CN112103222A - Megasonic wave-assisted film deposition equipment and method for filling deep hole with high depth-to-width ratio - Google Patents
Megasonic wave-assisted film deposition equipment and method for filling deep hole with high depth-to-width ratio Download PDFInfo
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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Abstract
The invention provides megasonic wave-assisted film deposition equipment and a method for filling a deep hole with a high depth-to-width ratio, which are used for filling a deep hole with a depth-to-width ratio more than 5. The equipment comprises a cavity, a base, a supporting shaft, a megasonic transducer, a megasonic transmitting layer and a megasonic isolated sealing ring; the base, the megasonic transducer and the megasonic transmitting layer are all positioned in the cavity; the center points of the base, the megasonic transducer and the megasonic transmitting layer are positioned on the same vertical line; the megasonic transducer is positioned in the base, the megasonic transmitting layer is attached to the upper surface of the megasonic transducer, and the wafer is positioned above the megasonic transmitting layer; the supporting shaft is connected with the base and extends from the inner part of the cavity to the outer part of the cavity; the megasonic wave isolation sealing ring is positioned between the cavity and the supporting shaft, so that the megasonic waves are prevented from being transmitted to the cavity while the cavity is sealed. The invention is beneficial to improving the uniformity and efficiency of deep hole filling, avoiding damaging the surface of the wafer and improving the reliability of devices.
Description
Technical Field
The invention relates to semiconductor manufacturing equipment, in particular to film deposition equipment, and particularly relates to megasonic-assisted film deposition equipment and a method for filling a deep hole with a high depth-to-width ratio.
Background
With the development of three-dimensional packaging technology, the integration level of devices is increasing, and the aperture of a Through Silicon Via (abbreviated as TSV) is becoming smaller and smaller, usually within a range of 1 μm to 100 μm. If the depth of the TSV is less than 10 μm and the aperture is 10 μm, namely the aspect ratio is less than 1, normal filling of the metal film can be completed by common PVD or CVD process equipment; however, good filling is often difficult to obtain at the side walls and bottoms of micron and submicron deep hole structures with high aspect ratios greater than 1, and a discontinuous film layer is easy to appear on the side walls or a hole (void) appears inside the deep hole structure; when the aspect ratio of the TSV is greater than 5, and the bottom of the TSV is not completely filled, the upper hole is already covered by PVD or CVD deposition, which will form a hollow metal connection, and greatly reduce the lifetime and reliability of the film-covered device.
Ultrasonic wave assistance is a technique that utilizes ultrasonic cavitation and the mechanical effects of shock waves, micro-acoustic flow and micro-jet vibration generated along with the cavitation. At present, in the field of semiconductor manufacturing, an ultrasonic technology is widely applied to processes involving liquid raw materials such as cleaning and electroplating, for example, ultrasonic-assisted application to an electroplating deposition process can assist in filling TSV deep holes with a high aspect ratio in a range of 1-5, but deep holes with a high aspect ratio greater than 5 are difficult to fill, and certain damage can be caused to the surface of a wafer to be deposited.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a megasonic-assisted thin film deposition apparatus and method for filling a deep hole with a high aspect ratio, so as to solve the problems that the conventional ultrasonic-assisted thin film deposition apparatus is only suitable for deposition from a liquid source, is difficult to deposit a deep hole with a high aspect ratio (an aspect ratio greater than 5), and also causes a certain damage to a wafer surface to be deposited.
In order to achieve the above and other related objects, the present invention provides a megasonic-assisted thin film deposition apparatus for filling a deep hole with a high aspect ratio, which is used for filling a deep hole with an aspect ratio greater than 5, and comprises a cavity, a base, a support shaft, a megasonic transducer, a megasonic transmission layer and a megasonic isolation sealing ring; the base, the megasonic transducer and the megasonic transmitting layer are all positioned in the cavity, and the central points of the base, the megasonic transducer and the megasonic transmitting layer are positioned on the same vertical line; the megasonic transducer is positioned in the base, the megasonic transmitting layer is attached to the upper surface of the megasonic transducer, and the wafer to be deposited is positioned above the megasonic transmitting layer; the supporting shaft is connected with the base and extends from the inside of the cavity to the outside of the cavity; the megasonic wave isolation sealing ring is positioned between the cavity and the supporting shaft, so that the megasonic waves are prevented from being transmitted to the cavity while the cavity is sealed.
