CN101738494A - Silicon micro-acceleration sensor chip - Google Patents
Silicon micro-acceleration sensor chip Download PDFInfo
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- CN101738494A CN101738494A CN200910219464A CN200910219464A CN101738494A CN 101738494 A CN101738494 A CN 101738494A CN 200910219464 A CN200910219464 A CN 200910219464A CN 200910219464 A CN200910219464 A CN 200910219464A CN 101738494 A CN101738494 A CN 101738494A
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Abstract
The invention discloses a silicon micro-acceleration sensor chip, which comprises a central silicon mass block which is positioned in the center of a peripheral support silicon substrate; two silicon films are arranged at two ends of one side of the front of the peripheral support silicon substrate adjacent to the central silicon mass block; one surface of one silicon film and one surface of the other silicon film are connected with the peripheral support silicon substrate and the central silicon mass block, while the other surfaces are connected with a silicon cantilever; the middle of the silicon cantilever is provided with four piezoresistive strips so as to form a Wheatstone bridge; when acceleration is acted on the sensor chip, inertia force is acted on the central mass block to deform the cantilever-film structure, the resistance of the piezoresistive strips is changed under the stress action of the silicon cantilever, the Wheatstone bridge loses balance and outputs an electric signal corresponding to the external acceleration so as to measure the acceleration by the sensor chip. The silicon micro-acceleration sensor chip has the advantages of small volume, light weight, high frequency response and high sensitivity.
Description
Technical field
The invention belongs to the micromechanics electronic technology field, be specifically related to a kind of silicon micro-acceleration sensor chip.
Background technology
At present, high performance kinetic measurement has become one of important applied field of acceleration transducer with acceleration transducer, the jerk acceleration transducer of auto industry, the main shaft acceleration transducer of high-speed machine tool are all proposing very high requirement to acceleration transducer aspect sensitivity and the response frequency two.In the sensor design of this type of application, the static sensitivity of sensor and dynamic response frequency are two parameters of equal importance, all must reach certain requirement, to realize specific by the accurate measurement of measuring acceleration.The acceleration transducer of existing employing conventional cantilever beam structure can be known square being inversely proportional to of the sensitivity of acceleration transducer and range and natural frequency by the sensor sensing principle.For the acceleration transducer of those wide ranges such as tens thousand of g, because its sensitive structure rigidity is big, can reach hundreds of KHz, but the output of unit acceleration is little, sensitivity is low, can not be applied in the measurement of little acceleration; Simultaneously,,,, brought difficulty to kinetic measurement because its response frequency is low although unit acceleration output is bigger because its sensitive structure is softer for those little ranges acceleration transducer of hundred to thousands of g in full.In a word, existing acceleration transducer exists volume big, and weight is big, the shortcoming of low frequency response and muting sensitivity.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of silicon micro-acceleration sensor chip, it is little to have a volume, and weight is little, high frequency sound and highly sensitive advantage.
To achieve these goals, the technical solution used in the present invention is:
A kind of silicon micro-acceleration sensor chip, comprise peripheral support silica-based 4, support silica-based 4 the back side in the periphery and dispose glass substrate 5, the back side of peripheral support silica-based 4 is carried out bonding with glass substrate 5 and is connected, the siliceous gauge block 1 of central authorities is positioned at peripheral silica-based 4 the centre of supporting, the two ends of supporting the adjacent one side of silica-based 4 front and central siliceous gauge block 1 in the periphery dispose two silicon fimls 3, the one side of two silicon fimls 3 and periphery are supported silica-based 4 and are linked to each other with central siliceous gauge block 1, another side is connected with silicon cantilever 2, intermediate configurations on the silicon cantilever 2 has 6, four pressure drag bars of four pressure drag bars 6 to constitute Wheatstone bridge.
There is the gap of 5-10 μ m so that central mass 1 is unsettled between described central mass 1 and the peripheral support silica-based 4, the weight of the siliceous gauge block 1 of beam diaphragm structure together support central authorities that described silicon cantilever 2 and silicon fiml 3 are formed, the thickness of described silicon fiml 3 is less than the thickness of silicon cantilever 2.
Described silicon fiml 3, the axis of silicon cantilever 2 and central siliceous gauge block 1 three parts overlaps.
Described silicon cantilever 2 has adopted (100) crystal face silicon.
Described four pressure drag bars 6 are arranged along [110] and [110] crystal orientation.
