TW201219505A - Precious-metal paste for bonding semiconductor device - Google Patents

Precious-metal paste for bonding semiconductor device Download PDF

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Publication number
TW201219505A
TW201219505A TW100136012A TW100136012A TW201219505A TW 201219505 A TW201219505 A TW 201219505A TW 100136012 A TW100136012 A TW 100136012A TW 100136012 A TW100136012 A TW 100136012A TW 201219505 A TW201219505 A TW 201219505A
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TW
Taiwan
Prior art keywords
paste
precious
powder
bonding
metal paste
Prior art date
Application number
TW100136012A
Other languages
English (en)
Other versions
TWI484000B (zh
Inventor
Masayuki Miyairi
Nobuyuki Akiyama
Katsuji Inagaki
Toshinori Ogashiwa
Original Assignee
Tanaka Precious Metal Ind
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Application filed by Tanaka Precious Metal Ind filed Critical Tanaka Precious Metal Ind
Publication of TW201219505A publication Critical patent/TW201219505A/zh
Application granted granted Critical
Publication of TWI484000B publication Critical patent/TWI484000B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3013—Au as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
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201219505 六、發明說明： 【發明所屬之技術領域】 本發明係關於適合於基板與半導體元件之接合的主 屬糊狀物。 · 【先前技術】 在半導體元件之對於基板的黏晶等，各構件之接人 時，焊接材被廣泛使用，無助焊劑之焊接材之金锡系焊: 材被-般得廣泛使用。使用焊接材來接合各種構件之情 況，已知將透過焊接材接合之-對的構件配置彳4，加^ 焊接材溶融之溶點以上（約300 t)而使焊接材溶融之方 法。然而，若加熱成如此高溫，接合後會由於施加於構件 之熱應力，在半導體元件等構件中，有產生電氣特性變動 的問題之情況。 由此理由來看，藉由儘可能低溫的加熱而可使構件接 合之材料被期望取代焊接材，做為該材料’在例如專利文 獻1中’記載了含有銀粉與環氧樹脂’可在1〇〇~2〇(rc之 相較低溫接合之銀糊狀物。又本發明者等，在專利文獻2
