CN116837354A - Semiconductor heating device and vapor deposition apparatus - Google Patents
Semiconductor heating device and vapor deposition apparatus Download PDFInfo
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- CN116837354A CN116837354A CN202311119966.2A CN202311119966A CN116837354A CN 116837354 A CN116837354 A CN 116837354A CN 202311119966 A CN202311119966 A CN 202311119966A CN 116837354 A CN116837354 A CN 116837354A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 131
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 239000000110 cooling liquid Substances 0.000 claims description 11
- 210000004907 gland Anatomy 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000427 thin-film deposition Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
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- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application discloses a semiconductor heating device and vapor deposition equipment, and relates to the technical field of semiconductors. The semiconductor heating apparatus includes a heating assembly having a support surface for supporting the semiconductor device and an acoustic source assembly for heating the semiconductor device on the support surface; the sound wave source assembly is connected to the heating assembly for applying sound wave vibration to the heating assembly. The semiconductor heating device provided by the application is integrated with the sound wave source assembly, and can apply sound wave vibration to the heating assembly and even the semiconductor device when the heating assembly heats the semiconductor device. The sound wave vibration can cause cavitation, thereby improving the film deposition effect. Even when the film covering is carried out on the holes with high depth-to-width ratio, the covering can be filled well, and the reliability of device interconnection is guaranteed. The vapor deposition equipment provided by the application comprises the reaction chamber and the semiconductor heating device, so that the effect of depositing the film is better.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a semiconductor heating device and vapor deposition equipment.
Background
The integrated circuit chip fabrication process can be generalized to two stages, with a large number of transistors isolated from each other fabricated on a silicon wafer by a front-end-of-line (FEOL) process, and then connected to an electronic circuit with specific functions by a back-end-of-line (BEOL) process, i.e., a metal interconnect technology. Therefore, the significance of metal interconnects to integrated circuits is self-evident. Currently, conventional physical vapor deposition (physical vapor deposition, PVD) or chemical vapor deposition (chemical vapor deposition, CVD) equipment can complete the interconnect process of metal films. However, in the process of deep hole interconnection of micron and submicron with high aspect ratio, the side wall and the bottom of the deep hole interconnection are difficult to obtain good filling, the coverage rate of the side wall film is easy to be low, or holes and the like are easy to appear in the deep hole structure, so that the service life and the reliability of the thin film interconnection device are seriously reduced. As integrated circuit technology evolves rapidly, metal interconnect structures and fabrication processes become increasingly complex, and new equipment and process flows are continually being developed to optimize and improve the advancement and reliability of the interconnect process. However, in the conventional thin film deposition apparatus, when depositing a thin film on a semiconductor device (e.g., a wafer), the deposition effect is poor, resulting in poor life and reliability of the thin film interconnection device.
Disclosure of Invention
The object of the present application includes, for example, providing a semiconductor heating apparatus and vapor deposition apparatus capable of improving a thin film deposition effect on a semiconductor device, thereby improving the reliability of the semiconductor device.
Embodiments of the application may be implemented as follows:
in a first aspect, the present application provides a semiconductor heating apparatus comprising:
a heating assembly having a support surface for supporting the semiconductor device, the heating assembly for heating the semiconductor device on the support surface;
and the sound wave source assembly is connected with the heating assembly and is used for applying sound wave vibration to the heating assembly.
In an alternative embodiment, the heating assembly comprises a carrying disc and a heating element arranged on the carrying disc, one side of the carrying disc forms a supporting surface, and the sound wave source assembly is connected to the other side of the carrying disc, which is away from the supporting surface.
In an alternative embodiment, the acoustic wave source assembly includes an acoustic wave source disc having a receiving cavity formed therein and an acoustic wave generator disposed within the receiving cavity.
In an alternative embodiment, the receiving chamber is filled with a cooling fluid.
In an alternative embodiment, the semiconductor heating apparatus further comprises a chiller and a liquid-cooled tube, the chiller, the liquid-cooled tube and the containment chamber forming a loop for circulating the cooling liquid.
