KR101730147B1 - Apparatus and method for treating a substrate - Google Patents

Apparatus and method for treating a substrate Download PDF

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Publication number
KR101730147B1
KR101730147B1 KR1020150104478A KR20150104478A KR101730147B1 KR 101730147 B1 KR101730147 B1 KR 101730147B1 KR 1020150104478 A KR1020150104478 A KR 1020150104478A KR 20150104478 A KR20150104478 A KR 20150104478A KR 101730147 B1 KR101730147 B1 KR 101730147B1
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KR
South Korea
Prior art keywords
annealing
gas
substrate
annealing gas
processing space
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KR1020150104478A
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Korean (ko)
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KR20170012757A (en
Inventor
우재원
김만진
김현표
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피에스케이 주식회사
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Priority to KR1020150104478A priority Critical patent/KR101730147B1/en
Priority to JP2016133107A priority patent/JP6602271B2/en
Publication of KR20170012757A publication Critical patent/KR20170012757A/en
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Publication of KR101730147B1 publication Critical patent/KR101730147B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The present invention relates to an apparatus for treating a substrate and a method of treating the substrate. According to an embodiment of the present invention, the substrate processing apparatus includes a housing having a processing space therein, a support unit positioned in the processing space and supporting and rotating the substrate, a plasma generation unit generating plasma, And a substrate processing apparatus including a processing gas supply unit for supplying a gas and an annealing gas supply unit for supplying an annealing gas to the processing space.

Description

[0001] DESCRIPTION [0002] APPARATUS AND METHOD FOR TREATING A SUBSTRATE [0003]

The present invention relates to an apparatus for treating a substrate and a method of treating the substrate.

Plasma is an ionized gas state composed of ions, electrons, radicals and the like. Plasma is generated by a very high temperature, a strong electric field, or RF electromagnetic fields.

Such a plasma is variously utilized in a lithography process using a photoresist to fabricate a semiconductor device. For example, an ashing process is performed to form various fine circuit patterns such as a line or a space pattern on a substrate or to remove a photoresist film used as a mask in an ion implantation process. Utilization in the process is increasing.

On the other hand, an annealing process is performed by performing a substrate processing process using plasma on a substrate and then removing reaction by-products generated during the process. Generally, the annealing process is performed in a separate chamber from the process of processing the substrate.

However, when the annealing process is performed in a separate chamber, the process may be performed by moving the substrate to the annealing chamber that performs the annealing process on the substrate after the process process in the process chamber for processing the substrate, and the process time for processing the substrate may be prolonged . Further, a separate annealing chamber is required, which increases the facility of the substrate processing apparatus.

The present invention is to provide a substrate processing apparatus and a substrate processing method capable of performing an annealing process on a substrate.

The present invention also provides a substrate processing apparatus and a substrate processing method which are performed in a substrate processing apparatus using a plasma processing process and an annealing process.

The present invention also provides a substrate processing apparatus and a substrate processing method capable of performing an annealing process by supplying a heated annealing gas to a substrate.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and the problems not mentioned can be clearly understood by those skilled in the art from the description and the accompanying drawings will be.

The present invention provides a substrate processing apparatus.

According to an embodiment of the present invention, the substrate processing apparatus includes a housing having a processing space therein, a support unit positioned in the processing space and supporting and rotating the substrate, a plasma generation unit generating plasma, A process gas supply unit for supplying a gas, and an annealing gas supply unit for supplying an annealing gas to the process space.

According to an embodiment, the annealing gas supply unit may include an inlet pipe inserted into the side wall of the housing and supplied with an annealing gas from the outside, and an outlet pipe connected to the outlet pipe to supply the annealing gas supplied from the inlet pipe to the process space. . ≪ / RTI >

According to an embodiment of the present invention, the annealing gas supply unit may further include a connection pipe connecting the inflow pipe and the outflow pipe and having a flow path formed therein.

According to one embodiment, the transverse width of the outlet may be provided greater than the diameter of the inlet tube.

According to one embodiment, the outlet may be provided at a higher position than the inlet tube.

According to one embodiment, the outlet tube may be located in the processing space.

According to one embodiment, the outlet pipe may be provided in parallel with the upper surface of the support unit, projecting into the process space from the side wall of the housing.

According to one embodiment, the outlet tube may be inserted into the side wall of the housing.

