CN100495038C - Three dimensional integrated micro mechanical acceleration sensor producing method - Google Patents
Three dimensional integrated micro mechanical acceleration sensor producing method Download PDFInfo
- Publication number
- CN100495038C CN100495038C CN 200510111362 CN200510111362A CN100495038C CN 100495038 C CN100495038 C CN 100495038C CN 200510111362 CN200510111362 CN 200510111362 CN 200510111362 A CN200510111362 A CN 200510111362A CN 100495038 C CN100495038 C CN 100495038C
- Authority
- CN
- China
- Prior art keywords
- sensing element
- silicon chip
- acceleration
- sensitive
- attenuate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
This invention relates to a high range acceleration sensor integrated by three dimensions characterizing that said sensor is integrated by three independent acceleration sensing elements, in which, the structures of the elements in X and Y shaft directions are the same arrayed vertically to each other and their sensitive direction is on the Si plane, the structure of that on the Z shaft is in another parallel to a side of those on the X and Y shafts and the sensitive direction is the vertical direction of silicon plate. The sensor is processed by MEMS routine technology and there is no interference among the sensitive elements of the three directions.
Description
Technical field
The present invention relates to integrated high range micro-machine acceleration transducer of a kind of three-dimensional and preparation method thereof, belong to the silicon micro mechanical sensor technical field.
Background technology
Along with the development of micro mechanical system (MEMS) sensor technology, various MEMS sensors are people's attention extremely, and wherein micro-machine acceleration transducer has been widely used in different field, as automotive airbag, and aspects such as robot industry and robotization control.Yet in the monitor procedure that carries out various motions, the one dimension acceleration transducer can not well satisfy monitoring requirement, thereby three dimension acceleration sensor just becomes an important directions of MEMS acceleration transducer development.
In recent years, the report of the integrated three dimension acceleration sensor development of monolithic is arranged constantly.General three dimension acceleration sensor is to be made of single sensitive element, its sensitive element is the mass that responsive mass constituted one spring system with a plurality of beams, such acceleration transducer is to utilize in same system on three directions simultaneous minimum torsion mode to X, the acceleration of Y and Z-direction responds simultaneously, yet there is higher paraxonic sensitivity in it, cause three directions that bigger coupled interference is arranged, the output of signal is prone to interference.So, the inventor has proposed three separate piezoresistance type acceleration sensing elements are integrated in the imagination that constitutes three dimension acceleration sensor on the same chip, when making this structure detect acceleration on X, Y and the Z-direction at the same time, the situation that can occur crosstalking mutually not, the information of acceleration detects relatively accurate, and reliability is higher relatively.Wherein the pressure resistance type sensing element is compared capacitive acceleration sensing element aspect manufacture craft and signal deteching circuit bigger superiority again, and the easier integration of technology of these two kinds of dissimilar sensing elements is reached an agreement simultaneously.
Summary of the invention
The objective of the invention is to overcome the shortcoming that existing three dimension acceleration sensor exists, a kind of three dimensional integrated micro mechanical acceleration sensor and method for making are provided.The inventor proposes to become a kind of three-dimensional and hit acceleration sensor device and corresponding manufacture craft existing two types of different one dimension pressure resistance type high-impact acceleration sensing elements are integrated in the present invention.Obtain a kind of three axial sensitivity a kind of three dimension acceleration sensor all suitable with frequency band, the sensitive element of its three directions is not almost harassed situation mutually, and can design the three dimension acceleration sensor spare of different range demands as required.
Following elder generation describes the design feature of the existing two class high-impact acceleration sensing elements integrated in the three dimension acceleration sensor spare respectively.
