JP2000003775A - Chip type surge absorber and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chip type surge absorber, having a discharge chamber sealed with the gas and having an improved lifetime by preventing the unevenness of product dimension for facilitating the sealing, and forming a main discharge electrode for performing the main discharge separately from a microgap for triggering the discharge. SOLUTION: This chip type surge absorber 10 is formed by laminating an aluminum board 1, formed with discharge electrodes 2 with a discharge gap 2A and an aluminum board 3 formed with a groove 4, and sealing both end surfaces with terminal electrodes 6A, 6B. With this structure, although the surge absorber 10 is formed into a chip shape, a microgap (the discharge gap 2A of the insulating board 2) triggers discharge, and the two-stage discharge that the discharge is extended to the sealing electrodes in the creeping discharge condition and that the arc discharge is formed between the sealing electrodes (terminal electrodes 11) can be performed. Discharge delay is thereby restricted, and moreover deterioration of the microgap can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surge absorber for absorbing a surge voltage and a method of manufacturing the surge absorber.
The present invention relates to a chip-type surge absorber having a pair of discharge electrodes and a sealed discharge chamber facing a discharge gap between the discharge electrodes, and a method of manufacturing the same.

[0002]

2. Description of the Related Art An electronic device such as a telephone or a modem is connected to a communication line, or a CRT drive circuit or the like which is susceptible to electric shock due to abnormal voltage such as lightning surge or static electricity. The following are examples of surge absorbers used to prevent equipment from being destroyed.

As shown in FIG. 4, a conductive film 42 having a micro gap 42 A is formed on the surface of a cylindrical insulator 41.
A glass tube 46 with cap electrodes 43 over both ends of an absorber element formed with
Glass tube sealed type micro gap type surge absorber sealed inside with sealed gas. As shown in FIG. 5, an alumina substrate 51 having a pair of discharge electrodes 51A and 51B formed on a plate surface with a discharge gap therebetween;
An alumina substrate 52 having an opening 52A for forming a discharge chamber formed in the center of the plate and an alumina substrate 53 having no opening (FIG. 5)
(A)) In this order, the surge absorber 54 is laminated and integrated using a glass paste, and the discharge chamber is set as a sealed gas atmosphere to form a surge absorber element 54.
55B formed chip type surge absorber (Fig. 5
(B)). As shown in FIG. 6, an alumina substrate 61 having a discharge electrode 61A formed on a plate surface and an alumina substrate 63 having a discharge electrode 63A formed on a plate surface are provided with an opening 62A for forming a discharge chamber in the center of the plate. Through the alumina substrate 62 (see FIG. 6).
(A)), a chip-type surge absorber (FIG. 6 (b)), which is laminated and integrated using a glass paste, forms a surge absorber body 64 in a discharge chamber as a sealed gas atmosphere, and has terminal electrodes 65A and 65B formed on both end surfaces thereof. )). As shown in FIG. 7, a chip-type surge absorber in which discharge electrodes 71A and 71B and terminal electrodes 72A and 72B are formed on one plate surface of an alumina substrate 71 and discharged in the atmosphere.

[0004]

The above-mentioned surge absorbers have the following problems.

[0005] In the glass-tube sealed micro-gap surge absorber, there is no discharge delay because the micro-gap triggers a discharge, and the main gap is formed between the cap electrodes. Although it has the advantage of excellent characteristics, it is manufactured by enclosing an absorber element and an encapsulating gas in a glass tube, so that the product has a cylindrical shape and is not suitable for surface mounting.
Further, in the case where the element is sealed in the glass tube in this manner, miniaturization cannot be achieved, and it is very difficult to manufacture a device having a length of 3 mm or less.

[0006] Like the chip type surge absorber of
When a discharge chamber is formed using a substrate having an opening, it is very costly to manufacture a mold for forming the opening in the substrate, and a mold is also required to change the size of the opening. It has to be fixed, and changing the shape requires a large cost. Further, since the three substrates are overlapped, there is a tendency that the overlapping state of the substrates after the sealing is displaced, and the external dimensions vary greatly. Furthermore, since the main discharge is also formed on the microgap due to the structure, the microgap is severely damaged and there is a problem in the life characteristics.

