CN104195528A - High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device - Google Patents

High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device Download PDF

Info

Publication number
CN104195528A
CN104195528A CN201410449665.0A CN201410449665A CN104195528A CN 104195528 A CN104195528 A CN 104195528A CN 201410449665 A CN201410449665 A CN 201410449665A CN 104195528 A CN104195528 A CN 104195528A
Authority
CN
China
Prior art keywords
plate
chemical vapor
vapor deposition
jet
frequency vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410449665.0A
Other languages
Chinese (zh)
Inventor
郑建毅
杨群峰
庄明凤
郑高峰
陈新敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen University
Original Assignee
Xiamen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen University filed Critical Xiamen University
Priority to CN201410449665.0A priority Critical patent/CN104195528A/en
Publication of CN104195528A publication Critical patent/CN104195528A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to the technical field of chemical vapor deposition and provides a high-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device. The high-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device comprises a gas supply system, an exhaust system, a vacuum reaction chamber, a support, a gas ejection system, a vibration exciter, a deposition table and an electric control device. The high-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device is characterized in that the exhaust system is adopted to vacuumize a vacuum chamber, a radio-frequency electric field is formed between an ejection plate connected with a positive electrode of a radio-frequency power source RF and a carrying plate connected with a negative electrode of the radio-frequency power source RF, the gas supply system is capable of providing an inert gas and a reactant gas, the reactant gas ejected by the gas ejection system is induced by the radio-frequency electric field to glow discharge so as to generate a large amount of electrons, a thin film can be deposited on the surface of a collection sheet by virtue of a series of chemical reactions, and then the heating power of a heating sheet, the vibration frequency of the vibration exciter, the power of the radio-frequency power source RF and the space between the ejection plate and the carrying plate are regulated so that a thin film better in quality can be deposited by virtue of parameter adjustment.