1, in the feature of the basic structure design of X, Y direction high-impact acceleration sensing element:
X, Y direction high-impact acceleration sensing element basic structure are to impact curved surface 6, sensitive resistance 7 and silicon frame 8 by semi-girder 5, anti high overload to constitute.Anti high overload impacts upper and lower two sides that curved surface is positioned at semi-girder; X, Y direction high-impact acceleration element are to be made of two identical above-mentioned basic structures respectively.When being subjected to acceleration, two resistance on the semi-girder in the basic structure increase respectively and reduce, and for the ease of constituting the Hui Sitong full-bridge, have adopted " several " font resistive arrangement, i.e. two resistance series connection.Its working principles: its sensitive direction in the silicon plane, when being subjected to impact acceleration, the semi-girder transverse curvature, by piezoresistive effect, sensitive resistance resistivity changes, through Wheatstone bridge output variable signal, to determine the relevant acceleration value.The sensitive direction of this structure is in the silicon plane, and it has adopted the hyperboloid overcurrent protection structure, makes sensitive structure be subjected to good protection in the situation of large impact overload, to satisfy the use under the HI high impact environment; And hyperboloid also makes the press-filming damping of acceleration member be improved, and effectively must suppress free vibration mode, has improved measuring accuracy; On the other hand, the sensitive structure semi-girder of design, its long thick ratio is about 35:1 and generous ratio is about 3:1, makes it obtain the highly sensitive while, has the frequency band of broad, and effectively suppresses the yo-yo effect perpendicular to sensitive direction.
2, in the feature of Z-direction high-impact acceleration sensing element structural design:
Z-direction high-impact acceleration sensing element structure is to be made of responsive thin plate 1, mass 2, sensitive resistance 3 and outside framework 4.The sensitive direction of this structure is perpendicular to the silicon plane, the double quality blocks structure that it has adopted both-end to prop up admittedly, and structural symmetry, the width of the width of responsive thin plate and mass is basic identical simultaneously.Its working principles: when being subjected to impact acceleration, the mass relative motion causes responsive thin plate to deform, thereby cause that the voltage dependent resistor (VDR) resistivity on the responsive thin plate changes, through Wheatstone bridge output variable signal, to determine the relevant acceleration value.This structure makes responsive thin plate have bigger stiffness coefficient, and when being subjected to HI high impact, the stress on the responsive thin plate is less than the silicon faulting stress, guarantees that sensitive structure can fracture failure; On the other hand, symmetrical structure is better must control transversal effect, has promptly controlled the yo-yo effect of non-sensitive direction; And the responsive thin plate of big stiffness coefficient is arranged, make Z-direction high-impact acceleration sensing element that higher natural frequency be arranged.
In sum, be not difficult to find out that there are many unanimities in two class acceleration sensing elements at aspect of performance, so the present inventor just can make the two compatible three dimension acceleration sensor that is integrated at an easy rate by suitable design integration; And by process integration, the technology of reaching the two is compatible, utilizes the silicon micromachining technique common process just to finish the making of three-dimension device.
In the technology of the integrated acceleration sensor device of three-dimensional was made, key was to obtain a kind of manufacture craft all compatible to two kinds of dissimilar acceleration sensing elements.At first, the sensitive structure of the sensing element of X, Y direction and the sensing element of Z-direction is made all to be needed the silicon chip vertical direction is carried out attenuate, global design according to three-dimension device, the two is agreed on thickness thinning, promptly in perpendicular to the reduction process step on the silicon chip direction, obtain compatibility, can carry out jointly, not disturb mutually; Secondly, need to form suitable damping spacing between mass in the sensing element structure of Z-direction and the lower cover, and the sensing element of X, Y direction does not have this requirement, in order to reach the compatibility of technology, its method is before the silicon chip vertical direction is carried out attenuate, increases a reticle, and this edition attenuate area is greater than the area that carries out attenuate in the silicon chip vertical direction, be that this version is to form a pre-reducing thin groove, and the attenuate of vertical silicon chip direction carry out in this groove.When forming pre-reducing thin groove, the damping gap that forms between mass in the sensing element structure of Z-direction and the lower cover, can't the sensing element structure of X and Y direction be impacted on the size of Z-direction like this, make both reach compatibility at this step process; The 3rd, the sensing element of Z-direction needs lower cover to form the damping gap, adopts the silex glass bonding technology at this, carries out former bonding, and this not only satisfies the sensing element needs of Z-direction, and also makes the back side of X, Y direction sensing element be protected.It all is identical compatible technologies in two kinds of sensing elements that remaining manufacture craft part discharges sensitive structure as resistance, lead-in wire and employing deep reaction ion etching (DRIE), can carry out simultaneously.When adopting deep reaction ion etching technology to finish release X, Y direction sensitive structure, process and the corresponding overload protection curved-surface structure of semi-girder.