In an alternative embodiment, the sonic source disc comprises a disc body and a gland, the disc body forms a containing cavity with an opening, the opening is arranged on one side of the disc body away from the heating component, and the gland is connected to the opening of the containing cavity in a sealing manner through a fastener and a sealing piece.
In an alternative embodiment, the semiconductor heating apparatus further comprises an insulating disk, and the acoustic wave source assembly is connected to the heating assembly through the insulating disk.
In an alternative embodiment, the insulating disk is made of Al 2 O 3 、ZrO 2 、Y 2 O 3 At least one of them.
In an alternative embodiment, the semiconductor heating device further comprises a lifting mechanism, wherein the lifting mechanism comprises a driving assembly and a plurality of lifting pins, the supporting surface of the heating assembly is provided with pin holes, and the lifting pins are inserted into the pin holes; the driving assembly is in transmission connection with the lifting pins and can drive the lifting pins to move along the axes of the lifting pins, and the end parts of the lifting pins are used for jacking or descending the semiconductor devices on the supporting surface together.
In an alternative embodiment, the semiconductor heating device further comprises a support shaft, one end of the support shaft is connected to the acoustic wave source assembly, a wire passing cavity is arranged in the support shaft, and wires of the heating assembly and the acoustic wave source assembly extend out from the other end of the support shaft through the wire passing cavity.
In a second aspect, the present application provides a vapor deposition apparatus comprising a reaction chamber and a semiconductor heating device of any of the preceding embodiments, the heating assembly and the sonic source assembly being located within the reaction chamber.
The beneficial effects of the embodiment of the application include, for example:
the semiconductor heating device provided by the application comprises a heating component and an acoustic source component, wherein the heating component is provided with a supporting surface for supporting a semiconductor device, and is used for heating the semiconductor device on the supporting surface; the sound wave source assembly is connected to the heating assembly for applying sound wave vibration to the heating assembly. The semiconductor heating device provided by the embodiment of the application is integrated with the sound wave source component, so that the sound wave vibration can be applied to the heating component and even the semiconductor device when the semiconductor device is heated by the heating component. The sonic vibration causes cavitation to produce violent impact between the particles of the deposited material, thus producing pressures of thousands to tens of thousands of atmospheres, and the temperature is suddenly increased to accelerate the chemical reaction between the materials, thereby improving the film deposition effect. Even when the film covering is carried out on the holes with high depth-to-width ratio, the covering can be filled well, and the reliability of device interconnection is guaranteed.
The vapor deposition equipment provided by the embodiment of the application comprises the reaction chamber and the semiconductor heating device, so that the effect of depositing the film is better.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a heating element side of a semiconductor heating apparatus according to an embodiment of the present application;
FIG. 2 is a schematic view of one side of an acoustic wave source assembly of a semiconductor heating apparatus according to an embodiment of the present application;
fig. 3 is a cross-sectional view of the semiconductor heating apparatus of fig. 1 taken along the direction a;
fig. 4 is a cross-sectional view of the semiconductor heating apparatus of fig. 1 taken along the direction B;
FIG. 5 is a schematic diagram of an acoustic wave generator according to an embodiment of the present application;
fig. 6 is a schematic view of an outlet end of a supporting shaft according to an embodiment of the application.
Icon: 100-heating assembly; 110-a carrier tray; 120-heating element; 130-thermocouple; 140-pin holes; 150-lifting pins; 200-heat insulation plate; 300-sonic source assembly; 310-an acoustic source disc; 311-a tray body; 312-gland; 313-seal; 314-a fastener; 320-accommodating chambers; 330-liquid-cooled tube; 340-an acoustic wave generator; 341-a circuit board; 342-components; 350-an acoustic wave source power supply line; 400-supporting shaft; 410-wire lumen.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present application and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
In order to solve the problem that the existing related equipment has poor deposition effect (especially when holes with larger depth-to-width ratio are needed to be filled) when films are deposited on the surfaces of semiconductor devices, the embodiment of the application provides a semiconductor heating device and vapor deposition equipment. Meanwhile, the sound wave vibration function can improve the hole filling effect when a film is deposited on the wafer.
