material is placed in the grinding tool of forcing press, then forcing press start to carry out to suppress, pressurize, the demoulding.A MOV blank has just been born, and MOV blank can be random geometry (the possessing setting thickness) bodies such as circle, rectangular sheet, and die of press determines forming shape.Under the density every cubic centimetre of formed body (3.6-4.5) gram.

5. zinc oxide varistor chip (MOV) material voltage gradient design:

Direct current conducting voltage under every millimeter of direct current 1 milliampere: every millimeter of (140-160) volt.

6. zinc oxide varistor chip (MOV) ceramics sintering:

Sintering temperature should at 950-1100 degree Celsius, sintering time 7-12 hour, and the MOV potsherd of the black obtained after sintering is exactly MOV potsherd.

7. Zinc Oxide Ceramic for Varistors plate electrode slurry coating sintering method 1:

Electrode slurry is metallic conductor electron-like ceramic electrode slurry, and many employings are at present electric conducting material with argent and are mixed with the electrode slurry of other organic material.Electrode slurry adopts the methods such as mask print process, metallikon, Dipcoat method, spray impregnation rubbing method, print-on coating method, curved surface screen printing rubbing method, be coated on Zinc Oxide Ceramic for Varistors sheet above and below, take the electrode of zinc oxide varistor.

In actual applications, the shape of above-mentioned MOV potsherd can be arbitrary, such as, square, circular, triangle, ellipse, rhombus, irregularly shaped etc.When adopting curved surface screen printing rubbing method to carry out coating electrode slurry, the shape of silk screen and the shape of described MOV potsherd are identical, and such as, MOV potsherd is square, then adopt square silk screen.

Be square and circular with MOV potsherd below, silk screen is also for square silk screen and circular silk screen are that example illustrates.

The electrode slurry of the first MOV potsherd that this embodiment provides is coated with, sintering scheme is as follows:

The pattern schematic diagram of a kind of silk screen that this embodiment provides as shown in Figure 6, according to the size of square MOV potsherd, makes latticed square silk screen, the obverse and reverse of this square silk screen comprises multiple S1 region; Or, according to the size of circular MOV potsherd, make latticed circular silk screen, the obverse and reverse of this circular silk screen comprise multiple S2 region.Above-mentioned S1 or S2 can be (can be circular and rectangle) geometric figure arbitrarily, and the quantity of S1 and S2 is at 3-400.As shown in Figure 6, silk screen has covering part and non-covering part, the object of covering part does not allow electrode slurry permeate, and the object of covering part allows electrode slurry infiltration, and above-mentioned covering part can be photoresists or nylon etc.

The square silk screen made is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the periphery of described square region is the insulating flange region of 0.5-1.5 millimeter, described S1 region is the region of permeation electrode slurry, and the join domain between described S1 region is the region of impermeable electrode slurry; Or, described circular silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a border circular areas, described border circular areas comprises multiple S2 region, the periphery of described border circular areas is the insulating flange region of 0.5-1.5 millimeter, described S2 region is the region of permeation electrode slurry, and the join domain between described S2 region is covering part, i.e. the region of impermeable electrode slurry.

Electrode slurry is moved to and drafts printing zone, be stained with point electrode slurry on silk screen with specific purpose tool simultaneously, then move scraper dedicated and implement printing slurry work.By the potsherd that prints electrode slurry after drying, put into tunnel cave road and carry out electrode material and separate out sintering.Fig. 7 is the structural representation of the MOV potsherd after sintering, namely completes the work of potsherd surface metalation after sintering.In the figure 7, S1 and S2 is that electrode separates out region, S1 or S2 can be (can be circular and rectangle) geometric figure arbitrarily, and the layout quantity of S1 or S2 on potsherd is at 3-400.

Operation principle: collection skin (the become skin) effect in electricity is defined as the alternating current in conductor, the current density near conductive surface place is greater than the phenomenon of conductor current density.When MOV potsherd passing through larger alternating current, according to collection skin (become skin) effect principle, current density near MOV potsherd electrode edge place will be greater than the current density at MOV potsherd inside center place, in fact the electric current at MOV potsherd inside center place is very little, and current convergence is at the electrode edge place closing on MOV potsherd.The local big current that front surface flows to anti-surface, anti-surface flows to front surface of above-mentioned MOV potsherd on average can be shared in multiple S1 region on the front surface of above-mentioned MOV potsherd and anti-surface or S2 region, above-mentioned local big current is decomposed into some small area analysis, scattered by the heat energy that above-mentioned local big current causes, the current density of the metal electrode film that the front surface of whole MOV potsherd is connected with front surface is balanced.

Therefore, the higher power current flowing into MOV potsherd due to a variety of causes such as power supply transien overvoltage faults can spread by the program, SPD can not be flow through due to higher power current substantially and lost efficacy with on fire.Even if because the power current flowing through SPD is too large, cause the current density on the surface of whole MOV potsherd too large, SPD is caused to lose efficacy, now, the current density of the metal electrode film of the surface connection of MOV potsherd is also enough large, and causing disconnector to play a role, SPD and other devices separate by disconnector, thus the fire that effectively prevent SPD inefficacy and cause.

The electrode slurry of the second MOV potsherd that this embodiment provides is coated with, sintering scheme is as follows:

The pattern schematic diagram of a kind of silk screen that this embodiment provides as shown in Figure 8, according to Zinc Oxide Ceramic for Varistors chip size, according to the size of square MOV potsherd, make latticed square silk screen, the surface of this square silk screen comprises multiple S1 region, arrange S3 region at the central point on the surface of described square silk screen, the area in described S3 region is greater than the area in described S1 region; Or, according to the size of circular MOV potsherd, make latticed circular silk screen, the surface of this circular silk screen comprises multiple S2 region, arrange S4 region at the central point on the surface of described circular silk screen, the area in described S4 region is greater than the area in described S2 region.Above-mentioned S1, S3 or S2, S4 can be (can be circular and rectangle) geometric figures arbitrarily, and the every face of quantity of S1 and S2 is at 3-400, and the every face of quantity of S3 and S4 only has 1.As shown in Figure 8, silk screen has covering part and non-covering part, the object of covering part does not allow electrode slurry permeate, and the object of covering part allows electrode slurry infiltration.S1, S2, S3, S4 are the regions of permeation electrode slurry, and the join domain between the join domain between the join domain between the join domain between adjacent S1 region, adjacent S2 region, S1 and S3, S2 and S4 is the region of impermeable electrode slurry.

Described square silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the central point of described square region arranges S3 region, the periphery of described square region is the insulating flange region of 0.5-1.5 millimeter, described S1, S3 region is the region of permeation electrode slurry, and the join domain between the join domain between described S1 region, described S1 and S3 is the region of impermeable electrode slurry.Or, described circular silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a border circular areas, described border circular areas comprises multiple S2 region, the central point of described border circular areas arranges S4 region, the periphery of described border circular areas is the insulating flange region of 0.5-1.5 millimeter, described S2, S4 region is the region of permeation electrode slurry, and the join domain between the join domain between described S2 region, described S2 and S4 is the region of impermeable electrode slurry.

Above-mentioned S1, S2, S3, S4 can be (can be circular and rectangle) geometric figures arbitrarily.S3 or S4 just with on reverse side respectively occurs 1 time at potsherd, and the quantity of S1 or S2 in potsherd one side is at 2-400.In fig. 8, silk screen has covering part and non-covering part, the object of covering part does not allow electrode slurry permeate, and the object of covering part allows electrode slurry infiltration.

By electrode slurry to drafting printing zone, being stained with point electrode slurry on silk screen with specific purpose tool, then moving the printing work that scraper dedicated carries out electrode slurry.By the potsherd that prints electrode slurry after drying, put into tunnel cave road and carry out electrode material and separate out sintering.Fig. 9 is the structural representation of the MOV potsherd after sintering, namely completes the work of potsherd surface metalation after sintering.In Fig. 10, S1, S2, S3, S4 are that electrode slurry separates out region.

Operation principle: by the process of MOV potsherd surface metalation, the front surface of MOV potsherd and anti-surface are divided into multiple S1 region, the center in (S1 region) arranges S3 region on potsherd obverse and reverse.Prove through lot of experiments, as long as the area of S3 is greater than the area of S1, then S3 is that central point electric current drafts breakdown region, the front surface of MOV potsherd flows to anti-surface, when anti-surface flows to the local big current of front surface, breakdown point is all near S3, as long as S3 region, breakdown point center of impact, according to skin effect principle, then can share above-mentioned local big current by the multiple S1 zone levelings on the front surface of above-mentioned MOV potsherd and anti-surface, above-mentioned local big current is decomposed into some small area analysis, the heat energy that above-mentioned local big current causes is scattered, the front surface of whole MOV potsherd is balanced with the current density of the anti-surperficial metal electrode film be connected.

In like manner, the front surface of MOV potsherd and anti-surface are divided into multiple S2 region, on potsherd obverse and reverse, the center in (S2 region) arranges S4 region.Prove through lot of experiments, as long as the area of S4 is greater than the area of S2, then S4 is that central point electric current drafts breakdown region, the front surface of MOV potsherd flows to anti-surface, when anti-surface flows to the local big current of front surface, breakdown point is all near S4, as long as S4 region, breakdown point center of impact, according to skin effect principle, then can share above-mentioned local big current by the multiple S2 zone levelings on the front surface of above-mentioned MOV potsherd and anti-surface, above-mentioned local big current is decomposed into some small area analysis, the heat energy that above-mentioned local big current causes is scattered, the front surface of whole MOV potsherd is balanced with the current density of the anti-surperficial metal electrode film be connected.

The heat energy that local big current on the surface of MOV potsherd more can cause than the first scheme above-mentioned by the program scatters, and prevents SPD to lose efficacy and the better effects if of fire that causes.

The electrode slurry of the third MOV potsherd that this embodiment provides is coated with, sintering scheme is as follows:

High resistant glaze is the electronic product slurry that a kind of resistivity is very high, is printed on potsherd, through the sintering of design temperature, high-resistance material is separated out by potsherd, plays the effect of insulation.Can be printed electrode the methods such as slurry, high resistant glaze slurry employing mask print process, metallikon, Dipcoat method, spray impregnation rubbing method, print-on coating method, curved surface screen printing rubbing method, be coated on flaky pottery sheet above and below, electrode slurry takes the electrode of zinc oxide varistor, appointed area on high resistant glaze slurry reduction MOV potsherd, plays minor insulation effect.

The pattern schematic diagram of a kind of high resistant glaze slurry silk screen that this embodiment provides as shown in Figure 10, as shown in Figure 10 according to the size of square MOV potsherd, makes latticed square silk screen, the obverse and reverse of this square silk screen comprises multiple S1 region; Or, according to the size of circular MOV potsherd, make latticed circular silk screen, the obverse and reverse of this circular silk screen comprise multiple S2 region.Above-mentioned S1 or S2 can be (can be circular and rectangle) geometric figure arbitrarily, and the quantity of S1 and S2 is at 3-400.As shown in figure 11, silk screen has covering part and non-covering part, the object of covering part does not allow high resistant glaze slurry penetration, and the object of covering part allows high resistant glaze slurry penetration.