Optionally, the megasonic transducer comprises one or both of a magnetic transducer and a piezoelectric transducer.
Optionally, the megasonic wave transmission layer includes an electrostatic chuck, the wafer to be deposited is attached to an upper surface of the electrostatic chuck, and the electrostatic chuck is provided with an electrostatic adsorption hole.
In another alternative, the megasonic transducer includes a circular substrate and a protective layer on the surface of the circular substrate, a wafer to be deposited is attached to the upper surface of the protective layer, and the support shaft passes through the megasonic transducer and the circular substrate.
Optionally, a boss is arranged at the circumferential edge of the circular base plate, and a sealing ring is arranged on the boss.
Optionally, the material of the megasonic isolation sealing ring comprises one or more of anti-corrosive rubber, silica gel, asphalt, and sound absorbing cotton.
Optionally, the megasonic-assisted thin film deposition apparatus comprises one of a CVD apparatus and a PVD apparatus.
Optionally, a plurality of notches recessed toward the inner side of the base are uniformly distributed on the periphery of the base, the plurality of notches vertically penetrate through the base, the megasonic assisted thin film deposition apparatus further includes a plurality of correction posts, the correction posts are correspondingly arranged in the notches one to one, the correction posts are parallel to the support shaft, the top surfaces of the correction posts are provided with inclined guide surfaces, and when a wafer is supported by the correction posts, the edge of the wafer contacts with the inclined guide surfaces.
The invention also provides a megasonic wave-assisted film deposition method, which uniformly transmits megasonic wave energy to a wafer to be deposited in the film deposition process so as to assist in completing deep hole filling on the wafer.
Optionally, the megasonic-assisted thin film deposition method further comprises supplying an inert gas to the surface of the wafer during thin film deposition, and uniformly transferring megasonic energy to the wafer to be deposited by the inert gas to assist in completing deep hole filling on the wafer.
As described above, the megasonic-assisted thin film deposition apparatus and method for filling a deep hole with a high aspect ratio according to the present invention have the following advantages: according to the improved design, the megasonic wave is utilized to assist the film deposition, the high-frequency sonic energy is utilized to enable the deposition source, including but not limited to liquid substances, to continuously impact the surface of the wafer to be deposited in an accelerated fluid mode, so that the film deposited on the surface of the wafer can be more uniformly filled on the side wall and the bottom of the micron and submicron deep hole structure with the high depth-to-width ratio to form a continuous film layer on the side wall, the effect of uniformly filling the TSV deep hole of the wafer is achieved, the damage to the surface of the wafer can be avoided, the filling of the deep hole structure can be greatly improved, the filling rate can be improved by more than 30%, the reliability of the TSV through hole and the deep hole device with the high depth-to-width ratio (more than 5) can be effectively improved, the filling.
Drawings
Fig. 1 is a schematic cross-sectional view of a megasonic-assisted thin film deposition apparatus for filling a deep hole with a high aspect ratio according to an embodiment of the present invention.
Fig. 2 is an exploded view of the megasonic-assisted thin film deposition apparatus of fig. 1.
Fig. 3 is a schematic diagram illustrating a positional relationship between a susceptor and a megasonic transducer in the megasonic-assisted thin film deposition apparatus of fig. 1.
Fig. 4 is a schematic diagram showing a positional relationship between a calibration pillar and a susceptor in the megasonic-assisted thin film deposition apparatus provided by the present invention.
Description of the element reference numerals
11-a cavity; 12-a base; 121-a notch; 13-supporting the shaft; 14-megasonic transducer; 15-mega acoustic wave transmission layer; 151-circular substrate; 1511-boss; 152-a protective layer; 1521-air guide groove; 153-sealing ring; a 16-megasonic isolation seal ring; 17-a fixed pin; 18-a calibration column; 19-wafer.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1 to 4. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms such as "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and changes or modifications of the relative relationship may be made without substantial technical changes.