FIG. 1 is a schematic view of a heating element 100 of a semiconductor heating apparatus according to an embodiment of the present application; FIG. 2 is a schematic diagram of one side of an acoustic wave source assembly 300 of a semiconductor heating apparatus according to an embodiment of the present application; fig. 3 is a cross-sectional view of the semiconductor heating apparatus of fig. 1 taken along the direction a; fig. 4 is a sectional view of the semiconductor heating apparatus of fig. 1 taken along the direction B. Referring to fig. 1 to 4, the semiconductor heating apparatus according to the embodiment of the present application may be applied to a vapor deposition apparatus, particularly for supporting a semiconductor device while depositing a thin film, and heating and applying acoustic vibration to the semiconductor device. The semiconductor device may be a wafer.
The semiconductor heating apparatus provided by the embodiment of the application comprises a heating assembly 100 and an acoustic wave source assembly 300. The heating assembly 100 has a support surface (i.e., the upper surface in fig. 3 and 4) for supporting the semiconductor device, and the heating assembly 100 is used for heating the semiconductor device on the support surface. The sonic source assembly 300 is connected to the heating assembly 100 for applying sonic vibrations to the heating assembly 100. Alternatively, the sonic source assembly 300 may be directly coupled to the heating assembly 100 or indirectly coupled to the heating assembly 100 to transfer sonic vibrations to the heating assembly 100.
The acoustic wave source assembly 300 has components 342 comprising a piezoelectric ceramic material disposed therein that are at a temperature of less than 100 ℃ for extended periods of time. In order to ensure that the acoustic wave source assembly 300 can operate properly, in this embodiment, the semiconductor heating apparatus further includes an insulating plate 200, and the acoustic wave source assembly 300 is connected to the heating assembly 100 through the insulating plate 200. The thermal shield 200 can reduce temperature transmission between the heating assembly 100 and the sonic source assembly 300, thereby avoiding the higher temperature generated by the heating assembly 100 from affecting the normal operation of the sonic source assembly 300. The material of the heat insulating plate 200 is selected from Al 2 O 3 、ZrO 2 、Y 2 O 3 At least one of them. The Al mentioned above 2 O 3 、ZrO 2 、Y 2 O 3 The materials have lower heat conductivity coefficient, can play a better heat insulation effect, have better rigidity, and can effectively transmit the sound wave vibration generated by the sound wave source assembly 300 to the heating assembly 100.
In alternative embodiments, the insulating disk 200 may not be provided, such as where the sonic source assembly 300 has better high temperature resistance or the process temperature of the heating assembly 100 is not high.
In the embodiment of the present application, the heating element 100, the heat insulating plate 200 and the acoustic wave source element 300 are all disc-shaped and are sequentially stacked.
In this embodiment, the heating assembly 100 includes a carrier plate 110, a heating element 120, and a thermocouple 130. One side of the carrier plate 110 in its axial direction (up-down direction of fig. 3, 4) forms a supporting surface, and the insulating plate 200 and the sonic source assembly 300 are connected to the other side of the carrier plate 110 facing away from the supporting surface. The carrier plate 110 may be selected from a material having good thermal conductivity, good corrosion resistance, and good strength, such as AlN ceramic. The heat emitted from the heating member 120 can be efficiently transferred to the wafer through the susceptor 110.
In this embodiment, the heating element 120 is a heating wire. The heating element 120 is disposed on the side of the carrier plate 110 near the insulating plate 200, which is advantageous for making the heat quantity at the supporting surface more uniform. In alternative embodiments, the heating element 120 may be embedded within the carrier plate 110.