According to an embodiment of the present invention, the annealing gas supply unit includes an inlet pipe inserted into the upper wall of the housing and supplied with an annealing gas from the outside, and an outlet pipe provided with an outlet for supplying the annealing gas supplied from the inlet pipe to the process space. And a connection pipe connecting the inflow pipe and the outflow pipe and having a flow path formed therein.

According to one embodiment, the plurality of annealing gas supply units are provided, and the plurality of annealing gas supply units may be combined and arranged in a circular shape.

According to an embodiment, the annealing gas supply unit has a ring shape and is provided inside the side wall of the housing and provides a diffusion space between the side wall of the housing and the supply hole for supplying the annealing gas to the processing space. And an inlet pipe inserted into a side wall of the housing and supplied with the annealing gas from the outside to supply the annealing gas to the diffusion space.

According to an embodiment, a plurality of supply holes are provided, and the supply holes may be arranged in a ring shape on a circumferential surface of the body.

According to an embodiment, the supply hole may be disposed in parallel with the upper surface of the support unit.

According to one embodiment, the feed hole may be located above the inlet tube.

According to one embodiment, the body may be the liner.

According to one embodiment, the gas supply unit may further include a heating member for heating the annealing gas supplied to the processing space.

According to one embodiment, the supporting unit may further comprise a heater for heating the substrate placed on the supporting unit.

According to one embodiment, the gas supply unit may include a gas storage portion in which the annealing gas is stored, a gas supply line that supplies the annealing gas to the gas supply line to the gas storage portion, And a controller for controlling the valve and the heating member, wherein the controller controls the amount of the annealing gas supplied to the processing space and the temperature of the annealing gas to a predetermined value And to control the valve and the heating member to supply the temperature.

According to one embodiment, the annealing gas may be provided as an inert gas.

According to one embodiment, the annealing gas may be provided as steam.

According to an embodiment, the controller may control the heating member such that the temperature of the annealing gas supplied to the processing space is 50 to 500 degrees Celsius.

The present invention provides a method of treating a substrate.

According to one embodiment of the present invention, the substrate processing method includes providing a substrate in a processing space, performing plasma processing on the substrate by supplying plasma in the processing space, and performing an annealing process on the substrate in the processing space Wherein the annealing process may be performed by an annealing gas heated into the process space.

According to one embodiment, the plasma process may be a dry cleaning process.

According to one embodiment, the plasma process may be an etch-back process.

According to one embodiment, the plasma process step and the annealing step of forming a (NH x F) y SiF z combination to the oxide film formed on the substrate by supplying a gas containing nitrogen, hydrogen and fluorine in the process space May be a process for removing the (NH x F) y SiF z bond.

According to one embodiment, the plasma process is a process of removing the photoresist on the substrate, and the annealing process may be a process of removing the residue on the substrate.

According to one embodiment, the temperature of the heated annealing gas may be between 50 and 500 degrees Celsius.

According to one embodiment, the annealing gas may be an inert gas.

According to one embodiment, the annealing gas may be water vapor.

According to one embodiment, the substrate may be rotated while the annealing gas is being supplied.

According to one embodiment, heating of the substrate during the annealing process may be performed only by the annealing gas.

According to one embodiment, the heating of the substrate during the annealing process may be heated by a heater provided in the support unit in which the annealing gas and the substrate are placed.

According to an embodiment of the present invention, the substrate processing process and the annealing process may be performed on a single substrate processing apparatus, thereby improving the efficiency of the substrate processing process.

In addition, according to an embodiment of the present invention, a processing process using plasma and an annealing process on a substrate can be performed by one substrate processing apparatus, thereby minimizing the substrate processing facility.

According to an embodiment of the present invention, the annealing process may be performed by supplying a heated annealing gas to the substrate, thereby improving the efficiency of the annealing process.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a view showing a part of the annealing gas supply unit of FIG. 2. FIG.
Fig. 4 is an exploded perspective view showing a part of the annealing gas supply unit of Fig. 2; Fig.
Figs. 5 to 7 are views showing another embodiment of the annealing gas supply unit of Fig. 2. Fig.
FIG. 8 is a view showing another embodiment of the annealing gas supply unit of FIG. 2. FIG.
9 is a perspective view showing the body of the annealing gas supply unit of FIG.
10 and 11 are views schematically showing the flow of the annealing gas supplied to the processing space.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 1 includes an equipment front end module (EFEM) 10 and a processing module 20. The facility front end module (EFEM) 10 and the process module 20 are sequentially arranged in one direction. Hereinafter, the direction in which the facility front end module (EFEM) 10 and the processing module 20 are disposed is referred to as a first direction 2, and a direction perpendicular to the first direction 2 as viewed from the top is referred to as a second direction And a direction perpendicular to both the first direction 2 and the second direction 3 is referred to as a third direction 4. [