Ultrasonic wave assistance is a technique that utilizes ultrasonic cavitation and the mechanical effects of shock waves, micro-acoustic flow and micro-jet vibration generated along with the cavitation. At present, in the field of semiconductor manufacturing, an ultrasonic technology is widely applied to processes involving liquid raw materials such as cleaning and electroplating, for example, ultrasonic-assisted application to an electroplating deposition process can assist in filling TSV deep holes with a high aspect ratio in a range of 1-5, but deep holes with a high aspect ratio greater than 5 are difficult to fill, and also cause certain damage to the surface of a wafer to be coated, and ultrasonic-assisted thin film deposition in the prior art is limited to a pure liquid deposition source.
Aiming at the problems in the prior art, the inventor of the application provides a semiconductor device which is especially suitable for filling a deep hole with a high depth-to-width ratio and performs film deposition by using megasonic assistance through long-term research and a large number of experiments based on working experience accumulated in the industry for decades. Megasonic assistance is developed by ultrasonic assistance, the transmission of the megasonic assistance and the ultrasonic assistance in a solid body is not essentially different, only the frequency is different, and the megasonic assistance not only preserves the advantages of ultrasonic assistance but also overcomes the defects of the megasonic assistance due to the difference of the frequency. The main principle of megasonic wave assistance is that piezoelectric ceramic crystals are excited by high-frequency alternating current to generate vibration, the vibration generates 850kHz high-energy sonic waves, the high-energy sonic waves are transmitted to a medium needing auxiliary treatment through a megasonic transmission layer, liquid or near-liquid fluid substances on the surface of the medium do accelerated motion under the pushing of the sonic waves, and the maximum instantaneous speed can reach 30 cm/s. Because the frequency is very high, the acoustic wave will not generate cavitation effect in the liquid substance, and bubbles like ultrasonic wave assistance can not be formed during the auxiliary treatment, compared with ultrasonic wave assistance, megasonic wave assistance has very little damage to the surface of the medium to be treated, can assist to fill TSV deep holes with the high aspect ratio more than 5, and plays a role in ultrasonic wave assistance.
Specifically, as shown in fig. 1 to 4, the invention provides a megasonic-assisted thin film deposition apparatus for filling a deep hole with a high aspect ratio, which is used for filling a deep hole with an aspect ratio greater than 5, and includes a cavity 11, a base 12, a support shaft 13, a megasonic transducer 14, a megasonic transmission layer 15, and a megasonic isolation seal ring 16; the base 12, the megasonic transducer 14 and the megasonic transmitting layer 15 are all located in the cavity 11, and the center points of the base 12, the megasonic transducer 14 and the megasonic transmitting layer 15 are located on the same vertical line, so as to ensure that megasonic waves can be uniformly transmitted to the megasonic transmitting layer 15 and finally to the wafer 19; the megasonic transducer 14 is located within the base 12 for converting input electrical power into megasonic waves; the megasonic transmitting layer 15 is attached to the upper surface of the megasonic transducer 14, a wafer to be deposited is positioned above the megasonic transmitting layer 15, and the megasonic transmitting layer 15 is used for transmitting megasonic waves converted by the megasonic transducer 14 to the wafer to be deposited; the supporting shaft 13 is connected with the base 12 and extends from the inside of the cavity 11 to the outside of the cavity 11 (so that the cavity 11 has a through hole corresponding to the position where the supporting shaft 13 passes through for the supporting shaft 13 to pass through); the megasonic wave isolation sealing ring 16 is located between the cavity 11 and the supporting shaft 13 (the megasonic wave isolation sealing ring 16 is sleeved on the circumferential direction of the supporting shaft 13 and is in close contact with the cavity 11), so that the cavity 11 is sealed, the megasonic wave is prevented from being transmitted to the cavity 11, and the wafer 19 is prevented from being polluted because microparticles attached to the inner wall of the cavity 11 fall off and are deposited on the wafer 19 under the action of the megasonic wave. The invention is improved in design, utilizes megasonic to assist the film deposition, because the megasonic frequency is very high, the sonic will not generate cavitation effect in the liquid substance, the bubble like ultrasonic wave assistance can not be formed during the auxiliary treatment, the high-frequency megasonic energy is utilized to make the deposition source, including but not limited to the liquid substance continuously impact the surface of the wafer to be deposited in the form of accelerated fluid, so that the film deposited on the surface of the wafer can be more uniformly filled to the side wall and the bottom of the micron and submicron deep hole structure with high depth-to-width ratio (the depth-to-width ratio is more than 5) to form a continuous film layer on the side wall, thereby achieving the effect of uniformly filling TSV on the surface of the wafer 19, and also avoiding the damage to the surface of the wafer; the filling of the deep hole structure can be greatly improved, and the filling rate can be improved by more than 30%, so that the reliability of the TSV and the deep hole device can be effectively improved, the filling efficiency can be improved, and the production cost can be greatly reduced. The deposition source can be any one of solid, gas and liquid, and after particles of the deposition source enter the cavity and reach the surface of the wafer, the diffusion capacity of the particles is enhanced under the high-frequency action of megasonic waves, so that the particles can more quickly and smoothly enter the deep hole to be filled and gradually complete deep hole filling.