In the present embodiment, the heating member 120 is disposed around the center of the carrier plate 110 and distributed in a plurality of sections in the radial direction of the carrier plate 110, which is advantageous in that the carrier plate 110 is uniformly heated. Further, the density of the heating member 120 is smaller near the center of the susceptor 110 than near the edges of the susceptor 110. The reason for this is that the heat dissipation is stronger at the position close to the edge of the carrier plate 110, and thus a higher density of the heating member 120 is required to keep the temperature consistent with the central region, thereby ensuring that the wafer can be uniformly heated and improving the uniformity of the thin film deposition.
The carrier plate 110 of the heating assembly 100 and the heat insulation plate 200 may be fixedly connected by vacuum brazing, thereby ensuring connection stability. In alternative embodiments, fasteners such as screws may be used for the attachment.
In this embodiment, the probe end of the thermocouple 130 is embedded in the carrier plate 110 and is adjacent to the support surface. The thermocouple 130 is able to detect the temperature near the support surface to ensure that the wafer is at the proper process temperature for the deposition process. The thermocouple 130 may be provided in one or more, and when a plurality of thermocouples 130 are provided, the thermocouples 130 are distributed at different positions near the supporting surface, so that the temperature at different positions and the heating uniformity of the heating assembly 100 can be monitored. Further, the thermocouple 130 and the heating element 120 may be electrically connected to a PID (Proportional Integral Derivative) controller (not shown) to control the temperature of the heating assembly 100.
In the present embodiment, the acoustic wave source assembly 300 includes an acoustic wave source tray 310 and an acoustic wave generator 340, wherein the acoustic wave source tray 310 has a receiving chamber 320 formed therein, and the acoustic wave generator 340 is disposed in the receiving chamber 320. The sonic wave generator 340 is configured to emit ultrasonic waves or megasonic waves, and the generated sonic wave vibration can induce cavitation, thereby effectively assisting the thin film deposition process. The sonic source disk 310 may be made of stainless steel (e.g., SUS 316L).
Fig. 5 is a schematic diagram of an acoustic wave generator 340 in an embodiment of the present application. As shown in fig. 5, the acoustic wave generator 340 includes an annular circuit board 341 (PCB) and a component 342 disposed on the circuit board 341, and the component 342 is used for generating acoustic wave vibration. In the present embodiment, a plurality of rows of components 342 are provided on the circuit board 341, the components 342 in each row are arranged at intervals in the radial direction, and the components 342 in each row are arranged at intervals uniformly around the circumferential direction of the circuit board 341.
Further, the sonic source plate 310 includes a plate body 311 and a pressing cover 312, the plate body 311 forms a receiving cavity 320 having an opening, the opening is formed at one side of the plate body 311 facing away from the heating assembly 100, and the pressing cover 312 is hermetically connected to the opening of the receiving cavity 320 through a fastening member 314 and a sealing member 313. The fasteners 314 may be screws and the seal 313 may be one or more seals. In the present embodiment, the accommodating cavity 320 is adapted to the shape of the acoustic wave generator 340, and is thus also an annular cavity; the gland 312 is also annular in shape.
In this embodiment, the tray body 311 and the heat insulation tray 200 may be fixedly connected by vacuum brazing, thereby ensuring connection stability. In alternative embodiments, fasteners such as screws may be used for the attachment. The circuit board 341 of the acoustic wave generator 340 may be fixedly connected to the gland 312, with the side of the component 342 facing the insulating disk 200 and the heating assembly 100.
Further, the accommodating chamber 320 is filled with a cooling liquid. On the one hand, the cooling liquid surrounds the sound wave generator 340, so that heat can be absorbed, and the sound wave generator 340 is prevented from being overheated to influence the normal work of the cooling liquid. On the other hand, the working environment where the semiconductor heating device is located is often an environment with a higher vacuum degree, and sound waves are difficult to propagate in such an environment, so that the problem that the sound wave vibration is difficult to reach the wafer exists; by filling the cooling liquid, the transmission loss of the sonic vibration energy can be reduced, so that the wafer on the surface of the carrier plate 110 can obtain enough sonic vibration energy.