[0007] In the chip type surge absorber, since only the facing discharge electrodes are arranged so as to face the discharge space, there is no mechanism for triggering discharge due to field electron emission or the like. As a result, the discharge delay with respect to the impulse is not sufficiently reduced, and the surge absorption performance is inferior to that of the micro gap type surge absorber. In addition, since three substrates are stacked, there is a problem of variation in external dimensions as in the case of the chip-type surge absorber.

[0008] In the chip type surge absorber described above, the variation in external dimensions is small, but the discharge occurs in the atmosphere, so that the discharge starting voltage is not stabilized under the influence of humidity, pressure and dust of the atmosphere.

The present invention solves the above-mentioned problems, and is a chip-type surge absorber having a discharge chamber in a sealed gas atmosphere. The chip-type surge absorber can prevent variations in product dimensions and can be easily sealed. Moreover, it is an object of the present invention to provide a chip-type surge absorber capable of forming a main discharge electrode for performing a main discharge separately from a micro gap for triggering a discharge and improving a life characteristic, and a method of manufacturing the same. .

[0010]

According to the present invention, there is provided a chip-type surge absorber of the present invention comprising first and second insulating substrates arranged in a stack, and the second insulating substrate of the first insulating substrate plate surface. 1 provided with a discharge gap on the plate surface in contact with the conductive substrate
A pair of discharge electrodes, a discharge chamber forming groove provided to face the discharge gap on a plate surface of the second insulating substrate that contacts the first insulating substrate, The first and second
And a terminal electrode provided on a pair of opposed end faces of the laminated body of the insulating substrate, wherein the groove is formed on the pair of end faces of the second insulating substrate. , And the terminal electrode is provided so as to be electrically connected to the discharge electrode and to seal both end surfaces of the groove.

In the chip type surge absorber of the present invention,
A discharge chamber can be formed by the groove formed in the second insulating substrate. In addition, the discharge is triggered by the micro gap (discharge gap of the first insulating substrate) in spite of the chip shape, the discharge is extended to the sealing electrode in the form of creeping discharge, and the arc is formed between the sealing electrodes (terminal electrodes). Forming a discharge 2
Because step discharge can be performed, discharge delay is small,
In addition, it is possible to prevent deterioration of the micro gap and improve the life characteristics.

Since the chip-type surge absorber of the present invention has a small number of components (the number of boards), it can be manufactured easily with high accuracy while suppressing variations in external dimensions. In this case, it is only necessary to adjust the width of the tool for forming the groove, and the width can be easily changed.

The chip type surge absorber according to the present invention comprises a step of forming a conductive film for forming a discharge electrode and a micro gap for forming a discharge gap on one surface of a thin plate-shaped first insulating substrate; Forming an adhesive layer on one plate surface of the thin second insulating substrate and forming a plurality of grooves for forming a discharge chamber in parallel; A step of bonding an insulating substrate and the conductive film forming surface and the groove forming surface to face each other to form a laminate, cutting the laminate into strips in a direction orthogonal to the grooves, and forming a prismatic body. , Cutting the prism into a direction orthogonal to the longitudinal direction to obtain a chip, and forming a terminal electrode on the surface of the chip where the groove is exposed. According to the method for manufacturing a chip-type surge absorber of the present invention, it is possible to easily and efficiently manufacture the chip-type surge absorber with high dimensional accuracy and high productivity.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

FIGS. 1 and 2 are views showing an embodiment of a chip type surge absorber according to the present invention. FIG. 1 (a) is a perspective view, FIG. 1 (b) is an exploded perspective view, and FIG. (A) It is sectional drawing which follows CC line | wire of a figure.

In FIGS. 1 and 2, an alumina substrate 1 serving as a first insulating substrate has a discharge electrode 2 made of a conductive film formed on one plate surface with a discharge gap 2A.
On one surface of the alumina substrate 3 serving as a second insulating substrate, a discharge chamber forming groove 4 is formed so as to reach both end surfaces 3A and 3B of the alumina substrate 3.

The chip type surge absorber 1 shown in FIGS.
0, 10A is such that the alumina substrate 1 and the alumina substrate 3 are separated from each other by a discharge gap 2A
Are formed with terminal electrodes on both end surfaces of a laminated body 5 which is laminated so as to face the groove 4 of the alumina substrate 3. The chip type surge absorber 10 shown in FIG.
The terminal electrodes 6A and 6B are formed by applying a conductive paste by dipping or the like. In the terminal electrodes 6A, 6B formed by dipping, conductive protrusions 7A, 7B are formed from both ends of the groove 4 of the laminated body 5 by the conductive paste entering the groove 4, and the protrusions 7A are formed. , 7B serve as the main electrodes of the discharge.