The facility front end module 10 is located in front of the processing module 20. The facility front end module 10 transfers the substrate W between the carrier 16 on which the substrate is housed and the processing module 20. The facility front end module 10 includes a load port 12 and a frame 14. [

The load port 12 is located in front of the frame 14. [ A plurality of load ports 12 are provided. The plurality of load ports 12 are spaced apart from each other and are arranged in a line along the second direction 3. Alternatively, the number of load ports 12 may increase or decrease depending on conditions such as process efficiency and footprint of the process module 20. A carrier 16 (e.g., a cassette, Front Opening Unified Pod: FOUP, etc.) is seated in each load port 12. The carrier 16 contains a substrate W to be supplied to the process and a substrate W to which the process is completed. The carrier 16 is formed with a slot (not shown) provided to support the edge of the substrate. A plurality of slots are provided in the third direction (4), and the substrates are stacked and positioned within the carrier (16), spaced apart along the third direction (4).

The frame 14 is disposed between the load port 12 and the load lock chamber 22. The load port 12, the frame 14, and the load lock chamber 22 are sequentially arranged in the first direction 2. A transfer robot 18 for transferring the substrate W between the load port 12 and the load lock chamber 22 is disposed in the frame 14. [ The transfer robot 18 is movable along the transfer rail 19 provided in the second direction 3.

The process processing module 20 includes a load lock chamber 22, a transfer chamber 24, and a plurality of substrate processing apparatuses 30.

A load lock chamber (22) is disposed between the transfer chamber (24) and the frame (14). The transfer chamber 24, the load lock chamber, and the frame 14 are sequentially disposed along the first direction 2. The load lock chamber 22 provides a space for waiting before the substrate W to be supplied to the process is transferred to the substrate processing apparatus 30 or before the processed substrate W is transferred to the carrier 16 do. One or a plurality of load lock chambers 22 may be provided. According to one embodiment, two load lock chambers 22 are provided. The two load lock chambers 22 are arranged along the second direction 3 in sequence. One of the load lock chambers 22 houses a substrate W supplied to the substrate processing apparatus 30 for processing and the other one of the load lock chambers 22 receives the substrate W processed by the substrate processing apparatus 30 The substrate W can be housed.

The transfer chamber 24 is disposed rearwardly of the load lock chamber 22 along the first direction 2. The transfer chamber 24 has a polygonal body 25 as viewed from the top. On the outside of the body 25, load lock chambers 22 and a plurality of substrate processing apparatuses 30 are disposed along the periphery of the body 25. [ According to one embodiment, the transfer chamber 24 has a hexagonal body when viewed from the top. A load lock chamber 22 is disposed on each of the two sidewalls adjacent to the facility front end module 10, and the substrate processing apparatuses 30 are disposed on the remaining sidewalls. On the respective side walls of the body 25, passages (not shown) through which the substrate W enters and exits are formed. The passage provides a space for the substrate W to be transferred between the transfer chamber 24 and the load lock chamber 22 or between the transfer chamber 24 and the substrate processing apparatus 30. [ Each passage is provided with a door (not shown) for opening and closing the passage. The transfer chamber 24 may be provided in various shapes depending on the required process module.

A transfer robot (26) is disposed inside the transfer chamber (24). The transfer robot 26 transfers the unprocessed substrate W waiting in the load lock chamber 22 to the substrate processing apparatus 30 or transfers the substrate W processed in the substrate processing apparatus 30 to the load lock chamber 22, (22). The transfer robot 26 may sequentially provide the substrate W to the substrate processing apparatuses 30. [

The substrate processing apparatus 30 supplies a gas in a plasma state to a substrate to perform a process process. Plasma gases can be used in a wide variety of semiconductor manufacturing processes. Hereinafter, the substrate processing apparatus 30 is described as performing an ashing process, but the present invention is not limited thereto. The substrate process apparatus 30 may be applied to various processes using plasma gas such as an etching process and a deposition process.

