JP2013541190A - 有機電子デバイスの製造方法 - Google Patents

有機電子デバイスの製造方法 Download PDF

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Publication number
JP2013541190A
JP2013541190A JP2013526338A JP2013526338A JP2013541190A JP 2013541190 A JP2013541190 A JP 2013541190A JP 2013526338 A JP2013526338 A JP 2013526338A JP 2013526338 A JP2013526338 A JP 2013526338A JP 2013541190 A JP2013541190 A JP 2013541190A
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Japan
Prior art keywords
layer
insulator layer
dielectric material
radiation
osc
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Pending
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JP2013526338A
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English (en)
Japanese (ja)
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JP2013541190A5 (enExample
Inventor
ミューラー，デイヴィッド，クリストフ
クル，トビー
ミスキーヴィッツ，パウエル
カラスコ−オロスコ，ミゲル
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Merck Patent GmbH
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Merck Patent GmbH
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Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2013541190A publication Critical patent/JP2013541190A/ja
Publication of JP2013541190A5 publication Critical patent/JP2013541190A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP2013526338A 2010-09-02 2011-08-05 有機電子デバイスの製造方法 Pending JP2013541190A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10009116 2010-09-02
EP10009116.4 2010-09-02
PCT/EP2011/003950 WO2012028244A1 (en) 2010-09-02 2011-08-05 Process for preparing an organic electronic device

Publications (2)

Publication Number Publication Date
JP2013541190A true JP2013541190A (ja) 2013-11-07
JP2013541190A5 JP2013541190A5 (enExample) 2014-09-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013526338A Pending JP2013541190A (ja) 2010-09-02 2011-08-05 有機電子デバイスの製造方法

Country Status (6)

Country Link
US (1) US8883546B2 (enExample)
EP (1) EP2612377B1 (enExample)
JP (1) JP2013541190A (enExample)
KR (1) KR20130112882A (enExample)
TW (1) TW201228060A (enExample)
WO (1) WO2012028244A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023537469A (ja) * 2020-08-06 2023-09-01 メタ プラットフォームズ テクノロジーズ， リミテッド ライアビリティ カンパニー 高キャリア移動度およびその場分離を有する有機半導体層を備えるｏｆｅｔ