The megasonic transducer 14 may be any commercially available device capable of converting electric power into megasonic waves, such as a magnetic transducer made of magnetostrictive material, a piezoelectric transducer made of one or more piezoelectric ceramics such as lead zirconate titanate, lithium niobate, lithium titanate, and aluminum nitride, or a combination of the two transducers. For example, the support shaft 13 may extend all the way up through the megasonic transducer 14, or the megasonic transducer 14 may be sleeved on the support shaft 13. Of course, in order to further prevent the megasonic waves from being transmitted to the cavity 11 through the supporting shaft 13, an auxiliary isolation sealing ring may be disposed between the megasonic transducer 14 and the supporting shaft 13 to reduce the megasonic waves from being transmitted to the supporting shaft 13 while tightly fixing the two. The megasonic transducer 14 may have a square or circular-like structure, and it is important that its circumference is uniformly layered around the support shaft 13 to generate uniformly distributed megasonic waves, which are uniformly transmitted to the megasonic wave transmitting layer 15.
In one example, the megasonic transmitting layer 15 is an electrostatic chuck, and the wafer to be deposited is attached to the top surface of the electrostatic chuck (the base 12 acts as a frame, the megasonic transducer 14 is located in the frame, and the electrostatic chuck covers the surface of the megasonic transducer 14). The electrostatic chuck typically has a plurality of electrostatic chucking holes uniformly distributed therein, into which a liquid (e.g., liquid nitrogen or helium) or gaseous medium (e.g., nitrogen, helium or argon) may be introduced during the thin film deposition process to uniformly transfer megasonic energy through the medium to various portions of the wafer 19 positioned on the electrostatic chuck. The scheme can fully play the high-energy mixing effect of the megasonic process and improve the uniformity of the in-chip process, thereby effectively improving the filling effect of the deep hole structures of micron and submicron order on the surface of the wafer 19.