With the difference of such scheme 1, scheme 2 be: the program prints high resistant glaze slurry on MOV potsherd.High resistant glaze slurry is the lead glaze material that a kind of resistivity is very high, after 700-1000 degree Celsius of sintering, is attached on MOV potsherd, and after sintering, the insulation resistance of high resistant glaze slurry is more than 1 megohm.High resistant glaze slurry sintering temperature is higher than electrode slurry sintering temperature.

High resistant glaze slurry is moved to and is drafting printing zone, be stained with a high resistant glaze slip with specific purpose tool and expect on silk screen, then move the printing work that scraper dedicated carries out high resistant glaze slurry, print the potsherd of high resistant glaze slurry, put into tunnel cave road after oven dry and sinter.Figure 11 is the schematic diagram of the MOV potsherd having printed high resistant glaze slurry.

Then, again the square silk screen made is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the periphery of described square region is the insulating flange region of 0.5-1.5 millimeter, described S1 region is the region of permeation electrode slurry, and the join domain between described S1 region is the region of impermeable electrode slurry; Or, described circular silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a border circular areas, described border circular areas comprises multiple S2 region, the periphery of described border circular areas is the insulating flange region of 0.5-1.5 millimeter, described S2 region is the region of permeation electrode slurry, and the join domain between described S2 region is covering part, i.e. the region of impermeable electrode slurry.

By electrode slurry to drafting printing zone.Be stained with point electrode slurry on silk screen with specific purpose tool simultaneously, then move the printing work that scraper dedicated carries out electrode slurry, Figure 12 for printing electrode slurry and after oversintering, the schematic diagram of potsherd (just and reverse side) precipitating metal electrode on the surface.

Operation principle is as follows: collection skin (the become skin) effect in electricity is defined as the alternating current in conductor, and the current density near conductive surface place is greater than the phenomenon of conductor current density.When MOV potsherd passing through larger alternating current, according to collection skin (become skin) effect principle, current density near MOV potsherd electrode edge place will be greater than the current density at MOV potsherd inside center place, in fact the electric current at MOV potsherd inside center place is very little, and current convergence is at the electrode edge place closing on MOV potsherd.The local big current that front surface flows to anti-surface, anti-surface flows to front surface of above-mentioned MOV potsherd on average can be shared in multiple S1 region on the front surface of above-mentioned MOV potsherd and anti-surface or S2 region, above-mentioned local big current is decomposed into some small area analysis, scattered by the heat energy that above-mentioned local big current causes, the current density of the metal electrode film that the front surface of whole MOV potsherd is connected with front surface is balanced.

In the program, because above-mentioned high resistant glaze slurry has good insulation effect, insulate between the multiple S1 region on the surface of MOV potsherd or S2 region, above-mentioned multiple S1 region or S2 zone leveling share the better effects if of local big current.

The electrode slurry of the 4th kind of MOV potsherd that this embodiment provides is coated with, sintering scheme is as follows:

Electrode slurry is metallic conductor electron-like ceramic electrode slurry, and many employings are at present electric conducting material with argent and are mixed with the electrode slurry of other organic material.High resistant glaze is the electronic product slurry that a kind of resistivity is very high, is printed on potsherd, through the sintering of design temperature, high-resistance material is separated out by potsherd, plays the effect of insulation.Can be printed electrode the methods such as slurry, high resistant glaze slurry employing mask print process, metallikon, Dipcoat method, spray impregnation rubbing method, print-on coating method, curved surface screen printing rubbing method, be coated on flaky pottery sheet above and below, electrode slurry takes the electrode of zinc oxide varistor, appointed area on high resistant glaze slurry reduction-oxidation zinc Varistor ceramics sheet, plays minor insulation effect.

The pattern schematic diagram of a kind of high resistant glaze silk screen that this embodiment provides as shown in figure 13, according to Zinc Oxide Ceramic for Varistors chip size, according to the size of square MOV potsherd, make latticed square silk screen, the surface of this square silk screen comprises multiple S1 region, arrange S3 region at the central point on the surface of described square silk screen, the area in described S3 region is greater than the area in described S1 region; Or, according to the size of circular MOV potsherd, make latticed circular silk screen, the surface of this circular silk screen comprises multiple S2 region, arrange S4 region at the central point on the surface of described circular silk screen, the area in described S4 region is greater than the area in described S2 region.Above-mentioned S1 or S2 can be (such as circular and rectangle) geometric figure arbitrarily, and the quantity of S1 and S2 is at 3-400.As shown in figure 13, silk screen has covering part and non-covering part, the object of covering part does not allow high resistant glaze slurry penetration, and the object of covering part allows high resistant glaze slurry penetration.

High resistant glaze slurry is the lead glaze material that a kind of resistivity is very high, after 700-1000 degree Celsius of sintering, is attached on MOV potsherd, after sintering more than insulation resistance 1 megohm.

Above-mentioned S3 or S4 is each on potsherd obverse and reverse to be occurred 1 time, and the quantity of S1 or S2 on potsherd arbitrarily one side is at 2-400.In fig. 13, silk screen has covering part and non-covering part, the object of covering part does not allow high resistant glaze slurry penetration, and the object of covering part allows high resistant glaze slurry penetration.S1, S2, S3, S4 are the regions of permeation electrode slurry, and the join domain between the join domain between the join domain between the join domain between adjacent S1 region, adjacent S2 region, S1 and S3, S2 and S4 is the region of impermeable electrode slurry.