Basic manufacturing process of the present invention is as follows:
1, corrosion forms pre-reducing thin groove at the N of twin polishing type (100) the silicon chip back side to adopt anisotropic etch solution, simultaneously also corrosion form Z-direction the sensing element structural requirement and cover plate between the damping spacing.
2, adopt anisotropic etch solution to carry out the whole attenuate of silicon chip vertical direction in pre-reducing thin groove, reach and make the size value of two class sensing element sensitive structures in the vertical side of silicon chip, corrosion simultaneously forms the mass of Z-direction sensing element.
3, adopt the method in boron ion implantation ion or diffused with boron source, make sensitive resistance, its square resistance is in 80 ~ 90 ohm of scopes.
4, make ohmic contact regions and fairlead.
5,, and form lead-in wire and pad at silicon chip upper surface deposit aluminium film.
6, carry out the anode linkage of silex glass, form the lower cover of three-dimension device.Reach the required damping of sensing element structure of Z-direction, simultaneously device has also been played protection.
7, adopt deep reaction ion etching technology to discharge the sensitive structure of X, Y and Z-direction simultaneously.
This shows that three dimensional integrated micro mechanical acceleration sensor provided by the invention is to utilize two kinds of dissimilar acceleration sensing element design to form, it is to be integral by three separate acceleration sensing sets of elements to constitute specifically.The structure of the acceleration sensing element of X, Y direction is identical, and its sensitive direction is the silicon in-plane, the mutual vertical arrangement of the sensing element of two same structures; The acceleration sensing element of Z-direction is another kind of structure, and its sensitive direction is the vertical direction of silicon chip, a side of the acceleration sensing element of parallel arrangement and X, Y direction.Arranging as shown in Figure 3 of concrete three dimension acceleration sensor structure.Aspect the technology making, device adopts the silex glass bonding technology to form the lower cover of device, and when forming the required damping gap of Z-direction acceleration sensing element, also the acceleration sensing element to X, Y direction plays a protective role; Employing will solve two types of problems that device there are differences perpendicular to the method for attenuate figure work in pre-reducing thin groove of silicon chip direction on technology.This method is at first to make pre-reducing thin groove, form the gap between Z-direction acceleration sensing element and the cover plate simultaneously, entire device is done in pre-reducing thin groove perpendicular to the zone of wafer thinning, employing anisotropic etch solution corrosion attenuate reaches the requirement of sensitive structure size, meanwhile makes the mass of Z-direction acceleration sensing element.
In sum, be not difficult to find out, the present invention has utilized the various advantages of two kinds of dissimilar acceleration sensing elements self, it provides good basis for integrating in design for three dimension acceleration sensor, by suitable design adjustment, can obtain one has the relatively consistent sensitivity and the three dimension acceleration sensor of frequency band at three direction of principal axis, and this performance to three dimension acceleration sensor spare is a very important point; On the other hand, because three-dimension device is to be become one by three separate acceleration member, so the signal of three directions can the phase mutual interference, the acceleration signal of each direction can both be exported extraction exactly.And carry out suitable Change In Design by critical size, just can obtain the three-dimensional high-impact acceleration sensor of 1～100,000 different ranges sensitive structure.Make in the technology of three dimension acceleration sensor, the acceleration sensing element of three directions can both be well compatible on technology, and manufacture craft all is the common process of micromachined, so the final realization of device also is easy to, cost of manufacture is not high yet, is easy to realize large-scale production yet.
Description of drawings
Fig. 1: the one dimension acceleration sensing element synoptic diagram of two kinds of different structures
(a): sensitive direction is that the one dimension acceleration of Z axle passes element
(b): sensitive direction is the one dimension sensing element of X or Y-axis
Fig. 2: the one dimension acceleration sensing component structure size synoptic diagram of two kinds of different structures
(a): sensitive direction is that the one dimension acceleration of Z axle passes component structure size synoptic diagram
(b): sensitive direction is that the one dimension acceleration of X, Y-axis passes component structure size synoptic diagram
Fig. 3: three-dimensional integrated acceleration transducer vertical view synoptic diagram
(a): the one dimension acceleration of X, Y-axis passes element
(b): the one dimension acceleration of Z axle passes element
Fig. 4:＜110〉bar convex corner compensation pictorial diagram
Among the figure:
1-responsive thin plate 5-semi-girder
2-mass, 6-overload protection curved surface
3-bar resistor 7-" several " font resistance
4-silicon frame, 8-silicon frame
H-semi-girder thickness a
1-responsive thin plate length
L-semi-girder length h
1-responsive sheet gauge
h
2-mass thickness
a
2-single mass and single responsive thin plate total length
Embodiment
Further specify substantive distinguishing features of the present invention and obvious improvement below by specific embodiment, but the present invention only limits to described embodiment by no means.
