201213598 六、發明說明： 【發明所屬之技術領域】 發明領域 本發明是有關於一種用以防止氣體混合之大面積沈積 裝置’其係在氣體流入處理室之内部前防止氣體相互混 合’且可讓氣體相互地均一混合並均一地喷射至處理室之 内部。 【先前技術1 發明背景 以化學氣相沈積法（Chemical Vapor Deposition : CVD) 進行之薄膜沈積技術’在半導體元件之絕緣層及主動層、 液晶顯示元件之透明電極、發光顯示元件之發光層及保護 層等的各種應用領域中係非常重要。 一般上’以CVD沈積之薄膜的物性在沈積壓力、沈積 溫度、沈積時間等的製程條件都會接受到非常敏感之影 響。譬如，由於沈積壓力變化，所沈積之薄膜的組成、密 度、接著力及沈積速度等都會產生變化。 化學氣相沈積法分為LPCVD(Low Pressure Chemical Vapor Deposition :低壓化學氣相沈積法）、 APCVD(Atmospheric Pressure Chemical Vapor Deposition '· 常壓化學氣相沈積法）、LTCVD(Low Temperature Chemical Vapor Deposition :低溫化學氣相沈積法）、PECVD(Plasma Enhanced Chemical Vapor Deposition :電漿輔助化學氣相沈 積法）、MOCVD(Metal Organic Chemical Vapor Deposition : 201213598 有機金屬化學氣相沈積法）等。 其中，MOCVD係如下述之技術，即，使用金屬有機化 合物（metal organic compound)作為前躯體(precursor) ’ 且對 於處理室内經加熱之基板的表面送出高蒸氣壓之金屬有機 化合物的蒸氣，藉此長成所希望的薄膜。 MOCVD係階梯覆蓋性(step coverage)優異，且基板及 結晶的表面無損傷，因此可長成高純度及高品質之薄膜。 再者’沈積速度較快，可縮短製程時間，因此生產性亦優。 歷來之MOCVD裝置為讓氣體均一地喷射，係需要形成 有多數個微細孔之喷頭，因此有成本上揚之問題。 特別是歷來之MOCVD裝置，為防止於薄膜沈積時所使 用的兩種以上之氣體在喷射前混合且在不希望處進行沈 積，不得不將喷頭加工為更複雜之形狀。因此，有M〇CVD 裝置之成本更加提高之問題。 又，歷來之MOCVD裝置於喷頭之氣體喷射孔堵塞而不 得不修理或洗料，需要將喷輕體拆解，因此有維修不 便之問題。 【發明内容3 發明概要 發明欲解決之課題 本發明是為解決前述習知技術之問題而創作完成者， 二:明：目的在於提供一種可藉由以簡單之構造來防止氣 處理室前相互混合’且可讓氣體均-地混合並均一 地喷射至處理室⑽而可節省成本之心防止氣體混合之 201213598 大面積沈積裝置。 本發明之其他目的係提供一種維修簡便之用以防止氣 體混合之大面積沈積裝置。 用以欲解決課題之手段 為達成前述目的，本發明之用以防止氣體混合之大面 積沈積裝置其特徵在於包含有：處理室，係提供用以將預 定物質沈積於基板上之沈積空間；複數個供給埠，係設於 前述處理室之一側，將氣體供給至前述處理室之内部；複 數個供給管線，係配置於前述處理室之内部，且連接於前 述各供給埠；及複數個喷射喷嘴，係配置於投入至前述處 理室之前述基板之上方，沿前述各供給管線連接且彼此交 互地配置，將互為不同之氣體交互地喷出至前述基板之上 方面。 發明效果 本發明之用以防止氣體混合之大面積沈積裝置係適用 多管構造之喷射喷嘴，由於各個氣體是供給至互為不同的 喷射喷嘴，因此氣體由處理室喷出時，是均一地混合並均 一地噴出至處理室的内部。即，可以簡單的構造防止氣體 在流入處理室的内部前混合，且可均一地混合氣體並使之 均一地喷出至處理室的内部，故，具有可縮減成本之功效。 又，喷射喷嘴係一邊朝左右振動一邊喷出氣體，因此 氣體更均一地混合且更均一地喷出至處理室内之基板，具 有沈積於基板之膜的品質提昇之功效。 再者，由於可將各個噴射喷嘴各自分開地進行修理或 201213598 洗淨，故，具有維修作業簡便之功效。 圖式簡單說明 第1圖係本發明一實施形態之用以防止氣體混合之大 面積沈積裝置的平面圖。 第2圖係第1圖之I-Ι剖面圖。 第3圖係第2圖之’’X”部的放大圖。 第4圖係第2圖之’’Y”部的放大圖。 第5圖係本發明一實施形態之用以防止氣體混合之大 面積沈積裝置的供給管線之立體圖。 第6圖係與第5圖所示之一個供給管線及喷射喷嘴相關 的立體圖。 第7圖係第1圖之II-II剖面圖。 第8圖係與第6圖所示之喷射喷嘴相關的剖面圖。 第9圖係第8圖所示之連接器部位的部分切開立體圖。 第10圖係第5圖之平面圖。 【實施方式3 較佳實施例之詳細說明 與後述之本發明相關的詳細說明，係參照例示可實施 本發明之特定的實施形態之添附圖式。該等實施形態係充 分地詳細說明，俾讓該技術領域業者可實施本發明。本發 明之多樣性的實施形態係各自不同，需理解並無非得相互 的排他之必要性。譬如，此處所記載之特定的形狀、特定 的構造及特性係與實施形態相關，在不脫逸本發明之精神 及範圍之範圍内係可以其他的實施形態加以實現。又，需 6 201213598 里解刀別揭不之實施形態中的個別構成要件之位置及配 置在不脫逸本發明之精神及範圍之範圍内係可以加以變 更。因此’後述之詳細說明並_定的意思，本發明之範 圍於適切地加以說明之場合，係僅輯有與其巾請專利範 圍所主張者均等的範圍以及添附的中請專利範圍加以限 定。圖式所示之實施形態的長度、面積、厚度及形態係便 宜上誇張地表現。 以下，參照添附圖式詳細說明本發明之構成。 參照第1圖及第2圖，本發明_實施形態之用以防止氣 體混合之大面積沈積襞置係包含處理室c '設於處理室匚之 内部且發揮加熱基板A之加熱器功能之基座s(suscept〇r)、 設於處理室C之一側且容許基板A進出之閘閥G、及設置於 處理室C之外側且將處理室c内之空氣加以排氣之真空泵 (未圖式）。 除為了基板A之進出而開放閘閥G之場合，處理室（：係 提供用以將預定的物質沈積於基板A之密閉的空間。基板A 係載置於複數個銷腳P上而進行沈積。 於處理室C之上側部位’設有供給氣體之複數個供給皡 100，於處理室C之内部，配置有複數條連結於各供給谭 100，供給沈積氣體之供給管線110。供給管線110係氣體或 蒸氣等可流動且移動之管路。 於供給管線110之下方，設有複數個喷射喷嘴12〇。喷 射喷嘴120係形成有孔洞之管路，俾可將於供給管線11〇之 内部移動的氣體噴出至外部。喷射喷嘴120係於處理室c之 201213598 内配置於基板A之上方’且沿各供給管線11〇而 交互配 置，將其他的氣體交互地供給至基板A之上方面。 喷射嗔嘴12〇係-列緊密地配置於基板A之上方，將沈 積氣體均—地喷射至相當於大面積之基板A。由喷射喷嘴 喷射出之相互不同的氣體，係邊加以喷出邊讓喷射區域 疊合’因此相互混合^_於大面積的基板紅沈積為均一 的厚度。 參照第1圖至第4圖，於處理室c之上面部，設有用以讓 喷射噴嘴120於大面積之基板八上穩定地振動，提高互為不 同的氣體於基板A混合且沈積之效率的振動用氣壓缸13〇。 氣C虹13〇於構成上係連接於喷射喷嘴丨，俾可讓喷射喷 嘴120振動。 即’於氣壓缸130連接有僅線狀移動氣壓缸13〇提供之 衝程之軸桿135 ’及交又地結合於軸桿135並將軸桿135之振 動位移傳達至喷射喷嘴12〇之喷嘴支撐架140。氣壓缸130係 可以設有能電性地進行振動之軸的振動馬達替代。又，氣 壓缸130係可以能讓馬達之旋轉運動機械性地進行往復運 動之往復機構替代。即’氣壓缸130係提供用以讓喷射喷嘴 120振動之往復運動的驅動體。 此時，軸桿135係可複數個設置於處理室c上。如圖所 示，軸桿135係可於處理室C之上方面設置三個。三個軸桿 135中’左側的兩個係與氣壓缸130及位在下方的噴嘴支撐 架140連接，右側的一個僅與位在下方的喷嘴支撐架14〇連 接。軸桿135及喷嘴支撐架140係數量可多樣地變更，俾支 201213598 標以懸吊於處理室C之形態而設置之噴射喷嘴120的重量， 且可於嘴射噴嘴120振動時保持均衡。即，圖示之例係支樓 喷射噴嘴12〇之三個部分’但為提高安全性，亦可以支撐兩 側的兩個部分之四部分的支稽構造加以製作，進而亦可以 五或六部分之支撐構造加以製作。 另一方面，於氣壓缸130之缸桿131係連接有滑動地進 订移動之移動台136，於移動台136之兩側，結合有兩個軸 杯135 °又，於移動台136之兩側設有滑管137，滑管137挾 於導引滑管137移動之導桿138。此時，導桿138之兩側端部 係結合於固定台139，並固定於處理室C上。 兩個轴桿135係經由移動台136而連接於氣壓缸丨3〇之 缸桿131，並藉由缸桿131—起進行運動。導桿138及滑管137 亦可以用以傳達氣壓缸131之直線運動的其他滑動機構替 代。採用滑管137及導桿138係由於滑動運動時，導桿138相 _滑管137之約束力較佳之故。 參照第2圖，於處理室C之左側及右側設有軸桿丨％。左 側之軸桿135係傳達氣壓缸130之驅動力，右側之軸桿135連 接於嘴射噴嘴12〇之其他部位 ，發揮導引噴射噴嘴12〇之移 動的功欵。噴嘴支撐架140係由處理室C之上部往下方延 伸，上端結合於軸桿135，下端部連接於噴射噴嘴。 喊缸13G係於1地配置之複數個噴射噴嘴_彼此 州钱之噴射噴嘴12〇與嘴射喷嘴12G之間振動。 個嗔射嗔嘴12〇係分別以2〇_之間隔配置， _ 之兩種氣體交互噴射，任意之噴射喷嘴12〇的振動位 201213598 為 40mm。 參照第2圖、第3圖及第4圖，於處理室C之左側上面部， 設有可降低氣壓缸130之缸桿131及軸桿135之軸線誤差並 讓振動減弱之浮動接頭141。 