CN106290983A - A kind of acceleration sensor chip based on amorphous carbon film - Google Patents
A kind of acceleration sensor chip based on amorphous carbon film Download PDFInfo
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- CN106290983A CN106290983A CN201610606289.0A CN201610606289A CN106290983A CN 106290983 A CN106290983 A CN 106290983A CN 201610606289 A CN201610606289 A CN 201610606289A CN 106290983 A CN106290983 A CN 106290983A
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- amorphous carbon
- siliceous
- sensitive structure
- resistance
- membrane resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
Abstract
A kind of acceleration sensor chip based on amorphous carbon film, including siliceous sensitive structure, the back side of siliceous sensitive structure is bonded with boron glass, siliceous sensitive structure includes mass and the cantilever beam being connected with mass, siliceous sensitive structure use physical vapour deposition (PVD) or chemical gaseous phase depositing process are coated with four amorphous carbon-film resistance, wherein the first amorphous carbon membrane resistance is positioned on the cantilever beam of siliceous sensitive structure, and near frame one end；Second, third, the 4th amorphous carbon membrane resistance be positioned at the frame of siliceous sensitive structure, four amorphous carbon-film resistance connect into favour stone half-bridge testing circuit, and connected by plain conductor and pad, the amorphous carbon membrane resistance used due to the present invention has low-friction coefficient, corrosion-resistant, wear-resisting good characteristic such as grade, thoroughly solve traditional MEMS silicon micro-sensor and measure the restricting relation between sensitivity and natural frequency, make sensor have the feature such as high natural frequency and high measurement sensitivity concurrently.
Description
Technical field
The present invention relates to MEMS acceleration sensor chip technical field, based on amorphous carbon film add particularly to a kind of
Velocity sensor chip.
Background technology
Demand along with the development of MEMS (MEMS) technology and the practical application area such as industry, military affairs
Change, there is different performance and sensitivity principle acceleration transducer and progress into the visual field of people.Quick according to sense accelerations
Sense mechanism is different, and acceleration transducer can be divided into condenser type, pressure resistance type, piezoelectric type, resonant mode and thermal conductivity etc..Owing to adopting
With MEMS technology and IC integrated technique, there is volume acceleration transducer little, lightweight feature and can be placed in narrow and small
In space, thus occur in the application scenario that some conventional sensors cannot use, such as machine tool chief axis vibration monitoring, intelligence
Pen, virtual reality, 3D mouse and sports equipment etc..
Currently for the research of MEMS acceleration transducer, many carry out innovative design on its sensitive structure, in succession go out
Show MEMS acceleration transducer based on sensitive structures such as cantilever beam-mass, rood beam, doube bridge and compound many beams.Though
The most above-mentioned sensitive structure improves sensor performance to a certain extent, but there is problems in that 1. pass due to acceleration
The sensitivity of sensor sensitive structure and natural frequency are a pair parameters of mutually constraint, and this contradictory relation cannot be by thoroughly
Eliminate；The most traditional MEMS sensor all uses the mode of ion implanting to form varistor on a silicon substrate, is typically necessary
2-3 step just can complete the making of resistance, and processing technology is complex；3. the characteristics such as varistor does not possess wear-resisting, corrosion-resistant, limit
Make its application under some adverse circumstances, reduce the life-span of sensor.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, it is an object of the invention to provide a kind of based on amorphous carbon film add
Velocity sensor chip, thoroughly solves traditional MEMS silicon micro-sensor and measures the restricting relation between sensitivity and natural frequency,
Making sensor have the feature such as high natural frequency and high measurement sensitivity concurrently, the amorphous carbon membrane resistance of employing has low friction system
Several, corrosion-resistant, the wear-resisting good characteristic that waits, the application under applicable adverse circumstances, there is the biggest market efficiency and economic worth.
To achieve these goals, the technical solution used in the present invention is:
A kind of acceleration sensor chip based on amorphous carbon film, including siliceous sensitive structure 1, siliceous sensitive structure 1
The back side be bonded with the front of boron glass 2, be provided with cavity 3, silicon between the back side and the front of boron glass 2 of siliceous sensitive structure 1
Matter sensitive structure 1 includes mass 5 and the cantilever beam 6 being connected with mass 5, uses physics gas on siliceous sensitive structure 1
Deposition or chemical gaseous phase depositing process are coated with four amorphous carbon-films resistance 4-1,4-2,4-3,4-4, wherein the first amorphous carbon mutually
Membrane resistance 4-1 is positioned on the cantilever beam 6 of siliceous sensitive structure 1, and near frame one end；Second amorphous carbon membrane resistance 4-2,
Three amorphous carbon membrane resistances 4-3 and the 4th amorphous carbon membrane resistance 4-4 are positioned at the frame of siliceous sensitive structure 1, and four non-
Brilliant fixed carbon resister 4-1,4-2,4-3,4-4 connect into favour stone half-bridge testing circuit, and are connected by plain conductor 7 and pad 8,
Siliceous sensitive structure 1, boron glass 2, amorphous carbon membrane resistance, plain conductor 7 and pad 8 constitute based on amorphous carbon film
Acceleration sensor chip.