Range is the design and the manufacture craft of the three-dimensional integrated high-impact acceleration sensor of 50,000 g:
1, in the physical dimension of X and Y direction acceleration sensing element: semi-girder length is 515 μ m, and thickness is 16 μ m, and width is 50 μ m;
2, in the physical dimension of Z axle side acceleration sensing element: gauge of sheet is 50 μ m, and length is 50 μ m, and the thickness of mass is 370 μ m, and the total length of mass and thin plate is 670 μ m, and the width of total is 1400 μ m.
Whole three-dimensional adds integrated high-impact acceleration sensor and is of a size of: long 4100 μ m, wide 3500 μ m, thick 920 μ m.What adopt in this manufacture craft is that mass concentration number percent is 40%, temperature is 50 ℃ potassium hydroxide (KOH) etchant solution, form the width of semi-girder simultaneously, gauge of sheet and mass, therefore must consider the salient angle problem of KOH etchant solution corrosion, we have adopted document (" Etching frontcontrol of＜110〉strips for corner compensation " M.H.Bao, C.Burrer, J.Bausells, J.Esteve, S.Marco.Sensors and Actuators A, 37-38,727-732, (1993) .) in the convex corner compensation technology, adopt multiple-limb＜110 in the literary composition being mended salient angle one side〉strip corrodes compensation, the length formula that effectively compensates bar is: L
Eff=2.7H
c=L
1+ L
2+ L
3+ 5.37B, H
cBe corrosion depth; B is＜110〉compensation bar width.As shown in Figure 4.Therefore this technology selects for use the silicon chip of 420 μ m thickness to design the effective length of concrete convex corner compensation bar at this to the also requirement to some extent of thickness of whole silicon wafer as required.
Concrete process implementing step is as follows:
1, initial silicon chip, the two throwing silicon chips of N type (100), thickness 420 μ m.
2, after the oxidation photoetching, adopting mass concentration number percent is 40%, and temperature is 50 ℃ of KOH etchant solution corrosion of silicon back sides, forms the pre-reducing thin groove of 2.4 μ m, and 2.4 μ m are the damping spacing between Z-direction sensitive element architecture quality piece zone and the cover plate just.
3, oxidation once more, and in pre-reducing thin groove, make required figure, adopting percentage is 40%, temperature is 50 ℃ of KOH etchant solution corrosion of silicon back sides, in pre-reducing thin groove, the structure division of the acceleration sensor of three directions is thinned to 50 μ m, and makes the mass of Z-direction sensitive element.
4, the method that adopts the boron ion to inject forms the sensitive resistance with piezoresistive effect at the positive boron ion that injects of silicon chip, and resistance sizes is 2.5 ~ 3k Ω.
5, etch fairlead at ohmic contact regions.
6,, and form lead-in wire and pad at the aluminium film of the positive sputter 6500 dust thickness of silicon chip.
7, adopt the bonding machine to carry out the anode linkage of silex glass at the silicon back side, the temperature of bonding is 380 ℃, at first adds-600V voltage 3 minutes, adds-1200V voltage 8 clocks again, and cool to room temperature takes out.
8, adopt deep reaction ion etching (DRIE) technology to discharge the sensitive structure of X, Y and Z-direction simultaneously.
Illustrate: the thickness and the width of the sensitive structure of mentioning in the invention be respectively, the consistent thickness of structure that is of a size of with direction of motion, and vertical with direction of motion is the width of structure.
