TW201228060A - Process for preparing an organic electronic device - Google Patents

Process for preparing an organic electronic device Download PDF

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Publication number
TW201228060A
TW201228060A TW100131551A TW100131551A TW201228060A TW 201228060 A TW201228060 A TW 201228060A TW 100131551 A TW100131551 A TW 100131551A TW 100131551 A TW100131551 A TW 100131551A TW 201228060 A TW201228060 A TW 201228060A
Authority
TW
Taiwan
Prior art keywords
layer
insulator layer
dielectric material
radiation
insulator
Prior art date
Application number
TW100131551A
Other languages
English (en)
Chinese (zh)
Inventor
David Christoph Mueller
Toby Cull
Pawel Miskiewicz
Miguel Carrasco-Orozco
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of TW201228060A publication Critical patent/TW201228060A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/191Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
TW100131551A 2010-09-02 2011-09-01 Process for preparing an organic electronic device TW201228060A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10009116 2010-09-02

Publications (1)

Publication Number Publication Date
TW201228060A true TW201228060A (en) 2012-07-01

Family

ID=44629966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100131551A TW201228060A (en) 2010-09-02 2011-09-01 Process for preparing an organic electronic device

Country Status (6)

Country Link
US (1) US8883546B2 (enExample)
EP (1) EP2612377B1 (enExample)
JP (1) JP2013541190A (enExample)
KR (1) KR20130112882A (enExample)
TW (1) TW201228060A (enExample)
WO (1) WO2012028244A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110997832A (zh) * 2017-07-31 2020-04-10 康宁股份有限公司 经由添加有机碱的pvdf-hfp的加速热交联以及使用交联的pvdf-hfp作为otft装置的栅极介电材料
CN113410384A (zh) * 2021-06-28 2021-09-17 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5684715B2 (ja) * 2008-11-24 2015-03-18 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se 光硬化性ポリマー性誘電体、及びその製造方法、及びその使用方法
EP3154771A1 (en) * 2014-06-16 2017-04-19 SABIC Global Technologies B.V. Crosslinkable polycarbonates for material extrusion additive manufacturing processes
WO2017051730A1 (ja) * 2015-09-24 2017-03-30 富士フイルム株式会社 有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法
US10382806B2 (en) * 2016-11-14 2019-08-13 DISH Technologies L.L.C. Apparatus, systems and methods for controlling presentation of content using a multi-media table
GB2563191A (en) * 2017-03-15 2018-12-12 Flexenable Ltd Cross-linked polymers
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
CN110838546A (zh) * 2018-08-17 2020-02-25 康宁股份有限公司 用于有机薄膜晶体管的栅极电介质绝缘体的基于pvdf的聚合物的uv交联
WO2020163765A1 (en) * 2019-02-08 2020-08-13 Brewer Science, Inc. Poly(cyanocinnamate)s for structural and optical applications
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

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JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
GB2403023A (en) 2003-06-20 2004-12-22 Sharp Kk Organic light emitting device
DE602004028399D1 (de) 2003-11-28 2010-09-09 Merck Patent Gmbh Organische halbleiterschicht-formulierungen mit polyacenen und organischen binderpolymeren
KR100592278B1 (ko) * 2004-06-08 2006-06-21 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치
GB0424342D0 (en) 2004-11-03 2004-12-08 Avecia Ltd Process and device
KR20070094617A (ko) * 2005-01-05 2007-09-20 세키스이가가쿠 고교가부시키가이샤 실리콘 함유 감광성 조성물, 이를 이용한 박막 패턴의 제조방법, 전자 기기용 보호막, 게이트 절연막 및 박막트랜지스터
US7385221B1 (en) 2005-03-08 2008-06-10 University Of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
JP4349307B2 (ja) * 2005-03-16 2009-10-21 セイコーエプソン株式会社 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
JP2007150246A (ja) 2005-11-02 2007-06-14 Ricoh Co Ltd 有機トランジスタ及び表示装置
JP2007256782A (ja) * 2006-03-24 2007-10-04 Sekisui Chem Co Ltd シリコン含有感光性組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機el素子、ゲート絶縁膜及び薄膜トランジスタ
US20080161464A1 (en) * 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
KR101224723B1 (ko) * 2006-09-15 2013-01-21 삼성전자주식회사 유기 절연막 조성물, 이를 이용하여 제조된 유기 절연막 및유기 박막 트랜지스터
GB2460579B (en) 2007-03-07 2011-11-02 Univ Kentucky Res Found Silylethynylated heteroacenes and electronic devices made therewith

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110997832A (zh) * 2017-07-31 2020-04-10 康宁股份有限公司 经由添加有机碱的pvdf-hfp的加速热交联以及使用交联的pvdf-hfp作为otft装置的栅极介电材料
CN113410384A (zh) * 2021-06-28 2021-09-17 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法

Also Published As

Publication number Publication date
WO2012028244A1 (en) 2012-03-08
KR20130112882A (ko) 2013-10-14
EP2612377A1 (en) 2013-07-10
US20130153885A1 (en) 2013-06-20
JP2013541190A (ja) 2013-11-07
US8883546B2 (en) 2014-11-11
EP2612377B1 (en) 2019-10-02

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