TW201142936A - Apparatus and methods for cyclical oxidation and etching - Google Patents

Abstract

Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Description

201142936 VI. Description of the Invention: Field of the Invention The embodiments of the present invention generally relate to the field of semiconductor fabrication processes and semiconductor components, and more particularly to devices for fabricating components suitable for narrow pitch applications. And methods. [Prior Art] Reducing a semiconductor element by simply shrinking the element structure generally does not produce an acceptable small-sized structure. For example, in nand flash memory, when the floating gate is shrunk, the capacitive coupling of the floating gate (for example, the sidewall phantom is also reduced with the surface area of the floating idler, therefore, the floating gate The smaller the surface area, the smaller the capacitive coupling between the floating pole and, for example, the control gate. In general, if the NAND flash memory can still operate, the capacitive coupling is sacrificed for the sake of reduction. The choice is acceptable. Unfortunately, when the component node becomes small enough, the capacitance between the floating pole and the control closed pole becomes too small to operate effectively at an allowable operating voltage. In this component, the county is reduced, and the 疋 is limited. Moreover, the increase in parasitic capacitance (for example, noise) between adjacent floating poles exceeds the NAND flash core. It is not possible to have a functional flash memory under the erroneous limit conditions... Here, methods and devices for manufacturing and designing elements of the N-element and other components having a smaller surface area are provided. 42936 SUMMARY OF THE INVENTION Apparatuses and methods for fabricating semiconductor components suitable for use in narrow pitch applications are described herein, although the various components and methods described herein are not intended to be limiting to the fabrication of particular types of components, but are described herein. The apparatus and method are particularly suitable for fabricating a semiconductor component including a floating gate having a first width near a bottom surface of the floating gate that is greater than a second width near the top of the floating gate. In some embodiments, the width of the floating gate is non-linearly reduced from the first width to the first width. In some embodiments, the apparatus for processing a substrate can include: a process chamber 'the process chamber has a substrate support disposed therein, and the substrate support is disposed to support a substrate, the substrate support further having a temperature control system coupled to the substrate support for controlling the temperature of the substrate support to be close to a first temperature; a gas source for providing at least one oxygen-containing gas, an inert gas, and an etching gas, plasma gas Source, the plasma gas source is lightly connected to the process chamber to provide energy to the gas supplied by the gas source to form at least one of oxidized electricity or (iv) plasma; and _ heat source, the heat source Connecting to the process chamber 'to provide energy to the substrate, and selectively increasing the temperature of the substrate to a second temperature above the first temperature. Other and further embodiments of the invention are described below According to - or more embodiments, a complete process procedure for oxidation (and/or nitridation) and a tactile step can be performed in the chamber in less than about 3 minutes in less than about 3 minutes. In a particular embodiment, less Complete processing of the oxidation and/or nitridation and etching steps in the chamber in about 2 minutes, and in more specific embodiments, in less than about ! minutes, such as 45 seconds or 3 seconds, A complete process sequence for the oxidation and/or nitridation and etching steps in the chamber. [Embodiment] An apparatus and method are described herein for oxidizing a surface of a material layer of a semiconductor 7L member in a single chamber for forming an oxide layer, and removing at least a portion of the oxide layer by etching. Although the invention is not limited to a particular component, the described apparatus and method can be used to fabricate semiconductor components and structures suitable for narrow pitch applications. A narrow pitch application as used herein includes a half pitch of 3211111 or less (e.g., a 3211 jaw or smaller component node). The term "pitch" as used herein refers to a measurement between a parallel structure or an adjacent structure of a semiconductor element. The spacing can be measured from one side to the other on the same side of the parallel or parallel parallel structure. Of course, the semiconductor components and structures can also be used in applications with larger pitches. The semiconductor component can be, for example, a NAND or nor flash memory, or other suitable component. In some embodiments, the semiconductor component can maintain or improve sidewall capacitance between the floating gate and, for example, the control gate of the component, thereby reducing interference between adjacent floating gates in adjacent components. (ie, noise). The apparatus and method of the present invention as disclosed herein can effectively limit the undesired operation of the oxygen diffusion by 'for example oxygen diffusion', such as during the process, such as thickening the tunnel oxide layer during the process, which may be beneficially The apparatus and methods of the present invention are provided to fabricate other components or structures, such as fin field effect transistor (WnFET) components, hard reticle structures, or other structures to overcome the critical dimension limitations imposed by conventional lithographic patterning. Unless otherwise explained, it is to be understood that the specific oxidizing and etching apparatus and processes disclosed herein for forming a structure can be used to form any other structure disclosed herein. Accordingly, embodiments of the present invention provide apparatus and methods for performing cyclic oxidation and button engraving of a layer in a single chamber or tool, the apparatus and method capable of performing the processes in a separate chamber or tool The amount of output that is still needed. When it is desired to perform a plurality of cycles of oxidation and etch processing in the separation chamber, the output time is caused by the transmission time inside the chamber. If you provide a chamber or work that can perform multiple processes, you can increase throughput. However, it is still unbelievable to obtain a chamber capable of performing multiple etching and oxidation processes requiring very different temperatures. Roots: - or multiple embodiments, provide several chambers or tools that can rapidly heat and cool the substrate in a single chamber, thus allowing for cyclic oxidation and/or gasification and remnant processes to be performed. In one or more embodiments, the process chamber disclosed herein can be in less than 5 minutes, less than 4 minutes, less than 3 minutes, φ, ^ within 2 minutes, less than 1 minute 'Single oxidation and etching cycles as described herein are performed in less than 3 sec. In one or more embodiments φ, -Γ gu . Also listed, 'the oxidation process can be performed at a temperature between about TC and 800 ° C, more specifically about a fan. c to 働. The temperature between c is 201142936 at a temperature lower than about (10) Execution - part of the engraving process is more specifically less than about 120. (:, and more ^ ^ * 笪 acknowledgment, will be below or 4 to about loot: one or more implementation side The etching process utilizes a dry (four) process using electropolymerization, such as containing an I-excitation, and the etching process includes a process performed below less than about a thief, specifically less than about 4 〇 c ' and more specifically In the range of about 25 ti, then a step is performed at a temperature exceeding the combat, for example in the range of about (10) ° C to about 200 ° C. The apparatus and/or using the present invention will be described below with reference to FIG. Method Example An example of a semiconductor device fabricated by the semiconductor device is an illustrative application of the memory device 100. The memory device 1 includes a substrate 102 on which a tunnel oxide layer 1〇4 is deposited. The gate 106 is deposited on the pass-through oxide layer 104. The floating gate 1〇6 and the tunnel oxide layer 10 4 and the lower portion of the substrate 102 may comprise cells 1 〇 3 (or memory cells) of the memory component 100. Each cell of the memory component is separate. For example, in the memory component ,, the shallow A trench isolation (STI) region 108 is disposed on the substrate 102 between each cell (eg, adjacent to the via oxide layer 1〇4 and the floating gate 1〇6, where the STI region 108 The cell 1〇3 is separated from the adjacent cells 1〇5 and 1〇7. The memory device 1 further includes an inner polycrystalline silicon dielectric (IPD) layer 110, the IPD layer 11 The 〇 is disposed above the floating gate 1〇6 and the control gate layer 112. The IPD layer 11 分隔 separates the floating gate 1 〇6 from the control gate layer 112. The substrate 102 may include a suitable material. For example, crystallization enthalpy (for example, 矽201142936 100 or Shi Xi <111>;) 'Secondary oxide eve, strained stone eve, Shi Xihuan, substituted or undoped polycrystalline shi, doped or Undoped shredded wafers, patterned or unpatterned wafers, second insulator (SOI), carbon-doped cerium oxide nitride, mixed Miscellaneous stone, wrong, stone, sapphire, etc. In some embodiments, the substrate 102 comprises a stone eve. The enthalpy oxide layer 104 may comprise a stone and an oxygen, such as a dioxide dioxide (Si 〇 2) a dielectric material of nitrous oxide (Sl〇N) or 胄k value, such as aluminum (A1), yttrium (Hf) or lanthanum (La), or (zr) oxide or Oxide oxide, or Ny single or stacked structure (for example, dioxide dioxide / high value / - oxidized stone eve), etc. The enthalpy oxide layer 1 〇 4 may have any suitable thickness, for example , between about 5 to about 12 nm. The pass-through oxide layer 1〇4 may have substantially the same width as the bottom surface of the floating gate 1〇6 in each cell. The STI region 1G8 may be encapsulated with oxygen, such as dioxo (SiO 2 ), bismuth oxynitride. (SiON) and so on. The floating gate 1 0 6 generally includes a special mine # κ ., 匕 3 conductive material, such as polysilicon, metal, and the like. The floating room (four) 6 has a configuration suitable for assisting in the placement of a portion of the control interlayer layer 112 between adjacent units (e.g., between units 1〇3, 105 and 107). Therefore, the floating gate is formed into a "D". As used herein, the term "inverted T" generally means that the upper portion of the floating gate (10) is convex with respect to the bottom surface of the floating gate 1G6. The embossed structure provides space for the 1PD@110' to form the (four) layer 11G' above the floating interpole 106 without completely filling the gap between the adjacent floating interpoles 1 〇 6 and thus allowing - part The control idle_112 can be placed between adjacent floating gates 106. 201142936 For example, as shown in Fig. 1, the floating gate 106 is generally represented by a reversed shape having a bottom surface 115 and a stem 113 (or an upper portion of the floating gate 106). The floating gate 1〇6 can generally have any desired size for a particular application. In some embodiments, the height of the floating gate 106 can be between about 2 〇 and about 1 〇〇 nm. In some embodiments, the thickness of the bottom surface 115 can be less than or equal to about 35 nm. Due to the protruding structure of the upper portion of the floating gate 106, the floating gate 106 has a first width 1〇9' near the bottom surface 115 of the floating gate 1〇6. The first width 109 is larger than the floating gate. The second width ill above ι〇6. In some embodiments, the ratio of the first width 1〇9: the second width 111 is at least about 2:1. In some embodiments, the first width i 〇 9 is greater than the first width 111 by more than about 4 nm or more, or about 6 nm or more, or between about 4 and about 6 nme, the width of the floating gate 1 〇 6 is The bottom surface 115 of the eight floating gates 35丨〇6 may be linear, non-linear, continuous, non-continuous, and altered in any manner. In some embodiments, as illustrated in Figure i, the width of the floating gate 106 is non-linearly varied between a first width 1 〇 9 and a second width 111. In some embodiments, the first width can be less than about 35 nm, or between about 2 〇 to about Μ nm. The second width can range from 5 to about 30 nm, for example, 5 nm, 10 nm, 12 nm, 13 nm, 14 η m 1 5 nm, 20 nm, 25 nm, or 30 nm. Weeping ^ illustrated in Figure 1, the trunk 113 has a side wall portion having a cross-sectional vertical profile. In some embodiments, the substantially vertical is at or equal to about 1 degree of vertical, or less than or equal to about $degree of vertical, or less than or equal to about 1 degree of vertical. The substantially vertical dimension of the sidewall 10 201142936 can be as high as about 40% or greater than about 40% of the total height of the floating gate 106. In some embodiments, the substantially vertical profile may be greater than about 40% of the total height of the floating questioner 106. In some embodiments, the substantially vertical profile is between about 20 and about 1 〇〇 nm. The IPD layer 11 can comprise any suitable single or multi-layer dielectric material. The single layer of IPD contains the above related to the tantalum oxide layer 1〇4 as described above.

Si〇2, SiON, high-k dielectric materials, and the like. A non-limiting example of a multilayer IPD is a multilayer oxy-nitrogen-oxygen (oxide) layer comprising a first oxide layer, a nitride layer, and a second oxide layer. The first and second oxide layers typically comprise cerium and oxygen, such as cerium oxide (Si 〇 2), cerium oxynitride (SiON), and the like. The nitride layer typically contains germanium and nitrogen, such as tantalum nitride (SiN) and the like. In some embodiments, it is also possible to use Si〇2/high.

The multilayer ipD layer of Si〇2 (for example, SiO 2 /Al 203 / SiO 2 ) serves as the IpD layer no. In some embodiment 10, the IPD layer 11 is deposited to a thickness of between about η and about 15 nm. The conformal deposition of the IpD layer 11 on the inverted gate-shaped floating gate 106 helps to form the wall 11 in the deposited ipD layer. The wall 11 4 is formed between adjacent floating gates. In a two embodiment, the wall i 丨 4 has a width of between about 4 nm and about 2 〇, and a depth of between about 20 and about 90 nm. Alternatively, the degree of depth of IpD penetration between adjacent dirty gates can be defined by depositing a layer of material (eg, Si〇2) to fill adjacent regions before depositing the IPD. The gap between the floating gates, and the material layer is planarized by, for example, chemical mechanical planarization (CMP) to remove the excess material that falls above the floating interpole 106 by the 201142936 to kick the 'will phase$ The material remaining in the gap between the poles is etched to - desired to set the degree of penetration between the floating idlers. Ice deposits a control gate layer 112 on top of the IPD layer 11 and the wall (1) to form a control gate. The control gate layer i 12 typically contains an interstitial such as polycrystalline, metal or the like. The additional wall 114 provides a controlled larger surface area at the sidewall of the proximity pole 106. Controlling the surface area of the closed layer 112 by the aid of the wall 114 can improve the electrical transfer between the sidewalls of the floating gate 106 and the control gate. In addition to this, the wall 114 deposited between adjacent floating gates (eg, element 103 and the floating idler of cell 105) reduces parasitic capacitance, floating gate interference between adjacent inter-electrode poles. , noise, and so on. For the same floating gate height I, the approximate rectangular shape is compared to: the floating shape of the floating gate (four) 6 can reduce the surface area. The cross-sectional area of the reduced J can advantageously reduce the parasitic capacitance between adjacent floating gates in the direction of the bit line (e.g., in different word lines of the memory element and in the same bit line). Advantageously, the side wall capacitance between the floating interpole and the control gate can be independently controlled (e.g., maintained to a desired degree) by controlling the degree of floating gate homogeneity. Figure 2 is a diagram illustrating a method for fabricating a semiconductor device having a floating gate geometry in accordance with some embodiments of the present invention. The method described herein can be performed in any suitable single chamber. This suitable single chamber configuration is used for oxidation and etching, and has the ability to be processed at different degrees of brewing. In accordance with one or more embodiments, in the process of oxidizing and etching, the etching is performed at a relatively high temperature and etching is performed at a relatively low temperature. For example, or in embodiments, 纟5m: and 高于 仃 高于 高于 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 氧 氧 氧 氧 氧 氧 氧 氧For example, a partial etching process can be performed at low temperatures, such as room temperature, such as scratching, 25t or 3 (rc. It should be understood that at higher temperatures, for example up to about 7 rc. After (d), the expected elevated temperature is About 1 〇〇c for sublimation of compounds, as will be described in more detail below. The aspect of the invention is suitable for performing an oxidation process in a single-chamber, silver μ (four) and sublimation Q can be m-' rapid thermal oxidation ( The oxidation process is performed by RT 〇, radical oxidation, etc. A suitable oxidation chamber contains an electropolymerization chamber, such as an ion immersion ion implantation (plasma Immersion Ion)

ImPlantation; P3I) or decoupled plasma oxidation (Dp〇). Alternatively, a thermal oxidation chamber can be used, such as the rADIANCE®, Vantage<s RADOX chamber sold by Applied Materials, Inc., located in Santa Clara, Calif., or including remote and/or close-range plasma sources. Burning stove. An exemplary thermal oxidation process can be performed using various oxidation chemistries that include varying the concentration of reducing gas such as one or more hydrogen (helium, ammonia (NH3), etc. in the oxidizing gas mixture, the oxidizing gas exhibit The composition comprises an oxidizing gas 'eg one or more of oxygen (〇2), nitric oxide (NO), nitrous oxide (n2〇), and the like, and optionally an inert gas, such as one or more of nitrogen ( N2), argon (Ar), helium (He), etc. An exemplary plasma oxidation process may use any oxidation chemistry as described in the thermal oxygen 13 201142936 process, with or without a heating chuck ( The plasma oxidation process is performed under heating chuck. A photochemical process can also be applied, such as using an oxygen species (such as oxygen) to form an oxide layer in the presence of ultraviolet light (UV), or applying a wet chemical oxidation such as using chemistry. a solution containing nitric acid (HNO3), other acids suitable for oxidation. However, typically these chambers are configured to perform only an oxidation process and are not configured to perform low temperature processing, For example, low temperature etching. Therefore, it is necessary to modify these chambers to achieve the rapid temperature changes required between oxidation and etching. Specific details are provided below. Or 'can be performed in any suitable and modified etching chamber In the method embodiments described herein, the etch chamber is configured for wet or dry etching, reactive ion etching (RIE), etc. An exemplary etch chamber includes an application located in Santa Clara, California. SICONITM, Producer® or CarinaTM chambers sold by Materials Co., Ltd. A non-limiting alternative dry etching process consisting of ammonia (NH3) or nitrogen trifluoride (7) gas or anhydrous hydrogen fluoride with far-end plasma ( HF) a gas mixture which can condense on cerium oxide at a low temperature (for example, about 3 〇〇c) of an anhydrous hydrogen fluoride (HF) gas mixture' and the reaction can form at moderate temperatures (for example, greater than 100. (:) The sublimated compound 'used to etch cerium oxide. This exemplary money engraving process can be reduced over time and will eventually reach saturation at one point' at that point unless there will be one Part of the compound removal (for example, by the sublimation process described above) 'otherwise no further silver ingots can be produced. It can be controlled using the above mechanism and/or by a timed etching process (eg, etching for a predetermined period of time) The etching process can be exemplified by the wet etching process of 201142936. The exemplary plasma or remote plasma etching process 3 or etchant, such as carbon tetrafluoride (CF4), trifluoromethane ( CHF3), sulfur hexafluoride (SF6), hydrogen (Η:), etc. and can be performed with or without a heated chuck. For different material compositions (eg, uneven surface, etc.) The selectivity of the button is controlled from about i to about 1000. For example, in some embodiments, in the case of a sulphur dioxide, the selectivity to the singular (four) etch may be about when the (four) rate drops to the initial etch. At about 0% to about 90%, or to about 75% of the rate, the etch can be terminated to provide thickness control of the buttoned material. For example, the termination (four) process as described above in a real-time example provides thickness control for the characterization. The above control is particularly beneficial when etching is deposited on an oxide layer on an inhomogeneous material (e.g., comprising tantalum and niobium dioxide). A residual chamber, such as a SIC0NI chamber, would need to be modified to perform an oxidation process in the chamber, as described in more detail below. Thus, the method 200 performed in a single chamber begins in step 202 where a substrate is provided - the substrate has a layer of material that will become a floating gate. For example, as shown in Figure 3A, substrate 1〇2 and material layer 304 can be part of a partially fabricated memory component. The memory cell #3〇〇 may include a substrate 1?2 having a pass-through oxide layer 1?4 disposed on the substrate 102. A material layer 3〇4 is deposited over the tantalum oxide layer 1()4. A shallow trench isolation (STi) region 302 (like the m region 108) is deposited adjacent to the via oxide layer and material layer 304. After the method 2 begins, other fabrications are performed to provide the substrate and the partially fabricated memory device 3〇〇. The method of 201142936 includes depositing an insulating material (eg, hafnium oxide) in the STI region 302; Flattening the level of the insulating material with the upper surface of material layer 304; and etching the insulating material down to a desired level to create a substrate having material layer 304, and in accordance with the techniques provided herein The material layer 304 is prepared to be treated as a floating gate. Material layer 304 can comprise a conductive material such as polysilicon, metal, or the like. Material layer 304 typically has a slightly trapezoidal or rectangular cross section. The material layer 3〇4 typically has a suitable starting shape such that when oxidized and/or etched by the methods described herein, the material layer 3〇4 can be as described above in connection with FIG. Inverting the T-shaped floating gate (eg, patterning and etching the material layer 304 to help form the STI structure 3〇2, and the resulting profile of the material layer 304 can be further processed as described herein) Starting point). As shown in FIG. 3B, in step 2〇4, the material layer 3〇4 is selectively oxidized to form an oxide layer 3〇6, and an oxide layer 3〇6 is formed over the material layer 304 and on the sidewalls. And the oxide layer 3〇6 may contain cerium oxide, a metal oxide, or the like. In some embodiments, the oxide layer 306 can consume a layer of material 3〇4 to a depth of about 3 to about nm5 nm, or about 1 nm. The 'oxide layer 3〇6 as shown in Fig. 3B may further consume (or otherwise erode or replace) a portion of the STI region 302. Oxidation can be formed using wet or dry oxidation, rapid thermal oxidation (RT〇), free radical deuteration, plasma oxidation (eg, decoupled plasma oxidation (Dp〇)), or any other oxidation process described herein. Layer 306. In some embodiments where a low thermal budget and/or reduced oxygen diffusion is desired, plasma oxygen or radical oxidation can be used. During the enthalpy of emulsification of material layer 304, a low thermal budget is required to avoid the discriminating effect of the ruthenium oxide layer 104. As used herein, the low heat budget represents a thermal budget for furnace operation of less than tens of minutes at a peak of 85 〇t. Next, as illustrated in Fig. 3C, in step 2 〇6 +, the oxide layer 306 is removed by an etching process in the same chamber as the oxidizing step 204. After oxidation of material layer 304 and removal of oxide layer 306, the residual portion of material layer 304 is typically in the shape of an inverted τ, for example, a shape similar to floating gate 1 〇 6 depicted in FIG. The etching process may use a chemical reagent or gas. The gas may include hydrofluoric acid (HF), hydrochloric acid (HC1), or other etching processes disclosed herein. The hexene is selectively selective, for example, to selectively remove the oxide layer 306. In an embodiment +, the etching process is selective to cerium oxide and the oxide layer 306 having cerium oxide can be removed relative to the material layer comprising polysilicon. The etching process may further remove a portion of the STI region 3〇2 during the removal of the oxide layer 3〇6. After the etching process is completed to form a floating interpole having a inverted shape, the method 200 generally ends here. Further processing of the memory component can include deposition of the IPD layer and the control gate layer, similar to the IPD layer described in Figure 1 and the control gate layer. In some embodiments, the regions between adjacent material layers 3〇4 and above the sti region 302 are filled with a gap fill material, such as hafnium oxide or containing STI regions 302, in the deposition of the IPD layer. The same material. The filled region 17 201142936 can then be planarized by chemical mechanical planarization (CMP), or any suitable planarization method, to substantially planarize the region above the material layer 304. After the gap fills and chemical mechanical planarization, the gap fill material is then etched to set the desired penetration depth of the ipD between the material layers 304 of (4) prior to deposition of the IPD layer. Alternatively, as depicted in Figure 4, method 4A can be used to form a floating gate having an inverted τ shape. The method 400 is illustrated with reference to Figures 5A through 5E, which illustrate the stage of fabrication of the memory element 300 in accordance with an embodiment of the method 4A. Method 4 includes depositing a sacrificial nitride layer, and during the oxidation process to oxidize the material layer 3 〇4, a sacrificial nitride layer can be used to limit the diffusion of oxygen. It is desirable to limit the diffusion of oxygen during the oxide layer removal process as described below to avoid undesired thickening of the passivated oxide layer 104 and/or to avoid undesired removal of the pass-through oxide layer 104 and/or Or STI region 302 (or gap fill material). The method 400 generally begins in step 4A2, in which a partially fabricated memory element 3A as shown in FIG. 5A is provided. The memory element 300 has been described above, and the memory element 3 includes a substrate 丨〇2 having a through-silicon oxide layer ι 4 disposed on the substrate 1 以及 2 and having a ruthenium oxide disposed therethrough The material layer 3〇4 above the object layer 1〇4. The suffix element 300 further includes a sti layer 302 disposed in the substrate 1〇2 and adjacent to the tantalum oxide layer 104 and the material layer 3〇4. As shown in Fig. 5C, in step 4〇4, a nitride layer 5〇2 is formed on the exposed surface of the material layer 304 and the STI region 202. The nitride layer 502 can be formed by any suitable nitridation process, such as plasma nitridation or tantalum nitride deposition. The nitride layer 502 comprises tantalum nitride (siN), nitrogen oxides 201142936 fossils (sna) or both. The thickness of the nitride layer 502 formed on the horizontal surface of the material layer and the claw region is thicker than the nitride layer 5〇2 formed on the sidewall of the material layer 3〇4 (for example, by directivity) Nitriding process). In some embodiments, the thickness of the nitride layer on the horizontal surfaces of the material layers 3〇4 and st [region 3G2: the thickness ratio of the nitride layer on the sidewalls of the material layer is about 2:] to about ι在: In some embodiments, the nitride layer 502 has a thickness of about 5 to about 1 〇 (10) on the horizontal surface of the material layer 3 () 4 ohm m region 302. In some embodiments, the nitride 502 has a thickness of 1 nm or less than 1 nrn on the sidewalls of the material layer 3〇4. At step 406, nitride layer 5() 2 and (iv) layer 304 are selectively oxidized to form oxynitride layer 5 〇 4 and oxide layer 5 〇 6. The oxidation process is performed in the same chamber as the nitrogenation step 504. The oxidation step: 6 comprises any of the suitable oxidation processes described above in connection with method 200, and oxidation step 406 can be performed in the single-stage process described in Figures 5C-5D. As illustrated in Figure 5C, initially, the oxidation process can aid in the formation of the gas oxide layer 504. The oxynitride layer 5〇4 may consume a portion of the nitride layer 5〇2 on the horizontal surface of the material layer 3〇4 and the STI region 302, and may substantially consume all of the nitride layer 502 on the sidewalls of the material layer 304. The increased thickness of the nitride layer 5〇2 on the horizontal surface can limit or avoid oxidation of the underlying surface of the horizontal surface. With the elimination of the nitride layer 502 on the sidewalls of the material layer 3〇4, the oxidation process can consume a portion of the material |304. Since the unconsumed nitride layer 502' remains on the horizontal surface, the oxidation of the sidewalls of the material layer is faster on the horizontal surface 201142936. As illustrated in Figure 5D B, the oxide process is typically performed by consuming an oxidation process on the sidewalls of material layer 3G4 by consuming the material layer 304' inside the sidewalls to form oxides 506. The remaining unconsumed portion of the material layer 3〇4 is generally in the desired inverted tau shape. Moreover, as illustrated in Figure 5d, the oxidation process continues to consume a portion of the remaining nitride layer 5〇2 and a portion of the STI region 302, albeit at a slower rate than the material layer 3〇4 on the sidewall. . In step 408, as illustrated in FIG. 5E, the oxynitride layer 504 and the oxide layer 506 are removed to produce a floating gate having an inverted τ shape. The layers can be removed by an etching process associated with method 200 described above, such as wet or dry chemical etching, reactive ion etching, and the like. The etch process is selective, for example, to selectively remove the oxynitride layer 5 〇 4 and the oxide layer 506. In one embodiment, the etch process is selective for cerium oxide (Si〇2), cerium oxynitride (Si〇N), and tantalum nitride (siN), and is selective for the material layer 304 comprising polycrystalline germanium. In this case, a nitride layer 502 containing tantalum nitride (SiN), an oxynitride layer 504 containing bismuth oxynitride (Si〇N), and an oxide layer 506 containing cerium oxide (Si〇2) are removed. The etch process as described in Figure 5E can further selectively remove a portion of the STI region 302. In some embodiments, the meal process can be a multi-stage etch process. For example, the initial etch process can be selective only for cerium oxide (Si 〇 2) to remove oxide layer 506. Next, the engraving process can be selective for bismuth oxynitride (SiON) and vaporized germanium (SiN) to remove the oxynitride layer 504 and the nitride layer 502. After completing the 20 201142936 etch process to form a floating gate having an inverted τ shape, the memory member 2 〇〇 can be further processed, for example, by depositing (four) layers and controlling the gate layer, similar to that described in relation to the P-picture. _ layer and control closed:: As described above, the gap between the adjacent material layers 304 is filled with the CMP of the filled region and then the step of the remaining NP4 filled area is performed before the IPD layer. 'In some embodiments, you may want a low thermal budget (for example,