In another example, as shown in fig. 1 to 3, the megasonic transmitting layer 15 includes a circular substrate 151 and a protective layer 152 on the surface of the circular substrate 151, a wafer to be deposited is attached on the upper surface of the protective layer 152, the supporting shaft 13 passes through the megasonic transducer 14 and the circular substrate 151 and may extend to be connected with the protective layer 152 (even the upper surface of the supporting shaft 13 may be flush with the upper surface of the protective layer 152), and the circular substrate 151 and the megasonic transducer 14 may be fixed by fixing pins 17 (so that fixing holes may be correspondingly formed on the circular substrate 151 and the megasonic transducer 14). The megasonic wave transmitting layer 15 in this example has no electrostatic chuck structure but is only a common circular substrate 151 with a good megasonic wave transmitting function for supporting the wafer 19, the size of the circular substrate 151 is matched with the size of the wafer 19 (the size may be the same according to different requirements, or the size of the circular substrate 151 may be slightly smaller than the size of the wafer 19, or may be slightly larger than the size of the wafer 19), for example, it may be an aluminum metal plate, a ceramic plate, or other material with relatively high hardness, and the material 152 of the protective layer on the surface thereof may be determined according to the material of the thin film to be deposited, for example, it may be aluminum nitride or aluminum fluoride. The protection layer 152 can be internally provided with a heating device, the wafer can be uniformly heated when needed, when the protection layer 152 heats the wafer, the circular substrate 151 can play a heat insulation role so as to reduce adverse effects of heat emitted by the protection layer 151 on the megasonic transducer 14, and the service life of the megasonic transducer can be prolonged. The surface area of the protective layer 152 may be the same as the surface area of the wafer 19 to be deposited or slightly smaller than the surface area of the wafer 19. The circular substrate 151 is embedded in the base 12, and the upper surface of the circular substrate 151 may be flush with the upper surface of the base 12, and at this time, the protective layer 152 covers the circular substrate 151 and also covers the base 12. The passivation layer 152 may have a plurality of air guiding grooves 1521 formed thereon, for example, 3 air guiding grooves 1521, and 3 air guiding grooves 1521 may extend outward from a central point of the passivation layer 152 along a radial direction of the passivation layer 152 and be uniformly distributed on the passivation layer 152. The gas channel 1521 is configured to be filled with a liquid (e.g., liquid nitrogen or helium) or gaseous medium (e.g., nitrogen, helium or argon) as needed to uniformly transfer megasonic energy through the medium to various portions of the wafer 19 on the protective layer.
In one example, a boss 1511 is disposed on a circumferential edge of the circular base plate 151, and a sealing ring 153 is disposed on the boss 1511. The edge of the lower protection layer 152 is correspondingly located above the sealing ring 153, and the wafer 19 is placed on the protection layer 152, so that the edge of the wafer 19 is correspondingly located above the sealing ring 153, the megasonic energy received by the edge of the wafer 19 is slightly smaller than that received by the inner side of the wafer, the edge of the wafer 19 can be better attached to the surface of the protection layer 152, the wafer 19 is prevented from shifting, and meanwhile, the excessive deposition of a thin film on the edge of the wafer 19 is avoided.
In one example, as shown in fig. 3, a plurality of recesses 121, such as 3, 4 or more, are uniformly distributed on the periphery of the susceptor 12 and recessed toward the inner side of the susceptor 12, the plurality of recesses 121 vertically penetrate through the susceptor 12 (for example, if the protective layer 152 has an outer edge portion, the outer edge of the protective layer 152 may also be correspondingly provided with a recess according to the structure of the protective layer 152), the megasonic assisted thin film deposition apparatus further includes a plurality of correction pillars 18, the plurality of correction pillars 18 are correspondingly provided in the recesses 121 one by one, and the correction pillars 18 are parallel to the support shaft 13, and the correction pillars 18 may be used to help correct the position of the wafer 19. In a further example, as shown in FIG. 4, the top surfaces of the posts 18 have angled guide surfaces, and when the wafer 19 is supported by the posts 18, the edge of the wafer 19 contacts the angled guide surfaces of the posts 18. The alignment posts 18 may be metal posts, but the surfaces of the alignment posts contacting the wafer are coated with a non-metal coating, such as a ceramic coating, to prevent the wafer from being damaged due to metal contamination and thermal stress of the wafer. Specifically, during the film deposition process, the upper surface of the alignment post 18 is flush with the upper surface of the electrostatic chuck (or the upper surface of the passivation layer 152, depending on the specific structure of the megasonic transmitting layer 15), the wafer 19 is placed on the megasonic transmitting layer 15, the edge of the wafer 19 may be partially located on the surface of the alignment post 18, when the position of the wafer 19 needs to be adjusted, the support shaft 13 may be lowered with the susceptor 12 as a whole, the wafer 19 is left in place due to the support of the alignment post 18, the inclined guide surface of the alignment post 18 contacts with the side surface of the wafer 19, the plurality of alignment posts 18 hold the wafer 19 together, the position of the wafer 19 may be adjusted by using a robot arm, such as rotating the wafer 19, when the predetermined angle is adjusted, the support shaft 13 is raised with the susceptor 12, the wafer 19 returns to the upper side of the ultrasonic transmitting layer 15 (the surface of the megasonic chuck 152 or the electrostatic chuck), and then deep hole filling is continued. The flexibility in adjusting the position of the wafer 19 as desired helps to improve deposition uniformity. The position of the wafer 19 is adjusted through the correcting column 18, and the supporting shaft 13 does not need to rotate to drive the base 12 to rotate, so that the position of the wafer 19 can be adjusted, and the problems that the source line is easy to wind and/or the equipment tightness is reduced and the like in the rotating process of the supporting shaft 13 can be effectively avoided. When the wafer 19 needs to be placed and/or unloaded, the wafer 19 does not need to be directly placed on the protective layer 152 or the electrostatic chuck by the mechanical arm through the correction column 18, so that the surface damage of the protective layer 152 or the electrostatic chuck caused by the direct contact between the mechanical arm and the electrostatic chuck or the protective layer 152 is avoided, and meanwhile, the risk of fragments can be effectively reduced.