Described amorphous carbon membrane resistance uses magnetron sputtering and chemical gaseous phase depositing process to prepare, its bias point
Wei-300V～300V and-150V～-750V.
The working clearance of 20-40 μm it is reserved with between mass 5 and the boron glass 2 of described siliceous sensitive structure 1.
Replace traditional pressure sensitive resistance as favour stone owing to present invention employs the amorphous carbon membrane resistance of high piezoresistance coefficient
The bridge resistance of electric bridge.Sensor is made to have the following characteristics that 1. high measurement sensitivity, owing to amorphous carbon membrane resistance has pole
High piezoresistance coefficient (120-1200) so that varistor is in the case of by identical ess-strain, it is possible to obtain bigger
Resistance change.2 response frequencies are high, carry out cantilever beam structure dimensionally-optimised and select, can be not affect sensor sensitive
The natural frequency of sensor is promoted in the case of degree.The most wear-resisting, corrosion-resistant.Owing to amorphous carbon film has low-friction coefficient, resistance to
The features such as mill, are often used as the coating material of space shuttle, introduce this resistance and sensor can be made to have the longer life-span.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention.
Fig. 2 is the Section A-A figure of Fig. 1.
Fig. 3 is the fundamental diagram of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described in more detail.
See figures.1.and.2, a kind of acceleration sensor chip based on amorphous carbon film, including siliceous sensitive structure 1,
The back side of siliceous sensitive structure 1 is bonded with the front of boron glass 2, and leaves bonding surplus, the back side of siliceous sensitive structure 1 and boron
Being provided with cavity 3 between the front of glass 2, siliceous sensitive structure 1 includes mass 5 and the cantilever beam 6 being connected with mass 5,
Siliceous sensitive structure 1 use physical vapour deposition (PVD) or chemical gaseous phase depositing process are coated with four amorphous carbon-films resistance 4-1,4-
2,4-3,4-4, wherein the first amorphous carbon membrane resistance 4-1 is positioned on the cantilever beam 6 of siliceous sensitive structure 1, and near frame one
End；Second amorphous carbon membrane resistance 4-2, the 3rd amorphous carbon membrane resistance 4-3 and the 4th amorphous carbon membrane resistance 4-4 are positioned at silicon
At the frame of matter sensitive structure 1, the amorphous carbon membrane resistance subjected to stress strain so arranged is big, and resistance variations is obvious, suitable
Together in developing MEMS acceleration sensor chip based on amorphous carbon film, four amorphous carbon-films resistance 4-1,4-2,4-3,4-4
Connect into favour stone half-bridge testing circuit, and logical plain conductor 7 and pad 8 connect, siliceous sensitive structure 1, boron glass 2, amorphous
State fixed carbon resister, plain conductor 7 and pad 8 constitute acceleration sensor chip based on amorphous carbon film.
Described amorphous carbon membrane resistance uses magnetron sputtering and chemical gaseous phase depositing process to prepare, its bias point
Wei-300V～300V and-150V～-750V.
The working clearance of 20-40 μm it is reserved with, to protect between mass 5 and the boron glass 2 of described siliceous sensitive structure 1
Card mass 5 can be the most unsettled when normal operation of sensor, it is provided that suitably damping space and anti-overload ability.
The operation principle of the present invention is:
With reference to Fig. 3, utilize the piezoresistive effect of amorphous carbon film, when amorphous carbon membrane resistance 4-1,4-2,4-3,4-4 are in
Time under certain stress effect, due to the change of carrier mobility, its resistivity changes, the change of its resistance with its suffered by
Proportionate relationship between stress is:
K therein is the equivalent piezoresistance coefficient of amorphous carbon film, and piezoresistance coefficient is used to characterize piezoresistive effect power, quilt
It is defined as change relatively and the ratio of strain stress of amorphous carbon film resistivity under unit effect.
