TW201228060A - Process for preparing an organic electronic device - Google Patents

Process for preparing an organic electronic device Download PDF

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Publication number
TW201228060A
TW201228060A TW100131551A TW100131551A TW201228060A TW 201228060 A TW201228060 A TW 201228060A TW 100131551 A TW100131551 A TW 100131551A TW 100131551 A TW100131551 A TW 100131551A TW 201228060 A TW201228060 A TW 201228060A
Authority
TW
Taiwan
Prior art keywords
layer
insulator layer
dielectric material
radiation
insulator
Prior art date
Application number
TW100131551A
Other languages
English (en)
Chinese (zh)
Inventor
David Christoph Mueller
Toby Cull
Pawel Miskiewicz
Miguel Carrasco-Orozco
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of TW201228060A publication Critical patent/TW201228060A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
TW100131551A 2010-09-02 2011-09-01 Process for preparing an organic electronic device TW201228060A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10009116 2010-09-02

Publications (1)

Publication Number Publication Date
TW201228060A true TW201228060A (en) 2012-07-01

Family

ID=44629966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100131551A TW201228060A (en) 2010-09-02 2011-09-01 Process for preparing an organic electronic device

Country Status (6)

Country Link
US (1) US8883546B2 (enExample)
EP (1) EP2612377B1 (enExample)
JP (1) JP2013541190A (enExample)
KR (1) KR20130112882A (enExample)
TW (1) TW201228060A (enExample)
WO (1) WO2012028244A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110997832A (zh) * 2017-07-31 2020-04-10 康宁股份有限公司 经由添加有机碱的pvdf-hfp的加速热交联以及使用交联的pvdf-hfp作为otft装置的栅极介电材料
CN113410384A (zh) * 2021-06-28 2021-09-17 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103560206B (zh) 2008-11-24 2016-09-28 巴斯夫欧洲公司 可光固化聚合物电介质及其制备方法和用途
EP3154771A1 (en) * 2014-06-16 2017-04-19 SABIC Global Technologies B.V. Crosslinkable polycarbonates for material extrusion additive manufacturing processes
JP6505857B2 (ja) * 2015-09-24 2019-04-24 富士フイルム株式会社 有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法
US10382806B2 (en) * 2016-11-14 2019-08-13 DISH Technologies L.L.C. Apparatus, systems and methods for controlling presentation of content using a multi-media table
GB2563191A (en) * 2017-03-15 2018-12-12 Flexenable Ltd Cross-linked polymers
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
CN110838546A (zh) * 2018-08-17 2020-02-25 康宁股份有限公司 用于有机薄膜晶体管的栅极电介质绝缘体的基于pvdf的聚合物的uv交联
US12360455B2 (en) 2019-02-08 2025-07-15 Brewer Science, Inc. Poly(cyanocinnamate)s for structural and optical applications
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
GB2403023A (en) * 2003-06-20 2004-12-22 Sharp Kk Organic light emitting device
WO2005055248A2 (en) 2003-11-28 2005-06-16 Merck Patent Gmbh Organic semiconducting layer formulations comprising polyacenes and organic binder polymers
KR100592278B1 (ko) * 2004-06-08 2006-06-21 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치
GB0424342D0 (en) * 2004-11-03 2004-12-08 Avecia Ltd Process and device
US20090206328A1 (en) * 2005-01-05 2009-08-20 Kimihiro Matsukawa Silicon-Containing Photosensitive Composition, Method for Forming Thin Film Pattern Using Same, Protective Film for Electronic Device, Gate Insulating Film And Thin Film Transistor
US7385221B1 (en) 2005-03-08 2008-06-10 University Of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
JP4349307B2 (ja) * 2005-03-16 2009-10-21 セイコーエプソン株式会社 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
JP2007150246A (ja) 2005-11-02 2007-06-14 Ricoh Co Ltd 有機トランジスタ及び表示装置
JP2007256782A (ja) * 2006-03-24 2007-10-04 Sekisui Chem Co Ltd シリコン含有感光性組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
WO2008002660A2 (en) * 2006-06-28 2008-01-03 Northwestern University Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
KR101224723B1 (ko) * 2006-09-15 2013-01-21 삼성전자주식회사 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터
JP5562652B2 (ja) 2007-03-07 2014-07-30 ユニバーシティ オブ ケンタッキー リサーチ ファウンデーション シリルエチニル化されたヘテロアセン類およびそれで作製された電子装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110997832A (zh) * 2017-07-31 2020-04-10 康宁股份有限公司 经由添加有机碱的pvdf-hfp的加速热交联以及使用交联的pvdf-hfp作为otft装置的栅极介电材料
CN113410384A (zh) * 2021-06-28 2021-09-17 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法

Also Published As

Publication number Publication date
US20130153885A1 (en) 2013-06-20
WO2012028244A1 (en) 2012-03-08
EP2612377A1 (en) 2013-07-10
EP2612377B1 (en) 2019-10-02
KR20130112882A (ko) 2013-10-14
JP2013541190A (ja) 2013-11-07
US8883546B2 (en) 2014-11-11

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