Description

A kind of minisize plasma of the high-frequency vibration that is coupled strengthens chemical vapor deposition unit
Technical field
The present invention relates to chemical vapour deposition technique field, the minisize plasma that is specifically related to a kind of high-frequency vibration that is coupled strengthens chemical vapor deposition unit.
Background technology
Plasma reinforced chemical vapour deposition method is to make by microwave or radio frequency etc. the ionization of gas that contains film composed atom, in part, form plasma body, plasma chemistry activity is very strong, be easy to occur chemical reaction, on substrate, deposit desired film, have that depositing temperature is low, sedimentation rate is fast.But because larger unrelieved stress is contained in the film inside of its deposition, film is directly cracked in deposition process, cannot deposit the film that is satisfied with thickness.
Plasma reinforced chemical vapour deposition apparatus price is comparatively expensive at present, its internal structure fixedly compactness can not be carried out the repacking of some necessity, the adjustable parameter of deposit film is less, adjustable extent is large, because deposition parameter interval is greatly often difficult to find out optimal deposition point, utilize change deposition parameter to deposit superior in quality film often more difficult, and equipment is huge, price is high, because experiment is less with equipment institute deposit film area, large cavity causes the waste of deposit film material requested, and realize vacuum deposition environment and need the overspending pumpdown time.
Summary of the invention
Solve the problems of the technologies described above, the minisize plasma that the invention provides a kind of high-frequency vibration that is coupled strengthens chemical vapor deposition unit, adopt high-frequency vibration to eliminate in deposition process institute's deposit film unrelieved stress, radio-frequency power supply RF watt level, jet tray position and collect sheet spacing, collect sheet temperature, collect the parameters such as sheet vibrational frequency and make to collect and on sheet, deposit superior in quality film while regulating deposition.This equipment has in range ability to be adjusted deposition parameter arbitrarily, adopts high-frequency vibration to eliminate film residual stress simultaneously, and device structure is simple, good economy performance, is applicable to research deposition parameter and film quality relation.
In order to achieve the above object, the technical solution adopted in the present invention is, a kind of minisize plasma of the high-frequency vibration that is coupled strengthens chemical vapor deposition unit, comprise airing system, exhaust system, vacuum reaction chamber, support, jet system, vibrator, deposition table and electric control gear, it is indoor that described support is fixedly installed on vacuum reaction, described vibrator is arranged on frame bottom, described deposition table is positioned on support, described vibrator take-off lever is fixedly connected with deposition table, for generation of high-frequency vibration transmission ofenergy to deposition table, described jet system is arranged on deposition table top, and described jet system can move up and down by relatively described support by lifting table, the nozzle of described jet system is with respect to described deposition table, described airing system is respectively vacuum reaction chamber and jet system provides rare gas element and reactant gases, described exhaust system communicates with vacuum reaction chamber, be used to vacuum reaction chamber to vacuumize, described vibrator, airing system and exhaust system are all electrically connected with electric control gear, described electric control gear also comprises radio-frequency power supply RF, described jet system is connected with negative pole with the positive pole of radio-frequency power supply RF respectively with deposition table.
Further, described vacuum reaction chamber is formed by chamber wall, upper cover and lower cover sealing, described chamber wall is cylindrical chamber wall, described upper cover and lower cover are located at respectively the top and bottom of cylindrical chamber wall, and upper cover and lower cover are all tightly connected with cylindrical chamber wall, on the outer wall of described cylindrical chamber wall, offer quartz window, see through this quartz window and can observe chamber pars intramuralis.
Further, described airing system comprises gas generating unit, the first inlet pipe, inert gas valve, the second inlet pipe and reactant gases valve, described inert gas valve is arranged on the first inlet pipe stage casing, described first inlet pipe one end is communicated with gas generating unit, the first inlet pipe the other end is communicated with vacuum reaction is indoor through described upper cover, described reactant gases valve is arranged on the second inlet pipe stage casing, described second inlet pipe one end is communicated with gas generating unit, the described second inlet pipe the other end is communicated with jet system, for jet system provides reactant gases.
Further, described jet system comprises union lever, Jiong type link span and jet plate, described jet plate comprises web plate, middle plate and jet tray, described union lever top through upper cover and relatively this upper cover move up and down, described union lever bottom is fixed with Jiong type link span welded top, described Jiong type link span two foot bottoms and described web plate welded top are fixed, described web plate bottom surface surrounding is connected with middle plate top surface surrounding by insulation layer, described middle plate bottom surface surrounding is connected with jet tray end face surrounding by insulation layer, space between described web plate and middle plate is epicoele, space between described middle plate and jet tray is cavity of resorption, described web plate is provided with inlet mouth, this inlet mouth is communicated with the first inlet pipe, on described middle plate, be evenly provided with airflow hole, on described jet tray, be evenly provided with jet-impingement hole, described jet tray is connected with the positive pole of radio-frequency power supply RF.The reactant gases that epicoele is sent here inlet mouth distributes in advance, after pre-distribution, gas enters cavity of resorption through airflow hole, further reactant gases is distributed, reactant gases evenly sprays to deposition table through jet-impingement hole, adopts insulation layer to make to connect jet tray and the insulation of other position of radio-frequency power supply RF positive electrode.