一般上，並不易正確的讓氣壓缸13〇之缸桿131與軸桿 135之移動路徑一致地安裝於處理室c之上面部。設若在氣 壓缸130之缸桿131與軸桿135之移動路徑與直線不—致之 狀態，與缸桿131連接之軸桿135反覆接受不一致之軸力 時，氣壓缸130及軸桿135之耐久性會降低。此時，浮動接 頭141於缸桿131及軸桿135之間的動力傳達軸線不—致 時，將進行緩和的動力傳達。 於處理室c之左右側的上面部設有軸套145，該軸套 提供軸桿135通過且加以密閉之空間，係可移動地設置於轴 桿135之兩側端部。軸套145發揮密閉軸桿135之移動路徑的 功能，而環繞且封閉突出於軸套145兩側之軸桿135之密閉 導件146係設於軸套145。 密閉導件146與轴套145之間，作為用以維持氣密之各 種密閉機構’亦可設置金屬材質之〇型環(未圖式)及橡膠環 (未圖式）等。於設置在轴套145之右側的密閉導件146，設二 可緩和於氣壓缸130由軸桿135傳達之衝擊的波紋管。 波紋管147係插入有軸桿135之通路所形成的波纹管。 又’於左右密閉導件146’固定地設有插入有軸桿135之軸 承148。抽承148係導引軸桿135之直線運動，亦發揮密閉導 件146相對於外部的氣密功能。 201213598 參照第3圖至第5圖，供給管線110係固定於支撐體150 之周圍。支撐體150係位於基板A上，並以藉由結合於軸桿 135之嘴嘴支撐架140而懸吊於處理室C之内部的形態加以 設置。 支撐體150為四角形之框體，喷射喷嘴120係一列地設 於支撐體150之下方，大致將支撐體150之内側空間封閉。 供給管線110係藉由固定塊151而固定於支撐體150。於 固定塊151之兩側部分，係形成有剖面為圓形之供給管線 110—半插入且可緊縮之半圓形的溝152。固定塊151係藉由 譬如螺絲或螺栓之連結機構而固定於支撐體150上。固定塊 151係沿著配置於四角形之支撐體15〇上的供給管線110而 以預定的間隔加以配設。 參照第5圖’於支撐體150之上面部設置供給管線11〇， 於支撐體150之下方一列地配置有噴射喷嘴12〇。喷射喷嘴 120係設置於支撐體150中與長度較長者相當的橫方向交叉 的縱方向。因此，複數個喷射喷嘴120係沿基板a之長向方 向配置，與四角形之基板A對應而形成四角形。第5.5世代 基板A之場合，喷射喷嘴120係提供長方形且與15〇〇mmx 1300mm對應之面積。即，喷射喷嘴12〇亦可與支撐體15〇之 長度較短之縱方向交又而設置。於第6圖顯示供給管線11〇 與噴射喷嘴120之連接關係。即，於供給管線11〇之底面結 合有第1連接管161 ’於噴射喷嘴120之上方面，與第丨連接 管161對應而結合有第2連接管162，第丨連接管161及第2連 接管162係經連接器163而相互連接。此時，第丨連接管i6i 201213598 係貫通支撐體150(參照第5圖）而結合於連接器163。連接器 163係接頭構件。 參照第7圖，於複數個供給埠100與供給管線11〇之間， δ又有波紋管164。波紋管164係連接供給埠與供給管線 110 ’且可對應供給埠1〇〇而容許供給管線11〇之左右流動地 加以伸縮。波紋管164並不直接連接於供給管線11()，是經 由接頭連接之其他的供給用皡而連接於供給管線11 〇。 參照第8圖及第9圖，喷射喷嘴120係呈同心之雙管構 成。即，喷射喷嘴120是由第1管171及第2管172構成，前述 第1管171係連接於供給管線no，且形成有自供給管線110 接受氣體並朝上方喷出氣體之第1孔171a，前述第2管172是 環繞第1管171並形成有朝下方喷出氣體之第2孔172a。 第1管171之第1孔171a相較於第2管172之孔，孔間的間 隔係較大地形成。大致上，第1管171之兩個第1孔171a，係 可對應第2管Π2之五個第2孔n2a而供給沈積氣體。經由第 1管171之第1孔171a而喷出之沈積氣體係沿第2管172移 動’於均一地擴散之狀態於下方流動，且經由第2管172之 第2孔172a而均一地朝下方喷出。 另一方面，喷射喷嘴120亦可以三層以上之多管構造加 以製作。此時，於各管噴出氣體之孔的方向係相互的相反， 最終仍有利於氣體均一的喷出。 第10圖係第5圖之平面圆，顯示供給於第1圖與第7圖之 兩個供給埠100的沈積氣體之流動方向。作為參考，第6圖 及第9圖所示之箭頭係顯示由一個喷射喷嘴120喷出之沈積 12 201213598 氣體的流動方向。 與第2圖一併參考第5圖至第10圖，說明本發明一實施 形態之用以防止氣體混合之大面積沈積裝置的氣體混合與 流動及沈積過程。 經第2圖所示之兩個各供給谭100流入之沈積氣體的供 給原料，係譬如Zn及〇2。基板A以基座S加熱至一定溫度 後’ Zn及〇2之供給原料流入至各供給埠1〇〇。zn之供給原料 可使用Zn有機化合物之DEZ(diethylzinc :二乙基鋅），〇2之 供給原料可使用〇2。此時，由於DEZ不為常溫且氣體狀態， 因此於讓溫度上升至譬如1〇〇。匸程度，並讓DEZ由固體及液 體狀態變換成氣體狀態後，供給至一個供給埠100。〇2之供 給原料之〇2係常溫且為氣體狀態，因此直接供給至其他的 供給埠100。 各供給原料之沈積氣體係供給至連接於各供給蟑1 〇〇 之各供給管線110 ,將形成為四角形之供給管線110充滿。 之後，各沈積氣體係經相對於各供給管線110連接於橫方向 之喷射噴嘴120而朝下方喷射。此時，喷射喷嘴12〇係以雙 管構成，經第1管171之第1孔171a於上方流動，而沿第2管 172擴散之沈積氣體，是經第2管172之第2孔17仏而喷出至 位於下方的基板A。 另一方面，氣壓缸130之缸桿131係進行往復運動，缸 桿131是讓設於軸套145之軸桿135進行往復運動。軸桿135 係一邊僅運動預先設定之缸桿131之衝程，一邊藉由往復運 動而讓結合於支撐體150之喷嘴支撐架14〇振動。喷嘴支撐 13 201213598 架MO振動時，設於喷嘴切架⑽下部之喷射喷嘴i2〇係邊 往兩側進行往復運動邊加以振動。此時，複數個喷射喷嘴 120中，任意之喷射喷嘴120之振動範圍係可於任意之喷射 喷嘴120與最為鄰接之喷射喷嘴120間之間隔内進行設定。 譬如本實施形態中，複數個喷射噴嘴12〇係由交替之DEZ氣 體喷射喷嘴120及〇2氣體喷射喷嘴12〇構成，而任意之dez 氣體喷射喷嘴120之振動範圍，可為任意之DEZ氣體喷射喷 嘴120以及與其最為鄰接之〇2氣體喷射喷嘴120之間隔的兩 倍。 如此，藉由氣壓缸130之振動，各個喷射噴嘴12〇係邊 讓各為不同的沈積氣體交換位置邊加以喷射，而噴射出之 沈積氣體則由上方往下方邊形成鋸齒的波形邊到達基板A 側。此時’沈積氣體之DEZ氣體與〇2氣體係藉由喷射噴嘴 120之振動而更易於混合地喷射至基板A，並藉由氧化/還原 等的化學反應而以一定的厚度之Zn0沈積於基板A上。 與前述之本發明之實施形態相關的圖式’係省略詳細 之輪廓線而概略地顯示，俾易於知曉屬於本發明之技術思 想的部分。又’前述之實施形態並非限定本發明之技術思 想的基準，僅為用以理解包含於本發明之申請專利範圍的 技術事項之參照事項° 【圖式簡單説明】 第1圖係本發明一實施形態之用以防止氣體混合之大 面積沈積裝置的平面圖。 第2圖係第1圖之Η剖面圖。 201213598 第3圖係第2圖之’’X”部的放大圖。 第4圖係第2圖之’’Y”部的放大圖。 第5圖係本發明一實施形態之用以防止氣體混合之大 面積沈積裝置的供給管線之立體圖。 第6圖係與第5圖所示之一個供給管線及喷射喷嘴相關 的立體圖。 第7圖係第1圖之ΙΙ-ΙΙ剖面圖。 第8圖係與第6圖所示之喷射喷嘴相關的剖面圖。 第9圖係第8圖所示之連接器部位的部分切開立體圖。 第10圖係第5圖之平面圖。 【主要元件符號說明】 100..供給埠 146...密閉導件 110...供給管線 147...波紋管 120...喷射喷嘴 148...軸承 130...振動用氣壓缸 150...支撐體 131…缸桿 151...固定塊 135...轴桿 152...溝 136...移動台 161...第1連接管 137...滑管 162…第2連接管 138...導桿 163...連接器 139...固定台 164...波紋管 140...喷嘴支撐架 171...第 1管 141...浮動接頭 171a···第 1孔 145...軸套 172...第2管 15 201213598 172a…第2孔 G...閘閥 A...基板 S...基座 C...處理室 P··.