CN105714274A - Plasma enhanced chemical vapor deposition equipment and film manufacturing method - Google Patents
Plasma enhanced chemical vapor deposition equipment and film manufacturing method Download PDFInfo
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- CN105714274A CN105714274A CN201610202910.7A CN201610202910A CN105714274A CN 105714274 A CN105714274 A CN 105714274A CN 201610202910 A CN201610202910 A CN 201610202910A CN 105714274 A CN105714274 A CN 105714274A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses plasma enhanced chemical vapor deposition equipment and a film manufacturing method. The equipment comprises a reaction cavity; an upper polar plate and a lower polar plate are arranged in the reaction cavity; the lower polar plate includes a deposition plate and a groove type mechanism; and the deposition plate covers a groove type opening of the groove type mechanism to form an accommodating space. The outer surface of the groove type mechanism is covered with a layer of insulation wall formed by an insulation material, and the deposition plate is only retained to introduce radio-frequency voltage to generate plasma for coating, so that the uniformity and the stability of the plasma can be guaranteed, the film material is uniformly deposited on a substrate, and the film manufacturing quality can be improved.
Description
Technical field
The application relates to coating technique field, particularly relates to a kind of plasma enhanced chemical vapor deposition equipment and film-forming method.
Background technology
Diamond like carbon film (DiamondLikeCarbon) is called for short DLC film.It is that a class character is similar to diamond thin, has high rigidity, high resistivity, favorable optical performance, chemical inertness etc., has again the amorphous carbon film of self unique tribological property simultaneously.Can be widely used for the fields such as machinery, electronics, optics, calorifics, acoustics, medical science, have a good application prospect.
Plasma enhanced chemical vapor deposition (PECVD) is a kind of method going to commonly use preparing diamond like carbon film.Plasma enhanced chemical vapor deposition technology, between top crown and lower step, uniform plasma is produced by gas glow discharge, it seems that from macroscopically, this plasma temperature is not high, but it is in the state being stimulated inside it, its electron energy is enough to make molecular scission, and cause that there are chemically active material (anakmetomeres, atom, ion, atomic group etc.) produce, make the chemical reaction originally needing at high temperature just to carry out, just can occur even at normal temperatures at a lower temperature, thus reaching also to be formed on substrate at low temperatures the purpose of solid film.Detailed process is pass into appropriate reacting gas, under the induction of radio-frequency power supply and DC negative bias voltage, makes gaseous plasma.Likely there is further reaction with the surface of solids contacted in some neutral products in plasma, discharges, while forming thin film, the product made new advances in plasma.New product is the motion of Formation rule under the control of electric field, is eventually deposited on substrate and forms solid film.
And owing to having passed into radio-frequency voltage at lower step, therefore descend each near surface of step all can produce plasma, the plasmon skewness in the device space can be caused, thus the quality of thin film can be produced to affect, restrict film forming area.
Summary of the invention
Invention provides a kind of plasma enhanced chemical vapor deposition equipment and film-forming method, to solve in the technique of depositing diamond-like thin film, the problem of the coating quality difference caused owing to the plasma distribution of device interior is uneven.
For solving above-mentioned technical problem, the invention provides a kind of plasma enhanced chemical vapor deposition equipment, including:
Reaction cavity, is internally provided with top crown and lower step；Described top crown and described lower step are correspondingly arranged；
Described lower step includes deposition plate and grooved mechanism, and described deposition plate is covered on the slot-type openings of described grooved mechanism, forms an accommodation space, and wherein, the outer surface of described grooved mechanism is coated with the insulation wall formed by insulant.
Preferably, in described accommodation space, it is provided with water-cooling groove, is used for passing into coolant and described deposition plate is lowered the temperature.
Preferably, in described accommodation space, it is provided with heating resistor, for promoting the temperature of described deposition plate.
Preferably, in described accommodation space, it is provided with temperatuer detector, for monitoring the temperature of described accommodation space in real time.
Preferably, described deposition plate is provided with sample stage, is used for placing substrate.
Preferably, the cavity wall of described reaction cavity offers reaction gas inlet.