Further, described lifting table comprises lower connecting plate, upper junction plate, slide block, slide rail, screw mandrel, the second union lever and roller, described slide rail is two slide rails arranged side by side, described upper junction plate and lower connecting plate are connected to the two ends up and down of two slide rails arranged side by side, described lower connecting plate is fixedly connected with the upper surface of upper cover, described slide block and two slide rails arranged side by side are slidably matched, described upper end of slide block is connected with screw mandrel, screw mandrel upper end passes described upper junction plate centre hole, and described screw mandrel is connected with upper junction plate thread fit, described slide block lower end is connected with union lever, described lower connecting rod lower end passes described lower connecting plate centre hole, described upper cover also offers the through hole passing for the second union lever, described the second union lever lower end is fixedly connected with union lever, described screw mandrel top connects the central rotating shaft of roller, by the rotation of roller, driven the rotation of screw mandrel, and then promotion slide block slides along track, and the union lever being connected under slide block correspondingly moves up and down.
Further, described deposition table comprises support board and U-shaped hot plate, described support board is arranged on U-shaped hot plate, this support board bottom surface and U-shaped hot plate internal surface surround a venting cavity, the bottom surface of the U-shaped hot plate in described venting cavity is evenly provided with a plurality of heating pieces, on support board in described venting cavity, be evenly provided with a plurality of thermal sensors, the bottom surface of described U-shaped hot plate also offers a plurality of ventilating pits, on described support board, be also provided with collection sheet, described U-shaped hot plate outer bottom middle part is connected with a support bar, described support bar is fixedly connected with described vibrator take-off lever, vibrator produces high-frequency vibration energy and passes to deposition table by take-off lever and support bar.Heating piece is arranged on to the internal surface of the U-shaped bottom land of the U-shaped hot plate in venting cavity, make the temperature distortion of heating piece not affect the shape of support board, the U-shaped bottom land of U-shaped hot plate runs through and offers a plurality of ventilating pits, avoid the venting cavity volume variable effect support board shape of being heated, while being heated, venting cavity carries out gaseous interchange by ventilating pit and vacuum reaction chamber, thermal sensor is attached at support board lower surface and measures in real time support board temperature and send parameter to electric control gear, collect sheet and be placed in support board upper surface, under compact heap snap-in force, be close to support board, prevent from collecting sheet shift in position in deposition table vibration processes.
Further, described collection sheet surrounding is pressed on support board by L-type compact heap.
Further, described U-shaped hot plate and support board are circle.
Further, described support comprises base, retaining plate, the first anchor, the first round slider, the first thermal insulation layer, the second anchor, the second round slider and the second thermal insulation layer, described base is arranged on down and covers, described retaining plate is arranged on base, described vibrator is fixedly installed on retaining plate, described the first anchor bottom is fixedly connected with retaining plate, described the first anchor top is connected with the first round slider, described the first thermal insulation layer be arranged on the first round slider, described the second anchor bottom is fixedly connected with the first thermal insulation layer, described the second anchor top is fixedly connected with the second thermal insulation layer, described the second round slider is arranged on the second thermal insulation layer.
Further, between retaining plate and base, also by two vibroshocks, connect, play damping effect.
Further, on described base axis, embed a cylindricality filter screen.
Further, described exhaust system comprises output tube, vent valve and air extractor, and described output tube one end is connected with lower cover, and the other end is communicated with air extractor, described vent valve is arranged on output tube, and described output tube passes this lower cover and is fixedly connected with cylindricality filter screen.
The present invention is by adopting technique scheme, and compared with prior art, tool has the following advantages:
The present invention adopts exhaust system to vacuumize vacuum chamber, between the support board that connects the jet tray of radio-frequency power supply RF positive pole, connection negative pole, form rf electric field, airing system provides rare gas element and reactant gases, reactant gases glow discharge under rf electric field effect of jet system ejection produces a large amount of electronics, through series of chemical, at collection sheet surface deposition, go out film, regulate heating piece heating power, vibrator vibrational frequency, radio-frequency power supply RF power, jet tray and support board spacing, by adjusting parameter, deposit more high quality film.The present invention has in range ability and arbitrarily deposition parameter is adjusted, and adopts high-frequency vibration to eliminate film residual stress simultaneously, and device structure is simple, good economy performance, is applicable to research deposition parameter and film quality relation.