The material of the megasonic isolation sealing ring 16 is preferably anticorrosive rubber capable of isolating ultrasonic waves and megasonic waves, which has good corrosion resistance, wear resistance and sealing property, and simultaneously has excellent ultrasonic wave and megasonic wave absorption performance, and is particularly suitable for being connected between the cavity 11 and the supporting shaft 13 in the invention, so that the megasonic waves are prevented from being transmitted to the cavity 11 through the supporting shaft 13 while the cavity 11 is sealed. Of course, in other examples, other flexible materials such as silica gel vibration damping materials, asphalt, sound absorbing cotton, etc. capable of isolating or reducing ultrasound or megasonic sound, or combinations of the above materials, can be applied to the present invention without being limited thereto. In order to optimize the sealing and megasonic isolation of the megasonic isolation seal ring 16, the structure thereof needs to be carefully configured. In this embodiment, as an example, the megasonic isolation seal ring 16 is provided with a buffer structure along its radial direction, the buffer structure is located between the cavity 11 and the support shaft 13, and the buffer structure may be a wave structure with staggered upper and lower surfaces, or of course, the upper and lower surfaces may be flat surfaces, and the middle of the buffer structure contains a fine honeycomb structure. Through setting up buffer structure, the megasonic absorbs the release and can not transmit to cavity 11 by buffer structure in the process of transmitting to megasonic isolated seal ring 16 through back shaft 13, effectively avoids causing cavity 11 to vibrate because of megasonic, avoids the particle of cavity 11 internal surface to drop and causes wafer 19 to pollute. In a further example, to better isolate the megasonic waves, the supporting shaft 13 may be provided with a groove (not shown) along the axial direction, the groove does not penetrate through the supporting shaft 13, and the supporting shaft 13 is further provided with a source wire, such as a heating wire, an air supply wire, etc., and the megasonic wave isolating sealing ring 16 is partially embedded in the groove. Another advantage of providing the groove is that, because the megasonic isolation sealing ring is partially embedded in the groove, when the support shaft ascends and descends, the megasonic isolation sealing ring is also driven to locally ascend and descend without falling off from the support shaft, thereby ensuring the sealing performance of the cavity in the process of ascending and descending the support shaft (the megasonic isolation sealing ring has certain elasticity). Besides the megasonic wave isolation sealing rings 16 are arranged on the contact surfaces of the supporting shaft 13 and the cavity 11, the megasonic wave isolation sealing rings 16 may be arranged at other positions of the supporting shaft 13, that is, a plurality of megasonic wave isolation sealing rings may be provided, so as to further prevent megasonic waves from being transmitted to the cavity 11 through the supporting shaft 13.
The power type of the megasonic transducer 14 can be selected as desired, for example, based on the particle size of the deposition source and/or the aspect ratio of the deep hole to be filled. In a preferred example, the megasonic transducer 14 emits megasonic waves having a wavelength of 1 μm and a frequency of 850 kHZ. The megasonic transducer 14 in this configuration can meet most of the thin film deposition needs.