Therefore, in the chip-type surge absorber 10 shown in FIG. 1, a discharge is triggered with good responsiveness in the discharge gap 2A of the discharge electrode 2, and this discharge is applied to the protrusions 7A and 7B in the form of surface discharge. And extend these projections 7A, 7B
By performing arc discharge between the discharge electrodes 2, the discharge gap 2
A is prevented from deteriorating.

The chip type surge absorber 10 shown in FIG.
In A, terminal electrodes are formed by attaching cap electrodes 8A and 8B to both ends of the laminate 5. Protrusions 9A and 9B serving as main discharge electrodes are formed in portions of the cap electrodes 8A and 8B facing the groove 4, and the projections 9A and 9B are used to form the same as the chip type surge absorber 10 shown in FIG. The effect can be obtained.

The protrusion width W of the protrusions 7A, 7B shown in FIG. 1 into the groove 4 and the protrusion width W of the protrusions 9A, 9B shown in FIG. 2 into the groove 4 are about 0.1 to 0.5 mm. Is preferred. However, the main arc discharge can be formed without the protrusion, and therefore, W = 0 may be employed.

In FIGS. 1 and 2, reference numeral 11 denotes a conductive film formed on the plate surface of the alumina substrate 1 so as to establish conduction between a discharge electrode and a terminal electrode. In 10 and 10A, since the conductive film 11 was formed by dipping both end surfaces of the laminated body 5, the conductive film 11 is also formed on the alumina substrate 3 side.

In FIG. 2, reference numeral 12 denotes an adhesive layer such as a glass or metal brazing material for bonding the cap electrodes 8A and 8B to both end surfaces of the laminated body 5 in a hermetically sealed state.

Such a chip type surge absorber is
It can also be manufactured by forming and bonding discharge electrodes and grooves using an alumina substrate that has been cut into small pieces in advance, and forming terminal electrodes on the obtained laminate. However, the manufacture of the chip-type surge absorber of the present invention is also possible. By manufacturing according to the method, a chip-type surge absorber having uniform dimensions can be manufactured with high productivity.

Next, an embodiment of a method of manufacturing a chip type surge absorber according to the present invention will be described with reference to FIG.

First, two thin alumina substrates 21,
After preparing an adhesive layer 22 such as a glass paste on the plate surface of one alumina substrate 21, a plurality of discharge chamber forming grooves 24 are formed on this surface (FIG. 3A). The groove 24 can be easily formed using a diamond saw or the like, and the groove width can be easily changed by changing the width of the tool. Note that the depth of the groove is preferably formed to be about 1/3 to 2/3 of the thickness of the substrate.

The surface of the other alumina substrate 22 is
An electrode film 25 is formed so as to correspond to the groove 23, and a micro gap (not shown) is formed in the electrode film 25 (FIG. 3B).

Then, the alumina substrate 21 and the alumina substrate 22 are brought into contact with the surface on which the groove 24 is formed and the surface on which the electrode film 25 is formed facing each other, and are fired in the air or in an inert gas such as N ₂ or Ar. (Fig. 3
(C)).

Next, the laminated body 26 is cut in a direction perpendicular to the groove 24 to form a prism 27 (FIG. 3D), and conductive films are formed on both sides of the prism 27 where the groove 23 is exposed. An electrode portion 28 for a terminal electrode is formed by applying paste or joining an electrode plate having a U-shaped cross section (FIG. 3E).

In forming the electrode portion 28, the grooves 24
The inside is filled with a filling gas (air may be used, but preferably filling gas), and firing is performed.

Thereafter, the prism 27 having the electrode portion 28 formed thereon is cut in a direction orthogonal to the longitudinal direction to manufacture the chip type surge absorber 10 or 10A (FIG. 3).
(F)).

In the present invention, any insulating substrate may be used as long as it is insulative and airtight. In addition to an alumina substrate, a substrate such as corundum, mullite, corundum mullite, acrylic, or bakelite may be used. it can. Usually, this substrate has a thickness of 0.3-1.
Those having a thickness of about 0 mm are used.