High resistant glaze slurry is moved to and is drafting printing zone.Be stained with a high resistant glaze slip with specific purpose tool expects on silk screen simultaneously, then moves the printing work that scraper dedicated carries out high resistant glaze slurry, prints the potsherd of high resistant glaze slurry, puts into tunnel cave road and sinter after oven dry.S1, S2, S3, S4 are masked areas, and S1, S2, S3, S4 can be (can be circular and rectangle) geometric figures arbitrarily, and the layout quantity of S1 or S2 on potsherd is at 2-400.After 700-1000 degree Celsius of sintering, high resistant glaze slurry is attached to Zinc Oxide Ceramic for Varistors sheet, and Figure 14 is the schematic diagram of the MOV potsherd having printed high resistant glaze slurry.

By electrode slurry to drafting printing zone.Be stained with point electrode slurry on silk screen with specific purpose tool simultaneously, then move the printing work that scraper dedicated carries out electrode slurry, Figure 15 for printing electrode slurry and after oversintering, the schematic diagram of potsherd (just and reverse side) precipitating metal electrode on the surface.

The operation principle of the program is as follows: the front surface of MOV potsherd and anti-surface are divided into multiple S1 region, and on potsherd obverse and reverse, the center in (S1 region) arranges S3 region.Prove through lot of experiments, as long as the area of S3 is greater than the area of S1, then S3 is that central point electric current drafts breakdown region, the front surface of MOV potsherd flows to anti-surface, when anti-surface flows to the local big current of front surface, breakdown point is all near S3, as long as S3 region, breakdown point center of impact, according to skin effect principle, then can share above-mentioned local big current by the multiple S1 zone levelings on the front surface of above-mentioned MOV potsherd and anti-surface, above-mentioned local big current is decomposed into some small area analysis, the heat energy that above-mentioned local big current causes is scattered, the front surface of whole MOV potsherd is balanced with the current density of the anti-surperficial metal electrode film be connected.In the program, because above-mentioned high resistant glaze slurry has good insulation effect, insulate between the multiple S1 region on the surface of MOV potsherd or S2 region, above-mentioned multiple S1 region or S2 zone leveling share the better effects if of local big current.

In like manner, the front surface of MOV potsherd and anti-surface are divided into multiple S2 region, on potsherd obverse and reverse, the center in (S2 region) arranges S4 region.Prove through lot of experiments, as long as the area of S4 is greater than the area of S2, then S4 is that central point electric current drafts breakdown region, the front surface of MOV potsherd flows to anti-surface, when anti-surface flows to the local big current of front surface, breakdown point is all near S4, as long as S4 region, breakdown point center of impact, according to skin effect principle, then can share above-mentioned local big current by the multiple S2 zone levelings on the front surface of above-mentioned MOV potsherd and anti-surface, above-mentioned local big current is decomposed into some small area analysis, the heat energy that above-mentioned local big current causes is scattered, the front surface of whole MOV potsherd is balanced with the current density of the anti-surperficial metal electrode film be connected.In the program, because above-mentioned high resistant glaze slurry has good insulation effect, insulate between the multiple S1 region on the surface of MOV potsherd or S2 region, above-mentioned multiple S1 region or S2 zone leveling share the better effects if of local big current.

The heat energy that local big current on the surface of MOV potsherd more can cause than above-mentioned first scheme by the program scatters, and prevents SPD to lose efficacy and the better effects if of fire that causes.

11. testing electrical properties

MOV potsherd after electrode sintering, if electrode slurry is with silver for main sill, then go out through sintering and reducing the dispensing area that silver strip is adsorbed on MOV potsherd, above-mentioned silver strip is called MOV silver strip, and can carry out classical electrical at MOV silver strip place, both sides can test.

12. metal electrode films

Metal electrode film uses copper alloys metal usually, and its copper content is not less than 55 percent of total amount, metal electrode film thickness 0.56-2 millimeter.Metal electrode film electroplate or electroplating surfaces with tin or copper plating treatment, metal electrode sheet material: binary, ternary and multicomponent alloy that copper and aluminium, tin, lead, manganese, iron, nickel, zinc, tungsten form.

13. connection soft metals:

Connection soft metal in the embodiment of the present invention is polynary softening alloy, this polynary softening alloy is the synthetic of multiplexed combination arbitrarily in Main Ingredients and Appearance and microcomponent, above-mentioned Main Ingredients and Appearance is: bismuth, tin, lead, and microcomponent is: zinc, cadmium, indium, mercury, gallium, cobalt, selenium etc.

The temperature range that polynary softening alloy is softening: 95-180(degree Celsius), hardness is not less than 20HBS.

14. resin-encapsulated and encapsulating material method 1:

Be broken into (granularity: 40-80 order) particle after the calcining of natural stone diamond stone, and form with inorganic fire-retarded mixed with resin according to nine ten ten to percent 2 percent of total weight.Average encapsulating thickness is not less than 2 millimeters, and after encapsulating solidification, Mohs' hardness is not less than 4.5.

15. resin-encapsulated and encapsulating material method 2:

Be broken into (granularity: 40-80 order) particle after the calcining of Naxas emery stone, and form with inorganic fire-retarded mixed with resin according to nine ten ten to percent 2 percent of total weight.Average encapsulating thickness is not less than 2 millimeters, and after encapsulating solidification, Mohs' hardness is not less than 4.5.

16. zinc oxide varistor class voltage restricted type low-voltage distribution SPD compound formulations 1:

Respectively SPD plastic fittings, metalwork accessory mechanical package are got up according to drawing, then according to drawing, the plastic fittings of SPD and metalwork accessory mechanical package are got up.MOV finished product is contained in SPD plastic casing, sometimes needs to carry out secondary resin encapsulating and embedding process to MOV finished product.Polynary soft metal connects: when being connected with metal electrode film by the metal elastic force sheet in metal fittings, and connecting transition material is polynary soft metal.