The megasonic-assisted thin film deposition apparatus is preferably a vapor deposition apparatus, such as a CVD apparatus or a PVD apparatus. If the apparatus is a CVD apparatus, a shower head (showerhead) for introducing a deposition source into the chamber is further disposed on the upper portion of the chamber, and if the apparatus is a PVD apparatus, a target bearing plate for fixing a target and a radio frequency power supply for bombarding the target to generate sputtered particles are further disposed on the upper portion of the chamber. The invention is characterized in that the megasonic transducer is combined on the base and is transmitted to the wafer through the megasonic transmitting layer, and the megasonic is prevented from being transmitted to the cavity while the cavity is sealed by the megasonic isolating sealing ring. The deposition source applicable to the invention can be in a gas state, a liquid state or a solid state, and the high-depth-to-width ratio deep hole can be quickly and uniformly filled by means of the high-frequency energy of the megasonic wave.
Taking the PVD deposition process of the thick aluminum deposition source by adopting the equipment of the invention as an example, as known from a high-temperature reflow process, an aluminum seed layer is deposited on the surface of a wafer under a low-temperature condition, then a thick aluminum layer is deposited at a medium-high power under a high-temperature condition, the aluminum is driven to flow from the surface of the wafer to a deep hole by the solid diffusion property of the aluminum under the high-temperature condition, the deep hole filling can be accelerated to form a uniform aluminum film under the assistance of megasonic waves while the high-temperature deposition is carried out, and the megasonic waves can be efficiently transmitted in solid and liquid substances. In the sputtering process, a megasonic transducer emits high-energy megasonic with the wavelength of 1 μm and the frequency of 850kHz, the megasonic with extremely short wavelength can effectively improve the fluidity and the diffusivity of liquid substances in a TSV structure with the pore diameter of micron and submicron order, and the megasonic energy is transmitted to an aluminum film flowing with the solid diffusion property on the surface of a wafer through a megasonic transmission layer. The aluminum molecules flowing in the solid diffusion property do accelerated motion under the pushing of megasonic waves, the maximum instantaneous speed can reach 30cm/s, the stirring and diffusion of aluminum atoms can be effectively promoted, and the filling effect of aluminum in the deep hole structure on the surface of the wafer can be greatly improved.
Of course, the above process is only exemplary, and the present invention is not limited to the aluminum filling for deep holes, but can also be used for filling other metal materials. The invention can be used for filling deep holes with high aspect ratio, can also be used for conventional film deposition and filling of common contact holes and metal interconnection holes, and has particularly outstanding advantages when being used for filling deep holes with high aspect ratio.
The invention further provides a megasonic-assisted thin film deposition method, which can be performed based on the megasonic-assisted thin film deposition apparatus described in any of the above schemes, and can also be performed according to other apparatuses, so that reference is also made to the foregoing for the description of the megasonic-assisted thin film deposition apparatus, and details are not repeated for the sake of brevity. According to the megasonic-assisted film deposition method, in the film deposition process, megasonic energy is uniformly transmitted to a wafer to be deposited so as to assist in completing deep hole filling on the wafer, for example, deep hole filling with the depth-to-width ratio larger than 5. The invention can effectively improve the deep hole filling uniformity, thereby being beneficial to improving the reliability of the device.
In one example, the megasonic-assisted thin film deposition method further comprises supplying an inert gas to the surface of the wafer during thin film deposition to uniformly transfer megasonic energy to the wafer to be deposited through the inert gas to assist in completing deep hole filling on the wafer.
By way of example, the filler for the deep hole includes, but is not limited to, aluminum.