Further, the semiconductor heating apparatus further includes a water chiller (not shown) and a liquid cooling pipe 330, and the water chiller, the liquid cooling pipe 330 and the accommodating chamber 320 form a loop through which the cooling liquid circulates. Specifically, the liquid cooling pipe 330 may include a water inlet pipe and a water outlet pipe, which are respectively connected to the inlet and the outlet of the receiving chamber 320, and the other end is connected to the water chiller, thereby realizing circulation of the cooling liquid. The cooling liquid absorbs heat in the accommodating chamber 320 to raise the temperature, and releases heat at the water chiller to lower the temperature. In use, the cooling fluid may be maintained at 30-100 ℃ in the receiving chamber 320.
Since the acoustic wave generator 340 is in direct contact with the coolant, in this embodiment, the coolant should be an insulating fluid medium to avoid short circuits. Alternatively, the cooling liquid is ultrapure water in which the ion concentration is extremely low, and thus the resistivity is extremely high.
Fig. 6 is a schematic diagram of an outlet end of the support shaft 400 according to an embodiment of the application. Referring to fig. 3, 4 and 6, in the present embodiment, the semiconductor heating apparatus further includes a support shaft 400, and the support shaft 400 is connected to the center of the acoustic wave source assembly 300, and plays a role in supporting the acoustic wave source assembly 300, the heat insulation plate 200 and the heating assembly 100. One end of the support shaft 400 is connected to the acoustic wave source assembly 300, a wire passing cavity 410 is provided in the support shaft 400, and wires of the heating assembly 100 and the acoustic wave source assembly 300 extend from the other end of the support shaft 400 through the wire passing cavity 410. Since both the heating member 120 and the sonic generator 340 require power to operate, lines are provided for power supply, which may protrude from the lower end of the entire semiconductor heating apparatus through the wire passing chamber 410 of the support shaft 400 and are connected to an external power source. As shown in the drawing, the acoustic wave generator 340 is connected to an acoustic wave source-supplying wire 350, and the acoustic wave source-supplying wire 350 protrudes from the wire outlet end of the support shaft 400 through a wire passing chamber 410.
Further, in the present embodiment, the rear end of the thermocouple 130 and the liquid cooling tube 330 also protrude from the outlet end of the support shaft 400 through the wire passing chamber 410. It should be appreciated that the insulating disk 200 also requires the provision of corresponding hole site avoidance thermocouples 130 and associated circuitry for the heating member 120.
Referring to fig. 1 to 4, further, the semiconductor heating apparatus further includes a lifting mechanism, the lifting mechanism includes a driving assembly (not shown) and a plurality of lifting pins 150, the supporting surface of the heating assembly 100 is provided with pin holes 140, and the lifting pins 150 are inserted into the pin holes 140. The drive assembly is in driving communication with the lift pins 150 and is operable to drive the lift pins 150 along their axes, with the ends of each lift pin 150 being used to collectively lift or lower a semiconductor device (e.g., a wafer) on a support surface. The lifting mechanism can meet the requirement of up-and-down movement of the wafer in the thin film deposition process.
In the present embodiment, the lifting mechanism includes three lifting pins 150, and the three lifting pins 150 are uniformly spaced around the center of the carrier tray 110. The elevation pin 150 penetrates the heating assembly 100, the insulating pan 200, and the sonic source assembly 300 so as to protrude below the sonic source assembly 300. The driving assembly can be in transmission connection with the lower end of the lifting pin 150, so that the lifting of the lifting pin 150 is realized; in alternative other embodiments, the drive assembly may also be integrated into the heating assembly 100, the insulating disk 200, or the sonic source assembly 300.
In the present embodiment, the material of the lift pin 150 is corrosion-resistant AlN, al 2 O 3 、ZrO 2 And the like.