Metal elastic force sheet and polynary soft metal constitute the disconnector of SPD.Figure 16 is the structural representation of single the zinc oxide varistor class voltage restricted type low-voltage distribution SPD comprising disconnector.

17. zinc oxide varistor class voltage restricted type low-voltage distribution SPD compound formulations 2:

Respectively SPD plastic fittings, metalwork accessory mechanical package are got up according to drawing, then according to drawing, the plastic fittings of SPD and metalwork accessory mechanical package are got up.MOV finished product is contained in SPD plastic casing, sometimes needs to carry out secondary resin encapsulating and embedding process to MOV finished product.Soft metal connects: when being connected with metal electrode film by the metal elastic force sheet in metal fittings, and connecting transition material is polynary soft metal.Metal elastic force sheet and polynary soft metal constitute the disconnector of SPD.

As shown in figure 17, the schematic diagram of the zinc oxide varistor class voltage restricted type low-voltage distribution SPD of 3 (or many) MOV finished product parallel combination one-tenth as shown in figure 18 for the schematic diagram of the zinc oxide varistor class voltage restricted type low-voltage distribution SPD of 2 MOV finished product parallel combination one-tenth.

Those skilled in the art will be understood that the application type of above-mentioned square MOV potsherd, square silk screen, round ceramic sheet, circular silk screen is only citing; the application type of other potsherds that are existing or that may occur from now on, silk screen is as being applicable to the embodiment of the present invention; also within scope should being included in, and this is contained at this with way of reference.

One of ordinary skill in the art will appreciate that: accompanying drawing is the schematic diagram of an embodiment, the module in accompanying drawing or flow process might not be that enforcement the present invention is necessary.

One of ordinary skill in the art will appreciate that: the module in the equipment in embodiment can describe according to embodiment and be distributed in the equipment of embodiment, also can carry out respective change and be arranged in the one or more equipment being different from the present embodiment.The module of above-described embodiment can merge into a module, also can split into multiple submodule further.

In sum, the front surface of MOV potsherd and anti-surface are divided into multiple boxed area by utilizing latticed silk screen by the embodiment of the present invention, the big current that the surface of MOV potsherd is flow through can be decomposed into some small area analysis by above-mentioned multiple boxed area, the heat energy that above-mentioned local big current causes is scattered, SPD can not be flow through due to higher power current substantially and lost efficacy with on fire.Even if because the power current flowing through SPD causes too greatly SPD to lose efficacy, now, disconnector will play a role, SPD and other devices will be separated, thus the fire that effectively prevent SPD inefficacy and cause.

The embodiment of the present invention arranges S3 region by the center on MOV potsherd positive and negative, or the center on positive and negative arranges S4 region, the breakdown point of MOV potsherd can be directed into the center on surface, such that the multiple boxed area on the surface of MOV potsherd are easier scatters the heat energy that local big current causes.

The embodiment of the present invention by printing high resistant glaze slurry on the surface of MOV potsherd, utilize the insulation effect that high resistant glaze slurry is good, insulate between the multiple boxed area on the surface of MOV potsherd, make the multiple boxed area on the surface of MOV potsherd on average share the better effects if of local big current.The voltage restricted type low-voltage distribution SPD of the embodiment of the present invention reaches the effect stopping to catch fire substantially.

On September 1st, 2012 starts; start in the whole world to perform IEC61643-11-2011 " low tension surge protector the tenth part: low-voltage distribution system surge protector performance requirement and test method " standard; in the complementary testing of this standard 8.3.5.3.2SPD simulated failure pattern, to SPD, on fire and corresponding test has had clear stipulaties.It is reported that State Bureau of Technical Supervision drafts revision and started to revise new national standard in 2014; revision industry standard is also being fermented by other mechanisms of ministries and commissions simultaneously; and make great efforts to draw close with IEC61643-11-2011 " low tension surge protector the tenth part: low-voltage distribution system surge protector performance requirement and test method " standard, increase the complementary testing of SPD simulated failure pattern.Once new national standard revision supplements and implements IEC61643-11-2011 standard; the low-voltage distribution surge protector large-scale popularization being stopped catch fire (newly with and change original); to ensure personal safety (stop and reduce fire) and device security; so the low-voltage distribution surge protector consumption stopping from now on to catch fire is quite surprising, the present invention will produce very tremendous influence and Special Contributions to society, industry.The manufacturing cost of voltage restricted type low-voltage distribution SPD of the present invention is only 25% of following industry aggregate demand value.

Beneficial effect is analyzed:

1. building trade

The lightning surge protector (containing lightning protection box) of building trade is for power protection.Major product for power protection has general supply lightning protection box, independent power source lightning protection box, register one's residence end power supply electric surge protection module and the surge protector that becomes more meticulous.Wherein, hold power supply electric surge protection module for registering one's residence of indoor, become more meticulous surge protector.From civil buildings, at the end of 2011, Chinese cities and towns are real has house total amount 12,400,000,000 square metres, 60 square metres, house per family; In Future Ten year, China is expected at least newly-built 7,000 ten thousand ~ 8,000 ten thousand cover houses (average annual 700 ~ 8,000,000 covers).(" Chinese house target and the marketization "; house and town and country construction portion research in policy Chief of Centre Chen Huai the 67th China's reform international symposium speech) suppose that the New Dwelling of annual 50% directly adopts lightning surge protector; the In-Situ HPGe γ Spectrometry of 5% carries out lightning surge protector transformation; do not consider the market share that surge protector upgrades; the potential market scale of the indoor lightning surge protector of Science in Future in China civil buildings is 64.03 hundred million yuan; the lightning protection box market scale of civil buildings public domain, at 3.24 hundred million yuan, adds up to about 67.27 hundred million yuan.