In the method shown in FIG. 3, the grooves 24 preferably have a width of about 0.1 to 1.0 mm and are formed at a pitch of about 0.1 to 3 mm. It is preferable to form a groove having a width of about 0.1 to 1.0 mm at the same pitch as the groove 24.

The electrode film 25 for the discharge electrode is made of Ti, T
iN, Ta, W, SiC, SnO ₂ , BaAl, Nb,
Si, C, Au, Ag, Pt, Pd, La, or a mixture of two or more of them, etc., having a film thickness of 0 .0 by sputtering, vapor deposition, ion plating, printing, printing, or the like.
It is preferable that the thickness be about 1 to 20 μm.

The microgap can be formed by laser cutting, screen mask, etching, etc., and usually, the electrode film 2 has a width of 0.1 μm to 2.8 mm.
5 to 1 to 100 are formed.

When the terminal electrodes are formed by applying a conductive paste, Ag, Pt, Au, Pd, Pb, Sn,
A conductive paste made of Ni, Fe, Cr, Al, C, Ru, Rh or a mixture of two or more of these is applied to the atmosphere (in the case of Ag, Pt, Au, Pd) or N ₂
In an inert gas such as (Ag, Pt, Au, Pd, Sn, N
i, Cr, Al, C, Ru, Rh). The heating at this time may be performed in either a tunnel furnace or a batch furnace. However, it is preferable to use a furnace in which the inside of the chip is sealed and the pressure in the furnace also rises as the temperature rises as the temperature rises. It is.

On the other hand, when the terminal electrode is formed by a cap electrode, the terminal electrode may be covered with a metal cap electrode and bonded by heating with a conductive adhesive. As a heating furnace in this case,
The same thing as the above can be used.

The gas to be filled is He, N ₂ , A
One of r, Ne, Xe, SF ₆ , CO ₂ , H _{2 and the} like can be used alone or as a mixture of two or more.
In addition, the pressure of the charged gas is usually 100 to 1
2,000 Torr.

[0038]

The present invention will be described more specifically below with reference to examples and comparative examples.

Example 1 Two alumina substrates 1 and 3 each having a thickness of 3 mm × 1.5 mm × 0.5 mm were prepared.
Consisting SnO ₂ film by sputtering the discharge electrode 2 (film thickness 1.
0 μm), and a discharge gap 2A having a width of 50 μm at the center.
Was formed. A groove 4 having a width of 0.5 mm is formed on the surface of the other alumina substrate 3.
A glass paste was applied to the surface of the forming plate, and the other alumina substrate 1 was brought into contact with the glass paste and fired at 800 ° C. to be integrated.

Thereafter, an Ag conductive paste was applied by dipping to form terminal electrodes 6A and 6B, and Xe gas (800 Torr) was sealed in the groove 4 to obtain a chip type surge absorber 10. The protrusion width W of the protrusions 7A, 7B of the terminal electrodes 6A, 6B of the chip type surge absorber 10 into the groove 4 is 0.5 mm.

The obtained chip type surge absorber 10 was examined for variations in discharge characteristics, external dimensions, and the like.
It was shown to. In addition, the DC discharge starting voltage (Vs) was obtained by applying the DC voltage and determining the voltage at the time when the discharge current became 1 mA. The impulse discharge starting voltage (Vimp) is 1.
2/50 μs, a voltage at which a voltage of 5 KV is applied to start discharging.

The life characteristics were determined to be good if the discharge starting voltage (Vs) did not increase even when the voltage was applied 500 times or more. The workability evaluated the ease of shape change.

Example 2 The procedure of Example 1 was repeated, except that the cap electrodes 8A and 8B made of Fe—Ni—Cr were hermetically bonded with a glass paste instead of applying the conductive paste in forming the terminal electrodes. The chip type surge absorber 10A was manufactured in the same manner as above, and the evaluation was performed in the same manner. The results are shown in Table 1. In addition,
Cap electrode 8 of this chip type surge absorber 10A
A, the projection width W of the projections 9A, 9B of the projections 9A, 9B into the groove 4 is 0.
5 mm.

Embodiment 3 The chip type surge absorber 10 shown in FIG. 1 was manufactured according to the method shown in FIG.