Preferably, the cavity wall of described reaction cavity offers bleeding point, described bleeding point and vacuum extractor and connects, be used for making described reaction cavity reaches vacuum state.
Preferably, described insulation wall adopts politef or perfluoroethylene-propylene to prepare.
Preferably, described insulating wall thickness is 10-30mm.
Technical scheme additionally provides a kind of film-forming method, and described method is applied in a kind of plasma enhanced chemical vapor deposition equipment as described in technique scheme, and described method includes:
Regulate the temperature in described reaction cavity and be adjusted to 0 DEG C～800 DEG C；
After described reaction cavity evacuation is processed, it is filled with mixing gas；
The operating air pressure of described reaction cavity is adjusted to 0.1Pa～10Pa, then applies voltage, make applying power bracket be in 50W～800W, produce plasma, to prepare thin film.
By one or more technical scheme of the present invention, the invention have the advantages that or advantage:
The invention discloses a kind of plasma enhanced chemical vapor deposition equipment and film-forming method, in the apparatus of the present: invention, including reaction cavity, be internally provided with top crown and lower step；Being drawn by lower step and include deposition plate and grooved mechanism, described deposition plate is covered on the slot-type openings of described grooved mechanism, forms an accommodation space.The outer surface of grooved mechanism is covered the insulation wall that lid layer is formed by insulant, only retain deposition plate to pass into radio-frequency voltage and produce plasma and carry out plated film, ensure that the uniformity of plasma and stability so that thin-film material is uniformly deposited on substrate, it is possible to increase masking quality.
Further, water-cooling groove and heating resistor it are additionally provided with in the inside of lower step, it is possible to the temperature of step under combine regulation, realize temperature required during substrate deposition, and provide a stable film coating environment for substrate, accelerate sedimentation rate, enabling to deposition thin film uniform, masking quality is high.
It addition, be additionally provided with temperatuer detector in the inside of lower step, monitor the temperature of described lower step, the temperature conditions of step under Real-time Feedback in real time, keep the stability of the temperature of lower step.
Accompanying drawing explanation
Fig. 1 is the structural representation of PECVD device in the embodiment of the present invention.
Description of reference numerals: include reaction cavity 1, reaction cavity 1 is provided with top crown 2, deposition plate 3, water-cooling groove 4, heating resistor 5, temperatuer detector 6, insulation wall 7, RF (radio frequency, RadioFrequency) power supply 8, mechanical pump 9, sample stage 10, reaction gas inlet 11, supports platform 12, grooved mechanism 13, accommodation space 14.
Detailed description of the invention
In order to make the application the technical staff in the technical field be more clearly understood that the application, below in conjunction with accompanying drawing, by specific embodiment, technical scheme is described in detail.
In embodiments of the present invention, it is provided that a kind of plasma enhanced chemical vapor deposition equipment and film-forming method.
In the present invention, plasma enhanced chemical vapor deposition (PECVD, PlasmaEnhancedChemicalVaporDeposition) equipment can be used to prepare diamond like carbon film.
Refer to Fig. 1, be the structural representation of PECVD device in the present embodiment.
In PECVD device, reaction cavity 1 is internally provided with top crown 2 and bottom crown, and top crown 2 and bottom crown are correspondingly arranged, for instance both be arranged in parallel.
Owing to lower step 3 is mainly improved by the present invention, first introduce lower step 3 below.
The lower step 3 of the present invention is arranged on support platform 12, and lower step 3 includes deposition plate 3 and grooved mechanism 13.Deposition plate 3 is covered on the slot-type openings of described grooved mechanism 13, forms an accommodation space 14, and wherein, the outer surface of described grooved mechanism 13 is coated with the insulation wall formed by insulant.
By above description it can be seen that as a whole, lower step 3 is actually hollow structure, for instance hollow circuit cylinder build structure, naturally it is also possible to having other shape, the present invention is without limitation.
In order to match with the shape and structure of lower step 3, top crown 2 can also be arranged to cylindrical structure, and the axle center of the hollow circuit cylinder build structure of the axle center of the cylindrical structure of top crown 2 and lower step 3 is point-blank.