2, communications industry

The communication technology has irreplaceable critical role in advanced information society.The communications industry is attached great importance to lightning protection, is the main application fields of lightning surge protector, and especially in the construction of mobile communication base station, lightning protection is the safety measure that must consider.Middle national flower ten years build up worldwide largest 2G mobile radio communication; have 1,260,000, base station (China Mobile 740,000; CHINAUNICOM 390,000; China Telecom 130,000); if an average mobile base station about has the surge protector of about 10000 yuan supporting, be altogether configured with the surge protector of about 12,600,000,000 yuan.According to the development plan of telecommunications industry, these base stations will within the quite a while from now on 3G network parallel running, the replacing of its lightning surge protective equipment and safeguarding also will continue.2009-2012, large telecom operators of China three are expected to be 1,700 hundred million yuan to 3G network construction investment, and in 3 years, investment will reach 8,000 hundred million yuan.China Telecom, CHINAUNICOM, three operators of China Mobile need newly-built NodeB about 600,000, lightning surge protection market capacity about 6,000,000,000 yuan.

3, IT application in enterprises field

The underlying hardware system of IT application in enterprises is made up of data center (DataCenter) and basic data link, wherein data center is the core of whole Enterprise Informatization system, and it carries the key functions of enterprise's production, operation, decision information Data Centralized Processing, storage, transmission, exchange.And computer terminal, data server and the network switching equipment, memory device, uninterruptible power system etc. are commonly referred to be the key equipment of data center.Lightning surge safeguard measure can effectively avoid equipment to be subject to interference or the destruction of thunder and lightning and other Operating Over Voltage Surge, ensures the fail safe of the person and information data.The routine configuration of data center machine room power supply lightning surge protector mainly contains: lightning protection box, intelligent rack lightning protection device, minimalist configuration approximately needs 20000 yuan.Nationwide above industrial enterprise 419284 family (by the end of 2009), have a data center machine room measuring and calculating according to each state-owned and large non-state industrial enterprises, the market capacity of surge protector is about 9,200,000,000 yuan.

4, security protection industry

Commission of Politics and Law of the CPC Central Committee, central comprehensive approach to the management of social problems office " notice about carrying out safe city construction in the whole nation " have been write instructions and transfer by the General Office of the State Council, and " safe city " builds the blowout having caused security protection industry.According to " Chinese security protection industry Eleventh Five-Year Development Plan planning ", China's security protection in 2010 will realize added value more than 80,000,000,000 yuan; IDC predicts, China's security protection video market, before 2012, can keep the compound growth rate of more than 20%.China security protection market always in continuous ascendant trend, has reached hundred billion market capacitys in recent years.What wherein have nearly half is engineering cost, comprises the buying universal product such as safe power supply and lightning protection or equipment.

5, railway, subway and field of urban rail

The electric railway traction net integrated lightning protection grounding system improvement project of ongoing national road bureau relates generally to station information chemoprevention thunder transformation project, 5T system thunder defending and ground connection, rail ground connection, protective wire (return wire) ground connection, equipotential link etc.Its in lightning protection year the market space about about 2,500,000,000, surge protector produce market space about has about 6.5 hundred million.

The reality of China's urban development provides the condition of reality also to the development of subway and urban light rail.At present, nearly 50 of the big city municipalization of China 50 ~ 1,000,000 population, nearly 40 of big city municipalization more than 1000000 populations, by the effort in recent years of Beijing, Shanghai, Guangzhou, the technological progress of underground railway and urban light rail and the production domesticization of equipment thereof have achieved huge progress, and this is that the development of the sector creates good condition.The year two thousand twenty, China will build up light railways about 2000 kilometers; Before the year two thousand fifty, will all build up the light railways of about 4500 kilometers.According to convention, lightning-protected product accounts for 0.1% of ratio between investments in field of track traffic, and namely the five-year China track traffic market lightning-protected product overall size is not less than 1,000,000,000 yuan, namely 200,000,000 yuan/year, surge protector capacity about 50,000,000.Railway and track traffic surge protector market capacity add up to about 700,000,000 yuan.

6, financial industry

China's Financial industry has achieved electronization and networking, is the department that microelectronic device is concentrated, has powerful demand to surge protector.Do not considering under the demand prerequisites such as building, security protection, we only calculate the lightning protection demand of the computer network system of bank and credit office's system, and the expense of each outlet configuration lightning protection box and the surge protector that becomes more meticulous is at least 10000 yuan.The configuration of Bank Headquarters or regional management centre computer data center module is at least more than 10 times of industrial enterprise's data center machine room minimum requirements, i.e. each machine room configuration surge protector about 200,000 yuan.

According to Banking Supervision Commission's annual report, banks of China industry financial institution has corporate organization 5634, outlet 19.3 ten thousand.The minimum market capacity of outlet's surge protector is at 6.76 hundred million yuan; if 5634 corporate organization only have 1 management centre computer data center module; minimum market capacity is 6.20 hundred million yuan, and only the computer network demand of bank finance mechanism is just more than 12.96 hundred million yuan.If consider securities broker company, insurance company, fund management company, the financial institutions such as trust company and stock exchange, the transaction place such as foreign exchange market and bond market, the surge protector market of financial sector is at least more than 1,500,000,000 yuan.The data system of existing financial industry is all configured with lightning surge protector as requested, and when not considering newly-increased site and data center, if every 3 years carry out upgrading once, the potential market capacity of annual lightning surge protector is more than 500,000,000 yuan.