First, 49.5 mm × 57.6 mm × 0.
Two alumina substrates 21 and 22 having a thickness of 5 mm are prepared, and a glass paste is applied to the surface of one of the alumina substrates 21 to form an adhesive layer 23, and then a width of 0.5 mm and a depth of 0.
Thirty-three 25-mm grooves 24 were formed at a pitch of 1.5 mm. Further, an SnO ₂ film (1.0 μm thick) is formed by sputtering on the plate surface of the other alumina substrate 22 to form electrode films 25 having a width of 0.5 mm at a pitch of 1.5 mm.
5 in the extending direction, 3 mm pitch and 50 μm width
Were formed one by one.

The two alumina substrates 21 and 22 are overlapped,
The resulting laminate 26 is baked at 900 ° C. in the air and adhered.
Is cut into a width of 3.0 mm to obtain a prism 27, an Ag conductive paste is applied to both side surfaces of the prism 27, and heated in the air to form an electrode portion 28 and Xe (800T).
orr). Thereafter, the prism 27 was cut into a chip having a length of 1.5 mm to obtain a chip-type surge absorber 10.

This chip-type surge absorber 10 was evaluated in the same manner as in Example 1, and the results are shown in Table 1.

The chip type surge absorber 10
The protrusion width W of the protrusions 7A, 7B of the terminal electrodes 6A, 6B into the groove 4 is 0.5 mm.

Example 4 In Example 3, when forming the terminal electrodes, instead of applying a conductive paste, an electrode plate having a U-shaped cross section made of Fe-Ni-Cr was hermetically bonded with a glass paste to form a cap electrode. A chip type surge absorber 10A was manufactured in the same manner as above except that was attached, and the evaluation was performed in the same manner. The results are shown in Table 1. The projections 9A of the cap electrodes 8A, 8B of the chip type surge absorber 10A,
The projection width W of the 9B into the groove 4 is 0.5 mm.

Comparative Example 1 A glass tube sealed type microgap surge absorber shown in FIG. 4 was manufactured.

First, an alumina cylindrical insulator 41 (having a diameter of 1)
mm × 3 mm length), a SiO ₂ film 42 is deposited on the surface,
Cap electrodes 43 were pressed into both ends. The central portion of the SiO ₂ film was cut in the circumferential direction to form a microgap 42A having a width of 50 μm, which was used as an absorber element. The device was inserted into the glass tube 46 with the element sandwiched by the slag lead 45, and the inside of the glass tube was sealed with Xe (800 Torr).

The obtained surge absorber was evaluated in the same manner as in Example 1, and the results are shown in Table 1.

Comparative Example 2 A chip type surge absorber shown in FIG. 5 was manufactured.

Three alumina substrates 51, 52 and 53 each having a thickness of 3 mm × 1.5 mm × 0.5 mm are prepared, and a pair of Si substrates are provided on the alumina substrate 51 with a discharge gap of 50 μm wide.
Discharge electrodes 51A and 51B made of an O ₂ film were formed. The alumina substrate 52 has an opening 52A having a diameter of 0.5 mm.
Was formed. Then, three alumina substrates 51, 52,
53 is bonded by heating with a glass paste and Xe (80
0 Torr), and terminal electrodes 55A and 55B were further formed.

The obtained chip type surge absorber was evaluated in the same manner as in Example 1, and the results are shown in Table 1.

Comparative Example 3 A chip type surge absorber shown in FIG. 6 was manufactured.

Three alumina substrates 61, 62, 63 having a thickness of 3 mm × 1.5 mm × 0.5 mm are prepared, and an aperture 62 A having a diameter of 0.5 mm is formed in the alumina substrate 62. On the other hand, discharge electrodes 61A and 63A made of a SiO ₂ film were formed. Then, the three alumina substrates 61, 62, and 63 are bonded in the same manner as in Comparative Example 2, Xe (800 Torr) is sealed, and the terminal electrodes 6 are formed.
5A and 65B were formed.

The obtained chip-type surge absorber was evaluated in the same manner as in Example 1, and the results are shown in Table 1.

Comparative Example 4 A chip type surge absorber shown in FIG. 7 was manufactured.

In the same manner as in Comparative Example 2, the discharge electrodes 71A and 71A
The terminal electrodes 72A, 7A are provided on the alumina substrate 71 on which 1B is formed.
2B was formed.

