KR101455483B1 - 기억 소자 및 기억 방법 - Google Patents

기억 소자 및 기억 방법 Download PDF

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Publication number
KR101455483B1
KR101455483B1 KR1020127019995A KR20127019995A KR101455483B1 KR 101455483 B1 KR101455483 B1 KR 101455483B1 KR 1020127019995 A KR1020127019995 A KR 1020127019995A KR 20127019995 A KR20127019995 A KR 20127019995A KR 101455483 B1 KR101455483 B1 KR 101455483B1
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KR
South Korea
Prior art keywords
layer
free
free magnetic
insulating layer
resistance state
Prior art date
Application number
KR1020127019995A
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English (en)
Korean (ko)
Other versions
KR20120109598A (ko
Inventor
유키오 기쿠치
Original Assignee
가부시키가이샤 알박
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Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20120109598A publication Critical patent/KR20120109598A/ko
Application granted granted Critical
Publication of KR101455483B1 publication Critical patent/KR101455483B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020127019995A 2010-01-29 2011-01-27 기억 소자 및 기억 방법 KR101455483B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010019246 2010-01-29
JPJP-P-2010-019246 2010-01-29
PCT/JP2011/051569 WO2011093363A1 (ja) 2010-01-29 2011-01-27 記憶素子及び記憶方法

Publications (2)

Publication Number Publication Date
KR20120109598A KR20120109598A (ko) 2012-10-08
KR101455483B1 true KR101455483B1 (ko) 2014-10-27

Family

ID=44319346

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127019995A KR101455483B1 (ko) 2010-01-29 2011-01-27 기억 소자 및 기억 방법

Country Status (4)

Country Link
JP (1) JP5197856B2 (ja)
KR (1) KR101455483B1 (ja)
TW (1) TW201143079A (ja)
WO (1) WO2011093363A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108666339B (zh) * 2017-03-28 2020-11-13 中芯国际集成电路制造(上海)有限公司 磁性随机存储器及其存储单元的制造方法
WO2019138535A1 (ja) * 2018-01-12 2019-07-18 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
WO2021192128A1 (ja) * 2020-03-26 2021-09-30 日本電信電話株式会社 ワイルフェルミオンの輸送現象を発現する物質および磁気抵抗素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7532502B2 (en) * 2005-04-04 2009-05-12 Fuji Electric Holdings Co., Ltd. Spin injection magnetic domain wall displacement device and element thereof
US20090273421A1 (en) * 2004-12-15 2009-11-05 Thales Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201059A (ja) * 2006-01-25 2007-08-09 Toshiba Corp 磁気素子、磁気記録装置及び書き込み方法
KR101168285B1 (ko) * 2006-12-29 2012-07-30 삼성전자주식회사 자구벽 이동을 이용한 정보 저장 장치 및 그 제조방법
WO2009019947A1 (ja) * 2007-08-03 2009-02-12 Nec Corporation 磁壁ランダムアクセスメモリ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090273421A1 (en) * 2004-12-15 2009-11-05 Thales Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers
US7532502B2 (en) * 2005-04-04 2009-05-12 Fuji Electric Holdings Co., Ltd. Spin injection magnetic domain wall displacement device and element thereof

Also Published As

Publication number Publication date
JP5197856B2 (ja) 2013-05-15
TW201143079A (en) 2011-12-01
WO2011093363A1 (ja) 2011-08-04
KR20120109598A (ko) 2012-10-08
JPWO2011093363A1 (ja) 2013-06-06

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