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5684715B2 (ja) * 2008-11-24 2015-03-18 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 光硬化性ポリマー性誘電体、及びその製造方法、及びその使用方法
EP3154771A1 (en) * 2014-06-16 2017-04-19 SABIC Global Technologies B.V. Crosslinkable polycarbonates for material extrusion additive manufacturing processes
WO2017051730A1 (ja) * 2015-09-24 2017-03-30 富士フイルム株式会社 有機薄膜トランジスタおよび有機薄膜トランジスタの製造方法
US10382806B2 (en) * 2016-11-14 2019-08-13 DISH Technologies L.L.C. Apparatus, systems and methods for controlling presentation of content using a multi-media table
GB2563191A (en) * 2017-03-15 2018-12-12 Flexenable Ltd Cross-linked polymers
US20210135109A1 (en) * 2017-07-31 2021-05-06 Corning Incorporated Accelerated thermal crosslinking of pvdf-hfp via addition of organic bases, and the usage of crosslinked pvdf-hfp as gate dielectric material for otft devices
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
CN110838546A (zh) * 2018-08-17 2020-02-25 康宁股份有限公司 用于有机薄膜晶体管的栅极电介质绝缘体的基于pvdf的聚合物的uv交联
WO2020163765A1 (en) * 2019-02-08 2020-08-13 Brewer Science, Inc. Poly(cyanocinnamate)s for structural and optical applications
CN113410384B (zh) * 2021-06-28 2023-04-07 西南大学 一种用于柔性场效应晶体管的聚合物介电层的制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040222412A1 (en) * 2003-05-08 2004-11-11 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2005354034A (ja) * 2004-06-08 2005-12-22 Samsung Sdi Co Ltd 薄膜トランジスタ、及びこれを備えた表示装置
WO2006048092A1 (en) * 2004-11-03 2006-05-11 Merck Patent Gmbh Process for making an organic field effect transistor
JP2006261339A (ja) * 2005-03-16 2006-09-28 Seiko Epson Corp 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
JP2007256782A (ja) * 2006-03-24 2007-10-04 Sekisui Chem Co Ltd シリコン含有感光性組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
JP2007528811A (ja) * 2003-05-08 2007-10-18 スリーエム イノベイティブ プロパティズ カンパニー 有機ポリマー、ラミネート、およびコンデンサー
US20080067505A1 (en) * 2006-09-15 2008-03-20 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film, organic insulating film prepared by using the same and organic thin film transistor comprising the organic insulating film
US20080161464A1 (en) * 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
GB2403023A (en) 2003-06-20 2004-12-22 Sharp Kk Organic light emitting device
DE602004028399D1 (de) 2003-11-28 2010-09-09 Merck Patent Gmbh Organische halbleiterschicht-formulierungen mit polyacenen und organischen binderpolymeren
KR20070094617A (ko) * 2005-01-05 2007-09-20 세키스이가가쿠 고교가부시키가이샤 실리콘 함유 감광성 조성물, 이를 이용한 박막 패턴의 제조방법, 전자 기기용 보호막, 게이트 절연막 및 박막트랜지스터
US7385221B1 (en) 2005-03-08 2008-06-10 University Of Kentucky Research Foundation Silylethynylated heteroacenes and electronic devices made therewith
JP2007150246A (ja) 2005-11-02 2007-06-14 Ricoh Co Ltd 有機トランジスタ及び表示装置
GB2460579B (en) 2007-03-07 2011-11-02 Univ Kentucky Res Found Silylethynylated heteroacenes and electronic devices made therewith

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040222412A1 (en) * 2003-05-08 2004-11-11 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2007528811A (ja) * 2003-05-08 2007-10-18 スリーエム イノベイティブ プロパティズ カンパニー 有機ポリマー、ラミネート、およびコンデンサー
JP2005354034A (ja) * 2004-06-08 2005-12-22 Samsung Sdi Co Ltd 薄膜トランジスタ、及びこれを備えた表示装置
WO2006048092A1 (en) * 2004-11-03 2006-05-11 Merck Patent Gmbh Process for making an organic field effect transistor
JP2008519445A (ja) * 2004-11-03 2008-06-05 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング 有機電界効果トランジスタの製造方法
JP2006261339A (ja) * 2005-03-16 2006-09-28 Seiko Epson Corp 有機半導体装置の製造方法、有機半導体装置、電子デバイスおよび電子機器
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
JP2006295165A (ja) * 2005-04-13 2006-10-26 Xerox Corp 薄膜トランジスタ及び薄膜トランジスタの作製方法
JP2007256782A (ja) * 2006-03-24 2007-10-04 Sekisui Chem Co Ltd シリコン含有感光性組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
US20080161464A1 (en) * 2006-06-28 2008-07-03 Marks Tobin J Crosslinked polymeric dielectric materials and methods of manufacturing and use thereof
US20080067505A1 (en) * 2006-09-15 2008-03-20 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film, organic insulating film prepared by using the same and organic thin film transistor comprising the organic insulating film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023537469A (ja) * 2020-08-06 2023-09-01 メタ プラットフォームズ テクノロジーズ， リミテッド ライアビリティ カンパニー 高キャリア移動度およびその場分離を有する有機半導体層を備えるｏｆｅｔ

Also Published As

Publication number Publication date
WO2012028244A1 (en) 2012-03-08
KR20130112882A (ko) 2013-10-14
EP2612377A1 (en) 2013-07-10
TW201228060A (en) 2012-07-01
US20130153885A1 (en) 2013-06-20
US8883546B2 (en) 2014-11-11
EP2612377B1 (en) 2019-10-02

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