Accompanying drawing explanation
Fig. 1 is the sectional view of embodiments of the invention.
Fig. 2 is the sectional view of embodiments of the invention lifting table A.
Fig. 3 is embodiments of the invention jet system sectional view.
Fig. 4 is embodiments of the invention deposition table sectional view.
Fig. 5 is the vertical view of embodiments of the invention anchor 32.
Fig. 6 is the side-view of embodiments of the invention anchor 32.
[nomenclature]
1, gas generating unit, 2, inert gas valve, 3, reactant gases valve, 4, the second inlet pipe, 5, the first inlet pipe, 6, union lever, 105, lower connecting plate, 101, roller, 107, leading screw, 106, union lever, 102, upper junction plate, 103, slide block, 104, slide rail, 7, the first reserved pipeline, 8, pressure warning unit, 9, upper cover, 10, link span, 11, chamber wall, 12, porthole, 13, quartz window, 14, take-off lever, 15, vibrator, 16, vibroshock, 17, lower cover, 18, circuit, 19, indicating meter, 20, vent valve, 21, output tube, 22, air extractor, 23, the second reserved pipeline, 24, cylindricality filter screen, 25, base, 26, retaining plate, 27, the first anchor, 28, the first round slider, 29, the first thermal insulation layer, 30, deposition table, 31, jet plate, 32, the second anchor, 33, the second thermal insulation layer, 34, the second round slider, 35, vacuum reaction chamber, 201, inlet mouth, 202, web plate, 203, insulation layer, 204, middle plate, 205, insulation layer, 206, jet tray, 207, jet-impingement hole, 208, cavity of resorption, 209, airflow hole a, 210, epicoele, 301, collect sheet, 302, compact heap, 303, support board, 304, venting cavity, 305, hot plate, 306, support bar, 307, heating piece, 308, ventilating pit, 309, thermal sensor, A, lifting table.
Embodiment
Now the present invention is further described with embodiment by reference to the accompanying drawings.
As a specific embodiment, as shown in Figures 1 to 6, the minisize plasma of a kind of high-frequency vibration that is coupled of the present invention strengthens chemical vapor deposition unit, comprise airing system, exhaust system, vacuum reaction chamber, support, jet system, vibrator, deposition table 30 and electric control gear 19, described vacuum reaction chamber 35 is by chamber wall 11, upper cover 9 and lower cover 17 sealings form, described chamber wall 11 is cylindrical chamber wall 11, while adopting cylindrical chamber wall 11 its inner vacuum, the stressed of its chamber wall is uniform, described upper cover 9 and lower cover 17 are located at respectively the top and bottom of cylindrical chamber wall 11, and upper cover 9 and lower cover 17 are all tightly connected with cylindrical chamber wall 11, on the outer wall of described cylindrical chamber wall 11, offer quartz window 13, see through this quartz window 13 and can observe chamber wall 11 inside, described quartz window 13 can be offered a plurality of openings in cylindrical chamber wall 11 sides, then on opening, cover and establish a silica glass.
Described support is fixedly installed in vacuum reaction chamber 35, described support comprises base 25, retaining plate 26, the first anchor 27, the first round slider 28, the first thermal insulation layer 29, the second anchor 32, the second round slider 34 and the second thermal insulation layer 33, described base 25 is arranged on lower cover 17, this base 25 is cup dolly 25, described base 25 bottoms are tightly sticked at lower cover 17 upper surfaces, described base 25 axis are offered a centre hole, and centre hole is embedded in a cylindricality filter screen 24.
Described retaining plate 26 is circular retaining plate 26, and circular retaining plate 26 is stressed to be evenly arranged on base 25, between retaining plate 26 and base 25, also by two vibroshocks 16, connects, and the vibration that vibroshock 16 produces vibrator 16 decays, and plays damping effect.Described the first anchor 27 is round shape anchor 27, in order to realize the observation to the response situation in the first anchor 27, in described anchor 27 sides, with respect to the position of quartz window 13, offer porthole 12, see through quartz window 13 and porthole 12 and can observe the response situation in deposition table.
Its first anchor 27 bottoms and retaining plate 26 circumference match, and be fixedly connected by bolt, nut, described the first anchor 27 tops are connected with the first round slider 28, described the first thermal insulation layer 29 be arranged on the first round slider 28, described the second anchor 32 bottoms are fixedly connected with the first thermal insulation layer 29, described the second anchor 32 tops are fixedly connected with the second thermal insulation layer 33, and described the second round slider 34 is arranged on the second thermal insulation layer 33.
Described vibrator 15 is fixedly installed on retaining plate 26, described vibrator 15 is arranged on frame bottom, described deposition table 30 is positioned on support, described vibrator 15 take-off levers 14 are fixedly connected with deposition table 30, for generation of high-frequency vibration transmission ofenergy to deposition table 30, described jet system is arranged on deposition table 30 tops, and described jet system can move up and down by relatively described support by lifting table A, the nozzle of described jet system is with respect to described deposition table 30, described airing system is respectively vacuum reaction chamber 35 and jet system provides rare gas element and reactant gases, described exhaust system communicates with vacuum reaction chamber 35, be used to vacuum reaction chamber 35 to vacuumize, described vibrator 15, airing system and exhaust system are all electrically connected with electric control gear, described electric control gear 19 also comprises radio-frequency power supply RF, described jet system is connected with negative pole with the positive pole of radio-frequency power supply RF respectively with deposition table 30.