銷腳 16201213598 VI. Description of the Invention: Technical Field of the Invention The present invention relates to a large-area deposition apparatus for preventing gas mixing, which prevents gas from mixing with each other before gas flows into the interior of the processing chamber. The gases are uniformly mixed with each other and uniformly injected into the interior of the processing chamber. [Previous Art 1 BACKGROUND OF THE INVENTION Thin film deposition technology by chemical vapor deposition (CVD)" in an insulating layer and an active layer of a semiconductor element, a transparent electrode of a liquid crystal display element, a light-emitting layer of a light-emitting display element, and protection It is very important in various application fields such as layers. Generally, the physical properties of a film deposited by CVD are highly sensitive to process conditions such as deposition pressure, deposition temperature, deposition time, and the like. For example, the composition, density, adhesion, and deposition rate of the deposited film change due to changes in deposition pressure. The chemical vapor deposition method is divided into LPCVD (Low Pressure Chemical Vapor Deposition), APCVD (Atmospheric Pressure Chemical Vapor Deposition '·Atmospheric Pressure Chemical Vapor Deposition), and LTCVD (Low Temperature Chemical Vapor Deposition). Chemical vapor deposition method, PECVD (Plasma Enhanced Chemical Vapor Deposition), MOCVD (Metal Organic Chemical Vapor Deposition: 201213598 organometallic chemical vapor deposition method), and the like. Among them, MOCVD is a technique in which a metal organic compound is used as a precursor and a vapor of a metal organic compound having a high vapor pressure is sent to a surface of a substrate heated in a processing chamber. This grows into the desired film. The MOCVD system is excellent in step coverage and has no damage to the surface of the substrate and the crystal, so that it can be grown into a film of high purity and high quality. Furthermore, the deposition rate is faster, the process time can be shortened, and the productivity is also excellent. In the conventional MOCVD apparatus, in order to uniformly eject the gas, it is necessary to form a nozzle having a plurality of micropores, so that there is a problem of an increase in cost. In particular, conventional MOCVD apparatuses have to process nozzles into more complicated shapes in order to prevent two or more gases used in film deposition from being mixed before ejection and undesirably deposited. Therefore, there is a problem that the cost of the M〇CVD device is further increased. Further, since the conventional MOCVD apparatus is clogged with the gas injection holes of the heads without being repaired or washed, it is necessary to disassemble the light-spraying body, which causes a problem of inconvenience in maintenance. SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art described above. 'And the 201213598 large-area deposition apparatus that allows the gas to be uniformly mixed and uniformly injected into the processing chamber (10) to save cost and prevent gas mixing. Another object of the present invention is to provide a large-area deposition apparatus which is easy to maintain and which prevents gas mixing. Means for Solving the Problems In order to achieve the above object, a large-area deposition apparatus for preventing gas mixing according to the present invention is characterized by comprising: a processing chamber for providing a deposition space for depositing a predetermined substance on a substrate; The supply port is disposed on one side of the processing chamber to supply gas to the inside of the processing chamber; a plurality of supply lines are disposed inside the processing chamber and connected to the respective supply ports; and a plurality of injections The nozzles are disposed above the substrate placed in the processing chamber, are connected along the respective supply lines, and are alternately arranged to each other, and mutually discharge different gases to the substrate. Advantageous Effects of Invention The large-area deposition apparatus for preventing gas mixing of the present invention is applied to a spray nozzle of a multi-tube structure, and since each gas is supplied to injection nozzles different from each other, gas is uniformly mixed when being ejected from the treatment chamber. It is uniformly sprayed to the inside of the processing chamber. Namely, it is possible to prevent the gas from being mixed before flowing into the inside of the processing chamber in a simple configuration, and it is possible to uniformly mix the gases and uniformly discharge them into the inside of the processing chamber, thereby having the effect of reducing the cost. Further, since the jet nozzle ejects gas while vibrating to the right and left, the gas is more uniformly mixed and more uniformly ejected to the substrate in the processing chamber, thereby improving the quality of the film deposited on the substrate. Furthermore, since each of the injection nozzles can be separately repaired or washed in 201213598, it has the effect of facilitating maintenance work. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a large-area deposition apparatus for preventing gas mixing according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line I-Ι of Fig. 1. Fig. 3 is an enlarged view of a portion of the ''X' portion of Fig. 2', and Fig. 4 is an enlarged view of a portion of the ''Y' of Fig. 2). Fig. 5 is a perspective view showing a supply line of a large-area deposition apparatus for preventing gas mixing according to an embodiment of the present invention. Fig. 6 is a perspective view showing a supply line and a spray nozzle shown in Fig. 5. Figure 7 is a cross-sectional view taken along line II-II of Figure 1. Fig. 8 is a cross-sectional view showing the spray nozzle shown in Fig. 6. Fig. 9 is a partially cutaway perspective view of the connector portion shown in Fig. 8. Figure 10 is a plan view of Figure 5. [Embodiment 3] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S) The detailed description of the present invention described below will be described with reference to the accompanying drawings. The embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. The embodiments of the diversity of the present invention are different, and it is necessary to understand that there is no need for mutual exclusivity. For example, the specific shapes, specific structures, and characteristics described herein are related to the embodiments, and may be implemented in other embodiments without departing from the spirit and scope of the invention. Further, the position and arrangement of the individual constituent elements in the embodiment of the present invention can be changed without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention will be described in detail, and the scope of the present invention will be limited to the scope of the patent claims and the scope of the appended patent. The length, area, thickness and form of the embodiment shown in the drawings are preferably exaggerated. Hereinafter, the configuration of the present invention will be described in detail with reference to the accompanying drawings. Referring to Figures 1 and 2, the large-area deposition apparatus for preventing gas mixing according to the present invention includes a processing chamber c' disposed inside the processing chamber and functioning as a heater function for heating the substrate A. a seat s (suscept〇r), a gate valve G provided on one side of the processing chamber C and allowing the substrate A to enter and exit, and a vacuum pump disposed on the outer side of the processing chamber C and exhausting the air in the processing chamber c (not shown) ). In the case where the gate valve G is opened for the entry and exit of the substrate A, the processing chamber (provides a sealed space for depositing a predetermined substance on the substrate A. The substrate A is placed on a plurality of pins P for deposition. A plurality of supply ports 100 for supplying a gas are provided in the upper portion of the processing chamber C. Inside the processing chamber C, a plurality of supply lines 110 connected to the respective supply tans 100 and supplying the deposition gas are disposed. The supply line 110 is a gas. Or a flowable and movable pipeline such as steam. Below the supply line 110, a plurality of injection nozzles 12A are provided. The injection nozzles 120 are formed with holes for the tubes to be moved inside the supply line 11〇. The gas is ejected to the outside. The injection nozzles 120 are