2 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 2, the substrate processing apparatus 30 includes a processing unit 100, a plasma supplying unit 200, and an annealing gas supplying unit 300. The plasma processing unit 100 provides a space in which the processing of the substrate W is performed and the plasma supplying unit 200 generates plasma used in the processing of the substrate W, (W). The annealing gas supply unit 300 supplies an annealing gas to the substrate to perform an annealing process. Hereinafter, each configuration will be described in detail.

The processing unit 100 includes a housing 110, a support unit 140, and a shower head 150.

The housing 110 provides a processing space TS in which a substrate W process is performed. The housing 110 includes a chamber 120 and a sealing cover 130. The upper surface of the chamber 120 is opened and a space is formed therein. An opening (not shown) through which the substrate W enters and exits is formed in the side wall of the chamber 120, and the opening is opened and closed by an opening / closing member such as a slit door (not shown). The opening and closing member closes the opening during the processing of the substrate W in the housing 110 and opens the opening when the substrate W is carried into the housing 110 and out of the housing 110 do.

A heater (not shown) may be provided on the wall of the chamber 120. A heater (not shown) heats the walls of the chamber 120. A heater (not shown) may be provided in electrical connection with the heating power source. The processing space TS is maintained at a predetermined temperature inside the chamber 120 by the heat generated in the heater (not shown). The heater (not shown) may be provided as a coil-shaped hot wire.

An exhaust hole 121 is formed in the lower wall of the chamber 120. The exhaust hole 121 is connected to the exhaust line 170. The internal pressure of the housing 110 is adjusted through the exhaust line 170. By-products generated in the process through the exhaust line 170 are discharged to the outside of the housing 110.

The sealing cover 130 engages the top wall of the chamber 120. The sealing cover 130 covers the open upper surface of the chamber 120 to seal the inside of the chamber 120. The sealing cover 130 is provided with an area smaller than the cross-sectional area of the chamber 120. The upper end of the sealing cover 130 is connected to the plasma supplying part 200. The sealing cover (130) is formed with an induction space (DS). The plasma introduced from the plasma supplying unit 200 spreads in the guide space DS and moves to the shower head 150.

The support unit 140 is located in the processing space TS. The support unit 140 supports the substrate W. The supporting unit 140 may be provided with an electrostatic chuck for attracting the substrate W by electrostatic force. The support unit 140 may be provided with lift holes (not shown). Lift holes are provided with lift pins (not shown), respectively. The lift pins ascend and descend along the lift holes when the substrate W is loaded or unloaded onto the support unit 140.

The support unit 140 includes a body 141, a support shaft 143, and a rotation driver 145. The body 141 has an upper surface that is provided in a generally circular shape when viewed from above. A heater 147 may be provided inside the body 141. The heater 147 heats the substrate W to maintain the process temperature. The heater 147 can heat the substrate W during the annealing process. A support shaft 143 rotatable by a rotation driving unit 145 is coupled to a bottom surface of the body 141. A rotation driving part 145 is coupled to the lower part of the support shaft 143. The rotation driving unit 145 can rotate the body 141. For example, the rotary drive 145 may be provided as a motor.

The showerhead 150 engages the upper wall of the chamber 120 between the chamber 120 and the enclosure cover 130. The shower head 150 is provided in a disc shape. The shower head 150 is disposed in parallel with the upper surface of the support unit 140. The shower head 150 is provided with a flat surface facing the support unit 140. The showerhead 150 may be provided in a larger area than the substrate W. [ Holes 151 are formed in the shower head 150. The plasma gas diffused in the guide space DS passes through the holes 151 and is supplied to the substrate W.

The plasma supply unit 200 includes a plasma generation unit 210, a process gas supply unit 220, and a connection port 240.

The plasma generating unit 210 discharges the process gas to generate a plasma gas. The process gas supply unit 220 supplies the process gas to the discharge space ES of the plasma generation unit 210. Hereinafter, each configuration will be described in detail.

The plasma generating unit 210 is located at the top of the housing 110. The plasma generating unit 210 discharges the process gas to generate a plasma gas. The plasma generating unit 210 includes a reactor 211, a gas injection port 212, an induction coil 215, and a power source 217.