Claims (2)
1. the method for making of the integrated high-range acceleration transducer of a three-dimensional, it is characterized in that: described three dimension acceleration sensor is to be integral by three separate acceleration sensing sets of elements to constitute; A class X wherein, the structure of the acceleration sensing element of Y direction is identical, its sensitive direction is at the silicon in-plane, by semi-girder, anti high overload impacts curved surface, sensitive resistance and silicon frame constitute, anti high overload impact curved surface be positioned at semi-girder on, following two sides, the mutual vertical arrangement of the sensor element of above-mentioned two same structures, the acceleration sensing element of one class Z-direction is by responsive thin plate, mass, sensitive resistance and outside framework constitute, the double quality blocks structure that adopts both-end to prop up admittedly, its sensitive direction is the vertical direction of silicon chip, and parallel arrangement is in X, one side making step of the acceleration sensing element of Y direction is:
(a) corrosion forms pre-reducing thin groove at the N of twin polishing type (100) the silicon chip back side to adopt anisotropic etch solution, simultaneously also corrosion form Z-direction the sensing element structural requirement and cover plate between the damping spacing;
(b) adopt anisotropic etch solution in pre-reducing thin groove, to carry out the whole attenuate of silicon chip vertical direction, reach the structure of the acceleration sensing element of making X, Y direction and the size value of acceleration sensing component structure on the silicon chip vertical direction of Z-direction, corrosion simultaneously forms the mass of Z-direction sensing element;
(c) method in employing boron ion implantation ion or diffused with boron source is made sensitive resistance, and its square resistance is in 80～90 ohm of scopes;
(d) make ohmic contact regions and fairlead;
(e), and form lead-in wire and pad at silicon chip upper surface deposit aluminium film;
(f) carry out the anode linkage of silex glass, form the lower cover of three-dimension device; Reach the required damping of sensing element structure of Z-direction, simultaneously device has also been played protection;
(g) adopt deep reaction ion etching technology to discharge the sensitive structure of X, Y and Z-direction simultaneously; Before the silicon chip vertical direction is carried out attenuate, increase a reticle, the area of reticle attenuate forms a pre-reducing thin groove greater than the area that carries out attenuate in the silicon chip vertical direction, and the attenuate of two vertical silicon chip directions carries out in this groove; When forming pre-reducing thin groove, the damping gap that the mass in the sensing element structure of Z-direction forms between lower cover makes and reaches compatibility on both technologies.
2. press the method for making of the integrated high-range acceleration transducer of the described three-dimensional of claim 1, it is characterized in that having adopted the convex corner compensation technology at the whole attenuate that adopts anisotropic etch solution to carry out silicon chip, adopt multiple-limb＜110 being mended salient angle one side strip corrodes compensation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510111362 CN100495038C (en) | 2005-12-09 | 2005-12-09 | Three dimensional integrated micro mechanical acceleration sensor producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510111362 CN100495038C (en) | 2005-12-09 | 2005-12-09 | Three dimensional integrated micro mechanical acceleration sensor producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1821787A CN1821787A (en) | 2006-08-23 |
| CN100495038C true CN100495038C (en) | 2009-06-03 |
Family
ID=36923262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510111362 Active CN100495038C (en) | 2005-12-09 | 2005-12-09 | Three dimensional integrated micro mechanical acceleration sensor producing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100495038C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101968495B (en) * | 2010-07-27 | 2013-03-06 | 中国科学院上海微系统与信息技术研究所 | Cantilever beam acceleration transducer manufactured by micro-machining on single side of single silicon chip and method |
| CN102147424B (en) * | 2011-03-01 | 2012-11-28 | 东南大学 | Triaxial integration silicon micro-resonance type accelerometer |
| CN102435772B (en) * | 2011-10-14 | 2013-03-20 | 苏州文智芯微系统技术有限公司 | Micro-mechanical acceleration transducer with directly linked silicon wafers based on silicon through-hole technique |
| CN102607543B (en) * | 2012-04-01 | 2014-12-24 | 苏州文智芯微系统技术有限公司 | Silicon wafer directly-bonded micro-mechanical gyroscope based on silicon through hole technology |