disposed above the substrate A in 201213598 of the processing chamber c and are alternately disposed along the respective supply lines 11 to alternately supply other gases to the substrate A. The nozzle 12 is arranged closely above the substrate A, and the deposition gas is uniformly sprayed to the substrate A corresponding to a large area. The mutually different gases ejected by the ejection nozzle are tied The ejection area is superimposed and thus the ejection areas are superimposed. Therefore, the large-area substrate red is deposited to have a uniform thickness. Referring to FIGS. 1 to 4, the surface above the processing chamber c is provided for the ejection nozzle. 120 is stably vibrated on a large-area substrate VIII, and the vibration pneumatic cylinder 13 提高 is used to increase the efficiency of mixing and depositing different gases on the substrate A. The gas C rainbow 13 is connected to the spray nozzle 构成, 俾The injection nozzle 120 can be vibrated. That is, the shaft 135' of the stroke provided by only the linear moving pneumatic cylinder 13 is connected to the pneumatic cylinder 130, and the shaft 135 is coupled to the shaft 135 and the vibration displacement of the shaft 135 is transmitted to The nozzle holder 140 of the spray nozzle 12 is disposed. The pneumatic cylinder 130 may be provided with a vibration motor capable of electrically vibrating the shaft. Further, the pneumatic cylinder 130 may mechanically reciprocate the rotational motion of the motor. The reciprocating mechanism is substituted. That is, the 'pneumatic cylinder 130 is provided with a driving body for reciprocating movement of the injection nozzle 120. At this time, the shaft 135 can be disposed in plurality on the processing chamber c. As shown, the shaft 135 Can be Three on the upper side of the chamber C. Two of the three shafts 135 are connected to the pneumatic cylinder 130 and the nozzle support 140 below, and one of the right sides is only connected to the nozzle support 14 below. The coupling amount of the shaft 135 and the nozzle support frame 140 can be variously changed, and the weight of the injection nozzle 120 which is suspended in the form of the processing chamber C is set and can be maintained when the nozzle 120 is vibrated. Equilibrium. That is, the illustrated example is the three parts of the branch spray nozzle 12' but for the purpose of improving safety, it can also be constructed by supporting the four parts of the two parts on both sides, and then it can be five or The six-part support structure is manufactured. On the other hand, the cylinder rod 131 of the pneumatic cylinder 130 is connected to the movable table 136 which is slidably moved, and two axial cups are combined on the two sides of the movable table 136. A sliding tube 137 is disposed on both sides of the moving table 136, and the sliding tube 137 is disposed on the guiding rod 138 for guiding the sliding tube 137 to move. At this time, the both end portions of the guide bar 138 are coupled to the fixing table 139 and fixed to the processing chamber C. The two shafts 135 are connected to the cylinder rod 131 of the pneumatic cylinder 3 via the moving table 136, and are moved by the cylinder rod 131. The guide bar 138 and the slide tube 137 can also be substituted for other sliding mechanisms for conveying the linear motion of the pneumatic cylinder 131. The sliding tube 137 and the guide rod 138 are preferred because of the restraining force of the guide rod 138 phase sliding tube 137 due to the sliding movement. Referring to Fig. 2, a shaft 丨% is provided on the left and right sides of the processing chamber C. The left shaft 135 transmits the driving force of the pneumatic cylinder 130, and the right shaft 135 is connected to the other portion of the nozzle 112, and functions to guide the movement of the injection nozzle 12. The nozzle holder 140 extends downward from the upper portion of the processing chamber C, the upper end is coupled to the shaft 135, and the lower end is coupled to the injection nozzle. The squealing cylinder 13G is a plurality of