The reactor 211 is provided in a cylindrical shape. The upper and lower surfaces of the reactor 211 are opened. The reactor 211 has a space formed therein. The inside of the reactor 211 is provided with a discharge space ES where the process gas is discharged.

A gas injection port 212 is connected to the upper end of the reactor 211. The gas injection port 212 is connected to the process gas supply unit 220 and is supplied with a process gas. An induction space IS is formed in the bottom surface of the gas injection port 212. The guide space IS has an inverted funnel shape. The guide space IS communicates with the discharge space ES. The process gas introduced into the guide space IS diffuses and is supplied to the discharge space ES.

The induction coil 215 is wound around the reactor 211 a plurality of times along the periphery of the reactor 211. One end of the induction coil 215 is connected to the power source 217 and the other end is grounded. The power source 217 applies high frequency power or microwave power to the induction coil 215.

The process gas supply unit 220 supplies process gas to the guide space IS. The process gas may be provided in various forms, either as an oxide film formed on the substrate W or as a source gas for removing the photoresist film. The process gas may be provided as a mixed gas containing at least one of hydrogen (H 2 ), oxygen (O 2), nitrogen (N 2), ammonia (NH 3 ) and fluorine series gases. For example, the fluorine-based gas includes a mixed gas in which NF 3 or NF 3 is mixed. The fluorine-based gas may include at least one of HF, HCl, BCl 3 , HBr, and ClF 3 . Further, it includes a mixed gas in which at least one of the gas components is mixed.

The process gas supply unit 220 includes a process gas storage section 221 for storing a process gas, a gas supply line 222 for connecting the process gas storage section 221 and the gas injection port 212, And a valve 223 installed in the line 222 for regulating the supply flow rate of the process gas.

The connection port 240 is located between the plasma generating unit 210 and the housing 110. The connection port 240 has a cylindrical shape, and the upper surface and the lower surface are opened and a source space SS is formed therein. The connection port 240 is provided with a radius corresponding to the reactor 211. The upper end of the connection port 240 is coupled to the reactor 211, and the lower end is coupled to the seal cover 130.

Fig. 3 is a view showing a part of the annealing gas supply unit of Fig. 2, and Fig. 4 is an exploded perspective view showing a part of the annealing gas supply unit of Fig. 2 to 4, the annealing gas supply unit 300 performs an annealing process by supplying an annealing gas to a processing space TS in which the substrate W is located. The annealing step is a step of removing reaction by-products generated during the substrate W processing step.

The annealing gas supply unit 300 is inserted into the side wall of the housing 110 and is provided. A plurality of annealing gas supply units 300 may be provided. For example, the annealing gas supply unit 300 may be provided in four. The plurality of annealing gas supply units 300 are combined and placed in a circular ring shape. Alternatively, the annealing gas supply unit 300 may be provided in three or less or five or more. The plurality of annealing gas supply units 300 are disposed on the side wall of the housing 110, and may be arranged in a ring shape in combination with each other.

The annealing gas supply unit 300 includes an inlet pipe 310, an outlet pipe 320, a connection pipe 330, a heating member 340, a gas storage unit 350, a gas supply line 360, a valve 370, And a controller 390.

The inlet pipe 310 is inserted into the side wall of the housing 110. The inlet pipe 310 is supplied with an annealing gas from the outside. The inlet pipe 310 supplies the annealing gas supplied from the outside to the flow channel 331 formed in the connection pipe 330. The inlet pipe 310 may be inserted parallel to the side wall of the housing 110. Alternatively, as shown in FIG. 5, the inflow pipe 310 may be inserted into the upper wall of the housing 110. But may be inclined to the side wall of the housing 110 as shown in FIG. In this case, the inflow pipe 310 is provided to be inclined upward toward the inside of the housing 110.

The outflow pipe 320 supplies the annealing gas to the processing space TS. The outflow pipe 320 is located in the processing space TS. The outflow pipe 320 is provided protruding into the processing space TS. The outlet pipe 320 is provided in combination with the side wall of the housing 110. The outflow pipe 320 is located above the support unit 140 in the process space TS. The outflow pipe 320 is provided in parallel with the upper surface of the support unit 140. The outflow pipe 320 is located above the inflow pipe 310. The outlet pipe 320 has an outlet 321. The outlet port 321 is formed such that the width d2 of the transverse direction is longer than the longitudinal width d3. The width d2 of the side of the outlet 321 may be greater than the diameter d1 of the inlet tube 310. [ The outlet 321 is located above the inlet tube 310. On the contrary. The outlet pipe 320 may be inserted into the side wall of the housing 110 as shown in FIG. In this case, the inlet pipe 310, the outlet pipe 320, and the connecting pipe 330 are inserted and provided in the side wall of the housing 110.

