WO2011149278A2 - Large-area deposition device for gas-mixing prevention - Google Patents
Large-area deposition device for gas-mixing prevention Download PDFInfo
- Publication number
- WO2011149278A2 WO2011149278A2 PCT/KR2011/003855 KR2011003855W WO2011149278A2 WO 2011149278 A2 WO2011149278 A2 WO 2011149278A2 KR 2011003855 W KR2011003855 W KR 2011003855W WO 2011149278 A2 WO2011149278 A2 WO 2011149278A2
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- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- gas
- deposition apparatus
- area deposition
- supply line
- Prior art date
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- 230000008021 deposition Effects 0.000 title claims abstract description 44
- 230000002265 prevention Effects 0.000 title claims abstract description 5
- 239000007789 gas Substances 0.000 claims abstract description 85
- 238000002347 injection Methods 0.000 claims abstract description 60
- 239000007924 injection Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000151 deposition Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 21
- 230000033001 locomotion Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 9
- 239000007921 spray Substances 0.000 claims description 8
- 238000007667 floating Methods 0.000 claims description 3
- 230000035939 shock Effects 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Definitions
- the present invention relates to a large-area deposition apparatus for preventing gas mixing, which prevents gas from being mixed with each other before the gas is introduced into the chamber, and prevents gas mixture from being uniformly mixed with the gas to be uniformly injected into the chamber.
- a large area deposition apparatus for preventing gas mixing, which prevents gas from being mixed with each other before the gas is introduced into the chamber, and prevents gas mixture from being uniformly mixed with the gas to be uniformly injected into the chamber.
- Thin film deposition technology by chemical vapor deposition (CVD) is very important in many applications such as insulating layer and active layer of semiconductor device, transparent electrode of liquid crystal display device, light emitting layer and protective layer of light emitting display device. .
- physical properties of thin films deposited by CVD are highly sensitive to process conditions such as deposition pressure, deposition temperature, and deposition time.
- process conditions such as deposition pressure, deposition temperature, and deposition time.
- the composition, density, adhesion, and deposition rate of the thin film to be deposited may be changed according to the change in deposition pressure.
- Chemical vapor deposition includes LPCVD (Low Pressure Chemical Vapor Deposition), APCVD (Atmospheric Pressure Chemical Vapor Deposition), LTCVD (Low Temperature Chemical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), MOCVD (Metal Organic Chemical Vapor Deposition) Can be divided.
- MOCVD uses metal organic compounds as precursors, and is a technology for growing a desired thin film by sending high vapor pressure metal organic compound vapor to a heated substrate surface in a chamber.
- MOCVD has excellent step coverage and is free from damage to the substrate or the crystal surface, and can grow high purity and high quality thin films.
- the deposition rate is relatively short, the process time can be shortened, and the productivity is also excellent.
- the conventional MOCVD apparatus requires a shower head in which many fine holes are formed for uniformly injecting a gas, thereby increasing the cost.
- MOCVD devices require processing of the shower head into a more complex shape to prevent the two or more gases used in the deposition of the thin film to mix before spraying to prevent deposition in undesired locations. For this reason, there is a problem that the cost of the MOCVD apparatus further increases.
- the conventional MOCVD apparatus has a problem in that maintenance is inconvenient because the entire shower head must be separated when the gas injection hole of the shower head is clogged for repair or cleaning.
- an object of the present invention is to simplify the structure of the gas to prevent the mutual mixing before entering the chamber, and at the same time the gas is uniformly mixed chamber It is to provide a large-area deposition apparatus for preventing gas mixing by uniformly spraying the inside, which can reduce the cost.
- Another object of the present invention is to provide a large area deposition apparatus for preventing gas mixing, which is easy to maintain.
- the gas is uniformly mixed into the chamber. It is ejected uniformly. That is, the gas can be prevented from being mixed before the gas is introduced into the chamber with a simple structure, and the gas can be uniformly mixed to eject the gas into the chamber, thereby reducing the cost.