Described silicon micro-acceleration sensor chip adopts the SOI material of twin polishing.
Principle of work of the present invention is: four the pressure drag bars 6 that are distributed on the silicon cantilever 2 constitute Wheatstone bridge, form the acceleration analysis circuit, when acceleration acts on sensor chip, according to Newton second law, to there be inertial force to act on central mass 1, and then make beam diaphragm structure deform, pressure drag bar 6 its resistance under the stress of silicon cantilever 2 changes, the Wheatstone bridge out of trim that pressure drag bar 6 is formed, export one and the corresponding electric signal of extraneous acceleration, thereby realize the measurement of sensor chip acceleration.
Because the present invention adopts the membrane-bound structure of beam as sensitive element, integrate acceleration perception and metering circuit, adopt the SOI material simultaneously, so it is little to have a volume, weight is little, high frequency sound and highly sensitive advantage.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is a schematic cross-section of the present invention.
Fig. 3 is the distribution schematic diagram of pressure drag bar 6 on silicon cantilever 2.
Fig. 4 is the Wheatstone bridge synoptic diagram that pressure drag bar 6 constitutes.
Embodiment
Below in conjunction with accompanying drawing structure of the present invention and principle of work are described in detail.
Referring to Fig. 1,2,3,4, a kind of silicon micro-acceleration sensor chip, comprise peripheral support silica-based 4, support silica-based 4 the back side in the periphery and dispose glass substrate 5, the back side of peripheral support silica-based 4 is carried out bonding with glass substrate 5 and is connected, the siliceous gauge block 1 of central authorities is positioned at peripheral silica-based 4 the centre of supporting, the two ends of supporting the adjacent one side of silica-based 4 front and central siliceous gauge block 1 in the periphery dispose two silicon fimls 3, the one side of two silicon fimls 3 and periphery are supported silica-based 4 and are linked to each other with central siliceous gauge block 1, another side is connected with silicon cantilever 2, form the siliceous gauge block 1 of beam diaphragm structure together support central authorities, form the acceleration sensitive structure, intermediate configurations on the silicon cantilever 2 has four pressure drag bars 6, four pressure drag bars 6 constitute Wheatstone bridge, the metering circuit that the acceleration input that sensor chip is sensed is formed by four pressure drag bars 6 finally is converted into electric signal, finishes induction and measurement to acceleration.
There is the gap of 5-10 μ m so that central mass 1 is unsettled between described central mass 1 and the peripheral support silica-based 4, can do the certain displacement of time spent generation at extraneous acceleration, thereby sense accelerations, the weight of the siliceous gauge block 1 of beam diaphragm structure together support central authorities that described silicon cantilever 2 and silicon fiml 3 are formed, the thickness of described silicon fiml 3 is less than the thickness of silicon cantilever 2, utilization is superimposed with the silicon fiml 3 that corrodes from the back side from the silicon cantilever 2 that front etch forms, make stress concentrate effect obviously, simultaneously the stiffness coefficient of structure and its thickness cube is directly proportional, therefore the silicon in silicon cantilever 2 zones than the big situation of the thickness in silicon fiml 3 zones under, the stiffness coefficient in silicon cantilever 2 zones increases, thereby has promoted the natural frequency of entire system.
Described silicon fiml 3, the axis of silicon cantilever 2 and central siliceous gauge block 1 three parts overlaps.
Described silicon cantilever 2 has adopted (100) crystal face silicon.
Described four pressure drag bars 6 are arranged along [110] and [110] crystal orientation.
Described silicon micro-acceleration sensor chip adopts the SOI material of twin polishing.
Be respectively resistance R 1, R2, R3 and R4 referring to Fig. 3,4, four pressure drag bars 6, on silicon cantilever 2, resistance R 1 is arranged in parallel with resistance R 3, and resistance R 2 is arranged in parallel with resistance R 4, and four pressure drag bars 6 constitute Wheatstone bridge.
Principle of work of the present invention is: when acceleration acted on sensor chip, central siliceous gauge block 1 was as the responsive mass of sensor acceleration.According to Newton second law (F=ma), when acceleration acts on central siliceous gauge block 1, because the effect of inertial force, the siliceous gauge block 1 of central authorities can produce certain displacement, and then making silicon cantilever 2 part generation deformation in the beam diaphragm structure, the stress that this deformation produced causes being distributed in the resistance change of the pressure drag bar 6 on the silicon cantilever 2.This change in resistance changes electric signal output into by Wheatstone bridge, thereby realizes the acceleration-voltage signal conversion of sensor chip, finishes the measurement to quickening.