十’提供具有既定的純麼；5物依+人A <刃..¾度及粒徑之含有金粉與有機溶劑的 金糊狀物。 先行專利文獻： 【專利文獻】 【專利文獻1】日本專利特開2〇〇4_35983〇號公報 201219505 【專利文獻2】日本專利特開2007 — 324523號公報 【發明内容】 【發明所欲解決之課題】 然而，如上述專利文獻i般含有樹脂之糊狀物，在接 合時的加熱樹脂無法完全分解，有殘留於接合後的構件之 情況。因此，在半導體晶片等之構件中，殘存的樹脂成為 汗染原因，而有影響半導體性能等之情況。此點，專利文 獻2之糊狀物，雖可以做成不含有樹脂之構成，但在此情 況’糊狀物塗佈時貴金屬粒子之㈣有較容易進行的^ 況，或有機③劑有從所塗佈的糊狀物滲出的情況，難以^ 一塗佈。X，在如專利文獻2之含有有機溶劑的糊狀物， 加熱塗佈後的糊狀物而使金燒結時，“於有機溶劑的揮 fx #而在燒結體中產生空洞的情況。 因此在本發明中，係以提供在接合部不會產生 染之貴金屬糊狀物’可對接合構件均—塗佈，且由於接人 時之加熱，貴金屬燒結後的燒結體之狀態也為良好d 屬糊狀物為目的。 貝生 【用以解決課題之手段】 ’對於不使用可能成為 而可對接合構件均一塗 到如以下之本發明之賁 本發明者們，為解決上述課題 接合後的汙染原因之各種樹脂等， 佈之貴金屬進行檢討。其結果，想 金屬糊狀物。
S 201219505 亦即，本發明係關於由貴金屬粉與有機溶劑構成，主 金屬粉為純度99.9質量％以上，平均粒徑〇丨〜〇 ; 機溶劑為海點200〜35(rc，貴金屬糊狀物從藉由回^黏戶 劑測定之在23°C中對於剪切速率4〇/s之#占度之 黏度的測定值來算出之觸變指數⑴）值在6 〇以上之半導 體元件接合用的貴金屬糊狀物。本發明之貴金屬糊狀物， 不含有可能成為接合構件之汗染原因的各種樹脂，對於接 合構件，可漂濕性良好且均一得塗佈。又，藉由本發明之 責金屬糊狀物，可維持塗佈後之貴金屬粒子之分散性均 一’因此接合時之加熱時，可均—放出由於有機系成分的 揮發刀解而形成之脫氣，而可抑制空洞的發生。 在此，說明關於在本發明之糊狀物中所規定之「τι(觸 變指數）值」。在貴金屬等之糊狀物中…般而言，隨著在 測定時對於糊狀物施加之剪斷速度愈大，黏度有低下之傾 向。在如此背景下’ TI值係藉由剪斷速度不同之2種的回 轉速度而敎之黏度的值，做為兩者之黏度的比而算出， 因此’ TI值係表示對於剪斷速度之黏度變化之值，亦即， 表現觸變性高低的指標。 本本發月之貝金屬糊狀物之TI值在6.0以上，觸變性適 當，高。因此’在塗佈糊狀物時不僅可維持成形性，也可 使猎由接合時的加敎夕音么jg 加熱之貝金屬的燒結均一進行，而可使燒 成後之燒結體為緻密的狀態。由於此優點來看，本發明之 責金屬糊狀物，特別適合於進行大面積塗佈之黏晶接合。 右' T I值未滿6 D，目丨丨4堯主· A a • 則在將貝金屬糊狀物塗佈於接合構件時 201219505 溶劑有滲出（Bleed out)的情況。又，做為n值的上限值， 以20以下為佳。若超過2〇，則在貴金屬糊狀物塗佈前之 混練時有難以操作的傾向。 又，關於在算出TI值之前提的剪切速率4/s之黏度， 以100〜l〇〇〇pa. s為佳。若 々征右未滿1 oopa . s ,則貴金屬粉沉 降而有今易與洛劑分離的傾向，若超^ s 作性容易低下。以下 并 ' -卜以下，對於本發明之貴金屬糊狀物詳細說 明。 