TW201220628A - Group III nitride-based green-laser diodes and waveguide structures thereof - Google Patents
Group III nitride-based green-laser diodes and waveguide structures thereof Download PDFInfo
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- TW201220628A TW201220628A TW100133249A TW100133249A TW201220628A TW 201220628 A TW201220628 A TW 201220628A TW 100133249 A TW100133249 A TW 100133249A TW 100133249 A TW100133249 A TW 100133249A TW 201220628 A TW201220628 A TW 201220628A
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- waveguide layer
- thickness
- side waveguide
- laser diode
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Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 50
- 238000005253 cladding Methods 0.000 claims abstract description 107
- 229910052738 indium Inorganic materials 0.000 claims abstract description 77
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 69
- 230000003287 optical effect Effects 0.000 claims abstract description 39
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 427
- 229910002601 GaN Inorganic materials 0.000 claims description 53
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 17
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 210000000078 claw Anatomy 0.000 claims 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
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- 125000006850 spacer group Chemical group 0.000 description 6
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- 229910000831 Steel Inorganic materials 0.000 description 3
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- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
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- 240000002329 Inga feuillei Species 0.000 description 1
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- 244000294611 Punica granatum Species 0.000 description 1
- 235000014360 Punica granatum Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- -1 for example Chemical group 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000241 respiratory effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/885,951 US8897329B2 (en) | 2010-09-20 | 2010-09-20 | Group III nitride-based green-laser diodes and waveguide structures thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201220628A true TW201220628A (en) | 2012-05-16 |
Family
ID=44674908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100133249A TW201220628A (en) | 2010-09-20 | 2011-09-15 | Group III nitride-based green-laser diodes and waveguide structures thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8897329B2 (OSRAM) |
| JP (1) | JP2013541209A (OSRAM) |
| KR (1) | KR20130099099A (OSRAM) |
| CN (1) | CN103119809B (OSRAM) |
| TW (1) | TW201220628A (OSRAM) |
| WO (1) | WO2012039997A2 (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8379684B1 (en) * | 2011-08-16 | 2013-02-19 | Corning Incorporated | Hole blocking layers in non-polar and semi-polar green light emitting devices |
| US20130322481A1 (en) * | 2012-05-31 | 2013-12-05 | Rajaram Bhat | Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facets |
| CN102723995B (zh) * | 2012-07-11 | 2015-12-09 | 东莞铭普光磁股份有限公司 | 一种有源光模块控制器 |
| JP5781032B2 (ja) * | 2012-07-30 | 2015-09-16 | 株式会社東芝 | 半導体発光素子 |
| US20140077153A1 (en) * | 2012-09-14 | 2014-03-20 | Tsmc Solid State Lighting Ltd. | Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate |
| DE102012220911A1 (de) * | 2012-09-27 | 2014-05-15 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit verbesserter Stromführung |
| US10153394B2 (en) | 2012-11-19 | 2018-12-11 | Genesis Photonics Inc. | Semiconductor structure |
| TWI535055B (zh) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
| TWI524551B (zh) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
| JP6255939B2 (ja) * | 2012-11-27 | 2018-01-10 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| DE102014111058A1 (de) * | 2014-08-04 | 2016-02-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung |
| TWI738640B (zh) * | 2016-03-08 | 2021-09-11 | 新世紀光電股份有限公司 | 半導體結構 |
| TWI717386B (zh) | 2016-09-19 | 2021-02-01 | 新世紀光電股份有限公司 | 含氮半導體元件 |
| CN107093628B (zh) * | 2017-04-07 | 2019-12-06 | 电子科技大学 | 一种极化掺杂增强型hemt器件 |
| EP3646420B1 (en) * | 2017-06-30 | 2022-06-01 | Oulun yliopisto | Method of manufacturing optical semiconductor apparatus and the apparatus |
| WO2019232261A1 (en) * | 2018-05-30 | 2019-12-05 | Nlight, Inc. | Large optical cavity (loc) laser diode having quantum well offset and efficient single mode laser emission along fast axis |
| CN111697428B (zh) * | 2020-06-16 | 2021-08-10 | 东莞理工学院 | 一种氮化镓基激光二极管外延结构及其制备方法 |
| CN117063359A (zh) * | 2021-03-24 | 2023-11-14 | 新唐科技日本株式会社 | 氮化物系半导体发光元件 |
| CN116742476A (zh) * | 2021-10-12 | 2023-09-12 | 厦门三安光电有限公司 | 激光二极管 |
| WO2024091031A1 (ko) * | 2022-10-27 | 2024-05-02 | 주식회사 소프트에피 | 3족 질화물 반도체 발광소자 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5048038A (en) * | 1990-01-25 | 1991-09-10 | The United States Of America As Represented By The United States Department Of Energy | Ion-implanted planar-buried-heterostructure diode laser |
| US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JP3372226B2 (ja) * | 1999-02-10 | 2003-01-27 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| DE60230602D1 (de) | 2001-03-28 | 2009-02-12 | Nichia Corp | Nitrid-halbleiterelement |
| US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
| US6724013B2 (en) | 2001-12-21 | 2004-04-20 | Xerox Corporation | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection |
| US7279751B2 (en) | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
| US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
| KR100701006B1 (ko) * | 2005-05-31 | 2007-03-29 | 한국전자통신연구원 | 포물선 도파로형 평행광 렌즈 및 이를 포함한 파장 가변외부 공진 레이저 다이오드 |
| US20070002914A1 (en) * | 2005-06-27 | 2007-01-04 | Samsung Electronics Co., Ltd. | Semiconductor laser diode having an asymmetric optical waveguide layer |
| KR100837404B1 (ko) | 2006-10-18 | 2008-06-12 | 삼성전자주식회사 | 반도체 광전 소자 |
| JP2008177213A (ja) | 2007-01-16 | 2008-07-31 | Toshiba Corp | 半導体レーザ装置 |
| JP2009059797A (ja) * | 2007-08-30 | 2009-03-19 | Sharp Corp | 窒化物半導体レーザ素子 |
| JP2009164233A (ja) * | 2007-12-28 | 2009-07-23 | Rohm Co Ltd | 窒化物半導体レーザ素子およびその製造方法 |
| JP4720834B2 (ja) * | 2008-02-25 | 2011-07-13 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ |
| JP2009246005A (ja) | 2008-03-28 | 2009-10-22 | Furukawa Electric Co Ltd:The | 半導体発光素子 |
| JP2010109332A (ja) * | 2008-09-30 | 2010-05-13 | Sanyo Electric Co Ltd | 半導体レーザ装置および表示装置 |
| US8084763B2 (en) * | 2008-10-31 | 2011-12-27 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
| JP4912386B2 (ja) * | 2008-11-26 | 2012-04-11 | シャープ株式会社 | ＩｎＧａＮ層の製造方法 |
| JP5316276B2 (ja) * | 2009-01-23 | 2013-10-16 | 住友電気工業株式会社 | 窒化物半導体発光素子、エピタキシャル基板、及び窒化物半導体発光素子を作製する方法 |
-
2010
- 2010-09-20 US US12/885,951 patent/US8897329B2/en not_active Expired - Fee Related
-
2011
- 2011-09-13 WO PCT/US2011/051343 patent/WO2012039997A2/en not_active Ceased
- 2011-09-13 JP JP2013530187A patent/JP2013541209A/ja active Pending
- 2011-09-13 CN CN201180045031.3A patent/CN103119809B/zh not_active Expired - Fee Related
- 2011-09-13 KR KR1020137009407A patent/KR20130099099A/ko not_active Withdrawn
- 2011-09-15 TW TW100133249A patent/TW201220628A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US8897329B2 (en) | 2014-11-25 |
| JP2013541209A (ja) | 2013-11-07 |
| WO2012039997A3 (en) | 2012-10-04 |
| CN103119809A (zh) | 2013-05-22 |
| US20120069863A1 (en) | 2012-03-22 |
| CN103119809B (zh) | 2015-09-16 |
| KR20130099099A (ko) | 2013-09-05 |
| WO2012039997A2 (en) | 2012-03-29 |
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