It addition, lower step 3 and top crown 2 are correspondingly arranged, for instance both be arranged in parallel, specifically, if lower step 3 is hollow circuit cylinder build structure, and top crown 2 is also round column structure, so deposition plate 3 is parallel with the cylindrical lower surface of top crown 2, specifically refer to Fig. 1.Certainly, top crown 2 is except hollow circular cylinder structure, it is possibility to have other planform, for instance cuboid-type or square build etc..And lower step 3 is except hollow circuit cylinder build structure, it is possibility to have other planform, as long as top crown 2 is parallel with lower step 3.
It addition, the length on lower step 3 surface parallel with top crown 2 or diameter are up to 500mm, and then can preparing large area film, the diameter of thin film is 500mm.
Owing to lower step is after passing into radio-frequency power supply, whole lower step all can produce plasma, and then the plasma distribution within reaction chamber 1 can be made uneven.Therefore, in an embodiment of the present invention, lower step is drawn include deposition plate 3 and grooved mechanism 13.The outer surface of grooved mechanism 13 is coated with the insulation wall 7 formed by insulant, therefore descends the grooved mechanism 13 in step will not produce plasma, and only retain deposition plate 3 and pass into the radio-frequency power supply uniform plasma of generation.Therefore the equipment of the present invention can produce stable plasma so that the plasma between top crown 2 and deposition plate 3 is uniformly distributed and uniform at substrate surface deposition thin film, improves coating quality.Wherein the material of insulation wall 7 is politef, and thickness is 10-30mm, it is preferable that thickness is 15mm or 20mm.
It addition, be provided with water-cooling groove 4 in accommodation space 14, in order to pass into coolant (such as water) cooling to described lower step 3, the reaction environment of a room temperature can be provided for equipment, range for 0 DEG C～60 DEG C.It addition, deposition plate 3 is further connected with RF power supply 8, it is used for producing plasma.
Certainly, in order to control the temperature of lower step 3 further, it is prevented that lower step 3 sub-cooled, in accommodation space 14, heating resistor 5 it is additionally provided with, for promoting the temperature of described lower step.Heating resistor 5 adopts the material that the coefficient of heat conduction is high, is generally copper metal.By the high copper metallic conductance of capacity of heat transmission to bottom crown, it is achieved temperature required during substrate deposition.In order to not affect plasma stability, accommodation space 14 is internal is additionally provided with temperatuer detector 6, for monitoring the temperature of described lower step in real time, Real-time Feedback subordinate plate temperature situation, and then regulate heating assembly (i.e. heating resistor 5 or water-cooling groove 4), keep the stability of the temperature of lower step 3, a stable film coating environment is provided for substrate, accelerate sedimentation rate, it is possible to making deposition thin film uniform, masking quality is high.
It addition, deposition plate 3 is provided with sample stage 10, it is used for placing substrate.
It is above about the introduction about the construction within reaction cavity 1, and in the cavity wall of reaction cavity 1, is additionally provided with reaction gas inlet 11 and bleeding point.Reaction gas inlet 11 is mainly used to pass into reacting gas, for instance: the mixing gas of argon and methane；Or the mixing gas of argon and acetylene.
And bleeding point and vacuum extractor (such as mechanical pump 9) connect, make described reaction cavity 1 reaches vacuum state under the effect of mechanical pump 9.
Certainly, also have in the present embodiment and sample fixed and the universal component of the vacuum equipment such as sealing, no longer specifically introduce in this present invention.
It it is more than the structure of PECVD device in the present invention, the quality of plated film is affected in order to prevent plasma distribution uneven, the present invention is coated with, at the outer surface of the grooved mechanism 13 of lower step 3, the insulation wall 7 formed by insulant, therefore grooved mechanism 13 can not produce plasma, and only deposition plate 3 can produce uniform plasma, plasma in reaction cavity 1 being uniformly distributed, and then improves masking quality, masking is effective.