injection nozzles arranged in one state, and is oscillated between the injection nozzles 12A of the state money and the nozzles 12G of the nozzles. The 嗔 嗔 〇 〇 〇 〇 配置 配置 配置 配置 配置 配置 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 分别 两种 两种 两种 两种 两种 两种Referring to Fig. 2, Fig. 3, and Fig. 4, a floating joint 141 for reducing the axial error of the cylinder rod 131 and the shaft 135 of the pneumatic cylinder 130 and attenuating the vibration is provided on the upper left surface portion of the processing chamber C. In general, it is not easy to correctly mount the cylinder rod 131 of the pneumatic cylinder 13 in the upper surface of the processing chamber c in conformity with the movement path of the shaft 135. It is assumed that if the moving path and the straight line of the cylinder rod 131 and the shaft 135 of the pneumatic cylinder 130 are not in a state, and the shaft 135 connected to the cylinder rod 131 repeatedly receives an inconsistent axial force, the pneumatic cylinder 130 and the shaft 135 are durable. Sex will decrease. At this time, when the power transmission axis between the cylinder rod 131 and the shaft 135 is not caused by the floating joint 141, the mitigating power transmission is performed. A sleeve 145 is provided on the upper surface of the left and right sides of the processing chamber c. The sleeve provides a space through which the shaft 135 passes and is slidably disposed at both ends of the shaft 135. The sleeve 145 functions to close the moving path of the shaft 135, and the sealing guide 146 that surrounds and closes the shaft 135 protruding from both sides of the sleeve 145 is attached to the sleeve 145. A herring ring (not shown) and a rubber ring (not shown) of a metal material may be provided between the hermetic guide 146 and the boss 145 as various sealing mechanisms for maintaining airtightness. The airtight guide 146 disposed on the right side of the sleeve 145 is provided with a bellows which can be relieved by the impact of the pneumatic cylinder 130 by the shaft 135. The bellows 147 is a bellows formed by the passage of the shaft 135. Further, a bearing 148 into which the shaft 135 is inserted is fixedly provided to the right and left closed guides 146'. The linear motion of the 148 series guide shaft 135 also exerts a hermetic function of the hermetic guide 146 with respect to the outside. 201213598 Referring to FIGS. 3 to 5, the supply line 110 is fixed around the support 150. The support body 150 is placed on the substrate A and is disposed in a state of being suspended inside the processing chamber C by being coupled to the nozzle holder 140 of the shaft 135. The support body 150 is a quadrangular frame, and the spray nozzles 120 are arranged one below the support body 150 to substantially close the inner space of the support body 150. The supply line 110 is fixed to the support 150 by a fixing block 151. On both side portions of the fixed block 151, a supply line 110 having a circular cross section is formed, a semi-inserted and constrictible semicircular groove 152. The fixing block 151 is fixed to the support body 150 by a coupling mechanism such as a screw or a bolt. The fixing block 151 is disposed at predetermined intervals along the supply line 110 disposed on the support body 15 of the square shape. Referring to Fig. 5, a supply line 11A is provided on the upper surface of the support body 150, and an injection nozzle 12A is disposed in a row below the support body 150. The injection nozzles 120 are provided in the longitudinal direction in which the lateral direction intersects with the longer length of the support body 150. Therefore, the plurality of ejection nozzles 120 are arranged along the longitudinal direction of the substrate a, and form a quadrangular shape corresponding to the rectangular substrate A. In the case of the 5.5th generation substrate A, the ejection nozzle 120 is provided with a rectangular shape and an area corresponding to 15 mm x 1300 mm. That is, the injection nozzle 12A may be provided in parallel with the longitudinal direction in which the