- the injection nozzle ejects the gas while oscillating left and right, the gas is more uniformly mixed and more uniformly ejected to the substrate inside the chamber, thereby improving the quality of the film deposited on the substrate.
- FIG. 1 is a plan view of a large-area vapor deposition preventing apparatus according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view taken along the line “I-I” of FIG. 1.
- FIG. 3 is an enlarged view of a portion “X” of FIG. 2.
- FIG. 4 is an enlarged view of a portion “Y” of FIG. 2.
- FIG. 5 is a perspective view of a supply line of a large-area vapor deposition preventing apparatus according to an embodiment of the present invention.
- FIG. 6 is a perspective view of one supply line and a spray nozzle shown in FIG. 5.
- FIG. 7 is a cross-sectional view taken along the line “II-II” of FIG. 1.
- FIG. 8 is a cross-sectional view of the jet nozzle shown in FIG. 6.
- FIG. 9 is a partially cutaway perspective view of the connector portion shown in FIG. 8.
- FIG. 9 is a partially cutaway perspective view of the connector portion shown in FIG. 8.
- FIG. 10 is a plan view of FIG. 5.
- a gas mixing prevention large area deposition apparatus comprising: a chamber providing a deposition space for depositing a predetermined material on a substrate; A plurality of supply ports installed at one side of the chamber and supplying gas into the chamber; A plurality of supply lines disposed in the chamber and connected to the respective supply ports; And a plurality of injection nozzles disposed above the substrate introduced into the chamber, connected along each supply line, and alternately arranged to alternately disperse different gases to eject the upper surface of the substrate. do.
- the large-area vapor deposition preventing apparatus is installed in the chamber C, the chamber C, and functions as a heater to heat the substrate A.
- a susceptor S and a gate valve G installed at one side of the chamber C to allow the substrate A to enter and exit the chamber C, and are provided outside the chamber C to supply air inside the chamber C.
- a vacuum pump (not shown) for exhausting.
- the chamber C provides a closed space for depositing a predetermined material on the substrate A.
- the substrate A is deposited on the plurality of fins P and deposited.
- a plurality of supply ports 100 for supplying gas are installed in an upper portion of the chamber C, and a plurality of supply lines 110 connected to the respective supply ports 100 to supply deposition gas inside the chamber C. ) Is placed.
- Supply line 110 is a pipeline through which gas or steam flows.
- a plurality of injection nozzles 120 are installed below the supply line 110.
- the injection nozzle 120 is a conduit in which holes are formed to eject the gas moving inside the supply line 110 to the outside.
- the injection nozzle 120 is disposed above the substrate A inside the chamber C, and is alternately disposed along each supply line 110 to alternately supply other gases to the upper surface of the substrate A.
- the injection nozzle 120 is densely arranged in a row above the substrate A to uniformly inject the deposition gas onto the substrate A corresponding to the large area. Different gases injected from the injection nozzles 120 are sprayed and overlapped with each other, so that they are mixed with each other. Then, it is deposited with a uniform thickness on the large-area substrate (A).
- FIG. 1 to 4 the upper surface portion of the chamber C vibrates the injection nozzle 120 uniformly on the large-area substrate A to improve the efficiency in which different gases are mixed and deposited on the substrate A.
- FIG. A vibration air cylinder 130 for increasing is provided. The air cylinder 130 is mechanically connected to the injection nozzle 120 to vibrate the injection nozzle 120.
- the air cylinder 130 is coupled to the shaft rod 135 and the shaft rod 135 which moves linearly by the stroke provided by the air cylinder 130 to cross the vibration displacement of the shaft rod 135 to the injection nozzle (
- the nozzle bracket 140 for transmitting to 120 is connected.
- the air cylinder 130 may be replaced with a vibration motor having a shaft capable of electrically vibrating.
- the air cylinder 130 may be replaced with a reciprocating mechanism that enables the mechanical rotational movement of the rotational movement of the motor. That is, the air cylinder 130 is a driving body that provides a reciprocating motion for the vibration of the injection nozzle (120).
- a plurality of shaft rods 135 may be installed on the chamber (C).
- three shaft rods 135 may be installed on the upper surface of the chamber (C).
- Two of the three shaft rods 135 on the left side are connected to the air cylinder 130 and the nozzle bracket 140 on the lower side, and the other on the right side is connected only to the nozzle bracket 140 on the lower side.
- the shaft rod 135 and the nozzle bracket 140 can support the weight of the injection nozzle 120 installed in the form of hanging in the chamber (C), and the number varies so as to balance the vibration of the injection nozzle 120. Can be changed.
- the illustrated example supports the three parts of the injection nozzle 120, but can also be fabricated as a four-part support structure for supporting two parts on both sides in order to increase the stability, and furthermore can be manufactured as a five or six part support structure It may be.
- the cylinder rod 131 of the air cylinder 130 is connected to the moving table 136 is a slide movement, the two shaft rods 135 are coupled to both sides of the moving table (136).
- slide tubes 137 are provided on both sides of the movable table 136, and the slide tubes 137 are fitted to guide bars 138 for guiding the movement of the slide tubes 137.
- both end portions of the guide bar 138 is coupled to the holder 139 is fixed on the chamber (C).
- the two shaft rods 135 are connected to the cylinder rod 131 of the air cylinder 130 through the moving table 136 and move together by the cylinder rod 131.
- the guide bar 138 and the slide tube 137 can be replaced with other slide mechanisms for transmitting the linear motion of the air cylinder 131.
- the slide tube 137 and the guide bar 138 are adopted because the binding force of the guide bar 138 to the slide tube 137 during the slide movement is good.
- the shaft rod 135 is installed on the left and right sides of the chamber (C).
- the shaft rod 135 on the left side receives the driving force of the air cylinder 130, and the shaft rod 135 on the right side is connected to another part of the spray nozzle 120 to guide the movement of the spray nozzle 120.
- the nozzle bracket 140 extends downward from the upper portion of the chamber C, the upper end is coupled to the shaft rod 135, and the lower end is connected to the injection nozzle 120.
- the air cylinder 130 causes the plurality of injection nozzles 120 arranged in a line to vibrate between the main nozzle 120 and the injection nozzle 120 adjacent to each other. For example, if a plurality of injection nozzles 120 are arranged at intervals of 20 mm each and two different gases are alternately injected, the vibration displacement of any injection nozzle 120 is up to 40 mm.
- a floating joint for attenuating vibration by reducing axis errors between the cylinder rod 131 and the shaft rod 135 of the air cylinder 130 is disposed on the upper left portion of the chamber C. 141 is provided.
- the cylinder rod 131 of the air cylinder 130 and the movement path of the shaft rod 135 may be difficult to accurately mount to the upper surface of the chamber C. If the cylinder rod 131 of the air cylinder 130 and the movement path of the shaft rod 135 do not coincide in a straight line, the shaft rod 135 connected to the cylinder rod 131 repeatedly transmits the axial force that is displaced. If received, the durability of the air cylinder 130 and the shaft rod 135 is reduced. In this case, the floating joint 141 performs buffered power transmission when the power transmission axis between the cylinder rod 131 and the shaft rod 135 is shifted.
- the left / right upper surface portion of the chamber C is provided with a closed space through which the shaft rod 135 passes, and a shaft housing 145 in which both ends of the shaft rod 135 are movable is installed.
- the shaft housing 145 serves to close the movement path of the shaft rod 135.
- the shaft guide 146 surrounding the shaft rod 135 protruding to both sides of the shaft housing 145 closes the shaft. It is installed in the housing 145.
- a metal O-ring (not shown), rubber ring (not shown) may be installed together.
- the sealing guide 146 installed on the right side of the shaft housing 145 is provided with a bellows 147 for buffering the shock transmitted from the shaft rod 135 in the air cylinder 130.
- the bellows 147 is a corrugated pipe in which a passage through which the shaft rod 135 is inserted is formed.
- the ball bushing 148 into which the shaft rod 135 is inserted is fixed to the left and right sealing guides 146.
- the ball bushing 148 guides the linear movement of the shaft rod 135 and also performs an airtight function on the outside of the hermetic guide 146.
- the supply line 110 is fixed around the support 150.
- the support 150 is positioned on the substrate A, and is installed in the form of being suspended in the chamber C by the nozzle bracket 140 coupled to the shaft rod 135.
- the support 150 is a rectangular frame, and the injection nozzles 120 are installed in a row below the support 150 to close most of the inner space of the support 150.
- Supply line 110 is fixed to the support 150 by a fixed block 151.
- Semicircular grooves 152 are formed at both sides of the fixed block 151 so that half of the supply line 110 having a circular cross section is inserted and restrained.
- the fixing block 151 is fixed on the support 150 by fastening means such as screws or bolts.
- the fixed block 151 is installed at predetermined intervals along the supply line 110 disposed on the rectangular support 150.
- the supply line 110 is installed at an upper surface of the support 150, and the injection nozzles 120 are arranged in a row below the support 150.
- Injection nozzle 120 is installed in the longitudinal direction to cross the horizontal direction corresponding to the long side in the support 150.
- the plurality of injection nozzles 120 are disposed along the longitudinal direction of the substrate A to form a quadrangle corresponding to the quadrangle substrate A.
- FIG. 5 In the case of the fifth generation substrate A, the spray nozzle 120 provides a rectangular area corresponding to 1500 mm x 1300 mm.
- the injection nozzle 120 may be installed to cross in the longitudinal direction of the short length of the support 150. 6 illustrates a connection relationship between the supply line 110 and the injection nozzle 120.
- first connecting pipe 161 is coupled to the bottom of the supply line 110
- second connecting pipe 162 is coupled to the upper surface of the injection nozzle 120 in correspondence with the first connecting pipe 161.
- the first connector 161 and the second connector 162 are interconnected via the connector 163.
- the first connection pipe 161 is coupled to the connector 163 through the support 150 (see FIG. 5).
- the connector 163 is a fitting means.
- a bellows pipe 164 is provided between the plurality of supply ports 100 and the supply line 110.
- the bellows pipe 164 connects the supply port 100 and the supply line 110 and is stretched to allow the left and right flow of the supply line 110 with respect to the supply port 100.
- the bellows pipe 164 is not directly connected to the supply line 110, but is connected to the supply line 110 through another supply port connected by a fitting.
- the injection nozzle 120 is composed of a concentric double tube. That is, the injection nozzle 120 is connected to the supply line 110 to receive the gas from the supply line 110 and the first tube 171 and the first tube formed with a first hole 171a for ejecting the gas upwards It is comprised by the 2nd tube 172 which wraps around 171, and the 2nd hole 172a which blows gas downward is formed.
- the first hole 171a of the first tube 171 has a larger gap between holes than the hole of the second tube 172.
- the two first holes 171a of the first tube 171 may supply the deposition gas corresponding to the five second holes 172a of the second tube 172.
- the deposition gas ejected through the first hole 171a of the first tube 171 moves along the second tube 172 and flows downward in an evenly spread state, and the second hole (2) of the second tube 172 172a) is ejected evenly downward.
- the injection nozzle 120 can be manufactured in a multi-tube structure of more than three. At this time, it is advantageous for the uniform ejection of the gas to reverse the directions of the holes for ejecting the gas for each tube.
- FIG. 10 is a plan view of FIG. 5 and illustrates a flow direction of the deposition gas supplied to the two supply ports 100 of FIGS. 1 and 7.
- arrows illustrated in FIGS. 6 and 9 illustrate the flow direction of the deposition gas ejected from one injection nozzle 120.
- Source materials of the deposition gas flowing through each of the two supply ports 100 shown in FIG. 2 are, for example, Zn and O 2 .
- Zn source material may be a Zn organic compound DEZ (diethylzinc) is used
- O 2 source material may be used O 2 .
- DEZ diethylzinc
- the temperature is raised, for example, about 100 ° C., so that DEZ is changed from a solid or liquid state to a gaseous state, and then supplied to one supply port 100.
- the source material of the O 2 O 2 is supplied onto Since gaseous at normal temperatures and third port 100.
- Deposition gas of each source material is supplied to each supply line 110 connected to each supply port 100 to fill the supply line 110 formed in a square. Then, each deposition gas is injected downward through the injection nozzle 120 connected in the transverse direction with respect to each supply line (110). At this time, the injection nozzle 120 is composed of a double tube, the deposition gas spread along the second tube 172 by flowing upward through the first hole 171a of the first tube 171 is the second tube. It blows out to the board
- the cylinder rod 131 of the air cylinder 130 is reciprocated, and the cylinder rod 131 reciprocates the shaft rod 135 installed in the shaft housing 145.
- the shaft rod 135 vibrates the nozzle bracket 140 coupled to the support 150 by a reciprocating motion while moving by the stroke of the cylinder rod 131 set in advance.
- the injection nozzle 120 installed at the lower portion of the nozzle bracket 140 vibrates while reciprocating to both sides.
- the vibration range of the arbitrary injection nozzles 120 among the plurality of injection nozzles 120 may be set within the interval between the arbitrary injection nozzles 120 and the nearest injection nozzle 120.
- the plurality of injection nozzles 120 are composed of alternating DEZ gas injection nozzles 120 and O 2 gas injection nozzles 120, and vibration of any DEZ gas injection nozzles 120.
- the range may be twice the spacing between any DEZ gas injection nozzle 120 and the nearest O 2 gas injection nozzle 120.
- each of the injection nozzles 120 injects different deposition gases while exchanging positions by vibrating the air cylinder 130, and the injected deposition gases form a zigzag waveform from above to below.
- A) is reached to the side.
- the DEZ gas and the O 2 gas which is the deposition gas, are sprayed onto the substrate A while being more easily mixed by the vibration of the injection nozzle 120, and have a constant thickness on the substrate A by chemical reaction such as oxidation / reduction. Is deposited with ZnO.
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Abstract
Description
Claims (20)
- 기판 상에 소정 물질을 증착하기 위한 증착공간을 제공하는 챔버;A chamber providing a deposition space for depositing a predetermined material on a substrate;상기 챔버의 일측에 설치되며 상기 챔버의 내부로 가스를 공급하는 복수의 공급포트;A plurality of supply ports installed at one side of the chamber and supplying gas into the chamber;상기 챔버의 내부에 배치되며, 상기 각 공급포트에 연결된 복수의 공급라인; 및A plurality of supply lines disposed in the chamber and connected to the respective supply ports; And상기 챔버로 투입된 상기 기판의 상방에 배치되고, 상기 각 공급라인을 따라 연결되며, 상호 교번하게 배치되어 각기 다른 가스를 교번하여 상기 기판의 상면에 분출하는 복수의 분사노즐을 포함하는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And a plurality of injection nozzles disposed above the substrate introduced into the chamber, connected along each supply line, and alternately arranged to alternately disperse different gases to eject the upper surface of the substrate. Large area deposition equipment for preventing gas mixing.
- 제1항에 있어서,The method of claim 1,상기 챔버의 외측에는 상기 분사노즐을 진동시키는 에어 실린더가 구비된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.Large area deposition apparatus for preventing gas mixing, characterized in that the outer cylinder is provided with an air cylinder for vibrating the injection nozzle.
- 제2항에 있어서,The method of claim 2,상기 챔버의 외측에는 이동가능하게 설치되어 상기 에어 실린더의 실린더 로드와 연동되는 복수의 샤프트 로드가 설치되며,A plurality of shaft rods are installed on the outside of the chamber so as to be movable and interlock with the cylinder rods of the air cylinders.상기 챔버의 내부에는 상기 샤프트 로드에 일단부가 결합되고 상기 분사노즐에 타단부가 연결된 복수의 노즐 브라켓이 설치된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And a plurality of nozzle brackets having one end coupled to the shaft rod and the other end connected to the injection nozzle, respectively, in the chamber.
- 제3항에 있어서,The method of claim 3,상기 샤프트 로드는 상기 챔버의 상면에 세 개가 설치되고,Three shaft rods are installed on the upper surface of the chamber,상기 세 개의 샤프트 로드 중 두 개는 상기 에어 실린더에 연결되며,Two of the three shaft rods are connected to the air cylinder,다른 하나는 반대 측에서 상기 노즐 브라켓 중 어느 하나에 연결된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.The other large area deposition apparatus for preventing gas mixing, characterized in that connected to any one of the nozzle bracket on the opposite side.
- 제4항에 있어서,The method of claim 4, wherein상기 에어 실린더의 상기 실린더 로드에는 슬라이드 이동되는 이동대가 연결되고, 상기 이동대의 양측에는 상기 에어 실린더에 연결된 상기 두 개의 샤프트 로드가 결합된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.The movable rod which is slide-moved is connected to the cylinder rod of the air cylinder, and the two shaft rods connected to the air cylinder are coupled to both sides of the movable unit.
- 제5항에 있어서,The method of claim 5,상기 이동대의 양측에는 슬라이드 관이 설치되고, 상기 슬라이드 관은 상기 슬라이드 관의 이동을 안내하는 가이드 바에 끼워진 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.A slide tube is installed on both sides of the movable table, and the slide tube is fitted with a guide bar for guiding the movement of the slide tube.
- 제6항에 있어서,The method of claim 6,상기 가이드 바의 양측 단부는 상기 챔버의 상면에 설치된 고정대에 결합된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.Both end portions of the guide bar is gas mixing prevention large-area deposition apparatus, characterized in that coupled to the fixing table installed on the upper surface of the chamber.
- 제3항에 있어서,The method of claim 3,상기 챔버의 외측에는 상기 샤프트 로드가 통과하는 밀폐된 공간을 제공하며, 상기 샤프트 로드의 양측 단부가 이동가능하게 설치되는 복수의 샤프트 하우징이 설치된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And a plurality of shaft housings provided at an outer side of the chamber to provide a closed space through which the shaft rod passes, and wherein both shaft ends of the shaft rod are movable to be installed.
- 제3항에 있어서,The method of claim 3,상기 에어 실린더의 상기 실린더 로드와 상기 샤프트 로드 사이에는 축선 오차에 따른 진동을 줄이기 위한 플로팅 조인트가 구비되는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And a floating joint is provided between the cylinder rod of the air cylinder and the shaft rod to reduce vibration due to an axial error.
- 제3항에 있어서,The method of claim 3,상기 샤프트 로드에는 상기 에어 실린더의 상기 실린더 로드로부터 전달되는 충격을 완충시키는 벨로우즈가 설치된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.The shaft rod is a large area deposition apparatus for preventing gas mixing, characterized in that the bellows for cushioning the shock transmitted from the cylinder rod of the air cylinder is installed.
- 제10항에 있어서,The method of claim 10,상기 샤프트 로드에는 상기 벨로우즈에 접촉되는 볼 부싱이 설치된 특징으로 하는 가스혼합 방지용 대면적 증착장치.The shaft rod deposition apparatus for preventing gas mixing, characterized in that the ball bushing in contact with the bellows is installed.
- 제2항에 있어서,The method of claim 2,상기 에어 실린더는 임의의 상기 분사노즐을 상호 인접하는 분사노즐 간의 간격 내에서 진동시키는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And the air cylinder vibrates any of the spray nozzles within a distance between adjacent spray nozzles.
- 제1항에 있어서,The method of claim 1,상기 공급라인은 상기 기판의 상측 상기 챔버의 내부에 설치된 지지체의 둘레에 고정되는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And the supply line is fixed around a support installed in the chamber above the substrate.
- 제13항에 있어서,The method of claim 13,상기 지지체는 사각 프레임 형상이고, 상기 분사노즐은 상기 지지체의 하방에 일렬로 설치되어 상기 지지체의 내측공간을 폐쇄하는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.The support body has a rectangular frame shape, the injection nozzle is installed in a row below the support to close the inner space of the support gas deposition preventing large area deposition apparatus, characterized in that.
- 제13항에 있어서,The method of claim 13,상기 지지체에는 상기 공급라인을 고정시키는 고정블록이 설치된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.A large area deposition apparatus for preventing gas mixing, characterized in that the support block is installed on the support to fix the supply line.
- 제1항에 있어서,The method of claim 1,상기 공급라인의 저면에는 제1 연결관이 결합되고, 상기 분사노즐의 상면에는 상기 제1 연결관에 대응하여 제2 연결관이 결합되며, 상기 제1 연결관과 상기 제2 연결관은 커넥터를 매개로 상호 연결된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.A first connector is coupled to a bottom surface of the supply line, and a second connector is coupled to an upper surface of the injection nozzle corresponding to the first connector, and the first connector and the second connector connect a connector. Large area deposition apparatus for preventing gas mixing, characterized in that interconnected via a medium.
- 제1항에 있어서,The method of claim 1,상기 복수의 공급포트와 상기 공급라인 사이에는 벨로우즈 관이 구비된 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.A large-area deposition apparatus for preventing gas mixing, characterized in that a bellows pipe is provided between the plurality of supply ports and the supply line.
- 제1항에 있어서,The method of claim 1,상기 분사노즐은 동심을 이루는 다중 튜브로 구성되는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.The injection nozzle is a large area deposition apparatus for preventing gas mixing, characterized in that consisting of multiple concentric tubes.
- 제18항에 있어서,The method of claim 18,상기 분사노즐은 상기 공급라인에 연결되어 상기 공급라인으로부터 가스를 공급받아 상방으로 가스를 분출하는 제1 홀이 형성된 제1 튜브; 및The injection nozzle may include a first tube connected to the supply line and receiving a gas from the supply line and having a first hole for ejecting gas upwardly; And상기 제1 튜브를 감싸며, 상기 제1 홀에서 분출된 가스를 하방으로 분출하는 제2 홀이 형성된 제2 튜브를 구비하는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And a second tube surrounding the first tube, the second tube having a second hole for ejecting the gas ejected from the first hole downward.
- 제1항에 있어서,The method of claim 1,상기 복수의 분사노즐은 상기 기판의 길이 방향을 따라 배치되어 사각형을 이루는 것을 특징으로 하는 가스혼합 방지용 대면적 증착장치.And the plurality of injection nozzles are disposed along a length direction of the substrate to form a quadrangle.
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KR910006164B1 (en) * | 1987-03-18 | 1991-08-16 | 가부시키가이샤 도시바 | Making method and there device of thin film |
KR20010021506A (en) * | 1997-07-04 | 2001-03-15 | 에르바스티, 매티 | Method and apparatus for growing thin films |
KR20060075564A (en) * | 2004-12-28 | 2006-07-04 | 동부일렉트로닉스 주식회사 | Gas injector |
KR20090020797A (en) * | 2007-08-24 | 2009-02-27 | 주식회사 테라세미콘 | Semiconductor manufacturing apparatus |
-
2010
- 2010-05-28 KR KR1020100050421A patent/KR101120039B1/en active IP Right Grant
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KR910006164B1 (en) * | 1987-03-18 | 1991-08-16 | 가부시키가이샤 도시바 | Making method and there device of thin film |
KR20010021506A (en) * | 1997-07-04 | 2001-03-15 | 에르바스티, 매티 | Method and apparatus for growing thin films |
KR20060075564A (en) * | 2004-12-28 | 2006-07-04 | 동부일렉트로닉스 주식회사 | Gas injector |
KR20090020797A (en) * | 2007-08-24 | 2009-02-27 | 주식회사 테라세미콘 | Semiconductor manufacturing apparatus |
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CN102906861A (en) | 2013-01-30 |
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