The variable quantity of pressure drag bar 6 resistances among the present invention on the silicon cantilever 2 calculates by the correlation formula of piezoresistive effect, and piezoresistive effect is meant when semiconductor material is subjected to stress, since the variation of carrier mobility, the phenomenon that its resistivity is changed.When the pressure drag bar is in certain stress following time, the proportionate relationship formula between its change in resistance and its suffered stress is as follows:
In the formula: R---the initial resistance of pressure drag bar;
π
l---be the horizontal piezoresistance coefficient of pressure drag bar;
π
τ---the vertical piezoresistance coefficient of pressure drag bar;
σ
i---the normal stress that the pressure drag bar is subjected to;
τ
i---the shear stress that the pressure drag bar is subjected to.
Therefore silicon cantilever 2 is made the change in resistance that stress that the time spent produces will make the pressure drag bar 6 on it at extraneous acceleration, by Wheatstone bridge is electric signal output again with this change transitions, then realize induction and measurement to acceleration, piezoresistive effect has anisotropic feature, pass through electric current along different direction stress applications or along different directions, the change in resistance of material is all inequality, in order under same acceleration effect, to obtain bigger output electric signal, silicon cantilever 2 among the present invention is selected (100) crystal face silicon chip, utilize (100) crystal face silicon on [110] and [110] crystal orientation, to have maximal value, almost nil characteristics on [100] and [010] crystal orientation, pressure drag bar 6 distributes along [110] and [110] crystal orientation, has improved the measuring accuracy of sensor chip to acceleration.
In the accompanying drawing: 1 is central siliceous gauge block; 2 is silicon cantilever; 3 is silicon fiml; 4 is that peripheral support is silica-based; 5 is glass substrate; 6 is the pressure drag bar; R1, R2, R3, R4 are resistance.
Claims (5)
1. silicon micro-acceleration sensor chip, comprise peripheral support silica-based (4), the back side of supporting silica-based (4) in the periphery disposes glass substrate (5), the peripheral back side of supporting silica-based (4) is carried out bonding with glass substrate (5) and is connected, it is characterized in that, the siliceous gauge blocks of central authorities (1) are positioned at the peripheral centre of supporting silica-based (4), two ends on one side adjacent with central siliceous gauge block (1), the front of periphery support silica-based (4) dispose two silicon fimls (3), the one side of two silicon fimls (3) supports silica-based (4) with the periphery and links to each other with central siliceous gauge block (1), another side is connected with silicon cantilever (2), intermediate configurations on the silicon cantilever (2) has four pressure drag bars (6), and four pressure drag bars (6) constitute Wheatstone bridge.
2. a kind of silicon micro-acceleration sensor chip according to claim 1, it is characterized in that, there are 5-10 μ m gap in described central mass (1) and peripheral the support between silica-based (4) so that central mass (1) is unsettled, the weight of the beam diaphragm structure together support siliceous gauge blocks of central authorities (1) that described silicon cantilever (2) and silicon fiml (3) are formed, the thickness of described silicon fiml (3) is less than the thickness of silicon cantilever (2).
3. a kind of silicon micro-acceleration sensor chip according to claim 1 is characterized in that, described silicon fiml (3), and the axis of silicon cantilever (2) and central siliceous gauge block (1) three part overlaps.
4. a kind of silicon micro-acceleration sensor chip according to claim 1 is characterized in that, described silicon cantilever (2) has adopted (100) crystal face silicon.