length of the support body 15 is short. Fig. 6 shows the connection relationship between the supply line 11A and the injection nozzle 120. In other words, the first connection pipe 161' is coupled to the injection nozzle 120 on the bottom surface of the supply line 11A, and the second connection pipe 162 is coupled to the second connection pipe 161, and the second connection pipe 161 and the second connection are coupled. The tubes 162 are connected to each other via a connector 163. At this time, the second connection pipe i6i 201213598 is coupled to the connector 163 through the support 150 (see FIG. 5). Connector 163 is a joint member. Referring to Fig. 7, between the plurality of supply ports 100 and the supply line 11A, δ has a bellows 164. The bellows 164 is connected to the supply port and the supply line 110' and can be expanded and contracted by allowing the supply line 11 to flow to the left and right in response to the supply of the port. The bellows 164 is not directly connected to the supply line 11 (), but is connected to the supply line 11 by another supply port connected via a joint. Referring to Figures 8 and 9, the spray nozzle 120 is constructed as a concentric double tube. In other words, the injection nozzle 120 is constituted by the first pipe 171 and the second pipe 172, and the first pipe 171 is connected to the supply line no, and the first hole 171a that receives the gas from the supply line 110 and discharges the gas upward is formed. The second tube 172 surrounds the first tube 171 and is formed with a second hole 172a that discharges gas downward. The first hole 171a of the first tube 171 is formed larger than the hole of the second tube 172, and the interval between the holes is large. In general, the two first holes 171a of the first tube 171 can supply the deposition gas in accordance with the five second holes n2a of the second tube 2. The deposition gas system discharged through the first hole 171a of the first tube 171 moves along the second tube 172 to flow uniformly under the state of being diffused uniformly, and is uniformly downward through the second hole 172a of the second tube 172. ejection. On the other hand, the injection nozzle 120 can also be fabricated in a multi-tube configuration of three or more layers. At this time, the directions of the holes for ejecting the gas in the respective tubes are opposite to each other, and finally it is advantageous to uniformly discharge the gas. Fig. 10 is a plan view of Fig. 5 showing the flow direction of the deposition gas supplied to the two supply ports 100 of Figs. 1 and 7. For reference, the arrows shown in Figs. 6 and 9 show the flow direction of the deposition of 201213598 gas ejected by a spray nozzle 120. Referring to Fig. 5 to Fig. 10 together, a gas mixing and flow and deposition process for a large-area deposition apparatus for preventing gas mixing according to an embodiment of the present invention will be described. The raw materials for the deposition gas into which the two supply tans 100 are shown in Fig. 2 are, for example, Zn and ruthenium. After the substrate A is heated to a certain temperature by the susceptor S, the supply materials of Zn and 〇2 flow into the respective supply ports 1埠. The raw material of zn can be used as DEZ (diethylzinc: diethylzinc) of Zn organic compound, and 〇2 can be used as a raw material for 〇2. At this time, since DEZ is not at a normal temperature and a gas state, the temperature is raised to, for example, 1 Torr. The degree of enthalpy, and the DEZ is converted into a gaseous state from the solid state and the liquid state, and then supplied to a supply port 100. Since the raw material 2 of the crucible 2 is at a normal temperature and in a gaseous state, it is directly supplied to the other supply crucible 100. The deposition gas system of each of the supply raw materials is supplied to each supply line 110 connected to each of the supply ports 1 to fill the supply line 110 formed in a quadrangular shape. Thereafter, each of the deposition gas systems is sprayed downward by being connected to the