目尤，說明 傅攻丰發 3之貝金屬糊狀物之有機溶劑說 發明中之有機溶劑，為彿點200〜350°C (大氣塵下） 有機t劑之沸點，若未滿在接合時加熱時， 有機；谷劑的条發逮度快， 主 …、 、 僅貝金屬粒子之凝集控制變得 困難，且在有的情況， 彳欠付 P使在*溫有機溶劑也會基發，因 此糊狀物塗佈時之操作 因 〇* 佧困難。另一方面，有機溶劑的 情況m 、有機备劑有殘留在接合後的構件之 種以上… ☆在該彿點的範圍内，可含有 在含有2種以卜 發月，「沸點200〜350t」，係指 有2種以上的有機溶劑 有機溶劑’滞點分別在2〇 “有之全。刚的 做為可在本發明利用之有=_的意思。 肪族2價醇類、n 機，合劑，以分枝鏈狀飽和脂 族2價醇類，俜使用$ 為佳，做為分枝鏈狀飽和脂肪 1，戊二醇、} n ，2~ 丁二醇、1，3 丁二醇、 201219505 己二醇 醇、1，6—己二醇 —己二醇、1， 或其衍生物，做為單萜婦醇， ， — ^ ^ 了使用香茅醇、香葉醇、橙 化酵、薄何醇、萜品醇、音智 ^ 只151 .、側柏醇 '松莰醇、/5 — 蔚醇、二甲基辛醇、麵其夫# # 尨基香矛醇或是這些得衍生物。 右考慮溶劑的彿點，上述右她 攻有機浴劑之碳數以5〜20為 佳。特別是，僅從1錄古地 、 有機洛劑形成之情況，以使用碳數 為5〜20之飽和脂肪族2價醇為佳，2, 4—二乙基_1，5 — 戍^一醇（製品名日香MARq· 晋财RS，日本香料藥品（股份公司）， 以下記載為MARS。）特別適合。由 由2種有機溶劑形成的情 況’以混合碳數為5〜2 0之呈援—β 早衣式早萜烯醇與2環式單萜烯 醇使用為佳，將環己异龍腦_ (製品$ TersWPH;日 本Terpene化學（股份公引、 __ 伪Α Ί)，以下，記載為MTPH。）與a — 薛品醇以質量比1/1〜W之比率混合之物特別適合。 接著，說明構成本發明之糊狀物之貴金屬粉。做為貴 金屬粉’可使用金粉或銀粉，或是其混合粉。若考慮電氣、 熱傳導性，特別適合僅使用金粉。 做為貴金屬粉之純度要求99·9質量%以上之高純度， 係由於若純度低’則金粒子之燒結舉動變得不安定，而接 合強度的安定性低下’或是接合後之接合構件變硬而容易 由於熱衝擊等造成產生裂痕之故…貴金屬粉的平均粒 牷為〇,卜0.5”。在超過。·5//ιη之粒徑的貴金屬粉，在 糊狀物中之分散狀態的維持變得困難，貴金屬粉容易沉 降又，藉由接合時之加熱而燒結責金屬粉後，也難以使 貴金屬粉之間出現較佳的接近狀態。另一方面，平均粒徑 201219505 若未滿〇. 1 /z m，則貴金屬粉有發生凝集的情況。 在糊狀物中貴金屬粉之含有量，以 a股槓含有率（責金屬 粉之體積/貴金屬糊狀物全體之體積） 價）在26〜66體積％(v/ 〇之範圍内為佳。若為如此之體積含有率，則容易成為η 值為6.0以上之貴金屬糊狀物…接合後的燒結體也容 易成為緻密的狀態，而可實現密著性高的接合4屬粉的 含有率，若未滿26體積％’則難以得到密著性提高的效 糊狀物也變得難以混練。另一方面， 右超過66體積％，則 責金屬粉有發生凝集的情況。貴金屬的含有量，若為 體積％(ν/ ν)則更佳。 在以上所說明之由責金屬粉與有機溶劑構成之貴金屬 糊狀物中，更可含有0.054質量％之界面活性劑。若含有 界面活性劑，則在貴金屬糊狀物中，貴金屬粉容易維=均 一擴散之狀態。界面活性劑若未滿〇_ 〇5質量％則貴金屬粉 之凝集抑制效果低，若超過丨質量％則界面活性劑有殘留在 接合後之構件的情況。