TW201143079A - Memory element and store method - Google Patents
Memory element and store method Download PDFInfo
- Publication number
- TW201143079A TW201143079A TW100103409A TW100103409A TW201143079A TW 201143079 A TW201143079 A TW 201143079A TW 100103409 A TW100103409 A TW 100103409A TW 100103409 A TW100103409 A TW 100103409A TW 201143079 A TW201143079 A TW 201143079A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- free
- resistance
- portions
- insulating layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000005641 tunneling Effects 0.000 claims abstract description 48
- 230000005415 magnetization Effects 0.000 claims description 97
- 238000009413 insulation Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 210000000352 storage cell Anatomy 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 338
- 239000011229 interlayer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010019246 | 2010-01-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201143079A true TW201143079A (en) | 2011-12-01 |
Family
ID=44319346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100103409A TW201143079A (en) | 2010-01-29 | 2011-01-28 | Memory element and store method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5197856B2 (ja) |
| KR (1) | KR101455483B1 (ja) |
| TW (1) | TW201143079A (ja) |
| WO (1) | WO2011093363A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110268515A (zh) * | 2018-01-12 | 2019-09-20 | Tdk株式会社 | 磁壁移动型磁记录元件及磁记录阵列 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666339B (zh) * | 2017-03-28 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 磁性随机存储器及其存储单元的制造方法 |
| US20230060680A1 (en) * | 2020-03-26 | 2023-03-02 | Nippon Telegraph And Telephone Corporation | Materials exhibiting transport properties specific to weyl fermions and magnetresistance devices based on such materials |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2879349B1 (fr) * | 2004-12-15 | 2007-05-11 | Thales Sa | Dispositif a electronique de spin a commande par deplacement de parois induit par un courant de porteurs polarises en spin |
| JP2006287081A (ja) * | 2005-04-04 | 2006-10-19 | Fuji Electric Holdings Co Ltd | スピン注入磁区移動素子およびこれを用いた装置 |
| JP2007201059A (ja) * | 2006-01-25 | 2007-08-09 | Toshiba Corp | 磁気素子、磁気記録装置及び書き込み方法 |
| KR101168285B1 (ko) * | 2006-12-29 | 2012-07-30 | 삼성전자주식회사 | 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법 |
| US8040724B2 (en) * | 2007-08-03 | 2011-10-18 | Nec Corporation | Magnetic domain wall random access memory |
-
2011
- 2011-01-27 WO PCT/JP2011/051569 patent/WO2011093363A1/ja active Application Filing
- 2011-01-27 JP JP2011551892A patent/JP5197856B2/ja not_active Expired - Fee Related
- 2011-01-27 KR KR1020127019995A patent/KR101455483B1/ko active IP Right Grant
- 2011-01-28 TW TW100103409A patent/TW201143079A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110268515A (zh) * | 2018-01-12 | 2019-09-20 | Tdk株式会社 | 磁壁移动型磁记录元件及磁记录阵列 |
| CN110268515B (zh) * | 2018-01-12 | 2023-10-17 | Tdk株式会社 | 磁壁移动型磁记录元件及磁记录阵列 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101455483B1 (ko) | 2014-10-27 |
| JP5197856B2 (ja) | 2013-05-15 |
| WO2011093363A1 (ja) | 2011-08-04 |
| JPWO2011093363A1 (ja) | 2013-06-06 |
| KR20120109598A (ko) | 2012-10-08 |
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