The obtained chip-type surge absorber was evaluated in the same manner as in Example 1, and the results are shown in Table 1.

[0062]

[Table 1]

[0063]

As described in detail above, according to the chip-type surge absorber of the present invention, since it is in the form of a chip, it can be easily reduced in size and has excellent mountability. Since the number of components is small, it is possible to suppress variations in external dimensions and to manufacture with high accuracy. By adjusting the groove width, the dimensions inside the discharge chamber can be changed, resulting in excellent workability. Discharge can be triggered by the micro gap with good responsiveness, and then arc discharge can be formed by the main discharge electrode, so that the discharge delay is small and the life characteristics are excellent. Such an excellent effect can be obtained.

According to the method of manufacturing the chip-type surge absorber of the present invention, such a chip-type surge absorber of the present invention can be manufactured with high productivity and high accuracy.

[Brief description of the drawings]

FIG. 1 is a view showing an embodiment of a chip-type surge absorber according to the present invention, wherein FIG. 1 (a) is a perspective view, FIG. 1 (b) is an exploded perspective view, and FIG. It is sectional drawing which follows the -C line.

FIG. 2 is a view showing an embodiment of a chip type surge absorber according to the present invention, wherein FIG. 2 (a) is a perspective view, FIG. 2 (b) is an exploded perspective view, and FIG. It is sectional drawing which follows the -C line.

FIG. 3 is a perspective view showing an embodiment of a method for manufacturing a chip type surge absorber of the present invention.

FIG. 4 is a cross-sectional view showing a surge absorber according to a comparative example.

FIG. 5 is a perspective view showing a chip type surge absorber shown in a comparative example.

FIG. 6 is a perspective view showing a chip type surge absorber shown in a comparative example.

FIG. 7 is a perspective view showing a chip-type surge absorber shown in a comparative example.

[Explanation of symbols]

 1,3 Alumina substrate 2 Discharge electrode 2A Discharge gap 4 Groove 5 Laminated body 6A, 6B Terminal electrode 7A, 7B Projection 8A, 8B Cap electrode 9A, 9B Projection 10,10A Chip type surge absorber 11 Conductive film 12 Adhesive layer 21 , 22 Alumina substrate 23 Adhesive layer 24 Groove 25 Electrode film 26 Laminated body 27 Prismatic body 28 Electrode part

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Nobuya Saruwatari 2270 Yokose Yokoze-cho, Chichibu-gun, Saitama Prefecture Inside the Electrotechnical Laboratory of Mitsubishi Materials Corporation (72) Inventor Masami Koshimura 2270 Yokoze Yokoze-cho, Yokoze-cho, Chichibu-gun, Saitama Mitsubishi Materials Corporation

Claims (2)

[Claims] 1. A discharge gap is formed between a first and a second insulating substrate arranged in a stack and a plate surface of the first insulating substrate that is in contact with the second insulating substrate. A pair of discharge electrodes provided apart from each other, and a discharge chamber provided on a plate surface of the second insulating substrate that is in contact with the first insulating substrate so as to face the discharge gap. A chip-type surge absorber comprising: a forming groove; and terminal electrodes provided on a pair of opposed end faces of the stacked body of the first and second insulating substrates. The terminal electrode is provided so as to reach the pair of end surfaces of the second insulating substrate, and the terminal electrode is provided so as to conduct to the discharge electrode and seal both end surfaces of the groove. Characterized chip type surge absorber. 2. A method for manufacturing a chip-type surge absorber according to claim 1, wherein a conductive film for forming a discharge electrode and a discharge gap are formed on one surface of the thin plate-shaped first insulating substrate. Forming an adhesive layer on one surface of a second insulating substrate having a thin plate shape, and forming a plurality of grooves for forming a discharge chamber in parallel with each other; Bonding the insulative substrate and the second insulative substrate with the conductive film forming surface and the groove forming surface facing each other to form a laminate, and forming the laminate in a direction orthogonal to the grooves. A step of obtaining a prism by cutting into a strip shape; a step of obtaining the chip by cutting the prism in a direction perpendicular to a longitudinal direction thereof; and a step of forming a terminal electrode on a surface of the chip where the groove is exposed. Manufacturing method of chip type surge absorber provided.