Based on the special construction of PECVD device, the film-forming method of the present invention is as follows:
First, utilize the cooling effect of described water-cooling groove 4, make the temperature in described reaction cavity 1 be adjusted to 0 DEG C～800 DEG C；
Secondly, after described reaction cavity 1 evacuation is processed, it is filled with mixing gas.When being filled with mixing gas, by described reaction gas inlet 11, mixing gas is filled with in described reaction cavity 1.
Again, the operating air pressure of described reaction cavity 1 is adjusted to 0.1Pa～10Pa, then applies voltage, make applying power bracket be in 50W～800W, produce plasma and prepare thin film.Certainly, in order to reach masking effect better, can grid bias power supply be led on substrate, to apply the back bias voltage 0V-350V preset on substrate, to prepare thin film.
Below to prepare diamond like carbon film, introduce concrete coating process:
In early-stage preparations, first according to different experiment purposes, corresponding technological parameter can be set, for instance control the vacuum of coating chamber or pressure, control reacting gas ventilation, control interelectrode discharging gap etc..
After setting technological parameter, then can carry out below step.
1, PECVD device is carried out pretreatment.
Owing to PECVD device of the present invention can plate polytype film, and the plated film of every kind of film requires difference, therefore, in order to avoid the plated film impact on this plated film last time, before this plated film, it is necessary to PECVD device is carried out pretreatment.This embodiment is to prepare diamond like carbon film, before preparation, it is necessary to adopts argon plasma that reaction cavity 1 and substrate surface are carried out prerinse and is about 15min.
2, substrate is carried out.
Substrate has polytype, for instance glass substrate, monocrystalline silicon substrate etc..In the process cleaned, it is usually and utilizes ultrasonic cleaner to clean substrate.Scavenging period is the present invention do not limit, for instance cleans 5 minutes, 15 minutes etc. and all may be used.And clean time deoil according to alkali liquor, distilled water cleaning, acetone cleaning, ultrasonic waves for cleaning, ethanol dehydration order be carried out, dry up substrate or heating, drying substrate after cleaning with drying nitrogen.
3, cleaned substrate is put on sample stage 10, then the chamber door of capping cavity 1.
4, after checking that water source, source of the gas and power supply are normal, open cooling circulating water, utilize water-cooling groove 4 to pass into cooling circulating water, it is ensured that the temperature of lower step 3 meets requirement, temperature is controlled at 0 DEG C～800 DEG C.Additionally can also control between 0 DEG C～60 DEG C.
5, evacuation, is better than 5 × 10 to vacuum-4Pa。
6, open gas cylinder, by described reaction gas inlet 11, mixing gas is filled with in described reaction cavity 1.
The mixing gas passed into is specifically: mixing gas (Ar and the CH of argon and methane4Mixing gas), or mixing gas (Ar and the C of argon and acetylene2H2Mixing gas).The present invention is with Ar and CH4Mixing gas be example, pass into ratio 1:10, certainly can according to practical situation adjustment.Ar/CH is controlled by mass flow controller4Or Ar/C2H2Ratio.
7, setting operating air pressure 0.1Pa～10Pa (or 2Pa～10Pa), opening power according to experiment condition, the power applying to preset is about 50W to 800W, produces plasma.Can certainly setting power be other scopes, for instance 300～800W.
8, set substrate temperature room temperature less than 60 DEG C, open grid bias power supply and on substrate, apply the back bias voltage 0V-350V preset, to prepare thin film, or being adjusted to 150V-350V to prepare thin film.
9, according to technological parameter depositing diamond-like thin film 30min, then terminate plated film, close power supply and gas afterwards.
10, thin film is shelved a period of time under vacuum conditions, for instance 1.5h～2h (1.5 hours～2 hours), makes thin film firmly grow on silicon chip, it is prevented that to come off.Open charge valve to after reaction cavity 1 inflation, open the door of reaction cavity 1, take out thin film and observe.
11, close the door of reaction cavity 1, turns off main power, cuts off cooling water.