Described airing system comprises gas generating unit 1, the first inlet pipe 5, inert gas valve 2, the second inlet pipe 4 and reactant gases valve 3, described inert gas valve 2 is arranged on the first inlet pipe 5 stage casings, described first inlet pipe 5 one end are communicated with gas generating unit, first inlet pipe 5 the other ends are communicated with vacuum reaction chamber 35 is interior through described upper cover 9, described reactant gases valve 3 is arranged on the second inlet pipe 4 stage casings, described second inlet pipe 4 one end are communicated with gas generating unit, described second inlet pipe 4 the other ends are communicated with jet system, for jet system provides reactant gases.
Described exhaust system comprises output tube 21, vent valve 20 and air extractor 22, described output tube 21 one end are connected with lower cover 17, the other end is communicated with air extractor 22, and described vent valve 20 is arranged on output tube 21, and described output tube 21 passes this lower cover 17 and is fixedly connected with cylindricality filter screen 24.
Described jet system comprises union lever 6, Jiong type link span 10 and jet plate 31, described jet plate 31 comprises web plate 202, middle plate 204 and jet tray 206, described union lever 6 tops are passed upper cover 9 and are connected with lifting table A, described union lever 6 under the effect of lifting table A relatively this upper cover 9 move up and down, specifically with reference to shown in figure 2, described lifting table A comprises lower connecting plate 105, upper junction plate 102, slide block 103, slide rail 104, screw mandrel 107, union lever 106 and roller 101, described slide rail 104 is two slide rails arranged side by side 104, described upper junction plate 102 and lower connecting plate 105 are connected to the two ends up and down of two slide rails arranged side by side 104, described lower connecting plate 105 is fixedly connected with the upper surface of upper cover 9, described slide block 103 and two slide rails 104 arranged side by side are slidably matched, described slide block 103 upper ends are connected with screw mandrel 107, screw mandrel 107 upper ends pass described upper junction plate 102 centre holes, and described screw mandrel 107 is connected with upper junction plate 102 thread fit, described slide block 103 lower ends are connected with union lever 106, described lower connecting rod 106 lower ends pass described lower connecting plate 105 centre holes, described upper cover also offers the through hole passing for union lever 106, described union lever 106 lower ends are fixedly connected with union lever 6, described screw mandrel 107 tops connect the central rotating shaft of roller 101, by the rotation of roller 101, driven the rotation of screw mandrel 107, and then promote slide block 103 along track 104 slips, and the union lever 106 being connected under slide block 103 correspondingly moves up and down, described union lever 6 bottoms and Jiong type link span 10 welded top are fixed, 10 liang of foot bottoms of described Jiong type link span and described web plate 202 welded top are fixed, described web plate 202 bottom surface surroundings are connected with middle plate 204 end face surroundings by insulation layer 203, described middle plate 204 bottom surface surroundings are connected with jet tray 206 end face surroundings by insulation layer 205, space between described web plate 202 and middle plate 204 is epicoele 210, space between described middle plate 204 and jet tray 206 is cavity of resorption 208, described web plate 202 is provided with inlet mouth 201, this inlet mouth 201 is communicated with the first inlet pipe 5, pressure warning unit 8 measuring junctions communicate with vacuum reaction chamber 35, on described middle plate 204, be evenly provided with airflow hole 209, on described jet tray 206, be evenly provided with jet-impingement hole 207, described jet tray 206 is connected with the positive pole of radio-frequency power supply RF.The reactant gases that 210 pairs of inlet mouths 201 of epicoele are sent here distributes in advance, after pre-distribution, gas enters cavity of resorption 208 through airflow hole 209, further reactant gases is distributed, reactant gases evenly sprays to deposition table 30 through jet-impingement hole 207, adopts insulation layer to make to connect the jet tray 206 and other position insulation of radio-frequency power supply RF positive electrode.
In the present embodiment, described deposition table 30 comprises support board 303 and U-shaped hot plate 305, and described U-shaped hot plate 305 and support board 303 are circle.Described support board 303 is arranged on U-shaped hot plate 305, and support board 303 is all well connected radio-frequency power supply RF negative pole with U-shaped hot plate 305, these support board 303 bottom surfaces and U-shaped hot plate 305 internal surfaces surround a venting cavity 304, the bottom surface of the U-shaped hot plate 305 in described venting cavity 304 is evenly provided with a plurality of heating pieces 307, on support board 303 in described venting cavity 304, be evenly provided with a plurality of thermal sensors 309, the bottom surface of described U-shaped hot plate 305 also offers a plurality of ventilating pits 308, the U-shaped bottom land of U-shaped hot plate 305 runs through and offers a plurality of ventilating pits 308 specifically, avoid venting cavity 304 volume variable effect support board 303 shapes of being heated, while being heated, venting cavity 304 carries out gaseous interchange by ventilating pit 308 and vacuum reaction chamber 35.On described support board 303, be also provided with and collect sheet 301, described U-shaped hot plate 305 outer bottom middle parts are connected with a support bar 306, described support bar 306 is fixedly connected with described vibrator 15 take-off levers 14, the first round slider 28, the second round slider 34 guarantee respectively support bar 306, the rectilinearity of link span 10 in moving process, corresponding up and down to guarantee deposition table 30 and jet plate 31 positions.