For the favour stone half-bridge testing circuit being made up of amorphous carbon film resistance, constant pressure source is used to power, when the external world adds
When speed is applied on sensor chip, its output voltage can be expressed as:
V in formula 2o、ViIt is respectively output voltage and input voltage, the R of electric bridge1It it is the first amorphous carbon membrane resistance 4-1
Resistance.R2、R3And R4For being arranged in the second amorphous carbon membrane resistance 4-2 at sensitive structure frame, the 3rd amorphous carbon film electricity
Resistance 4-3 and the resistance of the 4th amorphous carbon membrane resistance 4-3.ΔR1It it is the change in resistance amount of the first amorphous carbon membrane resistance 4-1.Warp
Cross substitution abbreviation, have an equation below:
According to Newton's law, when unsettled mass 5 is by a direction acceleration effect, it will have one and accelerate
Degree is directly proportional and inertia force in the same direction acts on mass 5, so that mass 5 produces certain displacement；Cantilever beam 6 with
Mass 5 is connected, and cantilever beam 6 will occur bending and deformation under the drive of mass 5, thus produces stress on cantilever beam 6 and answer
Become.The first amorphous carbon membrane resistance 4-1 in chip is arranged at the maximum stress of cantilever beam 6, according to piezoresistive effect formula, the
The resistance of one amorphous carbon membrane resistance 4-1 can change, and then causes bridge balance to lose efficacy, thus exports a magnitude of voltage,
Stress owing to producing on cantilever beam 6 is directly proportional to input acceleration, and the variable quantity of amorphous state fixed carbon resister and the stress of beam
Being directly proportional, the accekeration that therefore output voltage is born to it is directly proportional, and finally achieves and acceleration is changed into the signal of telecommunication
Function.In the present invention, owing to using amorphous carbon film as the varistor of sensor so that sensor has higher spirit
Sensitivity and longer service life.
Claims (3)
1. an acceleration sensor chip based on amorphous carbon film, including siliceous sensitive structure (1), siliceous sensitive structure
(1) the back side is bonded with the front of boron glass (2), is provided with between the back side and the front of boron glass (2) of siliceous sensitive structure (1)
Cavity (3), siliceous sensitive structure (1) includes mass (5) and the cantilever beam 6 being connected with mass (5), it is characterised in that:
It is coated with four amorphous carbon-film resistance (4-at siliceous sensitive structure (1) upper employing physical vapour deposition (PVD) or chemical gaseous phase depositing process
1,4-2,4-3,4-4), wherein the first amorphous carbon membrane resistance (4-1) is positioned on the cantilever beam (6) of siliceous sensitive structure (1), and
Near frame one end；Second amorphous carbon membrane resistance (4-2), the 3rd amorphous carbon membrane resistance (4-3) and the 4th amorphous carbon
Membrane resistance (4-4) is positioned at the frame of siliceous sensitive structure (1), and four amorphous carbon-film resistance (4-1,4-2,4-3,4-4) connect
Become favour stone half-bridge testing circuit, and connected by plain conductor (7) and pad (8), siliceous sensitive structure (1), boron glass
(2), amorphous carbon membrane resistance, plain conductor (7) and pad (8) constitute acceleration transducer core based on amorphous carbon film
Sheet.
A kind of acceleration sensor chip based on amorphous carbon film the most according to claim 1, it is characterised in that: described
Amorphous carbon membrane resistance use magnetron sputtering and chemical gaseous phase depositing process to prepare, its bias be respectively-300V～
300V and-150V～-750V.
A kind of acceleration sensor chip based on amorphous carbon film the most according to claim 1, it is characterised in that: described
Siliceous sensitive structure (1) mass (5) and boron glass (2) between be reserved with working clearance of 20-40 μm.
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| CN201610606289.0A CN106290983A (en) | 2016-07-28 | 2016-07-28 | A kind of acceleration sensor chip based on amorphous carbon film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108709170A (en) * | 2018-07-31 | 2018-10-26 | 江门黑氪光电科技有限公司 | A kind of LED support from strip resistance |
| CN109507451A (en) * | 2018-10-24 | 2019-03-22 | 西安交通大学 | A kind of acceleration sensor chip and its processing method based on molybdenum disulfide film |
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| CN108709170A (en) * | 2018-07-31 | 2018-10-26 | 江门黑氪光电科技有限公司 | A kind of LED support from strip resistance |
| CN109507451A (en) * | 2018-10-24 | 2019-03-22 | 西安交通大学 | A kind of acceleration sensor chip and its processing method based on molybdenum disulfide film |
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