The low diffusion of the material, for example, is - or a plurality of (four) agents, U, for example, to limit the thickness of the through oxide layer 1〇4 or the area 3〇2. However, if such a disgusting thickening effect can be limited, a high thermal budget process (i.e., high oxygen diffusion) can be used. For example, high thermal budget processes (eg, wet, dry, or rapid thermal oxidation) can provide conformal oxidation, faster oxidation rates, thicker oxidation (eg, thicknesses of about 5 to about 15 abdomen), and more efficient The sidewalls are oxidized. In addition, the 'high-heat budget oxidation process can reduce the selectivity of the material layer (used to form the floating interpole) for different crystal directions'. Therefore, it is beneficial to the life of the real estate during the oxidation, and the moon table uses a material layer containing polycrystalline germanium to form the floating room. Extremely 'expected to reduce sensitivity to different crystal directions. For example, the smooth surface can promote the reliability of the memory component by reducing the junction resistance. Thus, in some embodiments, as described below in connection with Fig. 6, a memory element 7A fabricated with a portion of material | 7〇2 is used to form a floating gate having eight inverted T shapes. For example, the material layer 7〇2 may be higher than the material layer 3〇4 illustrated in Figures 3A and 5A, respectively. 21 201142936 Furthermore, the height of the STI region 302 can be reduced according to the height of the material layer 7〇2 (for example, as described above, by depositing and etching back a gap filling material such as cerium oxide) for use in the STI region 3〇 An increased distance between the exposed surface of the layer 2 and the tantalum oxide layer helps to resist oxidative diffusion in the tantalum oxide layer during the high thermal budgeting process. In some embodiments, the spacing between the top of material layer 702 and the top of STI region 3〇2 is substantially equidistant from the spacing of similar structures illustrated in Figures 3A and 5A. The increased height of both material layer 702 and STi region 302 can advantageously extend the distance that oxygen atoms must travel to reach the tantalum oxide layer 丨〇4, as compared to similar memory elements in Figures 3 and 5A. The increased height of the structures allows for the use of a higher thermal budget oxidation process when limiting the thickening of the passivation layer i04. Thus, by increasing the height of the STI regions 3 〇 2 in the memory device 700, an athermal budget oxidation process can advantageously be used to form a floating gate having an inverted T shape. After performing the high thermal budget oxidation process and removing the formed oxide layer, the thickness of the floating gate bottom is then reduced using an etching process and/or a more easily controlled low thermal budget oxidation process. The combination of a high thermal budget oxidation process with an etching process or a low thermal budget oxidation process will be described with reference to Figures 6 through 8 below. For example, Figure 6 illustrates a method 600 of fabricating a semiconductor component having a floating gate in accordance with some embodiments of the present invention. Method 600

Referring to Figures 7A through 7D and 8A through SB, FIGS. 7A through 7D and 8A through 8B are diagrams depicting the fabrication phase of memory element 700 in accordance with an embodiment of method 6A. 22 201142936 Method 600 generally begins with step 6〇2, in which a substrate having a material layer is provided in the step 〇2, which material layer will form a floating gate. For example, the substrate 1〇2 and the material layer 7〇2 as shown in Fig. 7A may be part of the partially fabricated memory element 700. The memory element 7A includes a substrate 1〇2 having a pass-through oxide layer 1〇4 disposed on the substrate 1〇2. A material layer 702 may be disposed over the tantalum oxide layer 1 () 4 . The shallow trench insulation (ST!) region 302 may be disposed on the substrate, such as the region adjacent to the through oxide layer 104 and the material layer 7A2. The substrate 102, the tantalum oxide layer 1〇4, and the STI region 3〇2 have been described in the above. Material layer 702 comprises a conductive material such as polysilicon, metal, and the like. The material layer 7G2 has a shape of a substantially rectangular cross section or a substantially trapezoidal cross section. The material layer 〇2 can generally have any suitable starting shape such that when oxidized and/or etched in the manner described herein, the material layer 702 can be formed into a floating gate having an inverted τ shape. Material layer 702 has a height greater than about 3 〇 nm, or a height of up to about 13 〇 (10). Material layer 702 has an aspect ratio greater than about 2:i. Next, in step 604, the material layer 7〇2 is selectively oxidized to form the first oxide layer 704 as shown in Fig. 7B. A first oxide layer 704 is formed over the sidewalls of the material layer 7〇2, and the first oxide layer 704 comprises hafnium oxide, a metal oxide, or the like. In some embodiments, the first germanide layer 704 can consume a layer of material 7G2 to a depth of from about 5 to about 15, or about 10 nm. The first oxide layer 7〇4 may make a portion of the sn region 302f thicker. The formation of an oxide layer can be performed using wet or oxidized, rapid thermal oxidation, and free radical oxidation (eg, decoupled plasma oxygen 23 201142936 (DPO)). In the embodiment of low enthalpy budget and/or reduced oxygen diffusion, 'use of electric destructive or self-based oxidation. During the oxidation of material layer 702, low: budget is required to avoid the increase of the enthalpy oxide layer 1 〇 4 Thick. After oxidation, the residual portion of material layer 702 is typically a collapsed shape having a larger dimension than the expected final shape (eg, the height of the bottom is greater and/or the width of the stem is larger). In step 6〇6, the first oxide layer 7〇4 is removed by an etching process in the same chamber as step 604 to generate a floating gate having a generally inverted τ shape, as illustrated in the figure. The residual portion of 7G2. The (4) process may be wet or dry (4), or reactive ion. The (4) process may use a chemical or gas containing hydrofluoric acid (HF), t gas acid. Selectively remove the first oxidation Layer 704. In some embodiments, the (d) process is selective for the dioxide, and the first oxide layer 7G4e comprising the dioxide is removed relative to the material layer comprising the polycrystalline germanium. During the layer 7 〇 4, the etch process may be further removed - the portion & sti region 302 » at step 608, using the (d) process to remove another portion of the residual material layer 702 to form the desired inverted τ The shape of the floating interpole, as shown in Figure 7D. (d) the engraving process can be wet or dry (four), or reactive ions _. In some embodiments, (d) process is reactive ion etching. As described above Method _ The resulting floating gate size is similar to the size of the floating gate formed using methods 200 and 400. 24 201142936 To form a 600-way hoist with an inverted T shape and the above dimensions, and a further 70 pieces can be implemented. Fabrication of the memory element 700 after etching the material layer 702 floating gate, the processing of the method step to complete the memory further processing may include deposition of the (four) layer and the control interlayer as described above. Alternatively, Depositing IPD Previously, the gap fill patch CMP process was performed 'then the area of the padded area is reversed (four) between the adjacent floating interpoles to control the desired depth of the IPD layer, as described above. Or in some embodiments, in the removal After the oxide layer is removed, the method 600 proceeds from the same chamber 6〇6 to the chamber 61〇, where the material layer is selectively oxidized to form the second oxide layer 706. The second oxide layer is formed 7〇6 is formed above the residual portion of the material layer 7〇2 and at the sidewall as shown in FIG. 8A, and the second oxide layer 7〇6 contains yttrium oxide, metal oxide, etc. In some embodiments The second oxide layer 706 can consume a layer of material 7 〇 2 to a depth of about $ to about 15 nm ' or about 1 〇 nm. The formation of an oxide layer can be performed using wet or oxidative, rapid thermal oxidation () radical oxidation, or electro-oxidation (eg, de-lighted plasma oxidation (DPO)), and because a lower thermal budget and // Or to reduce oxygen diffusion, plasma oxidation or free radical oxidation can be used. In some embodiments, low thermal budget directed oxidation (eg, plasma oxidation) can be used for the second oxide layer 7〇6 to grow on the horizontal surface of the material layer 7〇2 at a rate that is still at the sidewall surface. in. After the selective etching is performed to form the second oxide layer 706, the residual portion of the material layer 702 is generally an inverted T shape. In step 612, the second oxide layer 706 is removed by an etching process to complete the formation of a floating gate having the shape of the inverted τ 25 201142936, such as the residual portion of the material layer 7 〇 2 illustrated in the eighth β _ . The etching process can be ion etched. The etching process can use a chemical or a gas containing a hydrofluoric acid (IV) or a hydrogen acid. The engraving process can be selected, for example, to remove the second oxide layer writing selectivity. In the actual process, the etching process may be selective for the dioxide, and the second oxide layer may be removed from each other with a layer of oxidized stone per oxidized layer relative to the material layer 702 comprising polycrystalline germanium. During the removal of the second oxide, the button process further removes a portion of the STI region 3〇2. After the remaining portion of the material layer 7〇2 is removed to remove the second oxide layer 7〇6 and form a floating closed pole having an inverted T shape, the method _ will usually end. The floating gate formed by method_ has the same dimensions as the floating gate described in step 608. Further advance processing of memory element 700 includes deposition of (iv) I and gate layer as described above. 0, although high thermal budgeting processes are more beneficial for some embodiments, but when a higher thermal budget is applied, The rate of oxidation of the material layer (such as material layer 702 described above) tends to be saturated. For example, a situation in which the oxidation rate tends to be saturated may result in the inability to shape the material I 7〇2 into a shape having a desired size, causing thickening of the through-oxide layer 1〇4, or both. Further, even if the initial oxidation rate is high at lower temperature ranges (eg, '3G C ), any width range of 2 degrees is used (eg, between about 30 and about 11 〇 (rc) In the case of sinter, the oxidation rate is still saturated. For all the oxidation steps 26 201142936 disclosed herein, this temperature is effective. In addition, the electricity is generated. Lower" (eg, emperor: chemistry (UV or ozone), or dry / wet (for example, ozone, nitric acid, babies, and negliders have developed:) oxidation. Therefore, the present invention... The method of Figure 9 for a layer of shaped material (e.g., material layer 702) has a high initial oxidation rate as described below. 9 ^·, pre-different idling (four) saturation, TEM vapor deposition layer The function of thickness and time. The isotherm is rounded 仏' The oxidation process is continuous at any desired temperature. Initially, in the first cycle view of the isotherm, the oxidation rate is high, to During the period -1GG2 = Γ, oxide layer ... ° ° 4 to explain. With qing _ 2) (:: ' The rate of saturation begins to saturate, for example, in the second period, the second period 1006 is equal to the first period 1002 and the second is followed by the first h « ° ^ 02, and the thickness of the dioxide layer formed during the second period 1006 The surface is smaller than the first oxidized thickness, k 疋 is known to be slower oxidized during the second period _6