Heating piece 307 is arranged on to the internal surface of the U-shaped bottom land of the U-shaped hot plate 305 in venting cavity 304, make the temperature distortion of heating piece 307 not affect the shape of support board 303, thermal sensor 309 is attached at support board 303 lower surfaces and measures in real time support board 303 temperature and send parameter to electric control gear 19, collect sheet 301 and be placed in support board 303 upper surfaces, described collection sheet 301 surroundings are pressed on support board 303 by L-type compact heap 302, under compact heap 302 snap-in forces, be close to support board 303, prevent from collecting sheet 301 shift in position in deposition table 30 vibration processes.Described electric control gear 19 comprises a housing, and be arranged on indicating meter and the control panel on housing, radio-frequency power supply RF and pilot circuit are all arranged on enclosure interior, and described indicating meter, control panel, thermal sensor 309, heating piece 307, air extractor 22, vibrator 15 are all electrically connected with this pilot circuit.Vibrator 15 produces high-frequency vibration energy and passes to deposition table 30 by take-off lever 14 and support bar 306.The high-frequency vibration that vibrator 15 produces is passed to the collection sheet 301 of being close to support board 303 through take-off lever 14, support bar 306, make to collect when sheet 301 is collected film to produce high-frequency vibration, and vibrational energy is passed to deposit film; The anodal jet tray 206 that connects of radio-frequency power supply RF, negative pole connects support board 303, during work, between jet tray 206, Stage microscope 303, forms rf electric field; Rf electric field makes the reactant gases generation glow discharge of jet tray 206 jet-impingement hole 207 ejections, produces a large amount of electronics, the collection sheet 301 surface deposition films through series of chemical at high-frequency vibration in glow discharge region; The roller 101 of turn lifting table A, move along slide rail 104 with the leading screw 107 rotation band movable sliders 103 of web plate 102 thread fit, the union lever 6, link span 10, the jet system that are fixedly connected with slide block 103 are moved up and down, to distance adjustment between jet system, deposition table 30; The heat that the second thermal insulation layer 33,29 pairs of heating pieces of the first thermal insulation layer 307 produce insulate, prevented the stopping property that heat affecting upper cover 9, lower cover 17 are connected with chamber wall 11, and vibrator 15 serviceabilitys are exerted an influence, cylindricality filter screen 24 is placed in output tube 21 ports so that solid particulate in the residual gas of discharging is filtered; Regulate heating piece 307 heating powers to change to collect sheets 301 and collect temperature, support board 303 temperature parameters measured by thermal sensor 309 and the indicating meter by electric control gear 19 shows.
In order better the present invention to be carried out to later stage expansion, the present embodiment is also provided with first reserved pipeline the 7, second reserved pipeline 23, is equipped with valve on it.
Principle of work of the present invention is: while doing, first vacuum chamber 35 is vacuumized, close mixed gas valve 3, the first reserved pipeline 7, the second reserved pipeline 23 valves, open inert gas valve 2, vent valve 20, exhaust system 22 is filled 10 minutes vacuum chamber 35 use rare gas elementes the residual gas discharge in vacuum chamber 35 simultaneously, closes inert gas valve 2, and vacuum chamber 35 vacuum tightnesss are observed by pressure warning unit 8, when reaching requirement vacuum values, and vibrator 15 excitings, heating piece 307 heating, treat that vibrator 15 reaches required excited frequency, it is temperature required that collection sheet 301 reaches reaction, opens 3 pairs of vacuum chambers 35 of mixed gas valve and fill reactant gases, and reactant gases is through jet system 31 inlet mouths 201, epicoele 210, airflow hole a 209, cavity of resorption 208, airflow hole b 207 evenly sprays, and opens radio-frequency power supply RF swing roller 101 and regulates jet tray 206 positions, and evenly reactant gases glow discharge under rf electric field effect of ejection produces a large amount of electronics, through series of chemical at high temperature, collection sheet 301 surface depositions of vibration go out film, see through quartz window 13, the interior response situation of 12 pairs of vacuum chambers 35 of porthole is observed, and regulates radio-frequency power supply RF watt level, jet tray 206 positions, heating piece 307 heating powers, the parameters such as vibrator 15 excited frequencies make to collect on sheet 301 and deposit the better film of quality, after having deposited, close vibrator 15 power supplys, close radio-frequency power supply RF, close mixed gas valve 3, open inert gas valve 2, the interior residual reaction gas of vacuum chamber 35 solid particulate after cylindricality filter screen 24 is left in cylindricality filter screen 24, gas is discharged from, until vacuum chamber internal pressure while reaching consistent with ambient pressure, is closed exhaust system 22, to be heated 307 is cooled to room temperature, opens upper cover and takes out and collect sheet 301, obtains deposit films collecting sheet 301 surfaces.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but those skilled in the art should be understood that; within not departing from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.

Claims (10)

1. the minisize plasma of the high-frequency vibration that is coupled strengthens chemical vapor deposition unit, it is characterized in that: comprise airing system, exhaust system, vacuum reaction chamber, support, jet system, vibrator, deposition table and electric control gear, it is indoor that described support is fixedly installed on vacuum reaction, described vibrator is arranged on frame bottom, described deposition table is positioned on support, described vibrator take-off lever is fixedly connected with deposition table, for generation of high-frequency vibration transmission ofenergy to deposition table, described jet system is arranged on deposition table top, and described jet system can move up and down by relatively described support by lifting table, the nozzle of described jet system is with respect to described deposition table, described airing system is respectively vacuum reaction chamber and jet system provides rare gas element and reactant gases, described exhaust system communicates with vacuum reaction chamber, be used to vacuum reaction chamber to vacuumize, described vibrator, airing system and exhaust system are all electrically connected with electric control gear, described electric control gear also comprises radio-frequency power supply RF, described jet system is connected with negative pole with the positive pole of radio-frequency power supply RF respectively with deposition table.
2. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 1 strengthens chemical vapor deposition unit, it is characterized in that: described vacuum reaction chamber is formed by chamber wall, upper cover and lower cover sealing, described chamber wall is cylindrical chamber wall, described upper cover and lower cover are located at respectively the top and bottom of cylindrical chamber wall, and upper cover and lower cover are all tightly connected with cylindrical chamber wall, on the outer wall of described cylindrical chamber wall, offer quartz window, see through this quartz window and can observe chamber pars intramuralis.
3. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 1 strengthens chemical vapor deposition unit, it is characterized in that: described airing system comprises gas generating unit, the first inlet pipe, inert gas valve, the second inlet pipe and reactant gases valve, described inert gas valve is arranged on the first inlet pipe stage casing, described first inlet pipe one end is communicated with gas generating unit, the first inlet pipe the other end is communicated with vacuum reaction is indoor through described upper cover, described reactant gases valve is arranged on the second inlet pipe stage casing, described second inlet pipe one end is communicated with gas generating unit, the described second inlet pipe the other end is communicated with jet system, for jet system provides reactant gases.
4. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 3 strengthens chemical vapor deposition unit, it is characterized in that: described jet system comprises union lever, Jiong type link span and jet plate, described jet plate comprises web plate, middle plate and jet tray, described union lever top through upper cover and relatively this upper cover move up and down, described union lever bottom is fixed with Jiong type link span welded top, described Jiong type link span two foot bottoms and described web plate welded top are fixed, described web plate bottom surface surrounding is connected with middle plate top surface surrounding by insulation layer, described middle plate bottom surface surrounding is connected with jet tray end face surrounding by insulation layer, space between described web plate and middle plate is epicoele, space between described middle plate and jet tray is cavity of resorption, described web plate is provided with inlet mouth, this inlet mouth is communicated with the first inlet pipe, on described middle plate, be evenly provided with airflow hole, on described jet tray, be evenly provided with jet-impingement hole, described jet tray is connected with the positive pole of radio-frequency power supply RF.
5. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 4 strengthens chemical vapor deposition unit, it is characterized in that: described lifting table comprises lower connecting plate, upper junction plate, slide block, slide rail, screw mandrel, the second union lever and roller, described slide rail is two slide rails arranged side by side, described upper junction plate and lower connecting plate are connected to the two ends up and down of two slide rails arranged side by side, described lower connecting plate is fixedly connected with the upper surface of upper cover, described slide block and two slide rails arranged side by side are slidably matched, described upper end of slide block is connected with screw mandrel, screw mandrel upper end passes described upper junction plate centre hole, and described screw mandrel is connected with upper junction plate thread fit, described slide block lower end is connected with union lever, described lower connecting rod lower end passes described lower connecting plate centre hole, described upper cover also offers the through hole passing for the second union lever, described the second union lever lower end is fixedly connected with union lever, described screw mandrel top connects the central rotating shaft of roller, by the rotation of roller, driven the rotation of screw mandrel, and then promotion slide block slides along track, and the union lever being connected under slide block correspondingly moves up and down.
6. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 1 strengthens chemical vapor deposition unit, it is characterized in that: described deposition table comprises support board and U-shaped hot plate, described support board is arranged on U-shaped hot plate, this support board bottom surface and U-shaped hot plate internal surface surround a venting cavity, the bottom surface of the U-shaped hot plate in described venting cavity is evenly provided with a plurality of heating pieces, on support board in described venting cavity, be evenly provided with a plurality of thermal sensors, the bottom surface of described U-shaped hot plate also offers a plurality of ventilating pits, on described support board, be also provided with collection sheet, described U-shaped hot plate outer bottom middle part is connected with a support bar, described support bar is fixedly connected with described vibrator take-off lever, vibrator produces high-frequency vibration energy and passes to deposition table by take-off lever and support bar.
7. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 1 strengthens chemical vapor deposition unit, it is characterized in that: described support comprises base, retaining plate, the first anchor, the first round slider, the first thermal insulation layer, the second anchor, the second round slider and the second thermal insulation layer, described base is arranged on down and covers, described retaining plate is arranged on base, described vibrator is fixedly installed on retaining plate, described the first anchor bottom is fixedly connected with retaining plate, described the first anchor top is connected with the first round slider, described the first thermal insulation layer be arranged on the first round slider, described the second anchor bottom is fixedly connected with the first thermal insulation layer, described the second anchor top is fixedly connected with the second thermal insulation layer, described the second round slider is arranged on the second thermal insulation layer.
8. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 7 strengthens chemical vapor deposition unit, it is characterized in that: between retaining plate and base, also by two vibroshocks, connect, play damping effect.
9. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 7 strengthens chemical vapor deposition unit, it is characterized in that: on described base axis, embed a cylindricality filter screen.
10. the minisize plasma of a kind of high-frequency vibration that is coupled according to claim 9 strengthens chemical vapor deposition unit, it is characterized in that: described exhaust system comprises output tube, vent valve and air extractor, described output tube one end is connected with lower cover, the other end is communicated with air extractor, described vent valve is arranged on output tube, and described output tube passes this lower cover and is fixedly connected with cylindricality filter screen.
CN201410449665.0A 2014-09-05 2014-09-05 High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device Pending CN104195528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410449665.0A CN104195528A (en) 2014-09-05 2014-09-05 High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410449665.0A CN104195528A (en) 2014-09-05 2014-09-05 High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device