The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.

Claims

1. a manufacture method for voltage restricted type low-voltage distribution surge protector, is characterized in that, comprising:

2. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 1, is characterized in that, the multiple boxed area on the front surface of described MOV potsherd and the multiple boxed area on anti-surface are in correspondence with each other.

3. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 1; it is characterized in that; when adopting silk screen to carry out coating electrode slurry; the shape of described silk screen and the shape of described MOV potsherd are identical, and the shape of described MOV potsherd comprises square, circular, triangle, ellipse, rhombus or irregularly shaped.

4. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 3, it is characterized in that, described method comprises:

According to the size of square zinc oxide varistor chip MOV potsherd, make latticed square silk screen, the surface of this square silk screen comprises multiple S1 region, described square silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the periphery of described square region is insulating flange region, described S1 region is the region of permeation electrode slurry, and the join domain between described S1 region is the region of impermeable electrode slurry;

Or;

According to the size of circular zinc oxide varistor chip MOV potsherd, make latticed circular silk screen, the surface of this circular silk screen comprises multiple S2 region, described circular silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a border circular areas, described border circular areas comprises multiple S2 region, the periphery of described border circular areas is insulating flange region, described S2 region is the region of permeation electrode slurry, and the join domain between described S2 region is the region of impermeable electrode slurry.

5. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 3, it is characterized in that, described method comprises:

According to the size of square zinc oxide varistor chip MOV potsherd, make latticed square silk screen, the surface of this square silk screen comprises multiple S1 region, at the central point on the surface of described square silk screen, S3 region is set, the area in described S3 region is greater than the area in described S1 region, described square silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the central point of described square region arranges S3 region, the periphery of described square region is insulating flange region, described S1, S3 region is the region of permeation electrode slurry, join domain between described S1 region, join domain between described S1 and S3 is the region of impermeable electrode slurry,

Or;

According to the size of circular zinc oxide varistor chip MOV potsherd, make latticed circular silk screen, the surface of this circular silk screen comprises multiple S2 region, at the central point on the surface of described circular silk screen, S4 region is set, the area in described S4 region is greater than the area in described S2 region, described circular silk screen is covered respectively on the obverse and reverse being buckled in described MOV potsherd, the front surface and anti-surface of described MOV potsherd mark off a border circular areas, described border circular areas comprises multiple S2 region, the central point of described border circular areas arranges S4 region, the periphery of described border circular areas is insulating flange region, described S2, S4 region is the region of permeation electrode slurry, join domain between described S2 region, join domain between described S2 and S4 is the region of impermeable electrode slurry.

6. the manufacture method of the voltage restricted type low-voltage distribution surge protector according to claim 4 or 5; it is characterized in that; the described slurry that prints electrode on the positive and negative surface of described MOV potsherd; the MOV potsherd having printed electrode slurry is dried, sintering processes; complete the surface metalation work of described MOV potsherd, comprising:

Point electrode slurry is stained with on the silk screen on the positive and negative surface of described MOV potsherd with specific purpose tool, the printing work of described electrode slurry is carried out by mobile scraper dedicated, the described MOV potsherd that will print electrode slurry, after drying, is put into tunnel kiln and is carried out electrode material precipitation sintering;

Or;

Be stained with on the silk screen that a high resistant glaze slip expects on the positive and negative surface of described MOV potsherd with specific purpose tool, the printing work of described high resistant glaze slurry is carried out by mobile scraper dedicated, by the described MOV potsherd that prints described high resistant glaze slurry after drying, put into tunnel kiln and sinter;

The described silk screen of button is covered on the front surface of the MOV potsherd more again after described sintering and anti-surface, be stained with on the silk screen on the positive and negative surface of the MOV potsherd after point electrode slurry to described sintering with specific purpose tool, the printing work of described electrode slurry is carried out by mobile scraper dedicated, the described MOV potsherd that will print described electrode slurry, after drying, is put into tunnel kiln and is carried out electrode material precipitation sintering.

7. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 6, it is characterized in that, described method also comprises:

Adopt the main material of zinc oxide configuration MOV, the material of described MOV is compressing after adding adhesive mixing, and after sintering, pile up and serve as interior lining panel in ball mill;

By dry-pressing formed for zinc oxide be cylinder, then setting degree Celsius under sintering setting hour after obtain zinc oxide cylinder, described zinc oxide cylinder is put into carry out in described ball mill described MOV material mixing.

8. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 6, it is characterized in that, described method also comprises:

By connection soft metal, the metal elastic force sheet in the metal fittings of voltage restricted type low-voltage distribution surge protector is connected with metal electrode film; described connection soft metal is polynary softening alloy, and this polynary softening alloy is the synthetic of Main Ingredients and Appearance and any multiplexed combination of microcomponent.

9. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 8; it is characterized in that; the Main Ingredients and Appearance of described polynary softening alloy comprises: bismuth, tin, lead, and the microcomponent of described polynary softening alloy comprises: zinc, cadmium, indium, mercury, gallium, cobalt, selenium.

10. the manufacture method of voltage restricted type low-voltage distribution surge protector according to claim 9, it is characterized in that, described method also comprises:

Secondary resin encapsulating and embedding process is carried out after using resin material to carry out metal pole piece welding, resin-encapsulate, assembling fittings to described MOV potsherd, described resin material for being broken into particle by after natural stone diamond stone or the calcining of Naxas emery stone, and forms with inorganic fire-retarded mixed with resin according to nine ten ten to percent 2 percent of total weight.