The connection pipe 330 connects the inlet pipe 310 and the outlet pipe 320. The connector 330 is provided in combination with the side wall of the housing 110. One side of the connection pipe 330 is connected to the inflow pipe 310 and the other side is connected to the outflow pipe 320. The connection pipe 330 is connected to the outlet pipe 320 at an upper portion thereof. A flow path 331 is formed in the connection pipe 330. The flow path 331 supplies the annealing gas supplied from the inflow pipe 310 to the outflow pipe 320.

The heating member 340 heats the annealing gas supplied to the processing space TS. The heating member 340 is installed on the gas supply line 360. The heating member 340 heats the annealing gas to a predetermined temperature. For example, the heating member 340 may heat the annealing gas to 50 to 500 degrees Celsius. The heating member 340 can heat the annealing gas supplied to the inlet pipe 310. For example, the heating member 340 may be provided as a heater.

The gas storage part 350 stores the annealing gas and supplies the annealing gas to the processing space TS through the gas supply line 360. As an example, the annealing gas may be provided as an inert gas. As an example, the supplied annealing gas may be provided as nitrogen gas. Alternatively, the annealing gas may be provided with water vapor.

A gas supply line 360 is connected to the gas storage part 350. One end of the gas supply line 360 is connected to the inlet pipe 310 and the other end is connected to the gas storage unit 350. The gas supply line 360 is provided with a valve 370. The valve 370 regulates the amount of annealing gas supplied to the process space TS.

The controller 390 controls the heating member 340 and the valve 370. For example, the controller 390 controls the heating member 340 to heat the annealing gas such that the temperature of the annealing gas supplied to the processing space TS is 50 to 500 degrees Celsius. For example, the controller 390 controls the amount of the annealing gas supplied to the processing space TS by controlling the valve 370.

Fig. 8 is a view showing another embodiment of the annealing gas supply unit of Fig. 2, and Fig. 9 is a perspective view showing a body 330a of the annealing gas supply unit of Fig. 8 and 9, the annealing gas supply unit 300a includes a body 330a, an inlet pipe 310a, a heating member 340, a gas storage unit 350, a gas supply line 360, Valve 370 and controller 390. [

The heating member 340, the gas storage portion 350, the gas supply line 360, the valve 370, and the controller 390 are provided in the same manner as in Fig. 2 in the annealing gas supply unit 300a in Fig.

The body 330a is provided in a ring shape. The body 330a has a space in which the upper surface and the lower surface are opened. The body 330a may be provided in a cylindrical shape. The body 330a may have a radius corresponding to the inner surface of the chamber 120. The body 330a is located inside the housing 110. [ The body 330a is coupled to the side wall of the housing 110. [

A diffusion space 320a is formed between the outer surface of the body 330a and the inner wall of the housing 110. [ The diffusion space 320a is connected to the supply hole 321a and the inlet pipe 310a. The diffusion space 320a diffuses the annealing gas supplied from the inlet tube 310a and supplies the annealing gas to the processing space TS through the supply hole 321a of the body 330a. The diffusion space 320a forms a ring-shaped space.

The body 330a has a supply hole 321a. A plurality of supply holes 321a are provided. The supply hole 321a is provided in a circular shape. The plurality of supply holes 321a are arranged in a ring shape on the circumferential surface of the body 330a. The supply hole 321a is disposed in parallel with the upper surface of the support unit 140. [ The supply hole 321a is located at the top of the inlet pipe 310a. Unlike the above-described example, the supply hole 321a may be provided in a polygonal shape such as a triangle, a square, a pentagon, or the like.

For example, the body 330a may be provided as a liner. The liner prevents the inner wall of the chamber 120 from being damaged. The liner prevents impurities generated during the process from depositing on the inner walls of the chamber 120. The liner may be made of aluminum.

8, the inlet pipe 310a is provided substantially the same as the inlet pipe 310 of FIG.

10 and 11 are views schematically showing the flow of the annealing gas supplied to the processing space. 10 and 11, there is provided a method of processing a substrate W with a substrate W processing apparatus of the present invention.

The substrate W is transferred from the outside to the processing space TS. The transferred substrate W is placed in the supporting unit 140 in the processing space TS. After the substrate W is provided in the processing space TS, the processing gas is used to generate plasma. And the generated plasma is supplied to the processing space TS to process the substrate W. [ For example, the process using plasma may be a dry cleaning process. Alternatively, the plasma process may be an etch-back process. Alternatively, the plasma process may be a process in which the processing space (TS) to form a (NH x F) y SiF z combination to the oxide film formed on the substrate (W) by supplying nitrogen, hydrogen, a gas containing fluorine. Alternatively, the plasma process may be a process of removing the photoresist on the substrate W.

After a plasma process is performed on the substrate W, an annealing process is performed on the substrate W in the process space TS. The annealing process is a process of removing reaction by-products generated on the substrate W after the plasma process. The annealing process is performed by supplying a heated annealing gas onto the substrate W in the processing space TS. In one embodiment, the annealing gas may be provided as an inert gas. The supplied inert gas may be supplied as nitrogen gas or argon gas. Alternatively, the annealing gas may be provided with water vapor.

An example in the oxide film formed on the substrate (W) with a plasma process is supplied to a gas containing nitrogen, hydrogen and fluorine in the processing space (TS) (NH x F) if the step of forming the y SiF z combination annealing process And removing the (NH x F) y SiF z bond on the substrate W. [ Alternatively, in the case where the plasma process is a process of removing photoresist on the substrate W, the annealing process may be a process of removing the residue on the substrate W. [

The annealing gas supply unit 300 supplies annealing gas to the processing space TS. For example, the annealing gas supply unit 300 of FIG. The annealing gas is supplied from the gas storage part 350 to the inflow pipe 310 through the gas supply line 360. The annealing gas is heated to a predetermined temperature at the heating member 340 before being supplied to the inlet pipe 310. As an example, the temperature of the heated annealing gas may be between 50 and 500 degrees Celsius.

The annealing gas is supplied from the inlet pipe 310 to the outlet pipe 320 through the flow channel 331 of the connection pipe 330. The annealing gas supplies an annealing gas onto the substrate W of the support unit 140 through an outlet 321 formed in the outlet tube 320. The annealing gas is not directly supplied onto the substrate W of the supporting unit 140 but flows through the outflow pipe 320 positioned higher than the inflow pipe 310, the connection pipe 330 and the inflow pipe 310 . The support unit 140 rotates the substrate W while the annealing gas is supplied.

The substrate W is heated by the heated annealing gas, and an annealing process is performed. The heating of the substrate W can be performed only by the heated annealing gas. Alternatively, it may be provided by a heater and an annealing gas provided in the support unit 140. Alternatively, the substrate W may be heated by simultaneously using the heated annealing gas, the heater in the supporting unit 140, and the heater provided in the side wall of the chamber.

The annealing gas is not directly supplied to the substrate W through the inflow pipe 310 while the annealing gas is being supplied, and the slipping phenomenon of the substrate W by the annealing gas supplied can be suppressed. In addition, the outlet pipe 320 is provided with a wide width in the direction of the inlet so that the annealing gas can be uniformly supplied to the entire area of the substrate W. A plurality of annealing gas supply units 300 are provided and the annealing gas supplied to the processing space TS by rotating the substrate W by the support unit 140 is uniformly supplied to the entire region of the substrate W And the efficiency of the annealing process can be improved.

According to an embodiment of the present invention, the plasma process and the annealing process may be performed on the substrate W in the processing space TS of one substrate W processing apparatus. The annealing process by heating the substrate W can reduce the substrate W processing facility and shorten the process time of the substrate W compared with the case where the annealing process is performed in a separate chamber, Can be improved.

However, in case of performing the annealing process in one substrate processing apparatus, it is possible to install a heater in the showerhead, to raise the substrate on the support unit by using a lift pin, etc., and then to heat the substrate to perform the annealing process. In this case, there is an advantage of performing plasma processing and annealing on a substrate in one substrate processing apparatus. However, since the temperature of the shower head differs from the temperature of the plasma processing process and the temperature of the annealing process, There is a problem that needs to change. Therefore, when performing the plasma process and the annealing process in one substrate processing apparatus, it is necessary to repeatedly perform the temperature increase-cooling repeatedly in a short time while stably controlling the rapid temperature change. However, it is difficult to provide a showerhead with a material which can maintain a desired temperature by heating and cooling the showerhead in a short time, takes a long time to process, and can withstand rapid temperature changes. In addition, there is a problem that the substrate processing process takes a long time due to the movement of the substrate and the temperature increase-cooling process in the two processes.