| CN104483511B (en) * | 2014-11-13 | 2017-10-27 | 中国科学院上海微系统与信息技术研究所 | (111) three integrated axle micro-machine acceleration transducers of single silicon-chip and preparation method |
| CN105954541A (en) * | 2016-04-22 | 2016-09-21 | 中国科学院声学研究所 | Three-axis surface acoustic wave acceleration sensor |
| CN106872728B (en) * | 2017-03-03 | 2019-06-11 | 苏州戎维邦信息技术有限公司 | Band outranges the three axis integrated form acceleration transducer of high-g level of protection |
| CN108303567B (en) * | 2018-02-02 | 2020-04-24 | 扬州杰利半导体有限公司 | Preparation method of three-mass MEMS capacitance differential type triaxial accelerometer integrated by single chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951510A (en) * | 1988-07-14 | 1990-08-28 | University Of Hawaii | Multidimensional force sensor |
| CN1337581A (en) * | 2001-09-21 | 2002-02-27 | 中国科学院上海冶金研究所 | Microacceleration silicon sensor with overload protection and cable of being stuck to curved surface and its manufacture |
| CN2570793Y (en) * | 2002-08-30 | 2003-09-03 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical acceleration transducer with measuring range up to 2million m/s power |
| CN1442511A (en) * | 2003-04-11 | 2003-09-17 | 中国科学院上海微系统与信息技术研究所 | Convex angle compensation method of crystal orientation on silicon by potassium hydroxide solution |
-
2005
- 2005-12-09 CN CN 200510111362 patent/CN100495038C/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951510A (en) * | 1988-07-14 | 1990-08-28 | University Of Hawaii | Multidimensional force sensor |
| CN1337581A (en) * | 2001-09-21 | 2002-02-27 | 中国科学院上海冶金研究所 | Microacceleration silicon sensor with overload protection and cable of being stuck to curved surface and its manufacture |
| CN2570793Y (en) * | 2002-08-30 | 2003-09-03 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical acceleration transducer with measuring range up to 2million m/s power |
| CN1442511A (en) * | 2003-04-11 | 2003-09-17 | 中国科学院上海微系统与信息技术研究所 | Convex angle compensation method of crystal orientation on silicon by potassium hydroxide solution |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1821787A (en) | 2006-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100495038C (en) | Three dimensional integrated micro mechanical acceleration sensor producing method | |
| CN105137120B (en) | A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof | |
| CN102495234B (en) | Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method | |
| CN100552453C (en) | Symmetry straight beam structure condenser type micro-acceleration sensor and preparation method thereof | |
| CN101692099B (en) | Piezoresistive double-shaft micro-accelerometer with on-chip zero offset compensation and manufacturing method thereof | |
| CN101738494B (en) | Silicon micro-acceleration sensor chip | |
| CN103197101A (en) | Non-uniform section cantilever beam piezoelectricity accelerating speed sensor | |
| CN106908626B (en) | A kind of capacitance microaccelerator sensitive structure | |
| KR20060071840A (en) | Acceleration sensor | |
| WO2006112051A1 (en) | Acceleration sensor | |
| CN101271124B (en) | L-beam piezoresistance type micro-accelerometer and production method thereof | |
| CN105021846B (en) | A kind of six axis one type micro acceleration sensors and preparation method thereof | |
| CN100487461C (en) | Metal capacitance microaccelerator | |
| CN107917750A (en) | A kind of MEMS hot types sound particle sensor | |
| CN110389237A (en) | Double-shaft acceleration sensor chip and preparation method thereof in a kind of face | |
| CN102261979A (en) | Low-range piezoresistive pressure sensor for vacuum measurement and manufacturing method thereof | |
| Zhao et al. | A bossed diaphragm piezoresistive pressure sensor with a peninsula–island structure for the ultra-low-pressure range with high sensitivity | |
| CN107817364A (en) | A kind of axis accelerometer chip of MEMS straight pull and vertical compressions formula two and preparation method thereof | |
| CN101118249A (en) | Piezoresistance type accelerometer with high g values | |
| CN102680738B (en) | Transverse-interference-resistant silicon nanobelt giant-piezoresistive-effect micro-accelerometer | |
| CN107356785B (en) | MEMS torsion type accelerometer with flexible hinge structure | |
| CN110531114B (en) | Pure axial deformation MEMS triaxial piezoresistive accelerometer chip and preparation method thereof | |
| CN110531115B (en) | MEMS piezoresistive triaxial impact accelerometer chip with pure axial deformation sensitive beam and preparation method thereof | |
| CN112964905A (en) | Piezoresistive double-shaft acceleration sensor chip and preparation method thereof | |
| JP2010169575A (en) | Inertial sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |