TW201213258A - Method for manufacturing non-alkali glass - Google Patents

Method for manufacturing non-alkali glass Download PDF

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Publication number
TW201213258A
TW201213258A TW100142205A TW100142205A TW201213258A TW 201213258 A TW201213258 A TW 201213258A TW 100142205 A TW100142205 A TW 100142205A TW 100142205 A TW100142205 A TW 100142205A TW 201213258 A TW201213258 A TW 201213258A
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glass
melting
less
content
temperature
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TW100142205A
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Chinese (zh)
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TWI415813B (en
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Shinkichi Miwa
Tatsuya Takaya
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Nippon Electric Glass Co
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/42Details of construction of furnace walls, e.g. to prevent corrosion; Use of materials for furnace walls
    • C03B5/43Use of materials for furnace walls, e.g. fire-bricks
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/167Means for preventing damage to equipment, e.g. by molten glass, hot gases, batches
    • C03B5/1672Use of materials therefor
    • C03B5/1675Platinum group metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/076Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Glass Compositions (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

The manufacture method of non-alkali glass of this invention comprises a step of formulating raw materials to a non-alkali glass having a composition of SiO2-Al2O3-B2O3-RO (RO is at least one of MgO, CaO, BaO, SrO, and ZnO), a step of melting glass materials using a melting furnace made of high zirconium refractories, a step of supplying melting glass to molding device using a supply passage made of platinum or platinum alloy, and a step of molding the melting glass supplied to molding device to a specified configuration.

Description

201213258 六、發明說明: 【發明所屬之技術領域】 本發明係關於液晶顯不器、EL顯示II (electroluminescence,電激發光顯示器)等平面顯示器其板 所使用之無驗性玻璃。 【先前技術】 以往之液晶顯示器、EL顯示器等平面顯示器美板方 面,廣泛地使用無驗性玻璃基板。 特別係薄膜電晶體式主動矩陣液晶顯示器(tft_lcd) 等電子裝置’由於型薄且消耗功率較少,所以使用於汽車 導航、數位相機之觀景器(finder),近年則使用於個人電腦 螢幕、TV用等各種用途方面。 TFT-LCD面板工廠係在於玻璃工廠中所成型的玻璃 基板(未加工板)上,製作複數份裝置之後,再依每個裝置 進行分割切斷而製成產品,藉此提昇生產性、降低成本。 近年來,在TV、個人電腦的螢幕等用途方面,就連裝置 亦要求較大型,為求將該等裝置進行多層狀態,因此便要 求1000x1200mm之大面積玻璃基板。 再者’如行動電話、筆記型電腦之類的攜帶式裝置方 面,就從攜帶時之方便性觀之,則要求機器的輕量化,便 連帶地對玻璃基板亦要求輕量化。在達成玻璃基板輕量化 方面,將基板薄壁化係有效方法,目前TFT_LCD用玻璃基 板的4示準厚度約為〇.7nmi之薄度。 但是’如上述之大型、薄壁的玻璃基板由於本身重量 3 316263D01 201213258 而發生較大的彎曲,而此情況在製造步驟中將導致重大問 題。 換句話說,此種玻璃基板係在玻璃工廠中經成型後, 再通過切斷、徐冷、檢查、清洗等步驟。在該等步驟中, 玻璃基板將進出形成複數層架的卡匣。此卡匣係在形成長 寬内側2面、或長、寬與高度内侧3面的架上,水平方向 保持成載置玻璃基板二邊、或3邊的狀態,但是由於大且 薄型玻璃基板的彎曲量較大,因而當將玻璃基板放入卡匣 架上之際,部分之玻璃基板將接觸到卡匣或其他玻璃基板 而破損’或當從卡匣的架上取出玻璃基板之際,將大幅搖 晃而容易形成不穩定狀態。此外,在顯示器工廠中,由於 使用相同型態的卡匣,因而亦會發生相同的問題。 此種因玻璃基板本身重量而產生的彎曲量,會因與玻 璃役度成正比並與彈性係數(Y〇ung,s modulus)成反比而起 變化°因此’為能低抑玻璃基板的彎曲量,便需要提高由 彈性係數/密度比所表示的比彈性係數。為求提高比彈性係 數’便必須成為彈性係數較高,且密度較低的玻璃材質, 但疋’即便相同比彈性係數,密度較低的玻璃,所減輕的 知里便可增加相同重量玻璃的厚度。因為玻璃寶曲量係與 厚度的平方成反比而變化’因此盡量增加厚度則對降低彎 曲的效果極大。因為降低玻璃密度對達成玻璃的輕量化亦 有極大效果’因此最好盡量降低玻璃密度。 一般而言’在此種無鹼性玻璃中含有較大量的鹼土金 屬氧化物。為達玻螭的低密度化,則降低鹼土金屬氧化物 4 316263D01 201213258 含量乃屬有效方式,但是因為鹼土金屬氧化物乃促進玻璃 熔融性的成分,因而若降低其含量時,熔融性便降低。若 玻璃的熔融性降低,則在玻璃中較容易發生氣泡、雜質等 内部缺陷。因為玻璃中之氣泡、雜質將妨礙光的穿透,使 成為顯示器用玻璃基板的致命缺陷,為能抑制此種内部缺 陷’必須將玻璃在高溫中進行長時間熔融。另一方面,高 溫中的熔融將增加對玻璃熔融窯的負擔。溫度越高時窯中 所使用的耐火物,被侵蝕的情況越激烈,導致縮短窯的壽 命週期。 再者,對此種玻璃基板而言,耐熱衝擊性亦屬重要的 要求課題。即便對玻璃基板端面施行截角處理,仍將存在 有細微的傷痕或龜裂,若因熱而將拉伸應力集中作用於傷 痕或龜裂處時,偶而會出現玻璃基板龜裂的情況。玻璃的 破損不僅降低生產線的運轉率,破損時所產生的細微玻璃 粉末附著於玻璃基板上,惟恐引發斷線 良等狀況。 & ®案處理不 但是,TFT-LCD的最近開發方向, . 除大晝面化、輕詈 化之外’可列舉如:高精細化、高速變 〜《您化、高開口率化篝 尚性能化方向發展,特別是近年來,乂 -^ α λλ 在夜晶顯示器的高性 月匕與輕董化之目的下,正熱烈的朝開發多曰石 TFT-LCD(P-Si · TFT-LCD)的方向前進^發 从在的p-Si · TFT-LCD乃因為其製造步驟溫度高達 义0叫C以上,所以僅 能使用石英玻璃基板。但是,依昭畏 破近的開發狀況,雖製 造步驟溫度已降低至400至600它,相9 Μ 心如同現今大量生 316263D01 5 201213258 產的非晶矽TFT-LCD(a-Si · TFT-LCD),仍採用無鹼性玻 璃基板。 p-Si · TFT-LCD之製造步驟在相較於a-Si · TFT-LCD 之製造步驟下,熱處理步驟偏多,因為玻璃基板重複急速 加熱與急速冷卻,因而對玻璃基板的熱衝擊更為嚴重。此 外,如上述,玻璃基板呈大型化,不僅玻璃基板容易發生 溫度差,而且在端面處發生微小傷痕、龜裂的機率亦提高, 因此,在熱製程中基板遭受破壞的機率升高。解決此問題 的最根本且有效之方法,乃減少由熱膨脹差所衍生的熱應 力,因而便需求熱膨脹係數較低的玻璃。另外,如與薄膜 電晶體(TFT)材料之間的熱膨脹差變大時,因為玻璃基板發 生翹曲現象,因而亦要求具有與p-Si等TFT材料之熱膨脹 係數(約30至33xl(T7/°C)相近似的熱膨脹係數。 再者,p_Si_TFT-LCD之製造步驟溫度近來雖說降低, 但是與a-Si · TFT-LCD之製造步驟溫度相比,卻仍然居高 不下。若玻璃基板的耐熱性偏低時,在p-Si · TFT-LCD製 造步驟中,當玻璃基板處於400至600°C的高溫狀態時, 將引發所謂熱收縮之微小尺寸的收縮,此現象將引發TFT 像素間距偏移情況,恐將導致顯示不良的原因。此外,若 玻璃基板的耐熱性更低時,恐將引發玻璃基板變形、翹曲 等情況。另外,在成膜等液晶製造步驟中,為了不使玻璃 基板因熱收縮而引起圖案偏移的情況,因而便需求财熱性 優異的玻璃。 再者,在TFT-LCD用玻璃基板表面上,形成透明導電 6 316263D01 201213258 膜、絕緣膜、半導體膜、金屬膜等,且利用微影蝕刻(光蝕 刻)而形成各種電路或圖案。此外,在該等成膜、光钱刻步 驟中,對玻璃基板施行各種熱處理、藥物處理。 因此,玻璃基板中若含有鹼金屬氧化物(Na2〇、K2〇、 LizO)時,在熱處理中鹼離子將擴散於已成膜的半導體物質 中,判斷將導致膜特性的劣化,所以便要求實質上未含鹼 金屬氧化物,或不致因光餘刻步驟中所使用的各種酸、驗 等藥物而引發劣化情況的耐藥性者。 再者’ TFT-LCD用玻璃基板主要係利用下引法 (downdraw process)、浮式法(floating process)而形成。下引 法的例子有如流孔下引法(slot downdraw process)、溢流下 引法(overflow downdraw process)等,由於利用下拉法所形 成的玻璃基板並不需要研磨加工,因此,具有易於達到降 低成本的優點。但是,當利用下拉法形成玻璃基板時,因 為玻璃基板較容易失透(devitrification),因而亦需求耐失 透性優越的玻璃。 因而便有提案滿足上述諸項特性,特別係以低密度、 低知脹、南應變點為特徵的基板用無驗性玻璃。 (如:日本專利特開2002-308643號公報) 在曰本專利特開2002-308643號公報中所揭示之無鹼 性玻璃,其熔融溫度[相當於1〇2·5泊(p〇ise)的溫度]約達 1580°C以上,需要進行高溫熔融,且密度在2 45g/cm3以 下’ 30至380 C溫度範圍内之平均熱膨脹係數係25至 36xl(T7/°C、應變點在64〇°c以上,乃滿足於上述之要求者。 7 316263D01 201213258 然而,若以工業性規模生產此種低密度、低細脹、尚 應變點之無鹼性玻璃時,則將因製造條件的些微變動,使 得在成型時產生失透情況。 【發明内容】 本發明之目的在於提供:即便以工業性規模生產,仍 能在不致造成玻璃失透而可成型的無驗性玻璃之製造方 法,以及依此方法所獲得之無鹼性玻璃。 當以工業性規模生產需要高溫熔融之無鹼性玻璃 時’從製造設備的長壽命化觀點而言,便可認為利用耐蝕 性優異之高锆系耐火物以構成熔融窯或設於其下游的各種 設備(如:澄清槽、調整槽等)。但是,依照本發明人等的研 究’發現若藉由採用高锆系耐火物的製造設備,將如上述 曰本專利特開2002-308643號公報中所揭示之無鹼性玻璃 進行炼融時’ Zr〇2成分將從耐火物中炼出,導致玻璃中的 Zr〇2濃度提昇’極容易陷於失透狀態,遂而提案本發明。 本發明之無鹼性玻璃之製造方法係包含有:將原料調 配成具有質量百分比計Si〇2:5〇至7〇%、Ah〇3:1〇至25%、 B2〇3:8. 4 至 20%、Mg0:〇 至 1〇%、Ca0:3 至 15%、Ba〇:〇 至 〇. 1/〇、Sr〇:〇 至 1〇%、Zn〇:〇 至 1〇%、Ti〇2:〇 至 5%、p2〇5:〇 至5/»組成,密度在2. 45g/cm3以下,.30至380°C之溫度範 =内的平均熱膨脹係數在25至36xl(m:之無驗性玻璃的 及在採用高錐系耐火物之溶融熏,將玻璃原料炫融 供雁^驟’利用至少其中—部分由# 合金所形成的 w路’將’熔融玻璃供應給成型裝置的供應步驟;以及 316263D01 8 201213258 將供應給成型裝置的熔融玻璃,成型為既定形狀的成型步 驟。並且,在本發明中,碎玻璃亦涵蓋於玻璃原料中。另 外,本發明中所謂「無鹼性」係指鹼金屬氧化物(Li2〇、 Na20、K20)在0.2質量%以下。 如依照本發明之製造方法,熔融窯採用耐蝕性較高之 高锆系耐火物,即便將必須施行高溫熔融的無鹼性玻璃進 行溶㉔時,仍可長時間執行穩定操作。而且,將從炫融窯 輸达出來的熔融玻璃,供應給成型裝置的供應通路之至少 一部分使用鉑或鉑合金,而降低由Zr〇2熔出而造成的玻璃 污染現象。所以,便可不致發生失透而成型為玻璃。若嚴 格規範從電極的熔出、或原料雜質、或玻璃中所含有作為 澄π劑用之Sn〇2時,便能更加改善失透性。若增加玻璃 之水分量時,便可降低玻璃的黏性。故,特別有利於在製 造尚溫熔融之無鹼性玻璃,特別係指因降低鹼土成分且低 祗度化與低膨脹化,而降低失透性之無驗性玻璃之情況下。 再者’本發明之無鹼性玻璃,係低密度、低膨脹、高 應變點’且熱收縮量、彎曲量較小,耐熱衝擊性優異,並 較不易發生翹曲現象。同時具有即便以工業規模生產仍不 易失透之特徵。故,頗適用於液晶顯示器、EL顯示器之基 板用玻璃。 【實施方式】 利用本發明方法所製得玻璃係具有201213258 VI. Description of the Invention: [Technical Field] The present invention relates to a non-inspective glass used for a flat panel display such as a liquid crystal display or an EL display II (electroluminescence display). [Prior Art] In the conventional flat panel display panels such as liquid crystal displays and EL displays, non-authentic glass substrates have been widely used. In particular, electronic devices such as thin film transistor active matrix liquid crystal displays (tft_lcd) are used in car navigation and digital camera finder because of their thinness and low power consumption. In recent years, they have been used in personal computer screens. TV and other uses. The TFT-LCD panel factory is manufactured on a glass substrate (unprocessed board) formed in a glass factory, and after making a plurality of parts, the product is divided and cut into products to form a product, thereby improving productivity and reducing costs. . In recent years, in terms of applications such as TVs and personal computer screens, even larger devices have been required. In order to carry out the multi-layer state of such devices, a large-area glass substrate of 1000 x 1200 mm is required. In addition, the portable device such as a mobile phone or a notebook computer is required to be lightweight, and the glass substrate is required to be lighter in weight. In order to reduce the weight of the glass substrate, it is an effective method for thinning the substrate. Currently, the thickness of the glass substrate for TFT_LCD is about 7 nm. However, the large, thin-walled glass substrate as described above undergoes a large bending due to its own weight of 3 316 263 D01 201213258, which causes a major problem in the manufacturing steps. In other words, the glass substrate is formed into a glass factory and then subjected to steps such as cutting, cooling, inspection, and cleaning. In these steps, the glass substrate will enter and exit the cassette forming the plurality of shelves. The cassette is formed on a frame having two sides on the inner side of the length and the width, or three sides on the inner side of the length, the width, and the height, and is horizontally held in a state in which the glass substrate is placed on both sides or three sides, but the large and thin glass substrate is used. The amount of bending is large, so when the glass substrate is placed on the cassette truss, part of the glass substrate will be damaged by contact with the cassette or other glass substrate' or when the glass substrate is taken out from the frame of the cassette, It is easy to form an unstable state by shaking a lot. In addition, in the display factory, the same problem occurs because the same type of cassette is used. The amount of bending due to the weight of the glass substrate itself is proportional to the glass duty and inversely proportional to the elastic modulus (Y〇ung, s modulus). Therefore, it is possible to reduce the amount of bending of the glass substrate. Therefore, it is necessary to increase the specific elastic modulus represented by the elastic coefficient/density ratio. In order to improve the specific elastic coefficient, it is necessary to become a glass material with a high modulus of elasticity and a low density. However, even if the glass has a lower specific modulus and a lower density, the reduced weight of the glass can increase the thickness of the same weight glass. . Since the amount of glass is inversely proportional to the square of the thickness, the effect of reducing the thickness is greatly reduced. Since lowering the density of the glass is also very effective in achieving weight reduction of the glass, it is preferable to minimize the density of the glass. In general, a relatively large amount of an alkaline earth metal oxide is contained in such an alkali-free glass. In order to reduce the density of the alkali glass, it is effective to reduce the content of the alkaline earth metal oxide 4 316263D01 201213258. However, since the alkaline earth metal oxide promotes the meltability of the glass, the meltability is lowered when the content is lowered. When the meltability of the glass is lowered, internal defects such as bubbles and impurities are more likely to occur in the glass. Since bubbles and impurities in the glass impede the penetration of light, it is a fatal defect of the glass substrate for a display, and it is necessary to melt the glass at a high temperature for a long time to suppress such internal defects. On the other hand, melting at high temperatures will increase the burden on the glass melting kiln. The higher the temperature, the more refractory the refractory used in the kiln is, resulting in a shortened kiln life cycle. Further, thermal shock resistance is also an important requirement for such a glass substrate. Even if the end surface of the glass substrate is subjected to the truncation treatment, there are fine flaws or cracks. When the tensile stress is concentrated on the scratches or cracks due to heat, the glass substrate may occasionally crack. The breakage of the glass not only lowers the operation rate of the production line, but also causes the fine glass powder generated at the time of damage to adhere to the glass substrate, which may cause a disconnection or the like. The processing of the & ® case is not only the recent development direction of TFT-LCD, but also the high-definition, high-speed change, such as high-definition and high-speed change. The development of performance direction, especially in recent years, 乂-^ α λλ in the high-temperature moonlight and light Donghua of the night crystal display, is enthusiastically developing the multi-facestone TFT-LCD (P-Si · TFT- The direction of the LCD is advanced from the p-Si · TFT-LCD because the temperature of the manufacturing step is as high as 0 or higher, so only the quartz glass substrate can be used. However, in the development situation of Zhaozhaowei, although the manufacturing process temperature has been reduced to 400 to 600, it is like the amorphous 矽 TFT-LCD (a-Si TFT-LCD produced by 316263D01 5 201213258). ), still using an alkali-free glass substrate. The manufacturing steps of p-Si·TFT-LCD are more than the manufacturing steps of a-Si·TFT-LCD, because the glass substrate repeats rapid heating and rapid cooling, so the thermal shock to the glass substrate is more serious. Further, as described above, the glass substrate is increased in size, and not only the glass substrate is likely to have a temperature difference, but also the probability of occurrence of minute scratches and cracks at the end faces is improved. Therefore, the probability of damage of the substrate during the thermal process is increased. The most fundamental and effective way to solve this problem is to reduce the thermal stress caused by the difference in thermal expansion, thus requiring a glass with a lower coefficient of thermal expansion. In addition, when the difference in thermal expansion between the material and the thin film transistor (TFT) material becomes large, since the glass substrate is warped, it is required to have a thermal expansion coefficient with a TFT material such as p-Si (about 30 to 33 x 1 (T7/). °C) The similar thermal expansion coefficient. Furthermore, the manufacturing step temperature of the p_Si_TFT-LCD has been lowered recently, but it is still high compared with the manufacturing step temperature of the a-Si TFT-LCD. When the properties are low, in the p-Si·TFT-LCD manufacturing step, when the glass substrate is at a high temperature of 400 to 600 ° C, a shrinkage of a so-called heat shrinkage of a small size is caused, which causes a pixel pitch of the TFT. If the heat resistance of the glass substrate is lower, the glass substrate may be deformed or warped. In addition, in the liquid crystal manufacturing step such as film formation, in order to prevent the glass from being damaged When the substrate is caused to be shifted due to heat shrinkage, a glass having excellent heat quality is required. Further, on the surface of the glass substrate for TFT-LCD, a transparent conductive 6 316263D01 201213258 film or insulating film is formed. A semiconductor film, a metal film, or the like, and various circuits or patterns are formed by photolithography (photolithography). Further, in the film formation and the etching process, various heat treatments and drug treatments are performed on the glass substrate. When an alkali metal oxide (Na 2 〇, K 2 〇, LizO) is contained in the glass substrate, alkali ions are diffused into the formed semiconductor material during the heat treatment, and it is judged that the film characteristics are deteriorated, so that substantially no An alkali metal oxide, or a drug that does not cause deterioration due to various acids, tests, and the like used in the optical remnant step. Further, the glass substrate for TFT-LCD is mainly used by downdraw (downdraw) The process is formed by a floating process. Examples of the down-draw method are a slot downdraw process, an overflow downdraw process, and the like, and a glass substrate formed by a down-draw method. There is no need for grinding processing, and therefore, there is an advantage that it is easy to achieve cost reduction. However, when the glass substrate is formed by the down-draw method, the glass substrate is more likely to be devitrified ( Devitrification), therefore, also requires glass with excellent resistance to devitrification. Therefore, there are proposals to satisfy the above characteristics, especially for non-inspective glass for substrates characterized by low density, low visibility, and south strain point. The alkali-free glass disclosed in Japanese Laid-Open Patent Publication No. 2002-308643, the melting temperature of which is equivalent to a temperature of 1〇2·5 poise (p〇ise). Above about 1580 ° C, high temperature melting is required, and the average thermal expansion coefficient in the temperature range of 30 to 380 C below the density of 2 45 g/cm 3 is 25 to 36 x 1 (T7 / ° C, strain point is above 64 ° C) , is satisfied with the above requirements. 7 316263D01 201213258 However, if such low-density, low-swelling, and strain-free, alkali-free glass is produced on an industrial scale, devitrification may occur during molding due to slight variations in manufacturing conditions. DISCLOSURE OF THE INVENTION An object of the present invention is to provide a method for producing an amorphous glass which can be molded without causing devitrification of the glass, and an alkali-free glass obtained by the method, even if it is produced on an industrial scale. When producing an alkali-free glass that requires high-temperature melting on an industrial scale, it is considered that a high-zirconium refractory excellent in corrosion resistance is used to constitute a molten kiln or downstream thereof from the viewpoint of long life of the manufacturing equipment. Various equipment (such as: clarification tank, adjustment tank, etc.). However, according to the study by the inventors of the present invention, it has been found that when the non-alkali glass disclosed in the above-mentioned Japanese Patent Laid-Open Publication No. 2002-308643 is smelted by the use of a high zirconium refractory manufacturing apparatus, The Zr〇2 component is prepared from the refractory, and the concentration of Zr〇2 in the glass is increased, which is extremely likely to be devitrified. The method for producing the alkali-free glass of the present invention comprises: preparing the raw material to have a mass percentage of Si〇2: 5〇 to 7〇%, Ah〇3:1〇 to 25%, and B2〇3:8. 4 Up to 20%, Mg0: 〇 to 1〇%, Ca0: 3 to 15%, Ba〇: 〇 to 〇. 1/〇, Sr〇: 〇 to 1〇%, Zn〇: 〇 to 1〇%, Ti〇 2: 〇 to 5%, p2〇5: 〇 to 5/» composition, density below 2.45g/cm3, temperature range of .30 to 380 °C = average thermal expansion coefficient within 25 to 36xl (m: Non-experimental glass and in the use of high-cone refractory melt-smoke, the glass raw material is smelted for the use of at least part of the w-road formed by the # alloy to supply the molten glass to the forming device a supply step; and 316263D01 8 201213258 a molding step of molding the molten glass supplied to the molding apparatus into a predetermined shape. Also, in the present invention, the cullet is also included in the glass raw material. Further, in the present invention, "no alkalinity" "The alkali metal oxide (Li2〇, Na20, K20) is 0.2% by mass or less. As in the production method according to the present invention, the melting kiln has a high corrosion resistance. The refractory material can perform stable operation for a long time even when the alkali-free glass which has to be subjected to high-temperature melting is dissolved. Further, the molten glass which is sent from the smelting kiln is supplied to the supply passage of the molding apparatus. At least a part of the platinum or platinum alloy is used to reduce the glass contamination caused by the melting of Zr〇2, so that it can be formed into glass without devitrification. If the electrode is strictly fused, or raw material impurities, or When the glass contains Snn2 as a π agent, the devitrification can be further improved. If the amount of water in the glass is increased, the viscosity of the glass can be lowered. Therefore, it is particularly advantageous for the melting of the glass at the time of manufacture. The non-alkaline glass refers to the case of an amorphous glass which reduces the devitrification due to the reduction of the alkaline earth component and has a low degree of enthalpy and a low expansion. Further, the alkali-free glass of the present invention is low in density. Low expansion and high strain point', and the amount of heat shrinkage and bending are small, the thermal shock resistance is excellent, and the warpage phenomenon is less likely to occur. At the same time, it is not easy to devitrify even if it is produced on an industrial scale. It is quite suitable for glass for substrate of liquid crystal display and EL display. [Embodiment] The glass system obtained by the method of the present invention has

Si〇2-Al2〇3_B2〇3_R〇(R〇 係 MgO、CaO、BaO、SrO、及Si〇2-Al2〇3_B2〇3_R〇(R〇 is MgO, CaO, BaO, SrO, and

ZnO中1種以上)系之組成的無鹼性玻璃。其中,特別適用 9 316263D01 201213258 於必須高溫熔融之低密度、低膨脹、高應變點之玻璃製造。 再者,上述玻璃係依質量百分比計,含有Z r 〇 2在〇 6 % 以下,以0.5%以下為佳,以〇.3%以下為更佳,更以〇2% 以下為佳,特別以在〇.1%以下為最理想,且在含有〇 〇ι% 以上,特別以0.02%以上者為佳。若Zr〇2含量超過〇 6% 以上時,則容易失透。 就從改善失透性的觀點而言,Zr〇2以越少越好。此趨 勢在形成越逼近低密度、低膨脹、高應變點之玻璃時則越 突顯。但是,即便少量添加Zr〇2仍具有提昇無鹼性玻璃之 化學耐久性的作用,所以最好含有此化合物。而且完全防 止Zr〇2以雜質混入玻璃原料中者,將導致原料成本的提 向。況且,亦有可能從碎玻璃混入Zr〇2(譬如當將使用高 鍅耐火物所製成之玻璃當作碎玻璃使用時,在碎玻璃中含 有Zr〇2的可能性極高)。另外,碎玻璃乃如無鹼性玻璃之 類較不易熔融,對玻璃而言屬於適用之原料。而且,就從 時下環保意識高漲的觀點而言,以碎玻璃作為原料而回收 再使用的必要性已逐漸提昇。從此種事情觀之,在本發明 中最好將Zr〇2下限值設定在0.01%。藉由含有&〇2在 Ο·〇1°/〇以上,特別係0.02%以上,便可期待玻璃之化學耐久 f生獲得改善。另外,關於Zr〇2並無需要使用過高純度的原 料,因而可避免原料成本的增加。而便有可能使用碎玻璃 的情形。 再者,上述玻璃係Sn〇2含量依質量百分比計,在〇 3〇/〇 以下,尤以0.28%以下為佳,而且以〇〇〇5%以上為佳,尤 316263D01 10 201213258 其在0.02%以上,特別以〇.〇3%以上為更佳。在本發明中 Sn02雖然非屬必要成分,但屬作為澄清劑而可添加的成 分。而且,當採用Sn〇2電極對玻璃施行電氣熔融時,屬 於電極成分的Sn02將自玻璃中熔出。sn〇2含量乃與因 Zr02所造成玻璃的失透有著密切的關聯,若Sn02量過多 時則易於失透。另外,如同Zr〇2之情況,從改善失透性的 觀點而言,Sn02越少越好。但是’ Sn02乃少數能在高溫 區域中發揮澄清效果的成分,而且以少量便可望獲得較高 的澄清效果。是故,在必須進行高溫熔融且較難以澄清之 本發明之玻璃中,為求改善澄清性、削減As203使用量, 因而Sn02最好含有0.005%以上,尤以0.01%以上為佳。 另外,Sn02之澄清效果乃即便從電極中熔出的Sn02仍能 發揮相同的效果。 依照本發明製造方法所製得的較佳玻璃之具體例,可 列舉如:密度在2.55g/cm3以下(較佳為2.4i;g/cm3以下,尤 以2.42g/cm3以下為更佳),30至380°C溫度範圍内的平均 熱膨脹係數在25至4〇xl(T7/°C(較佳為25至36xl(T7/°C, 尤以28至35xl0_7/°C為更佳),應變點在640°C以上(較佳 為650°C以上)之玻璃。具有此種特性的玻璃,一般必須高 溫熔融,但是具有優異之耐熱衝擊性,因近似TFT材料的 熱膨脹係數而不致發生翹曲現象,便可輕量化,且可降低 彎曲量,熱收縮較小的優點。 如上述之Si〇2-Al203-B203-RO系玻璃,一般相當於 W2·5泊的溫度在1580°C以上,而必須施行高溫熔融。此種 11 316263D01 201213258 必須高溫熔融的玻璃,即便稍微降低黏性仍關聯熔融性的 改善。在降低高溫黏性方面,增加玻璃的水分乃屬有效的 方法。所以,在本發明的基板玻璃中,將玻璃的水份量依 /3 -OH值表示’最好調整成在〇 2/mm以上,較佳為〇 25/瓜瓜 以上’以在〇.3/mm以上為更佳,又以在〇 4/mm以上為最 佳。就從熔融性改善的觀點而言,沒_〇H值雖然越高越好, 但是越高卻有降低應變點的傾向。從此種情形觀之, 值的上限最好在〇.65/mm以下,尤其以在〇,6/mm以下為 佳。另外’玻璃的_〇H值係在玻璃的紅外線吸收光碰中, 依下式求取β β -OH 值^l/xyogiOd/Tz) X:玻璃厚度(mm) Τι:參照波長3846cm_1中之透光率(%) 丁2.在經基吸收波長3600cm 1附近的最小透光率(%) 再者,除上述特性之外,液相溫度最好在115〇<3(:以下 (尤以113(TC以下為佳,尤以11〇〇。(:以下為更佳),液相溫 度中的黏度最好在105.4dPa · s以上(尤以loWdPa · s以上 為佳)。藉由滿足該條件,即便利用下引法成型為板狀,仍 不致發生失透情況,可省卻研磨步驟,而降低生產成本。 尤其’在10%HC1水溶液中,利用8(TC-24小時之條件施 行處理時,其侵蝕量在l〇#m以下,且在1〇%HCl水溶液 中’利用80°C-1小時之條件施行處理時,依目視觀察表面 並未發現白濁、粗糙的情況,而且當在130BHF溶液中利 用20°C-30分鐘之條件施行處理時,其侵蝕量在〇 m以 12 316263D01 201213258 下’且當在63BHF溶液中利用2(rc_3〇分鐘之條件施行處 理時’依目視觀察表面並未發現白濁、粗糙的情形,呈現 較佳狀況。另外’比彈性係數最好在27.5GPa/g· cm·3以上 (尤以29_0GPa _ s以上為佳)。藉由滿足該條件,將可減少 玻璃基板的彎曲量。若102.5dPa · s黏度中之玻璃熔液溫度 在1650°C以下時,溶融性將呈現較佳狀況。 再者,依照本發明之製造方法所製得較佳之玻璃組成 例’可列舉如:依質量百分比計,含有si〇2:5〇至7〇0/〇、An alkali-free glass having a composition of one or more kinds of ZnO. Among them, 9 316263D01 201213258 is especially suitable for the manufacture of glass with low density, low expansion and high strain point which must be melted at high temperature. Further, the glass system contains Z r 〇 2 in an amount of 〇 6 % or less, preferably 0.5% or less, more preferably 〇 3% or less, more preferably 〇 2% or less, particularly in terms of a mass percentage. It is most preferably 〇.1% or less, and is preferably 0.02% or more, particularly preferably 0.02% or more. If the Zr〇2 content exceeds 〇 6% or more, it is easily devitrified. From the viewpoint of improving the devitrification, the less Zr〇2 is, the better. This trend is more pronounced when forming a glass that is closer to a low density, low expansion, high strain point. However, even if Zr〇2 is added in a small amount, it has an effect of improving the chemical durability of the alkali-free glass, so it is preferable to contain the compound. Further, it is possible to completely prevent the Zr〇2 from being mixed into the glass raw material with impurities, which will lead to the improvement of the raw material cost. Moreover, it is also possible to mix Zr〇2 from cullet (for example, when glass made of sorghum refractory is used as cullet, the possibility of containing Zr〇2 in cullet is extremely high). In addition, cullet is less susceptible to melting, such as alkali-free glass, and is a suitable material for glass. Moreover, from the viewpoint of the current high environmental awareness, the necessity of recycling and recycling using broken glass as a raw material has gradually increased. From this point of view, in the present invention, it is preferable to set the lower limit of Zr 〇 2 to 0.01%. By containing &〇2 at Ο·〇1°/〇 or more, especially 0.02% or more, it is expected that the chemical durability of the glass will be improved. In addition, there is no need to use a high-purity raw material for Zr〇2, so that an increase in raw material cost can be avoided. It is possible to use broken glass. Further, the content of the glass-based Sn〇2 is preferably 〇3〇/〇 or less, particularly preferably 0.28% or less, and more preferably 〇〇〇5% or more, particularly 316263D01 10 201213258 at 0.02%. Above, it is more preferable to use 3% or more. In the present invention, although Sn02 is not an essential component, it is a component which can be added as a clarifying agent. Further, when the glass is electrically melted by the Sn 〇 2 electrode, Sn02 which is an electrode component is melted from the glass. The sn〇2 content is closely related to the devitrification of the glass caused by Zr02. If the amount of Sn02 is too large, it is easy to devitrify. Further, as in the case of Zr 〇 2, from the viewpoint of improving the devitrification property, the Sn02 is as small as possible. However, 'Sn02 is one of the few components that can exert a clarifying effect in a high temperature region, and a higher clarification effect can be expected with a small amount. Therefore, in the glass of the present invention which is required to be melted at a high temperature and which is difficult to clarify, in order to improve the clarification property and reduce the amount of As203 used, Sn02 is preferably contained in an amount of 0.005% or more, particularly preferably 0.01% or more. In addition, the clarifying effect of Sn02 is that even the Sn02 melted from the electrode can exert the same effect. Specific examples of the preferred glass obtained by the production method of the present invention include, for example, a density of 2.55 g/cm 3 or less (preferably 2.4 μ; g/cm 3 or less, more preferably 2.42 g/cm 3 or less). , the average coefficient of thermal expansion in the temperature range of 30 to 380 ° C is 25 to 4 〇 xl (T7 / ° C (preferably 25 to 36xl (T7 / ° C, especially 28 to 35xl0_7 / ° C is better), A glass having a strain point of 640 ° C or higher (preferably 650 ° C or higher). Glass having such characteristics generally has to be melted at a high temperature, but has excellent thermal shock resistance, and is not caused by the thermal expansion coefficient of the TFT material. The curvature phenomenon can be lightened, and the bending amount can be reduced, and the heat shrinkage is small. For example, the Si〇2-Al203-B203-RO glass mentioned above generally corresponds to a temperature of W2·5 poise at 1580°C or higher. It is necessary to carry out high-temperature melting. Such 11 316263D01 201213258 must be melted at a high temperature, and the viscosity is improved even if the viscosity is slightly lowered. In terms of lowering the viscosity of the high temperature, it is an effective method to increase the moisture of the glass. In the substrate glass of the present invention, the amount of water of the glass depends on /3 - The OH value means 'preferably adjusted to be 〇2/mm or more, preferably 〇25/guagua or more' to be more preferably 〇3/mm or more, and more preferably 〇4/mm or more. From the viewpoint of improvement in meltability, the higher the value of _〇H, the better, but the higher the tendency to lower the strain point. From this point of view, the upper limit of the value is preferably 〇.65/mm or less. Especially in 〇, 6/mm or less is preferable. In addition, the _〇H value of the glass is in the infrared absorbing light of the glass, and the β β -OH value is determined according to the following formula: ^l/xyogiOd/Tz) X: Glass Thickness (mm) Τι: light transmittance in the reference wavelength 3846cm_1 (%) D. 2. Minimum light transmittance (%) near the base absorption wavelength of 3600cm 1 Furthermore, in addition to the above characteristics, the liquid phase temperature is the best At 115 〇 <3 (: or less (especially 113 (TC or less is preferable, especially 11 〇〇. (hereinafter, more preferably), the viscosity in the liquidus temperature is preferably 105.4 dPa · s or more (especially LoWdPa · s or more is preferable. By satisfying this condition, even if it is formed into a plate shape by the lower drawing method, devitrification does not occur, the polishing step can be omitted, and the production cost can be reduced. In a 10% HCl aqueous solution, when the treatment was carried out under the conditions of 8 (TC-24 hours, the amount of erosion was below 1 〇 #m, and in a 1% HCl aqueous solution, the treatment was carried out under conditions of 80 ° C - 1 hour. When the surface was visually observed, no white turbidity and roughness were observed, and when the treatment was carried out in a 130 BHF solution at a temperature of 20 ° C for 30 minutes, the amount of erosion was 〇m at 12 316 263 D01 201213258 'and when at 63 BHF When the solution was used in the solution of 2 (rc_3 〇 minutes), no turbidity or roughness was observed on the surface by visual observation, and a favorable condition was exhibited. Further, the specific elastic modulus is preferably 27.5 GPa/g·cm·3 or more (especially preferably 29_0GPa s or more). By satisfying this condition, the amount of bending of the glass substrate can be reduced. If the glass melt temperature in the viscosity of 102.5 dPa · s is below 1650 ° C, the meltability will be better. Further, a preferred glass composition exemplified by the production method of the present invention can be exemplified by, for example, a mass ratio of si〇2:5〇 to 7〇0/〇,

Al2〇3:10 至 25%、B2〇3:8.4 至 20%、MgO:0 至 10%、CaO:3 至 15%、BaO:0 至 10%、SrO:0 至 ι〇〇/0、ZnO:0 至 10%、 Τι〇2:〇至5%、P2〇5:〇至5%之玻璃。具有此種組成的玻璃, 一般雖然必須施行高溫熔融,但是可獲得如上述作為液晶 顯示器等基板用所要求之應變點、密度、熱膨脹係數、耐 藥性、比彈性係數、熔融性、成型性等特性。以下針對限 定組成範圍的理由進行說明。Al2〇3:10 to 25%, B2〇3:8.4 to 20%, MgO:0 to 10%, CaO:3 to 15%, BaO:0 to 10%, SrO:0 to ι〇〇/0, ZnO : 0 to 10%, Τι〇2: 〇 to 5%, P2 〇 5: 〇 to 5% glass. A glass having such a composition generally has to be subjected to high-temperature melting, but the strain point, density, thermal expansion coefficient, chemical resistance, specific modulus of elasticity, meltability, moldability, and the like which are required for use as a substrate such as a liquid crystal display can be obtained as described above. characteristic. The reasons for limiting the composition range are explained below.

Si〇2含量係50至70%。若少於5〇%時,則耐藥性, 特別係耐酸性將劣化,且頗難達低密度化。反之,若多於 70%時,則高溫黏度升高,熔融性惡化,其同時在玻璃中 容易產生失透異物(白矽石)的缺陷。Si〇2含量最好在58〇/〇 以上,尤以60%以上為佳,又以62%以上為更佳,而且最 好在68%以下’尤以66%以下為更佳。The Si〇2 content is 50 to 70%. If it is less than 5% by weight, the chemical resistance, in particular, the acid resistance will be deteriorated, and it is difficult to achieve a low density. On the other hand, when it is more than 70%, the high-temperature viscosity is increased and the meltability is deteriorated, and at the same time, defects of devitrified foreign matter (white smectite) are easily generated in the glass. The content of Si〇2 is preferably 58 〇/〇 or more, particularly preferably 60% or more, more preferably 62% or more, and most preferably 68% or less, and particularly preferably 66% or less.

Al2〇3含量係1〇至25%。若少於1〇%時,便頗難將應 變點達到640°C以上》況且,Al2〇3具有提昇玻璃彈性係 數,提高比彈性係數的作用,若少於1〇%時,彈性係數便 316263D01 13 201213258 降低。Al2〇3含量最好在12%以上,尤以14 5%以上為佳, 且最好在19%以下,尤以18.〇%以下為更佳。另外,若多 於19%時,液相溫度升.高,耐失透性則降低。 ΒΖ〇3具有助熔劑的作用,乃屬降低黏性、改善熔融性 之成刀但疋,對液晶顯示器中所使用的玻璃基板雖然要 求較高的耐酸性,若ΙΑ越多時耐酸性便有降低的傾向。 B2〇3含量係8.4至20%。若少於8.4%時,則充當助熔劑之 作用將嫌不足,且耐緩衝氫氟酸性惡化。反之,若多於 時,則玻璃之應變點降低,耐熱性降低,且耐酸性惡化。 尤其,因為彈性係數降低,比彈性係數亦將降低^ b2〇3含 1最好在8.6%以上,且最好在15%以下,尤以14。/0以下為 佳,更以12%以下為佳。The Al2〇3 content is from 1〇 to 25%. If it is less than 1〇%, it is quite difficult to reach the strain point above 640°C. Also, Al2〇3 has the effect of increasing the glass elastic modulus and increasing the specific elastic modulus. If it is less than 1〇%, the elastic coefficient is 316263D01. 13 201213258 Lower. The content of Al2〇3 is preferably at least 12%, more preferably 145% or more, and most preferably 19% or less, particularly preferably 18.7% or less. Further, when it is more than 19%, the liquidus temperature rises and the devitrification resistance decreases. ΒΖ〇3 has the function of a flux, which is a tool for reducing the viscosity and improving the meltability. However, although the glass substrate used in the liquid crystal display requires high acid resistance, if the hydrazine is more resistant to acidity, The tendency to decrease. The B2〇3 content is 8.4 to 20%. If it is less than 8.4%, the role as a flux will be insufficient, and the buffer-resistant hydrofluoric acid will deteriorate. On the other hand, if it is more than this, the strain point of the glass is lowered, the heat resistance is lowered, and the acid resistance is deteriorated. In particular, since the modulus of elasticity is lowered, the specific modulus of elasticity is also lowered. ^b2〇3 contains 1 is preferably 8.6% or more, and preferably 15% or less, especially 14. Below /0 is better, and 12% or less is preferred.

MgO含量係〇至1〇%。Mg〇並不致使應變點降低, 而是降低高溫黏性,改善玻璃熔融性。且在鹼土金屬氧化 物中,最具降低密度的效果。但是,若含大量時,則液相 溫度上升,耐失透性降低。況且,因為Mg〇將與緩衝氫 氟酸進行反應而形成生成物’並固著於玻璃基板表面的元 件上,或附著於玻璃基板上,而惟恐此情形有導致白濁的 可能,因而其含量便有所限制。所以,Mg〇含量較佳為〇 至2%,尤以〇至1%為佳,更以〇至〇 5%為佳,特別實質 上以未含者為佳βThe MgO content is 〇 to 1% by weight. Mg〇 does not cause the strain point to decrease, but lowers the high temperature viscosity and improves the glass meltability. And in alkaline earth metal oxides, the effect of reducing density is the most. However, when a large amount is contained, the liquidus temperature rises and the devitrification resistance decreases. Moreover, since Mg 〇 will react with buffered hydrofluoric acid to form a product 'fixed on the element on the surface of the glass substrate, or attached to the glass substrate, but this situation may cause white turbidity, so the content thereof There are restrictions. Therefore, the content of Mg〇 is preferably from 〇 to 2%, particularly preferably from 1% to 5%, more preferably from 〇 to 5%, particularly in the case of non-containing ones.

CaO亦如同MgO,屬於不致使應變點降低,而是降低 向溫黏性,明顯改善玻璃溶融性的成分,其含量係3至 15%。此種無驗性玻璃基板,一般為了能大量供應屬於較 14 316263D01 201213258 難熔融,且廉價的·局品質玻璃基板,在提高其溶融性方面 則為重要。在本發明之玻璃組成系中減少si〇2,係對提高 炼融性為最有效的方法’但是若減少Si〇2之量時,耐酸性 將極端降低’且因為玻璃的密度、熱膨脹係數增加,因此 最好避免。所以’在本發明中,為求提高玻璃的熔融性, 便含有3%以上之CaO。反之,若CaO多於15%時,則玻 璃之耐緩衝氫氟酸性惡化’玻璃基板表面較容易遭受侵 敍’且反應生成物附者於玻璃基板表面上,使玻璃變白濁, 且因為熱膨脹係數變得過高,因而最好避免。CaO含量最 好在4°/❶以上,又以5%以上為較佳,尤以6%以上為更佳, 而且最好在12%以下’尤以1〇%以下為佳,以9%以下為 更佳.。 B aO係屬於提昇玻璃耐樂性、财失透性的成分,含有 0至10%。但是’卻屬於大幅提昇玻璃密度、熱膨脹係數 的成分,在進行低密度化、低膨脹化時,最好盡量不要含 有。況且’就從環境面的觀點而言,也最好不要含太多量。 Ba〇含量最好在5%以下,尤以在2%以下為佳,但是為求 玻璃的低密度化、低膨脹化,最好在1%以下,尤以在〇 1% 以下為更佳。CaO is also like MgO, which is a component that does not lower the strain point, but reduces the viscosity to the temperature and significantly improves the glass meltability, and its content is 3 to 15%. Such an amorphous glass substrate is generally important in order to increase the solubility of the glass substrate which is difficult to melt and which is less expensive than 14 316263D01 201213258. Reducing si〇2 in the glass composition system of the present invention is the most effective method for improving the smelting property. However, if the amount of Si〇2 is decreased, the acid resistance will be extremely lowered' and the density and thermal expansion coefficient of the glass are increased. So it is best to avoid it. Therefore, in the present invention, in order to improve the meltability of the glass, CaO is contained in an amount of 3% or more. On the other hand, if the CaO is more than 15%, the resistance of the glass to the buffered hydrofluoric acid deteriorates. 'The surface of the glass substrate is more susceptible to intrusion' and the reaction product is attached to the surface of the glass substrate to make the glass white and cloudy, and because of the coefficient of thermal expansion. Become too high and therefore best avoided. The CaO content is preferably 4°/❶ or more, more preferably 5% or more, more preferably 6% or more, and most preferably 12% or less, particularly preferably 1% or less, and 9% or less. For better. B aO is a component that enhances the durability and devitrification of glass, and contains 0 to 10%. However, it is a component that greatly increases the density of glass and the coefficient of thermal expansion. When low density and low expansion, it is best not to include it. Moreover, from the point of view of the environment, it is best not to contain too much. The Ba content is preferably 5% or less, and particularly preferably 2% or less. However, in order to reduce the density and the low expansion of the glass, it is preferably 1% or less, more preferably 〇 1% or less.

Sr〇係屬於提昇玻璃耐藥性、耐失透性的成分,含有 0至10%。但是,若含太多量時,玻璃的密度、熱膨脹係 數將上升。SrO含量最好在4%以下,尤以2.7%以下,更 以1.5%以下為佳。 再者’ BaO與SrO乃屬於特別具有提高耐緩衝氫氟酸 15 316263D01 201213258 性(耐BHF性)之性質的成分。所以,在為求提昇耐bhF 性方面,二者成分總量最好含有0.1%以上(尤以0.3%以上 為佳,又以0.5%以上為更佳)。但是,如上所述,若含有 太多BaO與SrO時,因玻璃的密度、熱膨脹係數的上升, 因而總量最好抑制在6%以下。在此範圍内,BaO與SrO 的總量就從提高财BHF性及耐失透性的觀點而言,最好盡 可能地含有大量,反之,就從密度或熱膨脹係數降低、或 環保顧慮的觀點而言,最好盡可能地減少含有量。Sr〇 is a component that enhances glass resistance and devitrification resistance and contains 0 to 10%. However, if too much is contained, the density and thermal expansion coefficient of the glass will increase. The SrO content is preferably 4% or less, particularly 2.7% or less, more preferably 1.5% or less. Further, 'BaO and SrO are components which have a property of improving the resistance to buffer hydrofluoric acid 15 316263D01 201213258 (BHF resistance). Therefore, in order to improve the bhF resistance, the total amount of the components is preferably 0.1% or more (especially preferably 0.3% or more, and more preferably 0.5% or more). However, as described above, when too much BaO and SrO are contained, the total amount of the glass is preferably suppressed to 6% or less because of the increase in the density and thermal expansion coefficient of the glass. In this range, the total amount of BaO and SrO is preferably as large as possible from the viewpoint of improving BHF and resistance to devitrification, and vice versa, from the viewpoint of density or coefficient of thermal expansion, or environmental concerns. In terms of content, it is best to reduce the content as much as possible.

ZnO係屬於改善玻璃基板的耐緩衝氫氟酸性,且改善 溶融性的成分,若含量過多時’則由於玻璃易於失透,應 變點降低’且密度上升’因而最好避免。因此,其含量係 在0至10%,最好0至7% ’尤以5%以下為佳,更以3〇/〇 以下為佳,特別以0.9%以下為佳,而最好在0.5%以下。 含有MgO、CaO、BaO、SrO、ZnO之各成分係藉由 相混合,而明顯地降低玻璃的液相溫度,藉由使玻璃中難 以發生結晶異物’便具有改善玻璃的熔融性、成型性的效 果。但是,若上述各成分之總量過少時,作為助熔劑之作 用將嫌不足’溶融性惡化,且熱膨脹係數變得過低,而降 低與TFT材料間的整合性。反之’若過多時,則密度上升, 除無法達成玻璃基板的輕量化之外,由於比彈性係數降 低’因而最好避免。該等成分之總量最好在6至2〇%,以 6至15%為佳,尤以6至12%為更佳。ZnO is a component which improves the buffer-resistant hydrofluoric acidity of the glass substrate and improves the meltability. When the content is too large, the glass is easily devitrified, and the strain point is lowered and the density is increased, so that it is preferably avoided. Therefore, the content thereof is 0 to 10%, preferably 0 to 7%, particularly preferably 5% or less, more preferably 3 Å/〇 or less, particularly preferably 0.9% or less, and most preferably 0.5%. the following. Each component containing MgO, CaO, BaO, SrO, and ZnO is formed by mixing, and the liquidus temperature of the glass is remarkably lowered, and the melting property and moldability of the glass are improved by making it difficult to crystallize foreign matter in the glass. effect. However, when the total amount of each of the above components is too small, the effect of the flux is deteriorated, and the thermal expansion coefficient is too low to reduce the integrable property with the TFT material. On the other hand, if it is too large, the density is increased, and the glass substrate is not reduced in weight, and the specific modulus is lowered, so that it is preferably avoided. The total amount of the components is preferably from 6 to 2% by weight, preferably from 6 to 15%, particularly preferably from 6 to 12%.

Ti〇2乃屬改善玻璃之耐藥性,特別係改善耐酸性,且 使ifj溫黏性下降並提昇熔融性之成分,但是若含量過多 316263D01 16 201213258 時,則玻璃將產生著色現象,而為了降低透光率,因此並 不。適用於顯示器用之玻璃基板。所以,Ti〇2應限制為〇至 5% ’最好0至3%,尤以〇至1%為佳。 P2〇5係屬於提昇玻璃耐失透性之成分,但是若含量過 多時,由於在玻璃中引起分相、乳白現象,同時耐酸性亦 明顯惡化,因而最好避免。所以,!>2〇5應限制在〇至, 最好為0至3%,%以〇至1〇/〇為佳。 再者,除上述成分之外,在本發明中尚可含有γ 〇 Nb〇〇 τ 3、La2〇3總量在5%左右以内。該等成分雖具有提 ' 點、坪性係數等作用,但是若含量過多時,由於密度 支曾力D,ΓΏ ’因而最好避免。此外,在不損及玻璃特性之前提下, 亦可含有 As2〇3、Sb203、Sb205、F2、Cl2、S03、C、或 、Sl等金屬粉末等澄清劑,總量在5%以内。亦可含有 …长5°/〇以内之Ce〇2、Fe203等之澄清劑。另外,As2〇3 乃破從環保觀點而言,最好不要使用。 接著’詳述本發明之無驗性玻璃的製造方法。本發明 的方法係包含有:調配步驟、熔融步驟、供應步驟、以及成 型步騍。 ,調配步驟係批次準備將玻璃原料調配成具有 Sl〇2、Al2〇3-B2〇3-R〇(R〇 係 MgO、CaO、BaO、SrO、及 : 中1種以上)系之組成的玻璃之步驟。特別係如上述, 最好調配成具有密度2.55g/cm3以下、30至380。(:溫度範 。圍内之平均熱膨脹係數在25至40><1〇-7/。(:、應變點在640 上之特性的玻璃,且依質量百分比計,含有si〇2:5〇 17 316263D01 201213258 至 70%、Al2〇3:l〇 至 25%、B203:8.4 至 20%、MgO:0 至 10%、 CaO:3 至 15%、Ba〇:〇 至 1〇%、SrO:0 至 10%、ZnO:0 至 10%、TiO2:0 至 5%、?2〇5:〇 至 5%的玻璃。 再者,導致失透原因之Zr〇2成分恐將因在後續的’熔融 步驟中,從财火物中的'熔出而增加含有量。重要的是應極 力限制避免Zr02成分混入玻璃原料中’且即便企圖改善化 學财久性等而使用的情況下,其添加量仍必須保留於最小 極限。加強Zr02失透性之Sn02成分係若採用Sn02電極施 行電氣熔融時,恐將因源自電極的熔出而增加含有量。因 此,重要的是應極力限制來自玻璃原料中Sn02的混入, 而且’為求獲得澄清效果等而刻意使用時,其添加量仍必 須保留於最小極限。 熔融步驟係藉由採用高鍅系耐火物的熔融窯,將原料 進行熔融的步驟。高錐系耐火物最好使用耐蝕性優異,且 可長期間使用的Zr02 f缚耐火物。熔融溫度係在上述組成 的無鹼性玻螭時,則約為15〇〇至165〇ΐ。 再者,藉由採用Sn〇,番枝 Ώ &上 電極、pt電極、Μ〇電極等, 接通電加熱施行電氣熔融,# 便可輕易的施行高溫熔融。. 情況下’當然亦可合併使用舌、上+h 义用重油或軋體的燃燒以施行熔 融。另外’電極種類並叙牲如Λ,乂 、,、特別限制,僅要考慮電極壽命 侵蝕程度等因素之後,再決 成疋適當種類即可。此外,所> 用的電極未必僅有1種,亦可―土& ^ 办可在考慮各種條件之後,組, 使用2種以上的電極。例如:當丹炫出於玻璃中而祕 題時,便對電極成分較易炫出的部位採用Ti〇2 is an improvement of the resistance of glass, especially to improve the acid resistance, and to make the ifj temperature viscosity and improve the melting property, but if the content is too much 316263D01 16 201213258, the glass will be colored, and Reduce the light transmission, so it does not. Suitable for glass substrates for displays. Therefore, Ti〇2 should be limited to 5% ‘, preferably 0 to 3%, especially 〇 to 1%. P2〇5 is a component that enhances the devitrification resistance of glass. However, if the content is too large, it is best avoided because it causes phase separation and opalescence in the glass and the acid resistance is also significantly deteriorated. and so,! >2〇5 should be limited to 〇, preferably 0 to 3%, and % is preferably 〇 to 1〇/〇. Further, in addition to the above components, in the present invention, γ 〇 Nb 〇〇 τ 3 may be contained, and the total amount of La 2 〇 3 may be within about 5%. Although these components have the functions of raising the point and the flatness coefficient, if the content is too large, it is preferable to avoid the density of the force D, ΓΏ '. Further, the clarifying agent such as metal powder such as As2〇3, Sb203, Sb205, F2, Cl2, S03, C, or S1 may be contained before the glass characteristics are not impaired, and the total amount is within 5%. It may also contain a clarifying agent such as Ce〇2, Fe203, etc. within 5°/〇. In addition, As2〇3 is broken from the environmental point of view, it is best not to use. Next, the manufacturing method of the non-inspective glass of the present invention will be described in detail. The method of the present invention comprises a compounding step, a melting step, a supplying step, and a forming step. , the mixing step is a batch preparation to prepare the glass raw material to have a composition of S1〇2, Al2〇3-B2〇3-R〇 (R〇MgO, CaO, BaO, SrO, and: one or more) The steps of the glass. In particular, as described above, it is preferably formulated to have a density of 2.55 g/cm3 or less and 30 to 380. (: temperature range: the average thermal expansion coefficient in the circumference is 25 to 40><1〇-7/. (:, the characteristic of the strain point at 640, and in terms of mass percentage, contains si〇2:5〇 17 316263D01 201213258 to 70%, Al2〇3: l〇 to 25%, B203: 8.4 to 20%, MgO: 0 to 10%, CaO: 3 to 15%, Ba〇: 〇 to 1〇%, SrO: 0 Up to 10%, ZnO: 0 to 10%, TiO2: 0 to 5%, ?2〇5: 〇 to 5% glass. Furthermore, the Zr〇2 component causing devitrification causes fear of subsequent 'melting In the step, the content is increased from the melting of the fossils. It is important that the Zr02 component is prevented from being mixed into the glass raw material as much as possible, and even if it is used in an attempt to improve chemical durability, the amount of addition is still It must be kept at the minimum limit. If the Sn02 component that strengthens the devitrification of Zr02 is electrically melted by the Sn02 electrode, it will increase the content due to the melting from the electrode. Therefore, it is important to limit the amount of glass from the raw material. When Sn02 is mixed in, and 'deliberately used for clarification, etc., the amount of addition must remain at the minimum limit. The step is a step of melting the raw material by a melting kiln using a high lanthanum refractory. The high-cone refractory is preferably a Zr02 f-bonded refractory which is excellent in corrosion resistance and can be used for a long period of time. The composition of the non-alkaline glass raft is about 15 〇〇 to 165 〇ΐ. Further, by using Sn 〇, 番 Ώ amp & upper electrode, pt electrode, Μ〇 electrode, etc., electric heating is performed. Electrical melting, # can be easily carried out at high temperature. In the case of course, it is of course possible to combine the use of the tongue, the upper +h heavy oil or the burning of the rolled body to perform the melting. In addition, the 'electrode type is as follows, 乂, 乂, , and special restrictions, only consider the factors such as the degree of erosion of the electrode life, and then determine the appropriate type. In addition, the electrode used is not necessarily only one type, but also the soil and the ^ can be considered After various conditions, the group uses two or more kinds of electrodes. For example, when Dan Xuan is secreted in the glass, it is used in the part where the electrode component is easy to appear.

Sn〇2電極或1N 316263D01 18 201213258 =奋其他部位則使用Pt電極。特別係邮電極乃因為 :杨氧化物所構成,因此即便電極成分溶於玻璃 具有不易對玻璃造成不良影響的特點。 ㈣驟係採用至少其中—部分由翻或1自合金所形 通路’將在熔融窝中熔融的熔融朗供應給成型 、、步驟。利用m自合金形成供應通路 的理由,乃防 更加熔入於玻璃中的情況。此外,加2的熔入不 破璃的失透性,且亦對均f性造成影響。在製作即 便紅研磨仍可使用之破蹲時,便必須提高玻璃的均質 性因而便必須防止因供應通路中的⑽熔入而造成玻璃 污染的情況發生。祕私合金使躲供應祕之事,對 玻璃的均質性維持具有效果。所以,利用舶或麵合金所形 成的核越多越好,理想情況係在與玻璃的接觸面整體均 由翻或齡金所形成者。另外,所謂「供應通路」係指在 炫融熏與成㈣置之間所設置的魏職。包括如澄清 槽、調整槽、麟料、及連結各槽的連職料。此外, 在供應步财不單健麵供祕細設備,最好亦將玻 璃進行澄清均質化。Sn〇2 electrode or 1N 316263D01 18 201213258 =Pt electrode is used in other parts of Fen. In particular, the post electrode is composed of a male oxide, and therefore, even if the electrode component is dissolved in the glass, it is difficult to adversely affect the glass. (4) The step of supplying the molten smelting in the molten nest to at least a portion of the passage formed by the turning or the first alloy is supplied to the forming step. The reason for using m to form a supply passage from the alloy is to prevent further melting into the glass. In addition, the addition of 2 does not affect the devitrification of the glass, and also affects the uniformity. In the case of breakage which can be used even in the case of easy-to-use red grinding, it is necessary to improve the homogeneity of the glass, and it is therefore necessary to prevent the occurrence of glass contamination due to (10) melting in the supply passage. The secret private alloy keeps the secret of supply and has an effect on the homogeneity of the glass. Therefore, the more the core formed by the shell or the surface alloy, the better, and the ideal situation is that the contact surface with the glass is formed by the turn or age. In addition, the so-called "supply channel" refers to the Wei position set between the bright and the smoked and the (four). These include clarification tanks, adjustment tanks, slabs, and joints that connect the tanks. In addition, it is better to clarify and homogenize the glass in the supply of the food.

再者,所謂「利用銘或翻合金所形成的供應通路」, 係指不僅㈣或銘合金成之供應通路 覆蓋耐火㈣面之絲祕。 MB 成塑步驟係將經供應給成型裝置的炼融玻璃成型為 既定形狀的步驟。在顯示器用途方面,可將玻璃採用溢流 下引法、抓孔下引法(slot d〇wn draw pr〇⑽s)、浮式法 316263D01 19 201213258 (floating method)、轉出法(roll out method)等方法成型為薄 板狀。尤其,如以溢流下引法進行成型時,即便未經研磨 仍可獲得表面品質優異之玻璃板,所以屬較佳狀況。 依照上述,便可製得本發明之無鹼性玻璃。 另外’在本發明的製造方法中,就從在成型步驟中的 防止失透之觀點而言,Zr〇2容許量應限制於所得玻璃之含 量依質量百分比計,在0.6%以下,最好在〇 5%以下,尤 以0.3%以下為佳,以0.2%以下為更佳,最恰當為〇 1%以 下。且,最好在0.01%以上’尤以在〇.〇2〇/0以上為最佳。 當所得玻璃中之Zr〇2含量在0.6%以下時,便可改善失透 性。另外,玻璃中之Zr〇2量係可依調配步驟中之21>〇2原 料使用量或雜質管理、熔融步驟中的耐火物溫度管理或電 流量調整、以及供應步驟中之鉑或鉑合金使用面積等因 素,而進行調整。 再者,同樣地,Sn〇2容許量最好在所得玻璃之含量依 質1百分比計,在0.3%以下,尤以〇 28%以下為佳,且, 最好在G.(K)5%以上,尤以在_%以上為佳。若所得玻璃 中之Sn〇2含1在〇.3%以下時,便可大幅抑制因Zr〇2所引 起的失透情況。另夕卜,玻璃中之Sn〇2量係可依調配步驟 中之Sn〇2原料使用量或雜質管理、熔融步驟中的電 極使用支數或電極的溫度管理等因素,而進行調整。 再者,在將玻璃低黏性化而儘可能地改善熔融性之目 的下:最好增加玻璃的水分量。具體而言,依-OH值表 不,最好調整在0.2/mm以上,尤以〇 25/mm以上為佳, 316263D01 20 201213258 更以(U/mm以上為佳 玻璃的水份量方面,可 .mm以上為佳。在調整 化物原料)、在原料中j用選擇含水量較高的原料(如:羥 份量減少之成分的“,分、限制如氣等使玻璃中之水 ,^ ^ φ ,里、在玻璃熔融之際採用氧燃燒而增 加爐内^中料份量、直餘水聽導人_、在溶融 玻璃中施行水蒸氣氣泡等方法而施行。 (實施例1) 表1與2係表示Sn〇2含量對因Zr〇2所引發失透現象 造成影響的實驗結果。玻璃1係依質量%計,含有: SiO2:60% > Al2〇3:15%- Β2〇3:10ο/0 ' CaO:;5% ' BaO:5°/〇 ' SrO:5%,且在密度2.5g/cm3、30至380°C:中之熱膨脹係數 37xl0_7/°C、應變點在655°C之玻璃。玻璃2係依質量%計’ 含有:Si02:64%、Al203:16%、B2〇3:ll%、CaO:8%、SrO:l% ’ 且在密度2.4g/cm3、30至380°C中之熱膨脹係數32x10_7/ °C、應變點在660°C的玻璃。 表1 玻璃1 SnO,含量(質量%) 0.0 0.2 Zr02 含量 (質量%) 0.0 - 0.1 _ - 0.2 - 0.3 - - 0.4 0.5 _ - 0.6 $1000 0.7 1100 0.8 1138 - 0.9 >1180 - 21 316263D01 201213258 表2 玻璃2 Sn02含量(質量%) 0.0 0.2 Zr02 含量 (質量%) 0.0 - 0.1 - 0.2 - ^ 1000 0.3 ^ 1000 ^ 1000 0.4 1100 1107 0.5 1108 1112 0.6 1158 1160 0.7 1182 1186 0.8 >1190 - 0.9 - - 各試料係如下述進行調製。首先’將玻璃原料調配成 使Zr02量與Sn02量變化成如上述之組成。將此原料分批 裝入白金坩鍋中,在1600°C中施行24小時熔融之後而成 型。然後,將所得之玻璃進行粉碎,並通過標準篩30筛孔 (500# m),將50篩孔(3〇〇ym)中所殘留的玻璃粉末裝入始 舟皿中,並在溫度梯度爐(temperature-gradient furnace)中 保持24小時之後再取出。針對所獲得試料,表記著由顯微 鏡觀察玻璃中Zr02· Si02結晶所呈現的最高溫度。另外, 表中之「-」部分係指未調查者。 由上述結果得知,降低BaO等驗土成分而達低密度 化、低膨脹化、高應變點化的玻璃2,較容易以少量之Zr〇2 而失透。而且,確認到Zr〇2含量與Sn〇2含量越高,則失 316263D01 22 201213258 透性越強的趙勢。 (實施例2) 接著,針對本發明方㈣實—態,根_示進;^ 明。第1圖係表示供實施本發明製造方法用的玻璃製…又 備1之概略構造說明圖。 首先’說明玻璃製造設備的構造。玻璃製造"又備〜 具備有:構成溶融玻璃供應源的略裏銀形之炼融蕉2、設置 於該熔融窯2下游端的澄清槽3、設Ϊ於該澄清槽3下游 端的調整槽4、以及設置於該調整槽4下游端的成型裝置 5 ;且熔融窯2、澄清槽3、調整槽4及成型裝置5係勿另J 利用連絡流通路6、7、8而連接。 上述熔融窯2係具有底壁、側璧、及頂壁’該等各壁 係由Z r Ο 2電鑄耐火物等高鍅系耐火物所形成。侧壁係將壁 厚設計成薄型使耐火物易於冷卻。此外’在左右二側的側 壁下端及底壁設置複數對的電極,在左右二側的側壁上端 分別設置複數個燃燒器。在各電極中設有使電極溫度不致 過度上升的冷卻裝置。此外,若對燃燒器使用氧燃燒器施 行氧燃燒加熱時,便可進行更高溫的加熱’且可輕易的增 加玻璃的水分。然後,藉由對電極間施加電力,便可對玻 璃直接通電加熱。另外’藉由將燃燒器的火焰朝向溶融玻 璃上端空間放射,便可從上方加熱熔融破壤。 在上述熔融窯2下游端的側壁形成流出〇,兮、、宁出口 透過在上游端所設置的狹窄的連絡流通路6,而與燦/^熏2 及澄清槽3相連通。 316263D01 23 201213258 上述澄清槽3係具有底壁、侧壁、及頂壁,該等各 係由高㈣耐火物所形成。x,上述連絡流通路^係 底壁、側壁、及頂壁,該等各壁係* Zr〇2電鱗耐火物等古 結系财火物所形成。上述澄清槽3的容積較小·融熏^ 在其底壁與側壁的内壁面(至少接觸到炼融玻璃的内壁面 部位)處,内貼著翻轴合金,在上述連絡流通路6 與側壁之内壁面上亦内貼著鉑或鉑合金。此澄清 上游端的側m上述連絡流通路6的下游^設有 口。澄清槽3主要係實行玻璃澄清的部位,㈣中所 細微氣泡將藉岭澄清射所釋放出的澄錢 」 起,並從玻璃中去除。 人咔 在上述澄清槽3的下游端側壁上形成流出口, 出口透過在上游端具有狹窄的連絡流通路7,而在澄、产柄机 下游端連通於調整槽4。 上述調整槽4係具有底壁、侧壁、及頂壁 係由高錯系耐火物所形成。且’上述連絡流通路&壁 底壁、側壁、及頂壁,該等各壁亦係由Zr02電鑄//、有 高鍅系耐火物所形成。上述調整槽4的底壁與側壁2等 面(至少接觸到炫融玻璃的内壁面部位)處,内貼 壁 Q金,在上述連絡流通路7的底壁與側壁之内 或鉬 貼著鉑痞钿人么, 璧面上亦内 =::〜玻璃的溫度徐緩降低 在上述調整槽4的下游端側壁上形成流出口,、、 ’並將流 316263D01 24 201213258 出口透過在上游端具有狹窄的連絡流 下游端連通於成型裝置5。 8,而在調整槽 成型裴置5係在液晶用板玻璃等顯 型時所採用的板破璃成型裝置,例如溢心=玻= 連絡流通路8的底壁與㈣之内壁面,内貼著料舶合金。 另外,本實施例中所謂「供應流通路」係指從溶融寒 下游所設置的連絡流通路6起’至成型裝置上游端所設置 的連絡流通路8為止。此外,截至此為止,雖例示由溶融 窯、澄清槽、調整槽及成塑裝置各部位所構成的玻璃製造 設備,但是例如亦可在調整槽與成型裝置之間,設置將破 璃攪拌均質化的攪拌槽。而且,上述各設備乃例示將鉑或 始合金内貼於耐火物上的情況,但是當然亦可改為使用由 銘或翻合金本身所構成的設備。 將採用具有如上述構造的玻璃製造設備以製造玻璃 的方法進行說明。 首先,將玻璃原料調配成具有Si〇2-Al203-B2〇3-RO (RO係MgO、CaO、BaO、SrO、及ZnO中1種以上)系之 組成的玻璃。具體而言,將玻璃原料依質量百分比計調配 成含有 SiO2:50 至 70%、A12〇3:1〇 至 25%、Β2〇3:8·4 至 20%、 MgO:0 至 10%、CaO:3 至 15%、Ba〇:〇 至 10%、SrO:0 至 10%、ZnO:0 至 10%、TiO2:0 至 5%、p2〇5:0 至 5%之玻璃。 另外,除上述成分之外,亦可添加澄清劑等各種成分,但 是對Zr02或Sn02成分,盡量避免由玻璃原料中混入則極 為重要。而且,當刻意使用該等成分時,必須在充分考慮 25 316263D01 201213258 從製造設備的混入量之前提下,慎重決定添加量。此外, 當欲增加玻璃之水份量時’便使用如經化物原料。 接著,將已調配好之玻璃原料投入熔融窯2中,進行 熔融、玻璃化。在熔融窯2内對電極施加電壓,而對玻璃 施行直接通電加熱。而且,利用燃燒器的燃燒火焰從上方 對玻璃加熱。依此便在1500至165(TC左右的高溫中將玻 璃熔融。另外’若將側壁與電極充分冷卻而同時施行熔融 時’便可有效的抑制Zr〇2或Sn〇2之熔出。 在熔融窯2中已玻璃化的熔融玻璃,便通過連絡流通 路6而導入澄清槽3中。在熔融玻璃中雖含有在玻璃化反 應時所產生的初期氣泡,但是在澄清槽3中,此初期氣泡 將隨由澄清劑成分所釋放出的澄清氣體,擴大浮起而去除。 澄清槽3中已澄清的熔融玻璃將通過連絡流通路7而 導入於調整槽中。經導入於調整槽4中的熔融玻璃乃屬高 溫’點性偏低’並無法在此狀態下直接利用成型裝置進行 成型°在此便利用調整槽降低玻璃的溫度,調整為適於成 型的黏度。 經利用調整槽4調整過黏性的熔融玻璃,將通過連絡 流通路8而導入溢流下引裝置中,並成型為薄板狀。然後 再施行切斷、端面加工等,便可獲得由無鹼性玻璃所構成 的基板玻璃。 依照上述方法,從熔融窯所得之玻璃,將僅接觸污染 較少的鉑或鉑合金,而不致接觸到高锆耐火物等,而供應 給成型裝置’所以不致引起Zr〇2的過度混入現象。此外, 316263D01 26 201213258 亦可嚴密地控管Sn〇2之含量。而且,針對水分亦可進行 調整。所以,所獲得的無鹼性玻璃,便可形成Zr〇2含量在 〇6/°以下’ Sn〇2含量在0.3%以下,/3-OH值在〇_2/mm以 上的狀態,構成不易引起失透且熔融性優異的玻璃。 (實施例3) ' 接著,針對在本發明方法所製得的玻璃進行說明。 首先,將矽砂、氧化鋁、硼酸、碳酸鈣、硝酸總等玻 璃原料,調配、依質量%計混合成:Si〇2:64%、Al2〇3:16%、 B2〇3.ll%、CaO:8%、SrO:l%之組成。另外,上述原料中 的Zr〇2含量與Sn〇2含量均成為〇 〇1%以下。此外,澄清 劑係使用依Sb2〇3換算為L0%的五氧化銻。 接著’將玻璃原料供應給由高锆系耐火物所構成之熔 融寞’合併使用利用811〇2電極所施行的直接通電加熱與 氧燃燒加熱,在最高溫度165〇ΐ中熔融。接著,在澄清槽、 凋整槽内’將熔融玻璃施行澄清均質化,同時調整為適於 成型的黏度。然後’在贿融玻璃供應給溢流下引裝置並 成型為板狀之後’再經由切斷便獲得〇 7min厚度的玻璃試 料。另外,從熔融窯所得之熔融玻璃,係在僅接觸鉑或鉑 合金之同時,供應至成型裴置。 針對所獲得的玻璃試料,確認&02與Sn02之含量、 及玻璃的/3-oh值’同時針對有無失透性等現象進行評 估。其結果如表3所示。 27 316263D01 201213258 表3 玻璃試料 含量(質量%) Zr02 0.2 Sn02 0.1 召-OH 値(/mm) 450 失透物 無 澄清性(個/kg) 0.1 密度(g/cm3〉 2.4 熱膨張係数 (xlO'7/°C) 32 黏度特性 應變點 670 徐冷點 725 104 1325 103 1500 1〇2.5 1605 玻璃中之Zr02與Sn02含量係利用螢光X線分析進行 確認。 玻璃的 /5 -OH 值係採用 FT-IR(F〇urier transform infrared spectrophotometer,傅立葉轉換紅外線光譜儀)來 測量玻璃的透光率,並依下式求得。 -OH 值^l/xyogiOd/Tz) X:玻璃厚度(mm) Τι:參照波長3846CHT1中之透光率(%) Τ2:在羥基吸收波長3600cm·1附近的最小透光率(%) 失透性係針對所獲得基板玻璃l〇cm2份,利用顯微鏡 觀察有無失透性。 28 316263D01 201213258 澄清性係計數玻璃基板中之100/im以上的氣泡數 量’並藉由換算成平均1kg的氣泡數而進行評估。 密度係利用週知的亞基米得法進行測量。 熱膨脹係數係採用熱膨脹分析儀(dilatometer),測量 30至380°C溫度範圍中的平均熱膨脹係數。 應變點、徐冷點係依據ASTMC336-71之方法進行測 量。 軟化點係依據ASTM C338-73之方法進行測量。此 外,相當於104、1〇3、1〇2·5黏度之各溫度係利用鉑球拉引 法進行測量。 可依照本發明之方法製造的無鹼性玻璃,不僅適用於 顯示器用途,亦可使用於如:電荷耦合元件(CCD)、等倍接 觸式固體影像感測器(CIS)等影像感測器、太陽電池用之玻 璃基板材料。 【圖式簡單說明】 第1圖係本發明製造方法中所使用的玻璃製造設備之 概略說明圖。 【主要元件符號說明】 1 玻璃製造設備 2 炼融窯 3 澄清槽 4 調整槽 5 成型裝置 6,7,8 連絡流通路 29 316263D01In addition, the term "supply passage formed by the use of inscriptions or alloys" means that not only the supply passage of (4) or the alloy is covered with the refractory (four) surface. The MB plastic forming step is a step of molding the molten glass supplied to the molding apparatus into a predetermined shape. In terms of display use, the glass can be subjected to overflow down-draw method, slot d〇wn draw pr〇(10)s, floating method 316263D01 19 201213258 (floating method), roll out method, etc. The method is formed into a thin plate shape. In particular, when molding is carried out by the overflow down-draw method, a glass plate excellent in surface quality can be obtained without polishing, which is preferable. According to the above, the alkali-free glass of the present invention can be obtained. Further, in the production method of the present invention, the Zr〇2 tolerance amount should be limited to the content of the obtained glass in terms of mass percentage, below 0.6%, preferably from the viewpoint of preventing devitrification in the molding step. 〇 5% or less, particularly preferably 0.3% or less, more preferably 0.2% or less, and most preferably 〇 1% or less. Further, it is preferably 0.01% or more, and particularly preferably 〇.〇2〇/0 or more. When the Zr 〇 2 content in the obtained glass is 0.6% or less, the devitrification property can be improved. In addition, the amount of Zr〇2 in the glass can be used according to 21 of the compounding step, 原料2 raw material usage or impurity management, refractory temperature management or current amount adjustment in the melting step, and use of platinum or platinum alloy in the supply step. Adjustments such as area and other factors. Further, in the same manner, the Sn 〇 2 tolerance is preferably in the range of 1% by mass of the obtained glass, preferably 0.3% or less, particularly preferably 〇 28% or less, and preferably at G. (K) 5%. Above, especially above _% is preferred. When Sn 〇 2 in the obtained glass contains 1 or less, 3% or less, the devitrification caused by Zr 〇 2 can be greatly suppressed. Further, the amount of Sn 〇 2 in the glass can be adjusted depending on factors such as the amount of Sn 〇 2 raw material used in the compounding step or the management of impurities, the number of electrodes used in the melting step, or the temperature management of the electrodes. Further, in the case where the glass is made low-viscosity and the meltability is improved as much as possible, it is preferable to increase the moisture content of the glass. Specifically, according to the -OH value, it is better to adjust it to 0.2/mm or more, especially 〇25/mm or more, and 316263D01 20 201213258 is more (U/mm or more is the water content of the glass. More than mm is better. In the adjustment of the raw material), in the raw material, j is used to select the raw material with a higher water content (for example, the component with a reduced amount of hydroxy group), and the water in the glass is limited, such as gas, ^ ^ φ , In the case where the glass is melted, oxygen combustion is used to increase the amount of the material in the furnace, and the direct remaining water is guided by a method such as water vapor bubbles in the molten glass. (Example 1) Tables 1 and 2 An experimental result indicating the influence of the Sn 〇 2 content on the devitrification phenomenon caused by Zr 〇 2. The glass 1 is based on % by mass, and contains: SiO 2 : 60% > Al 2 〇 3: 15% - Β 2 〇 3: 10 ο / 0 ' CaO:; 5% ' BaO: 5 ° / 〇 ' SrO: 5%, and the thermal expansion coefficient of 37xl0_7 / ° C in the density of 2.5g / cm3, 30 to 380 ° C:, the strain point is 655 ° C Glass. Glass 2 is based on % by mass: SiO2: 64%, Al203: 16%, B2〇3: 11%, CaO: 8%, SrO: 1% ' at a density of 2.4 g/cm3, 30 to 380 Thermal expansion coefficient in °C 32x10_7/ °C Glass with strain point at 660 ° C. Table 1 Glass 1 SnO, content (% by mass) 0.0 0.2 Zr02 Content (% by mass) 0.0 - 0.1 _ - 0.2 - 0.3 - - 0.4 0.5 _ - 0.6 $1000 0.7 1100 0.8 1138 - 0.9 >1180 - 21 316263D01 201213258 Table 2 Glass 2 Sn02 content (% by mass) 0.0 0.2 Zr02 Content (% by mass) 0.0 - 0.1 - 0.2 - ^ 1000 0.3 ^ 1000 ^ 1000 0.4 1100 1107 0.5 1108 1112 0.6 1158 1160 0.7 1182 1186 0.8 > 1190 - 0.9 - - Each sample was prepared as follows. First, the glass raw material was prepared so that the amount of Zr02 and the amount of Sn02 were changed to the above composition. The raw material was batch-packed into a platinum crucible, Molding was carried out after melting for 24 hours at 1600 ° C. Then, the obtained glass was pulverized and passed through a standard sieve 30 mesh (500 # m) to remove the glass powder remaining in 50 mesh (3 〇〇 ym). Load into the original boat and remove it in a temperature-gradient furnace for 24 hours. For the obtained sample, the maximum temperature exhibited by the crystal of Zr02·SiO 2 in the glass was observed by a microscope. In addition, the "-" part in the table refers to the uninvestigated person. From the above results, it is known that the glass 2 which is reduced in density, low expansion, and high strain point by reducing the soil component such as BaO is more likely to be devitrified by a small amount of Zr 〇 2 . Moreover, it is confirmed that the higher the content of Zr〇2 and the content of Sn〇2, the more the 316263D01 22 201213258 is more permeable. (Embodiment 2) Next, with respect to the actual state of the present invention, the root_indicates; Fig. 1 is a schematic view showing the structure of a glass made by the method for producing the present invention. First, the construction of the glass manufacturing equipment will be described. The glass manufacturing " is further provided with: a silvery-shaped smelting banana 2 constituting a molten glass supply source, a clarification tank 3 disposed at a downstream end of the melting kiln 2, and an adjustment tank 4 disposed at a downstream end of the clarification tank 3. And the molding device 5 provided at the downstream end of the adjustment tank 4; and the melting kiln 2, the clarification tank 3, the adjustment tank 4, and the molding apparatus 5 are connected by the contact flow paths 6, 7, and 8. The melting kiln 2 has a bottom wall, a side sill, and a top wall. The walls are formed of a sorghum refractory such as a Zr Ο 2 electroformed refractory. The side wall system is designed to have a thin wall thickness to make the refractory easy to cool. Further, a plurality of pairs of electrodes are disposed on the lower end and the bottom wall of the side walls on the left and right sides, and a plurality of burners are respectively disposed at the upper ends of the side walls on the left and right sides. A cooling device is provided in each of the electrodes so that the temperature of the electrodes does not rise excessively. Further, when the burner is subjected to oxy-combustion heating using an oxygen burner, higher temperature heating can be performed and the moisture of the glass can be easily increased. Then, by applying electric power between the electrodes, the glass can be directly energized and heated. Further, by radiating the flame of the burner toward the upper end space of the molten glass, it is possible to heat and melt the soil from above. An outflow enthalpy is formed on the side wall of the downstream end of the melting kiln 2, and the 兮, 宁 outlet passes through the narrow collateral flow path 6 provided at the upstream end, and communicates with the smelting/fuming 2 and the clarifying tank 3. 316263D01 23 201213258 The above clarification tank 3 has a bottom wall, a side wall, and a top wall, and these are formed of a high (four) refractory. x, the above-mentioned contact flow path is a bottom wall, a side wall, and a top wall, and these wall systems are formed by an ancient knot system such as *Zr〇2 electric scale refractory. The clarification tank 3 has a small volume and melts the smoke on the inner wall surface of the bottom wall and the side wall (at least in contact with the inner wall surface of the smelting glass), and the lap shaft alloy is adhered to the venting flow path 6 and the side wall. Platinum or platinum alloy is also adhered to the inner wall surface. This clarification is provided on the side of the upstream end m downstream of the above-mentioned contact flow path 6. The clarification tank 3 is mainly used for the clarification of the glass, and the fine bubbles in (4) will be removed from the glass by the clarification of the clarification shot. The mantle forms an outflow port on the downstream end side wall of the clarification tank 3, and the outlet port has a narrow contact flow path 7 at the upstream end, and communicates with the adjustment groove 4 at the downstream end of the stalking machine. The adjustment groove 4 has a bottom wall, a side wall, and a top wall formed of a high-stagger refractory. And the above-mentioned contact flow path & wall bottom wall, side wall, and top wall, these walls are also formed by Zr02 electroforming//, high lanthanide refractory. The bottom wall of the adjusting groove 4 and the side wall 2 are at the same surface (at least in contact with the inner wall surface portion of the glazed glass), and the inner wall is Q gold, and the bottom wall and the side wall of the connecting flow path 7 or the molybdenum is attached to the platinum.痞钿人,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The downstream end of the contact flow is connected to the forming device 5. 8. In the adjustment of the groove forming device 5, the plate glass forming device used in the stencil type such as the liquid crystal panel glass, for example, the overflow center = glass = the bottom wall of the connecting flow path 8 and the inner wall surface of the (four), Feeding the alloy. Further, in the present embodiment, the "supply flow path" means from the contact flow path 6 provided downstream of the melting cold to the contact flow path 8 provided at the upstream end of the molding apparatus. Further, although the glass manufacturing equipment including the melting kiln, the clarification tank, the adjusting tank, and the plastic forming apparatus has been exemplified as described above, for example, it is also possible to provide homogenization of the glass stirring between the adjusting tank and the molding apparatus. Stirring tank. Further, each of the above-described apparatuses is exemplified by the case where the platinum or the initial alloy is attached to the refractory, but it is of course possible to use a device composed of the original or the alloy itself. A method of manufacturing a glass using a glass manufacturing apparatus having the above configuration will be described. First, the glass raw material is blended into a glass having a composition of Si〇2-Al203-B2〇3-RO (one or more of RO-based MgO, CaO, BaO, SrO, and ZnO). Specifically, the glass raw material is formulated to contain SiO2: 50 to 70%, A12 〇 3:1 〇 to 25%, Β2 〇 3:8·4 to 20%, MgO: 0 to 10%, CaO. : 3 to 15%, Ba〇: 〇 to 10%, SrO: 0 to 10%, ZnO: 0 to 10%, TiO2: 0 to 5%, p2 〇 5: 0 to 5% glass. Further, in addition to the above components, various components such as a clarifying agent may be added, but it is extremely important to avoid the incorporation of the ZrO 2 or Sn02 component from the glass raw material as much as possible. Moreover, when deliberately using these components, it is necessary to carefully consider the amount of mixing from the manufacturing equipment before the 25 316263D01 201213258 is mixed, and carefully determine the amount of addition. In addition, when it is desired to increase the amount of moisture in the glass, a raw material such as a hydride is used. Next, the prepared glass raw material is put into the melting kiln 2 to be melted and vitrified. A voltage is applied to the electrodes in the melting kiln 2, and the glass is directly energized and heated. Moreover, the glass is heated from above by the combustion flame of the burner. Accordingly, the glass is melted at a high temperature of about 1500 to 165 (when the side wall and the electrode are sufficiently cooled while being melted simultaneously), the melting of Zr〇2 or Sn〇2 can be effectively suppressed. The glass-melted molten glass in the kiln 2 is introduced into the clarification tank 3 through the connection flow path 6. The molten glass contains initial bubbles generated during the vitrification reaction, but in the clarification tank 3, the initial bubble The clarified gas released from the clarifier component is removed by expansion and removal. The clarified molten glass in the clarification tank 3 is introduced into the adjustment tank through the collateral flow path 7. Melting introduced into the adjustment tank 4 The glass is a high temperature 'point low' and cannot be directly molded by the molding device in this state. Here, it is convenient to use the adjustment groove to lower the temperature of the glass and adjust it to a viscosity suitable for molding. The adjustment groove 4 is used to adjust the viscosity. The molten glass is introduced into the overflow lowering device through the connecting flow path 8, and is formed into a thin plate shape, and then cut, end surface processing, etc., thereby obtaining an alkali-free glass. Substrate glass. According to the above method, the glass obtained from the melting kiln will be contacted only with less contaminated platinum or platinum alloy, without being exposed to high zirconium refractories, etc., and supplied to the molding apparatus' so as not to cause excessive Zr〇2 In addition, 316263D01 26 201213258 can also strictly control the content of Sn〇2. Moreover, the moisture can be adjusted. Therefore, the obtained alkali-free glass can form the Zr〇2 content at 〇6/ ° "The content of Sn 〇 2 is 0.3% or less, and the / 3-OH value is in the range of 〇 2 / mm or more, and a glass which is less likely to cause devitrification and is excellent in meltability is formed. (Example 3) ' Next, The glass obtained by the method of the invention is described. First, the glass raw materials such as cerium, alumina, boric acid, calcium carbonate, and nitric acid are blended and mixed according to the mass%: Si〇2: 64%, Al2〇3: The composition of 16%, B2〇3.ll%, CaO: 8%, and SrO: 1%. Further, both the Zr〇2 content and the Sn〇2 content in the above raw materials are 〇〇1% or less. Use bismuth pentoxide converted to L0% according to Sb2〇3. Then 'send glass raw materials to The molten ruthenium consisting of high zirconium refractories is combined with direct electric heating and oxycombustion heating by the 811 〇 2 electrode, and melted at a maximum temperature of 165 Torr. Then, in the clarification tank and the septic tank The molten glass is clarified and homogenized while being adjusted to a viscosity suitable for molding. Then, 'after the brittle glass is supplied to the overflow lowering device and formed into a plate shape, 'the glass sample having a thickness of 7 minutes is obtained by cutting off. The molten glass obtained from the melting kiln is supplied to the forming apparatus while being in contact with only the platinum or the platinum alloy. For the obtained glass sample, the contents of &02 and Sn02, and the /3-oh value of the glass are confirmed. 'At the same time, it is evaluated for the presence or absence of devitrification. The results are shown in Table 3. 27 316263D01 201213258 Table 3 Glass sample content (% by mass) Zr02 0.2 Sn02 0.1 Call-OH 値 (/mm) 450 Devitrification without clarification (pieces/kg) 0.1 Density (g/cm3> 2.4 Thermal expansion coefficient (xlO' 7/°C) 32 Viscosity characteristic strain point 670 Xu cold point 725 104 1325 103 1500 1〇2.5 1605 The Zr02 and Sn02 contents in the glass are confirmed by fluorescent X-ray analysis. The /5 -OH value of the glass is FT -IR (F〇urier transform infrared spectrophotometer) to measure the transmittance of glass, and obtain the following formula: -OH value ^l/xyogiOd/Tz) X: glass thickness (mm) Τι: reference Light transmittance (%) at a wavelength of 3846 CHT1 Τ2: Minimum light transmittance (%) in the vicinity of a hydroxyl absorption wavelength of 3,600 cm·1 Devitrification is obtained by observing the presence or absence of devitrification by a microscopic observation of the obtained substrate glass. 28 316263D01 201213258 The clarification system counts the number of bubbles of 100/im or more in the glass substrate and evaluates it by the number of bubbles converted to an average of 1 kg. Density is measured using the well-known sub-mimimeter method. The coefficient of thermal expansion is measured by a dilatometer to measure the average coefficient of thermal expansion in the temperature range of 30 to 380 °C. The strain point and the cold spot were measured in accordance with the method of ASTM C336-71. The softening point was measured in accordance with the method of ASTM C338-73. Further, each temperature corresponding to the viscosity of 104, 1〇3, and 1〇2·5 was measured by a platinum ball drawing method. The alkali-free glass which can be manufactured according to the method of the present invention is not only suitable for display applications, but also can be used for image sensors such as a charge coupled device (CCD), a double contact solid image sensor (CIS), Glass substrate material for solar cells. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic explanatory view showing a glass manufacturing apparatus used in the production method of the present invention. [Explanation of main component symbols] 1 Glass manufacturing equipment 2 Refining kiln 3 Clarification tank 4 Adjustment tank 5 Molding device 6,7,8 Connection flow path 29 316263D01

Claims (1)

201213258 七、申請專利範圍: 1. 一種無鹼性玻璃之製造方法,係包含有:將原料調配成 具有質量百分比計SiO2:50至70%、Al2〇3:10至25%、 B203:8.4 至 20%、MgO:0 至 10%、CaO:3 至 15%、BaO:0 至 0.1%、SrO:0 至 10%、ZnO:0 至 10%、TiO2:0 至 5%、 P2O5:0至5%之組成,密度在2.45g/cm3以下,30至380 °C之溫度範圍内的平均熱膨脹係數在25至36xlO_7/°C 之無鹼性玻璃的步驟;利用採用高锆系耐火物的熔融 窯,將玻璃原料熔融的熔融步驟;利用至少一部分由鉑 或鉑合金所形成的供應通路,將熔融玻璃供應給成型裝 置的供應步驟;以及將供應給成型裝置的熔融玻璃,成 型為既定形狀的成型步驟。 1 316263D01201213258 VII. Patent application scope: 1. A method for manufacturing alkali-free glass, comprising: compounding raw materials into SiO2 with mass percentage: 50 to 70%, Al2〇3: 10 to 25%, B203: 8.4 to 20%, MgO: 0 to 10%, CaO: 3 to 15%, BaO: 0 to 0.1%, SrO: 0 to 10%, ZnO: 0 to 10%, TiO2: 0 to 5%, P2O5: 0 to 5 a composition of %, a density of 2.45 g/cm3 or less, a step of having an average coefficient of thermal expansion of 25 to 36 x 10 _7 / ° C in the temperature range of 30 to 380 ° C; using a melting kiln using a high zirconium refractory a melting step of melting the glass raw material; a supply step of supplying the molten glass to the molding apparatus by using at least a part of a supply passage formed of platinum or a platinum alloy; and molding the molten glass supplied to the molding apparatus into a shape of a predetermined shape step. 1 316263D01
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