做為界面活性劑，以陽離子性界面 活性劑為佳’例如可使用十二烷基三甲基銨鹽、十六烷基 三甲基銨鹽、十八烷基三甲基銨鹽、十二烷基二曱基銨鹽、 十八烷基二甲乙基銨鹽、十二烷基二曱基苄基銨鹽、十六 燒基二曱基苄基銨鹽、十八烷基二甲基苄基銨鹽、三曱基 节基敍鹽、三乙基苄基銨鹽等之第4級銨鹽；十八院基胺 鹽、十八酰胺鹽、Ν—烷基烯烴二胺鹽等之烷基胺鹽系；十 六院基°比咬鏽鹽、十二烷基吡啶鑌鹽等之吡啶鑌鹽系。其 中’又以烧基（C8 —C18)胺醋酸鹽（製品名：ARMACC) 、Ν — 9 201219505 品名：DUOMEEN TD0) '由於分解時需要高 烷基（C14 一 C18)三甲撐二胺烯酸鹽（製 特別適合。又’高分子系界面活性劑 溫，因此不適合於本發明。 【發明效果】 不會產生接 塗佈，且由 如以上所說明，本發明之貴金屬糊狀物， 合後之構件汙染等，而可對各種接合構件均一 於接合時之加熱之燒結也可均一得進行。 【實施方式】 以下，對於本發明之較佳的實施形態說明 [實施例1 ] 一 w貝篁％的金粉（ 均粒徑：0.3^)95質量％，與做為有機溶劑之環已弃龍 醋（MTPH)3.75質量％ ’與α —箱品醇125質量％混合而 整金糊狀物。在此金糊狀物中金粉的體積含有率為=6 積％。對於較Μ线㈣及所得収金糊狀物，進行 下物性測定。 物性測定 有機溶劑及金糊狀物之黏度，係以圓錐型回轉黏度售 (ΗΜΚΕ公司製’ Rheostress m5，圓錐板：欽製^ 叫。、以間隙0.050 mm來測定）’測定溫度抓，以剪士 速率〇/S保持少後，分別以剪切速率4/s、2〇“ 40/s的順序保持30秒而連續測定。有機溶劑的彿點，令 201219505 藉由TG-DTA(熱重量/示差熱同時分析：以抑“製 TG8101D)，在大氣下以l(TC//min之升溫速率來測定。又 觸變指數（τι)值，係從前述剪切速率4/3及4〇/s之黏度 測定值以下述式來算出。又’對於實施例i之金糊狀物， 進行了 TG-DTA(熱重量/示差熱同時分析）。 TI=(剪切速率4/s的黏度）+ (剪切速率4Q/s的黏 度） 由以上結果，實施例1之金糊狀物之剪切速率4/s的 黏度為256Pa. S。又，根據TG_DTA，可確認到在實施例丄 之金糊狀物，纟7(TC有機溶劑開始蒸發，在19吖有機成 分完全消失。 [實施例.2〜5、比較例1〜7 ] 使用同於實施例1之今扒，丨、,主]& _丄 金私以表1所不有機溶劑及金 含有量來做成金糊狀物。在眚姑你丨9m τ 牡貝％例2中，使用平均粒徑為 〇 · 1 V m之金粉。在比齡你丨7 乂* m μ & #上 你％平又例7使用雙烯基琥珀醯亞胺（King
Industries 公司製，商。夕.νν-, 〇〇〇〇ν ^ 两时名.κχ1 223〇 。對於各實施例 及比較例，以同於實施例！夕古、土丨> ί之方法測疋有機溶劑的黏度及 沸點，與金糊狀物之黏度及η I。結果示於表卜 【表1】 有機溶劑*2 糊狀物 有機溶劑的 種類吣 金含有率 (體積%) 黏度 沸點 (pa.s) (。〇 黏度(Pa · s) 剪切速率 剪切速率 TI值
201219505 實施例5 MARS 41.4 1.7 264 502 82 6 ] 比較例1 M/T=3/l 36.4 14.4 313/213 157 29 V· 1 5.4 比較例2 MARS/T=3/1 29.7 14.4 264/213 52 13 4 比較例3 M/T=l/1 29.5 1.3 313/213 77 21 Q 7 比較例4 Μ 44.8 1702 313 無 法糊狀物4 Ο. 1 比較例5 Μ 35.8 1702 313 144 54 2 7 比較例6 Τ 35.8 0.05 213 無法糊贴 比較例7 KX1223C 43.5 6.5 350-450 328 152 2 2 ※l Μ表示ΜΤΡΗ ' Τ表示α —萜品醇 M/Τ為對於α —萜品醇之MTPH之混合比》 ※2關於Μ/T，係表示（ΜΤΡΗ的沸點）/(α—萜品醇的沸點）。 