In summary, the present invention provides a megasonic-assisted thin film deposition apparatus and method for filling deep holes with a high aspect ratio, which is used for filling deep holes with an aspect ratio greater than 5. The equipment comprises a cavity, a base, a supporting shaft, a megasonic transducer, a megasonic transmitting layer and a megasonic isolated sealing ring; the base, the megasonic transducer and the megasonic transmitting layer are all positioned in the cavity, and the central points of the base, the megasonic transducer and the megasonic transmitting layer are positioned on the same vertical line; the megasonic transducer is positioned in the base, the megasonic transmitting layer is attached to the upper surface of the megasonic transducer, and the wafer to be deposited is positioned above the megasonic transmitting layer; the supporting shaft is connected with the base and extends from the inside of the cavity to the outside of the cavity; the megasonic wave isolation sealing ring is positioned between the cavity and the supporting shaft, so that the megasonic waves are prevented from being transmitted to the cavity while the cavity is sealed. According to the improved design, the megasonic wave is utilized to assist the film deposition, the high-frequency sonic energy is utilized to enable the deposition source, including but not limited to liquid substances, to continuously impact the surface of the wafer to be deposited in an accelerated liquid form, so that the film deposited on the surface of the wafer can be more uniformly filled on the side wall and the bottom of the micron and submicron deep hole structure with a high depth-to-width ratio to form a continuous film layer on the side wall, the effect of uniformly filling the TSV deep hole on the surface of the wafer is achieved, the damage to the surface of the wafer can be avoided, the filling of the deep hole structure can be greatly improved, the filling rate can be improved by more than 30%, the reliability of the TSV through hole with the high depth-to-width ratio (more than 5) and the deep hole device can be effectively improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. Megasonic-assisted thin film deposition apparatus for filling high aspect ratio deep holes, for filling deep holes having an aspect ratio greater than 5, comprising: the device comprises a cavity, a base, a supporting shaft, a megasonic transducer, a megasonic transmitting layer and a megasonic isolating sealing ring; the base, the megasonic transducer and the megasonic transmitting layer are all positioned in the cavity, and the central points of the base, the megasonic transducer and the megasonic transmitting layer are positioned on the same vertical line; the megasonic transducer is positioned in the base, the megasonic transmitting layer is attached to the upper surface of the megasonic transducer, and the wafer to be deposited is positioned above the megasonic transmitting layer; the supporting shaft is connected with the base and extends from the inside of the cavity to the outside of the cavity; the megasonic wave isolation sealing ring is positioned between the cavity and the supporting shaft, so that the megasonic waves are prevented from being transmitted to the cavity while the cavity is sealed.
2. The megasonic-assisted thin film deposition apparatus of claim 1, wherein: the megasonic transducer comprises one or two of a magnetic transducer and a piezoelectric transducer.
3. The megasonic-assisted thin film deposition apparatus of claim 1, wherein: the megasonic wave transmission layer comprises an electrostatic chuck, a wafer to be deposited is attached to the upper surface of the electrostatic chuck, and the electrostatic chuck is provided with an electrostatic adsorption hole.
4. The megasonic-assisted thin film deposition apparatus of claim 1, wherein: the megasonic wave transmission layer comprises a circular substrate and a protective layer positioned on the surface of the circular substrate, a wafer to be deposited is attached to the upper surface of the protective layer, and the support shaft penetrates through the megasonic transducer and the circular substrate.
5. The megasonic-assisted thin film deposition apparatus of claim 4, wherein: the circumference edge of circular base plate is provided with the boss, be provided with the sealing washer on the boss.
6. The megasonic-assisted thin film deposition apparatus of claim 1, wherein: the material of the megasonic wave isolation sealing ring comprises one or more of anticorrosive rubber, silica gel, asphalt and sound-absorbing cotton.
7. The megasonic-assisted thin film deposition apparatus of claim 1, wherein: the megasonic-assisted thin film deposition apparatus includes one of a CVD apparatus and a PVD apparatus.
8. The megasonic-assisted thin film deposition apparatus of any one of claims 1-7, wherein: a plurality of notches which are recessed towards the inner side of the base are uniformly distributed on the periphery of the base, and the notches penetrate through the base from top to bottom; the megasonic-assisted thin film deposition equipment further comprises a plurality of correction columns, the correction columns are arranged in the notches in a one-to-one correspondence mode, the correction columns are parallel to the supporting shaft, the top surfaces of the correction columns are provided with inclined guide surfaces, and when a wafer is supported by the correction columns, the edges of the wafer are in contact with the inclined guide surfaces.
9. The megasonic-assisted film deposition method is characterized in that megasonic energy is uniformly transmitted to a wafer to be deposited in the film deposition process so as to assist in completing deep hole filling on the wafer.
10. The megasonic-assisted film deposition method of claim 9 further comprising supplying an inert gas to the wafer surface during film deposition to uniformly transfer megasonic energy through the inert gas to the wafer to be deposited to assist in completing deep hole filling on the wafer.
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