5. a kind of silicon micro-acceleration sensor chip according to claim 1 is characterized in that, described four pressure drag bars (6) are arranged along [110] and [110] crystal orientation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009102194640A CN101738494B (en) | 2009-12-11 | 2009-12-11 | Silicon micro-acceleration sensor chip |
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| CN2009102194640A CN101738494B (en) | 2009-12-11 | 2009-12-11 | Silicon micro-acceleration sensor chip |
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| CN101738494A true CN101738494A (en) | 2010-06-16 |
| CN101738494B CN101738494B (en) | 2011-07-27 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102589762A (en) * | 2012-03-08 | 2012-07-18 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN103063877A (en) * | 2012-12-25 | 2013-04-24 | 西安交通大学 | Silicon substrate quartz acceleration sensor with temperature isolation structure |
| CN103076051A (en) * | 2012-12-24 | 2013-05-01 | 西安交通大学 | Silicon micro-flow-rate sensor chip in beam film four-beam structure |
| CN103076050A (en) * | 2012-12-24 | 2013-05-01 | 西安交通大学 | Silicon micro-flow-rate sensor chip in beam film single-beam structure |
| CN103090914A (en) * | 2012-12-24 | 2013-05-08 | 西安交通大学 | Four-film-structured silicon micro-flow sensor chip |
| CN106290983A (en) * | 2016-07-28 | 2017-01-04 | 西安交通大学 | A kind of acceleration sensor chip based on amorphous carbon film |
| CN110045151A (en) * | 2019-04-16 | 2019-07-23 | 西安交通大学 | A kind of accelerometer with high g values chip and preparation method thereof of cross deformation girder construction |
| CN111157761A (en) * | 2020-01-02 | 2020-05-15 | 西安交通大学 | Temperature self-compensation in-plane double-axis acceleration sensor and temperature compensation method |
| CN112093771A (en) * | 2019-06-17 | 2020-12-18 | 芜湖天波光电技术研究院有限公司 | Single-shaft high-impact acceleration sensor and manufacturing method thereof |
| CN113465791A (en) * | 2021-06-17 | 2021-10-01 | 西安交通大学 | Resonant pressure sensor and preparation method thereof |
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2009
- 2009-12-11 CN CN2009102194640A patent/CN101738494B/en not_active Expired - Fee Related
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102589762B (en) * | 2012-03-08 | 2014-01-15 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN102589762A (en) * | 2012-03-08 | 2012-07-18 | 西安交通大学 | Micro-voltage high-overload sensor chip of beam membrane single island structure |
| CN103076051B (en) * | 2012-12-24 | 2015-07-08 | 西安交通大学 | Silicon micro-flow-rate sensor chip in beam film four-beam structure |
| CN103090914B (en) * | 2012-12-24 | 2016-04-13 | 西安交通大学 | A kind of four membrane structure silicon microflow sensor chips |
| CN103090914A (en) * | 2012-12-24 | 2013-05-08 | 西安交通大学 | Four-film-structured silicon micro-flow sensor chip |
| CN103076051A (en) * | 2012-12-24 | 2013-05-01 | 西安交通大学 | Silicon micro-flow-rate sensor chip in beam film four-beam structure |
| CN103076050A (en) * | 2012-12-24 | 2013-05-01 | 西安交通大学 | Silicon micro-flow-rate sensor chip in beam film single-beam structure |
| CN103076050B (en) * | 2012-12-24 | 2015-07-08 | 西安交通大学 | Silicon micro-flow-rate sensor chip in beam film single-beam structure |
| CN103063877B (en) * | 2012-12-25 | 2014-08-20 | 西安交通大学 | Silicon substrate quartz acceleration sensor with temperature isolation structure |
| CN103063877A (en) * | 2012-12-25 | 2013-04-24 | 西安交通大学 | Silicon substrate quartz acceleration sensor with temperature isolation structure |
| CN106290983A (en) * | 2016-07-28 | 2017-01-04 | 西安交通大学 | A kind of acceleration sensor chip based on amorphous carbon film |
| CN110045151A (en) * | 2019-04-16 | 2019-07-23 | 西安交通大学 | A kind of accelerometer with high g values chip and preparation method thereof of cross deformation girder construction |
| CN112093771A (en) * | 2019-06-17 | 2020-12-18 | 芜湖天波光电技术研究院有限公司 | Single-shaft high-impact acceleration sensor and manufacturing method thereof |
| CN111157761A (en) * | 2020-01-02 | 2020-05-15 | 西安交通大学 | Temperature self-compensation in-plane double-axis acceleration sensor and temperature compensation method |
| CN111157761B (en) * | 2020-01-02 | 2021-11-19 | 西安交通大学 | Temperature self-compensation in-plane double-axis acceleration sensor and temperature compensation method |
| CN113465791A (en) * | 2021-06-17 | 2021-10-01 | 西安交通大学 | Resonant pressure sensor and preparation method thereof |
| CN113465791B (en) * | 2021-06-17 | 2022-05-20 | 西安交通大学 | Resonant pressure sensor and preparation method thereof |
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| CN101738494B (en) | 2011-07-27 |
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