The embodiment of the present application further provides a vapor deposition apparatus, which includes a reaction chamber and the semiconductor heating device in the above embodiment, wherein the heating assembly 100, the heat insulation plate 200 and the sonic wave source assembly 300 are located in the reaction chamber, and the support shaft 400 extends from the lower side of the reaction chamber. The reaction chamber is capable of providing a vacuum environment suitable for thin film deposition. It should be understood that the vapor deposition apparatus should also include other components for implementing the thin film deposition process, such as pipelines for conveying process materials, etc., and the arrangement and specific principles of these components may refer to the prior art, and will not be described herein.
The semiconductor heating device and the vapor deposition apparatus for interconnection process provided by the embodiments of the present application can greatly improve the reliability of film filling of the hole and slot structure, especially, the acoustic wave source assembly 300 connected with the heating assembly 100 (via the heat insulation disc 200) can directly generate acoustic wave vibration, so that the acoustic wave vibration acts on the bearing surface of the heating assembly 100, and serious loss of the acoustic wave vibration energy caused by the high vacuum environment is avoided, so that sufficient acoustic wave vibration energy is obtained at the wafer on the surface of the bearing disc 110. Particularly in the micron and submicron deep hole interconnection process with high aspect ratio, the side wall and the bottom of the deep hole can be well filled, and the service life and the reliability of the thin film interconnection device can be improved.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (11)
1. A semiconductor heating apparatus, comprising:
a heating assembly having a support surface for supporting a semiconductor device, the heating assembly for heating the semiconductor device on the support surface;
and the sound wave source assembly is connected with the heating assembly and used for applying sound wave vibration to the heating assembly.
2. The semiconductor heating apparatus of claim 1, wherein the heating assembly comprises a carrier plate and a heating element disposed on the carrier plate, one side of the carrier plate forms the support surface, and the sonic source assembly is connected to the other side of the carrier plate facing away from the support surface.
3. The semiconductor heating apparatus of claim 1, wherein the sonic source assembly comprises a sonic source disc having a receiving cavity formed therein and a sonic generator disposed within the receiving cavity.
4. A semiconductor heating apparatus according to claim 3, wherein the accommodating chamber is filled with a cooling liquid.
5. The semiconductor heating apparatus of claim 4, further comprising a chiller and a liquid cooled tube, wherein the chiller, the liquid cooled tube, and the containment chamber form a loop through which the cooling liquid circulates.
6. A semiconductor heating apparatus according to claim 3, wherein the sonic source disc comprises a disc body and a gland, the disc body forming the receiving chamber with an opening, the opening being provided on a side of the disc body facing away from the heating assembly, the gland being sealingly connected to the receiving chamber at the opening by a fastener and a seal.
7. The semiconductor heating apparatus of claim 1, further comprising an insulating pan, wherein the acoustic wave source assembly is connected to the heating assembly by the insulating pan.
8. The semiconductor heating apparatus according to claim 7, wherein the insulating plate is made of Al 2 O 3 、ZrO 2 、Y 2 O 3 At least one of them.
9. The semiconductor heating apparatus according to claim 1, further comprising a lifting mechanism including a driving assembly and a plurality of lifting pins, wherein the support surface of the heating assembly is provided with pin holes, and the lifting pins are inserted into the pin holes; the driving assembly is in transmission connection with the lifting pins and can drive the lifting pins to move along the axes of the lifting pins, and the end parts of the lifting pins are used for jacking or descending the semiconductor devices on the supporting surface together.
10. The semiconductor heating apparatus of claim 1, further comprising a support shaft having one end connected to the acoustic wave source assembly, a wire passing cavity being provided in the support shaft, and wires of the heating assembly and the acoustic wave source assembly extending from the other end of the support shaft through the wire passing cavity.
11. A vapor deposition apparatus comprising a reaction chamber and the semiconductor heating device of any one of claims 1-10, the heating assembly and the sonic source assembly being located within the reaction chamber.
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