由以上之物性測定結果來看，顯示實施例1〜5之貴金 屬糊狀物，ΤΙ值為6. 0以上。相對於此，在比較例卜3、5、 7，ΤI值為未滿6 · 0。又，在比較例4、6 ,即使將金粉與 有機溶劑混合，貴金屬粉會馬上沉降而與溶劑分離，或是 成為難以操作之物，皆無法糊狀化。 [金粉之平均粒徑] 以上之實施例及比較例之外，使用平均粒徑〇. 7 # m及 〇. 0 5 // m之物做為金粉，同於實施例i做成金糊狀物。其 、’。果在金粉之平均粒徑為〇 · 7 // m之情況，糊狀物中之金 粉的分散無法維持而發生沉降，〇_ 〇5 # m之情況，糊狀物 中確認到部分的凝集。 [銀糊狀物] 又，使用銀粉（86重量％ ; 37體積％)取代金粉，同於實 施例1做成銀糊狀物，進行物性測定。其結果，所得到之 銀糊狀物’剪切速率4//s的黏度為176pa . s，剪切速率 4〇/s的黏度為i9Pa . s，TI值為9. 3。 對於基板之塗佈試驗 12 201219505 接著，將上述實施例1〜5及比較例卜3、5之金糊狀物， 在lOOmrn2之半導體基板（矽）中央，使面積成為來塗 佈’評價對於基板之塗佈性能。又，基板係使用預先在表 面上濺鍍鈦（5〇nm)、金（200nm)而製膜之物。 上述的結果’實施例1〜5的金糊狀物，具有適當的漂 濕性而容易塗佈於基板，塗佈後之金糊狀物也維持充分的 成形性。另一方面，比較例3之金糊狀物，有溶劑從塗佈 後之金糊狀物滲出之傾向，塗佈後之糊狀物為會產生變形 之物。 接合試驗 如上述塗佈糊狀物後，不進行乾燥及燒結，進行以下 的接2合試驗。接合試驗係在塗佈後之糊狀物上，載置面積 4 mm之矽晶片（預先以鈦（5〇nffl)、金（2〇〇製膜），加 熱及加壓來進行。接合時的加壓，為平均每1晶片為 20N(5MPa)，加熱係藉由從卫具的傳熱而成& 23代，加 熱及加壓時間為1 〇分鐘。 藉由上述而接合之接合部’透過外觀X光透視々 (Unihlte —SyStem公司製）來進行組織觀察，基於下述式, 出接合率。接合率的結果示於表2。又，實施例i及比與 例1之X光透視像，以及實施例i之剖面⑽觀察結果仓 示於第1圖。在X光透視像中，在接合部，空洞發生而彦 生空隙的部分觀測為白色，接合部密著的部分觀測為灰色 (黑色）。 接合率= U者的部分（X光透過畫像中灰色部分）之面 201219505 積} + {接合部全體（X光透過畫像中灰色部分與白色部分的 合計）的面積} 【表2】 Γ"—— 接合車 實驗例1 9 8% 實驗例2 ___9 5% 實驗例3 97% 實驗例4 91% 實驗例5 94% 比較例1 7 7% 比較例2 _6J% 比較例3 _ 6 5% 比較例5 ._ 66% 由第1圖的結果來看，藉由實施例丨之金糊狀物之接 ”P，在外觀X光透視像中’幾乎不會觀察到由於空洞發 生而造成之空隙之白色部分，在剖面SEM像中，金屬粉末 也以接近於點接觸之壯能抑& ^ 觸之狀態鄰接，在表2之接合率也在 9 0 %以上。藉由以上， A 了確遴到由於接合時之加熱而金粉的 燒結均一得進行。 使用實施例2〜5之糊狀物的情 接合率為m以上，同”二清兄從表2也可確認到 生，可確認燒結均一的進行。又4手觀察不到空洞的發 況，從外觀X光透視儍 > 使用銀糊狀物接合的情 可硇，也幾乎觀察不到空洞的發生，也 可確涊到銀粉的燒結均—得進行。 I玍也 Μ另—方面’使用比較例1之金糊狀物之情況，從表2 可確認到接合率<$ W It况從表2 在第1圖之外觀χ光透視像，