11. 1 kinds of voltage restricted type low-voltage distribution surge protectors, it is characterized in that, the front surface of the zinc oxide varistor chip MOV potsherd in described voltage restricted type low-voltage distribution surge protector and anti-surface comprise multiple boxed area, described boxed area is the region of permeation electrode slurry, and the join domain between described boxed area is the region of impermeable electrode slurry;

12. voltage restricted type low-voltage distribution surge protectors according to claim 11, it is characterized in that, the multiple boxed area on the front surface of described MOV potsherd and the multiple boxed area on anti-surface are in correspondence with each other.

13. voltage restricted type low-voltage distribution surge protectors according to claim 11; it is characterized in that; when adopting silk screen to carry out coating electrode slurry; the shape of described silk screen and the shape of described MOV potsherd are identical, and the shape of described MOV potsherd comprises square, circular, triangle, ellipse, rhombus or irregularly shaped.

14. voltage restricted type low-voltage distribution surge protectors according to claim 13, it is characterized in that, the front surface of square described MOV potsherd and anti-surface are covered and is buckled with square silk screen, the surface of described square silk screen comprises multiple S1 region, the front surface and anti-surface of square described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the periphery of described square region is insulating flange region, described S1 region is the region of permeation electrode slurry, join domain between described S1 region is the region of impermeable electrode slurry.

15. voltage restricted type low-voltage distribution surge protectors according to claim 13, it is characterized in that, the front surface of circular described MOV potsherd and anti-surface are covered and is buckled with circular silk screen, the surface of described circular silk screen comprises multiple S2 region, the front surface and anti-surface of the described MOV potsherd of circle mark off a border circular areas, described border circular areas comprises multiple S2 region, the periphery of described border circular areas is insulating flange region, described S2 region is the region of permeation electrode slurry, join domain between described S2 region is the region of impermeable electrode slurry.

16. voltage restricted type low-voltage distribution surge protectors according to claim 13, it is characterized in that, the front surface of square described MOV potsherd and anti-surface are covered and is buckled with square silk screen, the surface of described square silk screen comprises multiple S1 region, at the central point on the surface of described square silk screen, S3 region is set, the area in described S3 region is greater than the area in described S1 region, the front surface and anti-surface of square described MOV potsherd mark off a square region, described square region comprises multiple S1 region, the central point of described square region arranges S3 region, the periphery of described square region is insulating flange region, described S1, S3 region is the region of permeation electrode slurry, join domain between described S1 region, join domain between described S1 and S3 is the region of impermeable electrode slurry.

17. voltage restricted type low-voltage distribution surge protectors according to claim 13, it is characterized in that, the front surface of circular described MOV potsherd and anti-surface are covered and is buckled with circular silk screen, the surface of described circular silk screen comprises multiple S2 region, at the central point on the surface of the described circular silk screen of circle, S4 region is set, the area in described S4 region is greater than the area in described S2 region, the front surface and anti-surface of described MOV potsherd mark off a border circular areas, described border circular areas comprises multiple S2 region, the central point of described border circular areas arranges S4 region, the periphery of described border circular areas is insulating flange region, described S2, S4 region is the region of permeation electrode slurry, join domain between described S2 region, join domain between described S2 and S4 is the region of impermeable electrode slurry.

18. voltage restricted type low-voltage distribution surge protectors according to claims 14 or 15 or 16 or 17, is characterized in that:

The positive and negative surface of described MOV potsherd is first printed high resistant glaze slurry, at the described MOV potsherd that will print described high resistant glaze slurry after drying, put into after tunnel kiln sinters, the described silk screen of button is covered on the front surface of the MOV potsherd more again after described sintering and anti-surface, print electrode in the positive and negative surface of described MOV potsherd slurry, the described MOV potsherd that will print described electrode slurry, after drying, is put into tunnel kiln and is carried out electrode material precipitation sintering.

19. voltage restricted type low-voltage distribution surge protectors according to claim 18; it is characterized in that; the main material of described MOV comprises: zinc oxide; the material of described MOV is pressed shaping; and after sintering, pile up and serve as interior lining panel in ball mill, zinc oxide cylinder is put into the material mixing carrying out described MOV in described ball mill; described zinc oxide cylinder is by dry-pressing formed for zinc oxide for cylinder, then obtains after sintering setting hour under setting degree Celsius.

20. voltage restricted type low-voltage distribution surge protectors according to claim 18, it is characterized in that, the connecting material of the metal elastic force sheet in the metal fittings of described voltage restricted type low-voltage distribution surge protector and metal electrode film is for being connected with soft metal, described connection soft metal is polynary softening alloy, this polynary softening alloy is the synthetic of multiplexed combination arbitrarily in Main Ingredients and Appearance and microcomponent, the Main Ingredients and Appearance of described polynary softening alloy comprises: bismuth, tin, plumbous, the microcomponent of described polynary softening alloy comprises: zinc, cadmium, indium, mercury, gallium, cobalt, selenium.

21. voltage restricted type low-voltage distribution surge protectors according to claim 20; it is characterized in that; the material carrying out secondary resin encapsulating and embedding process after carrying out metal pole piece welding, resin-encapsulate, assembling fittings to described MOV potsherd is resin material; described resin material for being broken into particle by after natural stone diamond stone or the calcining of Naxas emery stone, and forms with inorganic fire-retarded mixed with resin according to nine ten ten to percent 2 percent of total weight.

22. voltage restricted type low-voltage distribution surge protectors according to claim 18, is characterized in that, described voltage restricted type low-voltage distribution surge protector comprises zinc oxide varistor class voltage restricted type low-voltage distribution surge protector.