The Ming Dynasty P trial, the Society 7X stepped into the general shape of the isotherm 1000 that was produced at various temperatures. Thus, in order to shape the material layer 702 to the desired shape, a high thermal budget is required to achieve the desired oxide layer thickness to form the desired floating gate. Unfortunately, during the manufacture of certain structures, high thermal budget oxidation applications can undesirably cause oxygen (〇2) to diffuse to the exposed oxide layer (eg, 'passing through the oxide layer 1G4), resulting in oxidized prospects. Thicken. No. 27 201142936 Thus, in some embodiments of method 600, the repeated oxidation and etching processes can advantageously use the high initial oxidation rate applied during the first period i 〇〇 2 as illustrated in Figure 9 above. For example, in some embodiments, in step 604, a layer of material (e.g., material layer 702) is surface oxidized at an initial oxidation rate to form an oxide layer (e.g., first oxide layer 704). The material layer 7〇2 can be oxidized for a first cycle time (e.g., the first cycle 1〇〇2), at which point the oxidation rate is relatively high. After the oxidation rate is lowered to a predetermined value, for example, during the second period 1, the oxidation process is terminated. In some embodiments, the formation of the first oxide layer 704 is terminated when the oxidation rate is about 90% or less, or about 75% or less of the initial oxidation rate. In some embodiments, the formation of the first oxide layer 704 is terminated when the oxygenation rate is between about 〇% to about 9% or about 75% of the initial rate. Once the oxidation process is terminated, at least some of the first oxide layer 704 is removed by an etching process in step 6-6 (as described above and as described in Figure 7C). As illustrated in Figure 7C, once the first oxide layer 7〇4 is removed, the material layer 7〇2 will at least partially become the desired shape as described above. The removal of the first oxide layer 7〇4 provides the newly exposed surface of the material layer 7〇2, which may be further oxidized until the shape: the desired oxide layer shape. In some embodiments, the etching process can be a two-stage condensation and sublimation etching process, as described above. In some embodiments, the silver engraving process is terminated when the rate decreases to an initial (four) rate (four) 〇 % to about 75%, or to about 90%. The drop in etch rate can be attributed to material contrast (e.g., 'Si selectivity to si〇2) or diffusion 28 201142936 ==' in the same layer). During the (iv) process, the dependence of the individual material defects can provide additional or removal control methods during sacrificial oxidation. This provides the ability to use a heterogeneous surface, such as the example of a floating gate forming structure, when removing an oxidized material on a soil plate. The above method can be advantageously used to avoid removal of non-uniform materials. In step (4), the exposed surface of the partially shaped material layer 7〇2 is oxidized again to form another oxide layer (for example, the second oxide layer 7G6). The oxidation process is performed at the initial oxidation rate. The initial oxidation rate is substantially phase; the ^, +, m phases are specific to the above-described initial oxidation rate for removing the first oxide layer 2-4. As described above, after the oxidation rate drops to the pre-deuteration value, for example, The oxidation process is terminated during the second period of 1 〇〇 6. The desired process termination point can be any time similar to that described above. The oxidation process for forming the second oxide layer 说明 is illustrated at 8A. The oxidation process is terminated. At step 612, at least some of the second oxide layer 7〇6 can be removed by an etching process (as described above and illustrated in FIG. 8B). As illustrated in FIG. 86, once The second oxide layer 706 is removed, the material (10) The desired shape can be formed, as described above. Or 'removing the tantalum dioxide layer 7〇6 can again provide the surface just exposed by the material layer 702, which can be further oxidized until the desired shape is formed. The material layer shape. Thus, although disclosed as repeating only one oxidation and etching process, these processes can be repeated as many times as desired to form the desired material layer shape (i.e., the process can be repeated one or more times). 29 201142936 Compared to the continuous oxidation process, oxidation and oxidation of oxides can be used to form oxides at the same thermal budget. Oxidation and removal of oxidation in a single chamber = The cycle process can greatly increase the process throughput. For example, as shown in Figure 9: No, a continuous oxidation process (for example, the isotherm _ in the first cycle 1与2 and the second cycle) will be formed An oxide layer having a thickness of a second thickness of 1〇04 and a second thickness. However, under the same thermal budget as the continuous oxidation process, oxidation and migration of the cycle The total oxide thickness (eg, 'the total thickness of the first oxide layer state and the first oxide layer 7.6') may be the first thickness of the first thickness, and the oxidation and removal process of the cycle is, for example, A periodic oxide layer (eg, a first oxide layer, a second oxide is removed - during the period 1006, the oxide material layer is shaped to form a first-oxide layer (eg, 'second oxide layer 706'). : Figure 9 illustrates the cycle Oxidation and removal process Γ. As explained in the 'stage-cycle-after, the isotherm deviates from the isotherm by 1000 Γ π 1 (which represents the continuous oxidation process, only the "mo map' will wait The temperature line 1G1G is traced as a straight line. Root = how to perform the oxidation and removal process of the cycle, the isotherm 1010 can be in any shape. For example, if every repeated oxidation process is performed for the same cycle time (for example, the first Tune _ , 〗 仃 phase ... ... 帛 cycle 1002), then in the first cycle of the job = in every - consecutive steps the isotherm ι 〇. There may be: a shape of the line 1010. Alternatively, the shape of the isothermal 30 201142936 line 1010 may thus vary during a period in which the successive steps in the oxidation and removal process of the cycle are performed differently than the work in the course of the stomach 16 (not shown). However, the total oxide formed during the cyclic oxidation and removal process will be greater than the oxide formed by the same thermal budget (e.g., isotherm i 000) used in the continuous oxidation process. In some embodiments, the total oxide formed during the cyclic oxidation and removal process is greater than about three times greater than the oxide formed by the same thermal budget by a continuous oxidation process. The cyclic oxidation and removal processes described above can be advantageously employed to form other structures comprising structures having sub-lithographic dimensions. This structure includes, for example, 'ultra-thin floating gates, fins of fin field effect transistor (finFET) elements, patterned hard masks, and the like. For example, in some embodiments, a cyclic oxidation and removal process can be used to form an ultra-thin floating gate, as illustrated by Figures A through 丨1D. Figures 11A through 11D are diagrams depicting the fabrication stages of floating gate 1102 in accordance with some embodiments of the present invention. As shown in Fig. A, the method begins by providing a partially fabricated memory element 11 〇〇 <> the memory element 11 〇〇 is similar in structure and composition to the above-mentioned memory 1 〇〇. The memory device 丨 1 includes a substrate 102 having a ruthenium-through oxide layer 104 disposed on the substrate 1 〇 2 . A material layer 11 〇 2 (similar to the composition of any of the above material layers) is disposed on top of the ruthenium oxide layer i 〇 4 . A sti region ιι〇4 (similar to the composition of the above sti region) is disposed on each side of the material layer 11〇2 and adjacent to the material layer 11〇2. The STI area 11〇4 separates the individual memory cells of the component. Typically, the top surface 1103 of the STI region j 1〇4 and the top surface 11〇5 of the material layer n〇2 are substantially flat. Alternatively, the cyclic oxidation and removal process described above can be used in the same 31 201142936 chamber to thin the material layer 1102 to a desired shape (e.g., thickness). The top surface 1105 of the material layer ιι 2 is oxidized at an initial oxidation rate as described above to form the oxide layer 11 〇 6 as shown in the " When the oxidation rate drops below a certain percentage of the initial rate (as described above), the oxidation process is terminated. The oxide layer 1106 (along with a portion of the oxide in the STI region U 04) is then removed by an etching process as shown in FIG. 11C. The oxidation and removal process can be repeated until the material layer 1102 is thinned to a desired shape to form a floating pole. In some embodiments, the desired shape of the material layer 11〇2 has a first portion at the bottom of the material layer 1102. The width, the first width is substantially equal to the second width at the top of the material layer 1102. Still further, it is desirable that the shape comprises a final thickness of the material layer (10), for example, less than about 5 nm (although other degrees of ', such as ' from about 1 to about 20, or from about 1 to about 10 nm) are contemplated. The cyclic oxidation and removal process advantageously thins the material layer = the desired shape of the floating idler without causing undesirable oxidative thickening of the underlying tantalum oxide layer. The inventors have discovered that the presence of oxides in m::1104 can act as a barrier to avoiding the oxidation process reaching the puncture:layer HM. As shown in Fig. 10D, 'IPD layer circle: 6 electric layer 1110 is deposited on top of thinned material layer 1102, and shape= memory element 11G〇eIPD layer 11()8 and control gate are widely applicable to (4) Any material or group of materials σ of the layer and the control gate layer, as described above. In some embodiments, a cyclic oxidation and removal process can be used to form a 32 201142936 structure into a critical dimension that is similar in critical dimension. For example, the oxidation and removal system & uc diagram obtained by the 11A technique describes the use of the cycle (10) according to the stage t, and the core is manufactured by the micro-patterned structure. For example, the structure 1200 can be part of the 70-piece, such as the bound field. A ferrite (FinFET), or germanium is a hard mask structure fabricated. A structure _ comprises a layer of material 1202 deposited on top of the substrate 1204. The layer of material is deposited as shown in Figure UA such that one or more portions of the upper surface 12〇3 of the substrate 1204 maintain exposure. A mask layer 1206 is deposited on top of the material layer 12〇2. For example, the mask layer 1206 is used to pattern the material layer (10) to a critical dimension defined by the lithography. As noted above, substrate 1204 can be any suitable substrate. For example, in some embodiments of fabricating logic elements, substrate 12〇4 comprises germanium (^) or germanium dioxide (Si〇2). For example, in some embodiments of fabricating a hard mask structure, substrate 12〇4 includes layer U08 (illustrated by dashed lines in Figures 11A-uc). This layer 1208 is deposited on top of the non-defective layer 121〇 and borrowed The layer 128 is patterned by a hard mask. When the layer is 12 1 〇, the layer 1208 can be used as the second hard mask. The layer 12〇8 comprises one or more of the following: cerium oxide (si〇2), cerium nitride (SiN), aluminum oxide (Al2〇3) or other materials that can be deposited at low temperatures, or fabricated in (SOI) The buried oxide formed during the period. The non-antimony layer 1210 may comprise a metal, such as one or more of a crane (W), titanium nitride (TiN), etc., and/or a dielectric material, for example, germanium dioxide (Si〇2), high-k 2 a meta-oxide, a ternary oxide, a phase change 33 201142936 material (eg, oxidized bromine, ruthenium, etc.) and/or an alternative channel material in the ιν family (eg, er, Shi Xihua); and, or ΙΗ-V materials (eg, gallium arsenide, gallium nitride, indium sulphide, etc.), and/or organic matter (eg, pentadecene, fuUerenes, etc.). Some materials can degrade at temperatures above 1 〇〇 C, but these materials can benefit from the sub-lithographic patterning obtained by the method of the present invention to improve component performance. Mask layer 1206 can be any suitable mask layer, such as a hard mask or photoresist layer. The mask layer 12〇6 may include at least one of the following: cerium oxide (8) 〇 2), nitrite _ ) ' sil sil sil sil , , , , , , , , , , , , Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Ti Etc., or Oleine Salt & Chuan Coffee), such as Shixi Aluminum (AlSiO), Shixi Acid (ZrSi〇), Astragalus Acid (Fortune, etc. The above cycle oxidation and removal process can be Implemented in the prior art structure 12' to modify the lithographic patterned material layer 12G2 to a sub-lithographic critical dimension. As illustrated in FIG. 11A, in some embodiments, the material layer 12G2 is applied at the above-described oxidation rate. The sidewall 1212 is oxidized with the storm surface 1203 of the substrate 12G4 to form the vaporized layer 1214. After the first cycle time, 'when the initial oxidation rate falls below the - portion of the initial rate as described above, the termination is terminated. The oxidation process is as shown in FIG. UC. The etching process is used to remove the oxide layer. The etching process can be any suitable etching process described above, and the etching process is performed in the same chamber as the oxidation process. Visual requirements = re-oxidation and removal process, the material layer 12 〇 2 becomes desired Shape, example/, having the desired sub-lithographic size. Some implementations of consuming the substrate 12〇4 (or oxide layer 12〇8) by oxidation and/or etch process / ° boring 34 201142936 : Γ: ring After the oxidation and the subsequence are completed, the process portion 16202 is disposed on the convex portion 1216 of the substrate 1204. The portion 1216 can be the first palace width of the _ _ Austrian portion, the width and the bottom of the material layer 1202, Width and proximity material layer 1202 top 邙μ & ^ " 皙 茎 + + top 邛 宽度 宽度 : : : : : : 在 在 在 在 在 在 在 在 在 在 在 在 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些 些Between about 1 and about 3 〇 φ 一 政 政 30 30 30 30 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In some embodiments, the height of the modified material 12 12 〇 2 is between about 约 and about 3 ” claws. Or, in some embodiments, the substrate is not substantially consumed by the recycling process, and A raised portion 1216 will appear. For example, if the (four) process is selective to the acoustically tested material, the bulge can be avoided. The formation of fractions, for example, may not be characterized as a layer 1208 comprising tantalum nitride when in the embodiment, when the tantalum dioxide is etched. After the cyclic oxidation and removal process is used to modify the material layer 1 The structure 12 is processed further. For example, the material layer 1202 is used as a fin of a FinFET element, and a gate layer and a source/drain region are deposited. Alternatively, the The modified material layer 1202 itself 'to define the critical dimension of the hard mask formed by the Kelly. The process of the present invention can be advantageously used to reduce the generation of lithography and fin etch. Line edge roughness and surface roughness. The reduction in roughness and variability in the shape of the fin field effect transistor (FinFET) and the surface of the sidewall can improve component and system performance by reducing noise and variability. 35 201142936 II: Step by consideration of the alternative use - part and / or all of the heart & ' This method is suitable for forming a memory element having a floating gate of inverted τ shape. For example, a nitride layer (as illustrated in FIG. 4) is deposited on top of the material layer 7〇2 of the partially fabricated memory device (as illustrated in FIG. 6) to further limit the pass-through oxide layer. increase. Other combinations and variations of the methods described herein are equally within the scope of the invention. For example, a method, such as a configuration, provides the process. The individual process gases, plasmas, etc. required for the single-substrate processing chamber described herein can be performed in a single-substrate processing chamber to perform on-the-go oxidation and etching. The method of the invention is carried out in a single reactor or chamber in which a nitridation process is selectively performed. Configuring the process chamber to perform an oxidation process. The oxidation process comprises one or more of the following processes: an ultraviolet light oxidation process, a skunk oxidation process, a thermal oxidation process, a plasma oxidation process, or other free radical oxidation processes (eg, Thermal resistance line). Thus, a source of gas is lightly coupled to the chamber to provide one or more oxygen-containing gases for the oxidation process. The process chamber can be further configured to perform an etch process. The etch process includes one or more of the following processes: plasma etch < 4 two-stage etch comprising condensation and sublimation, as described above. The two-stage etching process can be thermally activated by means of an electric ferrite to activate the two-stage etching process or without providing plasma. Further configuration of the process chamber has a thermal control system for rapid control of substrate temperature to aid in a two-stage etching process. For example, the process chamber can include a cycle heater (and cooler) that can be used to cycle heating and cooling the substrate. The heater can include a flash energy based system (eg, 'lamps, lasers, etc.), a heat source that provides a larger thermal gradient between at least two predetermined substrate processing regions in the chamber (eg, 'suitable for placing the substrate in individual processing regions to selectively maintain low substrate temperatures suitable for condensation and high substrate temperatures suitable for sublimation), or by using remote plasma activation for etching gases The combination of the remote plasma source and the direct plasma source produces heat. The substrate support is movable 'to support the substrate in a predetermined processing area, and the substrate support may further comprise a lift pin or other substrate lifting mechanism for selecting the substrate by the support surface during the heating portion of the process The substrate is raised and returned to the substrate support surface during the cooling portion of the process. The substrate fulcrum member may also have a chiller (or temperature control) system to maintain the substrate support at a predetermined temperature (e.g., near the condensing temperature for the etch process). For example, in some embodiments, the thermal control system is adapted to quickly (e.g., in less than about ten seconds, or up to about 10 seconds, or up to about 100 seconds) the temperature of the substrate being replaced by about 3 〇 <>c (Help condense) to at least about 1 〇〇. 〇 (Helping Sublimation, for example, a schematic diagram of a process chamber 丨3〇〇 having this configuration is illustrated in Fig. 12. The process chamber 13A includes a substrate support 1302 disposed in the process chamber 13A for The substrate 13〇3 is supported on the substrate support 132. The gas source 丨3 〇4 is coupled to the chamber 丨3 to provide an oxygen-containing gas, a gas engraved gas, and optionally an inert gas and/or Nitrogen gas (for example, any of the gases described above). The plasma source 13〇6 is coupled to the system 37 201142936 and supplied to the gas supplied by the gas source to form an oxidized electric enthalpy or an etched electric raft at least— And optionally forming a nitrogen plasma to couple the heating source 138 to the process chamber to selectively ', ', 'reserve the substrate' and selectively provide energy to the gas source to form 氡At least one of chemistries or etch chemistry. The controller is coupled to the process chamber 13 〇〇 for controlling the operation 乂 and components of the process chamber. The gas source 13 〇 4 can be any suitable gas source, such as ,, and; ^ 4 gas panels for solid gas sources, etc. Minimizing the gas source, 丄3(10) to provide an oxygen-containing gas and an etching gas, and separately forming one or more oxidizing plasmas, etching plasmas, oxidizing chemicals, or etching into the material. Alternatively, the gas source 13〇4 may also provide one or more inert gases and/or nitrogen-containing gas to form a nitriding plasma. The electric source 1306彳 is any suitable f(four) or a plurality of tf sources, such as a remote electrical source, an inductor. a light source, a capacitive transfer source, a first source coupled to an overhead electrode (not shown;) and a second source (not shown) coupled to the substrate support, or any other plasma source configuration To form a plasma. In some embodiments, the plasma source 13〇6 is configured to provide energy to the gas of the gas source 1304 to form an oxidizing plasma, to etch plasma, and to selectively form a nitriding plasma. In some embodiments, the electropolymer source can supply heat to the wafer for sublimating reaction byproducts during etching. The heat source 1308 can be any suitable heating source for heating the substrate and/or by a gas source 1304 provides gas to form oxidation or etch Chemical substance. For example, the heat source comprises one or more luminaires configured to heat the substrate or a gas provided by a gas source. Alternatively, the heat source may comprise a heater or a gas shower head. The heater is, for example, a resistance heater or the like, which can be disposed, for example, in the substrate support 13() 2 for providing process gas to the process chamber. In operation, the system controller The 1310 is capable of storing data and feeding back data from individual systems (eg, gas source 13〇4, plasma source i3〇6, and heating source measurements) to optimize tool performance. Line controller 1310 typically includes a central Processing unit (cpu), memory, and support circuitry. The CPU can be any of a variety of general purpose computer processors that can be used for industrial settings. The support circuit is typically spliced to the CPU, and the support circuit includes a cache memory, a clock circuit 'input/output subsystem, a power supply, and the like. When the field is executed by the CPU, the software routine (for example, the method for performing the above-mentioned formation of the (4) interpole) converts the CPU into a specific-purpose computer (control benefit) mo. The software routine can also be stored and/or executed by a second controller (not shown) located away from the tool i. A particular single chamber device for performing the above process will be described in accordance with one or more embodiments. Figures 13 through 15 depict an embodiment of an improved plasma processing chamber. Embodiments of the invention may be practiced in a suitably assembled plasma reactor, such as I by Applied Materials, Inc. of St. A., Inc., California, or elsewhere. I: Decoupled Plasma Oxidation (DP〇) Reactor, below Will refer to Figure 13 for aggregating. Other suitable electro-destructive reactors can also be used, including remote electrodes. (10) 〇) Reactor or ring-type source plasma immersion ion implantation is exemplified by, for example, P3I available from Applied Materials, Inc., as will be described below in Figures 14 and 15. For example, Figure 13 is an illustration of an illustrative electropolymer reactor 1400 that is adapted to perform a cyclic oxide formation and removal process in accordance with an embodiment of the present invention. The & 1400 provides a low ion plasma through a conductive coupled plasma source power applicator driven by pulsed or continuous wave (cw) radio frequency (4) power generation. The reactor includes a chamber 1410 having a cylindrical side wall 1412 and a ceiling 1414 which may be dome-shaped (as shown), flat or other geometric shape. The plasma source power applicator package 3 coil antenna 14 16 is disposed on the ceiling 1414 and coupled to the RF# rate source via an impedance matching network 1418, the RF power source being the RF power generator 142 〇 is formed by a gate 1422 located at the output of the generator 1420. The generator 142 is controlled by a pulse signal having a selected duty cycle. The RF power generator 1420 is configured to provide a power of between about 5 watts and about 25 watts. It will be appreciated that other plasma source power applicators that produce low ion energy can be used, such as remote RF or microwave plasma sources. Alternatively, the power generator can be a pulsed DC generator. Reactor 1400 further includes a substrate support pedestal ι 424, such as an electrostatic chuck or other suitable substrate support for securing substrate 1426, such as a 2 〇〇 or 300 mm semiconductor wafer or the like. The base support 1 424 generally includes a heating device, such as a heater 1434, which is positioned below the top surface of the base station base 1424. Heater 1434 can be a single or multi-zone heater, such as a dual radial zone heater having radial inner and outer heating members 1434a and 1434b, as depicted in FIG. 40 201142936 Reactor 1400 further comprises a gas injection system Msg and a vacuum pump 14 buckled to the inside of the chamber. A gas injection system I428 is provided to _ or a plurality of process gas sources, such as oxidizing gas storage tanks 1432, for providing oxidizing gases, including: oxygen (〇2), nitrous oxide (8) (7), __nitrogen oxide (N〇) Nitrogen dioxide (N〇2), water (out of 0), hydrogen (h2) and hydrogen peroxide (H2〇2)·'reduction gas storage tank 1442 for providing reducing gas such as hydrogen, · etching gas storage The tank 1448 is for supplying an etching gas, for example, four I sizzling (cf4), sulphur sulphur (CHF3), sulphur hexafluoride (SF6), ammonia (NH3), nitrogen trifluoride (NF3), helium. (He), argon (Ar), etc. or other source of process gas required for a particular application, such as helium (He), argon (Ar), or the like, or an argon gas such as nitrogen (a). Flow control valves 丨446, 1444, and 1449 that are individually lightly coupled to a source of gas (eg, 'oxidizing gas reservoir 1432, reducing gas reservoir 1442, etching gas reservoir 1448, etc.) can be used to selectively provide process gases during processing Or process the gas mixture to the interior of the chamber. Other sources of gas (not shown) may also be provided for providing additional gases such as inert gases (helium, argon, etc.), gas mixtures, and the like. The chamber pressure is controlled by a vacuum valve 143 〇 throttle valve 1438. The duty cycle of the pulsed RF power output on the gate MU can be controlled by the duty cycle of the control pulse generator 1436 (the output of the pulse generator 1436 is coupled to the gate 1422). A plasma is generated in the ion generating region 144. The ion generating region 1440 is the volume of the antenna 2 below the ceiling 1414. # When the upper area (4) of the chamber 1410 away from the base is electrically aggregated, the electro-convergence can be regarded as the end of the 41 201142936 end plasma (for example, the plasma has the benefit of the formation of the far-end plasma, but the electric paddle is formed. In the same chamber 1410 as the substrate 1426). Alternatively, a remote plasma can be used. In this case, the ion generator 144 can be disposed outside the chamber 1 41 . In operating an embodiment of the above oxide layer in accordance with the present invention, a plasma reactor 1400 can be used to perform the oxidation process. For example, a plasma can be generated from the process gas in process chamber 1400 to form an oxide layer. Electrically induced by RF power inductive coupling from coil antenna 1416 disposed above ceiling 1414 and providing low ion power (eg, less than about 5 eV for pulsed plasma and less than about 15 eV for Cw electricity) In the ion generating region ι44 of the chamber 1410. In some embodiments, power of about 5000 5,000 watts is supplied to coil antenna M16 at a suitable frequency (e.g., in the MHz or GHz range or at a frequency of about 13 56 MHz or greater) to form a plasma. Power is provided in a continuous wave or pulsed mode having a duty cycle of about 2 to 70%. Generated during startup