14 201219505 觀察到多數由於空洞發生而造成之空隙的白色部分。因 此，在比較例1中，在接合時的加熱時，由於有機成分由 來之脫氣（放出），而發生多數的空洞，被認為金粉之燒結 沒有均一得進行。 在使用比較例2、3、5之糊狀物之情況，也可從表2 確認到接合率未滿90%，觀察到多數由於空洞發生而造成 之空隙的白色部分。又，在使用比較例7之金糊狀物接合 之情況’藉由外觀X光透視像’觀察到多數由於空洞發生 而造成之空隙的白色部分。 接合強度試驗 接著’關於在以上進行之接合，遵照第2圖進行接合 強度試驗。接合強度，係對於在半導體基板10上透過燒結 體2 0而接合之半導體晶片（耐熱性石夕晶片）g 〇，從橫方向以 一疋速度使刀片與晶片接觸’使其行進’測定發生破斷（晶 片的剝離）時之應力的平均值（單位：N)。從此測定值與破 斷後之接合部面積來真出平均每單位面積之接合強度的平 均值（單位：MPa)。結果示於表3。 【表3】 平均1接合部之破斷應力 (平均值） 接合強度 (平均值） 實施例1 160N 40Mpa 實施例2 140N 35Mpa 實施例3 160N 40MPa 實施例4 150N 38MPa 實施例5 150N 38MPa 比較例1 130N 32MPa
S 15 201219505 從表3,可確認到使用實施例丨〜5之糊狀物接合之情 況，接合部為對於電子零件之接合等為充分之接合強度 (20MPa)。又，在使用比較例丨之糊狀物之接合，雖然關 於接合強度與實施例為相同程度，但由於如以上說明，接 合率低（表2)，觀察到多數的空洞發生（第i圖），因此 並非適合於電子零件之接合。 【產業上之可利用性】 本發明之貴金屬糊狀物，適合於各種接合構件之低溫 接合，在將被擔心有熱應力的影響之半導體元件等接合於 基板時為有用。 【圖式簡單說明】 第1圖係藉由接合部外觀X光透視像及電子顯微鏡 (SEM)之剖面觀察結果。 第2圖係表示接合強度之試驗方法之圖。 【主要元件符號說明】 10 半導體基板 2〇 燒結體 30 半導體晶片 16

Claims (1)

  1. 201219505 七、申請專利範圍： 種半導體元件接合用的貴金屬糊狀物 金屬粉與有機溶劑槿 ’、 貝 产qq q暂”構成之貝金屬糊狀物中，貴金屬粉為純 度99·9質量％以卜，了 ， 2〇〇 平均粒徑0.1〜〇.5#m，有機溶劑為沸 點2 0 0〜3 5 0 c，JL牲料+ +入. 声#丨丨— ；，貝金屬糊狀物從藉由回轉黏 度劑測疋之在23°C中斛认命 之黏卢&、目I ^ ，；剪切速率40/S之黏度之4//s 之黏度的測疋值來算出 出之觸變指數（TI)值在6. 〇以上。 2 ·如申請專利範圚 .s bv ^ 圍第1項之貴金屬糊狀物，其中，貴 金屬粉為金粉或銀粉 貝 <仕一種以上形成。 3.如申請專利範圚筮1 i ^ . M ^ J 乐1或2項之貴金屬糊狀物，其中’ 貝金屬糊狀物中貴金屬 T / 、 之體積含有率為26〜66體積％(ν / V J 0 4_如申5眚專利範圍第1 。 物，盆由 ^ 丨至3項中任一項之貴金屬糊狀 物’其中，係用於半暮辦一 R ^ 等體70件黏晶接合用。 5·如申請專利範圍第 物，其中，在接合半導體-任一項之貴金屬糊狀 葙僮由执丄 几件之情況的接合部，在X光透 藉由對於接合部 分的而接ΛΑ· 王體的面積之接合部中密著的部 刀的面積的比率算出之 饮0率為90%以上。 S 17
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