injection nozzles 120 in the lateral direction with respect to the respective supply lines 110. At this time, the injection nozzle 12 is configured by a double pipe, and flows through the first hole 171a of the first pipe 171, and the deposition gas diffused along the second pipe 172 passes through the second hole 17 of the second pipe 172. It is ejected to the substrate A located below. On the other hand, the cylinder rod 131 of the pneumatic cylinder 130 reciprocates, and the cylinder rod 131 reciprocates the shaft 135 provided on the boss 145. The shaft 135 vibrates the nozzle support frame 14 coupled to the support body 150 by reciprocating motion while moving only the stroke of the predetermined cylinder rod 131. Nozzle support 13 201213598 When the MO vibration is applied, the spray nozzle i2 provided at the lower part of the nozzle cutter (10) vibrates while reciprocating to both sides. At this time, among the plurality of injection nozzles 120, the vibration range of any of the injection nozzles 120 can be set in the interval between any of the injection nozzles 120 and the most adjacent injection nozzles 120. For example, in the present embodiment, the plurality of injection nozzles 12 are composed of alternating DEZ gas injection nozzles 120 and 〇2 gas injection nozzles 12, and the vibration range of any dez gas injection nozzles 120 can be any DEZ gas injection. The nozzle 120 is twice as long as the 〇2 gas jet nozzle 120 that is most adjacent thereto. In this way, by the vibration of the pneumatic cylinder 130, each of the injection nozzles 12 is sprayed at a different deposition gas exchange position, and the sprayed deposition gas forms a sawtooth waveform from the upper side to the lower side to reach the substrate A. side. At this time, the DEZ gas and the helium gas system of the deposition gas are more easily mixed and sprayed onto the substrate A by the vibration of the ejection nozzle 120, and are deposited on the substrate with a certain thickness of Zn0 by a chemical reaction such as oxidation/reduction. A. The drawings relating to the above-described embodiments of the present invention are schematically shown with a detailed outline omitted, and the parts belonging to the technical idea of the present invention are easily known. Further, the above-described embodiments are not intended to limit the technical idea of the present invention, and are merely a reference for understanding the technical matters included in the scope of the patent application of the present invention. [Simplified description of the drawings] FIG. 1 is an embodiment of the present invention. A plan view of a large area deposition apparatus for preventing gas mixing. Fig. 2 is a cross-sectional view taken along line 1. 201213598 Fig. 3 is an enlarged view of a portion of the ''X' portion of Fig. 2) Fig. 4 is an enlarged view of a portion of the ''Y' portion of Fig. 2). Fig. 5 is a perspective view showing a supply line of a large-area deposition apparatus for preventing gas mixing according to an embodiment of the present invention. Fig. 6 is a perspective view showing a supply line and a spray nozzle shown in Fig. 5. Figure 7 is a cross-sectional view of Figure 1 of Figure 1. Fig. 8 is a cross-sectional view showing the spray nozzle shown in Fig. 6. Fig. 9 is a partially cutaway perspective view of the connector portion shown in Fig. 8. Figure 10 is a plan view of Figure 5. [Description of main component symbols] 100. Supply 埠 146... Closed guide 110... Supply line 147... Bellows 120... Injection nozzle 148... Bearing 130... Vibration pneumatic cylinder 150 ...support body 131...cylinder rod 151...fixing block 135...shaft rod 152...groove 136...moving table 161...first connecting pipe 137...sliding pipe 162...second Connecting pipe 138...guide bar 163...connector 139...fixing table 164...corrugated pipe 140...nozzle support frame 171...first pipe 141...floating joint 171a··· First hole 145... Bushing 172... Second tube 15 201213598 172a... Second hole G... Gate valve A... Substrate S... Base C... Processing chamber P··. Pin Foot 16