About 5 eV or less than about 5 eV. For example, in some embodiments, the continuous plasma is allowed in the continuous "stop" interval. For example, in the "start" time of the pulsed RF power, the electricity is increased. During the "stop" period, the plasma energy is reduced. During the short "start" period, the plasma is generated in the ion generating region [44", which is roughly equivalent to the volume enclosed by the coil antenna 1 4 16 . The ion generating region 1440 is raised above a significant distance LD of the substrate 1426. During the "on" period, the plasma generated in the ion generating region 1440 near the ceiling iv4 will drift toward the substrate 1426 at the average speed % during the "stop" period. During each "stop" period, the fastest electrons diffuse into the chamber wall and allow the plasma to cool. The most energetic electrons diffuse to the chamber wall at a rate that is at the plasma ion drift rate Vd. Therefore, during the "stop" period, the energy of the plasma ions is significantly reduced before the plasma ions reach the substrate 1426. During the next "start" period, more electropolymerization occurs in the ion generating region 1440, and the entire cycle is automatically repeated. Therefore, the amount of plasma ions reaching the substrate 1426 is significantly reduced. At lower chamber pressures, the electrical energy amount of the pulsed rf example of about 10 mT and less than 1 〇 mT ' is much lower than the plasma energy of the continuous RF example. Both the pulsed RF power waveform during "stop" and the distance Ld between the ion generating region 1440 and the substrate 1426 must be sufficient to allow the plasma generated in the ion generating region 1440 to lose sufficient energy. This electropolymerization causes a small ion collision, damage or no ion impact damage after reaching the substrate 1426. More specifically, the "stop" period is defined by a pulse frequency of about 2 to 30 kHz, or about 10 kHz, and a "start" duty cycle of between about 5% and 2%. Thus, in some embodiments, the "startup" interval may last for about 5 to 5 microseconds '43 201142936 or about 20 microseconds, and the "stop" interval may last about 5 to 95 microseconds, or about 80. Microseconds. Electropolymerization can be produced in the low pressure chamber and thus reduce the likelihood of contamination induced defects. For example, in some embodiments, chamber 14 10 is maintained at a pressure of between about 1 and 500 mTorr. Also, by using a far-end plasma source and, optionally, by pulsing the power source power described above, the expected ion impact induced defects at this low chamber pressure level are limited or avoided. The substrate can be maintained at a temperature of about room temperature (about 22 ° C), or between about 20 and 750 ° C, or less than about 70 (TC, or less than about 60 (rc. In some examples) 'Higher temperatures can also be used in the remote plasma oxidation process, such as below 80 (TC. The chamber in Figure 13A also includes means for cooling the substrate. The means for cooling the substrate includes a sprinkler 1450, the showerhead 145 is disposed above the base 1424. The showerhead 1450 has a plurality of openings 1451, and the showerhead 1450 is in communication with the coolant supply 1452 via a passage or conduit (not shown). Suitable gases are, for example, inert gases such as nitrogen, or conductive gases such as helium, neon or mixtures thereof. The cooling hand & may also be included separately or together with the showerhead for supporting the susceptor 1424 Cooling system. Figure 13B shows a modified fixture with a feedback cooling system 1454 for cooling the fixture to at least as low as 20. (:, for example, 22 ° C, 25 (:, 30 ° C, Or other suitable temperature to perform a cyclic oxidation and etching process. It should be understood that the cold 44 201142936 does not necessarily include the anti-Wei control. The conventional cooling system for adjusting the temperature of the pedestal base 1424 can be used. The conventional cooling system uses a refrigeration system that uses conventional thermal cycling as well as through a separate system. Liquid heat transfer medium to transfer thermal energy between the coolant and the support base to cool the cold flux or coolant medium. The coolant can be deionized water with other such as glycol and (or a mixture of materials of perfluoropolyether. In the system shown in Figure 13B, 'this type of temperature feedback control system 1454 is shown in U.S. Patent Publication No. 2007/0097580, in which The anti-Wei control loop processor 1455 controls the backside gas pressure valve 1456. Although the simplest embodiment controls only the expansion valve 1468, the adjustable expansion valve 1468 and/or may be used with a given rf thermal load on the substrate 1426. The temperature feedback control loop of the bypass valve 1470 controls the wafer temperature or maintains the wafer temperature at the desired temperature. The heat conduction gas (for example, helium gas) is injected into the interface between the back side of the wafer cassette 426 and the top surface of the support pedestal 1 424 to increase the thermal conductivity between the wafer 1426 and the cooled support pedestal ι 424 To achieve this, a gas passage 1486 is formed in the top surface of the support base, and a pressurized helium gas supply 1488 is coupled through the back side gas pressure valve 1456 to the interior of the passage i486. The source 1490 is applied to the D c. clamping voltage of the gate 1482 to electrostatically hold the wafer on the top surface. The wafer 1426 can be determined by the holding voltage and the heat transfer gas (helium) pressure on the back side of the wafer. The thermal conductivity between the support base 1424 45 201142936. Wafer temperature control is performed by changing the backside force (changed by the control valve i4s6) so that the wafer temperature can be adjusted to the desired degree while changing the backside gas pressure, between the wafer and the support pedestal 1424 The thermal conductivity between them will also change, and the change in thermal conductivity will change the balance between: (4) wafer 1426 absorbs the heat applied by RF power to gate 1482 or (4) to the plasma and (8) from the wafer to the cooled Support the heat of the pedestal. Changing this balance must change the wafer temperature. Therefore, the control: back: gas pressure feedback control loop can be used for agile or high-reaction wafer: degree control. The temperature detector is used to sense the actual temperature. The temperature detector can be a temperature detector 1457, a second temperature detector Μ", a temperature detector 1459 at the ?, the generator into the σ 1463, at the evaporator outlet ^ The temperature detector 146 on 64, or any one or all of the detectors δ. To achieve this, the feedback control loop processor Mu can control the orifice opening size of the expansion valve 1468 in response to the The input or output of one or more temperature probes is provided to the processor 1472 by a user selected desired temperature value stored in the memory or user interface 1474. Briefly, at each During a continuous processing cycle, the processor 1472 compares the current temperature to the desired temperature value measured by at least one detector (eg, by detector 1457 in the ESC insulation layer). Next, when the desired temperature value and measurement When there is a difference in temperature values, the processor 1472 calculates an error value, and the aperture size correction of the bypass valve 1470 or the expansion valve 1468 is determined by the error, which reduces the occurrence of an error. Then according to the correction, The processor 1472 can change the size of the valve orifice. This cycle of 46 201142936 is repeated during the overall duration of the substrate process to control the substrate temperature. One (or more) temperature sensors 1457, 1458 in the support base 1459 and 1460 are coupled to the input of processor 1455. User interface or suffix 1461 can provide user selected or desired temperature to processor 1455. During each successive processing cycle, when current temperature is measured When the ri value (from one of the sensors 1457, 1458, 1459) differs from the desired temperature, the processor 1455 calculates an error signal. The processor 1455 determines the current correction of the back gas pressure valve setting by the difference. Reducing the temperature error' and changing the valve opening according to the correction. For example, deviating from the substrate temperature above the desired temperature requires increasing the backside gas pressure to increase the thermal conductivity to the cooled support pedestal 1 424 and lowering the substrate temperature. In the case where the substrate temperature deviates from the desired temperature, the above method can be reversed to increase the substrate temperature. Therefore, the substrate temperature can be controlled and The substrate temperature is immediately set to a new temperature that actually falls within the temperature range, the lower limit of which is related to the cooling temperature of the support pedestal 1424, and the upper limit of the temperature range is determined by the RF thermal load on the substrate "for example, The substrate temperature cannot be increased in the absence of RF thermal load, and the substrate temperature cannot be cooled below the temperature of the support pedestal 1424. If the temperature range is sufficient, then any conventional technique can be used to maintain the support pedestal 1424 at the desired level. An agile temperature feedback control loop to help regulate the backside gas pressure at the cooling temperature. The tower base 1424 includes a heat exchanger 1462 that exists as a cooling passage for the cooling medium, which may be Is any suitable cooling fluid, such as a cooling gas (such as helium or nitrogen), 47 201142936 or the type of fluid described above. The heat exchanger 1462 cooling passage includes an inlet 1463 and an outlet 1464. Heat exchanger 1462 is contained within support base 1424. The feedback control system 1454 can operate in two modes, namely a cold section (in which heat exchanger 1462 acts as an evaporator) and a heating mode (in which mode heat exchanger 1462 acts as a condenser). The residual elements of the feedback control system 1454 can be external to the support pedestal 1454 and include a reservoir 1465 and a compressor for extracting the cooling medium through the loop, and a condenser 1467 (for operating the cooling mode) and Expansion valve 1468 having a variable orifice size. Feedback control system 1454 (ie, heat exchanger M62, reservoir 1465, compressor 1466, condenser 1467, expansion valve 1468, and heat exchanger 1462, reservoir 1465, compressor 1466, condenser 1467, and expansion valve 1468 The conduits coupled together include a conventional type of cooling medium (which acts as a refrigerant or coolant when operating in a cooling mode) and the feedback control system 1454 can have low electrical conductivity to avoid The RF characteristics interfere with each other. The reservoir 465 prevents any liquid form of the cooling medium from reaching the compressor 1 by storing the liquid. The liquid is converted to vapor by appropriately operating the bypass valve 1469. In order to overcome the problem of thermal drift during the process, it is necessary to increase the efficiency of the feedback control system 145 1 to 1 或 or more by operating the anti-wei control systems 1454, 1462, 1465, 1466, 1467, 1468, so that in the heat exchange The cooling medium inside the device can be separated between the liquid phase and the gas phase. The liquid to gas ratio at inlet 1463 is sufficiently high to allow this liquid to gas ratio to be lowered at outlet 1464. This condition is ensured by the latent heat of all (or nearly all) heat transfer between the support base 48 201142936 seat 1424 and the cooling medium (coolant) through the cooling medium. Therefore, the heat flow in the anti-Wei control system 1 4 5 4 is more than 10 times higher than that in the single-phase cooling cycle. This condition can be met by lowering the liquid to gas ratio of the cooling medium from inlet 1463 to outlet 1464, which substantially limits the outlet 1464 to at least cause a very small amount of liquid to remain at outlet 1464 (or before outlet 1464). In the cooling mode, the coolant capacity of the anti-wei control system 1454 does not exceed the RF thermal load on the substrate. Under the control of the main processor M76 (the main processor 1476 controls both the feedback control loop processors 1472 and 1455), the cooperative feedback mode can be used to synchronously operate the fox feedback control loop of the back side gas pressure valve 1456.丨 454 and a wide range of temperature feedback control loops that regulate the refrigeration expansion valve 1々Μ. The feedback control loop (including the evaporator 1462, the compressor 1466, the condenser 1467, and the expansion valve 1468) controls the temperature of the workpiece by changing the temperature of the support base "Μ. Only by the heat capacity of the feedback control system 1454 Limiting this temperature range, and thus the temperature range can set the temperature of the workpiece to a very large range (for example, _1 〇. (: to any temperature of +15 〇. 。. However, by the thermal mass of the support pedestal Limiting a rate that affects the desired change in workpiece temperature at a particular time. For example, an electrostatic chuck used to support a 300 mm workpiece or a silicon wafer, this rate is slow so that i is in the workpiece 〇t: The change takes about 丨 minutes or more than 'this time is the time from the freezing unit to change the coolant hot strip 49 201142936 to the new temperature, until the workpiece temperature finally reaches the new temperature. Conversely, when the workpiece is in the workpiece The temperature feedback control system 1454 cannot change the temperature of the support base (at least not directly) when the desired change or correction is made in the temperature, and only the workpiece and support can be changed. Thermal conductivity between the pedestals. Since the rate is limited only by the rate at which the backside gas pressure can be varied and the thermal mass of the workpiece, the rate at which the workpiece temperature corresponds to this change is very large. In a typical system, The backside gas pressure corresponds to the movement of the valve 1456 in a small portion of 1 second. For a typical 3 mm mm wafer, the thermal mass is low so that the wafer (machined part) temperature corresponds to The backside gas pressure changes in a few seconds or in a portion of a second. Therefore, the temperature response of the workpiece in the temperature feedback loop is relative to the time scale in which the temperature control loop affects the temperature of the workpiece. In an instant. However, the agile feedback loop must be limited to change the temperature range of the workpiece: the RF heat load on the wafer is used to limit the maximum achievable workpiece temperature while the minimum temperature cannot be lower than the support pedestal. The temperature. However, it will be agile with a wide range of temperature control loops, and the case of d's because of its combination provides a large workpiece temperature range and non-hanging fast Therefore, the advantages of each can be used to compensate for the limitations of the other. A wide range of feedback control loops (processor 1472) can be used to program (Pr〇gram) the main processor 1476 to affect large temperature changes and to be used. An agile feedback control loop (processor 1472) is used to program the primary processor 1476' to affect fast but small temperature changes. The RF bias generator 1478 generates power in two frequency (HF) bands (eg, 13.56 MHz). 201142936 The elongated conductor or the rf conductor extending through the workpiece support pedestal will be connected to the conductive stencil with the bias impedance matching element 148. The above can be reversed with the above-mentioned 13A, l3B diagram. Embodiments of the invention are performed in different chambers of a combined electrolysis chamber. Two additional exemplary plasma reactors suitable for cyclic oxidation and etching include modified fast and/or far-end plasma oxidation (RPO) reactors (illustrated in Figure 14) and modified ring-type sources Plasma immersion ion implantation reactors such as P3I are illustrated in Figure 15. These reactors are available from Applied Materials, Inc., located in Laura, California. Figure 14 illustrates an apparatus or system for forming a plasma from a process gas, and the apparatus or system is used to deposit an oxide layer on a semiconductor structure. The apparatus or system includes a rapid thermal processing (RTP) apparatus 丨500, such as, but not limited to, RTP CENTURA® with HONEYCOMB SOURCETM, which is commercially available from Applied Materials. This suitable RTP device and the method of operation of the rtp device are described in U.S. Patent No. 5,155,336, assigned to the present applicant. Other types of thermal processors can also replace RTp devices' eg Epi or p〇ly Centura®. A single wafer "c〇ld Wall" reactor produced by Applied Materials can be used to form high temperature films such as epitaxial germanium, polylayers, oxides and nitrides. Dxz® chambers manufactured by Applied Materials are also suitable. The plasma applicator 1 502 is coupled to the RTP device 15 5 . In operation, the 5 xenon poly applicator 1502 provides an electropolymerized radical to the device, and the energy source is connected to the electric power source. Applicator 1 $ 〇2 to generate excitation 51 201142936 can produce plasma. In the embodiment illustrated in Fig. 14, the RTp setting 15 includes a process chamber 1506 surrounded by side walls 15A and bottom wall 1510. The upper portion of the side wall bog of the chamber 15〇6 is sealed to the window assembly i 5 12 by a "〇" ring. A radiant energy light pipe assembly or illumination II 1514 is disposed on the window assembly 1512 and coupled to the window assembly 1512. The light pipe assembly 1514 includes a plurality of tungsten sprocket lamps 1S16, such as Sylvan U YET lamps, each of which is mounted in a light guide 1518, for example, made of stainless steel, brass, aluminum, or other metal. production. The wafer or substrate 1520 is supported on the edge of the interior of the chamber 1506 by a support ring 1522 (typically made of tantalum carbide). The support ring 1522 is mounted on a rotatable quartz cylinder 1524. The support ring 1522 and the wafer or substrate ι 52 can be rotated during the process by the rotatable quartz cylinder 1524'. Additional tantalum carbide bond rings can be used to accommodate different sized wafers or substrates (e.g., 1 5 〇 mm, 200 mm, or 300 mm wafers) to be processed. The bottom wall 1 1 1 〇 of the RTP device 1 520 includes, for example, an upper surface of the gold or a reflector 1526 for reflecting energy on the back side of the wafer or substrate 1520. In addition, the rTP device ι5〇〇 includes a plurality of fiber optic probes 1528' that are disposed through the bottom wall 1510 of the RTP device 1500 for detection at a plurality of locations across the bottom surface of the wafer or substrate i 520 The temperature of the wafer or substrate 1 520. The RTP device 1520 includes a gas inlet (not shown) that passes through the sidewalls l5 〇 8 for injecting process gas into the chamber 1506 to permit various processing steps performed in the chamber 1506. A gas exit port (not shown) is placed on the opposite side of the gas inlet in the side wall 1 508. The gas outlet is part of the exhaust system and couples the gas outlet to a vacuum source, for example, a pump (not shown) is used to discharge process gas from the chamber 〇5〇6 and reduce the chamber 15〇 The pressure in 6. When the process gas containing the plasma radicals is continuously supplied into the chamber 丨5〇6 during the process, the exhaust system can maintain the required pressure. Other gas inlets 1530 are formed through the side walls 15A through which plasma of the process gas is injected into the process chamber. The applicator 15〇2 is coupled to the gas inlet ^30 for injecting plasma radicals into the process chamber. The light guide assembly 1514 includes a luminaire 1516 that is disposed in the shape of a hexagonal array or "honeycomb structure." Luminaire 1516 is provided to adequately cover the entire surface area of wafer or substrate 1520 and support pedestal 1522. The luminaire 1516 is partitioned to separate the regions to provide very uniform heating of the wafer or substrate 1520. The light pipe 1518 is cooled by flowing a coolant (e.g., water) between different light pipes. The viewfinder assembly 1512 includes a plurality of short light pipes 1532. A coolant (e.g., 'water) is injected into the space between the light pipes 1532 to cool the light guide s 1532. The light pipes 1532 are designated as light pipes of the illuminator. By extracting through the e-piece 1540 connected to one of the light guides f 1532, a true " will be produced in a plurality of light pipes. The light guides 1532 are sequentially connected to the catheter hubs. 53 201142936 The RTP device i500 is a single wafer reaction chamber capable of raising the temperature of the wafer or substrate 1520 at a rate of 25 to ° C/sec. For example, during the oxidation process, since the temperature of the wafer or substrate 152 is at least 4 〇〇 ° C, which is greater than the temperature of the chamber sidewall 1508, the RTp δ reserve of 15 00 can be regarded as a "cold wall" (c〇 Ld waU)" reaction chamber. The heating/cooling fluid is circulated through the side wall 1508 and/or the bottom wall ι 51〇 to maintain the wall at the desired temperature. The plasma applicator 丨5〇2 is coupled to the RTp device 15〇〇 as described above to provide an electrically forged free radical source to the RTP device. In the embodiment - the plasma is connected to the RTP device ls by the inlet member 1542. The plasma applicator 1502 also includes a gas inlet 1544. A gas source, such as a storage tank or reservoir 1546', is coupled to gas inlet 1544. Lightly applying the plasma applicator 1 5〇2 to the energy source 15〇4 by the waveguides 1 548a and 1 548b » the gas source contains one or more oxidizing gases, an inert gas, nitrogen for nitriding, and an etching gas, The gases can be in separate tanks or storage tanks. Fig. 14 illustrates an embodiment in which the plasma applicator i5〇2 is remote from the RTp device ι5〇〇, in this embodiment, plasma is generated outside the chamber 1506 of the rTP device 丨5〇〇. By placing the plasma applicator 1502 at a chamber 1506 remote from the RTP device 1500, a plasma source can be selectively generated to limit the plasma composition exposed to the wafer or substrate i to free radicals. "Therefore, a plasma of ions, radicals and electrons is generated in the plasma applicator i 5〇2. However, because of the size of the plasma applicator 1 502 (eg, 'length and volume) or the combined size of the plasma applicator 1502 and the inlet members 1542 54 201142936, all or generated by exciting the process gas to form a plasma Most of the ions will last longer than the ion lifetime of the ions and will become electrically neutral. Therefore, the composition of the plasma supplied to the gas inlet of the RTP device 15 is mainly a radical. The electric and applicator 1 502 comprises a body 15 5 such as aluminum or non-mineral steel. The body 1503 surrounds the tubular member 15〇5. The tube member 15〇5 is made of, for example, quartz or sapphire. The official member 1505 preferably does not have any electrical bias that attracts charged particles, such as ions. One end of the body 1503 includes a gas inlet 1544. Gas source 1546 is coupled to gas inlet 1544. The gas source 1546 is coupled to the gas inlet 1544 through a first input of the three-way valve to connect the second input of the two-way 155 至 to another process gas source, such as a storage tank or reservoir 1552. In the first position, valve MM provides a flow of gas between the source of gas, 1546 and gas inlet 1544, while avoiding any gas flow from gas source 1552 to process chamber 15〇6. In the second position, valve 1 550 provides a flow of gas between gas source 1552 and process chamber 1506 to prevent the flow of gas from the source of gas (10) to the gas inlet 1 544 of the applicator. The gas source contains one or more oxidizing gases, and the nitrogen gas and the etching gas are used for nitriding, and the gases may be in separate storage tanks or storage tanks. Connecting the flow controller 1554 to the valve 155〇, mobilizing between the different positions of the valve (10) according to the process to be performed, called the flow controller as a mass, dynamic controller, and coupling the flow controller to the source gas 1546 and Between the gas inlets 1544' to regulate the flow of gas to the plasma applicator (10) 55 201142936. Flow controller i 5 54 can also function in a manner similar to control 155 and 1551 to provide appropriate process gas flow from gas source 1546 or 1552 to the process chamber. A free radical outlet 1562 is placed on the opposite side of the gas inlet 1544. In a consistent embodiment, the free radical outlet 1 562 is coupled to the inlet member i 542 to provide free radicals from the plasma 1564 into the chamber 15〇6 of the RTP device 15〇〇. The free radical outlet 15 62 typically has a larger straight than the gas inlet i544 to allow the excited free radicals to be effectively discharged at the desired flow rate and to reduce the contact between the free radicals and the tube 15〇5. . The free radical flow rate generated and discharged by the plasma % adder 1502 can be determined mainly by the gas inlet flow, the size of the tube 15〇5 and the radical outlet 1562, and the pressure in the plasma applicator 15〇2. . The pressure in the process chamber should be less than the pressure in the applicator. When the pressure in the applicator is between about 1.0 and 8.0 Torr, the pressure in the process chamber is between about 0.50 and 4. Torr. For example, if the pressure in the applicator is about 2 00 Torr, then the pressure in the process chamber should be about 1.00 Torr. The energy source inlet 1566 is located at the gas inlet 1544 and the free radical outlet 1562 of the body 15〇3. The position between. The energy source inlet 1566 allows the excitation energy to be injected into the tube 丨5〇5 from the energy source 1 5〇4, which is, for example, energy having a microwave frequency. In the case of microwave frequencies, the excitation month b moves into the body 丨5 of the plasma applicator 15〇2 and passes through the tube 15〇5 to excite the gas source into electropolymerization, which is sourced parallel to the energy source inlet 1564. Move in the direction. 56 201142936 In one embodiment, the energy source 1 504 is comprised of a magnetron 1 568, an insulator and a virtual load 1570. The virtual load 1570 provides impedance matching. The magnetron 1 5 6 8 generates excitation energy, for example, an electromagnetic frequency or an inductive coupling frequency. The magnetron can generate 2.54 GHZ of microwave energy between 丨.5 and 6 〇 ku〇waU. A suitable magnetron assembly can be constructed from Applied Sciences and Technology, located in Santa Clara, California. Excitation energy from magnetron 1568 is directed through insulator, dummy load 1570 and waveguides 1548a and 1548b to tube 15〇5. In some respects, the virtual load 1570 acts as a clamp valve to allow energy to move in the direction of the applicator 15〇2 but not toward the magnetron 1568. The auto tuner 1S72 is located between the plasma applicator 15〇2 and the waveguide l548i and automatically adjusts the actuator 1572 to redirect the radiation reflected by the applicator 15〇2 back toward the plasma applicator to increase the application to the plasma application. The power of the device 1502. The auto-tuning stomach 1572 also concentrates the microwave power at the center of the tube so that the (four) can be more preferentially absorbed by the gas supplied to the applicator. Although an automatic adjuster is preferred, a manual tuner can be used. For example, 'software instruction logic, 铒 ,, the control signal is generated by the logic 1 5 5 5 is applied to the system to control crying" < 益1 556' The software instruction logic is to store the computer readable medium (for example, the department (4) is in the 糸, the first controller 1556 memory 1557 heart a, other things, the computer program contains a series of instructions 'This command ± „丁” ', 3, gas flow rate, chamber pressure, chamber 57 201142936 and force rate level, 旎罝 source adjustment and other specific process T number. By the system controller in the processor 1559 1556 to perform electricity. Month: 耘. So 'operable instructions to dominate time, gas flow rate, cavity to firm ^ to / dish degree, RF power level, energy source adjustment and its. His parameters 'to perform here The cyclic oxidation and (4) process. The apparatus in Fig. 14 further includes the above-described cooling circuit associated with the UB diagram, the cooling circuit is in communication with the controller system. 2 15 Figure illustrates the ring-type source plasma immersion ion implantation Into the reactor, the reactor is, for example, but not limited to, a P3I reactor commercially available from Applied Materials, Inc., which is described in U.S. Patent No. 7,166,524, assigned to the present applicant. This is suitable Apparatus and method of operation. Referring to Figure 15, a toroidal source plasma immersion ion implantation (pH) reactor 1600 can comprise a cylindrical vacuum chamber 16〇2 having a cylindrical sidewall 16 The crucible 4 is defined by a disc-shaped ceiling. The wafer support pedestal 16 〇 8 on the chamber chassis supports the processed semiconductor wafer 1610. The gas distribution plate or shower head "n" on the ceiling 1614 will come from the gas The process gas of distribution panel 1616 is received in gas manifold 1614 of gas distribution plate or showerhead 1612. The gas distribution surface - plate I616 gas output may be from any one or more individual gas supplies. 1618 Or a gas mixture. The vacuum pump 1620 is coupled to an extraction annulus 1622 defined between the wafer support pedestal 1608 and the sidewall 1604. The process region 1624 is defined between the wafer 161 〇 and the gas distribution plate 1612. 58 201142936 A pair of outer concave angle conduits 1626, 1628 establish a concave angular path that is supplied to the plasma flow through the process region, the annular path intersecting in the process region 1624. Each conduit 1626, 丨MS There is a pair of ends 1630 that are coupled to the cavity to the opposite side. Each of the conduits 1626, 1628 is a hollow conductive tube. Each of the conduits 1626, 1628 has a dc insulating ring 1632' that avoids both ends of the conduit. A closed loop conductive path is formed. The annular magnetic ring 1634 surrounds the annular 4 of each of the conduits 1626, 1628. The excitation coil 2 63 6 surrounding the magnetic coil j 63 4 is coupled to the RF power source 1 through the impedance matching component 1640. 638. The two RF power sources 1638 coupled to each individual magnetic ring 1636 can be two slightly different frequencies. The rf power coupled by the RF power generator 1638 produces a plasma ion current in a closed annular flow extending through the individual conduits 1626, 1628 and the process region 1624. The ion streams oscillate at the frequencies of the individual RF power sources I626, 1628. The bias power is applied to the wafer support pedestal 1608 through the impedance matching circuit 1644 by the bias power generator 1642. Plasma formation and subsequent oxide layer formation can be performed by: passing the process gas through the gas. Distribution plate 1612 is introduced into chamber 1624 and sufficient source power from generator 1 638 is applied to the concave corner guides 1626, 1628' to create an annular electrical current flow in the conduit and process region ι624. With RF bias generator! The applied wafer bias of 642 determines the flow of plasma near the surface of the wafer. The rate or flow rate of the electropolymer can be determined by the plasma density (the number of subdivisions per square centimeter per second from the surface of the sample is 59 201142936), and the plasma density can be increased by the RF source power generator 1638. The RF power level is controlled. The cumulative ion dose (ion per square centimeter) on wafer 161 is determined by both the flow rate and the total time to maintain the flow. If the wafer support pedestal 1608 is an electrostatic chuck, then the immersed electrode 1646' is provided in the insulating plate 1648 of the wafer support pedestal and the immersed electrode 1646 is coupled to the bias power through the impedance matching circuit 1644. 1642. In operation, the semiconductor wafer is realized by placing the wafer 丨6丨〇 on the wafer support pedestal 1608, introducing one or more process gases into the chamber 16〇2, and generating plasma by the process gas impact. An oxide or nitride layer is formed. The wafer bias ' delivered by the RF bias power generator 1642 can be adjusted to control the flow of ions to the wafer surface. In any of the above-described apparatuses relating to Figures 13A, 14 and 15, during the oxidation, exemplary conditions are: a pressure between about mT rrrr to about ι 〇 Ton*, and a power of about i to 5 Between the ranges of 〇〇〇Wau, more specifically, between the range of about 1 to 3000 Watts, and the temperature is between about 0 ° C and about 80 (the range of TC, and more specifically, Between about 〇 ° C and about 500 ° C. Exemplary etching conditions include: a pressure of about ! mT 〇rr to a range of about 1 〇 T 〇rr, and a power of about 1 to 5000 Watt Between the ranges, and the temperature is in the range of from about 〇 ° c to about 8 〇〇 r. In a particular embodiment, at about 30 C +/- 5 C to utilize direct electricity of NH: 5 / NF 3 chemistry The etching is performed by poly. The sublimation reaction is achieved by heating the substrate to at least about 1 ° C for at least about 1 minute at a pressure of 60 201142936 between the range of about 1 mTonr to about 1 〇T rr. The chambers associated with Figures 13A, 14 and 15 are used to achieve these conditions and to perform the cyclic etching and oxidation and/or nitridation processes described above. Any of the chambers associated with Figures 14 and 15 may include a system controller to control chamber operation, as described above in the system illustrated in Figure 12. Thus, in operation orders, the system controller can collect data from individual systems. And feedback, the individual system is, for example, a gas source's plasma source, heating source, and other components used to optimize chamber tool performance. Thus the 'gas source contains a volume or mass flow controller coupled to the system controller. 'The system controller can control the increase or decrease of gas flow in the chamber and the increase or decrease of pressure. The system controller connected to the source of the electricity can change the power, bias and other plasma of the plasma source of the chamber. Parameter. Whether the heating source is a heated sprinkler, electric resistance heater, light source or laser source (related to the type described in (4) below) 'the system controller is also connected to the heating source.