By one or more embodiment of the present invention, the invention have the advantages that or advantage:
The invention discloses a kind of plasma enhanced chemical vapor deposition equipment and film-forming method, in the apparatus of the present: invention, including reaction cavity, be internally provided with top crown and lower step；Being drawn by lower step and include deposition plate and grooved mechanism, described deposition plate is covered on the slot-type openings of described grooved mechanism, forms an accommodation space.The outer surface of grooved mechanism is covered the insulation wall that lid layer is formed by insulant, only retain deposition plate to pass into radio-frequency voltage and produce plasma and carry out plated film, ensure that the uniformity of plasma and stability so that thin-film material is deposited on substrate uniformly, it is possible to increase masking quality.
Further, water-cooling groove and heating resistor it are additionally provided with in the inside of lower step, it is possible to the temperature of step under combine regulation, realize temperature required during substrate deposition, and provide a stable film coating environment for substrate, accelerate sedimentation rate, enabling to deposition thin film uniform, masking quality is high.
It addition, be additionally provided with temperatuer detector in the inside of lower step, monitor the temperature of described lower step, the temperature conditions of step under Real-time Feedback in real time, keep the stability of the temperature of lower step.
Although having been described for the preferred embodiment of the application, but one of ordinary skilled in the art is once know basic creative concept, then these embodiments can be made other change and amendment.So, claims are intended to be construed to include preferred embodiment and fall into all changes and the amendment of the application scope.
Obviously, the application can be carried out various change and modification without deviating from spirit and scope by those skilled in the art.So, if these amendments of the application and modification belong within the scope of the application claim and equivalent technologies thereof, then the application is also intended to comprise these change and modification.
Claims (10)
1. a plasma enhanced chemical vapor deposition equipment, it is characterised in that including:
Reaction cavity, is internally provided with top crown and lower step；Described top crown and described lower step are correspondingly arranged；
Described lower step includes deposition plate and grooved mechanism, and described deposition plate is covered on the slot-type openings of described grooved mechanism, forms an accommodation space, and wherein, the outer surface of described grooved mechanism is coated with the insulation wall formed by insulant.
2. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 1, it is characterised in that
It is provided with water-cooling groove in described accommodation space, is used for passing into coolant and described deposition plate is lowered the temperature.
3. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 1 or 2, it is characterised in that
It is provided with heating resistor, for promoting the temperature of described deposition plate in described accommodation space.
4. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 3, it is characterised in that be provided with temperatuer detector in described accommodation space, for monitoring the temperature of described accommodation space in real time.
5. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 1, it is characterised in that be provided with sample stage on described deposition plate, be used for placing substrate.
6. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 1, it is characterised in that offer reaction gas inlet in the cavity wall of described reaction cavity.
7. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 1, it is characterised in that offer bleeding point, described bleeding point and vacuum extractor in the cavity wall of described reaction cavity and connect, be used for making to reach vacuum state in described reaction cavity.
8. a kind of plasma enhanced chemical vapor deposition equipment as claimed in claim 1, it is characterised in that described insulation wall adopts politef or perfluoroethylene-propylene to prepare.
9. a kind of plasma enhanced chemical vapor deposition equipment as described in claim 1 or 8, it is characterised in that described insulating wall thickness is 10-30mm.
10. a film-forming method, described method is applied in a kind of plasma enhanced chemical vapor deposition equipment as described in claim as arbitrary in claim 1-9, it is characterised in that described method includes:
Regulate the temperature in described reaction cavity and be adjusted to 0 DEG C～800 DEG C；
After described reaction cavity evacuation is processed, it is filled with mixing gas；
The operating air pressure of described reaction cavity is adjusted to 0.1Pa～10Pa, then applies voltage, make applying power bracket be in 50W～800W, produce plasma, to prepare thin film.
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| CN106290983A (en) * | 2016-07-28 | 2017-01-04 | 西安交通大学 | A kind of acceleration sensor chip based on amorphous carbon film |
| CN116837354A (en) * | 2023-09-01 | 2023-10-03 | 上海陛通半导体能源科技股份有限公司 | Semiconductor heating device and vapor deposition apparatus |
| CN116837354B (en) * | 2023-09-01 | 2023-11-24 | 上海陛通半导体能源科技股份有限公司 | Semiconductor heating device and vapor deposition apparatus |
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