In contrast, in the above-described embodiment of the present invention, the annealing process is performed with a separate heated annealing gas, so that the process temperature can be easily adjusted, and it is not necessary to provide a heating apparatus to another apparatus such as a shower head. Further, there is an effect that the plasma process using the process gas and the heated annealing gas are supplied to the substrate on the support unit, and the annealing process is performed to shorten the time for the substrate process.

In addition, the substrate W processing apparatus can minimize the facility of the substrate W processing apparatus by performing an annealing process with a heated annealing gas in place of the heating apparatus for annealing separately in the processing space TS.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

110: housing 140: support unit
150: Showerhead 210: Plasma generating unit
220: process gas supply unit 300: annealing gas supply unit
310: inlet pipe 320: outlet pipe
330: Connector 340: Heating element
350: gas storage part 360: gas supply line
370: Valve 390: Controller

Claims (32)

An apparatus for processing a substrate,
A housing having a processing space therein;
A support unit positioned in the processing space and supporting and rotating the substrate;
A plasma generating unit for generating plasma;
A processing gas supply unit for supplying a processing gas into the processing space; And
And an annealing gas supply unit for supplying an annealing gas to the processing space,
Wherein the annealing gas supply unit includes:
A body having a ring shape and located inside the side wall of the housing and providing a diffusion space between the side wall of the housing and a supply hole for supplying the annealing gas to the processing space; And
And an inlet pipe inserted into a side wall of the housing and supplied with the annealing gas from the outside to supply the annealing gas to the diffusion space. The method according to claim 1,
Wherein the annealing gas supply unit includes:
And an outflow pipe having an outlet for supplying the annealing gas supplied from the inlet pipe to the processing space. 3. The method of claim 2,
Wherein the annealing gas supply unit includes:
And a connection pipe connecting the inflow pipe and the outflow pipe and having a flow path formed therein. 3. The method of claim 2,
Wherein the width of the outlet is greater than the diameter of the inlet tube. 5. The method of claim 4,
Wherein the outlet is provided at a higher position than the inlet tube. 3. The method of claim 2,
And the outlet pipe is located in the processing space. 3. The method of claim 2,
Wherein the outlet pipe projects into the processing space from a side wall of the housing and is provided in parallel with an upper surface of the supporting unit. 3. The method of claim 2,
Wherein the outlet pipe is inserted into the side wall of the housing. delete 9. The method according to any one of claims 1 to 8,
Wherein the plurality of annealing gas supply units are provided and the plurality of annealing gas supply units are combined and arranged in a circular shape. delete The method according to claim 1,
Wherein a plurality of the supply holes are provided, and the supply holes are arranged in a ring shape on a circumferential surface of the body. 13. The method of claim 12,
And the supply hole is disposed in parallel with the upper surface of the support unit. 14. The method of claim 13,
Wherein the supply hole is located above the inflow pipe. 15. The method according to any one of claims 12 to 14,
Wherein the body is a liner. The method according to any one of claims 1 to 8, 12 to 14,
The gas supply unit includes:
And a heating member for heating the annealing gas supplied to the processing space. 17. The method of claim 16,
Wherein the supporting unit further comprises a heater for heating a substrate placed on the supporting unit. 17. The method of claim 16,
The gas supply unit includes:
A gas storage part for storing the annealing gas;
A gas supply line for supplying the annealing gas stored in the gas reservoir to the processing space;
A valve disposed in the gas supply line for regulating a flow rate of the annealing gas supplied to the processing space; And
Further comprising a controller for controlling said valve and said heating member,
Wherein the controller controls the valve and the heating member to supply the amount of the annealing gas supplied to the processing space and the temperature of the annealing gas to a predetermined temperature. 19. The method of claim 18,
Wherein the annealing gas is provided as an inert gas. 19. The method of claim 18,
Wherein the annealing gas is provided as water vapor. 19. The method of claim 18,
Wherein the controller controls the heating member such that the temperature of the annealing gas supplied to the processing space is 50 to 500 degrees Celsius.


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