- one for performing the formation of the above floating closed

When CpU executes a software routine (such as its method of slamming a gate), converting CPU 61 201142936 to a special-purpose computer (control 罘彳 允 Γ ί ί ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) ) Μ Diagram) (4) Save and/or execute the software routine. By using the system controller', it is possible to cyclically re-form the oxide layer and/or the money layer in the chamber of the 13th, 14th, and 15th, and (4) (by plasma and sublimation) steps until the formation of the desired material An oxide and/or nitride layer of thickness. In the first to the 3C, to the se, 7 to π, 8A to ^, to the ^ ^ to the figure to describe the exemplary components and process procedures 'and can be described in the 13A, 14 Xiao 15 figure Any of these processes are performed in the chamber. According to one or more embodiments, the complete process of oxidation and/or nitridation and etching steps can be completed in the chambers in less than about 3 minutes. In a particular embodiment, the complete process of oxidation and/or nitridation and etching steps can be completed in the chambers in less than about 2 minutes, and in a more specific embodiment 'in the chambers Complete process of oxygen: and/or nitridation and etching steps in less than about one minute, such as 45 seconds or seconds. It has been previously believed that such processing time cannot be achieved in a single chamber that requires both etching chemistry, oxidizing and/or nitriding chemicals and about 100. (or higher temperature to less than about i〇〇t (example 2 is less than about 5 ° C, more specifically less than about 4 〇t, such as about 3 〇〇 c + / 5 ° C) Cycle capability to complete at least one oxidation and/or nitridation and residual single process. Accurate temperature control of only a few microns above the surface of the material can help fabricate components with the ultra-narrow features described above. In order to achieve this, it is necessary to include a luminaire or a laser heating section in the system described above in connection with Figures 13A, M and Μ 62 201142936. In one or more embodiments, the configuration is from a luminaire or a ray. The emitted light is such that the light energy emitted by the luminaire can contact the wafer at an incident angle that can be optimized by the material being used. The material processed by the present invention can be used with a single-wavelength source, or A plurality of light wavelengths are contacted, so that the wavelength of the portion can be effectively absorbed by the heated material. Suitable light sources include lasers, or various non-coherently scattered light sources, such as lamps, tungsten lamps, etc. 脉冲 Pulsed Laser heat treatment, The pulsed laser heating process uses a short pulse of laser radiation (eg, 2 G ns) that can focus on the reduced area of the component being processed. Ideally, the pulse is located near 20 _ by 30 _ The optical stepper area is the same size. The total energy of the laser pulse is sufficient to immediately heat the illuminated area to a high temperature. After that, the small volume of thermal energy generated by the shallow laser pulse can be quickly diffused to the untreated material. Heating the lower portion, thereby greatly increasing the cooling rate of the illuminated surface area. Multiple types of high power lasers can be pulsed at repetition rates of hundreds of pulses per second. Repetitively stepping over the surface of the material being processed Shooting and pulsing the laser in the surrounding area to heat treat the entire surface of the material being processed. A new type of laser heat treatment equipment has been developed in which continuous wave (CW) laser radiation of long and short dimensions will be developed. a narrow linear beam of light is scanned over the material being processed in a direction along the short dimension (ie, perpendicular to the line). The line width is sufficiently small and The scan rate is fast enough that the scanned light rays produce very short thermal pulses on the surface, after which time 63 201142936 can be rapidly diffused vertically to the substrate and diffused horizontally to a lower temperature surface area. This process can be considered as heat flow annealing. U.S. Patent No. 6,987,240 discloses the use of a laser diode strip arranged in the longitudinal direction of the beam to produce laser radiation. The laser diode strip is generally composed of GaAs or a similar semiconductor material and is composed of A plurality of laser diodes formed in the same layer of the photovoltaic wafer. The GaAs laser strip disclosed in U.S. Patent No. 6,987,240 emits near-infrared radiation at a wavelength of about 8 〇 8 nm. The radiation is well coupled to the crucible. Thus, in accordance with one or more embodiments, luminaire radiation, pulsed laser, continuous wave laser, and/or a laser diode can be used to selectively oxidize the surface of the material layer, An oxide layer is formed and/or the oxide layer is etched. Recently, it has been known that a laser source other than a GaAs diode has an advantage 'e.g., a carbon oxide laser, and a dual laser source has been suggested. For example, U.S. Patent No. 7,279,721 discloses the use of a dual laser source system to selectively oxidize the surface of a material layer to form an oxide layer and/or etch the oxide layer. Referring now to Figures 16 and 17, an exemplary embodiment of a dual source illumination system disclosed in U.S. Patent No. 7,279,721 is shown. The μth diagram shows a simplified pictorial representation of one of the embodiments of the present invention. The wafer 1720 or other substrate is mounted on the carrier, and the stage 1722 is driven by the motor in one or two directions under the control of the system controller 1724. A relatively short wavelength laser 1726 (e.g., a laser strip) emits a continuous wave (CW) beam of visible or near visible light at a wavelength shorter than the wavelength of the band gap (about hll center). For GaAs lasers I?%, 64 201142936, the emission wavelength is usually about 810 nm, with red light characteristics. The first optics 1730 can focus and shape the beam 1728, and the reflector 1732 redirects the beam 1728 to the wafer 1720 with a relatively wide excitation beam 1734, also illustrated in the plan view of FIG. The excitation beam 1734 is tilted at an angle (e.g., 5 degrees relative to the wafer) to prevent the beam from being reflected back to the GaAs laser 1726. This reflected radiation shortens the life of the laser diode. A long-wavelength laser, i.e., a carbon dioxide laser, emits an infrared continuous wave (CW) beam 1742 at a wavelength longer than the wavelength of the band gap (1 · 11 a m). In a particular embodiment, the carbon dioxide laser emits at a wavelength near 10.6. The second optics 1744 can focus and shape the carbon dioxide beam! 742, and the second reflector 1746 reflects the carbon dioxide beam 1742 into a relatively narrow heated beam 1748. In a special embodiment, 'the carbon dioxide heating beam 丨 7 4 8 is tilted relative to the substrate at a Brewster angle, which is about 72 degrees for the cerium oxide, so the heating beam 1748 can be maximized. The coupling is coupled to the substrate 1720. Because the angle of the refracted beam in the substrate 172 ......the angle between any reflected beams is 9 ,, and the reflected radiation is not generated, the incident angle of the Brewster angle is polarized (ie, the surface of the substrate 1720) It is most effective in terms of polarized radiation. Therefore, the s-polarized light in the di-n-carbonized light beam 1718 is more damped than the p-polarized light. However, the experiment showed a degree away from the substrate (仏(7) degrees). Coaxial 20 degree conical radiation typically produces a variable absorption value of about 3.5% for various patterns. This absorption is almost as good as the (four) achieved by Bruce. As illustrated in Figure 17, a 65 201142936 long wavelength (carbon dioxide) heating beam 17 4 8 is positioned and preferably coaxially on the short wavelength (visible light) excitation beam 1734. As the stage ι722 moves the substrate relative to the light source 1750 containing the lasers 1726, 1740 and the optical members 173, 1732, 1744, 1746, the beams 1734 and 1748 are scanned synchronously across the substrate 1720. Alternatively, the substrate can be stably fixed while moving all or a portion of the light source in one or two directions parallel to the surface of the substrate 1720 in accordance with a signal from the controller 1724. 1 7 5 0. For both the infrared heated beam 1748 and the visible light excitation beam 1734, the beam shape on the substrate 1720 is substantially rectangular or at least rounded. It should be understood that in fact the beam has a finite end that extends beyond the illustrated shape, so the beam shape described is illustrative and represents some portion of the center strength. Moreover, preferably, when both beams 1734, 1748 move synchronously relative to substrate 1720, the infrared beam 1748 is brought approximately coaxially over the larger visible beam 1734. The general effect is that the 'large visible light beam 1734 (which is greatly attenuated in the erbium) produces free carriers in a slightly larger area generally near the surface of the wafer. The smaller infrared beam 1 (the smaller red beam 1 748 is not absorbed by the unirradiated 矽) interacts with the free carrier generated by the visible beam 1734, and effectively absorbs the red, the beam The longer wavelengths are incident and converted to heat, thus rapidly increasing the temperature in the area of the infrared beam 1 748. The ramp rate and scan rate of the temperature can be determined primarily by the size of the smaller infrared beam 1748, while the larger visible beam (10) should include a small infrared beam 丨 748. The width of the smaller infrared beam 1748 in the scanning direction may partially determine the ramp rate of temperature and may reduce the width of the smaller infrared beam 1748 in a multi-knife application. The length of the smaller heating beam 1748, which is perpendicular to the direction of the depiction, should be sufficiently large to extend over a substantial portion of the substrate' and thus can be annealed at one pass and then a large portion of the field. The length of the constant 'linear beam' is at least 10 times the width of the linear beam. Preferably, the length is equal to or slightly larger than the diameter of the substrate. However, for commercially viable applications, the length is in the order of millimeters. An exemplary size of the smaller heating beam 1748 on the wafer is 0 丨 mm X 1 mm ′ but other dimensions can be used. It is generally desirable to have a smaller width, for example, less than 500 "claws or less than 175. The larger excitation beam 卩 "may be greater than 1748 in the size setting of the heating beam properties, for example, greater than i mm, such that, in the example, the larger excitation beam 1734 can extend about 1 mm in the scanning direction and a few millimeters in the vertical direction. The double wavelength causes the absorption of more infrared light in the surface region where the visible light is absorbed. The depth of the surface region is smaller than the absorption length of the carbon dioxide radiation itself. The visible light of the visible light (4) in the cut is in the visible light spectrum. The wavelength is reduced and rapidly reduced, for example, the absorption depth is about 1 对于 for 800 nm radiation, about 3 for 6 〇〇 nm radiation, and about 1 μm for 5 〇〇 1 ^ radiation. Shorter excitation wavelengths are only advantageous for generating free carriers at very close to the wafer surface to limit thermal energy close to the surface. Therefore, for some applications, shorter excitation wavelengths of the desired sentence, such as from Frequency-doubled Nd: YAG laser 532 nm radiation with the characteristics of 67 201142936 green light. It should be understood that the above-mentioned light source system does not need to contain dual light sources. In some embodiments, a single light source can be used. If a light source system is used to heat a layer of material on a substrate in accordance with - or embodiments, the precursor system can be coupled to a system controller of any of the above or below chambers in the specification Connected, and the heating of the surface of the material can be controlled by a system controller that can control various process parameters of the light source, such as the power of the light source and the duration of exposure of the material layer to the light. In other embodiments, A modified dry etch chamber to perform cyclic oxidation and etching of the surface of the oxide material. An exemplary chamber is sic〇nitm available from Applied Materials, Inc., as illustrated in Figures 8-20. Figure 18 is a partial cross-sectional view showing the illustrative process chamber 18〇〇. The process chamber 1800 includes a cavity main 舻 18Λ1 隹, from ^ 3 strands to the king body 18 〇 1, shy component 184 () and the branch assembly 1 8 2 0. The cover strain 1 χ 4 + a blue, and the member 1840 is disposed at the upper end of the chamber body 1801 and the support assembly 1 820 is at least partially disposed in the chamber body 1801. The chamber body 1801 The slit opening valve opening 1811 is formed in the side wall of the 妒: 士士胁 10 (Λ1 long melon to the main body 1801) to provide an inlet to the interior of the process chamber to 1800. The slit valve is opened D "n selectively opened and closed" to allow access to the interior of the chamber body. The chamber body 1801 includes a passage 1802 formed in the chamber body 1801 for flowing heat through the passage 18〇2 The fluid is transported. The heat transfer fluid can be a temperature that heats the fluid or coolant at the control chamber body 18〇1 and is used during processing and substrate transfer. Exemplary heat transfer fluids include 68 201142936 Exemplary heat transfer fluids also It may comprise water, ethylene glycol or a mixture thereof. Nitrogen. The chamber body 1801 further includes a lining 18〇8 which is deleted around the branch assembly. Pads are removable for maintenance and cleaning, and padding can be made of metal, for example, inscriptions, or ceramic materials. However, the liner 18〇8 can be any process compatible material. The pad 1808 can be bead milled to increase the adhesion of any material deposited on the pad 18 8 so that spalling of the material can be avoided resulting in contamination of the process chamber 18 . The lining 1808 & includes one or more apertures 18 〇 9 and an extraction conduit 1 〇 6 formed in the schematic 1808, the extraction conduit being in fluid communication with the vacuum system. The hole 1809 provides a flow path to the gas entering the extraction channel 18〇6, which provides a discharge to the gas in the process chamber 18(). The vacuum system includes a vacuum pump 1 804 and a throttle valve 丨8〇5 to regulate the flow of gas through the process chamber 1800. The vacuum pump 18〇4 is coupled to the vacuum port 18〇7, which is again placed on the chamber body 1801, and thus is in fluid communication with the extraction channel 18〇6 formed in the pad 1808. The hole 1809 allows the extraction channel 1806 to be in fluid communication with the process zone 108 in the chamber body 18〇1. The zone 1810 is customized with the lower surface of the cover assembly 1840 and the upper surface of the support assembly 1820, and the process zone 1810 is wrapped with a gasket. The hole 1809 can be sized to fit snugly around the liner 18 8 and evenly around the liner 108. However, any number, location, size or shape of holes can be used and each design parameter can be varied depending on the desired gas flow pattern on the substrate receiving surface, 69 201142936, which is discussed in more detail below. Additionally, the size, number, and location of the holes i809 can be configured to receive a uniform gas flow exiting the process chamber i 800. Also, the hole size and position can be configured to provide a fast or high volume extraction to aid in the rapid venting of gas by the process chamber 1800. For example, the number and size of the holes ι 809 close to the vacuum 埠 1807 can be smaller than the number and size of the holes 1 8 〇 9 at a distance from the vacuum 埠 1 807. The cap assembly 1840 is illustrated in more detail, and Fig. 19 shows an enlarged cross-sectional view of the cap assembly 184, which can be disposed at the upper end of the chamber body ΐ8〇. Referring to Figures 18 and 19, the cover assembly 184 includes a plurality of components stacked on top of each other for forming a plasma region or recess between the components. The cap assembly 1840 includes a first electrode 1841 (upper electrode), the first electrode 1841 being vertically disposed above the second electrode 1852 (lower electrode), and limiting the plasma volume in the first electrode 1841 and the second electrode 1852 Concave 1849. The first electrode 丨84丨 is connected to a power source 1844, such as an RF power supply, and the second electrode 1852 is grounded to form a capacitance between the two electrodes 1841, 1852. The lid assembly 1840 includes one or more gas inlets 1842 (only one shown). The one or more gas inlets 1842 are at least partially formed in an upper portion 1843 of the first electrode 184A. - or a plurality of process gases are introduced into the cover assembly 丨 84 through one or more gas inlet ports 842. Or a plurality of gas inlets 1842 are in fluid communication with the electro-concave recess 1849 at the first end of the one or more gas inlets 1842 and coupled to one or at the second end of the one or more gas inlets 1842 A plurality of upstream gas sources and/or other gas transfer components, such as a gas mixer. One or more gases 70 201142936 The first end of the inlet 1842 opens into the plasma recess 1 849 at the uppermost point of the inner diameter 1850 of the expanded portion 1846. Similarly, the first end of one or more gas inlets 1842 can be opened into the plasma recess 1 849 at any height spacing of the inner diameter 1 850 of the expansion portion 1846. Although not shown 'but two gas inlets 1 842 may be placed on opposite sides of the expansion portion 1846 to create a swirling flow pattern or "vortex" flow into the expansion portion 1 846, the vortex flow pattern or Eddy currents can help mix the gases in the plasma recess 1 849. The first electrode 1841 has an expansion portion 1846 that houses a plasma recess 1849. The expansion portion 1846 is in fluid communication with the gas inlet 1842 described above. The expansion portion 1846 can be an annular member having an inner surface or diameter 185 that is gradually increased from the upper portion 1847 of the expansion portion 1846 to the lower portion 1848 of the expansion portion. Thus, the first electrode 1841 and the second electrode 1852 The distance between the two is variable. This variable distance helps control the plasma formation and stability generated in the plasma recess 849. The expanded portion 1846 is similar to a cone or "funnel" (10), such as the 18th. As shown in Figure 19. The inner surface 185 of the expansion portion 1846 is gradually inclined from the upper portion 1847 to the lower portion 1846 of the expansion portion 1846. The inclination or angle of the inner diameter (10) can be varied depending on process requirements and/or process limitations. The 97 length or degree of the extension 1 846 may also vary depending on the particular process needs and/or limitations. The inclination of the inner diameter 185 、, or the extent of the expansion portion/knife 1486, or both, may vary depending on the electro-convergence volume required for the process. 71 201142936 Without wishing to be bound by theory, it is believed that the change in distance between the two electrodes ΐ84ΐ ι(4) may allow for the formation of electro-convergence in the sheath 1849 without the need for the entire electro-convex recess (10). The power level 'is used to maintain the destruction itself in some parts of the beam recess (10). Therefore, the electrical system in the electro-convex concave 9 is less affected by the pressure and allows for the generation and maintenance of electro-convergence in a wider operating window. Therefore, a repeatable and more galvanic electric shock can be formed in the cover assembly. The first electrode 1841 can be constructed of any process compatible material such as aluminum, anodized aluminum, nickel plated aluminum, nickel plated aluminum 6 〇 6 ι Τ 6, stainless steel, and combinations and alloys thereof. In - or more embodiments, the entire first electrode 1841 or a portion of the first electrode 1841 is coated with nickel to reduce unwanted particle formation. Preferably, at least the inner surface 1850 of the expanded portion 1846 is plated with nickel. The second electrode 1 852 can include one or more stacked plates. When two or more plates are required, the plates should be electrically connected to each other. Each plate should include a plurality of holes or gas passages to allow one or more gases from the electrical recess 1849 to flow through the plurality of holes or gas passages, the cover assembly 1840 further includes an insulator ring 1851 to electrically isolate the first The electrode 1841 and the second electrode 1852. The insulator ring 1851 can be made of oxidized or any other insulating, process compatible material. Preferably, the 'insulator ring 1851 surrounds or at least substantially surrounds the expanded portion 1 846. The first electrode 1852 includes a top plate 1853 and a distribution plate 1858 to

72 S 201142936 and the obstruction plate 1 862, the barrier plate 1862 separates the substrate in the process chamber from the plasma recess. A top panel 1853, a dispensing panel 1858, and a barrier panel 1862 are stacked and disposed at a lid edge 1864 that is coupled to the chamber body ΐ 8 , as shown in FIG. As is known in the art, a hinge assembly (not shown) can be used to couple the cover edge 1864 to the chamber body 18A. The lid edge 1864 contains a carbon tube or channel 1865' to accommodate the force σ heat transfer medium. The heat transfer medium can be used for heating, cooling, or both depending on the process requirements. The top plate 1 853 includes a plurality of gas passages or holes 1856 formed below the plasma recess 1849 to allow gas from the plasma recess 1849 to flow through the plurality of gas passages or holes 856. The top plate 1853 includes a recessed portion 1854 that is adapted to receive at least a portion of the first electrode 1841. In one or more embodiments, the aperture 1856 passes through a section of the top end plate 1853 located below the recessed portion 1854. The recessed portion 1 854 of the top end plate 1853 can be stepped (as shown in Fig. 19) to provide a preferred sealing joint in the recessed portion 1854. Also, the outer diameter of the tip plate 1853 can be designed to be mounted or supported on the outer diameter of the distribution plate 1 858 as shown in Fig. 19. A %-shaped % seal, for example, an elastic 〇-ring 855, is at least partially disposed in the recessed portion 1854 of the top plate 1 853 to ensure fluid-tight contact with the first electrode 184 1 . Likewise, a 〇-type annular seal 857' can be used to provide a fluid-tight contact between the outer edge of the tip plate 1853 and the dispensing plate 1858. The distribution plate 1858 is substantially disk-shaped and includes a plurality of holes 1861 73 201142936 or channels for distributing gas flow through the plurality of holes 1 86 1 or channels. The size of the hole 1861 can be designed and placed around the dispensing plate 1 858 to provide controlled and uniform flow distribution to the process zone 1810 in which the substrate being processed is disposed. And the hole 186 1 provides a uniform gas distribution over the entire substrate surface by slowing down and redirecting the velocity of the flowing gas to avoid direct gas impact on the substrate surface and evenly distributing the gas flow. The dispensing plate 1858 also includes an annular mounting flange 1859 formed on the outer periphery of the dispensing plate 1 858. The leaf mounting flange 1859 can be sized to support the upper surface of the cover edge 1864 with a Ο-type annular zipper, for example, an elastic ring, at least partially placed in the %-shaped mounting flange 1859 to ensure Cover edge ISM fluid seal contact. The knife-fitted plate 1858 includes one or more internal conduits or channels for receiving a heating or heating fluid flow to provide a lid assembly 1 84, and control to insert a resistive heating member into the channel 1 860 to add ' , ', knife with plate 1858 ° connect the thermocouple to the distribution plate 1 858, to = the temperature of the distribution plate (10). The ', , galvanic couple' can be used in a feedback loop to control the current applied to the heating member. Room 1 God heat transfer medium through channel 1860. Optionally, depending on the process requirements in the cavity = body 1801, the or more channels may include U media to better control the temperature of the distribution plate 1858. As above, any of the rails 11 - with ... can be used, for example, nitrogen, water, ethyl, or a mixture thereof. 74 201142936 Illustrated) The lid assembly 184 to heat the circumference 1858 of the upper surface of the lid assembly 1 858 can use one or more heating lamps (not (10). The heating lamps are placed in the distribution plate circumference to 'borrow &light# to heat The component comprising the dispensing plate is selected to use the obstructing plate 1862, and the obstructing plate end plate 1853 is disposed between the dispensing plate (10) and the blocking flat center 862 is movably mounted to the top plate 1 853. Lower surface: obstructing the plate 1862 can produce good thermal and electrical contact with the top plate. Use bolts or similar fasteners to block the flat &ample light to the top plate 1 853. The barrier plate 1862 can also be threaded or spiraled Fixed on the outer diameter of the top plate 1853. The obstructing plate 1862 includes a plurality of holes 1863 to provide a plurality of gas passages from the top plate 1853 to the distribution plate 1 858. The size of the hole/same 1863 is designed and the hole is The crucible 863 is disposed around the obstruction plate 1 862 to provide controlled and uniform flow distribution to the distribution plate 1858. Figure 20 shows a partial cut of the illustrative support assembly 1 82 The branch assembly 1820 is at least partially disposed in the chamber body 18〇 1. The support assembly 1820 includes a support 1822 that supports the substrate for processing in the chamber body 18〇1. The support 1822 Lightly coupled to the lifting mechanism 1831 through the shaft member 1826, the shaft member 1826 extends through a centrally disposed opening 1803 formed in the bottom surface of the chamber body 1801. The lifting mechanism 1831 is elastically sealed from the chamber body ls1 by the bellows 1832. The bellows 1832 can avoid vacuum leakage from the 75 201142936 around the shaft member 1826. The lift mechanism 1831 allows the support member 1822 to move vertically between the process position in the chamber body 801 and a lower transfer position. The transfer position is slightly lower than the opening of the slit valve 1811 formed in the side arm of the chamber body 。8. In one or more embodiments, the substrate is secured to the support assembly 1820 using a vacuum clamp. Top plate 1823 A plurality of through holes 1824 can be included, the plurality of through holes 1824 being in fluid communication with one or more grooves 1827 formed in the support member 1822. Transmission through the vacuum disposed in the shaft member 1826 and the support member 1822 Lane 1 825, the recess 1 827 is in fluid communication with a vacuum pump (not shown). Under certain conditions, when the substrate is not disposed on the support 1822, the vacuum conduit 1825 can be used to apply purge gas to the support. The surface of the 1822. The vacuum line 1 825 can also be purged during processing to prevent reactive gases or by-products from contacting the back side of the substrate. The support 1822 can include one or more through holes 1829 for receiving lift Pin 1830. Typically, each of the lift pins 183A is constructed of ceramic or ceramic-containing material, and each lift pin 丨83〇 is used for substrate processing and transportation. Each of the lift pins 183 is slidably mounted in the bore 1829. By engaging the annular lifting ring 1828 disposed in the chamber body 18〇1, the lifting pin 183 is movable in the individual bore 1829 of the lifting pin 183〇. The lift ring 1 828 is moveable such that when the lift ring 1828 is in the upper position, the upper surface of the lift pin 183〇 can be disposed above the substrate support surface of the support member 1822. Conversely, when the lift ring 1828 is in the lower position, the upper surface of the lift pin 183 is positioned below the substrate support surface of the support member 1822. Therefore, when the lift ring 76 201142936 1828 is moved from the lower position to the upper position, each of the four knives of the lift pin "π" passes through the individual drill holes 1 8 2 9 of each of the lift pins 1830 of the support member 1822. When actuated, the lift pins 1830 push against the lower surface of the substrate 2140 to lift the substrate away from the support 1822. Conversely, the lift pins 183 are actuated to lower the substrate, thereby supporting the substrate on the support 丨822 The support assembly 1820 can include an edge ring 1821 disposed about the support 1822. The edge ring 1821 is an annular member adapted to cover the outer periphery of the support 1 822 and protect the support 1822. The edge ring 1821 is set Adjacent to or adjacent to the support member 1822, an annular purge gas passage 1833 is formed between the outer diameter of the support member 1822 and the inner diameter of the edge ring 1821. The annular purge gas passage 1833 and the through-through support member 1822 are formed. The purge gas conduit 1 834 of the shaft member 1826 is in fluid communication. Preferably, the purge gas conduit 1834 is in fluid communication with a purge gas supply (not shown) to provide purge gas to the purge gas In operation 1, 1 833. In operation, purge gas flows through conduit 1834 into purge gas passage 1833 and around the edge of the substrate disposed on support 1822. Thus, purge gas cooperating with the edge ring can be avoided at the edge and/or Or deposition on the back side of the substrate. The temperature of the support assembly 182 is controlled by circulating a flow through the flow channel 1835 embedded in the body of the support 1822. The flow channel Μ" is in fluid communication with the heat transfer conduit 1836, which The heat transfer conduit Η% is disposed through the shaft member 1826 of the support assembly 1820. The flow channel By is disposed along the branch member 1822 to provide uniform heat transfer to the substrate receiving surface of the support 1822 77 201142936. The flow channel 1 83 5 and the heat transfer conduit 183 6 can flow a heat transfer stream ' to heat or cool the support 1 822. The support assembly 1820 further includes an intrusive thermocouple (not shown) for monitoring the temperature of the support surface of the support member 1822. In operation, the support 1822 is raised to near the lid assembly 1 840 to control the temperature of the substrate being processed. Therefore, the substrate is heated by the radiation radiated from the distribution plate 1858 controlled by the heating member 丨86〇. Or by using the lift pin ι 830 actuated by the lift ring 1828, the substrate is lifted two away from the support member 1 822 to the heated lid assembly 184. The modified chamber may further comprise an oxidizing gas supply, and the oxidizing gas supply is in fluid communication with the auxiliary gas inlet 1 892 for providing oxidizing gas into the chamber 1800 (as shown in Figure 18), for example, oxygen (〇2), nitrous oxide (仏〇), nitric oxide (7) combined with it. In an alternate embodiment shown in Fig. 19, the oxidizing gas supply 189 is in fluid communication with the auxiliary gas inlet 1 893 in the plasma volume or recess 1849. In another variation (not shown), the oxidizing gas is connected to a remote source of electrical destruction, which originates from an oxidative plasma remote from the chamber 18 and oxidizes the transport into the chamber. . It is difficult for the reducing gas supply to supply a reducing gas such as hydrogen to the chamber to be deleted by the reducing gas inlet. Other gas supplies include an inert gas supply 盥 inlet (not shown) to deliver 'halogenous gases such as helium, argon, and the like. The system also includes a source of nitrogen 'for performing a nitridation inverse on the material layer to control the flow of each of these gases. 78 201142936 In other variations of the chamber 1800, a type of lamp associated with the above-described figures 16 and 17 can be used to heat the heated portion to 70 pieces. I, the cooling system of the type related to the above-mentioned 13B can be used to rapidly cool the support to assist the temperature of the substrate, and the above-described cyclic deuteration and etching process can be performed on the material layer of the substrate. It is operatively coupled to the system controller with the cooling system and other components to control various system parameters. Desirably, the system controller can control the complete process sequence for the oxidation and/or nitridation and etching steps to be completed in less than about 3 minutes. In a particular embodiment, the complete process of oxidizing and/or nitriding and buttoning steps can be completed in the chamber within about 2 minutes, and in more specific embodiments, can be less than about i minutes. For example, 45 seconds, or 30 seconds, complete processing of the oxidation and/or nitridation and etching steps in the chamber. An exemplary dry etching process performed in the process chamber 18A will be described below. The dry etching process uses ammonia gas (3) and triple gasification gas (NF3) to remove the oxide layer. Referring to Figures 18 and 2, the dry etch process begins by placing the substrate in process area 181. The substrate is typically placed in the chamber body 18〇1 through the slit valve opening 1811 and the substrate is disposed on the upper surface of the support member 1822. The substrate is clamped on the upper surface ' of the support 1822 and the edge purge gas is passed through the passage 丨 833. The substrate is held on the upper surface of the branch member 1822 by the hole 1824 and the recess 1827 which are in fluid communication with the vacuum pump through the official road 1 825. If the support member 1822 is not in the process position, the support member 1822 is then raised to the process position in the chamber body 1801. The chamber body 18 〇 1 79 201142936 is maintained at a temperature between 50 ° C and 80 ° C, preferably 65 t. The temperature of the chamber body i 8 维持 is maintained by passing the heat transfer medium through the flow channel 1 800. The substrate (having one or more and the above 3A to 3C, 5A to 5E, 7A to 7D) by passing a heat transfer medium or a coolant through the liquid flow path 1 835 formed in the support member 丨82〇 , 8A to rib, i〇a to or 11A to 11C related types of material layer) Cold example: from price to scratch. Bu will implement the fund, and the base will be lower than the temperature. In other embodiments, the substrate is maintained between temperatures between 22 ° C and 4 ° t. Typically, the support 1822 is maintained below about Μc to achieve the desired substrate temperature as described above. To cool the support 1822, coolant is passed through the flow channel 1835. The continuous coolant flow provides better temperature control of the support member 1822. Alternatively, use a system of the type associated with Figure (4) to cool the substrate. The ammonia gas and nitrogen trifluoride gas are then introduced into the chamber 18 to form a cleaning gas mixture. The amount of gas in each of the introduction chambers is changeable and can be 'tuned' to adjust, for example, the thickness of the removed oxide layer into the cleaned substrate or other material surface geometry, the volume of the electropolymerized volume 1 The volumetric capacity of the chamber body 1801 and the capacity of the vacuum chamber coupled to the chamber. In one aspect, a gas is added to = gas mixture 'the gas mixture has ammonia gas: three gasification nitrogen to W mole ratio. In another aspect, the molar ratio of the gas mixture is at least about ^, 0. 1 (disordered milk. Nitrogen gas). In a particular embodiment, the gas is introduced into the chamber 100 at a molar ratio of 5: 彳 γ - (Noprene bismuth difluoride) to 30: 1 . The molar ratio of the material is from about 0:1 of the molar mixture of the gas mixture. More specifically in some embodiments, the gas is mixed 5 .  1 (ammonia: nitrogen trifluoride) to about 1 〇: 1. The ratio also falls to about 10:1 (ammonia: nitrogen trifluoride). A purge gas or carrier gas can also be added to the gas mixture. It can be: any suitable purification/carrier gas such as argon, helium, hydrogen, nitrogen or a substance. In some embodiments the 'entire gas mixture is from about 0. 05% to about & main about 20/. The ammonia gas is composed of nitrogen trifluoride, and the remaining part is a carrier carcass. + & ” In one embodiment, a purge or carrier gas is introduced into the chamber body 1801 before the reactive gas enters the chamber body 1801 to stabilize the pressure in the chamber body 1801. The chamber is in the body 1801. The operating pressure chamber can vary. In some embodiments, the pressure is maintained between about 5 Torr and about 30 Torr. In a particular embodiment, the pressure is maintained between about 1 T rr rr to about 10 Torr. In one or more embodiments, the operating pressure in chamber body 1 801 is maintained between about 3 Torr and about 6 Torr. In any of the two embodiments, about 5 to about 6 〇〇Wau& The rf power is applied to the first electrode 1841 to electrically ignite the gas mixture of the electric t recess 1849. In a particular example, the RF power is less than i(10) gamma. In a more specific embodiment, the frequency of 'applying power is relatively low. For example, less than 100 kHz. In a particular embodiment, the frequency is in the range of about 5 〇 to about 9 。. Because of the lower electrode 1853, obstructing the flat wrist and the distribution plate 1858, the electricity is made The plasma that is ignited in the swell (10) does not interact with the process area 181 The substrate in the crucible is in contact, but 81 201142936 is collected in the chamber recess 1 8 4 9 . Therefore, the electropolymer can be generated in the plasma recess ι 849 with respect to the process area 1810. That is, the process chamber 1 800 provides two separate regions: plasma recess 1 849 and process region 1810. These regions do not communicate with each other as for the plasma formed in the plasma recess 1849 'but for formation in the plasma recess i 849 For reactive species, these regions are connected to each other. Specifically, the reactive species generated by the plasma can exit the electroconvergence recess 1849 via the hole 1 8 5 6 , pass through the hole 1 863 that blocks the plate ι862, and via The hole 1 8 6 1 of the distribution plate 1 8 5 8 enters the process zone 1 8 1 。. The plasma energy dissociates the ammonia gas from the nitrogen trifluoride gas to a reactive species, which combines to form a highly reactive gas. Phase ammonium fluoride (NH4F) compound and / or ammonium hydrogen fluoride (NHj · HF). These molecules flow through the holes 1856, 1863 and 1861 to react with the oxide layer of the material layer on the substrate. In an embodiment, 'first Introducing the carrier gas into the chamber 18〇〇 A plasma of a carrier gas is generated in the plasma recess 1849, and then a reactive gas, ammonia gas and nitrogen trifluoride are added to the plasma. As described above, the plasma formed in the electropolymerization recess 1849 does not Reaching the substrate disposed in the process area or process area 1810. Without wishing to be bound by theory, it is believed that the etchant gas, NH4F and/or ΝΗβ HF can react with the ceria surface to form ammonium hexafluoroantimonate ((H4) 2SiF6) product of ammonia (NH3) and water. Ammonia and water are vapors under process conditions, and ammonia and water are removed from chamber 1800 by vacuum pump 18〇4. More specifically, the volatile gas stream 82 201142936 moves through the hole 1 809 formed in the liner 1 808 before the gas exits the chamber through the gong 1807 and enters the vacuum pump j 8〇4. Extract channel 18 06. On the back side of the surface of the treated material layer - (NH〇2SiF6 film. The reaction mechanism can be summarized as follows: NF3 + NH3 - NH4F + NH4F · HF + n2 6NH4F + Si02 - (NH4)2SiF6 + H20 (NH4) 2SiF6 + heat-NH3 + HF + SiF4 After forming a film on the surface of the substrate, the support 1 822 having the substrate supported thereon is lifted to an annealing position, which is close to the heated distribution plate 1858. By the distribution plate 1 858 The heat radiated should be sufficient to dissociate or sublimate (NH^SiF6 into volatile tetrabarium fluoride (the product of siF〇, ammonia and hydrogen fluoride (HF). Then, by the above vacuum pump 18〇4 The volatile product is removed from the chamber. In fact, the material on the substrate: vaporizes or vaporizes the tantalum film, leaving an exposed oxide surface. In an embodiment, a temperature of 75 t or higher is used to be efficient. The ground material is moved by the material surface and moved (4). In a specific implementation, (4) a temperature of 100t or higher, for example, between about (1) to about lan. Transfer or radiation by a knife with a plate 1858 (with Axian 6 film) Dissociation is (NH4)2SiF6 volatile warrior early on The thermal energy of the composition. As described above, the twisting member 1860 can be directly coupled to the split plate 1858 and actuate the heating member 1860 for the component 1 858 and the components that are in thermal contact with the heating member 1 860 Add to eight production / m ... to 7 丨 to about 25 (TC temperature). In one aspect, the s knife with the thousand plate 1858 is heated to between about 1 〇〇〇 c 83 201142936 to about The temperature between 20 〇c, for example, about 12 〇 ° C. The lifting mechanism 183 升高 can raise the support member 1822 toward the lower surface of the distribution plate i858. During this lifting step, the substrate is fixed to the support member 1822, for example Or by a vacuum clamp or an electrostatic clamp. Alternatively, the substrate is lifted away from the support member 1822, and the lift pins 183 are lifted through the lift ring 1828, and the substrate is placed adjacent to the heated distribution plate 185. The distance between the upper surface of the substrate and the distribution plate 1 858 can be determined experimentally. The need to be able to efficiently evaporate the film without damaging the underlying substrate is determined by several factors, including But not limited to, Thickness of the layer. In one or more embodiments, between about square. The spacing between 254 _(1〇 mUs) to 乂〇8 _ (200 mils) is valid. In addition, the choice of gas also affects the spacing. During etching, it is desirable to maintain the susceptor at a relatively low temperature, for example, from about 20 eC to about 60. (in the range of: less than about 50. 匚, specifically, less than about 45t, less than about 4〇t:, less than about 35° C. In a particular embodiment, etching is performed in chamber 1 800 During this period, the temperature is maintained at about 30 ° C +/- about 5 ° C ' to help coagulate the etchant and selectively control the etching reaction. Removing the film or oxide layer may further comprise: using the lifting mechanism 1831 to support the support The 1822 is raised toward the lower surface of the dispensing plate 1858. Or 'the substrate is raised away from the support 1 822 and the lift pins 1830 are raised through the lift ring 1828, and the substrate is placed adjacent to the heated distribution plate 1 858. The dispensing plate is heated to a temperature of more than about 1 〇〇〇c so that the surface of the silver-engraved material can be heated above about i 〇 (rc. 84 201142936 in a particular embodiment, 八八. Knife with plate 1 858 heated to At least about 140 C, at least about 150, at least about 16 〇, at least about 17 〇, at least about 18 ° C, at least about 4 η.  C ' to ensure that the surface of the material reaches a temperature sufficient to sublimate cerium oxide. Because of, - coffee ~ this in the cavity to 1 800 'a non-limiting example of the 6-type etching process contains ammonia gas (10). Or a gas of nitrogen trifluoride or anhydrous hydrogen fluoride (10) is applied to the electropolymerization volume 1849 at a low temperature (for example, about scratch), ammonia or nitrogen trifluoride emulsion, or anhydrous The hydrogen gas and the far-end electro-excitation are condensed on the ceria (, 〇 2), and the reaction forms a compound which can then be sublimed in the cavity at a moderate temperature (for example, greater than (10) t), for sculpting the dioxide. . This sublimation completes the etching of the surface of the material and the byproducts can be removed by vacuum pump 1840. It is desirable to maintain the temperature of the chamber wall between the temperature of the substrate support and the temperature of the gas distribution plate to prevent etchants and by-products from condensing on the walls of the chamber 1800. Once the film or oxide is removed from the material table (4), the surface of the material is ready for subsequent oxidation processes to form an oxide layer. The dry button processor 1832 is cleaned and evacuated. Purification of the inert gas such as nitrogen, hydrogen or argon is accomplished by flowing an inert gas directly through the gas inlet or distribution plate (10) into the process chamber. Next, the material layer is further processed by an oxidation process to form an oxide layer. It should be understood that the step of removing the film or oxide layer from the surface of the material need not be performed first. From the process descriptions associated with the 3A to %, from the smear, the 7 8 to 忉, the 8 8 to the smear, the 〇A to the brain, or the 11A to the llc diagram, it can be understood that in some embodiments Removing a portion of the oxide layer or 85 201142936 film layer may perform the step of oxidizing the surface of the material layer to form an oxide layer. In an embodiment, an oxide layer is formed in chamber j 800. In other embodiments, an oxide layer is formed in a load lock region (not shown) outside the slit valve opening 1811. In an embodiment where the oxide layer is formed in the cavity to 1 800, the oxidizing gas supply 1890 flows the oxidizing gas directly through the inlet 1892 into the chamber. Suitable oxidizing gases comprise one or more of oxygen, ozone, water, argon peroxide (H2〇2), or nitrogen oxide species, for example, nitrous oxide (nitrous oxide), nitrogen monoxide (NO) or dioxide. Nitrogen (N〇2). The oxidizing gas is introduced into the chamber at a suitable low pressure. Next, the chamber is heated to a suitable temperature so that the oxide layer can grow on the surface of the material. In one or more embodiments, the chamber temperature is heated to a range of from about 20 Torr to about 800 Torr. In a particular embodiment, the chamber is heated to a range of from about 3 °C to about 4001. The above is to promote the oxidation reaction on the material which will be processed to form a material layer, for example, as described above with respect to Figures 3A to 3C, 5A to 5E, 7A to 7D, 8A to 8B, 10A to 10D or 11A to 11C. Related. In an alternate embodiment, the cooled support member 1 822 introduces one of an oxidizing gas, such as oxygen or other oxidizing gas, which passes through a gas passage in the support to reduce the oxidizing gas prior to contacting the surface of the material. Premature decomposition of the oxidizing gas is produced, and an oxide layer will be formed on the surface of the material. In other alternative embodiments, the oxidizing gas supply 1 890 is in fluid communication with the plasma volume 1849 via a gas inlet (not shown), and the introduction of the oxidized electricity 86 86429429 can form an oxide layer on the surface of the material of the substrate. . In other alternative embodiments, the formation of oxidized plasma in the remote plasma oxidation source in fluid communication with chamber 1800 is similar to the configuration shown in Figure 13. The distal nitride plasma can also be formed by applying nitrogen gas to the remote plasma source. In another embodiment, the substrate support 1 822 can be biased using a radio frequency (RF) power source (similar to the configuration shown in Figure 5). Therefore, 'summary of the above' can form an oxide layer on the surface of the material in the chamber i 8 藉 by one or more of the following methods: introducing an oxidizing gas into the chamber and heating the surface of the material, and introducing the source of the plasma at the distal end The remote plasma source is separated from the plasma volume 1 849, the oxidizing gas is introduced into the plasma volume 1849 and the oxidized plasma is delivered to the substrate on the support 1822, or RF driven The substrate support 1822 forms a galvanic and introduces oxidizing gas into the chamber. An exemplary and suitable pressure in the chamber is about; between [mTorr to about 10 Torr. In still other alternative embodiments, the surface of the material can be precisely heated to form an oxide layer by using a luminaire or a laser heating component (of the type associated with Figures 16 and 17 above). This luminaire or laser heating element can be used to rapidly heat the processed components to temperatures ranging from 〇 °C to 1000 °C. In a particular embodiment, ozone can be used as the oxidizing gas, and the ozone can be introduced through the gas inlet or substrate support 1822 and ultraviolet light can be used to initiate the photochemical oxidation reaction. This reaction is expected to be performed in the load lock region outside the slit valve 18 11 . After the oxide layer is formed on the surface of the oxidized material layer, the chamber 1800 is again purged to remove by-products of the oxidizing gas from the (iso) oxidation reaction. Borrowing 87 201142936 Purification is achieved by flowing an inert gas into the chamber and/or using a vacuum pump 18〇4. The step of forming an oxide layer and etching (by plasma and sublimation) may be repeated in the chamber 1 800 until a telluride layer having a desired material thickness is formed. The description of the exemplary components and process procedures is related to Figures 3A through 3C, 5A through 5E, 7A through 7D, 8A through 8B, 10A to !〇!> or 11A through 11C, and may be in the single chamber described above. Perform any process in 18〇〇. The single chamber rapid thermal process (RTP) apparatus can also be used to perform the steps of repeatedly forming an oxide layer and etching (by plasma and sublimation) in a cavity to medium cycle until an oxide layer having a desired material thickness is formed. The description of the exemplary 7L piece and the process program is related to the above 3A to 3C, 5A to 5E, 7A to 7D, 8A to 8B, l〇A to l〇D or 11A to 11C diagrams and can be in Fig. 21 Perform any process in a single chamber as described. Figure 21 shows an exemplary embodiment of a rapid thermal processing chamber 21 (10). The process chamber 2100 includes a substrate support 2104, a chamber body 2102, the chamber body 2102 includes a wall surface 21〇8, a bottom portion 211〇, and a top portion 2112, the bottom portion 2110 and the top portion 2m defining an interior volume 2u. The wall surface 2108 generally includes at least— Substrate access ports 2148 are provided to facilitate the entry and exit of the substrate 214G (the portion of the base 2140 is shown in Fig. 21). The port is lightly coupled to a transfer chamber (not shown) or a load lock chamber (not shown) that selectively seals a valve, such as a slit door (not shown). In the embodiment, the substrate support 2104 is annular and the chamber 2100 contains a radiant heat source 2106 in the inner diameter of the substrate support member 2104. The radiant heat source 2106 is provided with a radiant heat source 2106, typically comprising a plurality of luminaires. An example of a modified RTP chamber and the use of a substrate support is described in U.S. Patent No. 6,800,833 and U.S. Patent Application Publication No. 2005/0191044. In an embodiment of the invention, the chamber 2100 includes a reflective plate 2200 that is combined with a gas distribution outlet (described more clearly below) for evenly distributing gas over the substrate while allowing for rapid and Controlled substrate heating and cooling. The plate 2200 is heated and/or cooled' to aid in the oxidation and/or etching described above. The panel may be absorbent, reflective or have a combination of absorbing and reflecting regions. In a detailed embodiment, the panel can have multiple zones, some of which are within the field of view of the pyrometer and some of which are outside the field of view of the pyrometer. The regions within the pyrometer field of view, if circular, have a diameter of about 1 inch, or have other shapes and sizes as desired. These regions within the field of view of the probe can have very high reflectivity over the range of wavelengths observed by the pyrometer. In the pyrometer wavelength range and the outer side of the field of view, the plate can range from reflective with minimal loss of radiant heat to absorbable heat loss maximizing for shorter thermal exposure. The RTP chamber shown in Fig. 21 also includes a cooling block 2180 that is adjacent to the top 2112, to the top 2112, or to the top 2112. Typically, the cooling block 218 is placed away from the radiant heat source 2 1 06 and opposite the radiant heat source 2 1 06. Cooling block 2108 includes one or more coolant passages 2 1 84 that exit with inlet 2181A. Port 2181B is coupled. The cooling block 2108 can be made of a process compatible material such as stainless steel, slag, polymer, or ceramic material. The coolant passage 2 1 84 comprises a spiral pattern, a rectangular pattern 89 201142936, a circular pattern or a combination of the above, and is manufactured, for example, by a prayer cooling block 2 1 80 and/or from two or more components. The block 2180 is cooled and the components are joined, and the channel 2184 is formed in the cooling block 21 80. Additionally or alternatively, the coolant passages 2丨84 are drilled into the cooling block 2 1 800. The inlet 2 181A and outlet 21 81B steel are connected to the coolant source 21 8 2 by a valve and a suitable plumbing, and the coolant source 21 8 2 is in communication with the system controller 21 2 ' to help control the setting The pressure and/or flow in the coolant source 21 8 2 flows. The stream can be water, ethylene glycol 'nitrogen (N2), helium (He), or other liquid stream as a heat exchange medium. In the illustrated embodiment, the substrate support 2 10 04 is selectively adapted for magnetic suspension and rotated within the interior volume 2120. When the substrate is vertically raised and lowered during the process, the substrate support 2104 is shown to be rotatable' and the substrate can be raised or lowered without rotating the substrate before, during, and after the process. This magnetic suspension and/or magnetic rotation can avoid particle generation or minimize particle generation because of the lack or reduction of moving parts that are typically used to raise/lower and/or rotate the substrate support. The chamber 2100 also includes a window 2114 that is made of a material that can penetrate heat and light of various wavelengths, the light contained in the infrared spectrum, through which photons from the radiant heat source 2 106 are passed. The substrate 2140 can be heated. In one embodiment, the window 2114 is made of a quartz material, but other light transmissive materials may be used, such as 'sapphire. The window 2 11 4 also includes a plurality of lift pins 2 1 44 coupled to the upper surface of the window 2114, the lift pins 2144 being adapted to selectively contact and support the substrate 214〇 to assist in transporting the substrate into and out of the cavity to 2100. Each of the plurality of lift locks 2144 is configured to minimize absorption of energy from the radiant heat source 2106, and each of the plurality of lift pins 2144 is made of the same material as the window 2114 'eg quartz material . The plurality of lift pins 2144 are disposed and radially spaced apart to assist in the passage of the end effector that is transferred to a transfer robot (not shown). Alternatively, the end effector and/or the robotic arm can be moved horizontally and vertically to aid in transporting the substrate 2140. In one embodiment, the radiant heat source 210 6 includes a luminaire assembly formed from a housing that includes a honeycomb tube 2160 in a coolant assembly (not shown) coupled to the second Coolant source 2183. The second coolant source 2183 can be one or a combination of the following: water, ethylene glycol, nitrogen, and helium. The outer casing walls 21〇8 and 21(7) may be made of a copper material or other suitable material having suitable cooling passages formed therein for flowing coolant from the second coolant source 2183. The coolant cools the outer casing of the chamber 21〇〇 such that the outer casing is cooler than the substrate 2140. Each tube 216〇 contains a reflector and a high-intensity luminaire assembly or an infrared (10) hantom source that forms a honeycomb-like configuration. The tightly packed hexagonal configuration of the tubing provides an energy source with high power density and good spatial resolution. In the embodiment, the radiant heat source 21〇6 provides sufficient (four) energy to treat the substrate with heat 91 201142936, for example, to anneal the layer of germanium deposited on the substrate 2140. The radiant heat source 2106 further includes an annular region in which the voltage applied to the plurality of tubes 216A by the controller 2124 can be varied to increase the energy radiation distribution from the tube 216A. Dynamic control of the heated substrate 2140 can be effected by one or more temperature detectors 2117 that are adapted to detect the temperature of the entire substrate 2140. In the illustrated embodiment, the optional stator blank 2118 circumscribes the wall surface 2108 of the chamber body 2102, and the stator assembly 2U8 is coupled to one or more actuation assemblies 2122, the one or more actuation assemblies 2122 The control stator assembly 2118 rises along the exterior of the chamber body 21〇2. In an embodiment (not shown), the chamber 21〇0 includes three actuation assemblies 2122 that are radially disposed along the chamber body, for example, along the chamber body 21〇 2 about 12 degrees of angle. The stator assembly is magnetically coupled to the substrate support 2 disposed in the interior volume 2120 of the chamber body 2102. The substrate support 2104 has or contains a magnetic component that functions as a rotor, thereby producing a magnetic bearing assembly to High and/or rotating the substrate support member. In one embodiment, the alpha-groove (not shown) partially surrounds at least a portion of the substrate support 21〇4, the recess being coupled to a flow source 2186, the flow source 2186 comprising water, ethylene glycol, Nitrogen, gas, or a combination of the above, acts as a heat exchange medium for the substrate support. The stator assembly 2118 also includes a housing 219 以 to accommodate various portions and components of the stator assembly 2 ΐ 8 . In an embodiment, the stator assembly HU includes a drive coil assembly 2168 that is stacked on the suspension coil assembly 217G_L. When the suspension coil assembly 2m is adapted to passively position the base 92 201142936 plate support member 21G4 in the center of the process, the drive (four) (four) member 2168 is adapted to (4) rotate and/or raise/lower the substrate support member or, by having The stator of a single coil stage performs the rotation and central positioning functions. The atmosphere control system 2164 is also consuming into the internal pool 2120 of the chamber body 2i. The ambience control system 2164 typically includes throttling and true = pumps for controlling chamber pressure. The ambience control system can be additionally packaged with a gas source to provide process gas or other gas to the internal volume 212〇. The atmosphere control system 2164 is also adapted to deliver gases for the thermal deposition process, the thermal etch process, and the in situ cleaning of the chamber components. The ambient control system works in conjunction with the sprinkler gas delivery system. The cavity to 2100 also includes a controller 2124, which typically includes a central processing unit (CPU) 2130, a support circuit 2128, and a memory 2126. The CPU 2130 can be any one of any form of computer processor that can Used in commercial settings to control various commands and sub-processors. The memory 2126, or computer readable medium, can be - or a plurality of readable media, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any Other forms of digital storage, area or remote end, and the memory 2126 is typically coupled to the CPU 2 13' for supporting the controller 2124 in a conventional manner. These circuits include cache memory, power supplies, clock circuits, input/output circuits, subsystems, and more. In one embodiment, each of the actuation assemblies 2122 generally includes a precision lead screw 2132 that is coupled to two flanges 93 201142936 2134 that are from the chamber body 21〇2 The wall ι〇8 extends out. The lead screw 2132 has a nut 2158 that moves axially along the lead screw 2132 as the screw rotates. A coupling member (21A) is coupled between the stator 2118 and the nut 2158 such that when the lead screw 2132 is rotated, the coupling member 2136 can be moved along the lead screw 2132 to control the height of the stator 2118. Union 2136 = at the interface. Thus, when the lead screw 2132 of one of the actuators 2122 is rotated to create a relative displacement between the nuts 2158 of the other actuators 2122, the horizontal plane of the stator 2118 will be relative to the center of the chamber body 21〇2 The axis changes. In one embodiment, a motor 2138 (e.g., a stepper motor or servo motor) is coupled to the lead screw 2132 to provide controllable rotation in response to the controller 2丨24 signal. Alternatively, other types of actuators 2122 can be used to control the linear position of the stator 2118, such as a pneumatic cylinder, a hydraulic cylinder, a ball screw, an electromagnetic coil, a linear actuator, a cam follower, and the like. The chamber 2100 also includes one or more sensors 2116 that are generally adapted to detect the substrate support 21〇4 in the interior volume 2120 of the chamber body 2丨〇2 ( Or the height of the substrate 214 〇). The sensor 2116 is coupled to the chamber body 21〇2 and/or other portions of the process chamber 21〇(), and the sensor 2116 is adapted to be provided on the substrate support 2104 and the chamber body 21〇2 The output of the distance between the top 2112 and/or the bottom 211 is indicated, and the sensor 2116 can also detect the alignment offset of the substrate support 2104 and/or the substrate 2140. One or more sensors 2 11 6 are coupled to the controller 2 1 24, the control 94 201142936 2 12 4 receives the output measure from the sensor 2 116 and provides a signal or signals to one or A plurality of actuation assemblies 2122 are provided to raise or lower at least a portion of the substrate support 2 1 〇4. The controller 2 124 can use a position measure that is obtained by the sensor 2i6 to adjust the height of the stator 2118 on each of the actuation assemblies 2122, and thus can be relative to the RTP chamber 21 / or the central axis of the radiant heat source 21 〇 6 simultaneously adjusts the orientation and flatness of the substrate support 2104 and the substrate 2140 (on the substrate support 21 〇 4). For example, the controller 2124 can provide a signal to raise the substrate support by the action of an actuator 2122 for correcting the axial alignment offset of the substrate support 2104, or the controller can provide a signal All of the actuators 2122 are provided to assist in the synchronous vertical movement of the substrate support 21〇4. The one or more sensors 2 1 16 may be ultrasonic, laser, inductive, capacitive or other types of sensors capable of detecting substrate supports inside the chamber body 210 2 The approximation of piece 21 〇4. The sensor 2116 is snapped to the top 2112 of the chamber 2102 or to the wall 2108'. However, other locations in the chamber body 2102 or around the chamber body 21〇2 are also suitable 'eg, coupled The stator 211 8 to the outside of the chamber 2 1 . In one embodiment, one or more sensors 2 116 are coupled to the stator 2118' and the one or more sensors 2116 are adapted to sense the substrate support 2104 (or substrate 2140) through the wall 2108. Height and / or location. In this embodiment, wall 21 08 includes a relatively thin cross section to aid in sensing the location through wall 2 108. The chamber 2100 also contains one. The plurality of temperature sensors 2117, the plurality of temperature sensors 211 7 implemented before, during, and after the process of the invention are adapted to sense the temperature of the substrate 2 1 40 after the process. In the example, temperature sensing || 2117 is placed through the term 2112, however it may be disposed in the chamber body 2102 or at other locations around the chamber body 21〇2. The temperature sensor 2U7 is a photometric pyrometer, for example, a pyrometer having a fiber probe. The sensor 2117 is coupled to the top 2112 in a configuration that is capable of detecting the entire diameter of the substrate, or other locations of the substrate. The sensor 2U7 includes a pattern that defines a sensing region that is substantially equal to the diameter of the substrate, or a sensing region that is substantially equal to the substrate half. For example, a plurality of sensors 2117 are coupled to the top 2112 in a radial or linear configuration to create a detection zone across the radius or diameter of the substrate. In one embodiment (not shown), a plurality of sensors 2117 are disposed in a line that extends radially from the center of the top portion 2112 to a peripheral portion of the top portion 2112. In this manner, the radius of the substrate can be monitored by a sensor, which can sense the diameter of the substrate during rotation. As described herein, the chamber 2100 is adapted to receive The upper substrate is oriented, wherein the deposition receiving side or face of the substrate faces the flat plate 2200, and the "back side" of the substrate faces the radiant heat source 21〇6. Sometimes, the "face up" orientation allows the energy from the radiant heat source 2106 to be more quickly absorbed by the substrate 214 when the back side of the substrate is less reflective than the substrate side. Although the plate 2200 and the radiant heat source 21A6 are described as being placed in the upper and lower portions of the inner volume 2120, respectively, the positions of the cooling zone 96 201142936 block 2 1 80 and the radiant heat source 2 1 06 are interchangeable. For example, the size of the cooling block 2180 can be designed and the cooling block 218 can be placed in the inner diameter of the substrate support 2104 and the radiant heat source 21 〇 6 can be coupled to the top 2112. In this configuration, the quartz window 2114 is disposed between the radiant heat source 2106 and the substrate support 2104, for example, adjacent the radiant heat source 1 〇 6 in the upper portion of the chamber 21 。. While the substrate 2140 can readily absorb heat when the back side of the substrate faces the radiant heat source 2106, in either configuration, the substrate 2140 can be positioned in a face-up or face-down orientation. It should be understood that since the fluorine-containing gas will be introduced into the chamber 21, the material in the chamber component must be resistant to the attack of the fluorine-containing gas. For example, a chamber component exposed to a fluorine-containing gas may be coated by a material such as sapphire or aluminum to resist erosion. Other fluorine resistant materials can also be used. The chamber 2100 further includes a distal plasma source 2192 for delivering plasma into the chamber, and the plasma can be delivered to the chamber by dispensing nozzles 2194. The lance 2194 is typically an elongated conduit having one or more outlets for averaging the distribution of slurry product into the chamber 2100. A plurality of nozzles 2194 can be used for injecting at a plurality of radial locations in the chamber 2100. In one or more embodiments, the (equal) nozzle 2194 is movable 'such that the nozzle 2194 is selectively movable in or out of space between the substrate 2140 and the plate 22A. . The modified chamber further includes an oxidizing gas supply to provide an oxidizing gas, such as oxygen, nitrous oxide, nitric oxide, and combinations thereof, the oxidizing gas supply and an auxiliary gas inlet into the chamber 18〇〇 1892 is in fluid communication as shown in Figure 18. 97 201142936 The oxidizing gas supply 2196 is in communication with the auxiliary gas inlet in the inlet chamber. The etching gas supply 2198 can apply a gas of a surcharge to the chamber 2100 by a reducing gas inlet. The etching gas, for example, four gasified carbon (CF4), trifluoromethane (CHF3), sulfur hexafluoride (Sf6), ammonia Gas, nitrogen trifluoride (NF3), helium (He), argon (Ar), and the like. Other gas supplies include an inert gas supply and an inlet (not shown) for delivering inert gases (e.g., helium, argon), reducing gases (e.g., hydrogen and other gases). The flow of each gas can be adjusted by a mass and volume flow controller that is coupled to the system controller 4. The gas supplies 2196 and 2198 are shown in fluid communication and pass through the chamber 21 side. In the meantime, it is contemplated that the gas supplies 2196 and 2198 can direct gas into the conduit that is in fluid communication with the showerhead, nozzle or other component for evenly distributing the gas into the chamber 21A. An example of the gas introduction system 2202 will be described below. Gas supplies 2196, 2198 and other gas supplies may be in fluid communication with gas introduction system 22A2. A Figure 22 shows a more detailed reflector 2200. Referring to Fig. 22, a reflective plate 2200 is shown which is combined with a gas distribution outlet for distributing gas evenly over the substrate while allowing rapid and controlled soil heating and cooling. The plate 22A & includes a top portion 2201 having a gas introduction system. The gas introduction system 22A includes a first gas introduction port 204 and an optional second gas introduction port 22〇6, the first gas introduction port 2204 In fluid communication with the optional second gas introduction weir and the gas mixing chamber 2 for thinking about the two emulsions. If only a single gas introduction port is provided, the mixing chamber 2208 can be removed from the design by deleting 98 201142936. It should be understood that additional gas introduction enthalpy may also be provided. Of course, the gas introduction ports 2202, 2204 can be connected to a suitable gas source, such as a gas tank or gas supply system (not shown). The mixing chamber 22A8 is connected to the 'air flow passage 2212, which is connected to the gas groove "Μ" and the gas introduction opening 2U6 formed in the barrier plate 2213. The barrier plate 2213 can be fixed to the top portion 22〇1 The separating component, or the obstruction plate 2213, is integrally formed with the top portion. Of course, other designs may be employed, including providing two or more sets of individual openings 2216 for two or more gases such that the gas is passed after exiting the showerhead. The plate includes a face 2203 through which the opening 2216 is formed. In operation, cyclic oxidation and/or nitridation and etching can be performed in the chamber 2100. An exemplary process includes: applying an etched electrical Slurry to chamber 2100, the etch plasma is formed in remote plasma source 2192. The etched electrical product can be applied through the illustrated nozzle 2194, or the electrical enthalpy product can be applied via introduction 埠2202. As described above, at least During the partial engraving process, it is desirable to maintain the substrate and the material surface at a relatively low temperature. For example, a partial etching process can be performed at a low temperature. The surface of the material is maintained at a relatively low temperature, for example, in the range of from about 20 ° C to about 60, less than about 5 Å, specifically less than about 45 Å, less than about 4 〇 C, less than about 35 ° C. In a particular embodiment, the temperature is maintained at about 3 Torr + / about 5 during the etch of the chamber 18 to help smear the etchant and help control the selectivity of the etch reaction. The substrate and the material are maintained at a low temperature by flowing a suitable cooling gas (for example, helium gas) through the plate 2200. The film layer or oxide is removed by etching the layer 99 201142936 layer further includes: Magnetically coupled to one or both of the lift pins 2144 and/or the stator assembly 2218 of the substrate support 2104 to move the substrate to be processed 'to bring the substrate closer to the plate 2200. For sublimation of the film formed during etching Or layer, by moving the substrate away from the plate 22 by the lift pin or stator assembly 2118, the radiant heat source 2 106 is activated to heat the substrate and material surface being etched to above about 1 〇〇c. In a particular embodiment Heating the substrate 2 to 4 〇 to at least 14 〇 C, at least about 150 C, at least about 160 ° C, at least about 170. 〇, at least about 180 ° C, or at least about 4 (TC, to ensure that the surface of the material is sufficient to sublimate the oxidized stone eve (Si 〇 2) The temperature. Therefore, a non-limiting, exemplary process in the chamber 2 1 包含 includes the application of ammonia (Nh3) or nitrogen trifluoride (NFS), or anhydrous hydrogen fluoride (HF). The gas mixture is supplied to the remote plasma source 2192, and the sulphur gas will condense on the cerium oxide at a low temperature (for example, about 3 〇〇c) and the reaction can form at moderate temperatures (for example, greater than! 〇(rc ) is a compound that is substantially sublimed in chamber 2 100 to etch ruthenium dioxide. The sublimation completely etches the surface of the material and removes by-products by atmosphere control system 2164 and/or flowing purge gas. It is desirable to control the temperature of the wall of the chamber between the substrate support and the gas distribution plate to prevent the surname and δ 彳 product from condensing on the wall of the chamber 2 1 。. An oxide layer is then formed on the surface of the material of the substrate. The tip thermal oxidation process is used to quickly form the oxide layer by rapidly activating the radiant heat source 2106. In an embodiment in which an oxide layer is formed in chamber 2100, oxidizing gas supply 21 96 directs oxidizing gas through the inlet into the chamber. Suitable oxidizing gases comprise one or more of oxygen, ozone, water, hydrogen peroxide, 100 201142936 or nitrogen oxide species 'eg, nitrous oxide (N 2 〇), oxidized 1 (N 〇) or nitrogen dioxide ( Ν〇 2). Nitrogen oxide species are introduced into the chamber at a suitable low pressure. The chamber is then heated to a suitable temperature such that the oxide layer grows on the surface of the material. In one or more embodiments, the chamber temperature is heated to a range of from about 200 °C to about 800 °C. In a particular embodiment, the chamber temperature is heated to about 3 Torr (rc to about 4 Torr (in the range of TC. As described above with 3A through 3C, 5A through 5E, 7A through 7D, 8A through 8B, 10A through 10D) The description of the 11A to UC diagram is intended to promote an oxidation reaction on the material that will be processed to form a layer of material. Alternatively, by a remote plasma source 2192 (or a separate remote plasma source) An oxidation step is achieved, the remote plasma source 2192 (or a separate remote plasma source) can supply an oxidizing gas for forming an oxygen plasma, and then the oxygen plasma is delivered to the chamber + ° in another In an example, the surface of the material on the substrate can be photochemically oxidized using an ultraviolet light source. Suitable oxidizing gas is included in the oxygen, ozone, water, hydrogen peroxide, or oxynitride species 'for example, oxidized two Nitrogen (n2〇), oxidizing gas (n〇) or oxidizing gas (NO^) 〇 after oxidizing the surface of the material layer to form an oxide layer, in the secondary purification chamber 2100 to remove the oxidizing gas and the (etc.) a by-product of the oxidation reaction. By flowing helium gas into the chamber and / Use atmosphere into the control system 70 to the purification step 2164 may be re-circulating in the chamber. The steps of complex oxide layer, d (by plasma and sublimation) are formed until the oxide layer is formed to have a material thickness. Exemplary components and process procedures are related to the contents of the above 3A JL 3 C s S Δ to 5Ε, 7Α to 7D, 8Α to 8Β, 10Α to 10D, 11Α 101 201142936 to He, and may be in the single cavity described above. Perform any process in the room. Therefore, summarizing the above, an oxide layer can be formed on the surface of the material in the chamber 21 by introducing one or more oxidizing gases into the chamber and heating the surface of the material, or by forming The oxidizing plasma in the remote plasma source is introduced and the oxidized plasma is delivered to the substrate on the support. An exemplary and suitable pressure in chamber 2100 is between about imT rrrr to about 10 Tori• range. The system controller can control the process to perform a complete oxidation and/or nitridation and etching process in the chamber and can be completed in less than about 3 minutes. In a particular embodiment, the complete process of oxidation and/or nitridation and etching steps can be completed in the chamber in less than about 2 minutes, and in more particular embodiments, can be less than about i minutes, For example, 45 seconds or 30 seconds, the complete process of oxidation and/or nitridation and buttoning steps is completed in the chamber. Used to form an oxide layer and etch (by plasma and sublimation, the device contains a furnace - the furnace contains a remote or regional source of electricity for generating "plasma with (4)", and the oxide layer and (4) The formation can be repeated by % until the oxide layer is formed to have a desired material thickness. Therefore, the chamber 2100 described with respect to Fig. 21 can be replaced by a suitably configured furnace that cyclically heats and cools the surface of the substrate material until The oxide layer is formed to have a desired material thickness. Exemplary elements are described above in terms of ..., ..., 7AJL7D, 8A to 2 to ', and any process can be performed in the single 201142936 chamber 1800 described above. Accordingly, a first aspect of the present invention is applicable to an apparatus for processing a substrate. A first embodiment of this aspect of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a process chamber having a substrate support Provided therein for supporting the substrate; a temperature control system for controlling the temperature of the substrate disposed on the substrate support to a first temperature lower than about 10 〇 ° C; a gas source, the gas source and The chamber is in fluid communication to deliver at least an oxygen-containing gas, an inert gas, and an etching gas into the process chamber; the source of the plasma is in fluid communication with the process chamber for exciting at least one of the oxygen-containing gas and the etching gas, And forming at least one oxidizing plasma or etching plasma; and a heat source for heating the substrate to a second temperature greater than the first temperature. In a variation of the first embodiment, when the substrate temperature is at the first temperature And when one of the oxidizing gases is delivered, the chamber is configured to deliver one of the etching gas and the etching plasma into the process chamber. In another variation, the second temperature is about 200. (: to l〇〇〇 In yet another variation, the chamber is configured to perform an etching process on a material layer of the substrate, and at least a portion of the etching process is performed at the first temperature. Another in the first embodiment In a variant, the etching process comprises a dry etching process, and the etching gas comprises an inflammatory gas. The first real 2 = contains a source of gas connected to the source of the electrical destruction, the gas source is further advanced Containing nitrogen. In a variation of the first embodiment, the residual gas is in fluid communication with the source to form an etch plasma. The temperature control system comprises cold in another variation of the first embodiment 103 201142936糸, used to perform at least a portion of the residual H private at temperatures below about 5 rc. More specifically, the cooling system is configured to reduce the substrate temperature to a range of approximately hunger In a particular variation of the first embodiment, the device is configured to cycle for less than about 3 minutes at the first temperature and the second degree. In another particular variation of the first embodiment, the device is Arranged to shape a layer of material on the substrate, the layer of material having a desired shape having a first width near a bottom surface of the desired shape, the first width being substantially equal to a second width 'the second width being close to the The top of the shape is desired, wherein the first and second widths of the desired shape are between about 1 and about 30 nm. Configure the device to form a layer of material that contains #movement poles. The device is configured to cycle (4) the process and the oxidation process on the material layer. In the - or more variations of the first embodiment, the oxidation process comprises rapid thermal oxidation, radiation oxidation, electrical oxidation, chemical oxidation or photochemical oxidation and the engraving process comprises at least the following: wet or dry chemistry Button engraving, reactive ion etching or plasma etching. The second aspect of the present invention is applicable to a method of shaping a material layer on a substrate. The method comprises: (4) processing a surface of the material layer in the processing chamber to form an oxide-containing layer or a nitride-containing layer; (b) Terminating the formation of the oxide-containing layer or the nitride-containing layer' (c) removing at least some of the oxide-containing layer or the nitride-containing layer by the etching process in the same process chamber as (4); Repeat (4) to (4) in the chamber until the material layer forms a shape. In a variant of the method, (4) 104 201142936 is performed at the -start rate and (a) contains the oxidation charge. a mad, when the S oxidation rate is lower than about 90% of the initial rate, termination (b). In the X 0 , , • _ another-k example of the method, by wet or dry rapid thermal oxygen

Chemistry, Xing, Oxidation, Electric Difficulty g A «To oxidize, wet or dry chemical oxidation or actinic acid · At least one of the oxidations to control the oxidation of the bamboo material layer to form a bismuth layer. In another variation of the method, the button engraving process comprises at least one of wet or dry dry d reactive ion or plasma etching. In another variation of the method, the layer of material is formed into a desired shape of a desired shape having a first width adjacent to the bottom surface of the desired shape, the first width being substantially: Width, the second width being near the top of the desired shape. In another variation of the 兮, 上 method, the desired shape has an aspect ratio of about 20 nm to about 20 nm. More specifically, the first and second widths of the desired shape are between about 1 and about 30 nm. More specifically, the height of the desired shape is between about 至 and about 3 〇. The shai material layer contains floating gates. In a second embodiment of an apparatus for performing a cyclic oxidation and engraving process on a layer of material, the apparatus includes: a process chamber having a plurality of walls, the process area in the wall-bound custom process chamber, The process chamber includes a substrate support 'for fixing a substrate having a material layer' in the process area; an oxygen-containing gas supply, an inert gas supply, and an etching gas supply in fluid communication with the process chamber The oxygen-containing gas, the inert gas and the etching gas are sent to the processing chamber; the plasma source' is used to form a plasma in the plasma generating region on the inner side of the chamber, and the gas is excited in the gas. At least one of which is used to form at least one of oxygen electropolymerization and surnamed plasma to contact the material layer; a heating system for heating the substrate in the chamber to a temperature greater than about the temperature; a system for cooling the substrate in the chamber to below the first temperature; two temperatures; and a control system for circulating the substrate in the chamber between the first temperature and the second temperature. In a variation of the second embodiment, the control system, the heating system and the cooling system are cycled between a first temperature and a second temperature for a cycle time of less than about 3 minutes. In another variation of the second embodiment, the cooling system includes a substrate support that includes a passageway for allowing a cooling medium to flow through the passage. In another variation of the second embodiment, the cooling system includes a showerhead disposed in the chamber adjacent the substrate support. The showerhead is in flow communication with the coolant. In another variation of the second embodiment, the heating system includes at least one of a light source and a resistive heater. In a variant, a resistive heater is placed in the substrate support. Alternatively, place the resistance heater in the sprinkler. In another variation of the second embodiment, the heating system includes disposing the light source such that energy emitted by the light source contacts the surface of the material at an angle of incidence, and by optimizing the incident angle of the material being processed absorb. In a particular configuration, the incident angle is a Brewster angle for the material to be processed. In a particular configuration of the second embodiment, the process chamber has a source of ceiling plasma, the source of the ceiling plasma comprising a power applicator comprising a coil disposed above the ceiling, the coil being transmitted through the impedance matching mesh 106 201142936 The circuit is coupled to a power source for generating plasma in the plasma generating region. In another variation, the (iv) gas contains a fluorine-containing gas and the wire chamber further includes a source of nitrogen coupled to the source of the plasma. The apparatus for performing a cyclic oxidation and etch process on a material layer. In an embodiment, the apparatus comprises: a process chamber, a chamber body, the cavity to the body comprising a plurality of walls. The wall boundary custom process chamber The process area of the process chamber includes a substrate support member for fixing the material layer: the substrate in the process area; a cover assembly disposed on the upper surface of the chamber body, the cover assembly including the first electrode And a second electrode, defining a plasma recess between the side electrode and the electric electrode, i heating the second electrode and disposing the second electrode to heat the substrate; containing oxygen gas: benefit, inert gas supply, and money engraving a gas supply, the process chamber, is in fluid communication with at least one of the cover members for delivering an oxygen-containing gas, a gas, and an etching gas to one of the process chamber and the lid assembly; the heating system a first temperature for heating the substrate in the chamber to a maximum temperature; a cooling system for cooling the substrate in the chamber to a second temperature lower than the first temperature; and a control system , In the chamber between the first circulating substrate temperature and the second temperature. In a variation of the third embodiment, the oxidizing gas is in fluid communication with the lid assembly to form an oxidative electrical system to treat the layer of material. In a further variation of the third embodiment, the etching gas is in fluid communication with the lid assembly to form a layer of electrically destroyed material. In a particular variation, (iv) the gas contains a surface. In a particular embodiment, the residual gas comprises ammonia gas and/or a plurality of nitrogen trifluoride (10) 3) gases and anhydrous hydrogenated water 107 201142936 (HF). The substrate support is adapted to be in the cavity

In a configuration of the third embodiment, the chamber body is vertically moved for use in a heated position in which the crucible is adjacent to the second electrode, the foot position being above the wire function of the first electrode, the shaft member being coupled Connected to the lifting mechanism. In an example, the lifting mechanism is adapted to vertically move the receiving surface in the chamber body for positioning the substrate in a heating position proximate to the second electrode during the oxidation process, and positioning the substrate away during the etching process The etching position of the second electrode. In another variation of the second embodiment, the substrate subassembly includes one or more gas passages 'the gas passage is in fluid communication with the receiving surface at one end of the gas passage, and second in the gas passage The end is in fluid communication with a source of purge gas or a source of vacuum. In another variation, the receiving surface includes one or more recessed channels formed in an upper surface of the receiving surface. In another variation of the third embodiment, the shaft member includes one or more intrusive gas conduits. The gas conduit is adapted to deliver one or more streams to the gas passage. In one example, the one or more intrusion conduits are adapted to deliver a heating medium to the one or more flow channels. The one or more intrusion conduits are adapted to deliver coolant to the one or more flow channels. In a particular variation of the third embodiment, the control system, the heating system 108, and the cooling system are configured to cycle between the first temperature and the second temperature for a period of less than 3 minutes. In a further variation of the third embodiment, the cooling system includes a showerhead disposed in the chamber adjacent the substrate support. The showerhead is in flow communication with the coolant. In still another variation of the third embodiment, the heating system includes at least one of a light source and a resistance heater. In embodiments including resistive heating H, the resistive heater can be disposed in the substrate support and/or in the showerhead. The heating system of the third embodiment can include a light source that is disposed such that light energy emitted by the light source can be brought into contact with the surface of the substrate at an angle of incidence that can be optimized by the material being processed. For the material being processed, the angle of incidence in the particular variation is the Brewster angle. Another embodiment of an apparatus for performing a cyclic oxidation and etching process on a layer of material includes a plurality of walls having a plurality of walls that define a process region in the process chamber, the process chamber including a substrate branch And the substrate is disposed in the process area, the substrate has a material layer, a 3 oxygen disorder supply, an inert gas supply, and an etching gas supply, and is connected to the process card and the core to the fluid communication To transport oxygen-containing gas, inert gas and money engraved gas to the disk - ± cavity to medium, a forced-end plasma source, and the process chamber and etching 翕驷, the ώ 老 old 2 J hole body is used to Forming a residual electric charge away from the chamber, and transferring the etching plasma into the chamber by the conduit; a heating system for heating the cavity-to-medium substrate to a first level higher than about 100 °c Temperature; a cooling system 15 for cooling the substrate in the chamber to a second degree below the first temperature, and a control system for placing the substrate in the 109 201142936 chamber at the first temperature Circulating between the second temperatures, will The device is configured to be essentially

In a variation of the fourth embodiment, it is only by the heating example. In the first hot spot between the reflectors, between. In a variation of the fourth embodiment, the source of the distal plasma is in fluid communication with the button gas containing the fluorine-containing gas. In another variation of the fourth embodiment, the chamber includes an elongated nozzle for transporting the etched plasma product into the chamber. The chamber includes a plurality of elongated nozzles radially disposed about the chamber for transporting the etched plasma product into the chamber. In another variation of the fourth embodiment, the cooling system includes a reflective plate that is combined with a gas distribution outlet for evenly distributing gas over the substrate while allowing rapid and controlled substrate heating and cooling. In still another variation of the fourth embodiment, the apparatus includes a lift pin for selectively contacting and supporting the substrate while moving the substrate toward the reflector and moving away from the reflector. In another variation of the fourth embodiment, the apparatus includes a stator assembly coupled to the substrate support for moving the substrate being processed toward the plate and moving away from the plate. The stator assembly can be magnetically coupled to the substrate support. In a particular configuration of the fourth embodiment, at least one of the stator assembly and the lift pin 110 201142936 cooperates with a cooling system for moving the substrate support adjacent the reflector to cool the substrate. In another particular configuration of the fourth embodiment, the control system is configured to circulate the cooling system for a period of time between the first temperature and the second temperature for less than about 3 minutes. In yet another variation, the apparatus is configured to perform an oxidation process by photochemical oxidation. Thus, a semiconductor element suitable for narrow pitch applications and a method of manufacturing the same are described herein. The apparatus described herein can be used to fabricate semiconductor components having a floating gate configuration suitable for narrow pitch applications, such as at component nodes of 32 nm or less. The component nodes of the examples are less than or equal to about 3 〇 nm, less than or equal to about 25 nm, less than or equal to about 20 nm, less than or equal to about 15 nm, less than or equal to about 13 nm. The semiconductor component includes, for example, NAnd and NOR flash memory components. The floating gate arrangement provided herein advantageously provides several semiconductor components having maintained or improved sidewall capacitance between the floating gate and the control gate, and adjacent floating gates in the component Reduced interference or noise between the poles. Furthermore, the apparatus for performing the methods disclosed herein can advantageously form semiconductor components while limiting undesired processes 'eg, oxygen diffusion, for example, 'helium gas diffusion will increase the tunneling oxide layer of the inventive elements. Thickness This method can be advantageously applied to the fabrication of other components or structures, such as FmFET components or hard mask structures, to overcome the critical size limitations imposed by conventional lithographic patterning. While the foregoing is a description of the embodiments of the present invention, other and further embodiments may be made without departing from the basic scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS A more particular description of the invention, and a further summary of the invention may be understood by reference to the embodiments illustrated in the accompanying drawings. However, it is to be understood that the drawings illustrate only typical embodiments of the invention and are not to be construed as limiting the scope of the invention. Figure 1 illustrates a semiconductor structure having floating gates fabricated using methods and apparatus of some embodiments of the present invention. Figure 2 is a flow chart illustrating a method of forming a floating gate in accordance with some embodiments of the present invention. Figures 3A through 3C are diagrams showing the manufacturing phase of the slamming gate according to some embodiments of the method of Figure 2. Figure 4 is a flow chart illustrating a method of forming a floating idler in accordance with some embodiments of the present invention. Figures 5A5 through 5E are diagrams showing the manufacturing stages of a floating idler in accordance with some embodiments of the method of Figure 4. Fig. 6 is a flow chart showing the formation of a floating gate in accordance with an embodiment of the present invention. The 7A$7T^ι 7D diagram is a stage of manufacture of the floating gate according to some embodiments of the method of FIG. Figures 8A through 8B are diagrams showing the fabrication phase of a floating gate in accordance with some embodiments of the method of Figure 6. Figure 9 is a schematic illustration of oxide thickness versus time in accordance with some embodiments of the present invention. Figures 10A through 10D are diagrams illustrating the fabrication stages of a floating gate in accordance with some embodiments of the present invention. 11A through 11C are diagrams illustrating the fabrication stages of a structure in accordance with some embodiments of the present invention. Figure 12 is an illustration of an exemplary process chamber in accordance with some embodiments of the present invention. Figure 13A is a diagram illustrating a first exemplary improved plasma processing chamber in accordance with some embodiments of the present invention. Figure 13B is an illustration of an exemplary embodiment of a substrate support cooling system that can be used in a chamber in accordance with several embodiments. Figure 14 is a diagram illustrating a second exemplary improved plasma processing chamber in accordance with some embodiments of the present invention. Figure 15 is a diagram illustrating a third exemplary improved plasma processing chamber in accordance with some embodiments of the present invention. Figure 16 is a diagram illustrating a light source system for heating a surface of a material in accordance with a chamber of one or more embodiments. The light source system of Fig. 6 is illustrated in more detail in accordance with - or a plurality of embodiments, which can be used to heat the surface of a material. Figure 18 illustrates an improved 113 201142936 chamber 'for use in performing the production of 裱 裱 oxidation and etching, in accordance with an embodiment of the present invention. Figure 19 illustrates the top of the chamber of Figure 18. Figure 20 illustrates the bottom of the chamber of the flank ~ + _ of Figure 18. Figure 21 is a diagram illustrating an improved rapid thermal processing chamber in accordance with one or more embodiments. Figure 22 illustrates the use of a gas distribution plate in the chamber of the first step 1153. These drawings have been simplified by way of example to illustrate the figures. The purpose of the figure is clearly expressed for the purpose of the symbol, and the same common elements are used as much as possible. It should be understood that the same [main element symbol description] in one embodiment 1 memory element 103 unit 105 unit 107 unit 1 〇 9 first width m second width 113 trunk 115 bottom surface 202 step elements can be advantageously incorporated In other embodiments. 102 substrate 104 oxide layer 106 floating gate 108 shallow trench isolation region (STI region) 110 inner polysilicon dielectric layer 112 control gate layer 114 wall 200 method 204 step 114 201142936 206 step 300 memory component 302 shallow trench Slot Insulation Area (STI Area) 304 Material Layer 306 Oxide Layer 400 Method 402 Step 404 Step 406 Step 408 Step 502 Nitride Layer 504 Nitride Layer 506 Oxide Layer 600 Method 602 Step 604 Step 606 Step 608 Step 610 Step 612 Step 700 Memory element 702 Material layer 704 First oxide layer 706 Second oxide layer 1000 Isotherm 1002 First period 1004 First oxide layer thickness 1006 Second period 1008 Second oxide layer thickness 1010 Isotherm 1100 Memory element 1102 material layer 1103 top surface 1104 shallow trench isolation region (STI region) 1105 top surface 1106 oxide layer 1108 IPD layer 1110 conductive layer 1200 patterned structure 1202 material layer 1203 upper surface 1204 substrate 115 201142936 1206 mask layer 1208 layer 1210 non-layer 1212 sidewall 1214 oxide layer 1216 raised portion 1300 Process Chamber 1302 Substrate Support 1303 Substrate 1304 Gas Source 1306 Plasma Source 1308 Heat Source 1310 System Controller 1400 Plasma Reactor 1410 Process Chamber 1412 Cylindrical Side Wall 1414 Ceiling 1416 Coil Antenna 1418 Impedance Matching Network 1420 RF Power Generator 1422 Gate 1424 Substrate Support Base 1426 Substrate 1428 Gas Injection System 1430 Vacuum Pump 1432 Oxidation Gas Reservoir 1434 Heater 1434A Internal Heating Member 1434B External Heating Member 1436 Pulse Generator 1438 Throttle 1440 Ion Generation Region 1442 Reducing gas reservoir 1444 Flow control valve 1446 Flow control valve 1448 Etching gas reservoir 1449 Flow control valve 1450 Sprinkler 1451 Opening 1452 Coolant supply 1454 Feedback control system 1455 Feedback control loop processor 116 201142936 1456 Valve 1457 Temperature sensor 1458 temperature detector 1459 temperature detector 1460 temperature detector 1461 memory 1462 heat exchanger 1463 evaporator inlet 1464 evaporator outlet 1465 reservoir 1466 compressor 1467 condenser 1468 expansion valve 1469 Through Valve 1470 Bypass Valve 1472 Reverse Loop Control Loop Processor 1474 User Interface 1476 Main Processor 1478 RF Bias Generator 1480 RF Bias Impedance Matching Element 1482 Gate 1486 Gas Channel 1488 Pressurized Helium Supply 1490 Clamp Voltage source 1500 Rapid heat treatment equipment 1502 Plasma applicator 1503 Body 1504 Energy source 1505 Pipe fitting 1506 Process chamber 1508 Side wall 1510 Bottom wall 1512 Window assembly 1514 Light pipe assembly 1516 Tungsten filament lamp 1518 Light pipe 1520 Substrate 1522 Support ring 1524 Quartz Cylinder 1526 reflector 1528 fiber probe 1530 gas inlet 117 201142936 1532 light pipe 1540 pipe fitting 1542 inlet piece 1544 gas inlet 1546 gas source 1548a waveguide 1548b waveguide 1550 three-way valve 1551 control valve 1552 gas source 1554 flow controller 1555 control signal Generate Logic 1556 System Controller 1557 Memory 1559 Processor 1562 Free Radical Outlet 1564 Plasma Free Radical 1566 Energy Source Inlet 1568 Magnetron 1570 Virtual Load 1572 Auto Tuner 1600 Reactor 1602 Cylindrical True Chamber 1604 cylindrical sidewall 1608 support pedestal 1610 semiconductor wafer 1612 gas distribution plate / shower head 1614 gas manifold 1616 gas distribution panel 1618 individual gas supply 1620 vacuum pump 1622 extraction annular space 1624 process area 1626 concave angle conduit 1628 Concave angle conduit 1630 End 1632 DC insulation ring 1634 Ring magnetic ring 1636 Excitation coil 1638 RF source power generator 1640 Impedance matching element 1642 RF bias generator 118 201142936 1644 Impedance matching circuit 1646 Intrusion electrode 1648 Insulation board 1720 Substrate 1722 Stage 1724 System Controller 1726 Short-wavelength laser 1728 Beam 1730 First optics 1732 Reflector 1734 Excitation beam 1740 Long-wavelength laser 1742 Beam 1744 Second optics 1746 Second reflector 1748 Heating beam 1750 Light source 1752 Actuator 1800 Process Chamber 1801 Chamber Body 1802 Channel 1803 Open σ 1804 Vacuum Pump 1805 Flow Valve 1806 Extraction Channel 1807 Vacuum 埠 1808 Pad 1809 Hole 1810 Process 1811 Slit Valve Opening 1820 Support Assembly 1821 Edge Ring 1822 Support 1823 Top Plate 1824 Through Hole 1825 Vacuum Pipe 1826 Shaft 1827 Groove 1828 Ring Lift Ring 1829 Drill 1830 Lift Pin 1831 Lifting Mechanism 119 201142936 1832 Dry Etching 1833 Purified gas channel 1834 Purified gas line 1835 Flow channel 1836 Heat transfer line 1840 Cap assembly 1841 First electrode 1842 Gas inlet 1843 Upper part 1844 Power source 1846 Expansion section 1847 Upper part 1848 Lower part 1849 Plasma recess 1850 Internal diameter 1851 Insulator ring 1852 Second electrode 1853 Top plate 1854 Recessed part 1855 0-ring 1856 Hole 1857 0-ring seal 1858 Distribution plate 1859 Ring mounting flange 1860 Heating member 1861 Hole 1862 Obstruction plate 1863 Hole 1864 Cover edge 1865 Channel 1890. Oxidizing gas supply 1892 Gas inlet 1894 Reducing gas supply 1896 Reducing gas inlet 2100 Process chamber 2102 Chamber body 2104 Substrate branch 2106 Radiant heat source 2108 Wall 2110 Bottom 2112 Top 2114 Quartz window 120 201142936 2116 Sensor 2117 Temperature detector 2118 Stator assembly 2120 Internal volume 2122 Actuating assembly 2124 System controller 2126 Memory 2128 Support circuit 2130 Central processing unit 2132 Guide Screw 2134 Flange 2136 Coupling 2138 Motor 2140 Substrate 2144 Lifting pin 2148 Substrate access 2158 Nut 2160 Honeycomb tube 2164 Atmosphere control system 2168 Drive coil assembly 2170 Suspension coil assembly 2180 Cooling block 2181A Inlet 2181B Outlet 2182 Coolant ' Source 2183 Second Coolant Source 2184 Coolant Channel 2186 Flow Source 2190 Housing 2192 Remote Plasma Source 2194 Distribution Nozzle 2196 Oxidation Gas Supply 2198 Etching Gas Supply 2200 Reflector 2201 Top Section 2202 Gas Introduction System 2203 Face 2204 First gas introduction port 2206 second gas introduction port 2208 gas mixing chamber 2212 air flow channel 2213 obstruction plate 121 201142936 2214 gas groove 2216 opening 122

Claims (1)

201142936 VII. Patent application scope: 1. A device for performing a cyclic oxidation and etching process on a material layer, the device comprising: a process chamber, a chamber body, the chamber body having a plurality of walls. Forming a plurality of walls defining a process area in the process chamber, the process chamber including a substrate support for securing a substrate having a material layer in the process area; a cover assembly 'the cover assembly An upper surface of the chamber body, the cover assembly includes a first electrode and a second electrode defining a plasma recess between the first electrode and the second electrode, wherein the second electrode is heated and a second electrode adapted to heat the substrate; an oxygen-containing gas supply, an inert gas supply, and an etch gas supply $ in fluid communication with at least one of the process chamber and the lid assembly to deliver (IV) an oxygen-containing gas And the inert gas and the (four) gas enter one of the process chamber and the cover assembly; the heating system 'heats the substrate in the chamber to a temperature higher than about 100 ° C a first temperature; a cooling system 'heart cooling the chamber of the chamber towel to a second temperature below the first temperature; and a control system' for using the substrate in the chamber at the first temperature Circulates with the second temperature. 2. The apparatus of claim 1, wherein the oxidizing gas 123 201142936 is in fluid communication with the lid assembly to "form" the material layer. X 3. As claimed in claim 1 The apparatus, wherein the etching gas is in fluid communication with the lid assembly for forming a plasma to treat the material layer. 4. The apparatus of claim 3, wherein the gas of the surname contains a gas 5. The apparatus of claim 4, wherein the etching gas comprises a gas and one or more ammonia trifluoride gas and anhydrous hydrogen fluoride (HF). The device of item 5, wherein the substrate support is adapted to move vertically in the chamber body for positioning the substrate in a heated position proximate the second electrode during an oxidation process, and Positioning the substrate in a squeezing position away from the second electrode during the etching process, wherein the substrate support comprises a receiving surface, wherein the substrate support comprises a receiving surface, The plate support is adapted to support the substrate on the receiving surface, wherein the receiving surface is disposed on a shaft member coupled to a lifting mechanism. 124 201142936 8. As described in claim 7 Apparatus [wherein the lifting mechanism is adapted to vertically move the receiving surface in the chamber body for positioning the substrate in a heated position proximate the second electrode during an oxidation process" and during an etching process The substrate is positioned in an etched position away from the second electrode. 9. The device of claim 8 wherein the substrate support package 3 or the evening gas channel is in the one or more gas channels One end of the apparatus is in fluid communication with the receiving surface and is in fluid communication with a source of a purge gas or a vacuum source at a second end of the one or more gas passages. The receiving surface includes three or more recessed channels formed on an upper surface of the receiving surface. η. The device of claim 8, wherein The shaft member comprises - or a plurality of char-in gas conduits adapted to deliver one or more streams to the gas passage. 12. The first intrusive gas conduit is adapted to the flow passage as claimed in the patent application. The apparatus of item 11, wherein the one or more of a heating medium is transferred to the one or more 125 201142936 1 3 . The first intrusive conduit is applicable to the apparatus described in the lane 0 11 as claimed in the patent application. Wherein the one or more coolants are delivered to the one or more liquid streams. 14. The apparatus of claim 1, wherein the heating system is configured with the cooling system at less than The cycle between the first temperature and the second temperature is cycled for a period of about 3 minutes. The apparatus of claim 2, wherein the cooling system 3 is sprayed in the chamber and is adjacent to the substrate support member. The shower head and the coolant Flow communication. 16. The apparatus of claim 15, wherein the heating system comprises at least one of a light source and a resistance heater. 17. The apparatus of claim 15 wherein the resistance heater is disposed in the substrate support. 18·If you apply for a patent scope. Wherein the resistance heater is disposed in the nozzle. The apparatus of claim 1, wherein the heating system is configured to cause the light source emitted by the light source to contact the surface of the material at an incident angle, the incident being The angle is optimized for the absorption of the material 126 201142936. 20. The apparatus of claim 19, wherein the angle of incidence is a Brewster angle of the layer of material being processed. 127