Publications (1)

Publication Number Publication Date
CN104195528A true CN104195528A (en) 2014-12-10

Family

ID=52080889

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410449665.0A Pending CN104195528A (en) 2014-09-05 2014-09-05 High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device

Country Status (1)

Country Link
CN (1) CN104195528A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104947049A (en) * 2015-05-14 2015-09-30 宁波时代全芯科技有限公司 Coating device
CN106245005A (en) * 2016-09-20 2016-12-21 武汉华星光电技术有限公司 Plasma enhanced chemical vapor deposition unit
CN106756884A (en) * 2016-12-13 2017-05-31 温州海旭科技有限公司 A kind of PECVD coating apparatus
CN113151809A (en) * 2021-04-01 2021-07-23 上海征世科技股份有限公司 Microwave plasma processing device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924893B1 (en) * 1998-05-14 1999-07-26 日本電気株式会社 Semiconductor manufacturing equipment
CN101333651A (en) * 2007-06-22 2008-12-31 应用材料股份有限公司 Diffuser support
CN101366099A (en) * 2006-06-16 2009-02-11 东京毅力科创株式会社 Placement table construction, and heat treatment equipment
CN101903980A (en) * 2008-03-21 2010-12-01 东京毅力科创株式会社 Stage structure and heat treatment apparatus
CN102403182A (en) * 2010-09-16 2012-04-04 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
CN102906861A (en) * 2010-05-28 2013-01-30 泰拉半导体株式会社 Large-area deposition device for gas-mixing prevention
CN103263357A (en) * 2013-05-21 2013-08-28 上海大学 Device and method for preparing magnetic drug particles
CN103789750A (en) * 2014-02-20 2014-05-14 厦门大学 Plasma enhanced chemical vapor deposition device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2924893B1 (en) * 1998-05-14 1999-07-26 日本電気株式会社 Semiconductor manufacturing equipment
CN101366099A (en) * 2006-06-16 2009-02-11 东京毅力科创株式会社 Placement table construction, and heat treatment equipment
CN101333651A (en) * 2007-06-22 2008-12-31 应用材料股份有限公司 Diffuser support
CN101903980A (en) * 2008-03-21 2010-12-01 东京毅力科创株式会社 Stage structure and heat treatment apparatus
CN102906861A (en) * 2010-05-28 2013-01-30 泰拉半导体株式会社 Large-area deposition device for gas-mixing prevention
CN102403182A (en) * 2010-09-16 2012-04-04 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
CN103263357A (en) * 2013-05-21 2013-08-28 上海大学 Device and method for preparing magnetic drug particles
CN103789750A (en) * 2014-02-20 2014-05-14 厦门大学 Plasma enhanced chemical vapor deposition device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104947049A (en) * 2015-05-14 2015-09-30 宁波时代全芯科技有限公司 Coating device
CN106245005A (en) * 2016-09-20 2016-12-21 武汉华星光电技术有限公司 Plasma enhanced chemical vapor deposition unit
CN106756884A (en) * 2016-12-13 2017-05-31 温州海旭科技有限公司 A kind of PECVD coating apparatus
CN106756884B (en) * 2016-12-13 2018-10-23 温州海旭科技有限公司 A kind of PECVD coating apparatus
CN113151809A (en) * 2021-04-01 2021-07-23 上海征世科技股份有限公司 Microwave plasma processing device

Similar Documents

Publication Publication Date Title
CN104195528A (en) High-frequency vibration coupled micro plasma-enhanced chemical vapor deposition device
CN100519835C (en) Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell
CN109487216A (en) Source application and OLED evaporator
CN103941166B (en) High-temperature gas breakdown characteristics detecting device and method under a kind of VFTO
CN103789748A (en) Process chamber air distribution adjustment-oriented chemical vapor deposition (CVD) equipment spray header
CN102019661A (en) Film making box
CN103789750B (en) Plasma reinforced chemical vapour deposition apparatus
CN101333452B (en) Intermittent open type crude oil cracking device
CN107099782A (en) A kind of chemical vapor deposition unit for preparing the thin-film materials such as graphene, hexagonal boron nitride
CN208545490U (en) A kind of resonant cavity for chemistry for gas phase depositing diamond film
CN102534551A (en) Semiconductor equipment
CN105018884B (en) Instrument is deposited in a kind of small size vacuum
CN201756583U (en) Large size diamond like carbon (DLC) film depositing apparatus at low temperatures
CN203653691U (en) Microwave plasma chemical vapor deposition device
CN114251927B (en) Water-electricity mixed rapid high-vacuum oven and working method thereof
TWI527761B (en) Preparation device and method using the preparation device for preparing nano-titanium dioxide
CN210560694U (en) PVD coating device
CN105714274A (en) Plasma enhanced chemical vapor deposition equipment and film manufacturing method
CN206832605U (en) A kind of single cabin formula dried in place high and low temperature impact test system
CN106929825B (en) A kind of device and method being quickly cooled down depositing homogeneous metal oxide film
CN102944493B (en) Device and method for detecting charged pollutants in vacuum
US10684126B2 (en) Apparatus and method for layer thickness measurement for a vapor deposition method
CN202204710U (en) Volatile organic compound (VOC) sampling device
KR102631590B1 (en) Acetylene black manufacturing system for electrode catalyst support for hydrogen fuel cells
CN213422406U (en) Calibrating device of acoustic instrument

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information

Inventor after: Zheng Jianyi

Inventor after: Lin Shujia

Inventor after: Yang Qunfeng

Inventor after: Chen Mingkun

Inventor after: Zheng Gaofeng

Inventor before: Zheng Jianyi

Inventor before: Yang Qunfeng

Inventor before: Zhuang Mingfeng

Inventor before: Zheng Gaofeng

Inventor before: Chen Xinmin

COR Change of bibliographic data
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20141210

WD01 Invention patent application deemed withdrawn after publication